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Tytuł:
Formation of Porous $n-A_3B_5$ Compounds
Autorzy:
Šimkiene, I.
Kindurys, A.
Treideris, M.
Sabataityte, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813482.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.-t
81.05.Rm
81.05.Ea
Opis:
Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors,
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1085-1090
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental Investigation of Resistive Sensor for High Power Millimetre Wave Pulse Measurement
Autorzy:
Simniškis, R.
Dagys, M.
Kancleris, Ž.
Tamošiūnas, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813483.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.-t
81.05.Rm
81.05.Ea
Opis:
An experimental investigation of a high power millimetre wave pulse sensor is presented. Two groups of sensors with a flat frequency response were fabricated according to results of the optimisation. The frequency response and voltage standing wave ratio were measured and compared with results of the electrodynamical simulations. The largest measured sensitivity variation of the best sensors within waveguide frequency range was±8%. The reasonable agreement between measured and simulated values of the sensitivity was obtained.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1091-1094
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method
Autorzy:
Jumidali, M.
Hashim, M.
Abdul Aziz, A.
Abd Rahim, A.
Powiązania:
https://bibliotekanauki.pl/articles/1193093.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.10.Bk
81.15.-z
Opis:
Uniform germanium islands (GIs) were grown on Si (100) using a nickel layer as catalyst through the physical vapor deposition of germanium (Ge) powder at 1000°C at different deposition times. Prior to the deposition of Ge layer, nickel (Ni) catalyst was deposited on silicon substrates via radio frequency magnetron sputtering technique. Scanning electron microscopy results showed that the increase in deposition time resulted in a variation in surface morphology. Energy dispersive X-ray spectrometer analysis found that the GI samples composed of Ni element indicating the role of Ni in uniform Ge islands formation. The X-ray diffraction pattern spectra revealed that the GIs exhibited a Ge cubic structure and the intensity of Ge peaks varies with deposition time. In-plane strain indicated that the strain caused by the substrate is tensile and changed to compressive strain at the longer deposition time. The Raman spectra exhibited a red shift in the Ge-Ge peak, compared with the bulk Ge, as a result of compressive strain of the GIs. Fourier transform infrared spectrum analysis also indicated that the optical band gap Eg values of GIs can be varied by deposition time.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1068-1071
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Limiting Growth of GaN at Low Temperatures
Autorzy:
Ozgit, C.
Donmez, I.
Biyikli, N.
Powiązania:
https://bibliotekanauki.pl/articles/1492654.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.15.Gh
82.80.Pv
Opis:
GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia $(NH_3)$ as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-055-A-057
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
Autorzy:
Mizerov, A.
Jmerik, V.
Kaibyshev, V.
Komissarova, T.
Masalov, S.
Sitnikova, A.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1811962.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
81.05.Ea
81.15.Hi
Opis:
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature $T_S$ ≈ 760°C and Ga to activated nitrogen flux ratio $F_Ga//F_N^\ast$ ≈ 1.8.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1253-1258
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
Autorzy:
Zhuang, H.
Li, B.
Zhang, S.
Zhang, X.
Xue, Ch.
Wang, D.
Shen, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813498.pdf
Data publikacji:
2008-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.-k
81.05.Ea
81.15.Cd
Opis:
High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 2; 723-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys
Autorzy:
An, N.
Liu, C.
Fan, C.
Dong, X.
Song, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1030612.pdf
Data publikacji:
2018-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
42.55.Px
81.15.Hi
Opis:
As the most important material parameter of semiconductor, bandgap is necessary to be investigated to meet the design requirements of the high-performance optoelectronic devices. A new method of is proposed to calibrate the bandgap of antimonide based multi-component alloys with considering the effect of spin-orbit splitting off bands and the doublet degeneracy of valance band on the bandgaps of Sb-containing materials. A correction factor is introduced in the conventional calculation, and the spin-orbit splitting method is proposed. Besides, the In_xGa_{1-x}As_ySb_{1-y} films with different compositions are grown on GaSb substrates by molecular beam epitaxy, and the corresponding bandgaps are obtained by photoluminescence to test the accuracy and reliability of this new method. An error rate analysis reveals that the α calculated by the spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the Moon method, which means that the new method can calculate the antimonide multicomponent more accurately with some applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2018, 133, 1; 118-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evolution of InAs Quantum Dots during Annealing Process
Autorzy:
Guo-zhi, Jia
Jiang-hong, Yao
Yong-chun, Shu
Xiao-dong, Xin
Pi-Biao, -
Powiązania:
https://bibliotekanauki.pl/articles/1812057.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Dn
81.05.Ea
73.21.La
Opis:
InAs quantum dots were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode and annealed under $N_2$ atmospheres at different temperatures. The evolution of quantum dots with the annealing temperature increasing were slightly different with the results reported in the literature. Atomic force microscopy investigations of quantum dots uncapped layer show a size initial increase followed by a prompt decrease as annealing temperature increases. It was found that the photoluminescence signal on quantum dots capped with GaAs layer was first slightly red-shifted and then blue-shifted with an increase in annealing temperature. The blue-shift can be attributed to In/Ga interdiffusion in annealing process. Red-shift of optical features indicates the change of the quantum dots compostion, size, and strain from the barrier.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 919-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Technology for GaSb-Based optoelectronic Devices
Autorzy:
Piotrowska, A.
Kamińska, E.
Piotrowski, T. T.
Piskorski, M.
Guziewicz, M.
Papis, E.
Gołaszewska-Malec, K.
Kasjuniuk, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952070.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
81.05.Ea
81.40.-z
Opis:
A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 903-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
Autorzy:
Kim, D.
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, M.
Lee, D.
Kim, J.
Eom, G.
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1537752.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
81.05.Ea
Opis:
Multi-stacked InAs QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 941-944
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
EPR Investigations of Electrons and Neutrons Irradiated Cubic Boron Nitride
Autorzy:
Azarko, I.
Ignatenko, O.
Karpovich, I.
Odzhaev, V.
Kozlova, E.
Zhukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400479.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.-v
81.05.Ea
61.72.J-
Opis:
Microcrystals of cubic boron nitride powders synthesised under different conditions and further irradiated with neutrons and electrons have been investigated. It was found that some changes of the samples' paramagnetic properties depend on the electron irradiation dose. It was also shown that the initial boron type defects growth occurs under thermal neutron, as well as under fast neutrons irradiation. The nitrogen-containing defects concentration changes in a threshold manner.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 923-925
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure
Autorzy:
Křápek, V.
Klenovský, P.
Šikola, T.
Powiązania:
https://bibliotekanauki.pl/articles/1398562.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
73.21.La
81.05.Ea
Opis:
We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs_{1-y}Sb_y capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a two-segment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at narticular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-66-A-69
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance of Epitaxial InGaAs Quantum Rods
Autorzy:
Nedzinskas, R.
Karpus, V.
Čechavičius, B.
Kavaliauskas, J.
Valušis, G.
Li, L.
Khanna, S.
Linfield, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505523.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
81.05.Ea
Opis:
Photoreflectance spectroscopy and photoluminescence have been used to study the optical properties and electronic structure of InGaAs quantum rods grown by molecular beam epitaxy. Spectral features associated with interband optical transitions localized in the quantum rod and the surrounding quantum well regions are examined. Experimental results are compared with calculations performed within the envelope function approximation. A red shift of the quantum rod- and a blue shift of the quantum well-related optical transitions, along with a significant increase in PL intensity have been observed if an $As_4$ source is used instead of an $As_2$ source during the molecular beam epitaxial growth.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 164-166
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
Autorzy:
Benyahia, D.
Kubiszyn, Ł.
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1055151.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.65.Cd
81.05.Ea
61.05.cp
Opis:
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 322-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Microscopy of Cracks in $In_{x}Ga_{1-x}As//GaAs(001)$ Multi-Quantum Wells
Autorzy:
Atici, Y.
Yildiz, K.
Akgul, U.
Powiązania:
https://bibliotekanauki.pl/articles/1402651.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.07.St
81.70.-q
61.72.Ff
Opis:
We studied cracks in two different $In_{x}Ga_{1-x}As//GaAs(001)$ multi-quantum-well structures by electron microscopy. Transmission and scanning electron microscopy analyses of the sample-1 revealed that the epilayers associated with cracks. Detailed experimental works on the cracks were carried out by conventional and high-resolution electron microscopy. It was found that the epilayers were very effective on stopping the cracks in sample-1. Many dislocations were observed around the cracks and cracks tips. SEM images showed that the cracks formed an orthogonal set array accompanying with slits and pits. However, there were not observed any cracks in the sample-2.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 859-862
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by nanoindentation
Autorzy:
Majtyka, A.
Trębala, M.
Tukiainen, A.
Chrobak, D.
Borgieł, W.
Räisänen, J.
Nowak, R.
Powiązania:
https://bibliotekanauki.pl/articles/1075863.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Jj
62.20.F-
81.15.Hi
81.05.Ea
Opis:
The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E=83.07± 1.78 GPa), hardness (H=5.19±0.25 GPa) and "true hardness" (H_{T}=5.73±0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σ_{Y}=3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1131-1133
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Paszkowicz, W.
Trela, J.
Żytkiewicz, Z. R.
Leszczyński, M.
Regiński, K.
Muszalski, J.
Härtwig, J.
Ohler, M.
Powiązania:
https://bibliotekanauki.pl/articles/1964092.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.40.-z
68.55.Ln
61.10.Nz
Opis:
The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 911-915
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy
Autorzy:
Anwand, W.
Schumann, Th.
Brauer, G.
Skorupa, W.
Xiong, S.
Wu, C.
Gebel, T.
Powiązania:
https://bibliotekanauki.pl/articles/1812451.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Ba
78.70.Bj
81.05.Ea
81.07.Bc
Opis:
Flash lamp annealing was applied to the modification of thin amorphous Si layers on $SiO_2$ and glass. Slow positron implantation spectroscopy was used for the characterisation of the microstructure before and after flash lamp annealing. Changes in the structure down to a depth of some micrometres below the surface observed with slow positron implantation spectroscopy will be presented and discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1273-1278
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD
Autorzy:
Kröncke, H.
Figge, S.
Hommel, D.
Epelbaum, B.
Powiązania:
https://bibliotekanauki.pl/articles/1811948.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
01.30.Cc
61.05.cp
81.05.Ea
65.40.De
Opis:
We measured the lattice constants of bulk aluminum nitride crystals at various temperatures by high resolution X-ray diffraction. By the use of a high temperature chamber and a X-ray cryostat a temperature regime from 20 to 1210 K was available. Furthermore, the measured data were fitted by Einstein- and Debye models which yield reliable parameters for the calculation of the thermal expansion coefficients of AlN.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1193-1200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
Autorzy:
Gierałtowska, S.
Sztenkiel, D.
Guziewicz, E.
Godlewski, M.
Łuka, G.
Witkowski, B. S.
Wachnicki, Ł.
Łusakowska, E.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048118.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
77.55.-g
77.84.Bw
81.05.Ea
Opis:
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 692-695
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Investigation of ZnO Nanowires
Autorzy:
Martínez-Criado, G.
Hernández-Vélez, M.
Letard, I.
Cros, A.
Cantarero, A.
Mínguez-Bacho, I.
Susini, J.
Tucoulou, R.
Sans, J.
Sanz, R.
Vázquez, M.
Powiązania:
https://bibliotekanauki.pl/articles/1539044.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
61.10.Ht
78.70.En
81.05.Ea
Opis:
In this study we report the application of synchrotron X-ray fluorescence, photoluminescence and Raman scattering techniques to the analysis of the incorporation of impurities in unintentionally doped ZnO nanowires. Highly ordered one-dimensional ZnO arrays were fabricated by an oxidation process of Zn metal electrodeposited in nanoporous anodic alumina template. X-ray fluorescence data show the contribution of residual elements into the ZnO nanowires growth. A rough analytical quantification of the main light and heavy chemical contents derives impurity concentrations below 1%. The optical efficiency of ZnO nanowires is strongly affected by non-radiative centers up to temperatures as low as 100 K. The photoluminescence was found to be totally dominated by optical transitions associated with the anodic alumina template. Finally, the Raman scattering provides no evidence of local vibrational modes or secondary phases, but it shows the unambiguous signature of the ZnO hexagonal phase.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
Autorzy:
Prucnal, S.
Turek, M.
Gao, K.
Zhou, S.
Pyszniak, K.
Droździel, A.
Żuk, J.
Skorupa, W.
Powiązania:
https://bibliotekanauki.pl/articles/1400484.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.Hc
81.05.Ea
81.07.Ta
81.15.Lm
Opis:
Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 935-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Estimate of the Energy Gap of InN from Measurements of the Fundamental Absorption Edge
Autorzy:
Trautman, P.
Pakuła, K.
Witowski, A. M.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2044548.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.40.Fy
78.30.Fs
78.66.Fd
81.05.Ea
Opis:
Optical absorption between 0.4 and 4.5 eV of an InN layer grown by metalorganic vapour phase epitaxy on sapphire was measured at 296 and 12 K. The layer was also characterized by measurements of the Hall effect and of infrared reflectivity in the region of the plasma edge, which determined the concentration, mobility, and effective mass of electrons in the conduction band. The energy gap of InN was estimated to be equal to 0.9±0.2 eV. It was obtained from the spectral position of the fundamental absorption edge. Corrections to the energy gap resulting from the broadening of the fundamental absorption edge, from the Burstein-Moss shift, and from a band-gap shrinkage due to the impurity potential were included.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 903-908
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Structural Characterization of GaAs MBE Grown on Si Pillars
Autorzy:
Frigeri, C.
Bietti, S.
Scaccabarozzi, A.
Bergamaschini, R.
Falub, C.
Grillo, V.
Bollani, M.
Bonera, E.
Niedermann, P.
von Känel, H.
Sanguinetti, S.
Miglio, L.
Powiązania:
https://bibliotekanauki.pl/articles/1361238.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.16.Rf
61.72.Ff
61.72.Lk
61.72.Nn
68.37.Lp
Opis:
Growth on deeply patterned substrates, i.e. on pillars instead of a continuous substrate, is expected to be very promising to get crack free epilayers on wafers without any bowing. We report here on a structural investigation of GaAs MBE deposited on patterned (001) offcut Si, consisting of pillars 8 μm high and 5 to 9 μm wide, to check mostly the behaviour of the threading dislocations. It is found that only very rarely they propagate up to the GaAs top that will serve as active region in devices. Twins were also detected which sometimes reached the topmost part of GaAs. However, as twins have no associated dangling bonds, they should not be electrically active. Rare antiphase boundaries exist at the interface, hence not harmful for device operation.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 986-990
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD
Autorzy:
Wesołowski, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807649.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.Ea
68.55.A-
68.55.ag
68.55.J-
68.55.Nq
Opis:
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-62-S-64
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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