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Wyszukujesz frazę "73.90.+f" wg kryterium: Temat


Wyświetlanie 1-15 z 15
Tytuł:
Dependence of ZnO Nanostructured Thin Films Properties on Growth Temperature by APCVD Method
Autorzy:
Maleki, M.
Rozati, S.
Powiązania:
https://bibliotekanauki.pl/articles/1401893.pdf
Data publikacji:
2015-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.90.+f
Opis:
In this paper, the effect of substrate temperature on the electrical, structural, morphological and optical properties of nanostructured polycrystalline zinc oxide thin films were investigated by the Hall measurement, X-ray diffraction, scanning electron microscopy and UV-visible spectrophotometer, respectively. Then these modified thin films were deposited on two kinds of single crystal and polycrystalline of n- and p-type Si in three different substrate temperatures of 300, 400 and 500°C by low cost atmospheric pressure chemical vapor deposition method. Like the samples grown on the glass substrate, with increase of the temperature in samples grown on single crystal Si, preferred orientation changes from (100) to (002), while in samples deposited on poly crystalline Si, preferred orientation remains (100).
Źródło:
Acta Physica Polonica A; 2015, 128, 3; 367-372
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Friedel Oscillations in Carbon Nanotube Quantum Dots and Superlattices
Autorzy:
Chico, L.
Santos, H.
Ayuela, A.
Pelc, M.
Jaskólski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1811922.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
73.90.+f
Opis:
Interface states of all-metallic carbon nanotube quantum dots and superlattices are studied within a tight-binding model. We focus on achiral systems made by connecting armchair (n,n) and zigzag (2n,0) tubes with a full ring of n pentagon-heptagon topological defects. We show that the coupling between interface states, which arise from the topological defects, reflects the existence of the Friedel oscillations in the (n,n) tube, with an unusually large decay exponent. We expect this interaction to be important for the understanding of other physical properties, such as selective dot growth, magnetic interaction through carbon tubes or optical spectroscopy of interface states.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1085-1091
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Solid-State Solutions of TiO$\text{}_{2}$-SnO$\text{}_{2}$ and SrTiO$\text{}_{3}$-BaTiO$\text{}_{3}$
Autorzy:
Zakrzewska, K.
Radecka, M.
Pasierb, P.
Bućko, M.
Urbaniec, E.
Janas, J.
Powiązania:
https://bibliotekanauki.pl/articles/1964070.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.30.Hd
73.90.+f
Opis:
Thin films of TiO$\text{}_{2}$-SnO$\text{}_{2}$ and SrTiO$\text{}_{3}$-BaTiO$\text{}_{3}$ are deposited by rf sputtering. The crystallographic and optical properties near the band gap absorption are investigated as a function of film composition. Systematic displacement of the fundamental absorption edge shows different behaviour for amorphous and polycrystalline samples. Results are discussed in terms of the influence of the substitution on the local environment of Ti ion and Me-O distances. Application of XANES and EXAFS is proposed for the studies of solid-state solutions.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 899-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide
Autorzy:
Jasiński, J.
Kurpiewski, A.
Korοna, K.
Kamińska, M.
Ρalczewska, M.
Krotkus, A.
Marcinkievicius, S.
Liliental-Weber, Z.
Tan, H. H.
Jagadish, C.
Powiązania:
https://bibliotekanauki.pl/articles/1933772.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Er
73.90.+f
Opis:
Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As$\text{}_{Ga}$) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 747-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction
Autorzy:
Ahmad, Z.
Sayyad, M.
Karimov, Kh.
Saleem, M.
Shah, M.
Powiązania:
https://bibliotekanauki.pl/articles/1538707.pdf
Data publikacji:
2010-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Jv
73.90.+f
Opis:
Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance $(R_{s})$ interface states $(D_{it})$ of the junction. Measured capacitance and conductance were corrected for $R_{s}$. The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of $10^{12} cm^{-2} eV^{-1}$.
Źródło:
Acta Physica Polonica A; 2010, 117, 3; 493-496
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Properties of Highly Non-stoichiometric GaAs
Autorzy:
Kurpiewski, A.
Korona, K.
Kamińska, M.
Palczewska, M.
Jagadish, C.
Williams, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876991.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.90.+f
78.30.Er
Opis:
The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorption coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 518-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Field Control of Magnetic Coupling in a Double Quantum Dot System and Related Parasitic Electric Dipole Effect
Autorzy:
Bak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1534865.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.90.+f
75.75.Lf
Opis:
We prove that tunable magnetic interaction in a two-qubit spintronic device can arise due to the mutual competition of the Ruderman-Kittel-Kasuya-Yosida and double-exchange interactions. The values of induced electric dipoles (which arise when magnetic coupling is manipulated by the electric field) are calculated. We show that the dissipation of the energy during logic operations due to these parasitic dipoles can destroy quantum coherence in any quantum dot system.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 957-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photocatalytical Decomposition of Contaminants οn Thin Film Gas Sensors
Autorzy:
Radecka, M.
Łysoń, B.
Lubecka, M.
Czapla, A.
Zakrzewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1539145.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
73.90.+f
82.50.Hp
Opis:
Gas sensing materials have been prepared in a form of $TiO_{2}-SnO_{2}$ thin films by rf reactive sputtering from $Ti:SnO_{2}$ and $Sn:TiO_{2}$ targets. Material studies have been performed by scanning electron microscopy, atomic force microscopy, X-ray diffraction at grazing incidence, Mössbauer spectroscopy, X-ray photoelectron spectroscopy and optical spectrophotometry. Dynamic gas sensing responses have been recorded as reproducible changes in the electrical resistance upon introduction of hydrogen at a partial pressure of 100-6000 ppm over a wide temperature range 473-873 K. Contamination experiments have been carried out with the motor oil (40 vol.% solution in $CCl_{4}$) in order to study the effect of UV light illumination on the gas sensor response. Optical spectroscopy has been applied to monitor the photodecomposition of the test compound, bromothymol blue. The Electronic Nose, ALPHA MOS FOX 4000 has been used in order to differentiate between different groups of motor oil vapors.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 415-419
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices
Autorzy:
Subačius, L.
Venckevičius, R.
Kašalynas, I.
Seliuta, D.
Valušis, G.
Schmidt, J.
Lisauskas, A.
Roskos, H.
Alekseev, K.
Köhler, K.
Powiązania:
https://bibliotekanauki.pl/articles/1505524.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Cd
06.60.Jn
73.90.+f
Opis:
Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/$Al_{0.3}Ga_{0.7}As$ superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 167-169
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thin Films Investigations by Means of Spin-Wave Resonance
Autorzy:
Maksymowicz, A. Z.
Maksymowicz, L. J.
Whiting, J. S. S.
Powiązania:
https://bibliotekanauki.pl/articles/1891792.pdf
Data publikacji:
1991-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.50.+g
76.30.-v
73.90.+f
Opis:
Magnetic resonance technique may successfully be applied to determine some basic parameters such as g-factor, magnetization M$\text{}_{s}$ or anisotropy energy constant K$\text{}_{u}$ in thin magnetic films. These parameters are obtained from a ferromagnetic resonance experiment when uniform precession of M$\text{}_{s}$ takes place. From spin-wave resonance one may extract very valuable information on the exchange constant A or the surface conditions characterized by the surface anisotropy energy (or pinning parameters ρ). In fact, it is only spin-wave resonance or similar techniques which allow for measurements of A, ρ or the coupling constant K$\text{}_{c}$ between ferromagnetic sublayers in multi-layered structure. The magnetic phase diagram, temperature dependence of the spin-waves stiffness constant, and the anisotropy energy constant may also be listed as less common examples of spin-wave resonance technique application for the investigation of thin films. This paper presents a theoretical approach to typical examples of experimental results and their interpretation from spin-wave resonance measurements.
Źródło:
Acta Physica Polonica A; 1991, 80, 5; 665-673
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron and Exciton Quasi-Stationary s-States in Open Spherical Quantum Dots
Autorzy:
Tkach, M.
Seti, Ju.
Voitsekhivska, O.
Powiązania:
https://bibliotekanauki.pl/articles/1419890.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.Dx
73.21.La
73.22.Dj
73.90.+f
Opis:
The theoretical calculation of spectral parameters of electron and exciton quasi-stationary s-states in open spherical quantum dot is performed within the effective mass approximation and rectangular potentials model. The conceptions of probability distribution functions (over quasi-momentum or energy) of electron location inside of quantum dot and their spectral characteristics: generalized resonance energies and widths are introduced. It is shown that the generalized resonance energies and widths, obtained within the distribution functions, satisfy the Heisenberg uncertainty principle for the barrier widths varying from zero to infinity. At the same time, the ordinary resonance energies and widths defined as complex poles of scattering S-matrix, do not satisfy it for the small barrier widths and, therefore, are correct only for the open quantum dots with rather wide potential barriers.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 207-211
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology, Optical and AC Electrical Properties of Copper Phthalocyanine Thin Films
Autorzy:
Azim-Araghi, M.
Haji Mirza Mohamadi, S.
Bisadi, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1207291.pdf
Data publikacji:
2014-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Sx
73.90.+f
72.20.Ee
72.80.Le
Opis:
AC electrical properties of sandwich devices composed of thermally evaporated thin films of copper phthalocyanine (CuPc) with aluminum and gold electrodes (Al/CuPc/Au) are investigated over frequency (f) range of $10^2 - 10^5$ Hz and temperature range of 293-453 K. Morphology of the samples was studied via field emission scanning electron microscope images and X-ray diffraction micrographs. The X-ray diffraction micrograph indicates the configuration of α-CuPc with the (510) plane as the preferred orientation. UV-Vis absorption spectrum was analyzed and the optical band-gap energy of CuPc thin film was determined to be 2.81 ± 0.01 eV. Capacitance increased with increasing temperature especially for $f = 10^2$ Hz. Loss factor decreased considerably with increasing frequency to a minimum value at about $f = 10^4$ Hz and increased afterwards. Capacitance is generally independent of frequency for T ≤ 413 K; however it decreases remarkably with increasing frequency for T > 413 K. The conductivity increases quite noticeably with increasing frequency particularly for T ≤ 413 K. The AC electrical characteristics are in good agreement with Goswami and Goswami model. According to our data, at high temperatures, the band theory is applicable in describing the conduction process, whereas hopping mechanism is dominant at low temperatures.
Źródło:
Acta Physica Polonica A; 2014, 125, 1; 87-92
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Behaviour of Nanostructured Porous Silicon
Autorzy:
Azim-Araghi, M.
Ashrafabadi, S.
Kanjuri, F.
Powiązania:
https://bibliotekanauki.pl/articles/1419847.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.30.+y
73.40.Sx
73.50.-h
73.90.+f
73.63.Rt
68.37.Hk
Opis:
The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at $10^2 - 10^5$ Hz frequency range.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 170-173
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications
Autorzy:
Baeumler, M.
Polyakov, V.
Gütle, F.
Dammann, M.
Benkhelifa, F.
Waltereit, P.
Reiner, R.
Müller, S.
Wespel, M.
Quay, R.
Mikulla, M.
Wagner, J.
Ambacher, O.
Powiązania:
https://bibliotekanauki.pl/articles/1197910.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Fi
85.30.De
85.30.Tv
85.40.Bh
85.40.Qx
73.40.-c
73.90.+f
73.61.Ey
73.50.Mx
Opis:
The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric field peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate field plate, and one at the end of the source shield field plate. The close correlation between lateral electric field and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric field distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield field plate reveal the peaks located at the locations of enhanced electric field. By studying the voltage dependence of the electroluminescence peaks the influence of the field plates on the electric field distribution in source drain direction can be visualized.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 982-985
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Some Physical Properties of Chemically Deposited Nickel Sulfide Thin Films
Autorzy:
Hammad, A.
ElMandouh, Z.
Elmeleegi, H.
Powiązania:
https://bibliotekanauki.pl/articles/1400567.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.37.Hk
68.55.jd
68.55.J-
78.20.Ci
78.68.+m
73.50.Lw
73.90.+f
Opis:
$Ni_2S_{2-x}$ thin films with x=0, 0.5, and 1 were prepared by chemical bath deposition technique. Amorphous structure was discovered by XRD for x=1, while α-Ni₇S₆ and NiS phases were discovered for x=0, and x=0.5 respectively. SEM graphs of the studied films have confirmed the XRD results. Optical band gap values increase from 0.845 to 0.912 eV, with increase of the composition x from 0 to 1. Activation energy values increase in the range from x=0 to x=0.5 and does not change for x=1.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 901-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-15 z 15

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