Thermo-Optical Parameters of Amorphous a-C:N:H Layers

Thermo-optical properties of hydrogenated amorphous carbon nitride layers (a-C:N:H) deposited on crystalline silicon by plasma assisted chemical vapour deposition were studied. The layers were characterized by the Fourier transform infrared spectroscopy and their chemical composition, i.e. [N]/[C] ratio, was determined by energy dispersive X-ray technique. The optic measurements were made by spectroscopic ellipsometer Wollam M2000 equipped with a heated vacuum chamber. The measurements of ellipsometric angles were carried out during heating the sample from room temperature to 300°C. Refractive index, extinction coefficient and the layer thicknesses were calculated by fitting the model of the layer to the ellipsometric data. The results confirm that at about 23°C the layer properties are changed. The measured thermo-optical parameters, dn/dT and dk/dT, show abrupt change from negative to positive values which can be explained by structure graphitization. Simultaneously, the bandgap decreases from 2.5 to 0.7 eV and the layer thickness drops to about 50% of the initial value.