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Wyszukujesz frazę "73.90.+f" wg kryterium: Temat


Tytuł:
Dependence of ZnO Nanostructured Thin Films Properties on Growth Temperature by APCVD Method
Autorzy:
Maleki, M.
Rozati, S.
Powiązania:
https://bibliotekanauki.pl/articles/1401893.pdf
Data publikacji:
2015-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.90.+f
Opis:
In this paper, the effect of substrate temperature on the electrical, structural, morphological and optical properties of nanostructured polycrystalline zinc oxide thin films were investigated by the Hall measurement, X-ray diffraction, scanning electron microscopy and UV-visible spectrophotometer, respectively. Then these modified thin films were deposited on two kinds of single crystal and polycrystalline of n- and p-type Si in three different substrate temperatures of 300, 400 and 500°C by low cost atmospheric pressure chemical vapor deposition method. Like the samples grown on the glass substrate, with increase of the temperature in samples grown on single crystal Si, preferred orientation changes from (100) to (002), while in samples deposited on poly crystalline Si, preferred orientation remains (100).
Źródło:
Acta Physica Polonica A; 2015, 128, 3; 367-372
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Friedel Oscillations in Carbon Nanotube Quantum Dots and Superlattices
Autorzy:
Chico, L.
Santos, H.
Ayuela, A.
Pelc, M.
Jaskólski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1811922.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
73.90.+f
Opis:
Interface states of all-metallic carbon nanotube quantum dots and superlattices are studied within a tight-binding model. We focus on achiral systems made by connecting armchair (n,n) and zigzag (2n,0) tubes with a full ring of n pentagon-heptagon topological defects. We show that the coupling between interface states, which arise from the topological defects, reflects the existence of the Friedel oscillations in the (n,n) tube, with an unusually large decay exponent. We expect this interaction to be important for the understanding of other physical properties, such as selective dot growth, magnetic interaction through carbon tubes or optical spectroscopy of interface states.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1085-1091
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Solid-State Solutions of TiO$\text{}_{2}$-SnO$\text{}_{2}$ and SrTiO$\text{}_{3}$-BaTiO$\text{}_{3}$
Autorzy:
Zakrzewska, K.
Radecka, M.
Pasierb, P.
Bućko, M.
Urbaniec, E.
Janas, J.
Powiązania:
https://bibliotekanauki.pl/articles/1964070.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.30.Hd
73.90.+f
Opis:
Thin films of TiO$\text{}_{2}$-SnO$\text{}_{2}$ and SrTiO$\text{}_{3}$-BaTiO$\text{}_{3}$ are deposited by rf sputtering. The crystallographic and optical properties near the band gap absorption are investigated as a function of film composition. Systematic displacement of the fundamental absorption edge shows different behaviour for amorphous and polycrystalline samples. Results are discussed in terms of the influence of the substitution on the local environment of Ti ion and Me-O distances. Application of XANES and EXAFS is proposed for the studies of solid-state solutions.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 899-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide
Autorzy:
Jasiński, J.
Kurpiewski, A.
Korοna, K.
Kamińska, M.
Ρalczewska, M.
Krotkus, A.
Marcinkievicius, S.
Liliental-Weber, Z.
Tan, H. H.
Jagadish, C.
Powiązania:
https://bibliotekanauki.pl/articles/1933772.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Er
73.90.+f
Opis:
Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As$\text{}_{Ga}$) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 747-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction
Autorzy:
Ahmad, Z.
Sayyad, M.
Karimov, Kh.
Saleem, M.
Shah, M.
Powiązania:
https://bibliotekanauki.pl/articles/1538707.pdf
Data publikacji:
2010-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Jv
73.90.+f
Opis:
Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance $(R_{s})$ interface states $(D_{it})$ of the junction. Measured capacitance and conductance were corrected for $R_{s}$. The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of $10^{12} cm^{-2} eV^{-1}$.
Źródło:
Acta Physica Polonica A; 2010, 117, 3; 493-496
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Properties of Highly Non-stoichiometric GaAs
Autorzy:
Kurpiewski, A.
Korona, K.
Kamińska, M.
Palczewska, M.
Jagadish, C.
Williams, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876991.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.90.+f
78.30.Er
Opis:
The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorption coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 518-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Field Control of Magnetic Coupling in a Double Quantum Dot System and Related Parasitic Electric Dipole Effect
Autorzy:
Bak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1534865.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.90.+f
75.75.Lf
Opis:
We prove that tunable magnetic interaction in a two-qubit spintronic device can arise due to the mutual competition of the Ruderman-Kittel-Kasuya-Yosida and double-exchange interactions. The values of induced electric dipoles (which arise when magnetic coupling is manipulated by the electric field) are calculated. We show that the dissipation of the energy during logic operations due to these parasitic dipoles can destroy quantum coherence in any quantum dot system.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 957-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photocatalytical Decomposition of Contaminants οn Thin Film Gas Sensors
Autorzy:
Radecka, M.
Łysoń, B.
Lubecka, M.
Czapla, A.
Zakrzewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1539145.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
73.90.+f
82.50.Hp
Opis:
Gas sensing materials have been prepared in a form of $TiO_{2}-SnO_{2}$ thin films by rf reactive sputtering from $Ti:SnO_{2}$ and $Sn:TiO_{2}$ targets. Material studies have been performed by scanning electron microscopy, atomic force microscopy, X-ray diffraction at grazing incidence, Mössbauer spectroscopy, X-ray photoelectron spectroscopy and optical spectrophotometry. Dynamic gas sensing responses have been recorded as reproducible changes in the electrical resistance upon introduction of hydrogen at a partial pressure of 100-6000 ppm over a wide temperature range 473-873 K. Contamination experiments have been carried out with the motor oil (40 vol.% solution in $CCl_{4}$) in order to study the effect of UV light illumination on the gas sensor response. Optical spectroscopy has been applied to monitor the photodecomposition of the test compound, bromothymol blue. The Electronic Nose, ALPHA MOS FOX 4000 has been used in order to differentiate between different groups of motor oil vapors.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 415-419
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices
Autorzy:
Subačius, L.
Venckevičius, R.
Kašalynas, I.
Seliuta, D.
Valušis, G.
Schmidt, J.
Lisauskas, A.
Roskos, H.
Alekseev, K.
Köhler, K.
Powiązania:
https://bibliotekanauki.pl/articles/1505524.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Cd
06.60.Jn
73.90.+f
Opis:
Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/$Al_{0.3}Ga_{0.7}As$ superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 167-169
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thin Films Investigations by Means of Spin-Wave Resonance
Autorzy:
Maksymowicz, A. Z.
Maksymowicz, L. J.
Whiting, J. S. S.
Powiązania:
https://bibliotekanauki.pl/articles/1891792.pdf
Data publikacji:
1991-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.50.+g
76.30.-v
73.90.+f
Opis:
Magnetic resonance technique may successfully be applied to determine some basic parameters such as g-factor, magnetization M$\text{}_{s}$ or anisotropy energy constant K$\text{}_{u}$ in thin magnetic films. These parameters are obtained from a ferromagnetic resonance experiment when uniform precession of M$\text{}_{s}$ takes place. From spin-wave resonance one may extract very valuable information on the exchange constant A or the surface conditions characterized by the surface anisotropy energy (or pinning parameters ρ). In fact, it is only spin-wave resonance or similar techniques which allow for measurements of A, ρ or the coupling constant K$\text{}_{c}$ between ferromagnetic sublayers in multi-layered structure. The magnetic phase diagram, temperature dependence of the spin-waves stiffness constant, and the anisotropy energy constant may also be listed as less common examples of spin-wave resonance technique application for the investigation of thin films. This paper presents a theoretical approach to typical examples of experimental results and their interpretation from spin-wave resonance measurements.
Źródło:
Acta Physica Polonica A; 1991, 80, 5; 665-673
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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