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Wyświetlanie 1-47 z 47
Tytuł:
Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films
Autorzy:
Jamshidi, R.
Hosseini, S.
Ahmadizadeh, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1419912.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
Opis:
Dual-frequency plasma enhanced chemical vapor deposition was used to grow diamond-like carbon thin films from $CH_4,$ $H_2$ gas mixture. The effects of radio frequency, microwave power, and gas ratio were investigated. Various species have been identified in the $CH_4-H_2$ plasma using optical emission spectroscopy and their effects on film properties have been studied. Increasing the RF power to 400 W, the variation trend of refractive index and CH, $C_2$ intensity ratios change beyond the 300 W, but the growth rate shows the continuous increasing character from 6 to 11.6 nm/min. Increasing the hydrogen content in the system, the intensity ratio of CH, $C_2$, $CH^{+}$ and growth rate show decreasing tendency and the refractive index rises from 1.98 to 2.63. Adding MW produced plasma to the system grows the refractive index to 2.88 and growth rate to 10.8 nm/min. The water contact angle rises from 58.95° to 73.74° as the RF power increases to 300 W but begins to reduce until 400 W. In addition, the contact angle shows a growing tendency by increasing the hydrogen flow to the chamber. In addition, the structures of the films were investigated by the Raman spectroscopy.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 230-235
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MBE Growth of YbTe on GaAs(100) and BaF$\text{}_{2}$(111) Substrates
Autorzy:
Sadowski, J.
Dynowska, E.
Kowalczyk, L.
Powiązania:
https://bibliotekanauki.pl/articles/1934069.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
The structural properties of MBE grown YbTe layers were investigated by X-ray diffraction methods and photoluminescence measurements. YbTe films were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2° off oriented substrates and on the BaF$\text{}_{2}$(100) substrates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction picture. Results of the X-ray rocking curve and photoluminescence excitation measurements indicate that the structural properties of YbTe films are comparable to the properties of the MBE grown ZnTe and CdTe layers on the GaAs(100) substrates. The measured values of the YbTe lattice constant parallel and perpendicular to the growth plane show that the 1 μm thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 arc seconds) for the YbTe films crystallised on the 2 μm thick CdTe bucher layer grown on the GaAs(100) substrate. In the case of BaF$\text{}_{2}$(111) substrate the two-dimensional MBE growth mode of YbTe was not observed.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1028-1032
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
Autorzy:
Kim, M.
Jin, S.
Choi, H.
Kim, G.
Yim, K.
Kim, S.
Nam, G.
Yoon, H.
Kim, Y.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505152.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
81.15.Gh
Opis:
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 875-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE
Autorzy:
Sadowski, J.
Grodzicka, E.
Dynowska, E.
Adamczewska, J.
Domagała, J.
Przedpelski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968416.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF$\text{}_{2}$(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10$\text{}^{19}$ cm$\text{}^{-3}$ to 10$\text{}^{2 1}$ cm$\text{}^{-3}$ depending on the MBE process parameters.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 967-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Processes of ZnTe Epilayers Deposited by MBE on GaAs(100) Vicinal Surfaces - Studies by Static and Dynamic RHEED
Autorzy:
Sadowski, J.
Dziuba, Z.
Herman, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1932085.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
Static and dynamic reflection high energy electron diffraction (RHEED) has been applied for studying the initial growth processes of ZnTe crystallized by molecular beam epitaxy (MBE) on vicinal surfaces of GaAs(100) substrates. Atomically smooth ZnTe epilayers have been grown by MBE when in situ thermal desorption of the substrate protecting oxide layer was performed in the ultra high vacuum environment of the vacuum growth chamber just before the growth of ZnTe started. By gradual increasing of the substrate temperature of the crystallized ZnTe epilayers from 300°C to 420°C, when recording the RHEED intensity oscillations at these and eleven intermittent temperatures, it has been shown that the transition from the 2D-nucleation growth mechanism to the step-flow growth mechanism of ZnTe occurs at 410°C. Measuring periods of RHEED intensity oscillations recorded during the MBE growth processes it has been demonstrated that the growth rate of ZnTe at constant fluxes of the constituent elements decreases with increasing temperature from 0.37 ML/s at 300°C to 0.22 ML/s at 400°C.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 225-228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MOCVD of Perovskites with Metallic Conductivity
Autorzy:
Gorbenko, O. Yu.
Kaul, A. R.
Molodyk, A. A.
Novozhilov, M. A.
Bosak, A. A.
Babushkina, N. A.
Belova, L. M.
Krause, U.
Wahl, G.
Powiązania:
https://bibliotekanauki.pl/articles/1964529.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
Single source MOCVD techniques were used to prepare perovskite films with metallic conductivity (CaRuO$\text{}_{3}$, LaNiO$\text{}_{3}$, La$\text{}_{0.5}$Sr$\text{}_{0.5}$CoO$\text{}_{3}$ and (La,Pr)$\text{}_{0.7}$(Sr,Ca)$\text{}_{0.3}$MnO$\text{}_{3}$). Structural and electrical properties of the epitaxial layers on the coherent substrates are close to that of the films grown by pulsed laser deposition and magnetron sputtering. Peculiarities of the growth occur on the worse matched substrates, such as a mixture of two orientations, each aligned in the plane of the interface (LaNiO$\text{}_{3}$/MgO) and variant structures in the films on yttrium stabilized zirconia. X-ray diffraction of the films indicates pseudocubic lattice for all R$\text{}_{1-x}$A$\text{}_{x}$MO$\text{}_{3}$ films in spite of the distortions in the bulk material. The dependence of metal-insulator transition in R$\text{}_{1-x}$A$\text{}_{x}$MnO$\text{}_{3}$ on the nature of R and A and film-substrate lattice mismatch was studied.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 237-242
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MBE Growth and Properties of ZnYbTe Layers
Autorzy:
Sadowski, J.
Szamota-Sadowska, K.
Świątek, K.
Kowalczyk, L.
Abounadi, A.
Rajira, A.
Powiązania:
https://bibliotekanauki.pl/articles/1952684.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
61.14.Hg
Opis:
The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb$\text{}^{3+}$ ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MBE layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transitions connected with YbTe were observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1060-1064
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers
Autorzy:
Prażmowska, J.
Korbutowicz, R.
Wośko, M.
Paszkiewicz, R.
Kovač, J.
Srnanek, R.
Tłaczała, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807541.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
81.15.Gh
81.15.Kk
Opis:
Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on $Al_{2}O_{3}$. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-123-S-125
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation of carbon nanomaterials over Ni/ZSM-5 catalyst using simplex method algorithm
Autorzy:
Majewska, J.
Michalkiewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1075535.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.De
81.16.Hc
81.15.Gh
Opis:
Carbon nanomaterials were prepared from methane by catalytic decomposition over a nickel-supported ZSM-5 catalyst. The mole ratio of SiO₂ to Al₂O₃ in ZSM-5 was 200-400. The nickel content was varied from 17 to 23 wt% Ni. In order to find the greatest yield and the highest quality of carbon nanomaterials the simplex design method for planning the experiments was applied. Different parameters such as: temperature, methane flow, nitrogen flow and nickel content in the catalyst were evaluated. The carbon nanomaterials were analyzed by the Raman spectroscopy, scanning and transmission electron microscopy, and total organic carbon analyzer.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 153-157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Limiting Growth of GaN at Low Temperatures
Autorzy:
Ozgit, C.
Donmez, I.
Biyikli, N.
Powiązania:
https://bibliotekanauki.pl/articles/1492654.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.15.Gh
82.80.Pv
Opis:
GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia $(NH_3)$ as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-055-A-057
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Homoepitaxial Growth of YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ on Single Crystal YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ Substrates
Autorzy:
Morishita, T.
Zama, H.
Shiohara, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1964238.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
74.72.-h
81.15.Gh
Opis:
a- and c-axis oriented YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ (YBCO) films were epitaxially grown on (100) and (001) YBCO single-crystal substrates, respectively, by metalorganic chemical vapor deposition under the same preparation conditions including substrate temperature. As a Ba precursor Ba(DPM)$\text{}_{2}$-2tetraen was adopted. This precursor increased a deposition rate for YBCO films to 50 nm/h at 140°C. The substrates were formed from a 14.5x14.5x13 mm YBCO single crystal grown by a modified top-seeded crystal pulling method. Only a few surface atomic layers remained damaged after polishing and cleaning, which however did not affect the epitaxy of film growth. The crystallinity of the interface between an epilayer and substrate was much improved compared to that on usual perovskite substrates.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 97-103
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of Thin Films of the Organic Superconductor α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$
Autorzy:
Moldenhauer, J.
Wachtel, H.
Schweitzer, D.
Gompf, B.
Eisenmenger, W.
Bele, P.
Brunner, H.
Keller, H. J.
Powiązania:
https://bibliotekanauki.pl/articles/1933377.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Kn
73.50.-h
81.15.Gh
Opis:
α-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$ is a quasi-two-dimensional organic metal with a metal-insulator phase transition at 135 K. Thermal treatment at about 80°C leads to the metallic system α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$, which becomes superconducting below 8 K. Thin films of the α-phase (thickness between 500 and 3000 Å) have been evaporated in high vacuum onto several substrates and characterized by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and low field microwave absorption. Depending on the temperature of the substrate and the evaporation rate, the films exhibit different degrees of microcrystallinity, which under certain conditions can be strongly reduced and a completely covering film can be obtained. X-ray diffraction spectra reveal a high orientation with the c-axis perpendicular to the substrate and as well the successful conversion into the α$\text{}_{t}$-phase by tempering. Scanning electron microscopy and atomic force microscopy investigations prove that the conversion takes place without reducing the mechanical quality of the films. Low-field microwave-absorption experiments show that the α$\text{}_{t}$-films become superconducting with an onset at 9 K.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 823-827
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and optical properties of boron nitride grown by MOVPE
Autorzy:
Dąbrowska, A.
Pakuła, K.
Bożek, R.
Rousset, J.
Ziółkowska, D.
Gołasa, K.
Korona, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1160531.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.30.Fs
78.20.-e
Opis:
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Polarized Carrier Injection in MOCVD-Grown YBCO/STO/LSMO Heterostructures with Underlying YBCO Layer
Autorzy:
Vengalis, B.
Plaušinaitiene, V.
Abrutis, A.
Šaltytė, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2041755.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.50.+r
81.15.Gh
85.25.-j
Opis:
The oxide heterostructures composed of superconducting YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ bottom layer, the overlying ferromagnetic La$\text{}_{1-x}$Sr$\text{}_{x}$MnO$\text{}_{3}$ film and SrTiO$\text{}_{3}$ as ultrathin (d≈5 nm) barrier were grown heteroepitaxially onto LaAlO $\text{}_{3}$ substrates by applying pulsed liquid injection metalorganic chemical vapour deposition technique. We report anomalous interface resistance increase with cooling just below superconductive transition temperature (T$\text{}_{c}$≅85 K) and enhanced suppression of supercurrent of strip-like YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ film due to spin-polarized carriers injected from the ferromagnetic manganite layer.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 286-289
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Dependent Conductivity of Ultrathin ZnO Films
Autorzy:
Snigurenko, D.
Kopalko, K.
Krajewski, T.
Łuka, G.
Gierałtowska, S.
Witkowski, B.
Godlewski, M.
Dybko, K.
Paszkowicz, W.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1403646.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
78.66.Hf
81.15.Gh
Opis:
Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1042-1044
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cathodoluminescence Profiling for Checking Uniformity of ZnO and ZnCoO Thin Films
Autorzy:
Witkowski, B. S.
Łukasiewicz, M. I.
Wolska, E. A.
Kopalko, K.
Kowalski, B. J.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048105.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.30.Fs
78.60.Hk
Opis:
We employ scanning electron microscopy and cathodoluminescence for evaluation of uniformity of ZnCoO films obtained by the atomic layer deposition. Cathodoluminescence quenching by Co ions allows us to detect (regions of weaker light emission) Co accumulations, with the resolution limited by diffusion length of secondary carriers.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 675-677
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ellipsometric Evaluation of the Optical Constants of Zirconium Oxynitride Thin Films Deposited by Reactive Pulsed Magnetron Sputtering
Autorzy:
Tomsah, I.
Powiązania:
https://bibliotekanauki.pl/articles/1400496.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
61.05.C-
78.66.-w
Opis:
Three different zirconium oxynitride films were deposited onto glass and Si (100) substrates at room temperature by pulsed reactive dc magnetron sputtering of a metallic Zr target in an $Ar//O_2//N_2$ atmosphere. The structural, compositional and optical properties of the deposited films were found to depend on the ratio of nitrogen partial pressure to the total reactive gas partial pressure. Energy-dispersive X-ray spectroscopy measurements revealed that as the nitrogen amount increased in the reactive gas the nitrogen content was found to increase in the film. The film structure was determined by X-ray diffraction. The X-ray diffraction patterns of the analyzed samples revealed a strong dependence of the $ZrO_xN_{y}$ film structure on composition. A two layer model, the Bruggeman effective medium approximation and both Drude absorption edge and Lorentz oscillators were used to describe the surface roughness layer and the main $ZnO_xN_{y}$ layer, respectively, was used to describe the experimental ellipsometric data. The optical band gap was decreased from 3.56 to 3.45 eV with changing nitrogen content, while refractive index at 650 nm simultaneously was increased from 1.98 to 2.11.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 141-145
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
Autorzy:
Alevli, M.
Ozgit, C.
Donmez, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492662.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.66.Fd
78.55.Et
Opis:
In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia $(NH_3)$ plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100C.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-058-A-060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy
Autorzy:
Szczerbakow, A.
Godlewski, M.
Dynowska, E.
Ivanov, V. Yu.
Świątek, K.
Goldys, E. M.
Phillips, M. R.
Powiązania:
https://bibliotekanauki.pl/articles/1992336.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.60.-p
81.15.Gh
Opis:
In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 579-582
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Substrate on Size of Pd Nanoparticles in C-Pd Composites Obtained in the PVD and CVD Processes
Autorzy:
Sobczak, K.
Kozłowski, M.
Czerwosz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1032958.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
81.07.Bc
81.15.Gh
82.45.Mp
Opis:
This paper presents the results of research of C-Pd composite films obtained by the physical vapor deposition and chemical vapor deposition method. These films will be applied as hydrogen sensors. It has been examined whether the substrate has an impact on morphology and topologies of the C-Pd composite and whether the thermal conductivity of the substrate has an impact on the average size of the Pd nanoparticles. Substrates such as Al₂O₃, SiO₂, Si, and Mo were used, and in the physical vapor deposition process fullerene (C₆₀) and palladium acetate were deposited. Some of the samples were examined microscopically, while another part was modified in the chemical vapor deposition process in the presence of xylene. It was found that the average size of the Pd nanoparticles prepared in the physical vapor deposition process is independent of the substrate for all of the substrates used in the present experiment. During the chemical vapor deposition process an increase of the size of the Pd nanoparticles was observed - as expected. What is more, we noticed a weak relation between the size of the Pd nanoparticles and the type of substrate on which the C-Pd composite was deposited.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1413-1416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Metalorganic Vapour Phase Epitaxy Growth of A^{III}B^{V} Heterostructures Observed by Reflection Anisotropy Spectroscopy
Autorzy:
Zíková, M.
Hospodková, A.
Pangrác, J.
Vyskočil, J.
Hulicius, E.
Oswald, J.
Komninou, P.
Kioseoglou, J.
Powiązania:
https://bibliotekanauki.pl/articles/1398563.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.07.Ta
78.67.Hc
78.55.Cr
Opis:
Reflectance anisotropy spectroscopy is a useful technique used for in situ observation of the metalorganic vapour phase epitaxy growth, because it does not require vacuum in the reaction chamber. With this method we are able to observe the quantum dot growth, the incorporation of indium or antimony atoms in the layer or the monolayer growth of GaAs. We can also estimate the amount of InAs needed for the quantum dot formation, the time necessary for the quantum dot growth or reveal the unintended growth of InAs quantum dots from large dissolved InAs objects.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-75-A-78
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio
Autorzy:
Golunski, L.
Sobaszek, M.
Gardas, M.
Gnyba, M.
Bogdanowicz, R.
Ficek, M.
Plotka, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402345.pdf
Data publikacji:
2015-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.ug
82.80.Gk
68.55.A-
Opis:
The influence of various nanodiamond colloids used for seeding nondiamond substrates in microwave plasma enhanced chemical vapour deposition diamond process was investigated. Colloids based on deionized water, isopropanol alcohol and dimethyl sulfoxide (DMSO) were used with different grain size dispersion: 150, 400 and 35 nm, respectively. The influence of growth time was also taken into consideration and bias enhanced nucleation. Microcrystalline diamond films were deposited on the seeded substrates in microwave plasma chemical vapour deposition using hydrogen-methane gas mixture. Seeding efficiency was investigated by means of scanning electron microscopy and Raman spectroscopy. Authors defined the new factor called as diamond ideality factor (di) which can give a quick estimation of quality of film and relative sp³ content. Few main peaks were identified at the following wave numbers: diamond sp³ peak 1332 $cm^{-1}$, D band peak 1355 $cm^{-1}$, C-H bending peak 1440-1480 $cm^{-1}$ and G band peak 1560 $cm^{-1}$. The best di was achieved for DMSO based colloid in all cases. The application of bias enhanced nucleation increases the diamond crystals size and the sp³/sp² ratio.
Źródło:
Acta Physica Polonica A; 2015, 128, 1; 136-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microscopic Luminescence Properties of ZnO and ZnO Based Heterostructures
Autorzy:
Bertram, F.
Christen, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046894.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Hk
78.66.Hf
81.05.Dz
81.15.Gh
Opis:
The optical properties of excitonic recombinations in ZnO are investigated by spatially and spectrally resolved cathodoluminescence measurements. The relevance of cathodoluminescence microscopy as a spatially resolved luminescence technique as a simple but very powerful characterization method is stressed out in discussions of a wide variety of appropriate examples. A thorough discussion of the various features of the cathodoluminescence of an undoped ZnO bulk crystal, epitaxially grown ZnO and MgZnO/ZnO/MgZnO quantum well structure is given. Particular attention is devoted to the impact of the internal electrical fields, e.g. the Franz-Keldysh effect in ZnO. Furthermore, this study focuses on the spectral variations as a function of depth to the interface in ZnO homo- and heterostructures. Our aim is to establish the nature of the optical transitions influenced by internal fields, defects and impurity doping in ZnO/GaN and ZnO/ZnO interfaces. This review covers also the vertical transport, diffusion and capture of carriers in a MgZnO/ZnO/MgZnO quantum well structure.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 103-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Studies of C-Ni-Pd Nanocomposite Films Deposited on Al₂O₃ Substrate
Autorzy:
Kozłowski, M.
Czerwosz, E.
Sobczak, K.
Kurowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1032987.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
81.07.Bc
81.15.Gh
82.45.Mp
Opis:
The properties of nanocomposite carbon-nickel-palladium (C-Ni-Pd) films deposited on Al₂O₃ substrate have been investigated and the results are presented in this work. C-Ni-Pd films were obtained by a 3 step process consisting of PVD/CVD/PVD methods. The structure and morphology of the obtained films were characterized by scanning electron microscopy and transmission electron microscopy techniques at various stages of film formation. Energy dispersive X-ray spectrometer was used for measuring the elements segregation in the obtained film. Transmission electron microscopy and scanning transmission electron microscopy observations have shown carbon nanotubes decorated with palladium nanoparticles in the final film. The average size of the palladium nanoparticles did not exceed 10 nm.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1409-1412
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron Photoemission Study of Ferromagnetic (Zn,Co)O Films
Autorzy:
Guziewicz, E.
Lukasiewicz, M.
Wachnicki, L.
Kopalko, K.
Dłużewski, P.
Jakiela, R.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492604.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.At
75.50.Pp
81.05.Dz
81.15.Gh
Opis:
The electronic structure of ferromagnetic (Zn,Co)O films was investigated by resonant photoemission across the Co 3p → Co 3d photoionization threshold, e.g. using photon energy between 50 eV and 66 eV. The films were grown by atomic layer deposition at temperature between 160C and 300C and they differed in distribution and content of cobalt. The maximum of the Fano resonance was observed at photon energy 63 eV, whereas the minimum at 58 eV. The difference between energy distribution curves taken at 63 eV and the one taken at 58 eV was calculated for a series of samples. It shows that the Co 3d contribution to the valence band electronic structure of ferromagnetic (Zn,Co)O films differs significantly from that of the films which show the paramagnetic response.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-040-A-042
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Blue Optoelectronics in III-V Nitrides on Silicon
Autorzy:
Krost, A.
Dadgar, A.
Powiązania:
https://bibliotekanauki.pl/articles/2035573.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Eq
62.20.Mk
81.15.Gh
81.40.Np
Opis:
Three simple and promising methods to grow high-quality, device-relevant gallium nitride heterostructures on silicon are presented: strain-compensation, patterning, and the insertion of low-temperature AlN interlayers. With all methods device-quality GaN can be grown. While patterning is especially interesting for light emitters, low-temperature AlN interlayers can be used universally not only for transistor structures, which require good insulation of the active layers to the Si substrate, but also for vertically contacted LEDs when doped with Si. Low-temperature AlN interlayers do not only reduce tensile stress but also improve GaN properties and strongly reduce the threading dislocation density from 10$\text{}^{10}$ cm$\text{}^{-2}$ to 10$\text{}^{9}$ cm$\text{}^{-2}$ for 2 low-temperature AlN layers. Additionally, the layer quality can be enhanced by using in situ Si$\text{}_{x}$N$\text{}_{y}$ masks. Best crack-free layers with dislocation densities around 10$\text{}^{9}$ cm$\text{}^{-2}$ show X-ray rocking-curve widths around 400 arcsec and narrow photoluminescence. So far, best LEDs on Si(111) have an optical output power of 0.42 mW at 20 mA and 498 nm which is enough for simple signal applications.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 555-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
Autorzy:
Gierałtowska, S.
Sztenkiel, D.
Guziewicz, E.
Godlewski, M.
Łuka, G.
Witkowski, B. S.
Wachnicki, Ł.
Łusakowska, E.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048118.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
77.55.-g
77.84.Bw
81.05.Ea
Opis:
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 692-695
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
Autorzy:
Taube, A.
Kruszka, R.
Borysiewicz, M.
Gierałtowska, S.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492515.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.dj
77.22.Ch
73.40.Qv
81.15.Gh
81.15.Cd
Opis:
The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Rays Response of Diamond Detectors Constructed Using Diamond Layers Produced by Low Power Microwave Chemical Vapor Deposition Reactor
Autorzy:
Kordyasz, A.
Bednarek, A.
Kowalczyk, M.
Tarasiuk, J.
Kulczycka, E.
Teodorczyk, M.
Gajewski, M.
Kordyasz, Ł.
Rowiński, O.
Lamparski, K.
Karwański, Ł.
Lipczewski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1402641.pdf
Data publikacji:
2015-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.75.-d
81.15.Gh
29.40.Vj
07.85.Fv
Opis:
The low power reactor for microwave chemical vapor deposition process is described. The rotating Mo holder of 12 mm diameter and 6 mm height with the diamond substrate was heated by 2.45 GHz microwaves to temperature about 800°C in the range of (1.5-7)% $CH_{4}//H_{2}$ mixture to create plasma at pressure 70 Tr. Stabilization of the holder temperature was performed by optical observation of radiation from the holder followed by adjusting of the magnetron power. Diamond detectors are produced using microwave chemical vapor deposition process grown on single crystal diamond high pressure high temperature Sumimoto substrates, [100] oriented. The response of diamond detectors for X-rays has been measured in the current mode using medical X-rays tube. The linear response of the diamond detector current versus X-ray tube current (dose) is presented.
Źródło:
Acta Physica Polonica A; 2015, 127, 5; 1555-1559
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of ZnO Nanowires Doped with Magnesium
Autorzy:
Zhuang, H.
Wang, J.
Liu, H.
Li, J.
Xu, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505046.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.Km
61.72.uj
81.15.Gh
78.67.-n
Opis:
ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850°C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 819-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology and Optical Properties of Laser-Assisted Chemical Vapour Deposited GaN
Autorzy:
Goldys, E. M.
Godlewski, M.
Tansley, T. L.
Powiązania:
https://bibliotekanauki.pl/articles/1969082.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
81.15.Gh
61.16.Ch
78.30.-j
Opis:
Properties of GaN epilayers grown by laser-assisted chemical vapour deposition are discussed. Good crystallinity and surface morphology of the films is demonstrated. Micro-Raman spectra are explained by scattering by small, randomly oriented cubic phase units present in the GaN film.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 331-335
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Do We Understand Magnetic Properties of ZnMnO?
Autorzy:
Godlewski, M.
Wójcik, A.
Kopalko, K.
Ivanov, V. Yu.
Wilamowski, Z.
Jakieła, R.
Guziewicz, E.
Szczepanik, A.
Dłużewski, P.
Chikoidze, E.
Barjon, J.
Dumont, Y.
Putkonen, M.
Niinistö, L.
Tang, Dong
Powiązania:
https://bibliotekanauki.pl/articles/2047644.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
75.75.+a
78.30.Fs
78.60.Hk
Opis:
Optical and magnetic properties of ZnMnO films are discussed based on the results of cathodoluminescence, photoluminescence, and magneto-photoluminescence investigations. We show that photoluminescence/cathodoluminescence emissions are strongly quenched and become in-plane inhomogeneous in samples with increased Mn fractions. Strong polarization of photoluminescence is observed, even though excitonic lines do not shift and are not split at magnetic fields up to 6 T.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 261-267
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells
Autorzy:
Zieleniewski, K.
Pakuła, K.
Bożek, R.
Masztalerz, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/2048083.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.De
77.55.hn
81.15.Gh
Opis:
We report studies on electric field built in GaN/Al$\text{}_{0.09}$Ga$\text{}_{0.91}$N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible and mid infra-red interference pattern along the sample, the layer thickness and consequently the quantum well width was determined to vary linearly with the position. Secondly, photoluminescence spectra was taken at different positions. Correlation of those two measurements allows us to determine the built-in electric field to be 0.66 MV/cm, which is considerably larger than previously reported for similar structures.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 657-659
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:
Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048120.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh
Opis:
Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 696-698
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching
Autorzy:
Grodzicki, M.
Wasielewski, R.
Surma, S.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807513.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.65.Cf
81.15.Gh
72.80.Jc
79.60.Dp
68.37.Ps
Opis:
The surface of 6H-SiC(0001) samples was subjected to etching under $H_{2}$/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-82-S-85
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanocrystalline CVD Diamond Coatings on Fused Silica Optical Fibres: Optical Properties Study
Autorzy:
Ficek, M.
Bogdanowicz, R.
Ryl, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402648.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.ug
82.80.Gk
68.55.A-
78.66.Qn
Opis:
Seeding and growth processes of thin diamond films on fused silica optical fibres have been investigated. Glass pre-treatment by dip coating in two detonation nanodiamond (DND) seeding media has been studied. The DND suspension in ethyl alcohol and dispersion of DND in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) were chosen for the seeding purpose. The grain size distribution of nanodiamond particles in both seeding media was kept at the same level (approximately 10-50 nm). After the seeding nanocrystalline diamond films were deposited on the fibres using microwave plasma assisted chemical vapour deposition system. The results of the process were investigated using numerical analysis of scanning electron microscopy images. The molecular structure of diamond has been examined with micro-Raman spectroscopy. Thickness, roughness and optical properties of the nanocrystalline diamond films in VIS-NIR wavelength range were investigated on reference samples using spectroscopic ellipsometry. Light reflection at the fibre end-face for different deposition parameters was also investigated. Proposed seeding method can be further effectively applied for manufacturing of optical fibre sensors. Due to extraordinary properties of diamond, which include high chemical and mechanical resistance, such films are highly desired for optical sensing purposes.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 868-873
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:
Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:
The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound
Autorzy:
Saloum, S.
Alkhaled, B.
Powiązania:
https://bibliotekanauki.pl/articles/1538698.pdf
Data publikacji:
2010-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.70.Ds
52.70.Kz
81.15.Gh
68.43.-h
68.55.J-
Opis:
Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in $N_{2}$/HMDSN plasma. The plasma active species (electrons, ion flux rate, and UV radiation) contributing to the films growth mechanisms have been identified by electrical probes and optical emission spectroscopic analysis. The films have been investigated for their thickness and deposition rate, using quartz crystal microbalance, and sensing properties relating to humidity and gas ($NH_{3},$ $CO_{2}$ and $O_{2}$) sorptive investigations, using the piezoelectric effect of quartz crystals of the quartz crystal microbalance. The effect of the different plasma conditions on the plasma phase characteristics and deposited thin films properties, as well as the correlations between deposition rate and plasma characteristics and between sorptive properties, water contact angles and thin films surface morphology are reported.
Źródło:
Acta Physica Polonica A; 2010, 117, 3; 484-489
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
YIG Film for Magnetic Field Sensor
Autorzy:
Kaya, A.
Atalay, S.
Gencer, H.
Kaya, O.
Kolat, V.
Izgi, T.
Powiązania:
https://bibliotekanauki.pl/articles/1401218.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
84.40.Az
75.30.Ds
41.20.Jb
85.75.Ss
Opis:
Single crystal $Y_3Fe_5O_{12}$ (YIG) film was grown onto (111) oriented gadolinium gallium garnet (GGG) substrate by the liquid phase epitaxy (PLD) technique. The X-ray diffraction measurements showed that epitaxial growth of the film along its (111) axis. The surface characteristic was investigated by atomic force microscopy (AFM) measurement. The magnetic field sensor consisted of a rectangular shape with 5 mm wide, 15 mm long and 5 μm thick YIG film and a pair of identical 50 μm wide microstrip copper transducers elements separated by 6 mm. The filter was tested by measuring reflection $S_{11}$ characteristic at various bias magnetic fields. The results have showed that when the bias field increased from 0 to 2.5 kOe, the frequency value corresponding to $S_{11}$ maxima increased from 1 GHz to 9 GHz. This suggests that the wide range magnetic field sensing and the highly sensitive field sensing are simultaneously fulfilled with the YIG film.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 937-939
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound
Autorzy:
Saloum, S.
Alkhaled, B.
Powiązania:
https://bibliotekanauki.pl/articles/1505352.pdf
Data publikacji:
2011-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.77.Dq
81.15.Gh
73.20.At
78.20.Ci
84.37.+q
Opis:
Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in $N_2$/HMDSN plasma. The structural properties of the deposited films have been investigated by the Fourier transform infrared spectroscopy technique. Spectrophotometry measurements have been used to determine films optical constants (refractive index, dielectric constant and energy band gap); in addition, the photoluminescence from these films has been recorded. The electrical resistivity of films has been estimated from the measurements of current-voltage characteristics of deposited thin films. The effect of the different plasma conditions on these structural, optical and electrical properties of the prepared thin films, as well as the correlation between the different properties are reported.
Źródło:
Acta Physica Polonica A; 2011, 119, 3; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD
Autorzy:
Wesołowski, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807649.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.Ea
68.55.A-
68.55.ag
68.55.J-
68.55.Nq
Opis:
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-62-S-64
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermo-Optical Parameters of Amorphous a-C:N:H Layers
Autorzy:
Pieczyńska, E.
Jaglarz, J.
Marszalek, K.
Tkacz-Śmiech, K.
Powiązania:
https://bibliotekanauki.pl/articles/1377543.pdf
Data publikacji:
2014-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.60.Fs
78.20.-e
78.20.Ci
78.20.N-
78.30.Ly
81.05.U-
81.15.Gh
Opis:
Thermo-optical properties of hydrogenated amorphous carbon nitride layers (a-C:N:H) deposited on crystalline silicon by plasma assisted chemical vapour deposition were studied. The layers were characterized by the Fourier transform infrared spectroscopy and their chemical composition, i.e. [N]/[C] ratio, was determined by energy dispersive X-ray technique. The optic measurements were made by spectroscopic ellipsometer Wollam M2000 equipped with a heated vacuum chamber. The measurements of ellipsometric angles were carried out during heating the sample from room temperature to 300°C. Refractive index, extinction coefficient and the layer thicknesses were calculated by fitting the model of the layer to the ellipsometric data. The results confirm that at about 23°C the layer properties are changed. The measured thermo-optical parameters, dn/dT and dk/dT, show abrupt change from negative to positive values which can be explained by structure graphitization. Simultaneously, the bandgap decreases from 2.5 to 0.7 eV and the layer thickness drops to about 50% of the initial value.
Źródło:
Acta Physica Polonica A; 2014, 126, 6; 1241-1245
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Ni-Based Plasma Detonation Coatings by a Low-Energy DC E-Beam
Autorzy:
Alontseva, D.
Krasavin, A.
Pogrebnjak, A.
Russakova, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400454.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
81.07.-b
68.47.Gh
Opis:
The paper presents the study of Ni-based coatings deposited by plasma detonation onto a steel substrate after direct current low-energy electron beam irradiation and proposes explicit parameters of the electron beam for modification of coatings by irradiation. The choice of irradiation modes is based on the calculation of the temperature profile in the Ni-Fe two-layer absorbents using numerical simulation methods. It was found that the exposure of coatings to irradiation according to the recommended modes leads to the evolution of the structural-phase state of coatings and substantial improvement of performance properties of modified surfaces. The wear resistance of modified surfaces increases 3 times, the microhardness increases on the average 25%.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Comparative Study of the Structure and Phase Composition of Ni-Based Coatings Modified by Plasma Jet or Electron Beam
Autorzy:
Alontseva, D.
Russakova, A.
Krasavin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1398796.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
81.07.-b
68.47.Gh
Opis:
The paper deals with the results of the comparative study into the structure and phase composition, as well as some properties (microhardness, corrosion resistance) of Ni-based powder coatings before and after their modification by DC electron beam or DC pulse plasma jet, according to the modes recommended on the basis of model calculations of the temperature profiles at irradiation. The transmission electron microscopy and X-ray analysis have revealed that irradiation leads to an increase in the volume fraction of reinforcing nanosized intermetallic components in the coatings. There were established certain similarities and differences in the structure and properties of the coatings modified by different types of irradiation. The microhardness of the irradiated coatings has increased in both cases along with the growth of the volume fraction of the CrNi₃ particle phase. However, it was found that the diffusion zone in the coatings modified by plasma jet is higher than that of the coatings modified by electron irradiation. The coating surface melted by the electron beam has a marked reduction of its roughness and better homogenization of the microstructure therefore demonstrating better adhesion and corrosion resistance.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 838-841
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Water Vapor-Plasma-Enhanced Oxidation of Thin Titanium Films
Autorzy:
Pranevicius, L.
Tuckute, S.
Gedvilas, K.
Powiązania:
https://bibliotekanauki.pl/articles/1400471.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.47.Gh
81.65.Mq
66.30.jj
Opis:
It is shown that the water vapor plasma processing offers modified Ti oxidation thermodynamics and kinetics over conventional, thermal oxidation. The 0.3-0.6 μm thick Ti films were sputter-deposited on silicon substrates and subsequently treated with low-pressure water vapor plasma at room temperature under continuous injection of water cloud vapor into the vacuum chamber from the heated water container. The changes of microstructure, phase composition, elemental composition and surface morphology upon the RF-power dissipated in plasma and treatment duration were investigated. We conclude that oxygen diffusion is enhanced in the presence of water vapor plasma, and deduce that fast $H^+$ transients because of their high mobility may be responsible for oxygen diffusion enhancement. This phenomenon can be explained as the result of two coexisting and competing reactions of oxidation and reduction on the surface. The different plasma reduction/oxidation state on the surface can be maintained by coordinated adjustment of an intensity of plasma radiation. Analysis of the experimental results is used to obtain important insights into the behavior of water molecules adsorbed on the oxidized titanium surfaces exposed to water vapor plasma at room temperature.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 907-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructure features, phase relationships and thermoelectric properties of melt-spun and spark-plasma-sintered skutterudites
Autorzy:
Kogut, Iu.
Nichkalo, S.
Ohorodniichuk, V.
Dauscher, A.
Candolfi, C.
Masschelein, P.
Jacquot, A.
Lenoir, B.
Powiązania:
https://bibliotekanauki.pl/articles/1052685.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Eb
72.15.Jf
72.20.Pa
66.70.Df
81.20.Ev
81.16.-c
81.40.Gh
Opis:
Reduction of thermal conductivity remains a main approach relevant to enhancement of figure-of-merit of most thermoelectric materials. Melt spinning combined with spark plasma sintering appears to be a vital route towards fine-grain skutterudites with improved thermoelectric performance. However, upon high-temperature processing the Fe_{4-x}Co_{x}Sb_{12}-based skutterudites are prone to decompose into multiple phases, which deteriorate their thermoelectric performance. In this study we addressed the effects of combined melt spinning and spark plasma sintering on the phase composition and microstructural properties of filled Fe_{4-x}Co_{x}Sb_{12} as well as their influence on thermoelectric characteristics of these compounds. The crystallites of filled Fe_{4-x}Co_{x}Sb_{12} were effectively reduced to sizes below 100 nm upon melt spinning, but also severe decomposition with weakly preserved nominal phase was observed. Spark plasma sintering of melt spun skutterudites resulted in even further reduction of crystallites. Upon short annealing and sintering the n-type materials easily restored into single-phase filled CoSb₃ with nanoscale features preserved, while secondary phases of FeSb₂ and Sb remained in p-type compounds. Relatively high figure-of-merit ZT_{max} of 0.9 at T ≈ 400°C has been gained in nanostructured Yb_{x}Co₄Sb_{12}, however, no significant reduction of thermal conductivity was observed. Abundant impurities in p-type filled Fe_{4-x}Co_{x}Sb_{12} led to drastic drop in their ZT, which even further degraded upon thermal cycling.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 879-883
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-47 z 47

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