Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells

We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.