Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique

Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of $10^{15} cm^{-3}$ is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.