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    Wyświetlanie 1-28 z 28
    Tytuł:
    Damage Production in As Implanted GaAs$\text{}_{1-x}$P$\text{}_{x}$
    Autorzy:
    Krynicki, J.
    Warchoł, S.
    Rzewuski, H.
    Groetzschel, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932091.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    Opis:
    Post-implantation damage in GaAs$\text{}_{1-x}$P$\text{}_{x}$ compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10$\text{}^{13}$ -8 × 10$\text{}^{13}$ cm$\text{}^{-2}$ at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He$\text{}^{+}$ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 249-252
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature
    Autorzy:
    Krynicki, J.
    Rzewuski, H.
    Groetzschel, R.
    Claverie, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1886822.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.70.Tm
    Opis:
    Amorphization of GaAs implanted with Cd in the dose range of 2 x 10$\text{}^{13}$-1.2 x 10$\text{}^{14}$ ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 349-353
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    New Possibilities of Swift Heavy Ion Implantation in Material Science and Technology
    Autorzy:
    Słowiński, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011021.pdf
    Data publikacji:
    1999-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.80.Jh
    Opis:
    We summarise briefly the advantages of swift heavy ions (≈ 1 MeV/u) application to analysis and treating of solids in order to modify their properties. As an illustration some examples of this application are quoted.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 2; 239-244
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Implantation of Rare-Earth Atoms into Si and III-V Compounds
    Autorzy:
    Kozanecki, A.
    Langer, J. M.
    Peaker, A. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924312.pdf
    Data publikacji:
    1993-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    78.55.-m
    Opis:
    Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 1; 59-70
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Ion-Matter Interaction with Swift Heavy Ions in the Light of Inelastic Thermal Spike Model
    Autorzy:
    Toulemonde, M.
    Dufour, C.
    Paumier, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044665.pdf
    Data publikacji:
    2006-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Az
    61.80.Jh
    Opis:
    A description of the inelastic thermal spike model is presented in order to correlate the energy deposited by swift heavy ions to the nanometric matter transformation induced in inorganic metallic and insulating materials. Knowing that insulator is more sensitive than metallic material and that amorphous material is in general more sensitive than a crystalline one, it appears evident that the electron-phonon coupling constant g plays a key role. It will be shown that in metallic material we are able to describe different phenomena with the same value of g: for example, track formation with defect annealing or sputtering of atoms. In insulators the emphasis is made on results obtained for amorphizable materials like SiO$\text{}_{2}$ quartz and for non-amorphizable ionic crystals like CaF$\text{}_{2}$. Assuming that tracks result from a transient thermal process, a quantitative development of the model is proposed using the electron-atom mean free pathλ (inversely proportional to the square root of g) as a free parameter. With this parameter it is possible to quantitatively describe track radii in a wide range of ion velocities - whatever the bonding character of the crystal is - assuming specific criteria: tracks may result from a rapid quenching of a cylinder of matter in which the energy deposited on the lattice has overcome either the energy necessary to reach a quasi-molten phase in the case of amorphizable materials or the vaporization energy in the case of non-amorphizable materials. The evolution of theλ parameter of the considered insulator decreases versus the band gap energy. In this model, velocity effect, and a link between track formation and sputtering of atoms is established for amorphizable insulators while open questions appear for ionic crystals.
    Źródło:
    Acta Physica Polonica A; 2006, 109, 3; 311-322
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures
    Autorzy:
    Krynicki, J.
    Rzewuski, H.
    Turos, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924215.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.70.Tm
    Opis:
    Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He$\text{}^{+}$ channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 871-875
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys
    Autorzy:
    Anishchik, V.
    Poliak, N.
    Ponaryadov, V.
    Opielak, M.
    Boiko, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033770.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.80.-x
    Opis:
    The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 291-294
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Absorption Study of Ti, Cu and Fe Implanted AlN
    Autorzy:
    Borowski, M.
    Traverse, A.
    Mimault, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931700.pdf
    Data publikacji:
    1994-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.60.Dq
    61.10.Lx
    61.80.Jh
    Opis:
    Sintered AlN ceramics were implanted by Ti, Fe and Cu ions up to 1.9 × 10$\text{}^{17}$ atoms/cm$\text{}^{2}$ at mean energies of 70-110 keV in order to investigate the role of the chemical properties of the implanted species. on the phase formed during the implantation process. X-ray absorption studies were performed at room and at liquid nitrogen temperature to give information on the resulting systems and local environments of the Ti, Fe and Cu atoms. We observe the formation of TiN even for as-implanted samples, while the Cu ions aggregate to clusters. The Fe implanted samples show an intermediate behavior with both nitride formation and Fe clustering. In conclusion, the heat of formation is found to be a key parameter for the final system.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 5; 713-719
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reflectivity Spectra of CdTe Implanted at Room and Liquid Nitrogen Temperature
    Autorzy:
    Czarnecka-Such, E.
    Kisiel, A.
    Rodzik, A.
    Gołacki, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923759.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.70.Tm
    78.20.Ci
    Opis:
    The fundamental reflectivity spectra of monocrystalline CdTe, implanted with Ag ions at room temperature and with Er ions at liquid nitrogen temperature, are investigated in the 0.5-6.0 eV energy range. The analysis of the obtained spectra leads to the suggestion that temperature of implantation influences the obtained results much more decisively than values of other parameters. For the implantation carried out at 300 K no significant changes in reflectivity spectra are observed regardless of magnitude of the ion dose (up to 5 × 10$\text{}^{15}$/cm$\text{}^{2}$) and this fact, in our opinion, is due to the self-annealing effect. For samples implanted at temperature 77 K with comparable doses of ions, however, the characteristic changes of shape and intensity of reflection coefficient spectra appear. The manner of this changes gives evidence that temperature 77 K is low enough to make the radiation induced lattice defects stable (frozen-in) which are responsible for the observed behaviour of CdTe fundamental reflectivity spectra.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 781-784
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Environment of Air-Ions in Healing Chambers in the "Wieliczka" Salt Mine
    Autorzy:
    Wiszniewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400509.pdf
    Data publikacji:
    2015-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.90.+B
    82.30.Fi
    61.80.Jh
    Opis:
    The present paper is an attempt to determine the parameters of air-ions in salt mines. The investigations were aimed at determination of the degree of ionization of air in places where cosmic ray particles do not arrive at. Specifically, measurements were performed in healing chambers in salt mines where establishment of standards in the healing process should be considered as the necessity. Preliminary investigations were carried out in three salt mines using the Gerdien ion counter, with sensitivity approximately of $20 ions/cm^{3}$. The studies have shown that concentrations of small air-ion are in the range of 1200-4700 ions/$cm^{3}$ and remain persistently in adits and medicinal chambers of this mine. It means that the air in the "Wieliczka" Salt Mine is several times more saturated with air-ions as compared to the neutral atmosphere background. According to the existing standards, this ionization level is not only deemed acceptable but also optimal for humans. Because results of unsystematic measurements of ion concentrations performed in different Polish salt mines are quite similar, it is assumed that the results presented in this paper are of universal character, and that comparable ionization level in the all mines would be expected. Due to this fact, it was decided that only one of them "Wieliczka" Salt Mine (Poland) can be selected for further detailed research.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 6; 1661-1665
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
    Autorzy:
    Datsenko, L.
    Żymierska, D.
    Auleytner, J.
    Klinger, D.
    Machulin, V.
    Klad'ko, V.
    Melnik, V.
    Prokopenko, I.
    Czosnyka, T.
    Choiński, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011007.pdf
    Data publikacji:
    1999-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.10.-i
    61.72.-y
    Opis:
    The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 1; 137-142
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of the Defect Structure of $Hg_{1-x}Cd_{x}Te$ Films by Ion Milling
    Autorzy:
    Pociask, M.
    Izhnin, I.
    Ilyina, E.
    Dvoretsky, S.
    Mikhailov, N.
    Sidorov, Yu.
    Varavin, V.
    Mynbaev, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811974.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    61.80.Jh
    66.30.Lw
    Opis:
    A study of the defect structure of heteroepitaxially grown $Hg_{1-x}Cd_{x}Te$ (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ $10^{17} cm^{-3}$, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of $10^{15} cm^{-3}$, which is typical of high-quality MCT.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1293-1301
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies
    Autorzy:
    Jasiński, J.
    Liliental-Weber, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950818.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.72.Cc
    61.72.Ff
    Opis:
    2 MeV arsenic or gallium ions were used to produce nonstoichiometric buried amorphous layers in gallium arsenide. The mechanism of thermally induced regrowth of these layers was investigated using transmission electron microscopy. Low-temperature annealing resulted in nucleation of high densities of stacking faults. This was associated with the local nonstoichiometry of the amorphous layers. After annealing at high temperatures, in arsenic as well as in gallium implanted samples, two layers of voids, formed in result of vacancies clustering, were found in areas adjacent to the initial location of the amorphous-crystalline interfaces. A qualitative model of the formation of such layers was proposed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 825-828
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Range and Evolution in Swift Xe-Ion Irradiated Pure Silver Studied by Positron Annihilation Technique
    Autorzy:
    Dryzek, J.
    Horodek, P.
    Skuratov, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033261.pdf
    Data publikacji:
    2017-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.82.Bg
    78.70.Bj
    Opis:
    Variable energy positron beam and positron lifetime spectroscopy were used to study pure silver samples exposed to irradiation with swift Xe²⁶⁺ ions of energy 167 MeV with different dose: of 10¹³, 5×10¹³ and 10¹⁴ ions/cm². The positron lifetime spectroscopy revealed the presence of dislocations or vacancies associated with dislocations. They are distributed at the depth of about 6 μm, and this correlates with the ion implantation range, i.e. 9 μm. However, some defects are observed also to a depth of about 18 μm. At the depth less than 1 μm from the entrance surface strong dependence of positron diffusion length on the dose is observed. It indicates the presence of interstitial atoms and/or dislocation loops as a result of Xe²⁶⁺ ions implantation.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 5; 1585-1589
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Submicron $n^{+}$-Layers in Silicon Implanted with $H^{+}$-Ions
    Autorzy:
    Pokotilo, Y.
    Petukh, A.
    Giro, A.
    Węgierek, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504013.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    81.05.Cy
    81.40.Wx
    Opis:
    Formation of submicron $n^{+}$-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of $n^{+}$-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ $E_1$ = 2.3 eV, the pre-exponential factor $τ_{01}$ = 9.1 × $10^{-17}$ s, the ultimate concentration $N_{01}$ = (1 ± 0.1) × $10^{16} cm^{-3}$; Δ $E_2$ = 1.4 eV, $τ_{02}$ = 4.2 × $10^{-9}$ s, $N_{02}$ = (3 ± 0.1) × $10^{16} cm^{-3}$. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 129-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Dislocation Structure in LiF Crystals Irradiated with Swift Heavy Ions under Oblique Incidence
    Autorzy:
    Russakova, A.
    Akilbekov, A.
    Dauletbekova, A.
    Baizhumanov, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365710.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.88.+h
    61.80.Jh
    71.20.Dg
    Opis:
    The structural modifications of LiF irradiated with swift heavy ions under oblique angles have been investigated using AFM, SEM, chemical etching, nanoindentation and optical absorption spectroscopy. LiF crystals were irradiated under incidence angles of 30 and 70 degrees with 2.2 GeV Au (fluence 5 × $10^{11}$ ions $cm^{-2}$) and 150 MeV Kr ions (fluence $10^{12}-10^{14}$ ions $cm^{-2}$). Structural study on sample cross-sections shows that two damage regions, (1) nanostructured zone and (2) dislocation rich zone, which are typical for irradiations at normal incidence, appear also in samples irradiated under oblique angles. However in the latter case a more complex structure is formed that leads to stronger ion-induced hardening.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1257-1259
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Selective Modification of Magnetic Properties of $Co_1$ /Au/$Co_2$/Au Multilayers by He Ion Bombardment
    Autorzy:
    Urbaniak, M.
    Stobiecki, F.
    Engel, D.
    Szymański, B.
    Ehresmann, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810562.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    75.47.De
    75.70.Cn
    Opis:
    We show that in a $[Co_1//Au//Co_2//Au]_4$ multilayer, where $Co_{1(2)}$ denote Co layers of different thicknesses, a 10 keV He-ion bombardment with a 6×$10^{14}$ ions $cm^{-2}$ dose leads to changes of the easy direction from out-of-plane to in-plane in the thicker Co layers ($t_{Co2}$ = 1 nm) while the perpendicular anisotropy of the thinner Co layers ($t_{Co1}$ = 0.6 nm) is preserved. The investigated multilayers were obtained by sputtering and the thickness of the Au layers ($t_{Au}$ = 4 nm) ensured that a direct coupling between the Co layers (through pinholes) and Ruderman-Kittel-Kasuya-Yosida-like interactions were negligible.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 326-328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification
    Autorzy:
    Fedotov, A.
    Skuratov, V.
    Yurasov, D.
    Novikov, A.
    Svito, I.
    Apel, P.
    Zukowski, P.
    Fedotova, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030140.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    73.20.Fz
    73.40.-c
    61.80.Jh
    Opis:
    In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 229-232
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
    Autorzy:
    Żymierska, D.
    Godwod, K.
    Adamczewska, J.
    Auleytner, J.
    Choiński, J.
    Regiński, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030690.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.80.-x
    61.10.-i
    85.40.Ry
    Opis:
    The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 743-750
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Grain Size on Mechanical Properties of Irradiated Mono- and Polycrystalline $MgAl_2O_4$
    Autorzy:
    Jagielski, J.
    Piatkowska, A.
    Aubert, P.
    Labdi, S.
    Maciejak, O.
    Romaniec, M.
    Thomé, L.
    Jozwik, I.
    Debelle, A.
    Wajler, A.
    Boniecki, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503999.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.82.Ms
    62.20.Qp
    68.37.Ps
    Opis:
    The influence of the size of crystalline regions on mechanical properties of irradiated oxides has been studied using a magnesium aluminate spinel $MgAl_2O_4$. The samples characterized by different dimensions of crystalline domains, varying from sintered ceramics with grains of few micrometers in size up to single crystals, were used in the experiments. The samples were irradiated at room temperature with 320 keV $Ar^{2+}$ ions up to fluences reaching 5 × $10^{16} cm^{-2}$. Nanomechanical properties (nanohardness and Young's modulus) were measured by using a nanoindentation technique and the resistance to crack formation by measurement of the total crack lengths made by the Vickers indenter. The results revealed several effects: correlation of nanohardness evolution with the level of accumulated damage, radiation-induced hardness increase in grain-boundary region and significant improvement of material resistance to crack formation. This last effect is especially surprising as the typical depth of cracks formed by Vickers indenter in unirradiated material exceeds several tens of micrometers, i.e. is more than hundred times larger than the thickness of the modified layer.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 118-121
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron and Positronium Trapping in Heat Treated Zeolites (Ceramics), the Effect of Swift Heavy Ion Irradiation
    Autorzy:
    Major, P.
    Kajcsos, Zs.
    Liszkay, L.
    Zalán, P.
    Kosanović, C.
    Bosnar, S.
    Subotić, B.
    Lázár, K.
    Skuratov, V.
    Havancsák, K.
    Gordo, P.
    Ferreira Marques, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812537.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    61.43.Gt
    36.10.Dr
    61.80.Jh
    Opis:
    A systematic study of zeolite precursor gels, zeolites, and products of their recrystallization to ceramics was carried out in presence of various alkali ions. The investigation of radiation damage induced by high-energy ion beam irradiation with swift heavy ions (Bi ions at 670 MeV energy with $4×10^{12}$ ion/$cm^2$ fluence) was also included. The shortening of lifetimes found after irradiation in ceramics might probably be ascribed to interactions of o-Ps with free radicals and other quenching agents created through the ion irradiation. These lifetime-shortening interactions probably partly hide the o-Ps trapping in free volume sites.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1441-1446
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Irradiation of Living Cells with Single Ions at the Ion Microprobe SNAKE
    Autorzy:
    Hauptner, A.
    Cremer, T.
    Deutsch, M.
    Dietzel, S.
    Drexler, G. A.
    Greubel, C.
    Hable, V.
    Krücken, R.
    Löwe, R.
    Strickfaden, H.
    Dollinger, G.
    Friedl, A. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044655.pdf
    Data publikacji:
    2006-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    29.27.Eg
    61.80.Jh
    87.16.Sr
    87.50.Gi
    Opis:
    The irradiation setup at the ion microprobe SNAKE is used to irradiate living cells with single energetic ions. The irradiation accuracy of 0.55μm and respectively 0.40μm allows to irradiate substructures of the cell nucleus. By the choice of ion atomic number and energy the irradiation can be performed with a damage density adjustable over more than three orders of magnitude. Immunofluorescence detection techniques show the distribution of proteins involved in the repair of DNA double-strand breaks. In one of the first experiments the kinetics of appearance of irradiation-induced foci in living HeLa cells was examined. In other experiments a new effect was detected which concerned the interaction between irradiation events performed at different time points within the same cell nucleus.
    Źródło:
    Acta Physica Polonica A; 2006, 109, 3; 273-278
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy $\text{}^{235}U$ Ions
    Autorzy:
    Potera, P.
    Ubizskii, S.
    Sugak, D.
    Schwartz, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1550538.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.jn
    81.40.Wx
    61.80.Ba
    61.80.Jh
    61.72.J-
    Opis:
    The present work is devoted to investigation of optical absorption in pure $Gd_{3}Ga_{5}O_{12}$ (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the $\text{}^{235}U$ ions irradiation with energy 2640 MeV and a fluence $10^{9}-10^{11} cm^{-2}$. The induced absorption for $10^{9} cm^{-2}$ is caused by recharging of point defects, both growth ones and impurities. After irradiation by $\text{}^{235}U$ ions with fluences starting from $3 \times 10^{9} cm^{-2}$ the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 181-183
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of High Energy Heavy Ions on Magnetic Susceptibility of Soft Magnetic Metallic Glasses
    Autorzy:
    Pavlovič, M.
    Miglierini, M.
    Mustafin, E.
    Seidl, T.
    Šoka, M.
    Ensinger, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1366539.pdf
    Data publikacji:
    2014-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.82.Bg
    75.30.Cr
    75.47.Np
    75.50.Kj
    Opis:
    This contribution presents experimental data concerning the influence of fast heavy ions on magnetic susceptibility of VITROVAC®6025 and VITROPERM®800 metallic glasses. Samples of magnetic ribbons were irradiated with Au, and Ta ions at 11.1 MeV/A (energy per nucleon), and U ions at 5.9 MeV/A. The irradiation fluences varied from 5×$10^{10}$ up to 1.2×$10^{13}$ ions/$cm^{2}$. Relative change of the samples' magnetic susceptibility after and before irradiation was measured and evaluated as a function of the irradiation fluence. Measurements were done with a commercial Kappa-bridge device. We observed that VITROPERM® showed less change of magnetic susceptibility in comparison with VITROVAC® and this change occurred at higher fluences. This indicates higher radiation hardness of VITROPERM® compared with VITROVAC® against high-energy heavy ions. In addition, heavier ions caused larger change of magnetic susceptibility than the lighter ones and the effect could be roughly scaled with the level of electronic stopping.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 1; 54-55
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Damage Accumulation in Nuclear Ceramics
    Autorzy:
    Thomé, L.
    Moll, S.
    Jagielski, J.
    Debelle, A.
    Garrido, F.
    Sattonnay, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503742.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.80.Jh
    61.82.Ms
    61.43.-j
    61.85.+p
    68.37.Lp
    Opis:
    Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 7-12
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ion Irradiation of Oxidized FeCoZr-CaF₂ Nanocomposite Films for Perpendicular Magnetic Anisotropy Enhancement
    Autorzy:
    Kasiuk, J.
    Fedotova, J.
    Przewoźnik, J.
    Kapusta, C.
    Skuratov, V.
    Svito, I.
    Bondariev, V.
    Kołtunowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030130.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Tt
    75.30.Gw
    81.15.Jj
    81.40.Wx
    81.40.Rs
    61.80.Jh
    Opis:
    The paper is focused on the results of Xe ions irradiation of nanocomposite FeCoZr-CaF₂ films synthesized in the oxygen-containing atmosphere. Combined influence of nanoparticles partial oxidation and ion irradiation with different fluences on the crystalline structure, phase composition and magnetic anisotropy is analysed by X-ray diffraction, the Mössbauer spectroscopy and vibrating sample magnetometry. The origin of the detected progressive enhancement of perpendicular magnetic anisotropy as the result of films oxidation and irradiation is discussed in the context of formation of nanoparticles oxide shells and ion tracks along the films normal.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 206-209
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ion-Induced Modification of Structure and Magnetic Anisotropy in Granular FeCoZr-CaF₂ Nanocomposite Films
    Autorzy:
    Kasiuk, J.
    Fedotova, J.
    Przewoznik, J.
    Kapusta, Cz.
    Skuratov, V.
    Milosavljevic, M.
    Bondariev, V.
    Koltunowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402191.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Tt
    75.30.Gw
    81.15.Jj
    81.40.Wx
    81.40.Rs
    61.80.Jh
    Opis:
    The paper reports on the results of structural analysis and magnetometry of granular nanocomposite films FeCoZr-CaF₂ irradiated with Xe and Kr ions at different fluences. The observed effect of enhanced perpendicular magnetic anisotropy characterizing pristine films is discussed with respect to the irradiation regimes and structural changes of the films originating from the impact of ions.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 828-831
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
    Autorzy:
    Kulik, M.
    Kobzev, A.
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Bak-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538976.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    61.72.uf
    66.10.C-
    61.80.Jh
    81.20.-n
    82.80.Yc
    85.40.-e
    Opis:
    Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 332-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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