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Wyświetlanie 1-15 z 18
Tytuł:
Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering
Autorzy:
Bała, W.
Drozdowski, M.
Kozielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929718.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
Opis:
In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 689-692
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon
Autorzy:
Bała, W.
Głowacki, G.
Łukasiak, Z.
Drozdowski, M.
Kozielski, M.
Nossarzewska-Orłowska, E.
Brzozowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1876076.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
78.66.-w
Opis:
Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p$\text{}^{+}$ silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 445-448
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Free Carrier Concentration on Nonlinear Absorption of n-Type ZnSe Crystals
Autorzy:
Sahraoui, B.
Chevalier, R.
Nguyen Phu, X.
Rivoire, G.
Bała, W.
Powiązania:
https://bibliotekanauki.pl/articles/1952689.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Jq
78.30.Hv
Opis:
The dependence of nonlinear absorption at 532 nm of n-type ZnSe crystals upon annealing temperature and free carrier concentration is reported. The nonlinear optical absorption as well as the efficiency of degenerate four wave mixing of ZnSe are investigated. It is found that the magnitude of the nonlinear absorption decreases with an increase in the electron concentration. The nonlinear refractive index change is estimated.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1070-1074
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Investigation of Optical Vibrations in Zn$\text{}_{3}$P$\text{}_{2}$
Autorzy:
Misiewicz, J.
Wrobel, J. M.
Clayman, B. P.
Powiązania:
https://bibliotekanauki.pl/articles/1887203.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.30.Hv
Opis:
Reflectivity and transmittivity spectra of Zn$\text{}_{3}$P$\text{}_{2}$ in the far infrared region were measured at several temperatures. Raman scattering spectra at 295 K were also measured. Results of these measurements were interpreted in terms of one-phonon and multi-phonon transitions.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 405-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering
Autorzy:
Bała, W.
Drozdowski, M.
Kozielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1891888.pdf
Data publikacji:
1991-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
61.70.Wp
Opis:
Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.
Źródło:
Acta Physica Polonica A; 1991, 80, 5; 723-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Electroluminescence of ZnSe/ZnO Structures under Biaxial Stress
Autorzy:
Bała, W.
Firszt, F.
Łęgowski, S.
Męczyńska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1924234.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
61.70.Wp
Opis:
The strained ZnSe/ZnO structures grown on (111) ZnSe crystals by plasma oxidation was investigated by electro- and photoluminescence methods. The lines of heavy and light hole excitons under biaxial compressive stress are measured as a function of the temperature.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 896-899
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering
Autorzy:
Bała, W.
Drozdowski, M.
Kozielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879935.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
61.70.Wp
Opis:
The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 225-228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Characterization of Mn-Doped $BiFeO_3$ Nanoparticles
Autorzy:
Fukumura, H.
Matsui, S.
Tonari, N.
Nakamura, T.
Hasuike, N.
Nishio, K.
Isshiki, T.
Harima, H.
Kisoda, K
Powiązania:
https://bibliotekanauki.pl/articles/1807808.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
63.20.D-
78.30.-j
Opis:
$BiFeO_3$ is a multiferroic material showing antiferromagnetic ordering and ferroelectric behavior simultaneously. Here, Mn-doped $BiFeO_3$ nanoparticles were synthesized up to 10% of Mn composition by a sol-gel process. The samples showed high crystallinity with no secondary phase up to 2% of Mn doping. A phonon peak at 1250 $cm^{-1}$ in undoped $BiFeO_3$ showed anomalous intensity enhancement in the magnetically ordered phase below $T_N$ = 643 K due to a spin-phonon coupling. This behavior was less pronounced in the Mn-doped samples, suggesting a suppression of magnetic ordering between $Fe^{3+}$ spins by Mn doping.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 47-50
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of the First-Order Raman Phonon Lines in GaS$\text{}_{0.25}$Se$\text{}_{0.75}$ Layered Crystals
Autorzy:
Gasanly, N. M.
Powiązania:
https://bibliotekanauki.pl/articles/2035649.pdf
Data publikacji:
2002-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.30.-j
78.30.Hv
Opis:
Systematic measurements by Raman scattering of the frequency and line width of the zone-center optical modes in GaS$\text{}_{0.25}$Se$\text{}_{0.75}$ layered crystal over the temperature range of 10-300 K are carried out. The analysis of temperature dependence of intralayer modes shows that frequency shift and line broadening are successfully modeled by including the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.
Źródło:
Acta Physica Polonica A; 2002, 102, 6; 801-810
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-Temperature Raman Scattering in TlGa$\text{}_{x}$In$\text{}_{1-x}$S$\text{}_{2}$ Layered Mixed Crystals: Compositional Dependence of the Mode Frequencies and Line Shapes
Autorzy:
Gasanly, N. M.
Yuksek, N. S.
Powiązania:
https://bibliotekanauki.pl/articles/2044573.pdf
Data publikacji:
2005-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.30.Hv
78.30.-j
Opis:
The Raman spectra of TlGa$\text{}_{x}$In$\text{}_{1-x}$S$\text{}_{2}$ layered mixed crystals were studied for a wide range of composition (0≤x≤1) at T=50 K. The effect of crystal disorder on the line width broadening of the Raman-active modes are discussed. The asymmetry in the Raman line shape is analyzed for two interlayer and intralayer modes exhibiting one-mode behavior.
Źródło:
Acta Physica Polonica A; 2005, 108, 6; 997-1003
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Micro-Raman Study of $BiFeO_3$ Thin Films Fabricated by Chemical Solution Deposition Using Different Bi/Fe Ratio Precursors
Autorzy:
Nakamura, T.
Fukumura, H.
Hasuike, N.
Harima, H.
Nakamura, Y.
Kisoda, K.
Nakashima, S.
Okuyama, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807821.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
63.20.D-
78.30.-j
Opis:
$BiFeO_3$ thin films were grown by chemical solution deposition using precursors with different elemental ratios, Bi/Fe = 1.1/1.0, 1.0/1.0 and 1.0/1.1. All the samples consisted of two easily distinguishable components of crystalline and amorphous phases. We have found that the electric properties of $BiFeO_3$ thin films are closely connected to the crystallinity of the films.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 72-74
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Scattering Study of (Sr,Ca)$\text{}_{10}$Cu$\text{}_{17}$O$\text{}_{29}$ Single Crystals
Autorzy:
Strzeszewski, J.
Szymczak, H.
Leonyuk, L.
Szymczak, R.
Powiązania:
https://bibliotekanauki.pl/articles/2014363.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
74.25.Gz
74.25.-q
Opis:
Polarized Raman spectra of high temperature superconducting single crystals of A$\text{}_{10}$Cu$\text{}_{17}$O$\text{}_{29}$ (A$\text{}_{10}$=Ca$\text{}_{4.7}$Sr$\text{}_{4.1}$Bi$\text{}_{0.3}$) were studied in various scattering configurations in the range of 40-700cm$\text{}^{-1}$. In very distinctive spectra there were found over 20 peaks. It was observed that the flat continuum of electronic excitations in the normal state was redistributed below the critical temperature. The frequency dependent redistribution is consistent with the value of energy gap estimated using tunnelling spectroscopy techniques.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 429-439
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Resistivity of CrN Thin Films
Autorzy:
Batko, I.
Batkova, M.
Lofaj, F.
Powiązania:
https://bibliotekanauki.pl/articles/1372678.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ga
72.20.Ee
78.30.Hv
Opis:
The work is focused on the measurements of electrical resistivity of CrN thin films deposited on glass substrates by DC-magnetron sputtering in Ar+$N_{2}$ atmosphere. The studied samples reveal semiconducting behaviour of electrical resistivity in the whole range of tested preparation parameters (such as pressure and composition of Ar-$N_{2}$ mixture), whereas the electrical transport regime is strongly influenced by parameters of preparation. Numerical analysis of the experimental data showed that electrical transport can be adequately described in terms of variable-range hopping conduction in selected temperature intervals. Moreover, S-shaped anomaly in ρ(T) dependence, being expected to be a consequence of phase transition to a low-temperature antiferromagnetic orthorhombic phase, has been observed for sample with the highest concentration of $N_{2}$ in the temperature interval of 220-250 K. The obtained results indicate that technology processes typically used for preparation of CrN coatings represent a promising potential to develop also high sensitivity cryogenic sensors for high magnetic fields applications.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 415-416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Spectroscopy of $LiFePO_4$ and $Li_3V_2(PO_4)_3$ Prepared as Cathode Materials
Autorzy:
Ziółkowska, D.
Korona, K.
Kamińska, M.
Grzanka, E.
Andrzejczuk, M.
Wu, S.
Chen, M.
Powiązania:
https://bibliotekanauki.pl/articles/1493017.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
82.80.Gk
82.47.Aa
Opis:
Structure of samples of lithium iron vanadium phosphates of different compositions were investigated by X-rays, electron microscopy and Raman spectroscopy. The investigated salts were mainly of olivine-like and NASICON-like structures. The X-ray diffraction and the Raman scattering show different crystalline structures, which is probably caused by difference between cores of the crystallites (probed by X-rays) and their shells (probed by the Raman scattering). Most of the Raman spectra were identified with previously published data, however in the samples with high vanadium concentration we have observed new, not reported earlier modes at 835 $cm^{-1}$ and 877 $cm^{-1}$, that we identified as oscillations related to $V_2O_7^{4-}$ or $VO_4^{3-}$ anions.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 973-975
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Some Aspects of Solid State Radioluminescence
Autorzy:
Wojtowicz, A. J.
Powiązania:
https://bibliotekanauki.pl/articles/1994522.pdf
Data publikacji:
1999-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Ya
78.30.Hv
78.60.Kn
29.40.Mc
Opis:
In this paper we review results of radioluminescence studies on two scintillator materials, LuAlO$\text{}_{3}$ and YAlO$\text{}_{3}$, activated with Ce. The experiments include measurements of ther moluminescence, isothermal phosphorescence decays, scintillation light yield as function of temperature, and scintillation time profiles under gamma excitation. Experimental results are interpreted in the frame of a simple kinetic model that includes a number of electron traps. We have identified and characterized a number of deep and shallow traps and demonstrated that traps in LuAlO$\text{}_{3}$:Ce are deeper than corresponding traps in YAlO$\text{}_{3}$:Ce. Unlike deep traps which are responsible for some scintillation light loss but otherwise do not have any impact on generation of scintillation light, shallow traps are shown to actively interfere with the process of radiative recombination via Ce ions. We demonstrate that shallow traps are responsible for some as yet unexplained observations including a higher room temperature light yield of YAlO$\text{}_{3}$:Ce and its longer scintillation decay time, as well as a longer scintillation rise time in LuAlO$\text{}_{3}$:Ce.
Źródło:
Acta Physica Polonica A; 1999, 95, 1; 165-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 18

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