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Tytuł:
Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs
Autorzy:
Buda, B.
Leifeld, O.
Völlmeke, S.
Schmilgus, F.
As, D. J.
Schikora, D.
Lischka, K.
Powiązania:
https://bibliotekanauki.pl/articles/1952466.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
We investigated the GaAs/ZnSe interface and the influence of the Ga$\text{}_{2}$Se$\text{}_{3}$ formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga$\text{}_{2}$Se$\text{}_{3}$ at the surface was observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 997-1001
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Surface Orientation of the Substrate on the Saturation State of Solution during Liquid Phase Heteroepitaxy
Autorzy:
Olchowik, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1921670.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Orientation effects during heteroepitaxy appear at the stage of the layer formation and also during the isothermal contact of the multicomponent solution with the binary substrate. In the paper, the analysis of the InP and GaP substrate orientation on the state of liquid phase was carried out. The analysis based on the in situ comparative determination of the contact supersaturation of the Ga-In-P-As and Ga-In-P solutions. It was found that the contact supersaturation of the alloy was connected with the coupling mechanism of the interface with the binary substrate.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 745-748
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films
Autorzy:
Benzhour, K.
Szatkowski, J.
Rozpłoch, F.
Stec, K.
Powiązania:
https://bibliotekanauki.pl/articles/1535896.pdf
Data publikacji:
2010-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.A-
Opis:
Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.
Źródło:
Acta Physica Polonica A; 2010, 118, 3; 447-449
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomic Force Microscopy Studies of the Surface Scale Formed During Oxidation of Incoloy Ma956
Autorzy:
Czyrska-Filemonowicz, A.
Wasilkowska, A.
Szot, K.
Quadakkers, W. J.
Powiązania:
https://bibliotekanauki.pl/articles/1968770.pdf
Data publikacji:
1998-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
The formation of thin oxide films on {111} and {110} single crystal specimens of Fe20Cr5Al based oxide dispersion strengthened alloy during the early stages of oxidation up to 1000°C was investigated by atomic force microscopy. The atomic force microscopy results revealed the crystalline character of a corrosion layer. The alumina scale morphology (height and grain size of crystallites) was only slightly dependent on the crystallographic texture of the underlying bulk material. The results show that atomic force microscopy has the potential to study surface structure of oxide layers in the initial stages of an oxidation process.
Źródło:
Acta Physica Polonica A; 1998, 93, 2; 399-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of $Cu_2ZnSnS_4$ Thin Films
Autorzy:
Sun, Y.
Yao, B.
Meng, X.
Wang, D.
Long, D.
Hua, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1205220.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Amorphous Cu-Zn-Sn-S precursor films were prepared by sol-gel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A $Cu_2ZnSnS_4$ film with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200°C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the $Cu_2ZnSnS_4$. However, when the precursor films were annealed with sulfur powder together at temperatures between 360 and 480°C, the CZTS film containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480°C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 751-756
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calcul des contraintes dans une couche mince deposee sur un substrat
Autorzy:
Bertholon, G.
Dupuy, C.
Surry, C.
Redon, R.
Zahouani, H.
Powiązania:
https://bibliotekanauki.pl/articles/1929268.pdf
Data publikacji:
1993-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
CALCULATIONS OF THE CONSTRAINTS IN A THIN FILM DEPOSITED ON THE SUBSTRATE: The aim of the present paper is to give simple calculations of the constraints in a thin film deposited on the substrate. The thin film can be obtained by the recrystallization of the surface. It is considered in relation to its substrate, where the force is linearly proportional to the surface area of the film. On the other hand, it is considered to be under the action of a force related to the thermic and compressional constraints. The initial and final boundary conditions in the linearized model play an essential role in the model adopted.
Źródło:
Acta Physica Polonica A; 1993, 83, 5; 581-585
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial Growths of II-VI Compounds on (110) Substrates
Autorzy:
Cywiński, G.
Wojtowicz, T.
Kopalko, K.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1969044.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 281-284
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Lattice Strains in Layered Structures Containing Porous Silicon
Autorzy:
Wierzchowski, W.
Wieteska, K.
Graeff, W.
Brzozowski, A.
Nossarzewska-Orłowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/2035501.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 283-288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Composition of Surfaces and Interfaces with the Use of Auger Electron Spectroscopy
Autorzy:
Mróz, S.
Powiązania:
https://bibliotekanauki.pl/articles/1945166.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
Processes leading to the Auger electron emission from the sample bombarded with a primary electron beam are discussed. It is shown that every element has its characteristic spectrum of Auger lines, and that owing to a small inelastic mean free path of Auger electrons, information obtained from Auger electron spectroscopy concerns the composition of surface layer of 0.5-1 nm thick. Experimental methods of Auger electron spectroscopy are presented together with problems connected with separation of Auger electrons from the secondary electron spectrum. Advantages and disadvantages of some electron energy spectrometers are considered. Methods of quantitative Auger analysis of homogeneous samples with the use of standards and catalogues of Auger spectra are presented. The role of matrix corrections in quantitative Auger analysis is discussed. Problems arising in Auger analysis of insulating samples are considered and methods of discharging of such samples are presented. Depth profiling of inhomogeneous samples by Auger electron spectroscopy with ion bombardment sputtering is described, and possibilities and limitations of this procedure are discussed. Principles of scanning Auger microscopy are presented. Factors determining the lateral resolution are discussed. Possibilities of Auger electron spectroscopy and scanning Auger microscopy in analysis of composition of grain boundaries exposed by in situ fracture are presented and discussed. Possibilities and limitations of Auger electron spectroscopy in the investigation of solid state surfaces are summarized.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 183-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Processes Occurring during Silver Adsorption on Copper and Nickel at Elevated Temperatures
Autorzy:
Wodecki, J.
Mróz, S.
Powiązania:
https://bibliotekanauki.pl/articles/1943977.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
A flux of silver atoms reevaporated from the copper and nickel targets during deposition of silver was measured as a function of the target temperature during spontaneous cooling from 1150 K and during heating the target with deposited several silver monolayers from room temperature to 1150 K. Differences in the measured dependences for both targets give the evidence of competition between reevaporation of silver atoms from the copper surface and their dissolution in the copper bulk and are in accordance with the lack of silver dissolution in nickel. Thus, the role of silver dissolution in the copper surface layer during silver adsorption at elevated temperatures is experimentally evidenced. Activation energy for silver dissolution in the copper substrate was estimated to be equal to 1.7-2.4 eV/atom.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 69-74
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth
Autorzy:
Berger, H.
Möck, P.
Rosner, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929560.pdf
Data publikacji:
1993-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.65.+g
Opis:
The effect of epitaxial misorientation on substrates having vicinal surfaces is studied using two simple geometrical models. The misorientations in two epitaxial systems, single layers and superlattices, can be partially explained by means of these models. Furthermore, the fundamentals of a new description tool for orientation relationships of epitaxial systems are outlined briefly, and two examples of application are given.
Źródło:
Acta Physica Polonica A; 1993, 84, 2; 279-286
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Very Thin Silver Layer Growth on the Cu(1II) Face at Different Temperatures
Autorzy:
Mróz, S.
Stachnik, B.
Powiązania:
https://bibliotekanauki.pl/articles/1892480.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
Measurements of work function changes (ΔΦ) and Auger Electron Spectroscopy were used for investigation of very thin silver layer adsorption on the (111) face of copper crystal. At room temperature the layer-by-layer growth was observed while at temperatures above 850 K ΔΦ and the Auger peak height kinetics indicated the presence of silver diffusion to the surface layer of the copper sample.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 233-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Evolution of Near-Surface Layers in NiTi Alloy Caused by an Ion Implantation
Autorzy:
Swiatek, Z.
Michalec, M.
Levintant-Zayonts, N.
Bonarski, J.
Budziak, A.
Bonchyk, O.
Savitskij, G.
Powiązania:
https://bibliotekanauki.pl/articles/1503940.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.49.Uv
Opis:
The results of X-ray diffraction studies on structural changes in the near-surface layers in the NiTi alloy caused by nitrogen-ion implantation with the energy E = 50 keV and the fluence D = $10^{18} cm^{-2}$ are presented. X-ray diffractometry, using the Philips diffractometer type X'Pert in the Bragg-Brentano geometry, was used to identify the phase composition of NiTi alloy. For layer by layer analysis of structural changes in the near-surface layers, the D8 Discover Bruker diffractometer with polycapilar beam optics was used. The ion-implanted NiTi alloy in the near-surface layer exhibits five phases: the dominating austenite phase, two martensitic phases and a small amount of the $Ni_4Ti_3$ and NTi phases. Along with the decreasing thickness of the near-surface layer investigated in material an increasing fraction of the $Ni_4Ti_3$ and NTi phases was observed. With the thickness of this layer about 340 nm, besides still existing the austenite, $Ni_4Ti_3$ and NTi phases, only one martensitic phase is present in the alloy. Further decrease of the thickness of the near-surface layer to about 170 nm leads to the increasing fraction of the $Ni_4Ti_3$ and NTi phases.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 75-78
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Direct Laser Interference Patterning: Theory and Application
Autorzy:
Zabila, Y.
Perzanowski, M.
Dobrowolska, A.
Kąc, M.
Polit, A.
Marszałek, M.
Powiązania:
https://bibliotekanauki.pl/articles/1810273.pdf
Data publikacji:
2009-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.65.Ac
Opis:
We simulated and experimentally investigated the formation of periodic structures generated by multibeam interference patterning. The simulations at the different setup geometry show that resulting interference pattern is quasi-periodical. The calculated patterns show that the symmetries of the interference maxima depend mostly on the angles of incidence and that a wide variety of patterns can be obtained. Because of the difficulty in aligning four beams sufficiently well to avoid secondary periodicities, for testing we used a three-beam interference configuration. Atomic force microscopy images showed good correspondence between the experimental and simulated interference image, with flat islands which correspond to the destructive interference and narrow channels which correspond to the constructive interference fringes.
Źródło:
Acta Physica Polonica A; 2009, 115, 2; 591-593
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microstructure of the Pulsed Laser Deposited LaSrCuO Films
Autorzy:
Cieplak, M. Z.
Abal'oshev, A.
Zaytseva, I.
Berkowski, M.
Guha, S.
Wu, Q.
Powiązania:
https://bibliotekanauki.pl/articles/2046751.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.55.Jk
68.37.Ps
Opis:
The X-ray diffraction and atomic force microscopy are used to examine the microstructure of La$\text{}_{1.85}$Sr$\text{}_{0.15}$CuO$\text{}_{4}$ films grown by pulsed laser deposition on LaSrAlO$\text{}_{4}$ substrates. The films grow with different degrees of built-in strain, ranging from a large compressive to a large tensile in-plain strain. The tensile strain cannot be attributed to a substrate-related strain. The possible origins of the tensile strain are discussed.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 573-576
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures
Autorzy:
Jezierski, K.
Sitarek, P.
Misiewicz, J.
Panek, M.
Ściana, B.
Korbutowicz, R.
Tłaczała, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933782.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
71.35.+z
Opis:
Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E$\text{}_{0}$ critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 751-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Misiuk, A.
Barcz, A.
Bryja, L.
Popov, V. P.
Powiązania:
https://bibliotekanauki.pl/articles/2035493.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
61.46.+w
Opis:
The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10$\text{}^{16}$ cm$\text{}^{-2}$ were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Characterisation of Fe/Ce Multilayer
Autorzy:
Dawczak-Dębicki, H.
Marczyńska, A.
Pacanowski, S.
Szymański, B.
Majchrzycki, Ł.
Kowalski, W.
Grembowski, W.
Bilski, T.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1030530.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
68.55.-a
Opis:
Ce/Fe multilayer (ML) with constant Fe (2 nm) and Ce (4.5 nm) sublayer thicknesses was prepared onto naturally oxidised Si(100) substrate using magnetron sputtering. Chemical purity of the sublayers was revealed in-situ by X-ray photoelectron spectroscopy (XPS) measurements. The structure of the sample was studied by standard low- and high-angle X-ray diffraction (XRD). Surface morphology of the ML was examined by atomic force microscopy. Magnetic properties of the sample was studied in the temperature range between 5 and 350 K using a vibrating sample magnetometer in a magnetic field up to 9 T. The hysteresis loops were measured in field perpendicular and parallel to the substrate. Furthermore, hydrogen absorption at a pressure of about 1000 mbar was studied at room temperature (RT) in Pd covered ML using four-point resistivity measurements. The solid state amorphisation reaction have been confirmed by XRD and magnetic measurements of the Ce/Fe ML. The absence of satellite peaks in the low - angle XRD pattern revealed no artificial layered structure. The above results show that interdiffusion of cerium and iron atoms is extremely fast at RT.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 628-631
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Exchange Coupling in Fe/Nb/Fe/Pd Layered Structures using Hydrogen
Autorzy:
Wachowiak, M.
Marczyńska, A.
Dawczak-Dębicki, H.
Pugaczowa-Michalska, M.
Pacanowski, S.
Majchrzycki, Ł.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1030744.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
68.55.-a
Opis:
Fe/Nb/Fe trilayers were prepared at room temperature using UHV magnetron sputtering. The interlayer exchange coupling energy was determined from a shift of the minor hysteresis loop from the origin. Results showed clear antiferromagnetic (AF) coupling maxima near ım6 and 9 monolayers of Nb spacer. Calculations of the interlayer exchange coupling energy were carried out using ab-initio method with localized spin density approximations of exchange-correlation potential. The experimental results were in good agreement with ab-initio calculations. Furthermore, the position of the AF peaks and coupling energy values could be modified using hydrogen.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 609-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interlayer Exchange Coupling in Nb/Fe Multilayers
Autorzy:
Marczyńska, A.
Pugaczowa-Michalska, M.
Szymański, B.
Majchrzycki, Ł.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1030764.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
68.55.-a
Opis:
The (110) oriented Nb-Fe multilayers (MLs) with constant Fe and variable Nb sublayer thicknesses were prepared at room temperature using UHV magnetron sputtering. The artificial periodicity was revealed by intense satellite peaks in the low- and high-angle X-ray diffraction patterns. Magnetic hysteresis loop measurements at 5 K revealed antiferromagnetic (AF) exchange coupling of the Fe sublayers for Nb spacer thickness of about 3 monolayers. The corresponding AF coupling energy is equal to about -1.36 mJ/m². The Nb spacer thickness corresponding to the position of the AF peak is in good agreement with ab-initio calculations within localized spin density approximations of exchange-correlation potential.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 605-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Natural xidation of thin Fe films on V buffer layer
Autorzy:
Dawczak-Dębicki, H.
Marczyńska, A.
Rogowska, A.
Wachowiak, M.
Nowicki, M.
Pacanowski, S.
Jabłoński, B.
Kowalski, W.
Grembowski, J.
Czajka, R.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1055062.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
68.55.-a
Opis:
We have studied oxidation kinetics of Fe thin film under atmospheric conditions using the fact that metallic iron is a ferromagnet but ultrathin natural iron oxides are approximately nonmagnetic at room temperature. As a consequence, oxidation is associated with a loss in total Fe magnetic moment. Results show that the sample with an initial Fe thickness equal to 10 nm oxidize relatively fast (time constant τ=0.05 day), whereby a constant amount of 2.5 nm of metal is transformed into oxides. For lower iron initial thickness (d_{i}=4 nm) the time constant for oxidation significantly increases reaching a value of 2 days. Furthermore, X-ray photoelectron spectroscopy studies performed after 144 days of oxidation revealed formation of hematite (α-Fe₂O₃) thin film on the metallic rest of iron.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1272-1276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Controllability Analysis of Reactive Magnetron Sputtering Process
Autorzy:
Ahmad, Z.
Abdallah, B.
Powiązania:
https://bibliotekanauki.pl/articles/1400186.pdf
Data publikacji:
2013-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
02.30.Yy
68.55.-a
Opis:
Reactive magnetron sputtering deposition is one of the major established techniques for deposition of both metallic and nonmetallic thin films on various substrates; it is a very nonlinear process, and exhibits hysteresis behavior with respect to the reactive gas flow. This nonlinearity is characterized by a sudden change in sputtering rate and fraction of compound formation. Most of the problems encountered in the preparation of compound films by reactive sputtering are due to the hysteresis effect. The industrial applications request high rate deposition processes. To meet this demand, it is necessary to have a very good control system of such processes and to ensure a stable sputtering in the transition mode by using closed loop reactive gas control. Therefore, the controllability analysis is an important issue. The aim of this paper is to study the controllability of reactive sputtering process, especially in the transition region; a simple mathematical model based on Berg's original proposal is used. Analysis results show that the reactive magnetron sputtering process shows unstable behavior in the transition region and it is a controllable process.
Źródło:
Acta Physica Polonica A; 2013, 123, 1; 3-6
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MOCVD of High Quality LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ Thin Films
Autorzy:
Samoylenkov, S. V.
Gorbenko, O. Yu.
Graboy, I. E.
Kaul, A. R.
Svetchnikov, V. L.
Zandbergen, H. W.
Powiązania:
https://bibliotekanauki.pl/articles/1964530.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.55.-a
Opis:
Epitaxial LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ films were prepared by flash evaporation MOCVD on LaAlO$\text{}_{3}$, SrTiO$\text{}_{3}$, LaSrGaO$\text{}_{4}$ and ZrO$\text{}_{2}$(Y$\text{}_{2}$O$\text{}_{3}$) single crystalline substrates. The highest T$\text{}_{c}$ and j$\text{}_{c}$ (77 K, 100 Oe) values were 89 K, 2.7×10$\text{}^{6}$ A/cm$\text{}^{2}$ (LaAlO$\text{}_{3}$) and 88 K, 1.5×10$\text{}^{6}$ A/cm$\text{}^{2}$ (SrTiO$\text{}_{3}$) respectively. The occurrence of secondary phases inclusions in LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ films correlates with the possibility of epitaxial relations with the film matrix or the substrate.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 243-247
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of In Situ Prepared Nanocrystalline Fe-Ni-Ti Alloy Thin Films
Autorzy:
Pacanowski, S.
Skoryna, J.
Marczyńska, A.
Skoryna, D.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1386482.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
68.55.-a
Opis:
In this contribution we study experimentally the electronic properties of nanocrystalline Fe-Ni-Ti alloy thin films using X-ray photoelectron spectroscopy. The structure of the samples has been studied by X-ray diffraction. Their bulk chemical compositions were measured using X-ray fluorescence method. The surface chemical composition and the cleanness of all samples were checked in situ, immediately after deposition, transferring the samples to an UHV analysis chamber equipped with X-ray photoelectron spectroscopy. X-ray diffraction studies revealed the formation of nanocrystalline Fe-Ni-Ti alloy thin films at a substrate temperature of about 293 K. In situ X-ray photoelectron spectroscopy studies showed that the valence bands of nanocrystalline samples are broader compared to those measured for the polycrystalline bulk alloys. Such modifications of the valence bands of the nanocrystalline alloy thin films could influence on their hydrogenation properties.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 436-438
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Structural Characterisation of V/Fe Multilayers
Autorzy:
Marczyńska, A.
Skoryna, J.
Szymański, B.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1387036.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
68.55.-a
Opis:
The (110) oriented V/Fe multilayers were prepared at room temperature using UHV magnetron sputtering. As a substrate we have used Si(100) wafers with an oxidised surface. The surface chemical composition and the cleanness of all layers was checked in situ, immediately after deposition, transferring the samples to an UHV analysis chamber equipped with X-ray photoelectron spectroscopy. The structure of the multilayers has been studied ex situ by low- and high-angle X-ray diffraction. The modulation wavelength was determined from the spacing between satellite peaks in the X-ray diffraction patterns. Results were consistent with the values obtained from total thickness divided by the number of repetitions. Growth of the Fe (V) on 1.6 nm V (Fe) underlayer was studied by succesive deposition and X-ray photoelectron spectroscopy measurements starting from 0.2 nm of Fe (V) layer, respectively. From the exponential variation of the X-ray photoelectron spectroscopy Fe 2p and V 2p integral intensities with increasing layer thickness we conclude that the Fe and V sublayers grow homogeneously in the planar mode.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 552-554
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-25 z 112

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