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Wyświetlanie 1-15 z 23
Tytuł:
Impact Ionization Driven Chaotic Photoluminescence Oscillations in Ga$\text{}_{0.47}$In$\text{}_{0.53}$As
Autorzy:
Godlewski, M.
Fronc, K.
Gajewska, M.
Chen, W.M.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1888119.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
72.70.+m
76.90.+d
Opis:
A new application of the Optically Detected Cyclotron Resonance (ODCR) is presented. We report impact ionization studies of bound exciton: (BE) and shallow donor related recombination processes in Ga$\text{}_{0.47}$In$\text{}_{0.53}$As. An appearance of chaotic oscillations in photoluminescence (PL) intensity is observed under condition of impact ionization of deeper donors.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 271-274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Carrier Effects in Optically Detected Cyclotron Resonance Studies of III-V Semiconductors
Autorzy:
Karpińska, K.
Dedulewicz, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920978.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
72.70.+m
76.90.+d
Opis:
The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, are discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 623-626
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Frequency Noise Sources in Quantum Wells
Autorzy:
Ardaravičius, L.
Liberis, J.
Matulionis, A.
Powiązania:
https://bibliotekanauki.pl/articles/2035523.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.70.+m
73.40.Kp
Opis:
Hot-electron noise is investigated for InGaAs and InAs quantum wells containing a two-dimensional electron gas channel in a pulsed electric field applied parallel to the interfaces. Noise sources resulting from hot-electron "thermal" motion, electron temperature fluctuations, and real-space transfer are observed. The experimental results on hot-electron "thermal" noise are used to estimate energy relaxation time in the field range where other sources do not play any important role. Measurements of noise anisotropy in the plane of electron confinement are used to discuss real-space-transfer noise. High-frequency noise technique is used to study hot-electron trapping, and trap location in InAlAs/InGaAs/InAlAs heterostructure channels is determined.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 329-335
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Transport and Magnetic Properties of La$\text{}_{2}\text{}_{/}\text{}_{3}$ Pb$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ Thin Films
Autorzy:
Baran, M.
Berkowski, M.
Fink-Finowicki, J.
Lewandowski, S. J.
Szymczak, H.
Szymczak, R.
Khartchev, S. I.
Medvedev, Yu. V.
Powiązania:
https://bibliotekanauki.pl/articles/2037109.pdf
Data publikacji:
2004
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.-m
72.15.Gd
75.70.Pa
Opis:
The magnetic and transport properties of epitaxial La$\text{}_{2}\text{}_{/}\text{}_{3}$ Pb$\text{}_{1}\text{}_{/}\text{}_{3}$ CuO$\text{}_{3}$ thin films deposited on SrLaGaO$\text{}_{4}$ substrate using dc magnetron sputtering technique are reported. The giant magnetoresistance effect (of about 50% at magnetic field of 1 T) was observed near the Curie temperature. Several mechanisms responsible for temperature dependence of resistivity are discussed. The effect of annealing was studied. It shifted the Curie temperature to the lower value, probably, because of the loss of oxygen.
Źródło:
Acta Physica Polonica A; 2004, 105, 1-2; 115-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling
Autorzy:
Aleshkin, V.
Reggiani, L.
Rosini, M.
Powiązania:
https://bibliotekanauki.pl/articles/1179729.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
72.20.-i
72.30.+q
73.23.Ad
Opis:
The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 298-303
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot-Electron Transport and Microwave Noise in 4H-SiC
Autorzy:
Ardaravičius, L.
Liberis, J.
Kiprijanovič, O.
Matulionienė, I.
Matulionis, A.
Powiązania:
https://bibliotekanauki.pl/articles/2041761.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.70.+m
73.40.Kp
Opis:
Hot-electron transport and microwave noise are investigated for n-type 4H-SiC (n=2×10$\text{}^{17}$ cm$\text{}^{-3}$) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conductance and field ionization increase with lattice temperature. The results on microwave noise are used to evaluate the effective hot-electron temperature and the hot-electron energy relaxation time.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 310-314
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microplasma Noise Stimulated by Microwave Electric Field
Autorzy:
Namajūnas, A.
Tamaševičius, A.
Mykolaitis, G.
Bumelienė, S.
Požela, J.
Powiązania:
https://bibliotekanauki.pl/articles/2041773.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.40.Ca
52.25.Gj
72.70.+m
85.30.-z
Opis:
Si and GaAs avalanche diodes containing microplasmas are investigated. Microwave field applied to the diode in addition to reverse dc bias results in considerable spread of noise spectrum and in the increase of noise power. The microplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh (300 to 1000 MHz) frequency bands, while the effective noise temperature is about 10$\text{}^{8}$ K.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 369-372
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
Autorzy:
Starikov, E.
Shiktorov, P.
Gružinskis, V.
Varani, L.
Vaissière, J. C.
Palermo, C.
Reggiani, L.
Powiązania:
https://bibliotekanauki.pl/articles/2041806.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A$\text{}_{3}$B$\text{}_{5}$ compounds. This property is favorable for applications of nitrides in the THz frequency range.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 408-411
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits
Autorzy:
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Vaissière, J.
Reggiani, L.
Pérez, S.
González, T.
Powiązania:
https://bibliotekanauki.pl/articles/1178800.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 396-399
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique
Autorzy:
Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1813353.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of $10^{15} cm^{-3}$ is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 943-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current Shot Noise and Bunching of Electrons in Multilevel Quantum Dots
Autorzy:
Michałek, G.
Bułka, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813512.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
72.70.+m
Opis:
Currents and their fluctuations in multilevel quantum dots are studied theoretically in the limit of sequential tunneling. The spin degrees of freedom, many-body electronic states (singlet and triplet) as well as relaxation processes between the levels of the quantum dots are considered. In general, due to the rapid relaxation processes the shot noise is sub-Poissonian, however for a large polarization of the outgoing currents from the singlet and triplet states one gets the super-Poissonian type of the shot noise due to the bunching of tunneling events.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 27-30
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
External Noise Effects on the Electron Velocity Fluctuations in Semiconductors
Autorzy:
Persano Adorno, D.
Pizzolato, N.
Spagnolo, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813387.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
05.40.Ca
05.40.-a
Opis:
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover, this random field can cause a suppression of the total noise power.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 985-988
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Frequency Influence on the Hot-Electron Noise Reduction in GaAs Operating under Periodic Signals
Autorzy:
Persano Adorno, D.
Capizzo, M.
Pizzolato, N.
Powiązania:
https://bibliotekanauki.pl/articles/1813386.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
05.40.Ca
72.30.+q
Opis:
A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 979-983
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons
Autorzy:
Matulionis, A.
Liberis, J.
Matulionienė, I.
Ramonas, M.
Powiązania:
https://bibliotekanauki.pl/articles/1813383.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.70.+m
72.80.Ey
Opis:
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 967-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Plasma Instability Noise in InP n⁺nn⁺ Structures: Monte Carlo Simulation
Autorzy:
Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1813377.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
The current noise in n⁺nn⁺ InP structures at dominating low temperature (T = 10 K) optical phonon emission is simulated by Monte Carlo particle technique. The n-region length of simulated structures is varied from 1 to 100 μm. The peaks related to the near collisionless and optical phonon emission dominated plasma instabilities are recognized in current noise spectral density spectra.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 947-950
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 23

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