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Wyszukujesz frazę "81.15.Gh" wg kryterium: Temat


Tytuł:
Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films
Autorzy:
Jamshidi, R.
Hosseini, S.
Ahmadizadeh, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1419912.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
Opis:
Dual-frequency plasma enhanced chemical vapor deposition was used to grow diamond-like carbon thin films from $CH_4,$ $H_2$ gas mixture. The effects of radio frequency, microwave power, and gas ratio were investigated. Various species have been identified in the $CH_4-H_2$ plasma using optical emission spectroscopy and their effects on film properties have been studied. Increasing the RF power to 400 W, the variation trend of refractive index and CH, $C_2$ intensity ratios change beyond the 300 W, but the growth rate shows the continuous increasing character from 6 to 11.6 nm/min. Increasing the hydrogen content in the system, the intensity ratio of CH, $C_2$, $CH^{+}$ and growth rate show decreasing tendency and the refractive index rises from 1.98 to 2.63. Adding MW produced plasma to the system grows the refractive index to 2.88 and growth rate to 10.8 nm/min. The water contact angle rises from 58.95° to 73.74° as the RF power increases to 300 W but begins to reduce until 400 W. In addition, the contact angle shows a growing tendency by increasing the hydrogen flow to the chamber. In addition, the structures of the films were investigated by the Raman spectroscopy.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 230-235
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MBE Growth of YbTe on GaAs(100) and BaF$\text{}_{2}$(111) Substrates
Autorzy:
Sadowski, J.
Dynowska, E.
Kowalczyk, L.
Powiązania:
https://bibliotekanauki.pl/articles/1934069.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
The structural properties of MBE grown YbTe layers were investigated by X-ray diffraction methods and photoluminescence measurements. YbTe films were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2° off oriented substrates and on the BaF$\text{}_{2}$(100) substrates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction picture. Results of the X-ray rocking curve and photoluminescence excitation measurements indicate that the structural properties of YbTe films are comparable to the properties of the MBE grown ZnTe and CdTe layers on the GaAs(100) substrates. The measured values of the YbTe lattice constant parallel and perpendicular to the growth plane show that the 1 μm thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 arc seconds) for the YbTe films crystallised on the 2 μm thick CdTe bucher layer grown on the GaAs(100) substrate. In the case of BaF$\text{}_{2}$(111) substrate the two-dimensional MBE growth mode of YbTe was not observed.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1028-1032
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
Autorzy:
Kim, M.
Jin, S.
Choi, H.
Kim, G.
Yim, K.
Kim, S.
Nam, G.
Yoon, H.
Kim, Y.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505152.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
81.15.Gh
Opis:
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 875-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE
Autorzy:
Sadowski, J.
Grodzicka, E.
Dynowska, E.
Adamczewska, J.
Domagała, J.
Przedpelski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968416.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF$\text{}_{2}$(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10$\text{}^{19}$ cm$\text{}^{-3}$ to 10$\text{}^{2 1}$ cm$\text{}^{-3}$ depending on the MBE process parameters.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 967-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Processes of ZnTe Epilayers Deposited by MBE on GaAs(100) Vicinal Surfaces - Studies by Static and Dynamic RHEED
Autorzy:
Sadowski, J.
Dziuba, Z.
Herman, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1932085.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
Static and dynamic reflection high energy electron diffraction (RHEED) has been applied for studying the initial growth processes of ZnTe crystallized by molecular beam epitaxy (MBE) on vicinal surfaces of GaAs(100) substrates. Atomically smooth ZnTe epilayers have been grown by MBE when in situ thermal desorption of the substrate protecting oxide layer was performed in the ultra high vacuum environment of the vacuum growth chamber just before the growth of ZnTe started. By gradual increasing of the substrate temperature of the crystallized ZnTe epilayers from 300°C to 420°C, when recording the RHEED intensity oscillations at these and eleven intermittent temperatures, it has been shown that the transition from the 2D-nucleation growth mechanism to the step-flow growth mechanism of ZnTe occurs at 410°C. Measuring periods of RHEED intensity oscillations recorded during the MBE growth processes it has been demonstrated that the growth rate of ZnTe at constant fluxes of the constituent elements decreases with increasing temperature from 0.37 ML/s at 300°C to 0.22 ML/s at 400°C.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 225-228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MOCVD of Perovskites with Metallic Conductivity
Autorzy:
Gorbenko, O. Yu.
Kaul, A. R.
Molodyk, A. A.
Novozhilov, M. A.
Bosak, A. A.
Babushkina, N. A.
Belova, L. M.
Krause, U.
Wahl, G.
Powiązania:
https://bibliotekanauki.pl/articles/1964529.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
Single source MOCVD techniques were used to prepare perovskite films with metallic conductivity (CaRuO$\text{}_{3}$, LaNiO$\text{}_{3}$, La$\text{}_{0.5}$Sr$\text{}_{0.5}$CoO$\text{}_{3}$ and (La,Pr)$\text{}_{0.7}$(Sr,Ca)$\text{}_{0.3}$MnO$\text{}_{3}$). Structural and electrical properties of the epitaxial layers on the coherent substrates are close to that of the films grown by pulsed laser deposition and magnetron sputtering. Peculiarities of the growth occur on the worse matched substrates, such as a mixture of two orientations, each aligned in the plane of the interface (LaNiO$\text{}_{3}$/MgO) and variant structures in the films on yttrium stabilized zirconia. X-ray diffraction of the films indicates pseudocubic lattice for all R$\text{}_{1-x}$A$\text{}_{x}$MO$\text{}_{3}$ films in spite of the distortions in the bulk material. The dependence of metal-insulator transition in R$\text{}_{1-x}$A$\text{}_{x}$MnO$\text{}_{3}$ on the nature of R and A and film-substrate lattice mismatch was studied.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 237-242
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MBE Growth and Properties of ZnYbTe Layers
Autorzy:
Sadowski, J.
Szamota-Sadowska, K.
Świątek, K.
Kowalczyk, L.
Abounadi, A.
Rajira, A.
Powiązania:
https://bibliotekanauki.pl/articles/1952684.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
61.14.Hg
Opis:
The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb$\text{}^{3+}$ ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MBE layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transitions connected with YbTe were observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1060-1064
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers
Autorzy:
Prażmowska, J.
Korbutowicz, R.
Wośko, M.
Paszkiewicz, R.
Kovač, J.
Srnanek, R.
Tłaczała, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807541.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
81.15.Gh
81.15.Kk
Opis:
Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on $Al_{2}O_{3}$. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-123-S-125
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation of carbon nanomaterials over Ni/ZSM-5 catalyst using simplex method algorithm
Autorzy:
Majewska, J.
Michalkiewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1075535.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.De
81.16.Hc
81.15.Gh
Opis:
Carbon nanomaterials were prepared from methane by catalytic decomposition over a nickel-supported ZSM-5 catalyst. The mole ratio of SiO₂ to Al₂O₃ in ZSM-5 was 200-400. The nickel content was varied from 17 to 23 wt% Ni. In order to find the greatest yield and the highest quality of carbon nanomaterials the simplex design method for planning the experiments was applied. Different parameters such as: temperature, methane flow, nitrogen flow and nickel content in the catalyst were evaluated. The carbon nanomaterials were analyzed by the Raman spectroscopy, scanning and transmission electron microscopy, and total organic carbon analyzer.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 153-157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Limiting Growth of GaN at Low Temperatures
Autorzy:
Ozgit, C.
Donmez, I.
Biyikli, N.
Powiązania:
https://bibliotekanauki.pl/articles/1492654.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.15.Gh
82.80.Pv
Opis:
GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia $(NH_3)$ as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-055-A-057
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Homoepitaxial Growth of YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ on Single Crystal YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ Substrates
Autorzy:
Morishita, T.
Zama, H.
Shiohara, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1964238.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
74.72.-h
81.15.Gh
Opis:
a- and c-axis oriented YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ (YBCO) films were epitaxially grown on (100) and (001) YBCO single-crystal substrates, respectively, by metalorganic chemical vapor deposition under the same preparation conditions including substrate temperature. As a Ba precursor Ba(DPM)$\text{}_{2}$-2tetraen was adopted. This precursor increased a deposition rate for YBCO films to 50 nm/h at 140°C. The substrates were formed from a 14.5x14.5x13 mm YBCO single crystal grown by a modified top-seeded crystal pulling method. Only a few surface atomic layers remained damaged after polishing and cleaning, which however did not affect the epitaxy of film growth. The crystallinity of the interface between an epilayer and substrate was much improved compared to that on usual perovskite substrates.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 97-103
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of Thin Films of the Organic Superconductor α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$
Autorzy:
Moldenhauer, J.
Wachtel, H.
Schweitzer, D.
Gompf, B.
Eisenmenger, W.
Bele, P.
Brunner, H.
Keller, H. J.
Powiązania:
https://bibliotekanauki.pl/articles/1933377.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Kn
73.50.-h
81.15.Gh
Opis:
α-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$ is a quasi-two-dimensional organic metal with a metal-insulator phase transition at 135 K. Thermal treatment at about 80°C leads to the metallic system α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$, which becomes superconducting below 8 K. Thin films of the α-phase (thickness between 500 and 3000 Å) have been evaporated in high vacuum onto several substrates and characterized by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and low field microwave absorption. Depending on the temperature of the substrate and the evaporation rate, the films exhibit different degrees of microcrystallinity, which under certain conditions can be strongly reduced and a completely covering film can be obtained. X-ray diffraction spectra reveal a high orientation with the c-axis perpendicular to the substrate and as well the successful conversion into the α$\text{}_{t}$-phase by tempering. Scanning electron microscopy and atomic force microscopy investigations prove that the conversion takes place without reducing the mechanical quality of the films. Low-field microwave-absorption experiments show that the α$\text{}_{t}$-films become superconducting with an onset at 9 K.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 823-827
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and optical properties of boron nitride grown by MOVPE
Autorzy:
Dąbrowska, A.
Pakuła, K.
Bożek, R.
Rousset, J.
Ziółkowska, D.
Gołasa, K.
Korona, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1160531.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.30.Fs
78.20.-e
Opis:
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Polarized Carrier Injection in MOCVD-Grown YBCO/STO/LSMO Heterostructures with Underlying YBCO Layer
Autorzy:
Vengalis, B.
Plaušinaitiene, V.
Abrutis, A.
Šaltytė, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2041755.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.50.+r
81.15.Gh
85.25.-j
Opis:
The oxide heterostructures composed of superconducting YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ bottom layer, the overlying ferromagnetic La$\text{}_{1-x}$Sr$\text{}_{x}$MnO$\text{}_{3}$ film and SrTiO$\text{}_{3}$ as ultrathin (d≈5 nm) barrier were grown heteroepitaxially onto LaAlO $\text{}_{3}$ substrates by applying pulsed liquid injection metalorganic chemical vapour deposition technique. We report anomalous interface resistance increase with cooling just below superconductive transition temperature (T$\text{}_{c}$≅85 K) and enhanced suppression of supercurrent of strip-like YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ film due to spin-polarized carriers injected from the ferromagnetic manganite layer.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 286-289
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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