Defect Range and Evolution in Swift Xe-Ion Irradiated Pure Silver Studied by Positron Annihilation Technique

Variable energy positron beam and positron lifetime spectroscopy were used to study pure silver samples exposed to irradiation with swift Xe²⁶⁺ ions of energy 167 MeV with different dose: of 10¹³, 5×10¹³ and 10¹⁴ ions/cm². The positron lifetime spectroscopy revealed the presence of dislocations or vacancies associated with dislocations. They are distributed at the depth of about 6 μm, and this correlates with the ion implantation range, i.e. 9 μm. However, some defects are observed also to a depth of about 18 μm. At the depth less than 1 μm from the entrance surface strong dependence of positron diffusion length on the dose is observed. It indicates the presence of interstitial atoms and/or dislocation loops as a result of Xe²⁶⁺ ions implantation.