Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "78.55.-m" wg kryterium: Wszystkie pola

  Lista filtrów
Wyrównaj
Wyświetlanie 1-50 z 351
Tytuł:
Factors Affecting Luminescence Intensity of Lanthanide Ions. Analytical Applications of Lanthanide Luminescence in Solution
Autorzy:
Lis, S.
Powiązania:
https://bibliotekanauki.pl/articles/1929808.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
Opis:
The factors which efficiently reduce nonradiative energy degradation of the lanthanide ion fluorescence are described. The most sensitive systems in spectrofluorimetric determination of trace amounts of lanthanide ions based on the complex formation, intramolecular energy transfer and mixed complexes with synergic agents in a liquid phase, are presented. Detection limits of highly sensitive systems obtained with the use of conventional and laser-excited spectrofluorimetry for Sm(III), Eu(III), Tb(III) and Dy(III) are compared.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 1003-1010
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Free Exciton Capture Cross Section of Si:Al by Photoluminescence
Autorzy:
Schramm, G.
Powiązania:
https://bibliotekanauki.pl/articles/1887812.pdf
Data publikacji:
1991-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
Opis:
The free excitons capture rate and capture cross-section of the neutral Al atom in silicon were determined at 4.2 K. The obtained values are of the same order of magnitude as reported values of other shallow dopants.
Źródło:
Acta Physica Polonica A; 1991, 79, 6; 869-872
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Luminescence of $CdWO_4$:Tb,Li Crystals under Synchrotron Excitation at 10 K
Autorzy:
Novosad, S.
Kostyk, L.
Novosad, I.
Luchechko, A.
Stryganyuk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1418270.pdf
Data publikacji:
2012-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
Opis:
The luminescent properties of $CdWO_4$:Tb,Li crystals have been investigated at 10 K in the region 4-25 eV using synchrotron excitation. It is shown that besides the intrinsic matrix luminescence the number emission lines due to electron f-f-transitions in $Tb^{3+}$ ions are efficiently excited at near-edge region of the fundamental absorption ($E_\text{exc}$ = 4.1 eV). The weak recombination luminescence of terbium impurity on the background of intensive matrix luminescence is observed under excitation in the region of fundamental absorption ($E_\text{exc}$ = 5.4 and 13.8 eV). It is shown that the luminescence spectrum of the matrix is a superposition of three elementary bands 2.07, 2.47, and 2.73 eV. The nature of emission bands is discussed.
Źródło:
Acta Physica Polonica A; 2012, 122, 4; 717-720
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative Spectroscopic Study of the Dy$\text{}^{3+}$ Doped Double Chloride and Double Fluoride Crystals for Telecommunication Amplifiers and IR Lasers
Autorzy:
Tkachuk, A.
Ivanova, S.
Isaenko, L.
Yelisseyev, A.
Payne, Steve
Solarz, R.
Nostrand, M.
Page, R.
Payne, Stephen
Powiązania:
https://bibliotekanauki.pl/articles/1995823.pdf
Data publikacji:
1999-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
Opis:
In this work we studied spectroscopic characteristics of potassium-lead double-chloride, and lithium-yttrium double-fluoride crystals doped with dysprosium. Objects of research were KPb$\text{}_{2}$Cl$\text{}_{5}$:Dy$\text{}^{3+}$, and LiYF$\text{}_{4}$ (YLF):Dy$\text{}^{3+}$ crystals grown by the Bridgman-Stockbarger technique. We obtained the effective distribution coefficients K$\text{}_{Dy}$=0.95 for LiYF$\text{}_{4}$ :Dy$\text{}^{3+}$, and K$\text{}_{Dy}$=1 for KPb$\text{}_{2}$Cl$\text{}_{5}$:Dy$\text{}^{3+}$. Optical spectra were studied, intensity parameters were determined by the Judd-Ofelt method, and radiative probabilities and branching ratio were calculated. The conclusion was made that the studied crystals can be considered as promising new active media for laser diode pumped solid state lasers. The YLF:Dy$\text{}^{3+}$ crystals are perspective for laser action near 3 mm, and the KPb$\text{}_{2}$Cl$\text{}_{5}$ :Dy$\text{}^{3+}$ for multiwavelength IR lasers, and for 1.3 mm laser diode pumped telecommunication amplifiers.
Źródło:
Acta Physica Polonica A; 1999, 95, 3; 381-394
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared-to-Visible Upconversion in Erbium Pentaphosphate
Autorzy:
Kaczmarek, F.
Balicki, M.
Karolczak, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929357.pdf
Data publikacji:
1993-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Hx
Opis:
Infrared-to-visible upconversion has been observed by many authors in a variety of rare-earth-doped crystals. This paper reports the study of the up-conversion found in stoichiometric erbium pentaphosphate, ErP$\text{}_{5}$O$\text{}_{1}$4. Strong green fluorescence was observed upon pumping the crystal with a cw diode laser at a wavelength of about 800 nm.
Źródło:
Acta Physica Polonica A; 1993, 83, 6; 831-836
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Blue Photoluminescent Band in ZnS Crystals
Autorzy:
Liem, N. Q.
Quang, V. X.
Thanh, D. X.
Powiązania:
https://bibliotekanauki.pl/articles/1931824.pdf
Data publikacji:
1994-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Et
Opis:
The zinc sulphide crystals as-grown and heat treated in different atmospheres, have been studied by photoluminescence technique. A blue emission band (IB) peaking at 2.91 eV has been identified in the mentioned crystals. Parameters of the IB band such as peak energy, half width of spectrum, lifetime of photoluminescence as well as a superlinearly excitation intensity dependence of the luminescence have been determined. A model of the IB transition is proposed to explain the properties and features of IB luminescence.
Źródło:
Acta Physica Polonica A; 1994, 86, 6; 979-985
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Transfer, Fluorescence and Scintillation Processes in Cerium-Doped RE$\text{}^{3+}$ AlO$\text{}_{3}$ Fast Scintillators
Autorzy:
Mares, J. A.
Nikl, M.
Powiązania:
https://bibliotekanauki.pl/articles/1945462.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.60.-b
Opis:
Modern applications of scintillators in medical imaging of human body (Positron Emission Tomography - PET scanning, γ-cameras and other X-ray tomographies) require improved or even quite new scintillators which should be characterized by (i) fast response, (ii) high density and (iii) high light yield. At present time new scintillating crystals are investigated, mainly those having perovskite lattice structure of the formula RE$\text{}^{3+}$ AlO$\text{}_{3}$:Ce where RE $\text{}^{3+}$ = Y$\text{}^{3+}$, Gd$\text{}^{3+}$ and Lu$\text{}^{3+}$. Here, we will present the newest data with summarising properties of these types of scintillators including the mixed ones. Energy transfer processes between Ce$\text{}^{3+}$ main centres and Ce$\text{}^{3+}$ multisites are discussed together with their mechanisms including processes between Ce $\text{}^{3+}$ and Gd$\text{}^{3+}$ ions. Finally, the characteristic properties of scintillating crystals based on perovskite structure are reviewed.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 45-54
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of N$\text{}_{3}^{-}$ Ions on Chemiluminescence of the Eu(II)/Eu(III)-H$\text{}_{2}$O$\text{}_{2}$ System
Autorzy:
Elbanowski, M.
Staninski, K.
Kaczmarek, M.
Lis, S.
Powiązania:
https://bibliotekanauki.pl/articles/1945476.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Ps
78.55.-m
Opis:
The basic system of chemiluminescence investigations of relevant biological and inorganic compounds consists of Eu(II)/Eu(III) - H$\text{}_{2}$O$\text{}_{2}$. In these studies the increase in Eu(III) ion emission intensity usually results from an effective complexation reaction. In the present study, the N$\text{}_{3}^{-}$ ions are used as a ligand. The increase in the chemiluminescence intensity of the Eu(III) ion, the pH influence (in the range of 4.5-7.5) on the chemiluminescence intensity of the Eu(III) ion, as well as the quenching of the $\text{}^{5}$D$\text{}_{0}$ excited state of the Eu(III) ion are observed due to N$\text{}_{3}^{-}$ complexation. Taking into account the well-known Fenton system [Fe(II)/Fe(III) - H$\text{}_{2}$O$\text{}_{2}$], containing additionally the N$\text{}_{3}^{-}$, Eu(III) or Sm(III) ions, we found that the Eu(III) or Sm(III) ions were excited as a result of energy transfer process. A mechanism of the studied reactions is proposed.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 101-108
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Catalyst-Free Growth of Magnesium Oxide Whiskers and Their Characteristics
Autorzy:
Kim, H.
Kong, M.
Yang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813397.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
This study reports the production of magnesium oxide (MgO) whiskers on silicon (Si) substrates by the thermal heating of $MgB_2$ powders. We investigated the structural properties of the as-synthesized whiskers by using X-ray diffraction, transmission electron microscopy, selected area electron diffraction, and scanning electron microscopy. The product consisted of one-dimensional whiskers with a square cross-section. The whiskers had a single-crystalline cubic structure of MgO. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.39 eV and 2.91 eV. We proposed the growth of MgO whiskers to follow the vapor-solid mechanism.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of the IB Emission Band in Al-Doped ZnS Crystals
Autorzy:
Liem, N. Q.
Quang, V. X.
Thanh, D. X.
Powiązania:
https://bibliotekanauki.pl/articles/1945436.pdf
Data publikacji:
1996-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Et
Opis:
Time-resolved luminescence spectroscopy and thermal lensing techniques are applied to the study of deep centre photoluminescence and absorption in Al-doped ZnS crystals, which are as-grown or heat treated in different Zn rich or S rich atmospheres. A blue emission band peaking at 2.89 eV has been identified as IB band in all the mentioned crystals. Parameters of the IB band at 300 K, 77 K and 10 K such as peak energy, half width of spectrum, radiative lifetime have been determined. The IB band exhibits some special properties such as a shift neither with increasing delay time nor with excitation intensity nor with sample temperatures as well as a superlinearly excitation intensity dependence of the luminescence. An energy diagram and electronic transitions in the IB centre are presented to explain the experimental results.
Źródło:
Acta Physica Polonica A; 1996, 89, 5-6; 717-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$SiO_x$ Nanowires Produced on Molybdenum-Coated Si Substrates
Autorzy:
Kim, H.
Lee, J.
Yang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813396.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
We synthesized $SiO_x$ nanowires with diameters of 30-140 nm, for the first time by the simple heating of the Mo-coated Si substrates. X-ray diffraction, selected area electron diffraction, and energy-dispersive X-ray spectroscopy indicated that the nanowires were in an amorphous state, comprising Si and O only. Fitting the photoluminescence spectrum with Gaussian functions revealed that the nanowires exhibited significant photoluminescence intensities near blue and green light regions. We extensively discussed the possible growth mechanism of $SiO_x$ nanowires.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1017-1020
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implantation of Rare-Earth Atoms into Si and III-V Compounds
Autorzy:
Kozanecki, A.
Langer, J. M.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1924312.pdf
Data publikacji:
1993-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
78.55.-m
Opis:
Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
Źródło:
Acta Physica Polonica A; 1993, 83, 1; 59-70
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Studies of Aluminum Nitride Nanowires
Autorzy:
Yang, J.
Na, H.
Kim, H.
Kebede, M.
Choi, R.
Jeong, J.
Lee, C.
Powiązania:
https://bibliotekanauki.pl/articles/1505466.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 125-127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Competition of Radiation Processes in 6H-SiC Observed by Luminescence
Autorzy:
Wysmołek, A.
Mroziński, P.
Dwiliński, R.
Vlaskina, S.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1873137.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.60.Kn
Opis:
We report on the results of photoluminescence and thermoluminescence measurements of various 6H-SiC crystals. At low temperature in all n-type samples two bands with maxima at 2.7 eV (blue) and 1.8 eV (orange) were detected. In the p-type material only blue band was observed. The measurements performed at a broad range of temperatures showed totally different behaviour of photoluminescence intensity of both bands. The presented results could be explained in the model assuming well established donor-acceptor pair recombination for the blue band emission and the conduction band - deep defect transition for the orange band. The proposed model was confirmed by thermoluminescence measurements of the orange band which showed peaks at 30 K, 80 K, 100 K, 150 K attributed to ionization of subsequent shallow donor levels.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 437-440
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis, Structure, Photoluminescence, and Raman Spectrum of Indium Oxide Nanowires
Autorzy:
Kim, H.
Na, H.
Yang, J.
Lee,, C.
Powiązania:
https://bibliotekanauki.pl/articles/1505485.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
Production of indium oxide $(In_2O_3)$ whiskers at a very low temperature of 650°C was reported. The synthetic route was comprised of a thermal heating process of a mixture of In and Mg powders. We have investigated the structural properties of the as-synthesized nanowires by using X-ray diffraction and scanning electron microscopy. The product consisted of one-dimensional nanowires, with a crystalline cubic structure of $In_2O_3$. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.1 eV and 2.8 eV. The peaks of the Raman spectrum were indexed to the modes being associated with cubic $In_2O_3$.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 143-145
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Preheating Temperature on Microstructure and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Spin Coating Technique
Autorzy:
Ji, Qiang-min
Wang, Ya-li
Gao, Xiao-yong
Gao, Hui
Zhai, Yao-fei
Powiązania:
https://bibliotekanauki.pl/articles/1398971.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.55.-m
Opis:
Highly-oriented ZnO thin films prepared by using low-cost technique such as sol-gel technique are of much importance to ZnO-based white light-emitting diodes. The chose of proper preheating temperature in sol-gel technique is still critical for highly-oriented ZnO thin film so far. The mechanisms for the preheating in the formation of ZnO thin film and for the reactions involved in the sol solution have not been clearly stated yet. Thus, in this work, the highly-oriented ZnO thin films were prepared on glass substrates by using sol-gel spin-coating technique. The sol solution was prepared by using the two-step method rather than usual one-step method, which facilitates the understanding of the mechanism for the reactions involved in the sol solution. The effect of the preheating temperature on the microstructure and the optical properties of the films were in particular investigated. The mechanisms for the preheating in the formation of the films and for the reactions involved in the sol solution prepared by the two-step method were also proposed in terms of the experimental results. The preheating not only enhances the volatilization of the solvent 2-methoxyethanol and the decomposition of the residual organic species, but also results into the formation of small number of ZnO particles. The preheating temperature of 300°C is most favorable for the highly-oriented ZnO thin film. Increasing the preheating temperature results into the blue shift of the absorption edges of the films. This can be explained by using the quantum-size effect. The photoluminescence spectra of the films show an UV emission at the near-band edge and a broad green-yellow emission at 470-620 nm. The former is closely related to the excitons, while the latter is to the intrinsic defect species in the film.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1191-1196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity
Autorzy:
Kozanecki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1929781.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Ih
78.55.-m
Opis:
Lattice location experiments performed on Yb- and Er-doped III-V semiconducting compounds using Rutherford backscattering and channeling have been reviewed. It has been shown that Yb atoms locate substitutionally in InP and InP-based ternary alloys, while in gallium compounds no substitutional fraction of Yb could be detected. An intense intra-4f-shell luminescence of Yb$\text{}^{3+}$ has been observed in In compounds. The photoluminescence spectra of Yb$\text{}^{3+}$ reflect local alloy disorder in InPAs and GaInP, suggesting that the Yb atoms are tetrahedrally coordinated. No Yb-related emission could be observed in gallium compounds, except a weak Yb$\text{}^{3+}$ photoluminescence in GaP. An evidence has been presented that Er atoms introduced into III-V compounds locate predominantly at interstitial positions. In GaAs they move into tetrahedral lattice sites as a result of thermal annealing at temperatures higher than 600°C. The location of Er atoms at substitutional positions is accompanied with the disappearance of the intra-4f-shell luminescence of Er$\text{}^{3+}$. The reasons of the observed correlation of luminescence properties and positions of Er and Yb atoms in zincblende lattices are discussed.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 881-888
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
Autorzy:
Wysmołek, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932094.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
72.20.Ht
Opis:
Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 261-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence and Double-Crystal X-Ray Study of InGaAs/InP: Effect of Rare Earth (Dysprosium) Addition During Liquid Phase Epitaxial Growth
Autorzy:
Pödör, B.
Csontos, L.
Somogyi, K.
Vignaud, D.
Powiązania:
https://bibliotekanauki.pl/articles/1876215.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
72.80.Ey
Opis:
High purity In$\text{}_{0.53}$Ga$\text{}_{0.47}$As layers were grown on semi-insulating InP:Fe substrates by liquid phase epitaxy by adding small amounts of dysprosium (rare earth) to the melt. Hall effect and photoluminescence measurements showed that the addition of Dy strongly reduced the carrier and residual donor concentration, with a concurrent shift of the excitonic luminescence toward higher energies. The observed effects are ascribed to the gettering of residual donor impurities in the melt by Dy, as well as to the effects of possible incorporation of Dy into the grown layers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 465-468
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:
Kundrotas, J.
Čerškus, A.
Ašmontas, S.
Valušis, G.
Sherliker, B.
Halsall, M.
Harrison, P.
Steer, M.
Powiązania:
https://bibliotekanauki.pl/articles/1178273.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
78.55.-m
Opis:
We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 245-249
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Luminescent Properties of $Eu^{3+}$ Doped Crystalline Diphosphate $Na_2ZnP_2O_7$
Autorzy:
Guerbous, L.
Gacem, L.
Powiązania:
https://bibliotekanauki.pl/articles/1418919.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.55.-m
78.55.Hx
Opis:
Undoped and $Eu^{3+}$-doped disodium zinc diphosphate $Na_2ZnP_2O_7$ (NZPO) single crystals are grown by the Czochralski method. X-ray diffraction, Fourier transform infrared and Raman techniques were used to check the crystallographic structure. Excitation and emission spectra were measured at room temperature and studied. The $Eu^{3+}$ ions occupy a non-centrosymmetric site with different coordination number. Very efficient energy transfer from $O-Eu^{3+}$ band state to $Eu^{3+}$ excited energy levels is highlighted.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 535-538
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopic Investigation of Rare-Earth Doped Phosphate Glasses Containing Silver Nanoparticles
Autorzy:
Amjad, R.
Sahar, M.
Ghoshal, S.
Dousti, M.
Samavati, M.
Riaz, S.
Tahir, B.
Powiązania:
https://bibliotekanauki.pl/articles/1400152.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Ly
78.55.-m
78.66.Jg
Opis:
Phosphate glasses having compositions $(59.5-x)P_2O_5-40MgO-xAgCl-0.5Er_2O_3$, where x=0, 1.5 mol.% is prepared using melt-quenching technique. Infrared, absorption and photoluminescence spectra of $Er^{3+}$-doped magnesium phosphate glasses have been reported. The amorphous nature of the host glass is confirmed by X-ray diffraction technique. Transmission electron microscope image confirms the existence of silver nanoparticles inside the glass matrix. The localized surface plasmon resonance band of silver is found to be located around ≈ 528 nm for the $Er^{3+}$ free sample. A frequency upconversion process from infrared to visible is observed on excitation with 797 nm radiation. Furthermore, an enhancement in the emission at 540 nm and 632 nm is found due to the local field effect of silver nanoparticles. Our findings may contribute towards the development of solid state laser and sensors.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 746-749
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Physics of Solid-State Laser Materials
Autorzy:
Wojtowicz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1888052.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Rz
78.50.-w
78.55.-m
Opis:
A survey of the physical properties of solid state materials activated with d$\text{}^{2}$, d$\text{}^{3}$ and d$\text{}^{8}$ transition metal ions is presented in the context of tunable laser operation. An emphasis is put on common characteristics of all three systems, like a strong electron-phonon coupling and similar electronic structures. The conditions necessary to obtain a tunable operation and to avoid an overlap of the excited state absorption and emission are formulated. It is shown that the d$\text{}^{3}$ configuration system has the largest range of allowed values of the crystal field parameter 10Dq.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 193-205
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Kinetics of YAG Crystals Activated with Ce, and Ce and Mg
Autorzy:
Barzowska, J.
Kubicki, A.
Grinberg, M.
Kaczmarek, S.
Łuczyński, Z.
Wojtowicz, A. J.
Koepke, Cz.
Powiązania:
https://bibliotekanauki.pl/articles/1995826.pdf
Data publikacji:
1999-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.47.+p
78.55.-m
Opis:
A basic spectroscopic measurements of luminescence, absorption, luminescence excitation spectra and emission kinetic measurements on YAG crystals activated with cerium and magnesium are presented. We report that the Ce$\text{}^{3+}$ luminescence decay constant, at 65 ns, is independent of Ce concentrations (from 0.05 to 0.2%) and that it does not change with the presence or absence of the Mg co-dopant. Nevertheless, we find that under pulsed laser excitation at 290 nm the rise time in Ce luminescence time profiles is effectively shorter in the Mg co-doped samples.
Źródło:
Acta Physica Polonica A; 1999, 95, 3; 395-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rare Earth Centres in Mixed Compound Crystals
Autorzy:
Kozanecki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1945470.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.55.-m
78.50.Ge
Opis:
A review of the Yb impurity related centres in mixed InP-based crystals has been presented. It is shown that Yb$\text{}^{3+}$ ions can be utilized to probe alloy disorder, both in cationic (GaInP) and anionic (InPAs) alloys. The existence of alloy disorder manifested itself in the photoluminescence spectra reflecting local atomic structure of the Yb centres. The dominant emissions have been ascribed to the Yb-P$\text{}_{4}$Ga$\text{}_{12}$ and Yb-P$\text{}_{4}$-Ga$\text{}_{11}$In complexes in GaInP and to Yb-P$\text{}_{4}$ and Yb-P$\text{}_{3}$As centres in InPAs. The excitation and relaxation mechanisms of the 4f-shell of Yb$\text{}^{3+}$ ions were also investigated. It was found that the temperature quenching of the Yb$\text{}^{3+}$ luminescence was accompanied with the appearance of two thermally activated photoluminescence bands. It is suggested that photoluminescence at an energy of 25 meV below the energy gap is due to recombination of excitons bound at Yb-related centres. Relaxation of the excited 4f-shell of Yb$\text{}^{3+}$ ions proceeds via back transfer of the excitation energy from the 4f-shell to excitons bound at Yb-centres.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 73-82
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
Autorzy:
Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929707.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.55.-m
78.20.Jq
Opis:
GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near-Band-Edge Photoluminescence from Very High Quality Hexagonal ZnO Bulk Crystals
Autorzy:
Lieu, N. T. T.
Dat, D. H.
Liem, N. Q.
Powiązania:
https://bibliotekanauki.pl/articles/2035657.pdf
Data publikacji:
2003-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
78.55.-m
78.55.Et
Opis:
The near-band-edge photoluminescence spectra of very high quality hexagonal ZnO single crystals in the temperature range between 9 and 305 K were measured. Based on the energetic positions and the evolutions of well-resolved photoluminescence lines with temperature and with excitation power density we interpret the observed photoluminescence lines as resulting from recombination of the free-exciton, bound-exciton, biexciton, inelastic exciton-exciton collision and electron-hole plasma.
Źródło:
Acta Physica Polonica A; 2003, 103, 1; 67-75
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis, Characterization and Luminescence Properties οf $Sr_3WO_6:Eu^{3+}$ Phosphor
Autorzy:
Emen, F.
Altinkaya, R.
Sonmez,, S.
Kulcu, N.
Powiązania:
https://bibliotekanauki.pl/articles/1491444.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Hx
61.43.Gt
Opis:
$Sr_3WO_6:Eu^{3+}$ phosphor was prepared at high temperature by solid state method. The phase structure of phosphor was characterized as double perovskite structure. The cell parameters of $Sr_3WO_6:Eu^{3+}$ were determined as a = 8.361 Å, b = 8.288 Å, c = 8.211 Å, α = β = γ = 89.78°. The luminescence properties were studied. The results revealed that $Eu^{3+}$ ions show red emission about 616 nm.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 249-250
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Upconversion-Rate in Er-Doped Fibers
Autorzy:
Jaskorzyńska, B.
Sergeyev, S.
Świłło, M.
Khoptyar, D.
Powiązania:
https://bibliotekanauki.pl/articles/2015114.pdf
Data publikacji:
2001-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Bh
78.55.-m
42.55.Rz
Opis:
Energy transfer between excited rare-earth ions has been widely used for realizing upconversion lasers and also recognized as a gain limiting factor in high-concentration Er-doped amplifiers. The energy transfer leads to upconversion of the excitation which for randomly distributed (not clustered) ions is called homogeneous upconversion. It was commonly assumed that the rate of homogeneous upconversion is a linear function of the population inversion N$\text{}_{2}$. However, recently published Monte Carlo simulations predict that the homogeneous upconversion rate is a nonlinear function of N$\text{}_{2}$ and that it, moreover, depends on the pump and signals rates. In this paper we review some of our experimental results confirming those predictions. We also propose a statistical, analytical model describing the observed homogeneous upconversion behavior in Er-doped fibers.
Źródło:
Acta Physica Polonica A; 2001, 99, 1; 147-153
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intercalation of Layered Metal Iodides with Pyridine Evidenced by Raman Spectroscopy
Autorzy:
Preda, N.
Mihut, L.
Baibarac, M.
Baltog, I.
Powiązania:
https://bibliotekanauki.pl/articles/1807830.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Tx
78.30.-j
78.55.-m
Opis:
$PbI_2$, $BiI_3$, $CdI_2$ and AgI crystalline samples intercalated with pyridine have been studied by Raman spectroscopy. Comparing the Raman spectra of pristine metal iodides with those of intercalated samples we have shown the coexistence, in the host crystalline lattice, of two adsorbed forms: a physisorbed one, featured by weak forces of van der Waals type and a chemisorbed one, involving stronger forces related to an electrostatic interaction. The physisorbed form is consistent with the molecules inserted into the interlayer spaces while the chemisorbed form is represented by the molecules forming coordination complexes with the crystalline lattice cations. The crucial role in the formation of such complexes is played by the lone pair of nitrogen atom belonging to the molecules.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 81-83
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders
Autorzy:
Park, K.
Hakeem, D.
Kim, J.
Kim, Y.
Kim, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398243.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Hx
78.55.Et
Opis:
The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 902-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transient Photoconductivity and Photoluminescence in InP:Cu
Autorzy:
Stalnionis, A.
Adomavic̆ius, R.
Krotkus, A.
Marcinkevic̆ius, S.
Leon, R.
Jagadish, C.
Powiązania:
https://bibliotekanauki.pl/articles/1952097.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.47.+p
78.55.-m
Opis:
Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that doping with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 931-934
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC
Autorzy:
Wysmołek, A.
Baranowski, J. M.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1934050.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.20.-e
78.60.Kn
Opis:
We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 957-960
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence
Autorzy:
Buczko, R.
Langer, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1929682.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
73.40.Kp
78.55.-m
Opis:
By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 591-594
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polymer-oxide composites: toward new optical materials
Autorzy:
Nedilko, S.
Powiązania:
https://bibliotekanauki.pl/articles/1052642.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.22.Ch
78.55.-m
78.66.Sq
Opis:
Brief summary concerning properties of the polymer matrix incorporated with inorganic, e.g. oxide particles, micro/nanocomposites and opportunity to use these composites as optical materials for modern optics and optoelectronic devices is presented in the work. Structure and morphology of the several sets of the new polymer micro/nanocomposites based on the microcrystalline cellulose incorporated with micro/nanoparticle of various oxides (NaNO₂, La_{1-x}Sm_{x}VO₄, La_{1-x}Eu_{x}VO₄ and K₂Eu(PO₄)(MoO₄)), were prepared by "dry" and "wet" cool pressing procedure. Morphology of these composites was described as ensemble of cellulose plates and located gains of the oxide particles. Temperature dependences of complex dielectric permittivity and luminescence properties of the composites were studied. Temperature and electromagnetic field frequency dependences of the dielectric permittivity revealed influence of oxide particles on the characteristics of the microcrystalline cellulose. Both wide band (matrix emission) and narrow lines (RE ions emission) of visible luminescence (350-750 nm range) of the composites is excited in the range 250-550 nm. The luminescence characteristics displayed effect of cellulose on the electronic system of the Sm³⁺ and Eu³⁺ ions and effect of oxide particles on the cellulose matrix was shown, too. Spectral characteristics and high intensity of luminescence showed perspectives of studied composites to be used as light converters in LED and elsewhere as optics luminescent materials.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 829-837
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiative Donor-Acceptor Pair Recombination in $Tl_2Ga_2Se_3S$ Layered Single Crystals
Autorzy:
Gasanly, N.
Powiązania:
https://bibliotekanauki.pl/articles/1400493.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.20.-e
71.55.-i
Opis:
The emission band spectra of $Tl_2Ga_2Se_3S$ layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW $cm^{-2}$ range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from the moderately deep donor level $E_{d}$=270 meV to the shallow acceptor level $E_{a}$=10 meV were suggested to be responsible for the observed photoluminescence band.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 128-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Properties of Microcrystalline Cellulose "Ceramics-Like" Composites Incorporated with LaVO₄:Sm Oxide Compound
Autorzy:
Nedielko, M.
Alekseev, O.
Chornii, V.
Kovalov, K.
Lazarenko, M.
Nedilko, S.
Scherbatskyi, V.
Boyko, V.
Sheludko, V.
Powiązania:
https://bibliotekanauki.pl/articles/1052560.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.22.Ch
78.55.-m
78.66.Sq
Opis:
Composite samples based on microcrystalline cellulose matrix incorporated with micro/nanoparticles of La_{0.7}Sm_{0.3}VO₄ complex oxide were made by cool pressing procedure. Morphology, crystallinity and characteristic luminescence and dielectric properties of the composites were studied. Their morphology can be described as "ceramics-like" type, as it consists of cellulose plates and embedded oxide particles. Luminescence spectra of the composites covers the range of the whole visible light, 350-750 nm, and comprises both wide band and narrow lines, related with host and oxide luminescence, respectively. Temperature dependences of the dielectric permittivity of composites showed the impact of the oxide particles on the characteristics of the microcrystalline cellulose. An assumption was made that this influence can be affected via water molecules, hydroxyl groups or molecules of the ambient gases. Studied composites can be perspective luminescent materials for transformation of ultraviolet and violet radiation into green-red light.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 838-842
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Luminescence in Er and Er+O Implanted 6H SiC
Autorzy:
Kozanecki, A.
Jantsch, W.
Heis, W.
Prechtl, G.
Sealy, B. J.
Jeynes, C.
Powiązania:
https://bibliotekanauki.pl/articles/1968292.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ww
71.55.-i
78.55.-m
Opis:
Photoluminescence in the neighbourhood of 1.54 μm due to the $\text{}^{4}$I$\text{}_{13}\text{}_{/}\text{}_{2}$ -$\text{}^{4}$I$\text{}_{15}\text{}_{/}\text{}_{2}$ intra-4f-shell transitions of Er$\text{}^{3+}$ ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 879-882
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Annealing on Optical Properties of ZnO Nanorods Obtained by the Microwave-Assisted Hydrothermal Process
Autorzy:
Materska, P.
Witkowski, B.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185899.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
61.46.-w
61.72.Cc
Opis:
Optical properties of ZnO nanorods (of different sizes, grown on two different substrates) are investigated. Nanorods were grown using microwave-assisted hydrothermal process on gallium nitride or silicon substrate. To initiate nanorods growth on a silicon substrate ZnO nucleation layer was used. ZnO nanoseeds were deposited by atomic layer deposition. For GaN substrate an epitaxial relation was observed. For both substrates nanorods show a hexagonal structure, expected for wurtzite ZnO. Results of nanorods annealing are discussed.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1202-1204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of dielectric medium anisotropy on the polarization degree of emission from a single quantum dash
Autorzy:
Mrowiński, P.
Tarnowski, K.
Olszewski, J.
Somers, A.
Kamp, M.
Höfling, S.
Reithmaier, J.
Urbańczyk, W.
Misiewicz, J.
Machnikowski, P.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1159588.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.-m
Opis:
Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-48-A-52
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Magneto-Optical Study on Single Quantum Wells, Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te/Cd$\text{}_{1-x'-y}$Zn$\text{}_{x}$'Mn$\text{}_{y}$Te
Autorzy:
Takeyama, S.
Grabecki, G.
Adachi, S.
Takagi, Y.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934045.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.20.Ls
78.66.Hf
Opis:
Four-single quantum wells composed of the ternary non-magnetic compounds Cd$\text{}_{0.93}$Zn$\text{}_{0.07}$Te (well width = 13, 19, 40, 90 Å), separated by the quaternary magnetic-compound Cd$\text{}_{0.48}$Zn$\text{}_{0.04}$Mn$\text{}_{0.48}$Te on (100)GaAs substrate were grown by MBE, and exhibited clear and distinctive photoluminescence lines corresponding to each quantum well. Double luminescence peaks with closely spaced within one well were observed from 90 Å and 40 Å quantum wells. Temperature and magnetic-field study revealed characteristic luminescence features associated with a bound exciton near the interface rather than with one monolayer fluctuation.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 945-948
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
Autorzy:
Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A.
Powiązania:
https://bibliotekanauki.pl/articles/1505529.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
68.65.-k
Opis:
We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 177-179
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of the Excitonic Photoluminescence in $n^{+}$/i-GaAs by Controlling the Thickness and Impurity Concentration of the $n^{+}$ Layer
Autorzy:
Čerškus, A.
Nargelienė, V.
Kundrotas, J.
Sužiedėlis, A.
Ašmontas, S.
Gradauskas, J.
Johannessen, A.
Johannessen, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505489.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
71.55.Eq
Opis:
This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, $N_{Si} = 10^{17} cm^{-3}$ and $N_{Si} = 10^{18} cm^{-3}$, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the $n^{+}$/i-GaAs homojunction are discussed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 154-157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure
Autorzy:
Pieczarka, M.
Maryński, A.
Podemski, P.
Misiewicz, J.
Spencer, P.
Murray, R.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1185237.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.-m
Opis:
We investigate double layer InAs/GaAs quantum dots grown in the Stransky-Krastanov mode by molecular beam epitaxy. The sample consists of two layers of InAs quantum dots separated by 10 nm thick GaAs layer, where the top quantum dot layer of an improved homogeneity is covered by an InGaAs cap. This configuration has allowed for the extension of the dots' emission to longer wavelengths. We probed the carrier transfer between the states confined in a double quantum well composed of InGaAs cap and the quantum dots wetting layer to the states in the quantum dots by means of photoluminescence excitation and photoreflectance spectroscopies. Efficient emission from quantum dots excited at the double quantum well ground state energy was observed. There is also presented a discussion on the carrier injection efficiency from the capping layer to the quantum dots.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-59-A-61
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrothermal Synthesis and Microstructural, Optical Properties Characterization of $YVO_4$ Phosphor Powder
Autorzy:
Zhang, S.
Liang, Y.
Gao, X.
Liu, H.
Powiązania:
https://bibliotekanauki.pl/articles/1207386.pdf
Data publikacji:
2014-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
42.70.Hj
78.67.-n
Opis:
The phonon energy of $YVO_4$ crystal is lower than other usual compounds of salt. So it is suitable as host material for down-conversion materials. Hydrothermal method was adopted to synthesize $YVO_4$ phosphor powder with the use of yttrium oxide and sodium vanadate as raw material. The change in the relative integral intensity of the (200) and (112) diffraction peaks indicates that macroscopic stress in the lattice obviously changes with the elevated hydrothermal reaction temperature. The $YVO_4$ phosphor powder synthesized involves a certain agglomeration of small particles. The phonon vibration in the $YVO_4$ originates mainly from the internal vibrations in the vanadium-oxygen tetrahedron, in addition to the Y-O and O-H vibrations. Due to a low phonon energy of only $2.8188 × 10^{-21} J$, $YVO_4$ helps to improve the down-conversion efficiency of rare-earth ions. A bandgap value of approximately 3.8 eV for the synthesized $YVO_4$ powders leads to good absorption properties in the ultraviolet region. Upon excitation by the 320 nm ultraviolet photon, the intrinsic emission of $YVO_4$ powders is annihilated, and a broadband emission of $VO_4^{3-}$ near 450 nm is observed at room temperature. The $YVO_4$ phosphor powder synthesized at 180C exhibits the maximum photoluminescence intensity because of its excellent crystallization.
Źródło:
Acta Physica Polonica A; 2014, 125, 1; 105-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs
Autorzy:
Kundrotas, J.
Čerškus, A.
Valušis, G.
Lachab, M.
Khanna, S.
Harrison, P.
Linfield, E.
Powiązania:
https://bibliotekanauki.pl/articles/1813382.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.67.De
71.30.+h
Opis:
We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3×$10^{12} cm^{-2}$.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 963-966
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Topographical, Magnetic and Optical Studies of (II,Mn)VI Quantum Structures Grown on (Ga,Mn)As
Autorzy:
Butkutė, R.
Aleszkiewicz, M.
Janik, E.
Cywiński, G.
Wojnar, P.
Däweritz, L.
Primus, J.
De Boeck, J.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/2036853.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
07.79.Pk
78.55.-m
Opis:
We report on an overgrowth of quantum structures consisting of diluted magnetic semiconductor CdMnTe quantum wells with non-magnetic barriers made of CdMgTe or ZnTe on ferromagnetic MnAs and GaMnAs films by molecular beam epitaxy. Atomic force microscopy images of the quantum structures grown on MnAs demonstrated the existence of two types of regions on the surface: protruded islands with micrometric sizes, surrounded by areas of small-scale roughness. Magnetic force microscopy study of these samples revealed a magnetic domain structure only on the above mentioned islands. The (II,Mn)VI quantum wells grown on GaMnAs films exhibited relatively smooth surface, but no magnetic force microscopy signal was measurable either before or after magnetizing the sample. In the luminescence spectra of all our quantum structures the emission attributed to CdMnTe quantum wells was observed. The influence of magnetization on the luminescence line position was investigated.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 649-657
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study on Fluorescence Characteristic of a Complex Probe οf CdSe Quantum Dots Coupling with Thiazole Orange
Autorzy:
Fei, X.
Jia, G.
Wang, J.
Gu, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1537765.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Kv
78.55.-m
78.67.-n
Opis:
CdSe quantum dots were synthesized using thioglycolic acid as stabilizer in aqueous solution under $N_{2}$. The UV-vis spectrometry and fluorescence spectra indicate that the bimodal quantum dots were formed and the optical band gaps are about 650 nm and 750 nm, respectively. The quantum dots coated with TO were prepared in room temperature, and the fluorescence characteristic was studied. The result showed that the peak shift of quantum dots fluorescence spectra can mainly be due to the change of the capping layer, resulting in the confinement energy change. This is vital for the investigating on of the forming process and mechanisms of the combination of thiazole orange dye and quantum dots.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 949-952
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Alternately-Strained $ZnS_{x}Se_{1-x}$/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV
Autorzy:
Evropeytsev, E.
Sorokin, S.
Gronin, S.
Sedova, I.
Klimko, G.
Sitnikova, A.
Baidakova, M.
Ivanov, S.
Toropov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1376074.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Pt
81.07.-b
78.55.-m
Opis:
We report on design and fabrication of alternately-strained $ZnS_xSe_{1-x}$/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness ≈300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above ≈ 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III-V and II-VI materials.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1156-1158
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnO Films Grown at Low Temperature
Autorzy:
Przeździecka, E.
Krajewski, T.
Wójcik-Głodowska, A.
Yatsunenko, S.
Łusakowska, E.
Paszkowicz, W.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811975.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
81.10.-h
85.30.Fg
Opis:
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1303-1310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-50 z 351

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies