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Wyświetlanie 1-48 z 48
Tytuł:
Quasi-Particle Localization by Disorder in ν = 5/2 Fractional Quantum Hall State and Its Potential Application
Autorzy:
Goswami, P.
Powiązania:
https://bibliotekanauki.pl/articles/1418290.pdf
Data publikacji:
2012-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
Opis:
We consider the filling factor 5/2 fractional quantum Hall state of spin-polarized fermions in a dirty (mobility $μ_b \lt 10 m^2 V^{-1} s^{-1}$) bi-layer quantum well system.We show that the system undergoes a quantum phase transition from the effective two-component state to an effective single-component state, at fixed charge imbalance regulatory parameter $\Delta_{c}$ and constant layer separation, as the inter-layer tunneling strength $\Desta_\text{SAS}$ is increased. At finite and constant $\Delta_\text{SAS}$, a transition from the latter state to the former state is also possible upon increasing the parameter $\Delta_{c}$. We identify the order parameter to describe quantum phase transition as a pseudo-spin component and calculate this with the aid of the Matsubara propagators in the finite-temperature formalism. Our treatment is able to show that, at low temperature(< 0.1 K) and low value of charge imbalance regulatory parameter, there is a competition between the disorder and the inter-layer tunneling strength in the sample. The competition leads to the quasi-particle localization at low tunneling strength.
Źródło:
Acta Physica Polonica A; 2012, 122, 4; 741-747
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells
Autorzy:
Łepkowski, S.
Bardyszewski, W.
Rodak, D.
Powiązania:
https://bibliotekanauki.pl/articles/1195356.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
73.22.Dj
Opis:
We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1154-1155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Landau Level Scattering Processes in Magnetic Field Assisted THz Quantum Cascade Laser
Autorzy:
Radovanović, J.
Daničić, A.
Milanović, V.
Indjin, D.
Ikonic, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1503186.pdf
Data publikacji:
2011-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We present a detailed analysis of GaAs/AlGaAs terahertz quantum cascade laser in the presence of an intense external magnetic field. One of the objectives in further development of THz quantum cascade laser is the realization of structures operating at higher temperatures. This is difficult to obtain as the operating photon emission energy is smaller than the longitudinal-optical phonon energy in the semiconductor material. With increased temperature, electrons in the upper radiative state gain sufficient in-plane energy to emit an longitudinal-optical phonon, which represents a non-radiative scattering and reduces the optical gain. By applying strong magnetic field, two-dimensional continuous energy subbands become split into series of discrete Landau levels, and at particular values of B it is possible to quench these non-radiative channels. Numerical simulations are performed on two-well design quantum cascade laser operating at 4.6 THz, implemented in GaAs/$Al_{0.15}Ga_{0.85}As$, and the magnetic field is perpendicular to the epitaxial layers. Strong oscillations of carrier lifetimes for the upper state of the laser transition, as a function of magnetic field are observed, which can be attributed to interface roughness scattering and longitudinal-optical phonon scattering between Landau levels.
Źródło:
Acta Physica Polonica A; 2011, 120, 2; 227-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron-Hole Distribution and Exciton Condensed Phase Formation in Semiconductor Quantum Wells
Autorzy:
Chernyuk, A. A.
Sugakov, V. I.
Powiązania:
https://bibliotekanauki.pl/articles/2046909.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Lk
73.21.Fg
Opis:
We study the development of ring luminescence of indirect excitons at macroscopical distances from the central excitation spot in quantum well structures. The Landau model for exciton condensation generalized for particles with finite lifetimes in conditions of inhomogeneous excitation is proposed. The transition between the fragmented and continuous rings and the temperature dependence of the effects are considered. The irradiation of the system by two spatially separated laser spots is simulated as well.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 169-174
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Orientation Dependence of the Fundamental Optical Transition in type-II W-Design Quantum Well Structures
Autorzy:
Ryczko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1376073.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
71.55.Eq
Opis:
Using a multiband k·p theory the band structure properties of type-II W-design AlSb/InAs/GaInSb/InAs/AlSb quantum wells on GaSb substrates of various crystallographic orientations have been investigated. Such structures are predicted for the emission in a broad range of mid infrared from below 3 μm to beyond 10 μm. The energy of the fundamental optical transition and the corresponding oscillator strength have been determined in function of the layer structure details and versus the substrate orientation. In addition, the resulting optical anisotropy in such type-II quantum wells has been derived.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1149-1153
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anisotropy of the Conductivity in the Asymmetric Quantum Wells
Autorzy:
Majchrowski, K.
Paśko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1811959.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.21.Fg
Opis:
Gorbatsevich et al. and Kibis suggested that a number of interesting galvano-magnetic effects could be observed in quantum structures where the symmetry with respect to the space coordinates inversion and time-reversal are broken simultaneously. In the paper of Kibis for example, the infinite triangular quantum well in an external magnetic field was considered and the anisotropy of electron momentum transfer due to interaction with phonons was predicted. The role of magnetic field was to provide the time-invariance breaking. In this work we considered the effect of anisotropy of electron momentum transfer due to interaction with polarized light using more realistic model of finite triangular quantum well. This anisotropy leads to the anisotropy of the real part of photoconductivity and as it follows from our calculations, the effect though not very great, could be measurable for the attainable values of magnetic field B≈5 T and the widths of quantum well.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1241-1246
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Cascade Laser Design for Tunable Output at Characteristic Wavelengths in the Mid-Infrared Spectral Range
Autorzy:
Daničić, A.
Radovanović, J.
Milanović, V.
Indjin, D.
Ikonić, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1537879.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We present a method for systematic optimization of quantum cascade laser active region, based on the use of the genetic algorithm. The method aims at obtaining a gain-maximized structure, designed to emit radiation at specified wavelengths suitable for direct absorption by pollutant gasses present in the ambient air. After the initial optimization stage, we introduce a strong external magnetic field to tune the laser output properties and to slightly modify the emission wavelength to match the absorption lines of additional compounds. The magnetic field is applied perpendicularly to the epitaxial layers, thus causing two-dimensional continuous energy subbands to split into series of discrete Landau levels. This affects all the relevant relaxation processes in the structure and consequently the lifetime of carriers in the upper laser level. Furthermore, strong effects of band nonparabolicity result in subtle changes of the lasing wavelength at magnetic fields which maximize the gain, thus providing a path for fine-tuning of the output radiation properties. Numerical results are presented for GaAs/$Al_{x}Ga_{1-x}As$ based quantum cascade laser structures designed to emit at particular wavelengths in the mid-infrared part of the spectrum.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 772-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Transport in Quantum Cascade Lasers in Strong Magnetic Field
Autorzy:
Radovanović, J.
Milanović, V.
Indjin, D.
Ikonić, Z.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505456.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We have developed a comprehensive rate equations based model for calculating the optical gain in the active region of a quantum cascade laser in magnetic field perpendicular to the structure layers, which takes into account all the relevant scattering channels. The model is applied to gain-optimized quantum cascade laser active region, obtained by a systematic optimization procedure based on the use of genetic algorithm, which we have previously set up for designing novel structures and improving performance of existing ones. It has proven to be very efficient in generating optimal structures which emit radiation at specified wavelengths corresponding to absorption fingerprints of particular harmful pollutants found in the atmosphere. We also illustrate another interesting prospective application of quantum cascade laser-type structures: the design of metamaterials with tunable complex permittivity, based on amplification via intersubband transitions. In this case, the role of the magnetic field is to assist the attainment of sufficient optical gain (population inversion), necessary to effectively manipulate the permittivity and fulfill the conditions for negative refraction (left-handedness).
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 99-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photogalvanic Effect in Semiparabolic Quantum Well
Autorzy:
Majchrowski, K.
Paśko, W.
Tralle, I.
Powiązania:
https://bibliotekanauki.pl/articles/1791300.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.21.Fg
Opis:
In this work we studied the charge carriers behaviour in quantum structures where the symmetry with respect to space coordinates and time-reversal symmetry are broken simultaneously. As the model of such structures we considered finite semiparabolic quantum well (we considered earlier the case of triangular QW) placed in external magnetic field. We have shown by numerical analysis that the energy spectra of charge carriers in such structures are anisotropic with respect to in-plane (transverse) motion $ϵ_{n}( + k_{x})$ ≠ $ϵ_{n}(-k_{x})$. This leads to the anisotropy of charge carriers in-plane momentum transfer which, in its turn leads to the anisotropy of photoconductivity $σ( + k_{x})$ ≠ $σ(-k_{x})$ and as it follows from our calculations, the effect though not very great, could be measurable for the magnetic field of about few T.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 854-856
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells
Autorzy:
Malissa, H.
Jantsch, W.
Mühlberger, M.
Schäffler, F.
Wilamowski, Z.
Draxler, M.
Bauer, P.
Powiązania:
https://bibliotekanauki.pl/articles/2038126.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
85.75.-d
Opis:
We investigate the spin resonance of electrons in one-sided modulation doped Si$\text{}_{1-x}$Ge$\text{}_{x}$ (x=0-10%)) quantum wells defined by Si$\text{}_{0.75}$Ge$\text{}_{0.25}$ barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 585-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Electron Mobility and Photoconductivity in Quantum Well $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ οn InP Substrate
Autorzy:
Kulbachinskii, V.
Lunin, R.
Yuzeeva, N.
Galiev, G.
Vasilievskii, I.
Klimov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1399881.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
73.63.Hs
Opis:
Isomorphic $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well $In_{0.53}Ga_{0.47}As$ or by illumination using light with λ = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers
Autorzy:
Mc Tavish, J.
Ikonić, Z.
Indjin, D.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1813212.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
73.63.Hs
Opis:
We report on the results of our simulations of Γ-X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ-X scattering), a double quantum well (to compare the Γ-X-G and Γ-Γ scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 891-902
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Precession of Quasi-Bound States in Heterostructures with Spin-Orbit Interaction
Autorzy:
Isić, G.
Indjin, D.
Ikonić, Z.
Milanović, V.
Radovanović, J.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791209.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Ej
73.20.At
73.21.Fg
Opis:
We use a finite-difference model that is capable of describing the single state spin dynamics in a double-barrier AlGaAs heterostructure. The use of Green's functions enables a description of the double-barrier structure by a finite matrix while the interaction with contacts is described by appropriate self-energies. To account for interface roughness scattering, a self-energy $Σp_{IR}$(E, k) is derived within the random phase approximation. The dominant part is due to in-plane momentum relaxation while a smaller part describing spin-flip scattering is neglected. The former only decreases the state lifetime while the latter can also affect the spin precession frequency.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 513-515
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K
Autorzy:
Laurent, T.
Sharma, R.
Torres, J.
Nouvel, P.
Blin, S.
Palermo, C.
Varani, L.
Cordier, Y.
Chmielowska, M.
Faurie,, J.
Beaumont, B.
Powiązania:
https://bibliotekanauki.pl/articles/1505650.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.21.Fg
73.40.-c
Opis:
We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 196-198
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Autorzy:
Požela, J.
Požela, K.
Sužiedėlis, A.
Jucienė, V.
Petkun, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813388.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Di
73.21.Fg
73.40.Kp
Opis:
A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the $Al_{0.2}Ga_{0.8}As$/GaAs/$Al_{0.2}Ga_{0.8}As$ high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs $(v_\text{max}=10^7 cm/s)$ and achieved the value of $4×10^7$ cm/s.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 989-992
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic structure calculations of InP-based coupled quantum dot-quantum well structures
Autorzy:
Andrzejewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1160527.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.21.Fg
73.22.Dj
74.50.+r
Opis:
In this work we investigate the electronic structure of coupled 0D-2D nanostructures. The respective confined state energy levels in a quantum dot-quantum well system are calculated for various conduction band offsets - between the quantum dot and surrounding material. The calculated electron and hole energy levels with their wave functions allow determining if the wave functions are within the injector quantum well or within the quantum dot and if the carrier positions on the energy scale are appropriate from the point of view of a possible laser structure utilizing the so-called tunnel injection scheme. It is shown that for an adequate width of an injector quantum well and the conduction band offsets designing an optimal tunnel injection structure is possible.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-97-A-99
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dyakonov--Perel Spin Relaxation Suppressed by an Applied Magnetic Field
Autorzy:
Wilamowski, Z.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036865.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Rb
73.21.Fg
85.75.-d
Opis:
We observe a strong anisotropy of spin relaxation and a decrease in the spin relaxation rate with increasing electron mobility in contrast to predictions of the classical D'yakonov-Perel spin relaxation model. We show that for high electron mobility the cyclotron motion causes an additional modulation of spin-orbit coupling, leading to an effective suppression of the spin relaxation rate.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 671-674
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Exciton-Longitudinal Optical Phonon Interaction οn Exciton Binding Energies in ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ Quantum Wells
Autorzy:
Onodera, C.
Yoshida, M.
Powiązania:
https://bibliotekanauki.pl/articles/1535752.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.20.Bh
81.05.Dz
Opis:
We study the effects of exciton-longitudinal optical phonon interaction on the exciton binding energies in ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ single quantum wells. The heavy- and light-hole exciton binding energies increase to the exciton-logitudinal optical phonon interaction. The increase in the maximum heavy-hole (light-hole) exciton binding energy for x=0.74 is 68.3 meV (55.0 meV). In narrow ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ single quantum wells SQWs, the heavy- and light-hole exciton binding energies exceed the longitudinal optical phonon energy of ZnS when x ≥ 0.1.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 643-647
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polaron Effects on Nonlinear Optical Properties of a Hydrogenic Impurity in a CdTe/ZnTe Quantum Dot
Autorzy:
Azhagu Parvathi, A.
John Peter, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399298.pdf
Data publikacji:
2013-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
42.65.An
71.38.-k
Opis:
Hydrogenic donor impurity binding energy is obtained in a $Zn_{x}Cd_{1-x}Te//ZnTe$ strained quantum dot taking into account the phonon confinement effect. The interaction of the electron and the phonon modes are expressed in terms of the Fröhlich interaction Hamiltonian. The binding energy is obtained for various Zn composition using the Aldrich-Bajaj effective potential. Calculations have been obtained using the Bessel function as an orthonormal basis for different confinement potentials of barrier height considering the internal electric field induced by the spontaneous and piezoelectric polarizations. Polaron induced linear and third-order nonlinear optical absorption coefficients and the changes of refractive index as a function of incident photon energy are observed. Our results coincide with the recent observations of a hydrogenic impurity binding energy in a CdTe/ZnTe quantum dot solved analytically. It is observed that the potential taking into account the effects of phonon makes the hydrogenic binding energies larger than the obtained results using a Coulomb potential screened by a static dielectric constant and the optical properties of hydrogenic impurity in a quantum dot are strongly affected by the confining potential and the quantum size. It is found that the geometry of the quantum dot, zinc concentration and the effect of phonon have a great influence on the absorption coefficient and refractive index changes of the dot. It is also observed that the magnitude of the absorption coefficients enhances with the inclusion of phonon effect.
Źródło:
Acta Physica Polonica A; 2013, 124, 4; 706-712
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
Autorzy:
Laurent, T.
Sharma, R.
Torres, J.
Nouvel, P.
Blin, S.
Chusseau, L.
Palermo, C.
Varani, L.
Cordier, Y.
Chmielowska, M.
Faurie, J.
Beaumont, B.
Shiktorov, P.
Starikov, E.
Gruzinskis, V.
Powiązania:
https://bibliotekanauki.pl/articles/1505459.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.67.De
73.21.Fg
Opis:
We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 107-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Shake-Up Processes in Photoluminescence of Two-Dimensional Holes in a High Magnetic Field
Autorzy:
Wójs, A.
Bryja, L.
Misiewicz, J.
Potemski, M.
Reuter, D.
Wieck, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047047.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Cc
71.35.Ji
73.21.Fg
Opis:
Recombination of excitons and positive trions is studied by two-beam photoluminescence of a two-dimensional hole gas in a high magnetic field. The singlet, dark-triplet and bright-triplet states of a free trion are resolved, and their binding energies are determined. Recombination of acceptor-bound trions is also detected, including a low-energy cyclotron replica, corresponding to a hole shake-up process. Identification of all these different transitions was possible by analysis of optical selection rules and the comparison of experimental spectra with realistic numerical calculations.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 429-435
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrons in a Semiconductor Quantum Well of the Magnetic Tunneling Structure
Autorzy:
Szczepański, T.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402583.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Dc
73.21.Fg
85.75.Mm
Opis:
We discuss the properties of resonant tunneling diode with resonant levels in the quantum well. The energy levels are formed inside the well as a consequence of quantization of the states between two potential barriers. We solved the Schrödinger equation for the multilayer structure and found the energy of resonant level as a function of the width of quantum well for different parameters of energy profile in the equilibrium. The results present the dependence of spin splitting in the quantum well of nonmagnetic semiconductor on the spin polarization of electrodes.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 222-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrically Detected Magnetic Resonance
Autorzy:
Fedorych, O. M.
Wilamowski, Z.
Jantsch, W.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038127.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Pk
72.25.Rb
73.21.Fg
Opis:
We compare the results of electrically detected magnetic resonance in a 2D electron gas in Si/SiGe quantum wells with transport and magnetic resonance measurements on ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As. The results lead us to the conclusion that observation of electrically detected magnetic resonance is possible only in the case of a slow spin relaxation, where the microwave resonant absorption leads to a noticeable change of spin magnetization.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 591-598
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental and Theoretical Studies of Free and Acceptor-Bound Positive Magneto-Trions
Autorzy:
Bryja, L.
Wójs, A.
Płochocka-Polack, P.
Gładysiewicz, A.
Misiewicz, J.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047714.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Cn
71.35.Ji
73.21.Fg
Opis:
By combination of polarization-resolved photoluminescence, transport, and realistic numerics we study energy and recombination spectra of free and acceptor-bound positive trions in a quasi-two-dimensional hole gas. The singlet-triplet crossing in the trion ground state is found at B≈12 T, and a slight reduction of all trion binding energies coincident with the formation of a Laughlin hole fluid is observed at B≈14.2 T.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 415-418
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mesoscopic Structures for Microwave-THz Detection
Autorzy:
Sužied.elis, A.
Ašmontas, S.
Požela, J.
Kundrotas, J.
Širmulis, E.
Gradauskas, J.
Kozič, A.
Kazlauskaité, V.
Anbinderis, T.
Powiązania:
https://bibliotekanauki.pl/articles/1813189.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
73.40.Kp
73.50.Lw
73.63.Kv
Opis:
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 803-809
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Group Delay in Semiconductor Structures with Energy Dependent Effective Mass
Autorzy:
Kočinac, S.
Milanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/2047876.pdf
Data publikacji:
2007-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Xp
73.21.Fg
73.40.Gk
73.43.Jn
Opis:
We investigate tunneling times of a particle with energy dependent effective mass for a one-dimensional real potential. General relations between phase, group and dwell times are obtained for a desired potential shape. For the textbook case of a real rectangular potential barrier the explicit relations for relevant times are derived, which reveal that the nonparabolicity, depending on the energy of incident particle, may substantially increase the group time in realistic structures. Further, we extend this theory to the case of absorptive media described by complex potentials, via introduction of a new absorptive tunneling time τ$\text{}_{a}$. Depending on whether the short wavelength or long wavelength limit is considered, maximization of τ$\text{}_{a}$ results in a very different shape of a complex rectangular potential.
Źródło:
Acta Physica Polonica A; 2007, 112, 5; 1037-1042
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor
Autorzy:
Siwiec-Matuszyk, J.
Baj, M.
Babiński, A.
Kasprzak, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046999.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
73.50.Jt
73.21.Fg
73.61.Ey
Opis:
In this paper we show that intersubband scattering can lead to apparent inconsistency of the experimental results obtained by means of classical and quantum transport measurements and this discrepancy is entirely connected with the usage of classical formulae to describe magnetic field dependence of a conductivity tensor. We prove that there is no contradiction in our observations and that the models describing quantum oscillations and magnetic-field dependence of the conductivity tensor, which are present in the literature, complement each other.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 337-344
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Skyrmions in a Hole Gas with Large Spin Gap and Strong Disorder
Autorzy:
Bryja, L.
Ryczko, K.
Wójs, A.
Misiewicz, J.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2046907.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
73.21.Fg
78.20.Ls
78.67.De
Opis:
In the photoluminescence excitation spectra of two-dimensional valence holes with large spin gap and strong disorder we find evidence for quantum Hall ferromagnetism and small skyrmions around the Landau level filling factorν=1. This interpretation is supported by numerical calculations.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 163-168
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
Autorzy:
Juršėnas, S.
Kuokštis, E.
Miasojedovas, S.
Kurilčik, G.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2038100.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 567-573
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
Autorzy:
Juršėnas, S.
Miasojedovas, S.
Kurilčik, G.
Liuolia, V.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Kuokštis, E.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2041736.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 235-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Binding Energy and Oscillator Strength in a Shallow Quantum Well in an External Magnetic Field
Autorzy:
Zięba, P.
Piętka, B.
Łusakowski, J.
Tralle, I.
Powiązania:
https://bibliotekanauki.pl/articles/1402589.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Ji
75.75.-c
73.21.Fg
62.20.-x
Opis:
We discuss the influence of an external magnetic field on the exciton energy and the exciton oscillator strength in the shallow quantum wells. We include into consideration the Coulomb attraction between electron and hole, which is rarely taken into account. We self-consistently solve the Schrödinger equation to compare the obtained results with the experimental values.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 237-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Radiation Induced Spin Photocurrents in Non-Magnetic Low Dimensional Structures
Autorzy:
Ganichev, S. D.
Prettl, W.
Powiązania:
https://bibliotekanauki.pl/articles/2043707.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
72.25.Fe
78.67.-n
73.21.Fg
Opis:
Spin photocurrents generated by homogeneous excitation with terahertz radiation in low dimensional structures are reviewed. Three microscopic mechanisms are responsible for the occurrence of an electric current linked to a uniform spin polarization in a quantum well, the circular photogalvanic effect, the spin-galvanic effect and the magneto-gyrotropic effect. These phenomena provide several methods to investigate various spin properties in low dimensional structures like details of band structure and spin relaxation time.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 581-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Exciton and Trion States in CdTe Quantum Well at High Magnetic Fields
Autorzy:
Andronikov, D.
Platonov, A.
Crooker, S.
Barrick, T.
Karczewski, G.
Kochereshko, V.
Powiązania:
https://bibliotekanauki.pl/articles/2043711.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Ji
73.21.Fg
78.55.Et
78.67.De
Opis:
Temperature dependent photoluminescence and reflectivity spectra of excitons, singlet and triplet states of trions were studied in CdTe-based quantum wells at high magnetic fields. Interesting features of the exciton and trion spectral lines with altering temperatures are explained by analyzing the thermal population and the kinetics of the exciton-electron-trion energetic system.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 653-660
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:
Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:
https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:
The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
Autorzy:
Ivanov, V.
Godlewski, M.
Miasojedovas, S.
Juršėnas, S.
Kazlauskas, K.
Žukauskas, A.
Skierbiszewski, C.
Siekacz, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/1179597.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 225-229
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Scattering of Elastic Waves in a Quasi-One-Dimensional Cavity: Theory and Experiment
Autorzy:
Báez, G.
Cobián-Suárez, M.
Martínez-Argüello, A.
Martínez-Mares, M.
Méndez-Sánchez, R.
Powiązania:
https://bibliotekanauki.pl/articles/1399047.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
46.40.Cd
62.30.+d
03.65.Nk
73.21.Fg
Opis:
We study the scattering of torsional waves through a quasi-one-dimensional cavity both from the experimental and theoretical points of view. The experiment consists of an elastic rod with square cross-section. In order to form a cavity, a notch at a certain distance of one end of the rod was grooved. To absorb the waves, at the other side of the rod, a wedge, covered by an absorbing foam, was machined. In the theoretical description, the scattering matrix S of the torsional waves was obtained. The distribution of S is given by Poisson's kernel. The theoretical predictions show an excellent agreement with the experimental results. This experiment corresponds, in quantum mechanics, to the scattering by a delta potential, in one dimension, located at a certain distance from an impenetrable wall.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 1069-1073
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Local Electric In-Plane Potential Fluctuations in the CdTe/CdMgTe Based Multiple Quantum Wells
Autorzy:
Nogajewski, K.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811966.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.15.Rn
72.80.Ey
73.21.Fg
Opis:
Unusual features in the magnetophotoconductivity spectra registered under far infrared illumination of the CdTe/CdMgTe based multiple quantum wells, uniformly n-doped are presented. It is shown that each spectrum exhibits one or two peaks of non-symmetrical shape, with position of their maxima dependent on the voltage applied to the sample. The peaks, observed in the configuration of the crossed electric and magnetic fields, are strongly shifted by a relatively weak in-plane electric field - of the order of 10-50 V/cm. Two different approaches to explain the observed influence are presented. Both are based on a two-step process leading to the photoconductivity signal. The first approach assumes that only the process of photon absorption is influenced by the external fields, the second one assumes that only the process of phonon assisted electron transfer from the excited donor state into the conduction band is influenced by the external fields.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1259-1265
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Magneto-Optical Response of Diluted Magnetic Semiconductor $CdTe-Cd_{1-x}Mn_{x}Te$ Multi Quantum Wells in the Voigt Configuration
Autorzy:
Hidari, M.
Farjami Shayesteh, S.
Powiązania:
https://bibliotekanauki.pl/articles/1807790.pdf
Data publikacji:
2009-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.30.-j
78.20.Ls
73.21.Fg
Opis:
We have calculated the s- and p-polarized far infrared magnetoplasmon spectra of doped $CdTe-Cd_{1-x}Mn_{x}Te$ multi quantum wells in the presence of a static magnetic field up to 20 T parallel to the surface of the layers using a macroscopic model based on effective medium theory, using a novel approach which gives a good account of the data together with a clear physical interpretation of the various spectral features, such as the free carrier and optical phonon properties. The results show that the transverse optical modes (for the whole composition range, x = 0 to 1) are sensitive and change linearly with respect to the composition parameter. In p-polarized reflectivity the cyclotron resonance experiences a blue shift when the magnetic field strength increases. Also, the analysis of the dielectric tensor function and the Voigt dielectric function is used to determine the carriers' cyclotron effective masses (for both holes and electrons) as a function of composition. Furthermore, a modified random element iso-displacement approach has been extended for the multi layers to analyze the influence of the composition on the optical phonon response in the barrier layer.
Źródło:
Acta Physica Polonica A; 2009, 116, 2; 232-237
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonstandard Absorption on Donors in Uniformly Doped II-VI 0D Structures
Autorzy:
Karpierz, K.
Szot, M.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047383.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.15.Rn
72.80.Ey
73.21.Fg
Opis:
The new approach to the understanding of intrashallow donor transition in the reduced dimensionality systems is presented. The magnetospectroscopy experiments done on the CdTe/CdMgTe quantum well based samples, uniformly n-doped, show indications that the surprising lack of spectral sensitivity on applied photon energy can be understood as a result of sample response coming from its different regions. This "non spectroscopic" behaviour (in a sense of the Zeeman splitting) is a consequence of the properties of systems with reduced dimensionality where variety of centre locations in the structure results in continuous density of states available for absorption.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 237-241
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Nature of Potential Fluctuations in the MBE CdTe/CdMgTe Quantum Well in a Magnetic Field: Experiment and Theory
Autorzy:
Szot, M.
Karpierz, K.
Avetisyan, A. A.
Djotyan, A. P.
Kossut, J.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047014.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.15.Rn
72.80.Ey
73.21.Fg
Opis:
Far infrared photoconductivity spectra of CdTe/Cd$\text{}_{0.8}$Mg$\text{}_{0.2}$Te quantum well uniformly n-type doped with iodine in barriers and in the well were investigated as a function of the magnetic field. The spectra were recorded for several fixed far infrared photon energies and peaks corresponding to intra donor transitions were observed. The magnetic field at which the peaks were observed was the same for all far infrared photon energies used. This is interpreted as an evidence of the presence of fluctuations of the electrostatic potential - quantum dots which reduce the dimensionality of the potential in which a shallow donor is placed. A characteristic size of the fluctuations was found to be of 23-25 nm and 30-40 nm. Theoretical calculations show a nonmonotonic dependence of the electron binding energy on the donor centre in such quantum dot, as a function of magnetic field. This explains why the position of experimentally observed peak is insensitive to far infrared photon energy used. Temperature evolution of spectra and the theoretical model proposed, indicate similarities between fluctuations in the two-dimensional structure investigated and fluctuations in bulk systems.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 379-387
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
Autorzy:
Cywiński, G.
Skierbiszewski, C.
Siekacz, M.
Kryśko, M.
Feduniewicz-Żmuda, A.
Gladysiewicz, M.
Kudrawiec, R.
Misiewicz, J.
Nevou, L.
Kheirodin, N.
Julien, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811923.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.De
68.65.Fg
73.21.Fg
81.15.Hi
Opis:
GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1093-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of Semiconductor Nanostructures with nextnano$\text{}^{3}$
Autorzy:
Birner, S.
Hackenbuchner, S.
Sabathil, M.
Zandler, G.
Majewski, J. A.
Andlauer, T.
Zibold, T.
Morschl, R.
Trellakis, A.
Vogl, P.
Powiązania:
https://bibliotekanauki.pl/articles/2046896.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Cd
73.21.Fg
73.61.Ey
77.65.Ly
85.30.Tv
73.40.Mr
Opis:
nextnano$\text{}^{3}$ is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. For the calculation of the carrier dynamics a drift-diffusion model based on a quantum-mechanically calculated density is employed. In this paper we present an overview of the capabilities of nextnano$\text{}^{3}$ and discuss some of the main equations that are implemented into the code. As examples, we first discuss the strain tensor components and the piezoelectric effect associated with a compressively strained InAs layer for different growth directions, secondly, we calculate self-consistently the quantum mechanical electron density of a Double Gate MOSFET, then we compare the intersubband transitions in a multi-quantum well structure that have been obtained with a single-band effective mass approach and with an 8-band k·p model, and finally, we calculate the energy spectrum of a structure in a uniform magnetic field.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 111-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence of p-Doped Quantum Wells with Strong Spin Splitting
Autorzy:
Boukari, H.
Kossacki, P.
Bertolini, M.
Ferrand, D.
Cibert, J.
Tatarenko, S.
Gaj, J. A.
Deveaud, B.
Ciulin, V.
Powiązania:
https://bibliotekanauki.pl/articles/2038307.pdf
Data publikacji:
2004-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
71.55.Gs
73.21.Fg
75.30.Hx
75.50.Pp
Opis:
Photoluminescence of p-type modulation doped (Cd,Mn)Te quantum wells is studied with carrier density up to 5×10$\text{}^{11}$ cm$\text{}^{-2}$ at various spin splittings. This splitting can be made larger than the characteristic energies of the system thanks to the giant Zeeman effect. At small spin splitting and regardless of the carrier density, the photoluminescence exhibits a single line, which corresponds to the charged exciton in the singlet state. Above a certain spin splitting, the charged exciton is destabilized in favor of the exciton at vanishing hole density, and in favor of a double line at higher carrier density. It is found here that the charged exciton destabilization energy hardly depends on the carrier density. The double line is found to be band-to-band like, with the same initial state - where the holes have the same spin orientation - and final states that differ by some excitation of the 2D hole gas. In addition, the spin splitting needed to fully polarize the hole gas is twice smaller than expected from the single particle image and gives a unique insight into many-body effects in the hole gas.
Źródło:
Acta Physica Polonica A; 2004, 106, 3; 299-310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers
Autorzy:
Vorobjev, L.
Firsov, D.
Shalygin, V.
Panevin, V.
Sofronov, A.
Ustinov, V.
Zhukov, A.
Egorov, A.
Andrianov, A.
Zakhar'in, A.
Ganichev, S.
Danilov, S.
Kozlov, D.
Powiązania:
https://bibliotekanauki.pl/articles/1813218.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Fg
71.55.-i
71.55.Eq
73.21.Fg
73.61.Ey
78.55.Cr
78.66.-w
78.67.De
Opis:
We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 925-928
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
Autorzy:
Syperek, M.
Ryczko, K.
Dallner, M.
Dyksik, M.
Motyka, M.
Kamp, M.
Höfling, S.
Misiewicz, J.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1398579.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.47.D-
78.30.Fs
78.47.jg
78.55.Cr
78.67.De
Opis:
Room temperature carrier kinetics has been investigated in the type-II W-design $AlSb//InAs//Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}//InAs//AlSb$ quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1224-1228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the 2D quantum tunneling
Autorzy:
Mohammadpour, H.
Powiązania:
https://bibliotekanauki.pl/articles/1159450.pdf
Data publikacji:
2016-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
72.10.Bg
72.80.Vp
72.90.+y
73.21.Fg
73.23.-b
73.23.Ad
73.40.Gk
Opis:
In this paper, we have solved a quantum tunneling problem for 2-dimensional systems, including electron gas and graphene. In spite of the one-dimensional scattering problems, in two dimensions, we observe phenomenon of tunneling at energies above the barrier. This effect is an analogue to the total internal reflection in optics. The scattering amplitudes inside the barrier region exhibit decaying behavior corresponding to optical evanescent-wave coupling, not only in energies below barrier height, but also above barrier. Velocity-selecting transmission, corresponding to angle-resolved beam filtering effect is one of the achievements of the paper. The famous Hartman effect which occurs normally at sub-barrier energies and has previously been studied for graphene is also addressed. The results manifest occurrence of the Hartman effect for over-barrier energies, as well.
Źródło:
Acta Physica Polonica A; 2016, 130, 3; 769-772
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
III-Nitride Nanostructures for Infrared Optoelectronics
Autorzy:
Monroy, E.
Guillot, F.
Leconte, S.
Bellet-Amalric, E.
Nevou, L.
Doyennette, L.
Tchernycheva, M.
Julien, F. H.
Baumann, E.
Giorgetta, F.
Hofstetter, D.
Dang, Le Si
Powiązania:
https://bibliotekanauki.pl/articles/2046980.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.67.De
85.60.Gz
85.35.Be
81.15.Hi
81.07.St
Opis:
Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 295-301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optoelectronic Devices Employing One-Dimensional Photonic Structures
Autorzy:
Muszalski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811908.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
73.40.Kp
78.20.Ek
78.40.Fy
78.47.Cd
78.55.Cr
78.60.Fi
78.67.De
Opis:
This paper reviews the experimental and theoretical results obtained during work on the modern semiconductor devices employing one-dimensional photonic structures. After short review of the physical features of structures consisting of 1D stack of the alternating high and low index layers, particular attention will be given to unique features of the devices employing microcavities: resonant cavity LEDs, resonant-cavity enhanced photo-detectors, vertical cavity surface emitting lasers, and also vertical external cavity surface emitting lasers. At the end the semiconductor saturable absorber mirrors are discussed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 983-1000
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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