MBE Growth of YbTe on GaAs(100) and BaF$\text{}_{2}$(111) Substrates

The structural properties of MBE grown YbTe layers were investigated by X-ray diffraction methods and photoluminescence measurements. YbTe films were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2° off oriented substrates and on the BaF$\text{}_{2}$(100) substrates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction picture. Results of the X-ray rocking curve and photoluminescence excitation measurements indicate that the structural properties of YbTe films are comparable to the properties of the MBE grown ZnTe and CdTe layers on the GaAs(100) substrates. The measured values of the YbTe lattice constant parallel and perpendicular to the growth plane show that the 1 μm thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 arc seconds) for the YbTe films crystallised on the 2 μm thick CdTe bucher layer grown on the GaAs(100) substrate. In the case of BaF$\text{}_{2}$(111) substrate the two-dimensional MBE growth mode of YbTe was not observed.