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Wyświetlanie 1-15 z 17
Tytuł:
Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation
Autorzy:
Figielski, T.
Mąkosa, A.
Wosiński, T.
Harness, P. C.
Singer, K. E.
Powiązania:
https://bibliotekanauki.pl/articles/1929767.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 817-819
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Traversal Time through Double-Barrier Resonant Tunneling Structure
Autorzy:
Figielski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929681.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
There are certain confusing statements in the literature concerning a physical time that is responsible for a high-frequency limit in operation of double-barrier resonant tunneling devices. Here, it is shown that an electron traversal time, introduced earlier by ours, exhibits no singularity on resonance and might be a good candidate for the quantity in question.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 587-589
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices
Autorzy:
Belyaev, A. E.
Vitusevich, S. A.
Glavin, B. A.
Mąkosa, A.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1933716.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An effect of magnetic field on a fine oscillatory structure revealed in the resonant current flowing through double-barrier resonant-tunneling devices is examined. It is found that the observed variation of the fine structure in a magnetic field parallel to the current direction differs considerably from that appearing in tunnel current flowing through single-barrier structures. Experimental results are explained in terms of the quantum interference effect arising in structures having wide spacer layers.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 675-678
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure
Autorzy:
Vitusevich, S. A.
Figielski, T.
Mąkosa, A.
Wosiński, T.
Belyaev, A. E.
Konakova, R. V.
Kravchenko, L. N.
Powiązania:
https://bibliotekanauki.pl/articles/1872937.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage characteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 377-380
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling
Autorzy:
Figielski, T.
Wosiński, T.
Mąkοsa, A.
Kaniewska, M.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1933735.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrier resonant-tunnelling devices. The competition between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 707-710
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Interface Roughness on Resonant Tunnelling in Double-Barrier Heterostructures
Autorzy:
Figielski, T.
Wosiński, T.
Mąkosa, A.
Powiązania:
https://bibliotekanauki.pl/articles/1950747.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
68.35.Ct
Opis:
We argue that the well-boundary roughness in a double-barrier heterostructure induces subsidiary subbands in the quantum well which, in turn, lead to the appearance of a broad shoulder beyond the principal resonance peak in the current-voltage characteristics.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 777-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator
Autorzy:
Figielski, T.
Wosiński, T.
Mąkosa, A.
Dobrowolski, W.
Vitusevich, S. A.
Belyaev, A. E.
Powiązania:
https://bibliotekanauki.pl/articles/1950748.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An effect of magnetic field normal to the tunnel current on the amplitude and phase of the fine oscillatory structure, discovered in the resonance current-voltage curve in double-barrier AlAs/GaAs heterostructures, has been examined. All the obtained results are consistently explained in terms of the interference of ballistic electrons, escaped from the quantum well, in the collector part of the structure.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures
Autorzy:
Belyaev, A. E.
Vitusevich, S. A.
Glavin, B. A.
Konakova, R. V.
Dobrowolski, W.
Mąkosa, A.
Kravchenko, L. N.
Gornev, E. S.
Powiązania:
https://bibliotekanauki.pl/articles/1947897.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 727-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunneling in Semiconductor Nanostructures: Physics and Devices
Autorzy:
Lüth, H.
Powiązania:
https://bibliotekanauki.pl/articles/1946763.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Gk
85.30.Mn
Opis:
Since modern semiconductor epitaxy techniques have reached the present level of perfectness, resonant tunneling through double barrier structures has attracted new interest, also with respect to novel device applications. The present review shortly discusses the underlying physical concepts of resonant tunneling through semiconductor multiple heterostructures. Beside resonant tunneling diodes also concepts for tunneling transistors are discussed. In particular, a novel 2D-2D tunnel transistor is presented, in which tunneling between two neighboring two-dimensional electron gases yields current-voltage characteristics with two types of instabilities depending on the applied gate voltage. Scaling down the lateral dimensions of a resonant tunneling diode leads to quantum boxes or dots, in which the effect of single electron tunneling with Coulomb-blockade can be observed. The underlying physics is discussed on the basis of recent experiments and theoretical calculations. Finally some possible future applications both of resonant tunneling diodes and of single electron devices are presented.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 667-679
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coherent and Sequential Tunneling in High Magnetic Field
Autorzy:
Belyaev, A. E.
Vitusevich, S. A.
Maude, D.
Portal, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/1968012.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 704-708
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Tunnelling Studies of Chaos in Quantised Systems
Autorzy:
Eaves, L.
Fromhold, T. M.
Wilkinson, P. P.
Sheard, F. W.
Powiązania:
https://bibliotekanauki.pl/articles/1967958.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
73.40.Gk
85.30.Mn
05.45.+b
Opis:
This paper gives a brief introductory overview of quantum chaology, with particular reference to recent experimental work involving the use of semiconductor heterostructures. In the presence of a tilted magnetic field, a double-barrier resonant-tunnelling device incorporating a quantum well produces a chaotic stadium for electron motion. The basic properties of this system are described. It is shown how resonant magnetotunnelling spectroscopy provides firm experimental evidence for the effect of scarred wave functions on a physically-measurable property, in this case the measured current-voltage characteristics of the device. The paper concludes with some speculations concerning for the development of this field.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 609-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots
Autorzy:
Belyaev, A. E.
Eaves, L.
Main, P. C.
Polimeni, A.
Stoddart, S. T.
Henini, M.
Powiązania:
https://bibliotekanauki.pl/articles/1969042.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 245-249
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer
Autorzy:
Wosiński, T.
Figielski, T.
Mąkosa, A.
Wrotek, S.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1992612.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
73.50.Jt
85.30.Mn
Opis:
Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 617-621
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
Autorzy:
Lewińska, S.
Gryglas-Borysiewicz, M.
Przybytek, J.
Baj, M.
Jouault, B.
Gennser, U.
Ouerghi, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047930.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
71.20.Nr
73.23.Hk
73.63.Hs
72.10.Di
85.30.Mn
73.40.Gk
Opis:
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 606-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation
Autorzy:
Papadopoulou, P.
Stavrinides, S.
Hanias, M.
Magafas, L.
Powiązania:
https://bibliotekanauki.pl/articles/1401377.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.30.Mn
85.30.Hi
Opis:
In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1349-1351
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 17

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