Skocz do pozycji: 1.

Tytuł:

Factors Affecting Luminescence Intensity of Lanthanide Ions. Analytical Applications of Lanthanide Luminescence in Solution

Autorzy:

Lis, S.

Powiązania:

https://bibliotekanauki.pl/articles/1929808.pdf

Data publikacji:

1993-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m

Opis:

The factors which efficiently reduce nonradiative energy degradation of the lanthanide ion fluorescence are described. The most sensitive systems in spectrofluorimetric determination of trace amounts of lanthanide ions based on the complex formation, intramolecular energy transfer and mixed complexes with synergic agents in a liquid phase, are presented. Detection limits of highly sensitive systems obtained with the use of conventional and laser-excited spectrofluorimetry for Sm(III), Eu(III), Tb(III) and Dy(III) are compared.

Źródło:

Acta Physica Polonica A; 1993, 84, 5; 1003-1010
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 2.

Tytuł:

Determination of Free Exciton Capture Cross Section of Si:Al by Photoluminescence

Autorzy:

Schramm, G.

Powiązania:

https://bibliotekanauki.pl/articles/1887812.pdf

Data publikacji:

1991-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m

Opis:

The free excitons capture rate and capture cross-section of the neutral Al atom in silicon were determined at 4.2 K. The obtained values are of the same order of magnitude as reported values of other shallow dopants.

Źródło:

Acta Physica Polonica A; 1991, 79, 6; 869-872
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 3.

Tytuł:

The Luminescence of $CdWO_4$:Tb,Li Crystals under Synchrotron Excitation at 10 K

Autorzy:

Novosad, S.
Kostyk, L.
Novosad, I.
Luchechko, A.
Stryganyuk, G.

Powiązania:

https://bibliotekanauki.pl/articles/1418270.pdf

Data publikacji:

2012-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m

Opis:

The luminescent properties of $CdWO_4$:Tb,Li crystals have been investigated at 10 K in the region 4-25 eV using synchrotron excitation. It is shown that besides the intrinsic matrix luminescence the number emission lines due to electron f-f-transitions in $Tb^{3+}$ ions are efficiently excited at near-edge region of the fundamental absorption ($E_\text{exc}$ = 4.1 eV). The weak recombination luminescence of terbium impurity on the background of intensive matrix luminescence is observed under excitation in the region of fundamental absorption ($E_\text{exc}$ = 5.4 and 13.8 eV). It is shown that the luminescence spectrum of the matrix is a superposition of three elementary bands 2.07, 2.47, and 2.73 eV. The nature of emission bands is discussed.

Źródło:

Acta Physica Polonica A; 2012, 122, 4; 717-720
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 4.

Tytuł:

Comparative Spectroscopic Study of the Dy$\text{}^{3+}$ Doped Double Chloride and Double Fluoride Crystals for Telecommunication Amplifiers and IR Lasers

Autorzy:

Tkachuk, A.
Ivanova, S.
Isaenko, L.
Yelisseyev, A.
Payne, Steve
Solarz, R.
Nostrand, M.
Page, R.
Payne, Stephen

Powiązania:

https://bibliotekanauki.pl/articles/1995823.pdf

Data publikacji:

1999-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m

Opis:

In this work we studied spectroscopic characteristics of potassium-lead double-chloride, and lithium-yttrium double-fluoride crystals doped with dysprosium. Objects of research were KPb$\text{}_{2}$Cl$\text{}_{5}$:Dy$\text{}^{3+}$, and LiYF$\text{}_{4}$ (YLF):Dy$\text{}^{3+}$ crystals grown by the Bridgman-Stockbarger technique. We obtained the effective distribution coefficients K$\text{}_{Dy}$=0.95 for LiYF$\text{}_{4}$ :Dy$\text{}^{3+}$, and K$\text{}_{Dy}$=1 for KPb$\text{}_{2}$Cl$\text{}_{5}$:Dy$\text{}^{3+}$. Optical spectra were studied, intensity parameters were determined by the Judd-Ofelt method, and radiative probabilities and branching ratio were calculated. The conclusion was made that the studied crystals can be considered as promising new active media for laser diode pumped solid state lasers. The YLF:Dy$\text{}^{3+}$ crystals are perspective for laser action near 3 mm, and the KPb$\text{}_{2}$Cl$\text{}_{5}$ :Dy$\text{}^{3+}$ for multiwavelength IR lasers, and for 1.3 mm laser diode pumped telecommunication amplifiers.

Źródło:

Acta Physica Polonica A; 1999, 95, 3; 381-394
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 5.

Tytuł:

Infrared-to-Visible Upconversion in Erbium Pentaphosphate

Autorzy:

Kaczmarek, F.
Balicki, M.
Karolczak, J.

Powiązania:

https://bibliotekanauki.pl/articles/1929357.pdf

Data publikacji:

1993-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.55.Hx

Opis:

Infrared-to-visible upconversion has been observed by many authors in a variety of rare-earth-doped crystals. This paper reports the study of the up-conversion found in stoichiometric erbium pentaphosphate, ErP$\text{}_{5}$O$\text{}_{1}$4. Strong green fluorescence was observed upon pumping the crystal with a cw diode laser at a wavelength of about 800 nm.

Źródło:

Acta Physica Polonica A; 1993, 83, 6; 831-836
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 6.

Tytuł:

Study of Blue Photoluminescent Band in ZnS Crystals

Autorzy:

Liem, N. Q.
Quang, V. X.
Thanh, D. X.

Powiązania:

https://bibliotekanauki.pl/articles/1931824.pdf

Data publikacji:

1994-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.55.Et

Opis:

The zinc sulphide crystals as-grown and heat treated in different atmospheres, have been studied by photoluminescence technique. A blue emission band (IB) peaking at 2.91 eV has been identified in the mentioned crystals. Parameters of the IB band such as peak energy, half width of spectrum, lifetime of photoluminescence as well as a superlinearly excitation intensity dependence of the luminescence have been determined. A model of the IB transition is proposed to explain the properties and features of IB luminescence.

Źródło:

Acta Physica Polonica A; 1994, 86, 6; 979-985
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 7.

Tytuł:

Energy Transfer, Fluorescence and Scintillation Processes in Cerium-Doped RE$\text{}^{3+}$ AlO$\text{}_{3}$ Fast Scintillators

Autorzy:

Mares, J. A.
Nikl, M.

Powiązania:

https://bibliotekanauki.pl/articles/1945462.pdf

Data publikacji:

1996-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.60.-b

Opis:

Modern applications of scintillators in medical imaging of human body (Positron Emission Tomography - PET scanning, γ-cameras and other X-ray tomographies) require improved or even quite new scintillators which should be characterized by (i) fast response, (ii) high density and (iii) high light yield. At present time new scintillating crystals are investigated, mainly those having perovskite lattice structure of the formula RE$\text{}^{3+}$ AlO$\text{}_{3}$:Ce where RE $\text{}^{3+}$ = Y$\text{}^{3+}$, Gd$\text{}^{3+}$ and Lu$\text{}^{3+}$. Here, we will present the newest data with summarising properties of these types of scintillators including the mixed ones. Energy transfer processes between Ce$\text{}^{3+}$ main centres and Ce$\text{}^{3+}$ multisites are discussed together with their mechanisms including processes between Ce $\text{}^{3+}$ and Gd$\text{}^{3+}$ ions. Finally, the characteristic properties of scintillating crystals based on perovskite structure are reviewed.

Źródło:

Acta Physica Polonica A; 1996, 90, 1; 45-54
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 8.

Tytuł:

Influence of N$\text{}_{3}^{-}$ Ions on Chemiluminescence of the Eu(II)/Eu(III)-H$\text{}_{2}$O$\text{}_{2}$ System

Autorzy:

Elbanowski, M.
Staninski, K.
Kaczmarek, M.
Lis, S.

Powiązania:

https://bibliotekanauki.pl/articles/1945476.pdf

Data publikacji:

1996-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.60.Ps
78.55.-m

Opis:

The basic system of chemiluminescence investigations of relevant biological and inorganic compounds consists of Eu(II)/Eu(III) - H$\text{}_{2}$O$\text{}_{2}$. In these studies the increase in Eu(III) ion emission intensity usually results from an effective complexation reaction. In the present study, the N$\text{}_{3}^{-}$ ions are used as a ligand. The increase in the chemiluminescence intensity of the Eu(III) ion, the pH influence (in the range of 4.5-7.5) on the chemiluminescence intensity of the Eu(III) ion, as well as the quenching of the $\text{}^{5}$D$\text{}_{0}$ excited state of the Eu(III) ion are observed due to N$\text{}_{3}^{-}$ complexation. Taking into account the well-known Fenton system [Fe(II)/Fe(III) - H$\text{}_{2}$O$\text{}_{2}$], containing additionally the N$\text{}_{3}^{-}$, Eu(III) or Sm(III) ions, we found that the Eu(III) or Sm(III) ions were excited as a result of energy transfer process. A mechanism of the studied reactions is proposed.

Źródło:

Acta Physica Polonica A; 1996, 90, 1; 101-108
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 9.

Tytuł:

Catalyst-Free Growth of Magnesium Oxide Whiskers and Their Characteristics

Autorzy:

Kim, H.
Kong, M.
Yang, J.

Powiązania:

https://bibliotekanauki.pl/articles/1813397.pdf

Data publikacji:

2008-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.07.-b
78.55.-m

Opis:

This study reports the production of magnesium oxide (MgO) whiskers on silicon (Si) substrates by the thermal heating of $MgB_2$ powders. We investigated the structural properties of the as-synthesized whiskers by using X-ray diffraction, transmission electron microscopy, selected area electron diffraction, and scanning electron microscopy. The product consisted of one-dimensional whiskers with a square cross-section. The whiskers had a single-crystalline cubic structure of MgO. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.39 eV and 2.91 eV. We proposed the growth of MgO whiskers to follow the vapor-solid mechanism.

Źródło:

Acta Physica Polonica A; 2008, 113, 3; 1021-1024
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 10.

Tytuł:

Identification of the IB Emission Band in Al-Doped ZnS Crystals

Autorzy:

Liem, N. Q.
Quang, V. X.
Thanh, D. X.

Powiązania:

https://bibliotekanauki.pl/articles/1945436.pdf

Data publikacji:

1996-05

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.55.Et

Opis:

Time-resolved luminescence spectroscopy and thermal lensing techniques are applied to the study of deep centre photoluminescence and absorption in Al-doped ZnS crystals, which are as-grown or heat treated in different Zn rich or S rich atmospheres. A blue emission band peaking at 2.89 eV has been identified as IB band in all the mentioned crystals. Parameters of the IB band at 300 K, 77 K and 10 K such as peak energy, half width of spectrum, radiative lifetime have been determined. The IB band exhibits some special properties such as a shift neither with increasing delay time nor with excitation intensity nor with sample temperatures as well as a superlinearly excitation intensity dependence of the luminescence. An energy diagram and electronic transitions in the IB centre are presented to explain the experimental results.

Źródło:

Acta Physica Polonica A; 1996, 89, 5-6; 717-726
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 11.

Tytuł:

Implantation of Rare-Earth Atoms into Si and III-V Compounds

Autorzy:

Kozanecki, A.
Langer, J. M.
Peaker, A. R.

Powiązania:

https://bibliotekanauki.pl/articles/1924312.pdf

Data publikacji:

1993-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.80.Jh
78.55.-m

Opis:

Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.

Źródło:

Acta Physica Polonica A; 1993, 83, 1; 59-70
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 12.

Tytuł:

$SiO_x$ Nanowires Produced on Molybdenum-Coated Si Substrates

Autorzy:

Kim, H.
Lee, J.
Yang, J.

Powiązania:

https://bibliotekanauki.pl/articles/1813396.pdf

Data publikacji:

2008-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.07.-b
78.55.-m

Opis:

We synthesized $SiO_x$ nanowires with diameters of 30-140 nm, for the first time by the simple heating of the Mo-coated Si substrates. X-ray diffraction, selected area electron diffraction, and energy-dispersive X-ray spectroscopy indicated that the nanowires were in an amorphous state, comprising Si and O only. Fitting the photoluminescence spectrum with Gaussian functions revealed that the nanowires exhibited significant photoluminescence intensities near blue and green light regions. We extensively discussed the possible growth mechanism of $SiO_x$ nanowires.

Źródło:

Acta Physica Polonica A; 2008, 113, 3; 1017-1020
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 13.

Tytuł:

Photoluminescence Studies of Aluminum Nitride Nanowires

Autorzy:

Yang, J.
Na, H.
Kim, H.
Kebede, M.
Choi, R.
Jeong, J.
Lee, C.

Powiązania:

https://bibliotekanauki.pl/articles/1505466.pdf

Data publikacji:

2011-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.07.-b
78.55.-m

Opis:

We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.

Źródło:

Acta Physica Polonica A; 2011, 119, 2; 125-127
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 14.

Tytuł:

Synthesis, Structure, Photoluminescence, and Raman Spectrum of Indium Oxide Nanowires

Autorzy:

Kim, H.
Na, H.
Yang, J.
Lee,, C.

Powiązania:

https://bibliotekanauki.pl/articles/1505485.pdf

Data publikacji:

2011-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.07.-b
78.55.-m

Opis:

Production of indium oxide $(In_2O_3)$ whiskers at a very low temperature of 650°C was reported. The synthetic route was comprised of a thermal heating process of a mixture of In and Mg powders. We have investigated the structural properties of the as-synthesized nanowires by using X-ray diffraction and scanning electron microscopy. The product consisted of one-dimensional nanowires, with a crystalline cubic structure of $In_2O_3$. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.1 eV and 2.8 eV. The peaks of the Raman spectrum were indexed to the modes being associated with cubic $In_2O_3$.

Źródło:

Acta Physica Polonica A; 2011, 119, 2; 143-145
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 15.

Tytuł:

Competition of Radiation Processes in 6H-SiC Observed by Luminescence

Autorzy:

Wysmołek, A.
Mroziński, P.
Dwiliński, R.
Vlaskina, S.
Kamińska, M.

Powiązania:

https://bibliotekanauki.pl/articles/1873137.pdf

Data publikacji:

1995-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.60.Kn

Opis:

We report on the results of photoluminescence and thermoluminescence measurements of various 6H-SiC crystals. At low temperature in all n-type samples two bands with maxima at 2.7 eV (blue) and 1.8 eV (orange) were detected. In the p-type material only blue band was observed. The measurements performed at a broad range of temperatures showed totally different behaviour of photoluminescence intensity of both bands. The presented results could be explained in the model assuming well established donor-acceptor pair recombination for the blue band emission and the conduction band - deep defect transition for the orange band. The proposed model was confirmed by thermoluminescence measurements of the orange band which showed peaks at 30 K, 80 K, 100 K, 150 K attributed to ionization of subsequent shallow donor levels.

Źródło:

Acta Physica Polonica A; 1995, 87, 2; 437-440
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 16.

Tytuł:

Effect of Preheating Temperature on Microstructure and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Spin Coating Technique

Autorzy:

Ji, Qiang-min
Wang, Ya-li
Gao, Xiao-yong
Gao, Hui
Zhai, Yao-fei

Powiązania:

https://bibliotekanauki.pl/articles/1398971.pdf

Data publikacji:

2016-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.Et
78.55.-m

Opis:

Highly-oriented ZnO thin films prepared by using low-cost technique such as sol-gel technique are of much importance to ZnO-based white light-emitting diodes. The chose of proper preheating temperature in sol-gel technique is still critical for highly-oriented ZnO thin film so far. The mechanisms for the preheating in the formation of ZnO thin film and for the reactions involved in the sol solution have not been clearly stated yet. Thus, in this work, the highly-oriented ZnO thin films were prepared on glass substrates by using sol-gel spin-coating technique. The sol solution was prepared by using the two-step method rather than usual one-step method, which facilitates the understanding of the mechanism for the reactions involved in the sol solution. The effect of the preheating temperature on the microstructure and the optical properties of the films were in particular investigated. The mechanisms for the preheating in the formation of the films and for the reactions involved in the sol solution prepared by the two-step method were also proposed in terms of the experimental results. The preheating not only enhances the volatilization of the solvent 2-methoxyethanol and the decomposition of the residual organic species, but also results into the formation of small number of ZnO particles. The preheating temperature of 300°C is most favorable for the highly-oriented ZnO thin film. Increasing the preheating temperature results into the blue shift of the absorption edges of the films. This can be explained by using the quantum-size effect. The photoluminescence spectra of the films show an UV emission at the near-band edge and a broad green-yellow emission at 470-620 nm. The former is closely related to the excitons, while the latter is to the intrinsic defect species in the film.

Źródło:

Acta Physica Polonica A; 2016, 129, 6; 1191-1196
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 17.

Tytuł:

Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity

Autorzy:

Kozanecki, A.

Powiązania:

https://bibliotekanauki.pl/articles/1929781.pdf

Data publikacji:

1993-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.80.Ih
78.55.-m

Opis:

Lattice location experiments performed on Yb- and Er-doped III-V semiconducting compounds using Rutherford backscattering and channeling have been reviewed. It has been shown that Yb atoms locate substitutionally in InP and InP-based ternary alloys, while in gallium compounds no substitutional fraction of Yb could be detected. An intense intra-4f-shell luminescence of Yb$\text{}^{3+}$ has been observed in In compounds. The photoluminescence spectra of Yb$\text{}^{3+}$ reflect local alloy disorder in InPAs and GaInP, suggesting that the Yb atoms are tetrahedrally coordinated. No Yb-related emission could be observed in gallium compounds, except a weak Yb$\text{}^{3+}$ photoluminescence in GaP. An evidence has been presented that Er atoms introduced into III-V compounds locate predominantly at interstitial positions. In GaAs they move into tetrahedral lattice sites as a result of thermal annealing at temperatures higher than 600°C. The location of Er atoms at substitutional positions is accompanied with the disappearance of the intra-4f-shell luminescence of Er$\text{}^{3+}$. The reasons of the observed correlation of luminescence properties and positions of Er and Yb atoms in zincblende lattices are discussed.

Źródło:

Acta Physica Polonica A; 1993, 84, 5; 881-888
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 18.

Tytuł:

Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs

Autorzy:

Wysmołek, A.
Łusakowski, J.

Powiązania:

https://bibliotekanauki.pl/articles/1932094.pdf

Data publikacji:

1995-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
72.20.Ht

Opis:

Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.

Źródło:

Acta Physica Polonica A; 1995, 87, 1; 261-264
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 19.

Tytuł:

Photoluminescence and Double-Crystal X-Ray Study of InGaAs/InP: Effect of Rare Earth (Dysprosium) Addition During Liquid Phase Epitaxial Growth

Autorzy:

Pödör, B.
Csontos, L.
Somogyi, K.
Vignaud, D.

Powiązania:

https://bibliotekanauki.pl/articles/1876215.pdf

Data publikacji:

1995-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
72.80.Ey

Opis:

High purity In$\text{}_{0.53}$Ga$\text{}_{0.47}$As layers were grown on semi-insulating InP:Fe substrates by liquid phase epitaxy by adding small amounts of dysprosium (rare earth) to the melt. Hall effect and photoluminescence measurements showed that the addition of Dy strongly reduced the carrier and residual donor concentration, with a concurrent shift of the excitonic luminescence toward higher energies. The observed effects are ascribed to the gettering of residual donor impurities in the melt by Dy, as well as to the effects of possible incorporation of Dy into the grown layers.

Źródło:

Acta Physica Polonica A; 1995, 87, 2; 465-468
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 20.

Tytuł:

Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Autorzy:

Kundrotas, J.
Čerškus, A.
Ašmontas, S.
Valušis, G.
Sherliker, B.
Halsall, M.
Harrison, P.
Steer, M.

Powiązania:

https://bibliotekanauki.pl/articles/1178273.pdf

Data publikacji:

2005-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.35.-y
78.55.-m

Opis:

We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.

Źródło:

Acta Physica Polonica A; 2005, 107, 2; 245-249
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 21.

Tytuł:

Synthesis and Luminescent Properties of $Eu^{3+}$ Doped Crystalline Diphosphate $Na_2ZnP_2O_7$

Autorzy:

Guerbous, L.
Gacem, L.

Powiązania:

https://bibliotekanauki.pl/articles/1418919.pdf

Data publikacji:

2012-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.20.-e
78.55.-m
78.55.Hx

Opis:

Undoped and $Eu^{3+}$-doped disodium zinc diphosphate $Na_2ZnP_2O_7$ (NZPO) single crystals are grown by the Czochralski method. X-ray diffraction, Fourier transform infrared and Raman techniques were used to check the crystallographic structure. Excitation and emission spectra were measured at room temperature and studied. The $Eu^{3+}$ ions occupy a non-centrosymmetric site with different coordination number. Very efficient energy transfer from $O-Eu^{3+}$ band state to $Eu^{3+}$ excited energy levels is highlighted.

Źródło:

Acta Physica Polonica A; 2012, 122, 3; 535-538
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 22.

Tytuł:

Spectroscopic Investigation of Rare-Earth Doped Phosphate Glasses Containing Silver Nanoparticles

Autorzy:

Amjad, R.
Sahar, M.
Ghoshal, S.
Dousti, M.
Samavati, M.
Riaz, S.
Tahir, B.

Powiązania:

https://bibliotekanauki.pl/articles/1400152.pdf

Data publikacji:

2013-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.30.Ly
78.55.-m
78.66.Jg

Opis:

Phosphate glasses having compositions $(59.5-x)P_2O_5-40MgO-xAgCl-0.5Er_2O_3$, where x=0, 1.5 mol.% is prepared using melt-quenching technique. Infrared, absorption and photoluminescence spectra of $Er^{3+}$-doped magnesium phosphate glasses have been reported. The amorphous nature of the host glass is confirmed by X-ray diffraction technique. Transmission electron microscope image confirms the existence of silver nanoparticles inside the glass matrix. The localized surface plasmon resonance band of silver is found to be located around ≈ 528 nm for the $Er^{3+}$ free sample. A frequency upconversion process from infrared to visible is observed on excitation with 797 nm radiation. Furthermore, an enhancement in the emission at 540 nm and 632 nm is found due to the local field effect of silver nanoparticles. Our findings may contribute towards the development of solid state laser and sensors.

Źródło:

Acta Physica Polonica A; 2013, 123, 4; 746-749
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 23.

Tytuł:

Physics of Solid-State Laser Materials

Autorzy:

Wojtowicz, A.

Powiązania:

https://bibliotekanauki.pl/articles/1888052.pdf

Data publikacji:

1991-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

42.55.Rz
78.50.-w
78.55.-m

Opis:

A survey of the physical properties of solid state materials activated with d$\text{}^{2}$, d$\text{}^{3}$ and d$\text{}^{8}$ transition metal ions is presented in the context of tunable laser operation. An emphasis is put on common characteristics of all three systems, like a strong electron-phonon coupling and similar electronic structures. The conditions necessary to obtain a tunable operation and to avoid an overlap of the excited state absorption and emission are formulated. It is shown that the d$\text{}^{3}$ configuration system has the largest range of allowed values of the crystal field parameter 10Dq.

Źródło:

Acta Physica Polonica A; 1991, 80, 2; 193-205
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 24.

Tytuł:

Photoluminescence Kinetics of YAG Crystals Activated with Ce, and Ce and Mg

Autorzy:

Barzowska, J.
Kubicki, A.
Grinberg, M.
Kaczmarek, S.
Łuczyński, Z.
Wojtowicz, A. J.
Koepke, Cz.

Powiązania:

https://bibliotekanauki.pl/articles/1995826.pdf

Data publikacji:

1999-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.55.-i
78.47.+p
78.55.-m

Opis:

A basic spectroscopic measurements of luminescence, absorption, luminescence excitation spectra and emission kinetic measurements on YAG crystals activated with cerium and magnesium are presented. We report that the Ce$\text{}^{3+}$ luminescence decay constant, at 65 ns, is independent of Ce concentrations (from 0.05 to 0.2%) and that it does not change with the presence or absence of the Mg co-dopant. Nevertheless, we find that under pulsed laser excitation at 290 nm the rise time in Ce luminescence time profiles is effectively shorter in the Mg co-doped samples.

Źródło:

Acta Physica Polonica A; 1999, 95, 3; 395-402
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 25.

Tytuł:

Highly Compensated GaAs Crystal Obtained by Molecular CO Doping

Autorzy:

Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.

Powiązania:

https://bibliotekanauki.pl/articles/1929707.pdf

Data publikacji:

1993-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.55.-i
78.55.-m
78.20.Jq

Opis:

GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.

Źródło:

Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 26.

Tytuł:

Near-Band-Edge Photoluminescence from Very High Quality Hexagonal ZnO Bulk Crystals

Autorzy:

Lieu, N. T. T.
Dat, D. H.
Liem, N. Q.

Powiązania:

https://bibliotekanauki.pl/articles/2035657.pdf

Data publikacji:

2003-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.35.-y
78.55.-m
78.55.Et

Opis:

The near-band-edge photoluminescence spectra of very high quality hexagonal ZnO single crystals in the temperature range between 9 and 305 K were measured. Based on the energetic positions and the evolutions of well-resolved photoluminescence lines with temperature and with excitation power density we interpret the observed photoluminescence lines as resulting from recombination of the free-exciton, bound-exciton, biexciton, inelastic exciton-exciton collision and electron-hole plasma.

Źródło:

Acta Physica Polonica A; 2003, 103, 1; 67-75
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 27.

Tytuł:

Synthesis, Characterization and Luminescence Properties οf $Sr_3WO_6:Eu^{3+}$ Phosphor

Autorzy:

Emen, F.
Altinkaya, R.
Sonmez,, S.
Kulcu, N.

Powiązania:

https://bibliotekanauki.pl/articles/1491444.pdf

Data publikacji:

2012-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.55.Hx
61.43.Gt

Opis:

$Sr_3WO_6:Eu^{3+}$ phosphor was prepared at high temperature by solid state method. The phase structure of phosphor was characterized as double perovskite structure. The cell parameters of $Sr_3WO_6:Eu^{3+}$ were determined as a = 8.361 Å, b = 8.288 Å, c = 8.211 Å, α = β = γ = 89.78°. The luminescence properties were studied. The results revealed that $Eu^{3+}$ ions show red emission about 616 nm.

Źródło:

Acta Physica Polonica A; 2012, 121, 1; 249-250
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 28.

Tytuł:

Rare Earth Centres in Mixed Compound Crystals

Autorzy:

Kozanecki, A.

Powiązania:

https://bibliotekanauki.pl/articles/1945470.pdf

Data publikacji:

1996-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.55.-i
78.55.-m
78.50.Ge

Opis:

A review of the Yb impurity related centres in mixed InP-based crystals has been presented. It is shown that Yb$\text{}^{3+}$ ions can be utilized to probe alloy disorder, both in cationic (GaInP) and anionic (InPAs) alloys. The existence of alloy disorder manifested itself in the photoluminescence spectra reflecting local atomic structure of the Yb centres. The dominant emissions have been ascribed to the Yb-P$\text{}_{4}$Ga$\text{}_{12}$ and Yb-P$\text{}_{4}$-Ga$\text{}_{11}$In complexes in GaInP and to Yb-P$\text{}_{4}$ and Yb-P$\text{}_{3}$As centres in InPAs. The excitation and relaxation mechanisms of the 4f-shell of Yb$\text{}^{3+}$ ions were also investigated. It was found that the temperature quenching of the Yb$\text{}^{3+}$ luminescence was accompanied with the appearance of two thermally activated photoluminescence bands. It is suggested that photoluminescence at an energy of 25 meV below the energy gap is due to recombination of excitons bound at Yb-related centres. Relaxation of the excited 4f-shell of Yb$\text{}^{3+}$ ions proceeds via back transfer of the excitation energy from the 4f-shell to excitons bound at Yb-centres.

Źródło:

Acta Physica Polonica A; 1996, 90, 1; 73-82
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 29.

Tytuł:

Intercalation of Layered Metal Iodides with Pyridine Evidenced by Raman Spectroscopy

Autorzy:

Preda, N.
Mihut, L.
Baibarac, M.
Baltog, I.

Powiązania:

https://bibliotekanauki.pl/articles/1807830.pdf

Data publikacji:

2009-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.20.Tx
78.30.-j
78.55.-m

Opis:

$PbI_2$, $BiI_3$, $CdI_2$ and AgI crystalline samples intercalated with pyridine have been studied by Raman spectroscopy. Comparing the Raman spectra of pristine metal iodides with those of intercalated samples we have shown the coexistence, in the host crystalline lattice, of two adsorbed forms: a physisorbed one, featured by weak forces of van der Waals type and a chemisorbed one, involving stronger forces related to an electrostatic interaction. The physisorbed form is consistent with the molecules inserted into the interlayer spaces while the chemisorbed form is represented by the molecules forming coordination complexes with the crystalline lattice cations. The crucial role in the formation of such complexes is played by the lone pair of nitrogen atom belonging to the molecules.

Źródło:

Acta Physica Polonica A; 2009, 116, 1; 81-83
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 30.

Tytuł:

Nonlinear Upconversion-Rate in Er-Doped Fibers

Autorzy:

Jaskorzyńska, B.
Sergeyev, S.
Świłło, M.
Khoptyar, D.

Powiązania:

https://bibliotekanauki.pl/articles/2015114.pdf

Data publikacji:

2001-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.20.Bh
78.55.-m
42.55.Rz

Opis:

Energy transfer between excited rare-earth ions has been widely used for realizing upconversion lasers and also recognized as a gain limiting factor in high-concentration Er-doped amplifiers. The energy transfer leads to upconversion of the excitation which for randomly distributed (not clustered) ions is called homogeneous upconversion. It was commonly assumed that the rate of homogeneous upconversion is a linear function of the population inversion N$\text{}_{2}$. However, recently published Monte Carlo simulations predict that the homogeneous upconversion rate is a nonlinear function of N$\text{}_{2}$ and that it, moreover, depends on the pump and signals rates. In this paper we review some of our experimental results confirming those predictions. We also propose a statistical, analytical model describing the observed homogeneous upconversion behavior in Er-doped fibers.

Źródło:

Acta Physica Polonica A; 2001, 99, 1; 147-153
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 31.

Tytuł:

Transient Photoconductivity and Photoluminescence in InP:Cu

Autorzy:

Stalnionis, A.
Adomavic̆ius, R.
Krotkus, A.
Marcinkevic̆ius, S.
Leon, R.
Jagadish, C.

Powiązania:

https://bibliotekanauki.pl/articles/1952097.pdf

Data publikacji:

1996-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

72.40.+w
78.47.+p
78.55.-m

Opis:

Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that doping with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.

Źródło:

Acta Physica Polonica A; 1996, 90, 5; 931-934
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 32.

Tytuł:

Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders

Autorzy:

Park, K.
Hakeem, D.
Kim, J.
Kim, Y.
Kim, S.

Powiązania:

https://bibliotekanauki.pl/articles/1398243.pdf

Data publikacji:

2018-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.55.Hx
78.55.Et

Opis:

The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.

Źródło:

Acta Physica Polonica A; 2018, 133, 4; 902-906
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 33.

Tytuł:

Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence

Autorzy:

Buczko, R.
Langer, J. M.

Powiązania:

https://bibliotekanauki.pl/articles/1929682.pdf

Data publikacji:

1993-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.35.+z
73.40.Kp
78.55.-m

Opis:

By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.

Źródło:

Acta Physica Polonica A; 1993, 84, 3; 591-594
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 34.

Tytuł:

Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC

Autorzy:

Wysmołek, A.
Baranowski, J. M.
Kamińska, M.

Powiązania:

https://bibliotekanauki.pl/articles/1934050.pdf

Data publikacji:

1995-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.20.-e
78.60.Kn

Opis:

We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.

Źródło:

Acta Physica Polonica A; 1995, 88, 5; 957-960
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 35.

Tytuł:

Polymer-oxide composites: toward new optical materials

Autorzy:

Nedilko, S.

Powiązania:

https://bibliotekanauki.pl/articles/1052642.pdf

Data publikacji:

2018-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

77.22.Ch
78.55.-m
78.66.Sq

Opis:

Brief summary concerning properties of the polymer matrix incorporated with inorganic, e.g. oxide particles, micro/nanocomposites and opportunity to use these composites as optical materials for modern optics and optoelectronic devices is presented in the work. Structure and morphology of the several sets of the new polymer micro/nanocomposites based on the microcrystalline cellulose incorporated with micro/nanoparticle of various oxides (NaNO₂, La_{1-x}Sm_{x}VO₄, La_{1-x}Eu_{x}VO₄ and K₂Eu(PO₄)(MoO₄)), were prepared by "dry" and "wet" cool pressing procedure. Morphology of these composites was described as ensemble of cellulose plates and located gains of the oxide particles. Temperature dependences of complex dielectric permittivity and luminescence properties of the composites were studied. Temperature and electromagnetic field frequency dependences of the dielectric permittivity revealed influence of oxide particles on the characteristics of the microcrystalline cellulose. Both wide band (matrix emission) and narrow lines (RE ions emission) of visible luminescence (350-750 nm range) of the composites is excited in the range 250-550 nm. The luminescence characteristics displayed effect of cellulose on the electronic system of the Sm³⁺ and Eu³⁺ ions and effect of oxide particles on the cellulose matrix was shown, too. Spectral characteristics and high intensity of luminescence showed perspectives of studied composites to be used as light converters in LED and elsewhere as optics luminescent materials.

Źródło:

Acta Physica Polonica A; 2018, 133, 4; 829-837
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 36.

Tytuł:

Structure and Properties of Microcrystalline Cellulose "Ceramics-Like" Composites Incorporated with LaVO₄:Sm Oxide Compound

Autorzy:

Nedielko, M.
Alekseev, O.
Chornii, V.
Kovalov, K.
Lazarenko, M.
Nedilko, S.
Scherbatskyi, V.
Boyko, V.
Sheludko, V.

Powiązania:

https://bibliotekanauki.pl/articles/1052560.pdf

Data publikacji:

2018-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

77.22.Ch
78.55.-m
78.66.Sq

Opis:

Composite samples based on microcrystalline cellulose matrix incorporated with micro/nanoparticles of La_{0.7}Sm_{0.3}VO₄ complex oxide were made by cool pressing procedure. Morphology, crystallinity and characteristic luminescence and dielectric properties of the composites were studied. Their morphology can be described as "ceramics-like" type, as it consists of cellulose plates and embedded oxide particles. Luminescence spectra of the composites covers the range of the whole visible light, 350-750 nm, and comprises both wide band and narrow lines, related with host and oxide luminescence, respectively. Temperature dependences of the dielectric permittivity of composites showed the impact of the oxide particles on the characteristics of the microcrystalline cellulose. An assumption was made that this influence can be affected via water molecules, hydroxyl groups or molecules of the ambient gases. Studied composites can be perspective luminescent materials for transformation of ultraviolet and violet radiation into green-red light.

Źródło:

Acta Physica Polonica A; 2018, 133, 4; 838-842
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 37.

Tytuł:

Radiative Donor-Acceptor Pair Recombination in $Tl_2Ga_2Se_3S$ Layered Single Crystals

Autorzy:

Gasanly, N.

Powiązania:

https://bibliotekanauki.pl/articles/1400493.pdf

Data publikacji:

2013-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.20.-e
71.55.-i

Opis:

The emission band spectra of $Tl_2Ga_2Se_3S$ layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW $cm^{-2}$ range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from the moderately deep donor level $E_{d}$=270 meV to the shallow acceptor level $E_{a}$=10 meV were suggested to be responsible for the observed photoluminescence band.

Źródło:

Acta Physica Polonica A; 2013, 124, 1; 128-132
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 38.

Tytuł:

Infrared Luminescence in Er and Er+O Implanted 6H SiC

Autorzy:

Kozanecki, A.
Jantsch, W.
Heis, W.
Prechtl, G.
Sealy, B. J.
Jeynes, C.

Powiązania:

https://bibliotekanauki.pl/articles/1968292.pdf

Data publikacji:

1997-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.72.Ww
71.55.-i
78.55.-m

Opis:

Photoluminescence in the neighbourhood of 1.54 μm due to the $\text{}^{4}$I$\text{}_{13}\text{}_{/}\text{}_{2}$ -$\text{}^{4}$I$\text{}_{15}\text{}_{/}\text{}_{2}$ intra-4f-shell transitions of Er$\text{}^{3+}$ ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.

Źródło:

Acta Physica Polonica A; 1997, 92, 5; 879-882
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 39.

Tytuł:

Influence of Annealing on Optical Properties of ZnO Nanorods Obtained by the Microwave-Assisted Hydrothermal Process

Autorzy:

Materska, P.
Witkowski, B.
Godlewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1185899.pdf

Data publikacji:

2016-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
61.46.-w
61.72.Cc

Opis:

Optical properties of ZnO nanorods (of different sizes, grown on two different substrates) are investigated. Nanorods were grown using microwave-assisted hydrothermal process on gallium nitride or silicon substrate. To initiate nanorods growth on a silicon substrate ZnO nucleation layer was used. ZnO nanoseeds were deposited by atomic layer deposition. For GaN substrate an epitaxial relation was observed. For both substrates nanorods show a hexagonal structure, expected for wurtzite ZnO. Results of nanorods annealing are discussed.

Źródło:

Acta Physica Polonica A; 2016, 130, 5; 1202-1204
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 40.

Tytuł:

Effect of dielectric medium anisotropy on the polarization degree of emission from a single quantum dash

Autorzy:

Mrowiński, P.
Tarnowski, K.
Olszewski, J.
Somers, A.
Kamp, M.
Höfling, S.
Reithmaier, J.
Urbańczyk, W.
Misiewicz, J.
Machnikowski, P.
Sęk, G.

Powiązania:

https://bibliotekanauki.pl/articles/1159588.pdf

Data publikacji:

2016-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.67.Hc
71.35.-y
78.55.-m

Opis:

Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.

Źródło:

Acta Physica Polonica A; 2016, 129, 1a; A-48-A-52
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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• na półce

Skocz do pozycji: 41.

Tytuł:

Exciton Magneto-Optical Study on Single Quantum Wells, Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te/Cd$\text{}_{1-x'-y}$Zn$\text{}_{x}$'Mn$\text{}_{y}$Te

Autorzy:

Takeyama, S.
Grabecki, G.
Adachi, S.
Takagi, Y.
Wojtowicz, T.
Karczewski, G.
Kossut, J.

Powiązania:

https://bibliotekanauki.pl/articles/1934045.pdf

Data publikacji:

1995-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.20.Ls
78.66.Hf

Opis:

Four-single quantum wells composed of the ternary non-magnetic compounds Cd$\text{}_{0.93}$Zn$\text{}_{0.07}$Te (well width = 13, 19, 40, 90 Å), separated by the quaternary magnetic-compound Cd$\text{}_{0.48}$Zn$\text{}_{0.04}$Mn$\text{}_{0.48}$Te on (100)GaAs substrate were grown by MBE, and exhibited clear and distinctive photoluminescence lines corresponding to each quantum well. Double luminescence peaks with closely spaced within one well were observed from 90 Å and 40 Å quantum wells. Temperature and magnetic-field study revealed characteristic luminescence features associated with a bound exciton near the interface rather than with one monolayer fluctuation.

Źródło:

Acta Physica Polonica A; 1995, 88, 5; 945-948
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 42.

Tytuł:

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

Autorzy:

Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A.

Powiązania:

https://bibliotekanauki.pl/articles/1505529.pdf

Data publikacji:

2011-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
71.35.-y
68.65.-k

Opis:

We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.

Źródło:

Acta Physica Polonica A; 2011, 119, 2; 177-179
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 43.

Tytuł:

Enhancement of the Excitonic Photoluminescence in $n^{+}$/i-GaAs by Controlling the Thickness and Impurity Concentration of the $n^{+}$ Layer

Autorzy:

Čerškus, A.
Nargelienė, V.
Kundrotas, J.
Sužiedėlis, A.
Ašmontas, S.
Gradauskas, J.
Johannessen, A.
Johannessen, E.

Powiązania:

https://bibliotekanauki.pl/articles/1505489.pdf

Data publikacji:

2011-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
71.35.-y
71.55.Eq

Opis:

This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, $N_{Si} = 10^{17} cm^{-3}$ and $N_{Si} = 10^{18} cm^{-3}$, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the $n^{+}$/i-GaAs homojunction are discussed.

Źródło:

Acta Physica Polonica A; 2011, 119, 2; 154-157
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 44.

Tytuł:

Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure

Autorzy:

Pieczarka, M.
Maryński, A.
Podemski, P.
Misiewicz, J.
Spencer, P.
Murray, R.
Sęk, G.

Powiązania:

https://bibliotekanauki.pl/articles/1185237.pdf

Data publikacji:

2016-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.67.Hc
71.35.-y
78.55.-m

Opis:

We investigate double layer InAs/GaAs quantum dots grown in the Stransky-Krastanov mode by molecular beam epitaxy. The sample consists of two layers of InAs quantum dots separated by 10 nm thick GaAs layer, where the top quantum dot layer of an improved homogeneity is covered by an InGaAs cap. This configuration has allowed for the extension of the dots' emission to longer wavelengths. We probed the carrier transfer between the states confined in a double quantum well composed of InGaAs cap and the quantum dots wetting layer to the states in the quantum dots by means of photoluminescence excitation and photoreflectance spectroscopies. Efficient emission from quantum dots excited at the double quantum well ground state energy was observed. There is also presented a discussion on the carrier injection efficiency from the capping layer to the quantum dots.

Źródło:

Acta Physica Polonica A; 2016, 129, 1a; A-59-A-61
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 45.

Tytuł:

Hydrothermal Synthesis and Microstructural, Optical Properties Characterization of $YVO_4$ Phosphor Powder

Autorzy:

Zhang, S.
Liang, Y.
Gao, X.
Liu, H.

Powiązania:

https://bibliotekanauki.pl/articles/1207386.pdf

Data publikacji:

2014-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
42.70.Hj
78.67.-n

Opis:

The phonon energy of $YVO_4$ crystal is lower than other usual compounds of salt. So it is suitable as host material for down-conversion materials. Hydrothermal method was adopted to synthesize $YVO_4$ phosphor powder with the use of yttrium oxide and sodium vanadate as raw material. The change in the relative integral intensity of the (200) and (112) diffraction peaks indicates that macroscopic stress in the lattice obviously changes with the elevated hydrothermal reaction temperature. The $YVO_4$ phosphor powder synthesized involves a certain agglomeration of small particles. The phonon vibration in the $YVO_4$ originates mainly from the internal vibrations in the vanadium-oxygen tetrahedron, in addition to the Y-O and O-H vibrations. Due to a low phonon energy of only $2.8188 × 10^{-21} J$, $YVO_4$ helps to improve the down-conversion efficiency of rare-earth ions. A bandgap value of approximately 3.8 eV for the synthesized $YVO_4$ powders leads to good absorption properties in the ultraviolet region. Upon excitation by the 320 nm ultraviolet photon, the intrinsic emission of $YVO_4$ powders is annihilated, and a broadband emission of $VO_4^{3-}$ near 450 nm is observed at room temperature. The $YVO_4$ phosphor powder synthesized at 180C exhibits the maximum photoluminescence intensity because of its excellent crystallization.

Źródło:

Acta Physica Polonica A; 2014, 125, 1; 105-110
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 46.

Tytuł:

Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

Autorzy:

Kundrotas, J.
Čerškus, A.
Valušis, G.
Lachab, M.
Khanna, S.
Harrison, P.
Linfield, E.

Powiązania:

https://bibliotekanauki.pl/articles/1813382.pdf

Data publikacji:

2008-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.67.De
71.30.+h

Opis:

We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3×$10^{12} cm^{-2}$.

Źródło:

Acta Physica Polonica A; 2008, 113, 3; 963-966
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 47.

Tytuł:

Topographical, Magnetic and Optical Studies of (II,Mn)VI Quantum Structures Grown on (Ga,Mn)As

Autorzy:

Butkutė, R.
Aleszkiewicz, M.
Janik, E.
Cywiński, G.
Wojnar, P.
Däweritz, L.
Primus, J.
De Boeck, J.
Kossut, J.

Powiązania:

https://bibliotekanauki.pl/articles/2036853.pdf

Data publikacji:

2003-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
07.79.Pk
78.55.-m

Opis:

We report on an overgrowth of quantum structures consisting of diluted magnetic semiconductor CdMnTe quantum wells with non-magnetic barriers made of CdMgTe or ZnTe on ferromagnetic MnAs and GaMnAs films by molecular beam epitaxy. Atomic force microscopy images of the quantum structures grown on MnAs demonstrated the existence of two types of regions on the surface: protruded islands with micrometric sizes, surrounded by areas of small-scale roughness. Magnetic force microscopy study of these samples revealed a magnetic domain structure only on the above mentioned islands. The (II,Mn)VI quantum wells grown on GaMnAs films exhibited relatively smooth surface, but no magnetic force microscopy signal was measurable either before or after magnetizing the sample. In the luminescence spectra of all our quantum structures the emission attributed to CdMnTe quantum wells was observed. The influence of magnetization on the luminescence line position was investigated.

Źródło:

Acta Physica Polonica A; 2003, 103, 6; 649-657
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 48.

Tytuł:

Study on Fluorescence Characteristic of a Complex Probe οf CdSe Quantum Dots Coupling with Thiazole Orange

Autorzy:

Fei, X.
Jia, G.
Wang, J.
Gu, Y.

Powiązania:

https://bibliotekanauki.pl/articles/1537765.pdf

Data publikacji:

2010-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.63.Kv
78.55.-m
78.67.-n

Opis:

CdSe quantum dots were synthesized using thioglycolic acid as stabilizer in aqueous solution under $N_{2}$. The UV-vis spectrometry and fluorescence spectra indicate that the bimodal quantum dots were formed and the optical band gaps are about 650 nm and 750 nm, respectively. The quantum dots coated with TO were prepared in room temperature, and the fluorescence characteristic was studied. The result showed that the peak shift of quantum dots fluorescence spectra can mainly be due to the change of the capping layer, resulting in the confinement energy change. This is vital for the investigating on of the forming process and mechanisms of the combination of thiazole orange dye and quantum dots.

Źródło:

Acta Physica Polonica A; 2010, 117, 6; 949-952
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 49.

Tytuł:

Structural and Optical Properties of Alternately-Strained $ZnS_{x}Se_{1-x}$/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV

Autorzy:

Evropeytsev, E.
Sorokin, S.
Gronin, S.
Sedova, I.
Klimko, G.
Sitnikova, A.
Baidakova, M.
Ivanov, S.
Toropov, A.

Powiązania:

https://bibliotekanauki.pl/articles/1376074.pdf

Data publikacji:

2014-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.67.Pt
81.07.-b
78.55.-m

Opis:

We report on design and fabrication of alternately-strained $ZnS_xSe_{1-x}$/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness ≈300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above ≈ 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III-V and II-VI materials.

Źródło:

Acta Physica Polonica A; 2014, 126, 5; 1156-1158
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 50.

Tytuł:

Characterization of ZnO Films Grown at Low Temperature

Autorzy:

Przeździecka, E.
Krajewski, T.
Wójcik-Głodowska, A.
Yatsunenko, S.
Łusakowska, E.
Paszkowicz, W.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1811975.pdf

Data publikacji:

2008-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
81.10.-h
85.30.Fg

Opis:

ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.

Źródło:

Acta Physica Polonica A; 2008, 114, 5; 1303-1310
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 51.

Tytuł:

Structural, morphological and optical study of bismuth and Zinc Co-doped yttrium oxide prepared by solvothermal and wet chemical method

Autorzy:

Bhavani, G.
Ganesan, S.

Powiązania:

https://bibliotekanauki.pl/articles/1058867.pdf

Data publikacji:

2016-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
61.05.C-
61.72.sd

Opis:

Yttrium oxide (Y₂O₃) is the most familiar yttrium compound, which is popularly known as host for ion doping of other rare earth elements. Bismuth ion (Bi³⁺) is well known as an activator and sensitizer in several particular phosphors. Zinc oxide (ZnO) nanomaterial, having a wide band gap, is one of the promising candidates for general illumination applications due to its high optical transparency and color tenability bismuth (Bi) and zinc (Zn) co-doped Y₂O₃ samples are synthesized by simple precipitation techniques like solvothermal and wet chemical methods. The prepared samples were characterized using X-ray diffraction, scanning electron microscope, energy dispersive X-ray spectra, ultraviolet-visible absorbance spectroscopy and photoluminescence spectrophotometry. Ultraviolet-visible absorption studies showed absorption only around 340 nm whereas photoluminescence shows peaks around 500 nm, 680 nm, and 1020 nm for Bi and Zn co-doped Y₂O₃. The photoluminescence spectrum shows emission in blue region (500 nm) due to Zn dopant and red and near infrared region (680 and 1020 nm) due to Bi dopant. This is a new material which can effectively work as an efficient and cheap red phosphor.

Źródło:

Acta Physica Polonica A; 2016, 130, 6; 1373-1379
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 52.

Tytuł:

Preparation and Optical Properties of Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ Highly Mismatched Alloy

Autorzy:

Avdonin, A.
Van Khoi, Le.
Pacuski, W.
Domukhovski, V.
Gałązka, R. R.

Powiązania:

https://bibliotekanauki.pl/articles/2047712.pdf

Data publikacji:

2007-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.66.Dk
61.72.Vv
78.55.-m

Opis:

The Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ alloy was prepared using a rapid crystallization technique. X-ray diffraction measurements were used to estimate the oxygen doping level. It is demonstrated that the oxygen solubility in Zn$\text{}_{1-x}$ Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ alloys greatly depends on the manganese concentration. No oxygen related effects were observed in the manganese free samples. The highest value of the oxygen molar fraction (y) achieved in the present study was 0.0023 in a sample having manganese fraction (x) of 0.056. The decrease in the alloy band gap was observed with increasing oxygen content. The oxygen-related trap level in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ was found to be strongly shifted with respect to that in ZnTe$\text{}_{1-y}$O$\text{}_{y}$. The shift is assigned to a creation of complex (Mn$\text{}_{x}$O) traps.

Źródło:

Acta Physica Polonica A; 2007, 112, 2; 407-414
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 53.

Tytuł:

Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing

Autorzy:

Prucnal, S.
Shumann, T.
Skorupa, W.
Abendroth, B.
Krockert, K.
Möller, H.

Powiązania:

https://bibliotekanauki.pl/articles/1503796.pdf

Data publikacji:

2011-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

88.40.jj
78.55.-m
78.30.Am
78.55.Ap

Opis:

Phosphorus ion implantation was used for the emitter formation in mono- and multicrystalline silicon solar cells. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and activate the doping element. Flash-lamp annealing offers here an alternative route for the emitter formation at overall low thermal budget. During flash-lamp annealing, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in annealing of the implantation damage and electrical activation of phosphorus. However, variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities. The μ-Raman spectroscopy showed that the silicon surface is amorphous after ion implantation. It could be demonstrated that flash-lamp annealing at 800°C for 20 ms even without preheating is sufficient to recrystallize implanted silicon. The highest carrier concentration and efficiency as well as the lowest resistivity were obtained after annealing at 1200°C for 20 ms both for mono- and multicrystalline silicon wafers. Photoluminescence results point towards P-cluster formation at high annealing temperatures which affects metal impurity gettering within the emitter.

Źródło:

Acta Physica Polonica A; 2011, 120, 1; 30-34
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 54.

Tytuł:

Influence of growth conditions of hydrogenated amorphous silicon carbide on optical properties of the interfacial layer in SiC-based photodevice

Autorzy:

Kaci, S.
Keffous, A.
Bozetine, I.
Trari, M.
Fellahi, O.

Powiązania:

https://bibliotekanauki.pl/articles/1070464.pdf

Data publikacji:

2016-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.68.+m
78.66.-w
78.67.Bf
78.55.-m

Opis:

The attention has been focused on the optical properties of structures of the form Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al as a function of the deposition temperature of the a-Si_{1-x}C_x:H films. The amorphous SiC:H films were obtained for different temperatures ranging from 150°C up to 500°C. By photoluminescence, blue emission from all the structures was observed at room temperature and a high emission was obtained for sample whose amorphous film was deposited at 500°C. The spectral response of Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al structures with a-Si_{1-x}C_x:H film deposited at 250°C, exhibits a maximum value at λ=950 nm while for structure with a-Si_{1-x}C_x:H film obtained at 150°C, a maximum value of λ was observed at 400 nm.

Źródło:

Acta Physica Polonica A; 2016, 130, 1; 463-465
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 55.

Tytuł:

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Autorzy:

Kundrotas, J.
Čerškus, A.
Liberis, J.
Matulionis, A.
Leach, J.
Morkoç, A.

Powiązania:

https://bibliotekanauki.pl/articles/1505526.pdf

Data publikacji:

2011-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.66.-w
71.55.Eq
71.35.-y

Opis:

A study of the photoluminescence properties of AlInN/GaN in comparison with the spectrum of the GaN active layer of the same heterostructure is presented. The strong intensity lines of the observed photoluminescence spectra are associated with the formation, enhancement and narrowing of the excitonic lines in the flat band region of the active GaN layer. The phenomena in the presence of electric field near the heterostructure interface with the two-dimensional electron system are associated with nonlinear behaviour of recombination processes.

Źródło:

Acta Physica Polonica A; 2011, 119, 2; 173-176
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 56.

Tytuł:

Luminescence and Scintillation Properties of Ce$\text{}_{x}$La$\text{}_{1-x}$F$\text{}_{3}$ Monocrystals

Autorzy:

Wojtowicz, A.
Balcerzyk, M.
Lempicki, A.

Powiązania:

https://bibliotekanauki.pl/articles/1929799.pdf

Data publikacji:

1993-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.90.+t
78.55.-m
61.80.Ed
29.40.-n

Opis:

In this communication we present our results concerning luminescence and scintillation properties of mixed cerium-lanthanum trifluoride monocrystals, Ce$\text{}_{x}$La$\text{}_{1-x}$F$\text{}_{3}$. The luminescence, luminescence excitation spectra and decays are complex, indicating the presence of Ce$\text{}^{3+}$ ions in regular and parasitic "perturbed" sites. The efficient energy transfer from regular Ce$\text{}^{3+}$ ions (emitting at 286 and 303 nm) to "perturbed" Ce$\text{}^{3+}$ ions (emitting at 340 nm) and the lack of the fast energy migration between Ce$\text{}^{3+}$ ions are responsible for non-exponential decays of the short-wavelength emission and a relatively long rise-time of the long-wavelength emission. The short-wavelength emission decays are described by the Inokuti-Hirayama model of statistically distributed donors and acceptors. Our estimates of oscillator strengths, at 13.1 × 10$\text{}^{-3}$ for Ce$\text{}^{3+}$, and 13.5 × 10$\text{}^{-3}$ for Ce$\text{}^{3+}$$\text{}_{per}$, confirm that the d-f transition on the Ce$\text{}^{3+}$ ion in a different site must be responsible for the long-wavelength emission. Calculations of the Ce-Ce and Ce-Ce$\text{}_{per}$ energy transfer rates give 7.7 × 10$\text{}^{5}$ s$\text{}^{-1}$ and 1.56 × 10$\text{}^{9}$ s$\text{}^{-1}$. The concentration of "perturbers" in good CeF$\text{}_{3}$ samples has been reduced down to about 0.11%. It is likely that the constant and significant progress made by crystal growers (Optovac Inc.) may eventually produce a superior material for applications in high energy and nuclear physics.

Źródło:

Acta Physica Polonica A; 1993, 84, 5; 963-968
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 57.

Tytuł:

Stokes Shift and Band Gap Bowing in $In_xGa_{1-x}N$ (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy

Autorzy:

Yildiz, A.
Dagdelen, F.
Aydogdu, Y.
Acar, S.
Lisesivdin, S.
Kasap, M.
Bosi, M.

Powiązania:

https://bibliotekanauki.pl/articles/1813499.pdf

Data publikacji:

2008-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.61.-r
78.20.-e
78.40.Fy
78.55.-m

Opis:

We presented the results of electrical and optical studies of the properties of $In_xGa_{1-x}N$ epitaxial layers (0.060≤x≤0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for $In_xGa_{1-x}N$ alloys is well fitted with a bowing parameter of≈3.6 eV.

Źródło:

Acta Physica Polonica A; 2008, 113, 2; 731-739
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 58.

Tytuł:

Semiconductor Spintronics: Role of the Valence-Band Holes

Autorzy:

Dargys, A.

Powiązania:

https://bibliotekanauki.pl/articles/2041626.pdf

Data publikacji:

2005-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

72.20.Jv
73.40.Gk
78.55.-m
79.90.+b

Opis:

Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors and flipping of the hole spin by an ultrashort electric field pulse. It is shown that heavy, light, and split-off holes have different spin surfaces. In general, the shape of the surface in real semiconductors may depend on the hole wave vector direction and magnitude. The concept of spin surface is used to explain very strong anisotropy of hole spin injection efficiency observed recently in ferromagnetic-semiconductor structures and in optimizing ultrafast spin switching. It was shown that, of all spin flipping mechanisms, the most effective one is associated with hole transfer between different spin surfaces in high electric fields. The less effective mechanisms are related to valence band warping and nonparabolicity. Examples of the hole spin flipping dynamics and the discussion on ultrafast control of spin in semiconductors by π-type electrical pulses are presented.

Źródło:

Acta Physica Polonica A; 2005, 107, 1; 46-55
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 59.

Tytuł:

Effect of Trisodium Citrate on the Morphology and Luminescence Properties of Hydrothermally Synthesized YVO₄ Phosphor

Autorzy:

Zhang, Sa
Liang, Yan
Gao, Xiaoyong

Powiązania:

https://bibliotekanauki.pl/articles/1398668.pdf

Data publikacji:

2016-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
61.05.cp
68.37.Hk
78.30.-j

Opis:

YVO₄ phosphors with different morphologies were synthesized by trisodium citrate (Na₃cit) surfactant-assisted hydrothermal process. Effects of molar ratio of $\text{cit}^{3-}$ to $Y^{3+}$ and pH value of reaction solution were intensively investigated on the morphologies, structures and luminescence properties of YVO₄ phosphor. The morphologies of the YVO₄ particles can be effectively controlled in strong acidic and strong alkaline environment by affecting the adsorption of $\text{cit}^{3-}$ on the (001) crystal plane of YVO₄. Strong acidic condition resulted into excessive adsorption of $\text{cit}^{3-}$ groups on the YVO₄ phosphor, which annihilated the superior luminescence of YVO₄ phosphors. On the contrary, strong alkaline condition does not result into the adsorption of $\text{cit}^{3-}$ groups. The synthesized YVO₄ phosphor without adsorption of $\text{cit}^{3-}$ groups showed superior luminescence even though the effective control of the morphology in alkaline condition is not so good as in strong acidic condition.

Źródło:

Acta Physica Polonica A; 2016, 129, 1; 79-83
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 60.

Tytuł:

Energy Level Scheme of Nd$\text{}^{3+}$ Ion in Rare Earth Oxyhalides, REOX (X = F, Cl, and Br)

Autorzy:

Beaury, L.
Hölsä, J.
Korventausta, J.
Krupa, J.-C.
Lamminmäki, R.-J.
Porcher, P.
Rahiala, H.
Säilynoja, E.

Powiązania:

https://bibliotekanauki.pl/articles/1952823.pdf

Data publikacji:

1996-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.55.-i
71.70.Ch
78.40.-q
78.55.-m

Opis:

The energy level schemes of the neodymium oxyhalides (NdOX, X = F, Cl, and Br) were studied and simulated with a phenomenological model accounting simultaneously for both the free ion interactions and the crystal field effect. The former included the electrostatic and interconfigurational interactions as well as the spin-orbit coupling. The simulations were carried out by using the data from the optical absorption and luminescence as well as the inelastic neutron scattering measured at low temperatures between 2.5 and 77 K. The values of the Slater integral F$\text{}^{2}$ describing the electrostatic interactions decrease while F$\text{}^{4}$ and F$\text{}^{6}$ increase as a function of the ionic radius of the halide anion. The strength of the spin-orbit coupling is quite the same in all three matrices. The crystal field effect - measured as the crystal field strength parameter S - is almost twice as strong in the hexagonal NdOF matrix (650 cm$\text{}^{-1}$) than in the tetragonal NdOCI or NdOBr (367 and 378 cm$\text{}^{-1}$, respectively). Similar evolution was obtained for the short-and mid-range crystal field strengths related to the spatial extension of the interaction.

Źródło:

Acta Physica Polonica A; 1996, 90, 6; 1203-1213
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 61.

Tytuł:

Light-Induced Tautomerization in Porphyrin Isomers

Autorzy:

Waluk, J.

Powiązania:

https://bibliotekanauki.pl/articles/1993612.pdf

Data publikacji:

1999-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

33.20.-t
33.50.-j
78.55.-m
78.60.-b

Opis:

Double proton tautomerization occurring in porphyrin and its structural isomers represents a special case of a chemical transformation in which the substrate and the product are form ally the same. The methods used for the investigation of this kind of processes are based on polarized spectroscopy and high-resolution techniques, such as matrix isolation. Their combined use results in obtaining information pertinent to the mechanism of proton transfer, regarding e.g., the values of proton transfer rates, structure of the tautomeric forms or the shape of the potential energy surfaces. In addition, these procedures provide a way of obtaining spectral, photophysical and structural data that would be otherwise difficult to gain. The examples include determination of transition moment directions, assignment of electronic and vibrational states, elucidation of the character of the substitutional replacement of the rare gas matrix atoms by the chromophore, and the analysis of the nature of the symmetry lowering due to the matrix cage.

Źródło:

Acta Physica Polonica A; 1999, 95, 1; 49-62
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 62.

Tytuł:

Spectroscopic Studies of Polyoxometalates and their Complexes with Lanthanide(III) Ions in Solution

Autorzy:

Lis, S.

Powiązania:

https://bibliotekanauki.pl/articles/1945607.pdf

Data publikacji:

1996-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

42.62.Hk
78.40.-q
78.40.Ha
78.55.-m

Opis:

The results of investigations related to physico-chemical properties, synthesis and structure of polyoxometalates and their lanthanide(III) complexes are briefly reviewed. Useful techniques for the verification of polyoxometalate compositions and the determination of components are compared. Complexation of metal ions, especially of lanthanide(III) ions, with polyoxometalates using absorption (in the UV-visible and the near IR region) and luminescence spectroscopy methods are presented. Absorption hypersensitive transitions of certain lanthanide(III) ions and laser-induced europium(III) ion luminescence spectroscopy are shown to be useful in complexation investigations. The significance of some polyoxometalate complexes as potential magnetic resonance imaging agents and in biological studies as antiviral agents are discussed.

Źródło:

Acta Physica Polonica A; 1996, 90, 2; 275-283
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 63.

Tytuł:

Spectroscopic Characterization of Ethylenediamine-di(o-hydroxyphenyl)acetic Acid and its Complexes with Lanthanide(III) Ions

Autorzy:

Hnatejko, Z.
Lis, S.
Elbanowski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1945635.pdf

Data publikacji:

1996-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
42.62.Hk
78.40.Ha
78.40.-q

Opis:

Binding properties of ethylenediaminedi(o-hydroxyphenyl)acetic acid (EHPG) with lanthanide(III) ions were studied using spectroscopic methods. Luminescence intensity and lifetime of the Tb(III) ion were measured in a wide pH range in order to characterize the Ln-EHPG complexation. The calculated hydration number of the Tb-EHPG system proved the replacement of six water molecules by the EHPG ligand in the inner coordination sphere of Tb(III). Energy transfer from Tb(III) to Eu(III) in the Tb(III)-EHPG-Eu(III) system indicated an existence of only monomeric form of the Tb-EHPG complex. Analysis of the ^1H NMR and FTIR spectra of the EHPG ligand and its complexes with lanthanide(III) ions confirmed the hexadentate manner of EHPG complexation with the lanthanides. The system of Dy(III)-EHPG, showing a linear dependence of luminescence intensity (λ$\text{}_{em}$=578 nm) of Dy(III) on its concentration, in the range of 3.3×10-7 to 1×10-5 mol. l-1, can be applied for spectrofluorimetric determination of Dy(III).

Źródło:

Acta Physica Polonica A; 1996, 90, 2; 353-359
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 64.

Tytuł:

Strong Photoluminescence Fluctuations in Laser-Thinned Few-Layer WS₂

Autorzy:

Bala, Ł.
Łacińska, E.
Nogajewski, K.
Molas, M.
Wysmołek, A.
Potemski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1398573.pdf

Data publikacji:

2016-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.22.-f
71.35.-y
78.55.-m
78.30.-j

Opis:

We present results of μ-Raman and μ-photoluminescence study of few-layer WS₂ flakes that have been locally thinned down by a focused laser beam. The Raman spectroscopy measurements prove that the investigated flake was locally thinned down to a monolayer. Interestingly, μ-photoluminescence experiments allowed us to observe huge intensity fluctuations at the boundary of laser-thinned region. Similar effects were found at the edges of a WS₂ bilayer flake, which has not been subjected to laser-thinning. The origin of the observed time evolution of the photoluminescence response is discussed in terms of potential fluctuations resulting from light-induced changes of the charge state of defects.

Źródło:

Acta Physica Polonica A; 2016, 130, 5; 1176-1178
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 65.

Tytuł:

New High Performance Scintillators Based on Re-Activated Insulator Materials

Autorzy:

Wojtowicz, A. J.

Powiązania:

https://bibliotekanauki.pl/articles/1945553.pdf

Data publikacji:

1996-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.90.+t
78.55.-m
61.80.Ed
29.40.-n

Opis:

In this paper we address the problem of the host-to-ion energy transfer in some RE-activated wide band gap materials excited by ionizing radiation. We argue that, despite the expected self-localization of holes, the dominant mechanism in efficient materials involves sequential trapping of both charge carriers (holes and electrons) by an activating RE-ion followed by a radiative recombination via the ion producing scintillation light. Selected experimental results are presented to illustrate how various energy transfer processes manifest themselves in the spectroscopy of scintillator materials. Experimental results combined with simple considerations are used to identify these RE-ions which are likely to act as hole or electron traps in tri- and difluorides, thus initiating the recombination sequence leading to efficient scintillation.

Źródło:

Acta Physica Polonica A; 1996, 90, 1; 215-222
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 66.

Tytuł:

Band Structure and Optical Properties οf the Layered $Hg_{3}TeCl_{4}$ Crystal

Autorzy:

Sznajder, M.
Bercha, D.
Potera, P.
Khachapuridze, A.
Panko, V.
Bercha, S.

Powiązania:

https://bibliotekanauki.pl/articles/1791361.pdf

Data publikacji:

2009-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.20.-e
78.40.-q
78.55.-m
71.20.-b

Opis:

First experimental investigations on absorption and photoluminescence of the novel $Hg_{3}TeCl_{4}$ monocrystals grown by the Bridgman method are reported. A comparison of the measurement results with theoretical band structure calculations of the $Hg_{3}TeCl_{4}$ crystal confirmed that $Hg_{3}TeCl_{4}$ is a wide-band-gap photoconductor ($E_{g}$ = 3.64 eV at 24 K) with the effective masses of charge carriers characteristic for semiconductors. Energetic position of the main photoluminescence peak and its temperature dependence indicates the presence of an additional energy level in the energy gap which takes part in the radiative recombination process and whose origin was discussed.

Źródło:

Acta Physica Polonica A; 2009, 116, 5; 950-951
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 67.

Tytuł:

Synthesis and Spectroscopic Study of Europium(III) in Heteropolyanion [EuP$\text{}_{5}$W$\text{}_{30}$O$\text{}_{110}$]$\text{}^{12-}$

Autorzy:

Lis, S.
Elbanowski, M.
But, S.

Powiązania:

https://bibliotekanauki.pl/articles/1945636.pdf

Data publikacji:

1996-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.40.Ha
78.40.-q
42.62.Hk
78.55.-m

Opis:

The heteropolyanions of Preyssler anion [NaP$\text{}_{5}$W$\text{}_{30}$O$\text{}_{110}$]$\text{}^{14-}$ and its europium-encrypted derivative [EuP$\text{}_{5}$W$\text{}_{30}$O$\text{}_{110}$]$\text{}^{12-}$ were prepared and spectroscopically characterized. The compositions of these heteropolyanions were verified based on the results from elemental and thermogravimetric analysis and the data of spectrophotometric determination of tungsten contents. Absorption in the UV-vis and IR region and luminescence spectra, as well as results of the laser-induced europium ion luminescence spectroscopy, obtained for solid complexes and their solutions, were analysed. Both in solid and solution the europium-encrypted derivative has three water molecules of hydration.

Źródło:

Acta Physica Polonica A; 1996, 90, 2; 361-366
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 68.

Tytuł:

Steady-State and Switch-Off Behavior of Upconversion in Er-Doped Fibers

Autorzy:

Khoptyar, D.
Jaskorzynska, B.

Powiązania:

https://bibliotekanauki.pl/articles/2035693.pdf

Data publikacji:

2003

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.20.Eh
78.20.Bh
78.55.-m
42.65.-k

Opis:

By measuring the metastable and the upconverted fluorescence in Er-doped fibers we determine rate of homogeneous upconversion as a function of the population inversion. The results confirm the prediction of our statistical model that at the same population inversion the upconversion rates under the steady-state and the switch-off conditions are different. The larger rate of the steady state upconversion is attributed to the pump enhanced redistribution of the excitation energy.

Źródło:

Acta Physica Polonica A; 2003, 103, 2-3; 207-210
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 69.

Tytuł:

Physical Properties of the $(Ga_{70}La_{30})_2 S_{300}$, $(Ga_{69.75}La_{29.75}Er_{0.5})_2 S_{300}$ Single Crystals

Autorzy:

Ivashchenko, I.
Halyan, V.
Kevshyn, A.
Kubatska, T.
Rosolovska, V.
Tishchenko, P.
Olekseyuk, I.

Powiązania:

https://bibliotekanauki.pl/articles/1398228.pdf

Data publikacji:

2018-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.82.Fk
71.20.Eh
78.20.-e
78.55.-m

Opis:

Using solution-melt method two single crystals, $ (Ga_{70}La_{30})_2 S_{300}$, $(Ga_{69.75}La_{29.75}Er_{0.5})_2 S_{300}$, were grown. The maxima of the luminescent radiation in the photoluminescence spectrum of the $(Ga_{69.75}La_{29.75}Er_{0.5})_2S_{300} $ single crystal correspond to the intracentric transitions in the erbium ions: $\text{}^2 H_{11//2}→ \text{}^4 I_{15//2} (525 nm) and \text{}^4 S_{3//2} → \text{}^4 I_{15//2}$ (545 nm).

Źródło:

Acta Physica Polonica A; 2018, 133, 4; 994-996
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 70.

Tytuł:

Excitation and Temperature Tuned Photoluminescence in Tl$\text{}_{2}$In$\text{}_{2}$S$\text{}_{3}$Se Layered Crystals

Autorzy:

Guler, I.
Goksen, K.
Gasanly, N. M.

Powiązania:

https://bibliotekanauki.pl/articles/2047173.pdf

Data publikacji:

2006-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.20.-b
71.20.Nr
78.20.-e
78.55.-m

Opis:

Photoluminescence spectra of Tl$\text{}_{2}$In$\text{}_{2}$S$\text{}_{3}$Se layered single crystals have been studied in the wavelength region of 535-725 nm and in the temperature range of 22-58 K. Two photoluminescence bands centered at 564 (2.20 eV, A-band) and 642 nm (1.93 eV, B-band) were observed at T = 22 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 16 to 516 mW cm$\text{}^{-2}$. These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.02 and 0.01 eV below the bottom of conduction band to acceptor levels located 0.05 and 0.44 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the photoluminescence spectra, respectively.

Źródło:

Acta Physica Polonica A; 2006, 110, 6; 823-831
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 71.

Tytuł:

Controlling the biexciton-exciton cascade kinetics in a quantum dot via coupling to a microcavity optical mode

Autorzy:

Sęk, G.
Krizhanovskii, D.
Kulakovskii, V.
Reitzenstein, S.
Kamp, M.

Powiązania:

https://bibliotekanauki.pl/articles/1160147.pdf

Data publikacji:

2016-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.67.Hc
71.35.-y
78.55.-m
42.50.Pq

Opis:

The luminescence of single and two exciton states in a quantum dot embedded in the active layer of a micropillar cavity has been investigated. Temperature tuning has been used to bring the energy states of the quantum dot and the cavity into resonance. Studying the resonance behavior of the exciton and biexciton transitions with cavity mode revealed a similar Purcell effect for both lines. The cavity-induced changes of the respective radiative lifetimes have been shown to allow for controlling the ratio between the single and two exciton occupation and their relative emission rates in a single quantum dot.

Źródło:

Acta Physica Polonica A; 2016, 129, 1a; A-44-A-47
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 72.

Tytuł:

Control of Valence-Band Hole Spin by Electric Field

Autorzy:

Dargys, A.

Powiązania:

https://bibliotekanauki.pl/articles/2037172.pdf

Data publikacji:

2004-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

72.20.Jv
73.40.Gk
78.55.-m
79.90.+b

Opis:

Coherent properties of the hole spin in an electric field are investigated. The tunneling between valence bands is used to control the transitions between the spin states. Extensive numerical studies using the time-dependent Schrödinger equation for valence band are presented to demonstrate the characteristic properties of the hole spin dynamics in dc, harmonic, as well as optimized electric fields for real valence bands of silicon. The paper also shows how one can connect the average hole spin with the initial hole wave function in the time-dependent Schrödinger equation.

Źródło:

Acta Physica Polonica A; 2004, 105, 3; 295-306
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 73.

Tytuł:

Light Induced Modification of Graphene Oxide Layers on GaN Basis

Autorzy:

Łopion, A.
Stobiński, L.
Pakuła, K.
Bożek, R.
Kaźmierczak, P.
Wysmołek, A.
Stępniewski, R.

Powiązania:

https://bibliotekanauki.pl/articles/1185429.pdf

Data publikacji:

2016-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.22.-f
78.55.-m
78.30.-j
07.05.Kf

Opis:

Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.

Źródło:

Acta Physica Polonica A; 2016, 130, 5; 1169-1171
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 74.

Tytuł:

Spectroscopy and Thermoluminescence of LuAlO$\text{}_{3}$:Ce

Autorzy:

Wiśniewski, D.
Drozdowski, W.
Wojtowicz, A.
Lempicki, A.
Dorenbos, P.
de Haas, J. T. M.
van Eijk, C. W. E.
Bos, A. J. J.

Powiązania:

https://bibliotekanauki.pl/articles/1945649.pdf

Data publikacji:

1996-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.90.+t
78.55.-m
61.80.Ed
29.40.-n

Opis:

The present status of the LuAlO$\text{}_{3}$:Ce scintillator is reviewed. Scintillation mechanism of this material is based on capture by Ce$\text{}^{3+}$ of holes and then electrons from their respective bands. Results of spectroscopic and thermoluminescence experiments are presented to support this model.

Źródło:

Acta Physica Polonica A; 1996, 90, 2; 377-384
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 75.

Tytuł:

Correlative optical spectroscopy and atom probe tomography

Autorzy:

Rigutti, L.

Powiązania:

https://bibliotekanauki.pl/articles/1156501.pdf

Data publikacji:

2016-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.46.-w
61.72.-y
68.65.-k
78.55.-m
78.67.-n

Opis:

This lecture will introduce and revise recent experimental developments on correlative laser-assisted atom probe tomography and optical spectroscopy, with a particular attention to the domain of semiconductor nanostructures. The main goal of correlative microscopy is to gain a deeper insight in materials science studies. For the materials scientist, indeed, the possibility of establishing a link between optical spectroscopic properties of a given system and the reconstruction of its 3D structure and composition by atom probe tomography yields an unprecedented insight into the complex influence of the structure on the electronic states and on the optical transitions characterizing the system. This lecture will therefore revise the different approaches by which it is possible to correlate optical spectroscopy experiments - in particular micro-photoluminescence with atom probe tomography and, possibly, with transmission electron microscopy. Dedicated sample preparation protocols and recent case studies will be reported. Finally, a perspective approach will be introduced, in which the same femtosecond laser pulse could be exploited not only for triggering ion evaporation, but also photon emission in situ in the atom probe itself.

Źródło:

Acta Physica Polonica A; 2016, 129, 1a; A-7-A-25
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 76.

Tytuł:

The Effects of Nonstoichiometry on Optical Properties of Oxide Nanopowders

Autorzy:

Šćepanović, M.
Grujić-Brojčin, M.
Dohčević-Mitrović, Z.
Vojisavljević, K.
Srećković, T.
Popović, Z. V.

Powiązania:

https://bibliotekanauki.pl/articles/2047872.pdf

Data publikacji:

2007-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

77.84.Bw
73.63.Bd
78.67.-n
78.55.-m
78.30.-j

Opis:

In this paper we illustrate the change of optical properties of mechanically activated wurtzite ZnO powder and laser synthesized anatase TiO$\text{}_{2}$ nanopowder due to the nonstoichiometry caused by mechanical activation and/or laser irradiation in vacuum. Both of the investigated materials are widely used in optoelectronics and the examination of their optical properties under different preparation and environmental conditions is of great practical interest.

Źródło:

Acta Physica Polonica A; 2007, 112, 5; 1013-1018
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 77.

Tytuł:

Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy

Autorzy:

Böttcher, T.
Einfeldt, S.
Figge, S.
Kirchner, V.
Hommel, D.
Selke, H.
Ryder, P. L.
Bertram, F.
Riemann, T.
Christen, J.
Lunz, U.
Becker, C. R.

Powiązania:

https://bibliotekanauki.pl/articles/1969025.pdf

Data publikacji:

1998-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.35.Dv
68.65.+g
78.20.-e
78.55.-m
78.55.Cr

Opis:

The luminescence of In$\text{}_{x}$Ga$\text{}_{1-x}$N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.

Źródło:

Acta Physica Polonica A; 1998, 94, 2; 260-264
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 78.

Tytuł:

The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

Autorzy:

Matys, M.
Miczek, M.
Adamowicz, B.
Żytkiewicz, Z.
Kamińska, E.
Piotrowska, A.
Hashizume, T.

Powiązania:

https://bibliotekanauki.pl/articles/1492736.pdf

Data publikacji:

2011-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
71.35.-y
73.20.-r
71.55.-i
02.70.Dh

Opis:

The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from $10^{15}$ to $10^{19}$ photon $cm^{-2} s^{-1}$) for n-GaN samples with various surface passivating layers $(Al_2O_3, SiO_2)$.

Źródło:

Acta Physica Polonica A; 2011, 120, 6A; A-073-A-075
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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• na półce

Skocz do pozycji: 79.

Tytuł:

Optical Characterization of Laser-Synthesized Anatase $TiO_{2}$ Nanopowders by Spectroscopic Ellipsometry and Photoluminescence Measurements

Autorzy:

Šćepanović, M.
Grujić-Brojčin, M.
Mirić, M.
Dohčević-Mitrović, Z.
Popović, Z.

Powiązania:

https://bibliotekanauki.pl/articles/1795613.pdf

Data publikacji:

2009-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.07.Wx
78.67.Bf
73.22.-f
07.60.Fs
78.55.-m

Opis:

Nanosized titania $(TiO_{2})$ is synthesized by laser-induced pyrolysis using $TiCl_{4}$ as a liquid precursor. X-ray diffraction and Raman scattering confirmed anatase structure of $TiO_{2}$ nanocrystals. The dielectric function ε(ω) of $TiO_{2}$ nanopowders has been determined by spectroscopic ellipsometry in the energy range from 1.5 to 6 eV at room temperature. The features observed in ε(ω) have been fitted to analytical line shapes by using the second derivatives of experimental spectra. The energies corresponding to different interband electronic transitions have been determined. Photoluminescence measurements have been carried out in vacuum for T = 20 K and T = 300 K. Under laser irradiation with sub-band gap photon energy, anatase nanocrystals have displayed strong visible photoluminescence emission. In this broad photoluminescence band different variations of line shape and position with excitation energy and temperature are observed for nanopowders with different crystallite size, pointing out to the various electronic transitions mediated by defect levels within the band gap.

Źródło:

Acta Physica Polonica A; 2009, 116, 4; 603-606
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 80.

Tytuł:

The Influence of Metastabilities on the Luminescence in the Cu(In,Ga)Se$\text{}_{2}$ Solar Cells

Autorzy:

Prządo, D.
Igalson, M.
Bacewicz, R.
Edoff, M.

Powiązania:

https://bibliotekanauki.pl/articles/2047374.pdf

Data publikacji:

2007-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.-m
78.60.Fi
73.40.Lq
73.61.Le
72.40.+w

Opis:

Photoluminescence and electroluminescence spectra of the absorber layer in ZnO/CdS/Cu(In,Ga)Se$\text{}_{2}$ solar cells were measured. Their dependence on temperature, excitation intensity and applied voltage were studied. Electroluminescence measurements were used to investigate light- and bias-induced metastabilities in the absorber of the cells. We showed that metastable changes of defect distributions, which produce an effect on the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se$\text{}_{2}$ material, affect also the luminescence yield. The dependence of the intensity and shape of the electroluminescence spectra on the state of the sample is observed. These results fit well into the theoretical calculations of Lany and Zunger model showing that divacancy complex (V$\text{}_{Se}$-V$\text{}_{Cu}$) is responsible for metastable changes observed in ZnO/CdS/Cu(In,Ga)Se$\text{}_{2}$-based solar cells. We conclude that during light soaking or/and forward bias the probability of nonradiative recombination is decreased.

Źródło:

Acta Physica Polonica A; 2007, 112, 2; 183-189
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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• na półce

Skocz do pozycji: 81.

Tytuł:

Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers

Autorzy:

Borysiuk, J.
Wysmołek, A.
Bożek, R.
Strupiński, W.
Baranowski, J.

Powiązania:

https://bibliotekanauki.pl/articles/1811916.pdf

Data publikacji:

2008-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.37.Lp
78.55.-m
61.72.Nn
68.65.Fg
61.72.up

Opis:

Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.

Źródło:

Acta Physica Polonica A; 2008, 114, 5; 1067-1072
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 82.

Tytuł:

Resonant Cavity Enhanced Photonic Devices

Autorzy:

Bugajski, M.
Muszalski, J.
Ochalski, T.
Kątcki, J.
Mroziewicz, B.

Powiązania:

https://bibliotekanauki.pl/articles/2030303.pdf

Data publikacji:

2002-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.30.Fs
78.66.Fd
78.55.-m
78.67.De
78.45.+h
78.47.+p

Opis:

In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In$\text{}_{x}$Ga$\text{}_{1-x}$As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.

Źródło:

Acta Physica Polonica A; 2002, 101, 1; 105-118
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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• na półce

Skocz do pozycji: 83.

Tytuł:

Excited State Absorption and Thermoluminescence in Ce and Mg Doped Yttrium Aluminum Garnet

Autorzy:

Wiśniewski, K.
Koepke, Cz.
Wojtowicz, A. J.
Drozdowski, W.
Grinberg, M.
Kaczmarek, S. M.
Kisielewski, J.

Powiązania:

https://bibliotekanauki.pl/articles/2007834.pdf

Data publikacji:

1999-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.Hx
78.55.-m
78.60.Kn
73.50.Gr
29.40.Mc
78.20.-e
78.20.Wc
78.40.-q

Opis:

In this paper we report preliminary results of optical studies on Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$ (YAG) crystals codoped with Ce and Mg. By using measurements of luminescence, absorption, and luminescence excitation spectra we demonstrate that although the basic features introduced to the YAG host by the Ce-doping remain intact, the Mg-codoping imposes some significant changes on other properties of the material. These changes are potentially important for laser and/or scintillator applications of YAG:Ce and are due, most likely, to modifications of defect populations in the material. We characterize them by using the techniques of thermoluminescence and excited state absorption under excimer laser pumping. These techniques, interestingly, yield results that seem inconsistent. While the thermoluminescence signal of the Mg-doped sample is strongly reduced, suggesting that trap concentrations in the presence of Mg are suppressed, the excited state absorption signal, which we also relate to the traps, is higher. We offer a tentative explanation of this contradiction between the two experiments that involves a massive transfer of electrons from the Mg-related defects to the excited state absorption centers caused by the excimer pump itself.

Źródło:

Acta Physica Polonica A; 1999, 95, 3; 403-412
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 84.

Tytuł:

Vibration and Luminescence Spectroscopic Investigations of the Alkali Rare Earth Double Phosphates M$\text{}_{3}$(RE,Eu)(PO$\text{}_{4}$)$\text{}_{2}$ (M=K, Rb; RE=La, Gd)

Autorzy:

Kloss, M.
Schwarz, L.
Hölsä, J. P. K.

Powiązania:

https://bibliotekanauki.pl/articles/1995573.pdf

Data publikacji:

1999-03

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.50.-f
61.66.Fn
63.20.-e
71.20.Dg
71.20.Eh
71.70.-d
78.30.-j
78.55.-m

Opis:

The room temperature IR- and Raman spectra of the different M$\text{}_{3}$RE(PO$\text{}_{4}$)$\text{}_{2}$ (M = K, Rb; RE = La, Eu, Gd) double phosphates were analysed and used to interpret the vibronic side band structure in the photoluminescence spectra. The intraconfigurational 4f-4f electronic transitions in the photoluminescence spectra of the Eu$\text{}^{3+}$ doped M$\text{}_{3}$RE(PO$\text{}_{4}$)$\text{}_{2}$ were analysed in detail. The crystal field fine structure of the $\text{}^{5}$D$\text{}_{0}$ → $\text{}^{7}$F$\text{}_{J}$ (J=0-4) transitions was analysed accounting for the information on the crystal structure. The effect of the temperature as well as the alkali host cation was evaluated. Finally, a preliminary crystal field energy level scheme for the $\text{}^{7}$F$\text{}_{J}$ (J=0-4) ground term was deduced from the analysis of the photo-luminescence as well as IR- and Raman spectra.

Źródło:

Acta Physica Polonica A; 1999, 95, 3; 343-349
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 85.

Tytuł:

Measuring the Energy Landscape in Single Semiconductor Nanowires

Autorzy:

Smith, L.
Jackson, H.
Yarrison-Rice, J.
Jagadish, Ch.

Powiązania:

https://bibliotekanauki.pl/articles/1419516.pdf

Data publikacji:

2012-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.22.-f
73.43.Fj
73.50.Gr
73.50.Pz
73.63.-b
78.30.Fs
78.35.+c
78.55.-m
78.67.-n

Opis:

With the ability to design and control the physical structure of nanostructures to tune their electronic properties, it is increasingly important to measure the electronic structure of single nanostructures. Here we describe a number of experimental techniques for measuring the electronic structure of single semiconductor nanowires. The advantages, disadvantages and limitations of these methods will be described.

Źródło:

Acta Physica Polonica A; 2012, 122, 2; 316-320
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 86.

Tytuł:

Ion and Electron Beam Induced Luminescence οf Rare Earth Doped YAG Crystals

Autorzy:

Gawlik, G.
Sarnecki, J.
Jóźwik, I.
Jagielski, J.
Pawłowska, M.

Powiązania:

https://bibliotekanauki.pl/articles/1504113.pdf

Data publikacji:

2011-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.60.Hk
52.59.Bi
79.20.Rf
61.80.Lj
41.75.Ak
41.75.Cn
61.72.S-
61.72.-y
29.40.-n
77.84.Bw
79.60.Ht
87.53.Bn
78.55.-m
78.60.-b
77.55.Px
77.55.-g
25.40.Lw

Opis:

The aim of this work was the evaluation of ion-beam induced luminescence for the characterization of luminescent oxide materials containing rare earth elements. The yttrium aluminium garnet epilayers doped with Nd, Pr, Ho, and Tm atoms were used. The ion-beam induced luminescence spectra were excited using 100 keV $H_2^{+}$ ion beam and were recorded in the wavelengths ranging from 300 nm up to 1000 nm. The separate parts of the surface of the same samples were used for ion-beam induced luminescence and cathodoluminescence experiments. Cathodoluminescence spectra have been recorded in the range from 370 nm up to 850 nm at 20 keV e-beam in scanning electron microscope equipped with a grating spectrometer coupled with a photomultiplier. The observed narrow ion-beam induced luminescence lines can be ascribed to the well known radiative transitions in the rare-earth ions in the YAG crystals. The cathodoluminescence spectra reveal essentially the same emission lines as ion-beam induced luminescence. The decrease of the ion-beam induced luminescence lines intensity has been observed under the increasing ion fluences. The ion-beam induced luminescence may be used for characterization of transparent luminescent materials as an alternative method for cathodoluminescence and can be especially useful for observation of ion-beam damage formation in crystals.

Źródło:

Acta Physica Polonica A; 2011, 120, 1; 181-183
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 87.

Tytuł:

Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells

Autorzy:

Baranowski, M.
Kudrawiec, R.
Latkowska, M.
Syperek, M.
Misiewicz, J.

Powiązania:

https://bibliotekanauki.pl/articles/1403636.pdf

Data publikacji:

2012-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.Cr
78.20.Bh
78.55.Qr

Opis:

Model of hopping excitons is applied to study the carrier dynamics in GaInNAs/GaAs quantum well system. Impact of parameters describing localizing states (i.e., an average energy and density) on carrier dynamics in GaInNAs material is investigated theoretically. It is shown how those parameters affect the quantities that can be extracted from time resolved photoluminescence experiments. It is shown that obtained simulations can be very helpful in the interpretation of the experimental data.

Źródło:

Acta Physica Polonica A; 2012, 122, 6; 1022-1025
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 88.

Tytuł:

Effects of Alkali Metallization on the Luminescence Degradation of Porous Silicon

Autorzy:

Kayahan, E.
Özer, M.
Oral, A.

Powiązania:

https://bibliotekanauki.pl/articles/1491506.pdf

Data publikacji:

2012-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.Ap
78.55.Mb

Opis:

In this study, change in the intensity and stability of photoluminescence obtained by porous silicon were investigated with illumination time and metallization state. The porous silicon samples were metallized by immersing into solutions containing 3 mM $LiNO_3,$ $KNO_3$ and $NaNO_3$ metal salts using immersing plating method. The surface bond configurations of porous silicon were monitored by the Fourier transmission infrared spectroscopy and the results showed that the surfaces of the samples were oxidized after the metallization. The photoluminescence intensity increased after certain critical immersion times and photoluminescence spectrum shifted towards the high energy region after the metallization. Photoluminescence intensity of metallized porous silicon samples was more stable than as-anodized porous silicon samples. The experimental results suggested the possibility that oxygen and/or alkali metal (Li, K and Na) passivation of porous silicon surface could be a suitable way to obtain an efficient and stabilized photoluminescence.

Źródło:

Acta Physica Polonica A; 2012, 121, 1; 281-283
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 89.

Tytuł:

Surface-Coated CdS Nanocrystals

Autorzy:

Fernandez, J.
de Souza-Parise, M.
Morais, P.

Powiązania:

https://bibliotekanauki.pl/articles/1399521.pdf

Data publikacji:

2013-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.30.Fs
78.40.Fy
78.55.Et
78.67.Bf
78.70.Ck

Opis:

CdS nanocrystals were prepared using a standard colloidal route (co-precipitation chemical reaction) whereas modulation of the optical and structural properties was realized via surface coating the nanocrystals with ethylene glycol molecules using an in situ procedure. The as-produced nanocrystals were characterized by X-ray diffraction, Raman spectroscopy, UV-absorption measurements and photoluminescence. The nanocrystal quality was revealed by the spectroscopic data, though the final product presents a mixture of both zinc blende (cubic) and wurtzite (hexagonal) phases. The X-ray data indicated that the concentration of the ethylene glycol used during the synthesis process modulates the nanocrystal size and the crystal phase of the end material.

Źródło:

Acta Physica Polonica A; 2013, 124, 1; 108-111
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 90.

Tytuł:

Charge Transfer States of Transition Metal and Rare Earth Ions: Their Role in Recombination Processes

Autorzy:

Godlewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1929777.pdf

Data publikacji:

1993-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.35.+z
78.55.Cr
78.55.Et

Opis:

Center ionization accompanied by carrier localization at the center by virtue of a short-range or a long-range Coulomb attractive potential is discussed. The role of charge transfer states in recombination processes is described. The source of carrier attractive potential is explained and a simple theoretical model is presented allowing to predict the nature (either electron or hole attractive) of this potential. The probability of different possible recombination paths is also analyzed.

Źródło:

Acta Physica Polonica A; 1993, 84, 5; 849-855
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 91.

Tytuł:

Hopping Excitons in GaInNAs - Simulation οf Micro- and Macrophotoluminescence Spectra

Autorzy:

Baranowski, M.
Latkowska, M.
Kudrawiec, R.
Misiewicz, J.

Powiązania:

https://bibliotekanauki.pl/articles/1492914.pdf

Data publikacji:

2011-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.66.Fd
78.55.Cr
78.20.Bh

Opis:

Model of hopping excitons has been applied to explain the origin of sharp lines observed in microphotoluminescence spectra of GaInNAs layers. It has been shown that shape of the micro- and macrophotoluminescence spectra results from the exciton hopping between localizing centers and this phenomenon is responsible for the observation of sharp lines in microphotoluminescence experiment. In addition, the influence of different model parameters on photoluminescence spectra and their characteristic parameters such as the Stokes shift and full width at half maximum has been investigated.

Źródło:

Acta Physica Polonica A; 2011, 120, 5; 899-901
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 92.

Tytuł:

Electroluminescence from Rare Earth Activated Materials - New Concepts

Autorzy:

Godlewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1929609.pdf

Data publikacji:

1993-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.55.Eq
71.55.Gs
78.50.Ge

Opis:

The recent progress in the field of thin film electroluminescence devices is reviewed. The mechanisms responsible for rare earth excitation in high electric field electroluminescence structures are explained. A new mechanism including rare earth ionization is described. Processes limiting electroluminescence efficiency are also discussed.

Źródło:

Acta Physica Polonica A; 1993, 84, 3; 435-444
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 93.

Tytuł:

Ionization Energies of RE Ions in wide Bandgap Sulphides

Autorzy:

Świątek, K.
Godlewskl, M.

Powiązania:

https://bibliotekanauki.pl/articles/1879958.pdf

Data publikacji:

1991-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.55.Gs
78.55.Et

Opis:

An analysis of rare earth (RE) energy level positions in wide bandgap sulphides is presented. It is shown that the Jörgensen's refined spin-pairing energy theory (RESPET) predicts correctly the photo-ionization (PI) energy of Sm in ZnS.

Źródło:

Acta Physica Polonica A; 1991, 79, 2-3; 247-250
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 94.

Tytuł:

Hydrogen Tuning of (InGa)(AsN) Optical Properties

Autorzy:

Baldassarri H. v. H., G.
Ranalli, F.
Bissiri, M.
Gaspari, V.
Polimeni, A.
Capizzi, M.
Nucara, A.
Geddo, M.
Fischer, M.
Reinhardt, M.
Forchel, A.

Powiązania:

https://bibliotekanauki.pl/articles/2028813.pdf

Data publikacji:

2001-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.66.Fd
71.55.Eq
78.55.Cr

Opis:

The effects of atomic hydrogen irradiation on the optical properties of (InGa)(AsN) single quantum wells investigated by means of photoluminescence spectroscopy. For increasing hydrogen dose, the photoluminescence band peak energy of each nitrogen-containing sample blue-shifts and for high hydrogen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band line width and by a decrease in the photoluminescence efficiency. Thermal annealing at 550ºC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpretation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading most likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.

Źródło:

Acta Physica Polonica A; 2001, 100, 3; 373-378
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 95.

Tytuł:

Optical Properties of ZnCoO Films and Nanopowders

Autorzy:

Wolska, E.
Łukasiewicz, M.
Fidelus, J.
Łojkowski, W.
Guziewicz, E.
Godlewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1791349.pdf

Data publikacji:

2009-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.55.Ln
78.55.Et
81.07.Wx
61.72.uf
78.66.Hf

Opis:

ZnCoO is one of the most studied and promising semiconductor materials for spintronics applications. In this work we discuss optical and electrical properties of ZnCoO films and nanoparticles grown at low temperature by either atomic layer deposition or by a microwave driven hydrothermal method. We report that doping with cobalt quenches a visible photoluminescence of ZnO. We could observe a visible photoluminescence of ZnO only for samples with very low Co fractions (up to 1%). Mechanisms of photoluminescence quenching in ZnCoO are discussed. We also found that ZnO films remained n-type conductive after doping with Co, indicating that a high electron concentration and cobalt 2+ charge state can coexist.

Źródło:

Acta Physica Polonica A; 2009, 116, 5; 918-920
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 96.

Tytuł:

Luminescence and Photoconductivity of Cerium Compounds

Autorzy:

Yen, W. M
Basun, S.
Happek, U.
Raukas, M.

Powiązania:

https://bibliotekanauki.pl/articles/1945563.pdf

Data publikacji:

1996-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

72.40.+w
78.50.Ec
78.55.Hx

Opis:

The study of the luminescence properties of rare earth doped systems historically focuses on systems which exhibit strong luminescence. More recently, extensive studies on materials with high quantum efficiency are in part motivated by the search for new phosphor and scintillator materials. However, a thorough study of certain systems which show very low quantum yield will certainly lead to a better understanding of phosphor materials and rare earth systems in general. As an example of recent studies which address both the fundamental question of relaxation processes in rare earth doped systems and phosphor applications we present studies on cerium-doped lutetium oxide crystals which are characterized by a complete quenching of the 5d-4f luminescence and compare its optical properties to that of very efficient cerium doped phosphor material, lutetium oxyorthosilicate. To find the mechanisms which lead to the different quantum efficiency in these systems, extensive absorption, photoexcitation and photoconductivity studies were performed on single crystals. We demonstrate that the radically different emission properties of the investigated systems originate in small but crucial differences in the location of the emitting 5d level of the cerium ion with respect to the conduction band of the host - a general result which can be applied to a broad range of materials.

Źródło:

Acta Physica Polonica A; 1996, 90, 2; 257-266
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 97.

Tytuł:

Weak Ferromagnetism of Fe Intercalated Fullerides

Autorzy:

Byszewski, P.
Diduszko, R.
Baran, M.

Powiązania:

https://bibliotekanauki.pl/articles/1929859.pdf

Data publikacji:

1994-02

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.20.Ls
76.70.Hb
78.55.Kz

Opis:

The magnetic properties of C$\text{}_{60}$Fe$\text{}_{x}$ resemble spin glass with the freezing onset above 200 K. The unusual magnetization behavior at intermediate temperatures is ascribed to bonds reorganization.

Źródło:

Acta Physica Polonica A; 1994, 85, 2; 297-302
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 98.

Tytuł:

Fine Structure of Neutral Excitons in Single GaAlAs Quantum Dots

Autorzy:

Molas, M.
Gołasa, K.
Piętka, B.
Potemski, M.
Babiński, A.

Powiązania:

https://bibliotekanauki.pl/articles/1403612.pdf

Data publikacji:

2012-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.Cr
78.67.Hc

Opis:

Optical anisotropy of neutral excitons in GaAlAs/AlAs quantum dots is investigated. Low-temperature polarization-sensitive photoluminescence measurements of single quantum dots are performed. It is found that neutral excitons (X) in the quantum dots exhibit a fine structure splitting. The fine structure splitting ranges from 10 μeV to 100 μeV and correlates with the X energy. The polarization axis of the fine structure splitting is well oriented along [110] crystallographic direction of a substrate. The orientation is attributed to the elongation of GaAlAs/AlAs quantum dots in the [110] direction of the substrate.

Źródło:

Acta Physica Polonica A; 2012, 122, 6; 988-990
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 99.

Tytuł:

Optical Properties of InAs Quantum Dots

Autorzy:

Willander, M.
Zhao, Q. X.
Jacob, A. P.
Wang, S. M.
Wei, Y. Q.

Powiązania:

https://bibliotekanauki.pl/articles/2035579.pdf

Data publikacji:

2002

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.67.Hc
78.55.Cr

Opis:

InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.

Źródło:

Acta Physica Polonica A; 2002, 102, 4-5; 567-576
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

Artykuł

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Skocz do pozycji: 100.

Tytuł:

Dynamics of Light Emission in CdMnS Nanoparticles

Autorzy:

Godlewski, M.
Yatsunenko, S.
Drozdowicz-Tomsia, K.
Goldys, E. M.
Phillips, M. R.
Klar, P. J.
Heimbrodt, W.

Powiązania:

https://bibliotekanauki.pl/articles/2043717.pdf

Data publikacji:

2005-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.07.Wx
78.55.Et
78.47.+p
71.55.Gs
76.30.Fc
76.70.Hb

Opis:

We demonstrate coexistence of slow and fast components of photoluminescence decay of the Mn$\text{}^{2+}$ intra-shell emission in nanoparticles of CdMnS. We explain the observed decrease in PL lifetime of the Mn$\text{}^{2+}$ intra-shell transition by high efficiency of spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and free carriers. This mechanism is enhanced in nanostructures, but it is also present in bulk samples.

Źródło:

Acta Physica Polonica A; 2005, 108, 4; 681-688
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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