Skocz do pozycji: 1.

Tytuł:

Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

Autorzy:

Buda, B.
Leifeld, O.
Völlmeke, S.
Schmilgus, F.
As, D. J.
Schikora, D.
Lischka, K.

Powiązania:

https://bibliotekanauki.pl/articles/1952466.pdf

Data publikacji:

1996-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a

Opis:

We investigated the GaAs/ZnSe interface and the influence of the Ga$\text{}_{2}$Se$\text{}_{3}$ formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga$\text{}_{2}$Se$\text{}_{3}$ at the surface was observed.

Źródło:

Acta Physica Polonica A; 1996, 90, 5; 997-1001
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 2.

Tytuł:

Effect of Surface Orientation of the Substrate on the Saturation State of Solution during Liquid Phase Heteroepitaxy

Autorzy:

Olchowik, J. M.

Powiązania:

https://bibliotekanauki.pl/articles/1921670.pdf

Data publikacji:

1992-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a

Opis:

Orientation effects during heteroepitaxy appear at the stage of the layer formation and also during the isothermal contact of the multicomponent solution with the binary substrate. In the paper, the analysis of the InP and GaP substrate orientation on the state of liquid phase was carried out. The analysis based on the in situ comparative determination of the contact supersaturation of the Ga-In-P-As and Ga-In-P solutions. It was found that the contact supersaturation of the alloy was connected with the coupling mechanism of the interface with the binary substrate.

Źródło:

Acta Physica Polonica A; 1992, 82, 5; 745-748
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 3.

Tytuł:

The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films

Autorzy:

Benzhour, K.
Szatkowski, J.
Rozpłoch, F.
Stec, K.

Powiązania:

https://bibliotekanauki.pl/articles/1535896.pdf

Data publikacji:

2010-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.A-

Opis:

Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.

Źródło:

Acta Physica Polonica A; 2010, 118, 3; 447-449
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 4.

Tytuł:

Atomic Force Microscopy Studies of the Surface Scale Formed During Oxidation of Incoloy Ma956

Autorzy:

Czyrska-Filemonowicz, A.
Wasilkowska, A.
Szot, K.
Quadakkers, W. J.

Powiązania:

https://bibliotekanauki.pl/articles/1968770.pdf

Data publikacji:

1998-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a

Opis:

The formation of thin oxide films on {111} and {110} single crystal specimens of Fe20Cr5Al based oxide dispersion strengthened alloy during the early stages of oxidation up to 1000°C was investigated by atomic force microscopy. The atomic force microscopy results revealed the crystalline character of a corrosion layer. The alumina scale morphology (height and grain size of crystallites) was only slightly dependent on the crystallographic texture of the underlying bulk material. The results show that atomic force microscopy has the potential to study surface structure of oxide layers in the initial stages of an oxidation process.

Źródło:

Acta Physica Polonica A; 1998, 93, 2; 399-402
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 5.

Tytuł:

Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of $Cu_2ZnSnS_4$ Thin Films

Autorzy:

Sun, Y.
Yao, B.
Meng, X.
Wang, D.
Long, D.
Hua, Z.

Powiązania:

https://bibliotekanauki.pl/articles/1205220.pdf

Data publikacji:

2014-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a

Opis:

Amorphous Cu-Zn-Sn-S precursor films were prepared by sol-gel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A $Cu_2ZnSnS_4$ film with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200°C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the $Cu_2ZnSnS_4$. However, when the precursor films were annealed with sulfur powder together at temperatures between 360 and 480°C, the CZTS film containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480°C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.

Źródło:

Acta Physica Polonica A; 2014, 126, 3; 751-756
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 6.

Tytuł:

Calcul des contraintes dans une couche mince deposee sur un substrat

Autorzy:

Bertholon, G.
Dupuy, C.
Surry, C.
Redon, R.
Zahouani, H.

Powiązania:

https://bibliotekanauki.pl/articles/1929268.pdf

Data publikacji:

1993-05

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a

Opis:

CALCULATIONS OF THE CONSTRAINTS IN A THIN FILM DEPOSITED ON THE SUBSTRATE: The aim of the present paper is to give simple calculations of the constraints in a thin film deposited on the substrate. The thin film can be obtained by the recrystallization of the surface. It is considered in relation to its substrate, where the force is linearly proportional to the surface area of the film. On the other hand, it is considered to be under the action of a force related to the thermic and compressional constraints. The initial and final boundary conditions in the linearized model play an essential role in the model adopted.

Źródło:

Acta Physica Polonica A; 1993, 83, 5; 581-585
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 7.

Tytuł:

Epitaxial Growths of II-VI Compounds on (110) Substrates

Autorzy:

Cywiński, G.
Wojtowicz, T.
Kopalko, K.
Karczewski, G.
Kossut, J.

Powiązania:

https://bibliotekanauki.pl/articles/1969044.pdf

Data publikacji:

1998-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a

Opis:

We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.

Źródło:

Acta Physica Polonica A; 1998, 94, 2; 281-284
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 8.

Tytuł:

Investigation of Lattice Strains in Layered Structures Containing Porous Silicon

Autorzy:

Wierzchowski, W.
Wieteska, K.
Graeff, W.
Brzozowski, A.
Nossarzewska-Orłowska, E.

Powiązania:

https://bibliotekanauki.pl/articles/2035501.pdf

Data publikacji:

2002-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a

Opis:

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.

Źródło:

Acta Physica Polonica A; 2002, 102, 2; 283-288
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 9.

Tytuł:

Studies of Composition of Surfaces and Interfaces with the Use of Auger Electron Spectroscopy

Autorzy:

Mróz, S.

Powiązania:

https://bibliotekanauki.pl/articles/1945166.pdf

Data publikacji:

1996-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.35.-p
68.55.-a

Opis:

Processes leading to the Auger electron emission from the sample bombarded with a primary electron beam are discussed. It is shown that every element has its characteristic spectrum of Auger lines, and that owing to a small inelastic mean free path of Auger electrons, information obtained from Auger electron spectroscopy concerns the composition of surface layer of 0.5-1 nm thick. Experimental methods of Auger electron spectroscopy are presented together with problems connected with separation of Auger electrons from the secondary electron spectrum. Advantages and disadvantages of some electron energy spectrometers are considered. Methods of quantitative Auger analysis of homogeneous samples with the use of standards and catalogues of Auger spectra are presented. The role of matrix corrections in quantitative Auger analysis is discussed. Problems arising in Auger analysis of insulating samples are considered and methods of discharging of such samples are presented. Depth profiling of inhomogeneous samples by Auger electron spectroscopy with ion bombardment sputtering is described, and possibilities and limitations of this procedure are discussed. Principles of scanning Auger microscopy are presented. Factors determining the lateral resolution are discussed. Possibilities of Auger electron spectroscopy and scanning Auger microscopy in analysis of composition of grain boundaries exposed by in situ fracture are presented and discussed. Possibilities and limitations of Auger electron spectroscopy in the investigation of solid state surfaces are summarized.

Źródło:

Acta Physica Polonica A; 1996, 89, 2; 183-193
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 10.

Tytuł:

Comparison of Processes Occurring during Silver Adsorption on Copper and Nickel at Elevated Temperatures

Autorzy:

Wodecki, J.
Mróz, S.

Powiązania:

https://bibliotekanauki.pl/articles/1943977.pdf

Data publikacji:

1996-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.35.-p
68.55.-a

Opis:

A flux of silver atoms reevaporated from the copper and nickel targets during deposition of silver was measured as a function of the target temperature during spontaneous cooling from 1150 K and during heating the target with deposited several silver monolayers from room temperature to 1150 K. Differences in the measured dependences for both targets give the evidence of competition between reevaporation of silver atoms from the copper surface and their dissolution in the copper bulk and are in accordance with the lack of silver dissolution in nickel. Thus, the role of silver dissolution in the copper surface layer during silver adsorption at elevated temperatures is experimentally evidenced. Activation energy for silver dissolution in the copper substrate was estimated to be equal to 1.7-2.4 eV/atom.

Źródło:

Acta Physica Polonica A; 1996, 89, 1; 69-74
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 11.

Tytuł:

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

Autorzy:

Berger, H.
Möck, P.
Rosner, B.

Powiązania:

https://bibliotekanauki.pl/articles/1929560.pdf

Data publikacji:

1993-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.65.+g

Opis:

The effect of epitaxial misorientation on substrates having vicinal surfaces is studied using two simple geometrical models. The misorientations in two epitaxial systems, single layers and superlattices, can be partially explained by means of these models. Furthermore, the fundamentals of a new description tool for orientation relationships of epitaxial systems are outlined briefly, and two examples of application are given.

Źródło:

Acta Physica Polonica A; 1993, 84, 2; 279-286
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 12.

Tytuł:

Very Thin Silver Layer Growth on the Cu(1II) Face at Different Temperatures

Autorzy:

Mróz, S.
Stachnik, B.

Powiązania:

https://bibliotekanauki.pl/articles/1892480.pdf

Data publikacji:

1992-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.35.-p
68.55.-a

Opis:

Measurements of work function changes (ΔΦ) and Auger Electron Spectroscopy were used for investigation of very thin silver layer adsorption on the (111) face of copper crystal. At room temperature the layer-by-layer growth was observed while at temperatures above 850 K ΔΦ and the Auger peak height kinetics indicated the presence of silver diffusion to the surface layer of the copper sample.

Źródło:

Acta Physica Polonica A; 1992, 81, 2; 233-238
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 13.

Tytuł:

Structural Evolution of Near-Surface Layers in NiTi Alloy Caused by an Ion Implantation

Autorzy:

Swiatek, Z.
Michalec, M.
Levintant-Zayonts, N.
Bonarski, J.
Budziak, A.
Bonchyk, O.
Savitskij, G.

Powiązania:

https://bibliotekanauki.pl/articles/1503940.pdf

Data publikacji:

2011-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.49.Uv

Opis:

The results of X-ray diffraction studies on structural changes in the near-surface layers in the NiTi alloy caused by nitrogen-ion implantation with the energy E = 50 keV and the fluence D = $10^{18} cm^{-2}$ are presented. X-ray diffractometry, using the Philips diffractometer type X'Pert in the Bragg-Brentano geometry, was used to identify the phase composition of NiTi alloy. For layer by layer analysis of structural changes in the near-surface layers, the D8 Discover Bruker diffractometer with polycapilar beam optics was used. The ion-implanted NiTi alloy in the near-surface layer exhibits five phases: the dominating austenite phase, two martensitic phases and a small amount of the $Ni_4Ti_3$ and NTi phases. Along with the decreasing thickness of the near-surface layer investigated in material an increasing fraction of the $Ni_4Ti_3$ and NTi phases was observed. With the thickness of this layer about 340 nm, besides still existing the austenite, $Ni_4Ti_3$ and NTi phases, only one martensitic phase is present in the alloy. Further decrease of the thickness of the near-surface layer to about 170 nm leads to the increasing fraction of the $Ni_4Ti_3$ and NTi phases.

Źródło:

Acta Physica Polonica A; 2011, 120, 1; 75-78
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 14.

Tytuł:

Direct Laser Interference Patterning: Theory and Application

Autorzy:

Zabila, Y.
Perzanowski, M.
Dobrowolska, A.
Kąc, M.
Polit, A.
Marszałek, M.

Powiązania:

https://bibliotekanauki.pl/articles/1810273.pdf

Data publikacji:

2009-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.65.Ac

Opis:

We simulated and experimentally investigated the formation of periodic structures generated by multibeam interference patterning. The simulations at the different setup geometry show that resulting interference pattern is quasi-periodical. The calculated patterns show that the symmetries of the interference maxima depend mostly on the angles of incidence and that a wide variety of patterns can be obtained. Because of the difficulty in aligning four beams sufficiently well to avoid secondary periodicities, for testing we used a three-beam interference configuration. Atomic force microscopy images showed good correspondence between the experimental and simulated interference image, with flat islands which correspond to the destructive interference and narrow channels which correspond to the constructive interference fringes.

Źródło:

Acta Physica Polonica A; 2009, 115, 2; 591-593
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 15.

Tytuł:

Microstructure of the Pulsed Laser Deposited LaSrCuO Films

Autorzy:

Cieplak, M. Z.
Abal'oshev, A.
Zaytseva, I.
Berkowski, M.
Guha, S.
Wu, Q.

Powiązania:

https://bibliotekanauki.pl/articles/2046751.pdf

Data publikacji:

2006-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.55.Jk
68.37.Ps

Opis:

The X-ray diffraction and atomic force microscopy are used to examine the microstructure of La$\text{}_{1.85}$Sr$\text{}_{0.15}$CuO$\text{}_{4}$ films grown by pulsed laser deposition on LaSrAlO$\text{}_{4}$ substrates. The films grow with different degrees of built-in strain, ranging from a large compressive to a large tensile in-plain strain. The tensile strain cannot be attributed to a substrate-related strain. The possible origins of the tensile strain are discussed.

Źródło:

Acta Physica Polonica A; 2006, 109, 4-5; 573-576
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 16.

Tytuł:

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

Autorzy:

Jezierski, K.
Sitarek, P.
Misiewicz, J.
Panek, M.
Ściana, B.
Korbutowicz, R.
Tłaczała, M.

Powiązania:

https://bibliotekanauki.pl/articles/1933782.pdf

Data publikacji:

1995-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
71.35.+z

Opis:

Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E$\text{}_{0}$ critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.

Źródło:

Acta Physica Polonica A; 1995, 88, 4; 751-754
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 17.

Tytuł:

X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen

Autorzy:

Wieteska, K.
Wierzchowski, W.
Graeff, W.
Misiuk, A.
Barcz, A.
Bryja, L.
Popov, V. P.

Powiązania:

https://bibliotekanauki.pl/articles/2035493.pdf

Data publikacji:

2002-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
61.46.+w

Opis:

The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10$\text{}^{16}$ cm$\text{}^{-2}$ were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.

Źródło:

Acta Physica Polonica A; 2002, 102, 2; 239-244
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 18.

Tytuł:

Preparation and Characterisation of Fe/Ce Multilayer

Autorzy:

Dawczak-Dębicki, H.
Marczyńska, A.
Pacanowski, S.
Szymański, B.
Majchrzycki, Ł.
Kowalski, W.
Grembowski, W.
Bilski, T.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1030530.pdf

Data publikacji:

2018-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

Ce/Fe multilayer (ML) with constant Fe (2 nm) and Ce (4.5 nm) sublayer thicknesses was prepared onto naturally oxidised Si(100) substrate using magnetron sputtering. Chemical purity of the sublayers was revealed in-situ by X-ray photoelectron spectroscopy (XPS) measurements. The structure of the sample was studied by standard low- and high-angle X-ray diffraction (XRD). Surface morphology of the ML was examined by atomic force microscopy. Magnetic properties of the sample was studied in the temperature range between 5 and 350 K using a vibrating sample magnetometer in a magnetic field up to 9 T. The hysteresis loops were measured in field perpendicular and parallel to the substrate. Furthermore, hydrogen absorption at a pressure of about 1000 mbar was studied at room temperature (RT) in Pd covered ML using four-point resistivity measurements. The solid state amorphisation reaction have been confirmed by XRD and magnetic measurements of the Ce/Fe ML. The absence of satellite peaks in the low - angle XRD pattern revealed no artificial layered structure. The above results show that interdiffusion of cerium and iron atoms is extremely fast at RT.

Źródło:

Acta Physica Polonica A; 2018, 133, 3; 628-631
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 19.

Tytuł:

Modification of Exchange Coupling in Fe/Nb/Fe/Pd Layered Structures using Hydrogen

Autorzy:

Wachowiak, M.
Marczyńska, A.
Dawczak-Dębicki, H.
Pugaczowa-Michalska, M.
Pacanowski, S.
Majchrzycki, Ł.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1030744.pdf

Data publikacji:

2018-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

Fe/Nb/Fe trilayers were prepared at room temperature using UHV magnetron sputtering. The interlayer exchange coupling energy was determined from a shift of the minor hysteresis loop from the origin. Results showed clear antiferromagnetic (AF) coupling maxima near ım6 and 9 monolayers of Nb spacer. Calculations of the interlayer exchange coupling energy were carried out using ab-initio method with localized spin density approximations of exchange-correlation potential. The experimental results were in good agreement with ab-initio calculations. Furthermore, the position of the AF peaks and coupling energy values could be modified using hydrogen.

Źródło:

Acta Physica Polonica A; 2018, 133, 3; 609-612
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 20.

Tytuł:

Interlayer Exchange Coupling in Nb/Fe Multilayers

Autorzy:

Marczyńska, A.
Pugaczowa-Michalska, M.
Szymański, B.
Majchrzycki, Ł.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1030764.pdf

Data publikacji:

2018-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

The (110) oriented Nb-Fe multilayers (MLs) with constant Fe and variable Nb sublayer thicknesses were prepared at room temperature using UHV magnetron sputtering. The artificial periodicity was revealed by intense satellite peaks in the low- and high-angle X-ray diffraction patterns. Magnetic hysteresis loop measurements at 5 K revealed antiferromagnetic (AF) exchange coupling of the Fe sublayers for Nb spacer thickness of about 3 monolayers. The corresponding AF coupling energy is equal to about -1.36 mJ/m². The Nb spacer thickness corresponding to the position of the AF peak is in good agreement with ab-initio calculations within localized spin density approximations of exchange-correlation potential.

Źródło:

Acta Physica Polonica A; 2018, 133, 3; 605-608
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 21.

Tytuł:

Natural xidation of thin Fe films on V buffer layer

Autorzy:

Dawczak-Dębicki, H.
Marczyńska, A.
Rogowska, A.
Wachowiak, M.
Nowicki, M.
Pacanowski, S.
Jabłoński, B.
Kowalski, W.
Grembowski, J.
Czajka, R.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1055062.pdf

Data publikacji:

2017-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

We have studied oxidation kinetics of Fe thin film under atmospheric conditions using the fact that metallic iron is a ferromagnet but ultrathin natural iron oxides are approximately nonmagnetic at room temperature. As a consequence, oxidation is associated with a loss in total Fe magnetic moment. Results show that the sample with an initial Fe thickness equal to 10 nm oxidize relatively fast (time constant τ=0.05 day), whereby a constant amount of 2.5 nm of metal is transformed into oxides. For lower iron initial thickness (d_{i}=4 nm) the time constant for oxidation significantly increases reaching a value of 2 days. Furthermore, X-ray photoelectron spectroscopy studies performed after 144 days of oxidation revealed formation of hematite (α-Fe₂O₃) thin film on the metallic rest of iron.

Źródło:

Acta Physica Polonica A; 2017, 132, 4; 1272-1276
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 22.

Tytuł:

Controllability Analysis of Reactive Magnetron Sputtering Process

Autorzy:

Ahmad, Z.
Abdallah, B.

Powiązania:

https://bibliotekanauki.pl/articles/1400186.pdf

Data publikacji:

2013-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

02.30.Yy
68.55.-a

Opis:

Reactive magnetron sputtering deposition is one of the major established techniques for deposition of both metallic and nonmetallic thin films on various substrates; it is a very nonlinear process, and exhibits hysteresis behavior with respect to the reactive gas flow. This nonlinearity is characterized by a sudden change in sputtering rate and fraction of compound formation. Most of the problems encountered in the preparation of compound films by reactive sputtering are due to the hysteresis effect. The industrial applications request high rate deposition processes. To meet this demand, it is necessary to have a very good control system of such processes and to ensure a stable sputtering in the transition mode by using closed loop reactive gas control. Therefore, the controllability analysis is an important issue. The aim of this paper is to study the controllability of reactive sputtering process, especially in the transition region; a simple mathematical model based on Berg's original proposal is used. Analysis results show that the reactive magnetron sputtering process shows unstable behavior in the transition region and it is a controllable process.

Źródło:

Acta Physica Polonica A; 2013, 123, 1; 3-6
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 23.

Tytuł:

MOCVD of High Quality LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ Thin Films

Autorzy:

Samoylenkov, S. V.
Gorbenko, O. Yu.
Graboy, I. E.
Kaul, A. R.
Svetchnikov, V. L.
Zandbergen, H. W.

Powiązania:

https://bibliotekanauki.pl/articles/1964530.pdf

Data publikacji:

1997-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.55.-a

Opis:

Epitaxial LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ films were prepared by flash evaporation MOCVD on LaAlO$\text{}_{3}$, SrTiO$\text{}_{3}$, LaSrGaO$\text{}_{4}$ and ZrO$\text{}_{2}$(Y$\text{}_{2}$O$\text{}_{3}$) single crystalline substrates. The highest T$\text{}_{c}$ and j$\text{}_{c}$ (77 K, 100 Oe) values were 89 K, 2.7×10$\text{}^{6}$ A/cm$\text{}^{2}$ (LaAlO$\text{}_{3}$) and 88 K, 1.5×10$\text{}^{6}$ A/cm$\text{}^{2}$ (SrTiO$\text{}_{3}$) respectively. The occurrence of secondary phases inclusions in LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ films correlates with the possibility of epitaxial relations with the film matrix or the substrate.

Źródło:

Acta Physica Polonica A; 1997, 92, 1; 243-247
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 24.

Tytuł:

Electronic Properties of In Situ Prepared Nanocrystalline Fe-Ni-Ti Alloy Thin Films

Autorzy:

Pacanowski, S.
Skoryna, J.
Marczyńska, A.
Skoryna, D.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1386482.pdf

Data publikacji:

2015-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.22.-f
68.55.-a

Opis:

In this contribution we study experimentally the electronic properties of nanocrystalline Fe-Ni-Ti alloy thin films using X-ray photoelectron spectroscopy. The structure of the samples has been studied by X-ray diffraction. Their bulk chemical compositions were measured using X-ray fluorescence method. The surface chemical composition and the cleanness of all samples were checked in situ, immediately after deposition, transferring the samples to an UHV analysis chamber equipped with X-ray photoelectron spectroscopy. X-ray diffraction studies revealed the formation of nanocrystalline Fe-Ni-Ti alloy thin films at a substrate temperature of about 293 K. In situ X-ray photoelectron spectroscopy studies showed that the valence bands of nanocrystalline samples are broader compared to those measured for the polycrystalline bulk alloys. Such modifications of the valence bands of the nanocrystalline alloy thin films could influence on their hydrogenation properties.

Źródło:

Acta Physica Polonica A; 2015, 127, 2; 436-438
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 25.

Tytuł:

Growth and Structural Characterisation of V/Fe Multilayers

Autorzy:

Marczyńska, A.
Skoryna, J.
Szymański, B.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1387036.pdf

Data publikacji:

2015-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

The (110) oriented V/Fe multilayers were prepared at room temperature using UHV magnetron sputtering. As a substrate we have used Si(100) wafers with an oxidised surface. The surface chemical composition and the cleanness of all layers was checked in situ, immediately after deposition, transferring the samples to an UHV analysis chamber equipped with X-ray photoelectron spectroscopy. The structure of the multilayers has been studied ex situ by low- and high-angle X-ray diffraction. The modulation wavelength was determined from the spacing between satellite peaks in the X-ray diffraction patterns. Results were consistent with the values obtained from total thickness divided by the number of repetitions. Growth of the Fe (V) on 1.6 nm V (Fe) underlayer was studied by succesive deposition and X-ray photoelectron spectroscopy measurements starting from 0.2 nm of Fe (V) layer, respectively. From the exponential variation of the X-ray photoelectron spectroscopy Fe 2p and V 2p integral intensities with increasing layer thickness we conclude that the Fe and V sublayers grow homogeneously in the planar mode.

Źródło:

Acta Physica Polonica A; 2015, 127, 2; 552-554
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 26.

Tytuł:

RHEED Intensity Oscillations During the Growth of Indium Ultrathin Films

Autorzy:

Stróżak, M.
Jałochowski, M.
Subotowicz, M.

Powiązania:

https://bibliotekanauki.pl/articles/1892482.pdf

Data publikacji:

1992-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.14.-x
68.55.-a

Opis:

The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely known thicknesses in UHV conditions were prepared These films were deposited on the Si(111)-(7×7) and Si(111)-(6×6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by. reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations are found. The consequences for the understanding of RHEED intensity oscillations and of the growth of ultrathin films are discussed. The amplitude of the RHEED specular beam intensity oscillations as a function f the polar angle and temperature substrate Si was measured.

Źródło:

Acta Physica Polonica A; 1992, 81, 2; 239-245
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 27.

Tytuł:

Temperature Dependence of Magnetisation Reversal and GMR in Spin Valve Structures

Autorzy:

Stobiecki, F.
Stobiecki, T.
Ocker, B.
Maass, W.
Powroźnik, W.
Paja, A.
Loch, C.
Röll, K.

Powiązania:

https://bibliotekanauki.pl/articles/2013156.pdf

Data publikacji:

2000-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.Pa
68.55.Ln
68.55.-a

Opis:

Temperature measurements of magnetisation reversal, resistance and magnetoresistance of Co/Cu/Co/FeMn spin valve structures deposited in different conditions were performed. The influence of exchange anisotropy energy, interlayer coupling energy, and electron transport properties were taken into consideration in explaining differences in giant magnetoresistance effect of investigated samples.

Źródło:

Acta Physica Polonica A; 2000, 97, 3; 523-526
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 28.

Tytuł:

Interlayer Exchange Coupling and Proximity Effect in V-Fe Multilayers

Autorzy:

Marczyńska, A.
Synoradzki, K.
Pugaczowa-Michalska, M.
Toliński, T.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1030414.pdf

Data publikacji:

2018-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

We have studied interlayer exchange coupling (IEC) in (110) oriented V/Fe multilayers with ultrathin sublayers up to 7 monolayers (ML). Results showed that IEC energy depends on both vanadium and iron layer thicknesses. The local maxima of the antiferromagnetic coupling were found for V(7 ML)/Fe(4 ML) and V(3 ML)/Fe(3 ML) multilayers (MLs). The strongest AFM coupling energy of about 1.0 mJ/m² was measured at 5 K for the V(7 ML)/Fe(4 ML) multilayer. The position of the AFM peak for V(X ML)/Fe(3 ML) MLs near 3 ML of V spacer was also revealed by ab-initio calculations. Furthermore, theoretical calculations show an induced negative magnetic moment on V atoms near the V-Fe and Fe-V interfaces due to the proximity effect.

Źródło:

Acta Physica Polonica A; 2018, 133, 3; 597-600
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 29.

Tytuł:

Hydrogen Absorption in Gd Thin Films

Autorzy:

Marczyńska, A.
Pacanowski, S.
Szymański, B.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1030512.pdf

Data publikacji:

2018-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

In this contribution we have studied an initial hydrogen absorption in Gd thin films using in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ standard X-ray diffraction. As an initial hydrogen absorption indicator we have used broadening of the Gd-4f peak. The Gd thin films with a thickness of 200 nm were deposited at room temperature (RT) using UHV RF magnetron sputtering. As a substrate we have used naturally oxidised Si(100) wafers with 20 nm - Pd buffer layer. Furthermore, hydrogen absorption kinetics under a pressure of 100 mbar in Pd covered 200 nm Gd thin film was studied at RT using four-point resistivity measurements.

Źródło:

Acta Physica Polonica A; 2018, 133, 3; 624-627
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 30.

Tytuł:

Characterization of TiAlV Films Prepared by Vacuum Arc Deposition: Effect of Substrate Temperature

Autorzy:

Abdallah, B.
Mrad, O.
Ismail, I.

Powiązania:

https://bibliotekanauki.pl/articles/1400306.pdf

Data publikacji:

2013-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
87.85.jf

Opis:

Three TiAlV films have been prepared by vacuum arc discharge technique at different substrate temperatures (50, 300, and 400°C). The depositions were carried out from aluminum, vanadium and titanium elemental targets. The temperature effects on the crystalline quality and texture have been investigated by means of X-ray diffraction. Two phases have been identified and the grain size has been found to increase with temperature. The composition of the films has been determined by proton induced X-ray emission technique. The Ti ratio was found to increase with temperature. The microhardness, measured by the Vickers indentation method was found to decrease with temperature. X-ray photoelectron spectroscopy was used to study the chemical composition of the passive layer formed on the films by analyzing high resolution spectra of Al 2p, Ti 2p and V 2p. This layer was mainly composed of $TiO_2$ with a small participation of other oxidation and metallic states of Ti, Al and V.

Źródło:

Acta Physica Polonica A; 2013, 123, 1; 76-79
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 31.

Tytuł:

Synthesis of PbTiO₃ Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Autorzy:

Iljinas, A.
Stankus, V.

Powiązania:

https://bibliotekanauki.pl/articles/1398677.pdf

Data publikacji:

2016-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Cd
68.55.-a

Opis:

This article presents investigation of syntheses of perovskite PbTiO₃ thin films by using reactive magnetron layer-by-layer deposition on Si (100) substrate and post-annealing in air and vacuum $(p=5 \times 10^{-3} Pa)$. The film stoichiometry was accurately controlled by the deposition of individual layers with the required ( ≈1 nm) thickness, using the substrate periodic moving over targets. Deposited thin films were annealed in air and in vacuum at 670°C and 770°C for 1 h, respectively. The morphological, structural, and chemical properties of thin films deposited at 300°C substrate temperature and post-annealed thin films using either conventional annealing and thermal annealing in vacuum at different temperatures were investigated and compared between. X-ray diffraction measurements of thin films annealed in air show formed crystalline perovskite PbTiO₃ phase with tetragonality c/a=1.047. The crystallite size of oxidized films depends on the substrate temperature. The structure of post annealed in vacuum thin films strongly depends on Pb/Ti atomic ratio. It was observed that the best structure and morphology forms when atomic ratio of Pb/Ti was 0.80. Pseudocubic phase of lead titanate forms with sufficiently low tetragonality at 670°C temperature.

Źródło:

Acta Physica Polonica A; 2016, 129, 1; 121-124
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 32.

Tytuł:

Strong and Weak Interlayer Exchange Coupling in V/Fe Multilayers

Autorzy:

Marczyńska, A.
Skoryna, J.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1377826.pdf

Data publikacji:

2014-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

The $d_{V}-V$/0.6 nm-Fe multilayers with constant thickness sublayers were prepared onto naturally oxidised Si(100) substrate using UHV (5× $10^{-10}$ mbar) DC/RF magnetron sputtering. Results showed that the saturation field of the V/Fe multilayers oscillate with antiferromagnetic interlayer exchange coupling peaks near the V spacer thickness of about 1.3, 1.6, 2.05 nm. Furthermore, all the samples with vanadium layer thickness near local maxima of the antiferromagnetic coupling show zero remanence. The short period of the antiferromagnetic peak oscillations is due to indirect Ruderman-Kittel-Kasuya-Yosida (RKKY)-type coupling of the Fe layers across vanadium spacer. The absence of the antiferromagnetic peaks in the very strongly coupled region (below $d_{V}$ ≈ 1 nm) could be explained by direct ferromagnetic exchange coupling of the Fe layers due to magnetic polarization of V atoms near V-Fe interface.

Źródło:

Acta Physica Polonica A; 2014, 126, 6; 1315-1317
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 33.

Tytuł:

Oxidation Kinetics of Thin and Ultrathin Fe Films

Autorzy:

Marczyńska, A.
Skoryna, J.
Lewandowski, M.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1387032.pdf

Data publikacji:

2015-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a

Opis:

We have studied oxidation kinetics of Fe thin films under atmospheric conditions using the fact that metallic iron is a ferromagnet but ultrathin natural iron oxides are practically nonmagnetic at room temperature. As a consequence, oxidation is associated with a loss in ferromagnetism. Fe thin films were deposited onto 1.5 nm V thick buffer layer using UHV magnetron sputtering. As a substrate we have used Si(100) wafers with an oxidised surface. Results show that all samples with an initial Fe thickness greater than 6 nm oxidize practically instantaneously, whereby a constant amount of 2.5 nm of metal is transformed into oxides. For iron thickness lower than 6 nm the time constant for oxidation increases considerably reaching a value of 30 days for the initial Fe thickness equal to 4 nm.

Źródło:

Acta Physica Polonica A; 2015, 127, 2; 549-551
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 34.

Tytuł:

MOCVD of Perovskites with Metallic Conductivity

Autorzy:

Gorbenko, O. Yu.
Kaul, A. R.
Molodyk, A. A.
Novozhilov, M. A.
Bosak, A. A.
Babushkina, N. A.
Belova, L. M.
Krause, U.
Wahl, G.

Powiązania:

https://bibliotekanauki.pl/articles/1964529.pdf

Data publikacji:

1997-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Gh
68.55.-a

Opis:

Single source MOCVD techniques were used to prepare perovskite films with metallic conductivity (CaRuO$\text{}_{3}$, LaNiO$\text{}_{3}$, La$\text{}_{0.5}$Sr$\text{}_{0.5}$CoO$\text{}_{3}$ and (La,Pr)$\text{}_{0.7}$(Sr,Ca)$\text{}_{0.3}$MnO$\text{}_{3}$). Structural and electrical properties of the epitaxial layers on the coherent substrates are close to that of the films grown by pulsed laser deposition and magnetron sputtering. Peculiarities of the growth occur on the worse matched substrates, such as a mixture of two orientations, each aligned in the plane of the interface (LaNiO$\text{}_{3}$/MgO) and variant structures in the films on yttrium stabilized zirconia. X-ray diffraction of the films indicates pseudocubic lattice for all R$\text{}_{1-x}$A$\text{}_{x}$MO$\text{}_{3}$ films in spite of the distortions in the bulk material. The dependence of metal-insulator transition in R$\text{}_{1-x}$A$\text{}_{x}$MnO$\text{}_{3}$ on the nature of R and A and film-substrate lattice mismatch was studied.

Źródło:

Acta Physica Polonica A; 1997, 92, 1; 237-242
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 35.

Tytuł:

GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition

Autorzy:

Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.

Powiązania:

https://bibliotekanauki.pl/articles/1934054.pdf

Data publikacji:

1995-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Gh
68.55.-a

Opis:

We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.

Źródło:

Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 36.

Tytuł:

Pulsed Laser Evaporation and Epitaxy

Autorzy:

Dubowski, J.J.

Powiązania:

https://bibliotekanauki.pl/articles/1888083.pdf

Data publikacji:

1991-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
78.65.Fa

Opis:

The application of pulsed lasers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has been the subject of steadily growing interest in the deposition of metals, dielectrics, semiconductors and since 1987, high-T$\text{}_{c}$ superconductors. Laser induced target surface morphology changes, properties of laser induced vapours and pulsed deposition rate associated with the use of a pulsed laser for vacuum epitaxy are discussed. A pulsed laser evaporation and epitaxy (PLEE) system is described and the results of PLEE application for the growth of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te and CdTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum well and superlattice structures are reviewed. Feasibility of PLEE in bandgap engineering is also discussed.

Źródło:

Acta Physica Polonica A; 1991, 80, 2; 221-244
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 37.

Tytuł:

Analysis of Shapes of RHEED Intensity Oscillations Observed for Growing Films

Autorzy:

Mitura, Z.
Daniluk, A.
Stróżak, M.
Jalochowski, M.
Smal, A.
Subotowicz, M.

Powiązania:

https://bibliotekanauki.pl/articles/1890913.pdf

Data publikacji:

1991-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.14.-x
68.55.-a

Opis:

A new method of analysing shapes of RHEED intensity oscillations observed during epitaxial growth of ultrathin films is presented. The intensity of the specular electron beam is computed by solving the one-dimensional Schrödinger equation. The method can be used for interpreting data collected at very low glancing angle (< 1°) of the incident electron beam. In the paper we show numerically determined shapes of the intensity oscillations for different cases of settling of atoms at surfaces of growing films.

Źródło:

Acta Physica Polonica A; 1991, 80, 3; 365-368
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 38.

Tytuł:

MnAs Overlayer on GaN(000$\text{}_{1}$)-(1 x 1) - Its Growth, Morphology and Electronic Structure

Autorzy:

Kowalski, B. J.
Kowalik, I. A.
Iwanowski, R. J.
Łusakowska, E.
Sawicki, M.
Sadowski, J.
Grzegory, I.
Porowski, S.

Powiązania:

https://bibliotekanauki.pl/articles/2038151.pdf

Data publikacji:

2004-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
73.20.At

Opis:

MnAs layer has been grown by means of MBE on the GaN(000$\text{}_{1}$)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.

Źródło:

Acta Physica Polonica A; 2004, 105, 6; 645-650
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 39.

Tytuł:

Magnetic Properties of Thin Films of Fe-Cu-R-Si-B Alloys with R = Nd, Gd, Ho, Y

Autorzy:

Gościańska, I.
Ratajczak, H.
Urbaniak, M.
Konč, M.

Powiązania:

https://bibliotekanauki.pl/articles/1953190.pdf

Data publikacji:

1997-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
75.70.-i

Opis:

Hysteresis loops of thin films of Fe$\text{}_{73.5}$Cu$\text{}_{1}$R$\text{}_{3}$Si$\text{}_{13.5}$B$\text{}_{9}$ (R = Nd, Gd, Ho, Y) alloys were studied by the magnetooptical Faraday method. The films were deposited by flash evaporation technique onto cooled glass substrates. Lanthanides were chosen as substitutes for niobium in the FINEMET type alloys. Coercivity, H$\text{}_{c}$, was determined from the easy- and hard-axis hysteresis loops. The as-deposited films containing Gd and Ho are characterized by rather low values of H$\text{}_{c}$ while the films with Nd and Y show a high isotropic value of H$\text{}_{c}$. Attempts were made to determine the conditions of the film annealing which would ensure the optimum soft magnetic properties of the films studied.

Źródło:

Acta Physica Polonica A; 1997, 91, 1; 237-240
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 40.

Tytuł:

Investigation of Quantum Dot Structures Grown by MOCVD in InAs/GaAs System

Autorzy:

Jasiński, J.
Bożek, R.
Stępniewski, R.
Kozubowski, J.

Powiązania:

https://bibliotekanauki.pl/articles/1991544.pdf

Data publikacji:

1998-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
61.16.Bg

Opis:

Layers of InAs quantum dots grown on [100] GaAs substrates were characterised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyramids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band.

Źródło:

Acta Physica Polonica A; 1998, 94, 3; 369-373
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 41.

Tytuł:

Effects of RF Power on Electrical and Structural Properties of Sputtered $SnO_2$:Sb Thin Films

Autorzy:

Cevher, O.
Guler, M.
Tocoglu, U.
Cetinkaya, T.
Akbulut, H.
Okumus, S.

Powiązania:

https://bibliotekanauki.pl/articles/1218075.pdf

Data publikacji:

2014-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.55.ag
81.15.Cd

Opis:

In this work, antimony doped tin oxide ($SnO_2$:Sb) thin films were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The $SnO_2$:Sb thin films were deposited for 1.0 h in a mixture of Ar and $O_2$ environment with $O_2$/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of $SnO_2$:Sb thin films was assessed using a field emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The average surface roughness $(R_{a})$ was measured with atomic force microscopy. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thicknesses of the films were measured by surface profiler.

Źródło:

Acta Physica Polonica A; 2014, 125, 2; 293-295
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 42.

Tytuł:

AES Studies of Saturation in Surfactant Segregation Process in Co/Cu Multilayers

Autorzy:

Krupiński, M.
Dobrowolska, A.
Kąc, M.
Polit, A.
Zabila, Y.
Marszałek, M.

Powiązania:

https://bibliotekanauki.pl/articles/1539147.pdf

Data publikacji:

2010-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

82.80.Pv
68.55.-a
68.65.Ac

Opis:

The chemical composition of successive layers in a Co/Cu multilayered system was studied during growth with Auger electron spectroscopy. Experiments were carried out on a sample with 10 repetitions of Co(1 nm)/Cu(2 nm) evaporated at a very low deposition rate in ultrahigh vacuum. A very small amount of Bi or Pb (0.06 nm) was deposited on each Cu film in the system. The experimental data have shown that the concentration of Bi and Pb increases with the number of deposited trilayers up to coverage corresponding to 5 trilayers. At that point the concentration of the surfactant saturated. The changes in the surfactant concentrations are described with a simple model depicting the interaction of the surfactant atoms with the system and how the evolution of the segregation processes. It allows the prediction of the saturation concentration and helps to explain the behaviour of various elements used as a surfactant. The comparison between the theoretical predictions and the experimental results is also discussed.

Źródło:

Acta Physica Polonica A; 2010, 117, 2; 420-422
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 43.

Tytuł:

Photoluminescence Study of GaN

Autorzy:

Zhang, X.
Kung, P.
Saxler, A.
Walker, D.
Wang, Τ.
Razeghi, M.

Powiązania:

https://bibliotekanauki.pl/articles/1933686.pdf

Data publikacji:

1995-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.66.-w
71.55.Eq
68.55.-a

Opis:

Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al$\text{}_{2}$O$\text{}_{3}$ (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emission centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.

Źródło:

Acta Physica Polonica A; 1995, 88, 4; 601-606
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 44.

Tytuł:

Modelling the Boronizing Kinetics in AISI 316 Stainless Steel

Autorzy:

Nait Abdellah, Z.
Keddam, M.
Elias, A.

Powiązania:

https://bibliotekanauki.pl/articles/1419004.pdf

Data publikacji:

2012-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Aa
68.55.A-
68.47.De
68.55.jd

Opis:

This work deals with the simulation of the growth kinetics of the $(FeB//Fe_2B)$ bilayer and the diffusion zone on a substrate of AISI 316 stainless steel exposed to the powder-pack boriding process, in the temperature range of 1123-1273 K and a time duration ranging from 2 to 10 h. The developed diffusion model employs a set of mass balance equations at the three growth fronts: [$(FeB//Fe_2B),$ (FeB/diffusion zone) and (diffusion zone/substrate)] under certain assumptions, including the effect of the incubation times during the formation of iron borides and the diffusion zone. For this purpose, a computer code written in Matlab (version 6.5) was created to simulate the boriding kinetics. A good concordance was obtained when comparing the experimental parabolic growth constants taken from the literature and the simulated values of the parabolic growth constants: ($k_{FeB},$ $k_1$ and $k_2$). Moreover, the present model was also used to predict the thicknesses of the $FeB$ and $Fe_2B$ layers and the diffusion zone thickness at various treatment times and boriding temperatures. The simulated values were in good agreement with the experimental borided layers thicknesses.

Źródło:

Acta Physica Polonica A; 2012, 122, 3; 588-592
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 45.

Tytuł:

Effect of Borax Pentahydrate Addition to Acid Bath on the Microstructure and Corrosion Resistance of Zn-Co Coating

Autorzy:

Karahan, İ.

Powiązania:

https://bibliotekanauki.pl/articles/1402495.pdf

Data publikacji:

2015-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.37.-d
68.55.-a
81.65.Kn

Opis:

In this work, the Zn-Co coatings were synthesized on AISI 4140 steel and aluminum plates by using potentiostatic electrodeposition technique in sulphate-based acidic baths with 0, 20, 40 and 60 gl¯¹ of borax pentahydrate, as additive. The effect of borax pentahydrate on the microstructure of the samples was observed using scanning electron microscopy and X-ray diffractometer. The deposition process was investigated by cyclic voltammetry. The effect of borax pentahydrate on the corrosion resistance of the samples was studied by potentiodynamic polarization technique. The results have demonstrated, that the addition of borax pentahydrate was in favor of the growth of grains. The morphology of pyramidal islands on the surface was changed to a more flat structure. The results have also demonstrated that the effect of borax pentahydrate was not monotonous. With increasing concentration, the corrosion potential was at minimum and the charge transfer resistance $R_{t}$ was at maximum for the sample obtained from the bath with 60 gl¯¹ of borax pentahydate, indicating that this sample showed the best corrosion resistance. It was found that current density first decreased and than increased, due to adsorption of a complex of borax pentahydrate and/or changes in the morphology, however, the initial deposition potential was not affected. The addition of borax pentahydrate to the bath led to formation of the best Zn-Co deposits, composed of coalesced globular fine grains, smaller than ≈2 μm in diameter. In addition, all of the studied Zn-Co deposits consisted of η phases. It is suggested that Zn-Co deposits produced in the bath containing 60 gl¯¹ of borax pentahydrate probably offer sacrificial protection to the steel substrate.

Źródło:

Acta Physica Polonica A; 2015, 128, 2B; B-432-B-435
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 46.

Tytuł:

Pulsed Laser Interference Patterning of Metallic Thin Films

Autorzy:

Riedel, S.
Leiderer, P.
Scheer, E.
Boneberg, J.

Powiązania:

https://bibliotekanauki.pl/articles/1490050.pdf

Data publikacji:

2012-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.08.Bc
81.16.-c

Opis:

Pulsed laser interference is applied to metallic and semiconductor thin films in the thickness range of 40-100 nm. At intensities which induce local melting we observe local retraction of the molten material towards the unmolten areas due to dewetting. Thus micropatterning of surface gets feasible. Although this dewetting induced retraction should be a common behaviour of metals on oxide surfaces, two groups of materials can be distinguished. In the first group the former molten areas get completely blank of metal while in the second group a material droplet remains in the center of the molten area. We show that this behaviour can be attributed to a distinctly different way of liquid movement upon local melting.

Źródło:

Acta Physica Polonica A; 2012, 121, 2; 385-387
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 47.

Tytuł:

Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors

Autorzy:

Altarelli, M.

Powiązania:

https://bibliotekanauki.pl/articles/1931851.pdf

Data publikacji:

1995-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.35.Bs
68.55.-a
78.70.Ck

Opis:

A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.

Źródło:

Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 48.

Tytuł:

XAFS Studies of the Behaviour of Bi in Co/Cu Multilayers

Autorzy:

Krupiński, M.
Kąc, M.
Polit, A.
Zabila, Y.
Zając, D.
Marszałek, M.
Kapusta, Cz.
Dobrowolska, A.

Powiązania:

https://bibliotekanauki.pl/articles/1809826.pdf

Data publikacji:

2009-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.05.cj
68.55.-a
68.65.Ac

Opis:

The atomic environment of Bi atoms in the Co/Cu multilayered system was studied with X-ray absorption fine structure spectroscopy. Experiments were carried out on a Co(1 nm)/Cu(2 nm) system with 5 and 10 repetitions of Co/Cu evaporated with very low deposition rate in ultrahigh vacuum. A very small amount of Bi (0.06 nm) was deposited on each Cu film in the system. The X-ray absorption fine structure spectra were measured at the $BiL_3$ edge in the X-ray absorption near-edge structure and extended X-ray absorption fine structure ranges at the Beamline X1 of HASYLAB/DESY synchrotron laboratory in Hamburg. The experimental data showed different local neighbourhood of Bi, depending on the number of Co/Cu bilayer repetitions. The results are discussed in terms of the location and segregation of the Bi atoms as well as its possible oxidation ways.

Źródło:

Acta Physica Polonica A; 2009, 115, 2; 565-567
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 49.

Tytuł:

Stm Observed Surface Structures and Magnetic Properties of MBE-Grown Metallic Thin Films

Autorzy:

Kalinowski, R.
Baczewski, L. T.
Wawro, A.
Meyer, C.
Raułuszkiewicz, J.

Powiązania:

https://bibliotekanauki.pl/articles/1968820.pdf

Data publikacji:

1998-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.Ak
68.55.-a
68.60.Dv

Opis:

Rare-earth epitaxial thin films of Tb and Gd of the thicknesses betweeRare-earth epitaxial thin films of Tb and Gd of the thicknesses between 2 nm and 16 nm were deposited by means of molecular beam epitaxy method. The roughness of the rare-earth films measured by scanning tunneling microscopy was found to be in the range of 1-4.5 nm. The influence of the roughness on the dipolar anisotropy and magnetocrystalline surface anisotropy was estimated. The magnetic measurements have shown that the Gd layers deposited on the Y buffer layers had an easy plane anisotropy. However, for 2 nm thick Gd layer deposited on W buffer layer the perpendicular anisotropy was observed. According to the roughness analysis the possible sources of the perpendicular anisotropy in this sample is mainly the magnetoelastic anisotropy, but the presence of the magnetocrystalline surface anisotropy also cannot be neglected.n 2 nm and 16 nm were deposited by means of molecular beam epitaxy method. The roughness of the rare-earth films measured by scanning tunneling microscopy was found to be in the range of 1-4.5 nm. The influence of the roughness on the dipolar anisotropy and magnetocrystalline surface anisotropy was estimated. The magnetic measurements have shown that the Gd layers deposited on the Y buffer layers had an easy plane anisotropy. However, for 2 nm thick Gd layer deposited on W buffer layer the perpendicular anisotropy was observed. According to the roughness analysis the possible sources of the perpendicular anisotropy in this sample is mainly the magnetoelastic anisotropy, but the presence of the magnetocrystalline surface anisotropy also cannot be neglected.

Źródło:

Acta Physica Polonica A; 1998, 93, 2; 409-413
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 50.

Tytuł:

Nanostructure of Thin Gold Films Investigated by Means of Atomic Force Microscopy and X-Ray Reflectometry Methods

Autorzy:

Żymierska, D.
Auleytner, J.
Domagała, J.
Kobiela, T.
Duś, R.

Powiązania:

https://bibliotekanauki.pl/articles/2035502.pdf

Data publikacji:

2002-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.37.Ps
61.10.Kw

Opis:

A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence X-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films.

Źródło:

Acta Physica Polonica A; 2002, 102, 2; 289-294
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 51.

Tytuł:

Determination of the Diffusion Coefficients of Boron in the FeB and Fe₂B Layers Formed on AISI D2 Steel

Autorzy:

Keddam, M.
Nait Abdellah, Z.
Kulka, M.
Chegroune, R.

Powiązania:

https://bibliotekanauki.pl/articles/1402143.pdf

Data publikacji:

2015-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Aa
68.55.A-
68.47.De
68.55.jd

Opis:

In the present work, a diffusion model was applied to estimate the boron diffusion coefficients in the FeB and Fe₂B layers during the pack-boriding of AISI D2 steel in the temperature range of 1223-1323 K during a variable exposure time between 1 and 8 h. The mass balance equations were formulated at each growing interface by considering the effect of boride incubation times. The estimated values of boron activation energies in the FeB and Fe₂B layers were compared with the literature data. Validation of the present model was made by comparing the experimental thickness of each boride layer, taken from the literature data, with the predicted values. In addition, a simple equation was suggested to estimate the required time to obtain a single Fe₂B layer by diffusion annealing.

Źródło:

Acta Physica Polonica A; 2015, 128, 4; 740-745
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 52.

Tytuł:

A Diffusion Model for the Fe_{2}B Layers Formed on a Ductile Cast Iron

Autorzy:

Keddam, M.

Powiązania:

https://bibliotekanauki.pl/articles/1398194.pdf

Data publikacji:

2018-05

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Aa
68.55.A-
68.47.De
68.55.jd

Opis:

In this work, a diffusion model was applied to estimate the boron diffusion coefficients in the $Fe_{2}B$ layers on the ASTM A-536 ductile iron in the temperature range 1173-1273 K by the powder-pack boriding. The mass balance equation at the ($Fe_{2}B$/substrate) interface was formulated considering the effect of boride incubation times. As a result, the value of activation energy for boron diffusion in the ductile iron was estimated and compared with the literature. To verify the validity of the present model, the experimental $Fe_{2}B$ layer thickness obtained at 1173 K for 10 h was compared to the predicted value. A good concordance was observed between the predicted value of $Fe_{2}B$ layer thickness and the experimental data.

Źródło:

Acta Physica Polonica A; 2018, 133, 5; 1174-1177
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 53.

Tytuł:

Nanostructured Thin Films β-Al-Mg Obtained Using PLD Technique

Autorzy:

Radziszewska, A.
Kąc, S.
Feuerbacher, M.

Powiązania:

https://bibliotekanauki.pl/articles/1537943.pdf

Data publikacji:

2010-05

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.55.Nq
81.15.-z
52.38.Mf

Opis:

In this work, the pulsed laser deposition (PLD) technique was used to grow AlMg thin films from a $β-Mg_{2}Al_{3}$ target with nominal composition: 39.09 at.% Mg and 60.91 at.% Al. The paper presents the study of $β-Mg_{2}Al_{3}$ thin films deposited using the pulsed laser deposition technique. AlMg thin films were prepared on Si (400) substrates and deposited by means of using a QS-Nd:YAG laser (λ = 266, 355 nm). Samples were prepared with laser fluence (1.1 J/$cm^{2}$ and 1.6 J/$cm^{2}$) and at two different substrate (Si) temperatures (25°C and 200°C). The target possessed columnar structure and changes in chemical composition took place as a result of the influence of the laser irradiation. Investigations focused on structure and chemical composition showed that the films generally had nanocrystalline structure and that the quantity of Al and Mg varied in the films.

Źródło:

Acta Physica Polonica A; 2010, 117, 5; 799-802
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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• na półce

Skocz do pozycji: 54.

Tytuł:

X-ray Characterization of Films Formed by Pulsed Laser Deposition on Cold Substrates from YBaCuO Targets

Autorzy:

Pełka, J. B.
Paszkowicz, W.
Gierłowski, P.
Lewandowski, S. J.
Zieliński, M.
Barbanera, S.
Knapp, M.

Powiązania:

https://bibliotekanauki.pl/articles/2030707.pdf

Data publikacji:

2002-05

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

52.38.Mf
81.15.-z
68.55.-a

Opis:

Grazing-incidence X-ray diffraction supplemented with atomic force microscopy and secondary ion mass spectroscopy were applied to the characterization of films deposited by laser ablation on cold substrates from YBaCuO targets and subsequently irradiated with additional laser pulses of lower energy density. Evolution of X-ray diffraction pattern was observed as a function of irradiation dose. For the as-deposited films the pattern was typical of the amorphized solids. For the films irradiated with doses higher than the threshold, the pattern was enriched with the diffraction peaks, whose general features, like peak positions, widths and relative intensities were almost independent of the dose. The size of the crystallites was deduced from the peak widths to be not smaller than 12-16 nm. Comparison of the pattern with patterns of known phases indicates that, apart of the amorphous component, a structure with an admixture of some new metastable or high temperature phase(s) is formed during the process of pulsed laser annealing. The atomic force microscopy observations revealed that the surface roughness shows a pronounced minimum at low irradiation doses. The secondary ion mass spectroscopy investigation confirms that the strongest chemical changes (increase in concentration of yttrium and copper) due to irradiation with higher doses are observed in the near-surface film material.

Źródło:

Acta Physica Polonica A; 2002, 101, 5; 787-794
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 55.

Tytuł:

Complex Magnetic Structure of Strongly Coupled Fe/Si Multilayers

Autorzy:

Dubowik, J.
Stobiecki, F.
Szymański, B.
Kudryavtsev, Yu. V.
Grabias, A.
Kopcewicz, M.

Powiązania:

https://bibliotekanauki.pl/articles/2013056.pdf

Data publikacji:

2000-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
68.55.-a
76.50.+g

Opis:

Fe/Si multilayers with strong bilinear and biquadratic couplings were investigated. A complex structure revealed by the Mössbauer spectroscopy corresponds to multimode ferromagnetic resonance spectra in a non-saturated state. Simple dispersion relations for antiferromagnetic coupled bilayer structures are shown to be inapplicable to the Fe/Si multilayers with a strong biquadratic component to the antiferromagnetic bilinear coupling.

Źródło:

Acta Physica Polonica A; 2000, 97, 3; 451-454
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 56.

Tytuł:

Magnetic Properties and GMR of Sputtered Permalloy/Au Multilayers

Autorzy:

Szymański, B.
Stobiecki, F.

Powiązania:

https://bibliotekanauki.pl/articles/2013183.pdf

Data publikacji:

2000-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.70.-i
75.70.Pa
68.55.-a

Opis:

We report on structural, magnetic, and GMR properties of permalloy/Au multilayers where permalloy = Ni$\text{}_{83}$Fe$\text{}_{17}$, deposited by face-to-face sputtering onto Si(111) substrate. X-ray diffraction studies confirmed a good structural quality of our multilayers. The samples were characterised with vibrating sample magnetometer, longitudinal magnetooptical Kerr effect and giant magnetoresistance measurements. It was determined that our multilayers are magnetically very soft with H$\text{}_{c}$ ≈ 1 Oe and show uniaxial anisotropy with H$\text{}_{K}$ ≈ 5 Oe. For gold sublayer thickness d$\text{}_{Au}$ close to 1.1 nm the antiferromagnetic coupling is present in very narrow Au thickness range (≈ 0.2 nm). Despite a good structural quality of samples relatively small giant magnetoresistance value (1.2% at room temperature) was found. It is due to non-perfect aniferromagnetic coupling caused by pinholes.

Źródło:

Acta Physica Polonica A; 2000, 97, 3; 535-538
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 57.

Tytuł:

Structure of Melt-Spun Co₂MnAl Heusler Alloy

Autorzy:

Piovarči, S.
Diko, P.
Kavečanský, V.
Ryba, T.
Vargová, Z.
Varga, R.

Powiązania:

https://bibliotekanauki.pl/articles/1032646.pdf

Data publikacji:

2017-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
75.50.Cc
61.05.cp

Opis:

The growth-related microstructure and texture of the Co₂MnAl-type Heusler alloy in the form of a melt-spun ribbon was studied by electron microscopy, electron backscattered diffraction and X-ray diffraction. It is shown that melt spinning produces a single-phase disordered Heusler alloy. The fine grain structure at the wheel side of the ribbon exhibits no texture, while dominant columnar grain structure formed on the free surface side exhibits the ⟨111⟩ fibre texture with a declination by about 10 degrees in the spinning direction. The dendritic growth of columnar crystals causes inhomogeneity of the chemical composition on a micrometre scale with a higher Co and Al concentration in the centre of dendritic arms and a higher concentration of Mn at the dendrite arm boundaries.

Źródło:

Acta Physica Polonica A; 2017, 131, 4; 881-883
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 58.

Tytuł:

Crystallisation Kinetics of Co_{75-x}M_xSi_{15}B_{10} (M = Fe, Mn, Cr and x=0, 5) Amorphous Alloys

Autorzy:

Bayri, N.
Kolat, V.
Izgi, T.
Atalay, S.
Gencer, H.
Sovak, P.

Powiązania:

https://bibliotekanauki.pl/articles/1398669.pdf

Data publikacji:

2016-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.50.Kj
65.40.-b
68.55.A-

Opis:

In this study, the effect of Fe, Mn and Cr substitution for Co on the crystallization kinetics of amorphous $Co_{75-x}M_xSi_{15}B_{10}$ (M = Fe, Mn and Cr; x=0 and 5) alloys were investigated. The broad diffraction peaks in the X-ray diffraction patterns for as-quenched ribbons indicated that all of the samples exhibit an amorphous structure. The activation energies of the alloys were calculated from differential thermal analysis data using the Kissinger, Ozawa and Augis-Bennett models. The increased activation energy for Fe, Mn and Cr doped samples indicated that the thermal stability and the crystallization kinetics were improved in the doped samples. The value of the Avrami exponent indicated that the crystallization is typical diffusion controlled three-dimensional growth for all of the samples.

Źródło:

Acta Physica Polonica A; 2016, 129, 1; 84-87
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 59.

Tytuł:

X-ray Absorption Fine Structure Investigation of the Low Temperature Grown ZnCoO Films

Autorzy:

Wolska, A.
Klepka, M.
Witkowski, B.
Witkowski, M.
Guziewicz, E.
Godlewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1431568.pdf

Data publikacji:

2012-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.70.Dm
75.50.Pp
68.55.-a

Opis:

ZnO based diluted magnetic semiconductors are intensively investigated for possible spintronic applications. In the present work we investigate the ZnCoO layers grown at low temperature by atomic layer deposition. The local atomic structure of a series of layers with different Co concentration is investigated by the X-ray absorption fine structure measurements. Two groups of ZnCoO layers are investigated - the ones with an uniform Co distribution and highly nonuniform films. For uniform samples we observe that a majority of Co atoms is built into the ZnO matrix substituting the Zn atoms. In contrast, for the nonuniform samples, metallic Co inclusions are also observed. These results are in strong correlation with the magnetic properties of the films studied separately. Samples with the uniform Co distribution (Co substitutes Zn in ZnO) are paramagnetic, whereas the nonuniform ones show a ferromagnetic response.

Źródło:

Acta Physica Polonica A; 2012, 121, 4; 883-887
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 60.

Tytuł:

Micropatterning of Silicon Surface by Direct Laser Interference Lithography

Autorzy:

Lorens, M.
Zabila, Y.
Krupiński, M.
Perzanowski, M.
Suchanek, K.
Marszałek, K.
Marszałek, M.

Powiązania:

https://bibliotekanauki.pl/articles/1490253.pdf

Data publikacji:

2012-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
81.16.-c
81.65.Cf

Opis:

Direct laser interference lithography is a new and low cost technique which can generate the line- or dot-like periodic patterns over large areas. In the present work, we report on direct fabrication of micrometer structures on Si surface. In the experiments the pulsed high power Nd:YAG laser operating at 1064 nm wavelength was used. Two-beam configuration with an angle of incidence of 40° was employed and different laser fluences up to 2.11 J/$cm^2$ were tested. Areas about 1 cm in diameter have been processed with a single pulse of 10 ns. The laser treated samples were analyzed by atomic force microscopy to investigate the surface topography and to measure the size and depth of the achieved structures. We observed periodic line-like arrays with grating period of the order of 1 μm.

Źródło:

Acta Physica Polonica A; 2012, 121, 2; 543-545
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 61.

Tytuł:

Optical Studies of Non-Magnetic Spacer in Thin Fe/Si Multilayers

Autorzy:

Szuszkiewicz, W.
Jouanne, M.
Morhange, J.
Chernyshova, M.
Kowalczyk, L.
Łusakowska, E.
Wandziuk, P.
Luciński, T.

Powiązania:

https://bibliotekanauki.pl/articles/2044545.pdf

Data publikacji:

2005-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
75.70.-i
78.30.-j

Opis:

Structures containing magnetic metallic layers attract a lot of attention because of their possible applications in the area of spintronics. The hybrid structures compatible with the Si crystal lattice parameter are of special interest. In this work the short-period Fe/Si multilayers were grown by the sputtering onto (001)-oriented Si substrate and investigated by various techniques. After the deposition, all multilayers were characterized by atomic force microscopy. The goal of the present paper was to determine the chemical composition of thin layer created at the interface in Fe/Si multilayers due to the Fe diffusion into Si, as well as to analyze the phenomena, which take place in this area. The results of the optical characterization by the Raman scattering were correlated with the magnetic properties of investigated structures (determined by means of the Kerr rotation).

Źródło:

Acta Physica Polonica A; 2005, 108, 5; 891-896
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 62.

Tytuł:

Magnetic Study of $α^{\prime\prime}$ and $γ^{\prime\prime}$-Phases of Iron Nitride Thin Films

Autorzy:

Frątczak, E.
Prieto, J.
Moneta, M.

Powiązania:

https://bibliotekanauki.pl/articles/1368214.pdf

Data publikacji:

2014-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.55.-a
61.05.Qr

Opis:

Most of the Fe-nitride phases have been studied in much detail. Nevertheless, there is still a debate about the most efficient, exact and controlled way of obtaining thin films of the desired iron nitride phases. Thin films of iron nitrides were deposited by Molecular Beam Epitaxy in Ultra High Vacuum. By changing the growth parameters we tried to obtain the α"-phase in its purest form. We worked also on iron mononitride, FeN (γ"-FeN) which is known to exist in different phases. The stoichiometry of the samples was determined by means of resonant Rutherford Backscattering Spectroscopy. The samples were studied by room temperature Conversion Electron Mössbauer Spectroscopy. We achieved as much as 24% of pure α"-phase and provide evidence of the existence of γ"-FeN with vacancies and of the transformation of nonmagnetic γ"-phase into magnetic ε-phase after time exposure.

Źródło:

Acta Physica Polonica A; 2014, 126, 1; 214-215
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 63.

Tytuł:

Transport and Magnetic Properties of Rare Earth Compounds Epitaxially Grown on Semiconductors

Autorzy:

Chroboczek, Jan

Powiązania:

https://bibliotekanauki.pl/articles/1888050.pdf

Data publikacji:

1991-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

72.20.My
68.55.-a
75.50.Pp

Opis:

Growth, crystallographic structure, electrical transport and magnetic properties of cubic Er pnictides and hexagonal Er silicide layers, epitaxially grown on semiconductors, are reviewed. Magnetoresistance anomalies observed at low temperatures are discussed in terms of a model developed for electron-magnetic moment interactions in antiferromagnetic systems.

Źródło:

Acta Physica Polonica A; 1991, 80, 2; 179-192
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 64.

Tytuł:

AFM, XRD and HRTEM Studies οf Annealed FePd Thin Films

Autorzy:

Perzanowski, M.
Zabila, Y.
Morgiel, J.
Polit, A.
Krupiński, M.
Dobrowolska, A.
Marszałek, M.

Powiązania:

https://bibliotekanauki.pl/articles/1539149.pdf

Data publikacji:

2010-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.35.bd
68.55.-a
73.50.-h
68.37.Yz

Opis:

Ferromagnetic FePd L $1_{0}$ ordered alloys are highly expected as forthcoming high-density recording materials, because they reveal a large perpendicular magnetocrystalline anisotropy [1]. The value of the magnetic anisotropy of FePd alloy strongly depends on the alloy composition, degree of alloy order as well as on the crystallographic grain orientation. In particular, to obtain the perpendicular anisotropy, it is necessary to get the films with (001) texture. One of the successful methods, which allows one to obtain highly ordered alloy, is a subsequent deposition of Fe and Pd layers, followed by an annealing at high temperature. This paper presents the study of the FePd thin alloy film structure changing in the result of high temperature annealing. During the annealing in high vacuum, the measurements of electrical resistance were performed, indicating the regions of different structure evolution. Changes in the crystal structure and surface morphology induced by thermal treatment were investigated by X-ray diffraction, atomic force microscopy, as well as high resolution transmission electron microscopy and then compared with electrical resistivity measurement. The slow thermal annealing of the deposited layers leads to the formation of L $1_{0}$ ordered FePd alloy with preferred (111) grain orientation. After the annealing at the highest used temperature, the dewetting process was observed, resulting in a creation of well oriented, regular nanoparticles.

Źródło:

Acta Physica Polonica A; 2010, 117, 2; 423-426
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 65.

Tytuł:

XPS and UPS Valence Band Studies of Nanocrystalline Ni-Ti Alloy Thin Films

Autorzy:

Pacanowski, S.
Skoryna, J.
Szajek, A.
Marczyńska, A.
Dawczak-Dębicki, H.
Werwiński, M.
Majchrzycki, Ł.
Smardz, L.

Powiązania:

https://bibliotekanauki.pl/articles/1030748.pdf

Data publikacji:

2018-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.22.-f
68.55.-a
82.80.Pv

Opis:

In this contribution we study valence bands of in-situ prepared nanocrystalline NiTi and Ni₃Ti alloy thin films using X-ray and ultraviolet photoelectron spectroscopy. Additionally, theoretical valence band of NiTi alloy was calculated by ab-initio methods. The structure and morphology of the samples were studied by X-ray diffraction and atomic force microscopy, respectively. Furthermore, hydrogen absorption and desorption kinetics at a pressure of about 1000 mbar were studied in Pd covered nanocrystalline NiTi alloy thin film using four-point resistivity measurements. Results showed that modifications of the valence bands of the Ni-Ti thin films due nanocrystalline structure can influence on the room temperature hydrogen absorption and desorption kinetics.

Źródło:

Acta Physica Polonica A; 2018, 133, 3; 613-616
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 66.

Tytuł:

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

Autorzy:

Iljinas, A.
Burinskas, S.
Dudonis, J.

Powiązania:

https://bibliotekanauki.pl/articles/1503904.pdf

Data publikacji:

2011-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Cd
68.55.-a
78.20.-e

Opis:

In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.

Źródło:

Acta Physica Polonica A; 2011, 120, 1; 60-62
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 67.

Tytuł:

Determination of the Direction of the c-Axis of $L1_0$ FePt Thin Films with the MÖssbauer Spectroscopy

Autorzy:

Laenens, B.
Almeida, F.
Vantomme, A.
Meersschaut, J.

Powiązania:

https://bibliotekanauki.pl/articles/1814040.pdf

Data publikacji:

2007-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.05.Qr
68.55.-a
81.15.-z

Opis:

The continued growth of storage capacity requires new innovations in recording media and in particular, in magnetic nanostructures. FePt thin films in the $L1_0$-phase are interesting candidates for high-density magnetic recording media due to their large magnetocrystalline anisotropy. In the present work, we investigated the magnetic and structural properties of FePt thin films directly grown on MgO(110) with molecular beam epitaxy. The purpose was to gain insight in the correlation between the magnetization process and the morphology of the FePt thin films. We introduce conversion electron MÖssbauer spectroscopy to derive the direction of the easy magnetization axis with respect to the substrate. The results are compared to the characterization performed with high angle X-ray diffraction.

Źródło:

Acta Physica Polonica A; 2007, 112, 6; 1313-1318
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 68.

Tytuł:

X-Ray and Electron-Optical Characterization of ZnTe/CdTe and ZnTe/GaAs Epitaxial Layers Obtained by the MBE Method

Autorzy:

Auleytner, J.
Dziuba, Z.
Górecka, J.
Pełka, J.
Regiński, K.

Powiązania:

https://bibliotekanauki.pl/articles/1931657.pdf

Data publikacji:

1994-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.14.Hg
61.10.-i
68.55.-a

Opis:

X-ray diffraction topography (Bragg diffraction) and X-ray rocking curve measurements were used to study the perfection and structural properties of ZnTe epitaxial layers on the CdTe and GaAs substrates. ZnTe epitaxial layers on CdTe were grown by MBE method by using a machine made in the Institute of Physics of the Polish Academy of Sciences. The ZnTe layers on GaAs were produced on the other, factory-made MBE system. The comparison between the X-ray topographical images of the substrate and epitaxial layer shows that imperfections on the substrate surface cause imperfections in the epitaxial layer. The results of double-crystal diffractometry measurements show that the perfection of the layer on the GaAs substrate is higher than that on the CdTe. The presence of microtwining in the ZnTe layer on the CdTe substrate was confirmed by RHEED measurements. The X-ray standing wave fluorescent spectra were also measured for the samples.

Źródło:

Acta Physica Polonica A; 1994, 86, 4; 567-574
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 69.

Tytuł:

Scanning Tunneling Microscopy of Ordered Organic Monolayer Films on Si(001)

Autorzy:

Hamers, R. J.
Hovis, J.
Liu, H.

Powiązania:

https://bibliotekanauki.pl/articles/1968711.pdf

Data publikacji:

1998-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.16.Ch
34.50.Dy
68.55.-a

Opis:

Scanning tunneling microscopy and optical spectroscopy techniques have been utilized to investigate the formation of ordered organic monolayer films on the (001) face of silicon. Cyclopentene and 1,5-cyclooctadiene both produce monolayer films that are ordered translationally and rotationally. The rotational orientations of the molecules arise from the directional interaction of the π orbitals of the starting alkene with the π orbital of the dimers comprising the reconstructed Si(001) surface, with the Si(001) surface acting as a template for determining the directionality of molecules in the subsequent organic film. Using single-domain Si(001) samples, it is shown that the molecular films also exhibit anisotropy in optical properties when measured on centimeter length scales.

Źródło:

Acta Physica Polonica A; 1998, 93, 2; 289-295
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 70.

Tytuł:

Simulation of Langmuir-Blodgett Film Surface Stm Images

Autorzy:

Agabekov, V. E.
Zhavnerko, G. K.
Bar, G.
Cantow, H.-J.

Powiązania:

https://bibliotekanauki.pl/articles/1968763.pdf

Data publikacji:

1998-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
71.20.Rv
02.60.Cb

Opis:

The simulation of the STM image of a hydrocarbon tail of a fatty acid was carried out and compared to the experimental results. The simulation procedure includes calculations of the distribution of an isolated molecule electronic density by the extended Huckel-Hoffmann method. An agreement between the calculated and experimental STM images of closely packed Langmuir-Blodgett film of cobalt behenate on the graphite surface was observed. The weak interactions between the graphite surface and the adsorbed molecules constituting bi- and multilayer Langmuir-Blodgett films can be neglected in simulations of STM images.

Źródło:

Acta Physica Polonica A; 1998, 93, 2; 383-386
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 71.

Tytuł:

Preparation of Very Large YBCO Films on Single- and Polycrystalline Substrates

Autorzy:

Kinder, H.
Prusseit, W.
Semerad, R.
Utz, B.

Powiązania:

https://bibliotekanauki.pl/articles/1964233.pdf

Data publikacji:

1997-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Cd
74.72.-h
68.55.-a

Opis:

High quality YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ thin films on areas of up to 9" in diameter have been grown by reactive thermal co-evaporation using a rotating substrate holder. A scanning inductive j$\text{}_{c}$ probe is used to monitor the homogeneity of critical current densities which are typically greater than 2 MA/cm$\text{}^{2}$. The same technique also allows a double sided deposition for filter applications. Surface resistance values are found to be below 500 μΩ at 10 GHz. On biaxially aligned buffer layers on polycrystalline substrates j$\text{}_{c}$ values of 1.4 MA/cm$\text{}^{2}$ are achieved at 77 K as well. We have also studied the properties of Nd$\text{}_{1-x}$Ba$\text{}_{2+x}$Cu$\text{}_{3}$O$\text{}_{7}$ films grown with the same system.

Źródło:

Acta Physica Polonica A; 1997, 92, 1; 47-54
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 72.

Tytuł:

Growth Spirals Appeared in c-Axis Oriented YBCO Films Grown on MgO Substrate by Sputtering

Autorzy:

Suzuki, T.
Azechi, K.
Sakurai, S.
Aizawa, S.

Powiązania:

https://bibliotekanauki.pl/articles/1964376.pdf

Data publikacji:

1997-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

74.76.Bz
74.72.Bk
68.55.-a

Opis:

The early stages of growth and the evolution of surface microstructure of epitaxial c-axis YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ thin films were studied as a function of film thickness, growth temperature, and growth rate. The films were grown in situ on as-polished or annealed MgO(100) substrates by off-axis magnetron sputtering. Atomic force microscopy was used to observe the surface microstructure. From the results at early stages, we proposed a growth model of spirals for the films grown on as-polished substrate, i.e. spirals are formed around the surface roughness of the substrate. Growth temperature and growth rate dependence on the density of spirals support this model. That is, the density of spirals does not change according to the change of growth temperature (600-740°C) or growth rate (7-80 nm/h).

Źródło:

Acta Physica Polonica A; 1997, 92, 1; 215-220
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 73.

Tytuł:

High Resolution X-ray Reciprocal Space Mapping

Autorzy:

Bauer, G.
Li, J. H.
Holy, V.

Powiązania:

https://bibliotekanauki.pl/articles/1943985.pdf

Data publikacji:

1996-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.10.-i
68.55.-a
61.72.Lk

Opis:

A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of the isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in the epilayers.

Źródło:

Acta Physica Polonica A; 1996, 89, 2; 115-127
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 74.

Tytuł:

Electrical, Magnetic, and Structural Properties of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te Layers Grown by Molecular Beam Epitaxy

Autorzy:

Nadolny, A. J.
Sadowski, J.
Story, T.
Dobrowolski, W.
Arciszewska, M.
Świątek, K.
Kachniarz, J.
Adamczewska, J.

Powiązania:

https://bibliotekanauki.pl/articles/1992036.pdf

Data publikacji:

1998-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.20.Ck
75.30.Et
68.55.-a

Opis:

Layers of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF$\text{}_{2}$ substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p$\text{}_{77}$=7×10$\text{}^{19}$ -2×10$\text{}^{21}$ cm$\text{}^{-3}$. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T$\text{}_{C}$ ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10$\text{}^{20}$ cm$\text{}^{-3}$) and remain paramagnetic in the temperature range studied T=4.5÷70 K.

Źródło:

Acta Physica Polonica A; 1998, 94, 3; 449-453
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 75.

Tytuł:

Effect of the Plasma Deposition Parameters on the Properties of Ti/TiC Multilayers for Hard Coatings Applications

Autorzy:

Saoula, N.
Henda, K.
Kesri, R.
Shrivastava, S.
Erasmus, R.
Comins, J.

Powiązania:

https://bibliotekanauki.pl/articles/1490973.pdf

Data publikacji:

2012-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Cd
68.35.Ct
68.55.-a
68.37.Ps

Opis:

Titanium carbide (TiC) hard coatings have been obtained on steel and silicon substrates by rf magnetron sputtering process. Two layer coatings have been deposited in order to improve adhesion on steel. The lower layer was titanium metal and the upper TiC layer was obtained by reactive sputtering of the titanium target in Ar and methane gas mixture. The study confirmed that the TiC layer composition depends on the reactive sputtering gas composition and substrate bias voltage. Film microhardness was measured by microindentation. Measurement results showed that the hardness coating depends on the microstructure of our coatings and the polarization of bias substrate is an important parameter to control the microstructure.

Źródło:

Acta Physica Polonica A; 2012, 121, 1; 172-174
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 76.

Tytuł:

Surface Self-Diffusion of Iridium: Field Electron Emission Study

Autorzy:

Antczak, G.
Błaszczyszyn, M.
Błaszczyszyn, R.

Powiązania:

https://bibliotekanauki.pl/articles/2014253.pdf

Data publikacji:

2000-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.16.-d
68.35.Fx
68.90.+g
68.55.-a

Opis:

The self-diffusion of iridium was studied by means of field electron microscopy. The measurements, based on the well-known process of surface build-up, were carried out under the UHV conditions within the temperature range of 790-935K. The activation energy for the diffusion was determined to be equal to 2.10±0.10eV/atom (48.4±2.3kcal/mol). This value is compared with activation energies for self-diffusion on other metal surfaces, as well as with those for self-diffusion of single iridium atoms and clusters on iridium, known from the field ion microscopy measurements.

Źródło:

Acta Physica Polonica A; 2000, 98, 4; 383-388
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 77.

Tytuł:

Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films

Autorzy:

Rusu, D.
Rusu, G.
Luca, D.

Powiązania:

https://bibliotekanauki.pl/articles/1505094.pdf

Data publikacji:

2011-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

77.55.hf
68.55.-a
68.55.J-
81.15.Aa
78.20.-e

Opis:

Zinc oxide (ZnO) thin films (with thickness ranged from 780 nm to 1150 nm) were prepared by thermal oxidation in air (at 600-700 K, for 20-30 min) of vacuum evaporated metallic zinc films. The Zn films were deposited on glass substrates at room temperature. The crystalline structure of ZnO thin film samples was investigated using X-ray diffraction technique. The diffraction patterns revealed that the ZnO thin films were polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to substrate surface. Some important structural parameters (lattice parameters of the hexagonal cell, crystallite size, Zn-O bond length, residual stress, etc.) of the films were determined. The surface morphology of the prepared ZnO thin films, investigated by atomic force microscopy, revealed a uniform columnar structure. The spectral dependence of transmission coefficient has been studied in the wavelength range from 300 nm to 1700 nm. The optical energy band gap calculated from the absorption spectra (supposing allowed direct band-to-band transitions) are in the range 3.17-3.19 eV. The dependence of the microstructural and optical characteristics on the preparation conditions (oxidation temperature, oxidation time, etc.) of the oxidized zinc films is discussed.

Źródło:

Acta Physica Polonica A; 2011, 119, 6; 850-856
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 78.

Tytuł:

Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD

Autorzy:

Wesołowski, M.
Strupiński, W.

Powiązania:

https://bibliotekanauki.pl/articles/1807649.pdf

Data publikacji:

2009-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Gh
81.05.Ea
68.55.A-
68.55.ag
68.55.J-
68.55.Nq

Opis:

Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.

Źródło:

Acta Physica Polonica A; 2009, 116, S; S-62-S-64
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 79.

Tytuł:

Selected Properties of ZnO Coating on Mg-Based Alloy for Biomedical Application

Autorzy:

Kania, A.
Pilarczyk, W.
Babilas, R.

Powiązania:

https://bibliotekanauki.pl/articles/1029768.pdf

Data publikacji:

2018-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
61.05.cp
68.37.Ps
82.45.Bb

Opis:

Magnesium and its alloys are interesting materials for biodegradable implant applications. Magnesium alloys have very good strength properties, they are lightweight, but their main disadvantage is a low corrosion resistance in the physiological environment. Various modifications of a Mg alloys surface by deposition of different coatings are used to prevent untimely dissolution. The article presents the investigation results of a thin ZnO coating deposited on a MgCa2Zn1Gd3 alloy by means of the magnetron sputtering method. The studies include: scanning electron microscope observation of the ZnO surface, X-ray phase analysis, surface roughness measurement in atomic force microscopy, the microhardness test and potentiodynamic corrosion resistance test in the Ringer solution at 37°C. It was found that the ZnO coating is compact and continuous. It increases the hardness of the MgCa2Zn1Gd3 alloy and also improves its corrosion resistance. The corrosion potential is shifted slightly towards the positive values from -1.52 V to -1.50 V for the alloy with the ZnO coating.

Źródło:

Acta Physica Polonica A; 2018, 133, 2; 222-224
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 80.

Tytuł:

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

Autorzy:

Göde, F.
Yavuz, F.
Kariper, İ.

Powiązania:

https://bibliotekanauki.pl/articles/1401980.pdf

Data publikacji:

2015-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.37.Ps
68.55.-a
78.20.-e
73.61.Ga

Opis:

Lead sulfide thin films are deposited on glass substrates at room temperature for 2 h by chemical bath deposition. The structure, surface morphology, optical and electrical properties of the thin films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and the Hall effect measurements. The obtained films show the formation of well crystallized PbS with a cubic rock salt structure and with the preferential orientation (111) plane. The lattice parameter and crystallite size of the films are found as a=600 Å and 62 nm from the X-ray reflectivity data from the atomic force microscopy image, respectively. The band gap width of the films is determined as 2.84 eV. The optical parameters of the films such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant are evaluated. Moreover, from the Hall measurements, electrical resistivity, conductivity carrier mobility, and carrier concentration of the films are determined as 3.722 Ω m, 0.268 Ω¯¹ m¯¹, 8.486× 10¯¹ m² V¯¹ s¯¹, and $1.976 \times 10^{18} m^{-3}$, respectively.

Źródło:

Acta Physica Polonica A; 2015, 128, 2B; B-215-B-218
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

Zmień widok

• na półce

Skocz do pozycji: 81.

Tytuł:

Fabrication and Optical Characterization of CdSe Thin Films Grown by Chemical Bath Deposition

Autorzy:

Kariper, İ.
Bağlayan, Ö.
Göde, F.

Powiązania:

https://bibliotekanauki.pl/articles/1401982.pdf

Data publikacji:

2015-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.37.Hk
68.55.-a
78.20.Ci
81.10.Dn

Opis:

Cadmium selenide thin films with different pH values (pH = 10, 11, 12 and 13) are produced on glass substrates at 50°C for 3 h by chemical bath deposition technique. The structural, morphological and optical properties of the films are characterized by X-ray diffraction, scanning electron microscopy and optical absorption spectroscopy, respectively. The obtained films have hexagonal structure. The optical transparency of the films varies between 85% and 98% at wavelength of λ = 550 nm. The scanning electron microscopy studies show that the film deposited at pH = 10 exhibits the formation of nanorods in the width range from 1.8 μm to 10.9 μm and length range from 20.0 μm to 85.5 μm. The optical properties of the films are determined by measuring transmittance and absorbance characteristics which are used to find the optical band gap energy, refractive index, extinction coefficient and real dielectric constant. The band gap width of the films increases from 1.70 eV to 2.30 eV with increasing pH values. The refractive index of the film at pH = 10 is found as 1.54.

Źródło:

Acta Physica Polonica A; 2015, 128, 2B; B-219-B-221
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 82.

Tytuł:

Garnet Single Crystal as Substrate Material for HTSC Films

Autorzy:

Mukhopadhyay, P.

Powiązania:

https://bibliotekanauki.pl/articles/1964306.pdf

Data publikacji:

1997-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
68.60.-p
74.76.Bz
81.15.-z

Opis:

The use of high temperature superconductor for device application has made the compatibility of the film and substrate an important issue. Garnets having reasonably low dielectric constant and low dielectric losses can be viable low cost substrate materials for the microwave devices. Garnet single crystals like Gd$\text{}_{3}$Ga$\text{}_{5}$O$\text{}_{12}$ (GGG), Y$\text{}_{3}$Ga$\text{}_{5}$O$\text{}_{12}$ (YGG), Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$ (YAG) etc. can be potential HTSC substrate materials for microwave devices. Properties of HTSC films on some of these garnet crystals are compared here.

Źródło:

Acta Physica Polonica A; 1997, 92, 1; 147-151
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 83.

Tytuł:

Study of Thermal Annealing Effect on the Properties of Silver Thin Films Prepared by DC Magnetron Sputtering

Autorzy:

Hajakbari, F.
Ensandoust, M.

Powiązania:

https://bibliotekanauki.pl/articles/1186936.pdf

Data publikacji:

2016-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.cd
81.40.-z
68.55.-a
68.60.-p

Opis:

Silver nanoparticles have potential applications in fields of nanosicence and technology. In this work, polycrystalline silver (Ag) thin films were deposited on quartz substrates by DC magnetron sputtering method at the same deposition conditions and then, the Ag films were annealed in oxygen atmosphere for 65 min at different annealing temperatures namely 300, 400, 500 and 600°C. The crystal structure of the films was evaluated by X-ray diffraction. The atomic force microscopy and scanning electron microscopy were employed for surface morphological studies of the films. Normal-incidence transmittance over the wavelength range of 200-2500 nm was measured using a spectrophotometer. The results show that the crystallization of the films increases after annealing and that the Ag films without annealing have lowest roughness. Annealing temperature effectively influences the surface morphology of the films. Optical studies reveal that the as-deposited Ag film has metallic behavior with zero transmittance and after annealing, the transmittance increases due to the formation of silver oxide phases in the films.

Źródło:

Acta Physica Polonica A; 2016, 129, 4; 680-682
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 84.

Tytuł:

Temperature Dependence of Ag Film Roughening during Deposition on Quasicrystal and Approximant Surfaces

Autorzy:

Ünal, B.
Evans, J.
Thiel, P.

Powiązania:

https://bibliotekanauki.pl/articles/1373681.pdf

Data publikacji:

2014-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
61.44.Br
68.37.Ef
81.15.Aa

Opis:

The temperature (T) dependence of roughening as assessed by scanning tunneling microscopy is compared for growth of Ag films on an 5-fold icosahedral Al-Pd-Mn quasicrystal surface and on an ξ'-approximant. Growth on the quasicrystal corresponds to a version of the Volmer-Weber growth, but modified by quantum size effects, and also by kinetic smoothening at low T and low coverages (θ). Growth on the approximant corresponds to a version of the Stranski-Krastanov growth modified by kinetic roughening at low T and low θ. For larger θ, i.e., for thicker films, distinct behavior is observed.

Źródło:

Acta Physica Polonica A; 2014, 126, 2; 608-612
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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• na półce

Skocz do pozycji: 85.

Tytuł:

Fabrication of Antireflection Structures as a Protective Layer of Solar Cells with Nanoporous Silica Films and Nanoimprinted Moth-Eye Structure

Autorzy:

Kim, K.
Han, J.
Jang, J.
Choi, C.
Choi, S.
Kim, C.
Kye, H.
Cheong, I.

Powiązania:

https://bibliotekanauki.pl/articles/1492625.pdf

Data publikacji:

2011-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.46.-w
68.37.-d
68.55.-a
78.20.-e

Opis:

The antireflection structures are fabricated by sol-gel process as a protective layer of solar cells and by hot embossing process with anodized aluminum oxide membrane template on polycarbonate film. The optical properties and morphology of the antireflection structures are analyzed by UV-visible spectroscopy and field emission scanning electron microscopy, respectively. The total conversion efficiency of a polycrystalline Si solar cell module with the protective layer, sol-gel-derived nanoporous antireflection structure, is increased by 2.6% and 5.7% for one-side antireflection coated prismatic matt glass and both-side antireflection coated prismatic matt glass, respectively.

Źródło:

Acta Physica Polonica A; 2011, 120, 6A; A-047-A-049
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 86.

Tytuł:

DLC Coatings by $PI^{3}D:$ Low-Voltage žersus High-Voltage Biasing

Autorzy:

Ryoo, H.
Nikiforov, S.
Rim, G.
Shenderey, S.
Oh, H.
Chung, S.

Powiązania:

https://bibliotekanauki.pl/articles/1807961.pdf

Data publikacji:

2009-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

52.77.Dq
68.35.Gy
68.55.-a
78.30.-j

Opis:

Diamond-like carbon (DLC), in particular hydrogenated amorphous carbon (a-C:H) films have been formed on various conductive and dielectric materials by plasma immersion ion implantation and deposition $(PI^{3}D)$ processing. Effect of pulse voltage and other process parameters on the film properties was investigated. It was found that for conductive substrates, a low-voltage ( ≈1 kV), high repetition rate pulsing provides better overall film performance comparing to that obtained by applying higher voltages, which is also favourable for conformal treatment of 3D workpieces. However, short 1-2 μs, high-voltage 5-20 kV pulses are required for dielectric workpieces several millimeter thick. Good film adhesion was achieved by forming a Si-containing buffer layer using hexamethyldisiloxane (HMDSO) as a precursor and a low-voltage pulsing. Roughness and wettability of DLC coatings was found to be controlled by varying the bias specs and sample temperature. Very smooth films with average roughness less than 1 Å were prepared at optimised process parameters.

Źródło:

Acta Physica Polonica A; 2009, 115, 6; 1146-1148
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 87.

Tytuł:

Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering

Autorzy:

Průša, S.
Kolíbal, M.
Bábor, P.
Mach, J.
Šikola, T.

Powiązania:

https://bibliotekanauki.pl/articles/2047292.pdf

Data publikacji:

2007-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.49.Sf
81.05.Cy
68.55.-a
81.15.Ef

Opis:

In the paper the design and application of a time-of-flight low energy ion scattering instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of time-of-flight low energy ion scattering to analyse near-to-surface layers of thin films prepared both ex situ and in situ. It is shown that the broadening of peaks in time-of-flight low energy ion scattering spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.

Źródło:

Acta Physica Polonica A; 2007, 111, 3; 335-341
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 88.

Tytuł:

Kinetic Roughening and Material Optical Properties Influence on Van der Waals/Casimir Forces

Autorzy:

van Zwol, P.
Palasantzas, G.

Powiązania:

https://bibliotekanauki.pl/articles/1539079.pdf

Data publikacji:

2010-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.Jk
68.37.Ps
85.85.+j
78.68.+m
68.55.-a
47.55.nb

Opis:

Atomic force microscopy measurements and force theory calculations using the Lifshitz theory show that van der Waals/Casimir dispersive forces have a strong dependence on surface roughness and material optical properties. It is found that at separations below 100 nm the roughness effect is manifested through a strong deviation from the normal scaling of the force with separation distance. Moreover, knowledge of precise optical properties of metals is shown to be very important for accurate force predictions rather than referring to idealized defect free material models. Finally, we compare the van der Waals/Casimir forces to capillary adhesive forces in order to illustrate their significance in stiction problems.

Źródło:

Acta Physica Polonica A; 2010, 117, 2; 379-383
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 89.

Tytuł:

Characterization of Transparent and Nanocrystalline $TiO_{2}:Nd$ Thin Films Prepared by Magnetron Sputtering

Autorzy:

Domaradzki, J.
Wojcieszak, D.
Prociow, E.
Kaczmarek, D.

Powiązania:

https://bibliotekanauki.pl/articles/1807648.pdf

Data publikacji:

2009-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.82.Rx
68.55.-a
68.60.-p
68.60.Dv
78.20.-e

Opis:

In this work structural and optical properties of $TiO_{2}$ thin films doped with different amount of Nd have been outlined. The result have shown that by quantity of Nd amount in the film dense nanocrystalline or amorphous thin films were obtained.

Źródło:

Acta Physica Polonica A; 2009, 116, S; S-75-S-77
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 90.

Tytuł:

Investigation of Gold Nanolayer Properties Using X-Ray Reflectometry and Spectroscopic Ellipsometry Methods

Autorzy:

Stabrawa, I.
Banaś, D.
Dworecki, K.
Kubala-Kukuś, A.
Braziewicz, J.
Majewska, U.
Wudarczyk-Moćko, J.
Pajek, M.
Góźdź, S.

Powiązania:

https://bibliotekanauki.pl/articles/1398825.pdf

Data publikacji:

2016-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.05.cm
62.23.St
68.55.-a
81.07.-b

Opis:

X-ray reflectometry and spectroscopic ellipsometry methods were applied for determination of physical properties of gold nonolayers. The nanolayers were prepared by sputtering of gold on different substrates: borosilicate glass, polished crystalline quartz and crystalline silicon. With X-ray reflectometry technique roughness of the substrates and density, thickness and roughness of gold layers were determined. The results showed decrease in density of the gold layers due to their nanometer thickness and that roughness of the underlayer affects roughness of the gold layer. In addition, thicknesses of the gold layers measured with spectroscopic ellipsometry turned out to be in agreement, within the experimental uncertainty, with results of the X-ray reflectometry method.

Źródło:

Acta Physica Polonica A; 2016, 129, 2; 233-236
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 91.

Tytuł:

Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE

Autorzy:

Wierzbicka, A.
Żytkiewicz, Z.
Sobańska, M.
Kłosek, K.
Łusakowska, E.

Powiązania:

https://bibliotekanauki.pl/articles/1431598.pdf

Data publikacji:

2012-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.05.cp
61.05.cm
81.15.Hi
68.55.-a

Opis:

Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.

Źródło:

Acta Physica Polonica A; 2012, 121, 4; 899-902
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 92.

Tytuł:

Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method

Autorzy:

Wachnicki, Ł.
Witkowski, B.
Gierałtowska, S.
Kopalko, K.
Godlewski, M.
Guziewicz, E.

Powiązania:

https://bibliotekanauki.pl/articles/1492916.pdf

Data publikacji:

2011-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.07.Bc
82.47.Rs
68.55.-a
81.15.Aa

Opis:

Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.

Źródło:

Acta Physica Polonica A; 2011, 120, 5; 905-907
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 93.

Tytuł:

Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio

Autorzy:

Golunski, L.
Sobaszek, M.
Gardas, M.
Gnyba, M.
Bogdanowicz, R.
Ficek, M.
Plotka, P.

Powiązania:

https://bibliotekanauki.pl/articles/1402345.pdf

Data publikacji:

2015-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Gh
81.05.ug
82.80.Gk
68.55.A-

Opis:

The influence of various nanodiamond colloids used for seeding nondiamond substrates in microwave plasma enhanced chemical vapour deposition diamond process was investigated. Colloids based on deionized water, isopropanol alcohol and dimethyl sulfoxide (DMSO) were used with different grain size dispersion: 150, 400 and 35 nm, respectively. The influence of growth time was also taken into consideration and bias enhanced nucleation. Microcrystalline diamond films were deposited on the seeded substrates in microwave plasma chemical vapour deposition using hydrogen-methane gas mixture. Seeding efficiency was investigated by means of scanning electron microscopy and Raman spectroscopy. Authors defined the new factor called as diamond ideality factor (di) which can give a quick estimation of quality of film and relative sp³ content. Few main peaks were identified at the following wave numbers: diamond sp³ peak 1332 $cm^{-1}$, D band peak 1355 $cm^{-1}$, C-H bending peak 1440-1480 $cm^{-1}$ and G band peak 1560 $cm^{-1}$. The best di was achieved for DMSO based colloid in all cases. The application of bias enhanced nucleation increases the diamond crystals size and the sp³/sp² ratio.

Źródło:

Acta Physica Polonica A; 2015, 128, 1; 136-140
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 94.

Tytuł:

Numerical Modelling of Adsorption of Metallic Particles on Graphite Substrate Via Molecular Dynamics Simulation

Autorzy:

Rafii-Tabar, H.

Powiązania:

https://bibliotekanauki.pl/articles/1968758.pdf

Data publikacji:

1998-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

02.60.Cb
07.05.Tp
68.55.-a
81.05.Tp

Opis:

A computer-based numerical modelling of the adsorption process of gas phase metallic particles on the surface of a graphite substrate has been performed via the application of molecular dynamics simulation method. The simulation relates to an extensive STM-based experiment performed in this field, and reproduces part of the experimental results. Both two-body and many-body inter-atomic potentials have been employed. A Morse-type potential describing the metal-carbon interactions at the interface was specifically formulated for this modelling. Intercalation of silver in graphite has been observed as well as the correct alignments of monomers, dimers and two-dimensional islands on the surface.

Źródło:

Acta Physica Polonica A; 1998, 93, 2; 343-354
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 95.

Tytuł:

Raman Scattering from ZnSe Nanolayers

Autorzy:

Nesheva, D.
Šćepanović, M.
Aškrabić, S.
Levi, Z.
Bineva, I.
Popović, Z.

Powiązania:

https://bibliotekanauki.pl/articles/1807824.pdf

Data publikacji:

2009-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Ef
81.05.Dz
78.30.-j
68.55.-a

Opis:

A series of ZnSe single layers having thickness between 30 nm and 1 μm was deposited on c-Si and glass substrates at room substrate temperature. Thermal evaporation of ZnSe powder in high vacuum has been applied. Moreover, $SiO_x$/ZnSe periodic multilayers prepared by the same deposition technique and having ZnSe layer thickness of 2 and 4 nm have been studied. Raman spectra were measured at 295 K, using the 442 nm line of a He-Cd laser as well as different lines of the $Ar^+$ or $Ar^+//Kr^+$ lasers. The observed Raman features have been related to multiple optical phonon (1LO to 4LO) light scattering and connected with the existence of randomly oriented crystalline ZnSe grains in both ZnSe single layers and ZnSe layers of the multilayers. Relatively large line width ( ≈ 15 $cm^{-1}$) of the 1LO band has been observed and related to lattice distortion in the crystalline grains and existence of amorphous phase in the layers thinner than 100 nm. The Raman spectra measured on both ZnSe single layers and $SiO_x$/ZnSe multilayers using the 488 nm line with a gradually increased laser beam power indicate an increased crystallinity at high irradiation levels.

Źródło:

Acta Physica Polonica A; 2009, 116, 1; 75-77
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 96.

Tytuł:

Effect of Annealed (0001) α-$Al_2O_3$ Surfaces on Heteroepitaxial Growth of Silver Nanoparticles

Autorzy:

Al-Mohammad, A.

Powiązania:

https://bibliotekanauki.pl/articles/1808108.pdf

Data publikacji:

2009-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
81.15.Aa
61.05.jh
61.46.Df

Opis:

The effect of annealed (0001) α -$Al_2O_3$ surfaces on heteroepitaxial growth of silver nanoparticles were analysed by reflection high-energy electron diffraction, transmission electron microscope and selected area electron diffraction. Ag nanoparticles were deposited on 1× 1 stoichiometric and reconstructed (111)Al//(0001) α -$Al_2O_3$ with the Knudsen cell. The maximum cluster density method and the Lifethenz theory of Van der Waals energy were used to investigate the Ag//(0001)α -$Al_2O_3$ interface parameters. The growth modes, lattice parameters, nanoparticle forms and sizes are strongly dependent on the substrate surface structures. Initially, three-dimensional islands of Ag nanoparticles grow on both kinds of surfaces with partial hexagonal shapes. Ag nanoparticles on stoichiometric surface create the (111)Ag//(0001)α -$Al_2O_3$ interface without any preferred epitaxial direction. On this surface, Gaussian distribution is characteristic of an atom-by-atom growth mode with density of Ag nanoparticles lower than saturation density while a coalescence growth mode appears due to binary collisions between Ag nanoparticles accompanied by a liquid-like behaviour after saturation density. In case of reconstruction substrates, the epitaxial relationships between Ag nanoparticles and the surface are formed (111)Ag//(0001)α -$Al_2O_3$, 〈01\bar(1)〉Ag//[12\bar(3)0]α -$Al_2O_3$ or 〈01\bar(1)〉Ag//[1\bar(1)00]α-$Al_2O_3$. The Ag nanoparticles make rotation with angles between ± 6° around the epitaxial orientations 〈1\bar(1)00〉 or 〈12\bar(3)0〉. Only the atom-by-atom growth mode were found at all Ag nanoparticles growth processes.

Źródło:

Acta Physica Polonica A; 2009, 115, 3; 679-684
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 97.

Tytuł:

Structural Characterization of $La_{1-x}Sr_xCoO_3$ Thin Films Deposited by Pulsed Electron Deposition Method

Autorzy:

Cieniek, Ł.
Kopia, A.
Cyza, A.
Kowalski, K.
Kusiński, J.

Powiązania:

https://bibliotekanauki.pl/articles/1398370.pdf

Data publikacji:

2016-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.-z
81.10.Bk
81.07.Bc
68.55.-a
68.55.J-
68.55.Nq
68.37.-d

Opis:

The aim of the presented research was to investigate the influence of strontium dopant on the structure and composition of $La_{1-x}Sr_{x}CoO_3$ (x=0, 0.1, 0.2) perovskite thin films. Pure and Sr doped LaCoO₃ thin films were grown by pulsed electron deposition technique on crystalline epi-polished Si/MgO substrates. Numerous analytical techniques (scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction) were applied to characterize their phase/chemical composition, structure and surface morphology. X-ray diffraction analysis showed the presence of pure LaCoO₃ perovskite phase in the undoped thin film. For Sr doped thin films $La_{0.8}Sr_{0.2}CoO_3$ (x=0.2), $La_{0.9}Sr_{0.1}CoO_3$ (x=0.1) small contents of La₂ O₃ and LaSrCoO₄ phases were noticed. The crystallite sizes, calculated from the Williamson-Hall plots, were about 18 nm for all analyzed films. According to scanning electron microscopy/atomic force microscopy observations, obtained thin films were free from defects and cracks. Atomic force microscopy (tapping mode) analysis revealed the differences in the shape and quantity of surface crystallites for all thin films as a result of Sr doping and different deposition parameters. Atomic force microscopy technique also allowed measurement of roughness parameters for analyzed samples. X-ray photoelectron spectroscopy analyses of chemical states of elements of thin films showed that their chemical state was stable across the film thickness and even at the interface with the MgO substrate. X-ray photoelectron spectroscopy analysis also allowed to evaluate chemical states and atomic concentration of La, Co, and Sr elements within cross-sections of deposited thin films.

Źródło:

Acta Physica Polonica A; 2016, 130, 4; 1121-1123
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 98.

Tytuł:

Study of Structure Densification in $TiO_2$ Coatings Prepared by Magnetron Sputtering under Low Pressure of Oxygen Plasma Discharge

Autorzy:

Domaradzki, J.
Kaczmarek, D.
Prociow, E.
Radzimski, Z.

Powiązania:

https://bibliotekanauki.pl/articles/1503889.pdf

Data publikacji:

2011-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Cd
81.15.-z
68.55.-a
81.15.Aa

Opis:

Current work presents results of studies on structural and optical properties of the $TiO_2$ thin films prepared by reactive magnetron sputtering. Oxide thin films were deposited from metallic targets using oxygen gas only instead of usually used mixture of Ar-$O_2$. Additionally, an increased amplitude of unipolar pulses powering the magnetron has been applied. It is shown that all prepared coatings were stoichiometric and by changing only the discharge voltage it is possible to influence the resulting structural phase and optical properties of prepared thin films. Depending on conditions of magnetron powering, $TiO_2$ thin films had either the anatase structure with refraction index n = 2.1 (λ = 500 nm) or a high temperature stable rutile structure with n = 2.52 (λ = 500 nm).

Źródło:

Acta Physica Polonica A; 2011, 120, 1; 49-52
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 99.

Tytuł:

Layered Garnet Films for Applications in Atomic Traps

Autorzy:

Berzhansky, V.
Vishnevskii, V.
Milyukova, H.
Nedviga, A.
Nesteruk, A.
Danishevskaya, H.

Powiązania:

https://bibliotekanauki.pl/articles/1534188.pdf

Data publikacji:

2010-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

37.10.Gh
61.72.Ff
68.55.-a
75.50.Ss

Opis:

Layered high-coercive garnet films characterized by a couple of parameters very suitable for creating reconfigurable magnetic atomic traps with new properties are investigated. Non-uniform distribution of inner stresses and chemical composition stratification obtained in the films can be increased technologically to form sublayers for independent local switching by means of thermomagnetic recording. It makes possible to provide more than two magnetic states and create special types of atomic traps with additional "states of freedom". The experience in the films synthesis and experimental thermomagnetic recording for multilevel traps modeling is described.

Źródło:

Acta Physica Polonica A; 2010, 118, 5; 864-866
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 100.

Tytuł:

Morphology and Optical Properties of Laser-Assisted Chemical Vapour Deposited GaN

Autorzy:

Goldys, E. M.
Godlewski, M.
Tansley, T. L.

Powiązania:

https://bibliotekanauki.pl/articles/1969082.pdf

Data publikacji:

1998-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.-a
81.15.Gh
61.16.Ch
78.30.-j

Opis:

Properties of GaN epilayers grown by laser-assisted chemical vapour deposition are discussed. Good crystallinity and surface morphology of the films is demonstrated. Micro-Raman spectra are explained by scattering by small, randomly oriented cubic phase units present in the GaN film.

Źródło:

Acta Physica Polonica A; 1998, 94, 2; 331-335
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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