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Wyświetlanie 1-15 z 23
Tytuł:
Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
Autorzy:
Starikov, E.
Shiktorov, P.
Gružinskis, V.
Varani, L.
Vaissière, J. C.
Palermo, C.
Reggiani, L.
Powiązania:
https://bibliotekanauki.pl/articles/2041806.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A$\text{}_{3}$B$\text{}_{5}$ compounds. This property is favorable for applications of nitrides in the THz frequency range.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 408-411
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves
Autorzy:
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Powiązania:
https://bibliotekanauki.pl/articles/1505464.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 117-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits
Autorzy:
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Vaissière, J.
Reggiani, L.
Pérez, S.
González, T.
Powiązania:
https://bibliotekanauki.pl/articles/1178800.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 396-399
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light-Emitting Diode Degradation and Low-Frequency Noise Characteristics
Autorzy:
Šaulys, B.
Matukas, J.
Palenskis, V.
Pralgauskaitė, S.
Kulikauskas, G.
Powiązania:
https://bibliotekanauki.pl/articles/1505229.pdf
Data publikacji:
2011-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
74.40.-n
85.30.-z
85.60.Jb
Opis:
Comprehensive investigation of phosphide-based red and nitride-based blue light-emitting diodes characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations, also their cross-correlation factor) shows that investigated LEDs degradation is caused by defects that lead to the leakage current and non-radiating recombination increase in the active region or its interfaces. Appearance of the defects first of all manifests in noise characteristics: intensive and strongly correlated $1//f^{α}$ type optical and electrical fluctuations come out.
Źródło:
Acta Physica Polonica A; 2011, 119, 4; 514-520
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Noise Characteristics of Side Emitting LEDs
Autorzy:
Šaulys, B.
Kornijčuk, V.
Matukas, J.
Palenskis, V.
Pralgauskaitė, S.
Glemža, K.
Powiązania:
https://bibliotekanauki.pl/articles/1506222.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
74.40.-n
85.60.Jb
Opis:
Low frequency noise characteristics of nitride based blue side emitting diodes have been investigated. It is shown that investigated devices distinguish by $1//f^α$-type optical and electrical fluctuations caused by various generation-recombination processes through defects formed generation-recombination centers. At higher frequencies optical shot noise due to random photon emission prevails $1//f^α$-type spectrum. The results have shown that low frequency optical and electrical noises are strongly correlated at small current region, but at higher forward current not correlated noise components dominate. Lenses and secondary optics of the investigated devices do not influence output light.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 244-246
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise Enhancement due to Telegraphic Switching in a Two-Level Quantum Dot Coupled to Spin-Polarized Leads
Autorzy:
Ptaszyński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1030411.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
73.23.Hk
73.63.Kv
Opis:
Current fluctuations in a two-level quantum dot coupled to the spin-polarized leads are studied by means of the Markovian master equation. It is shown, that transitions between spin configurations of the system cause switching between different current channels, which generates the super-Poissonian noise enhancement and the correlation between subsequent waiting times separating the successive tunneling events.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 526-528
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Waiting Time Correlations in Transport through Two Coupled Quantum Dots
Autorzy:
Ptaszyński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1191206.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
73.23.Hk
73.63.Kv
Opis:
Waiting times between subsequent tunneling events in the double quantum dot system are shown to be correlated. The magnitude and the sign of the cross-correlation depend on the degree and the character of modulation of tunneling rates in the one dot due to the interaction with the charge state of the other, as well as on the relation between different time scales of the system dynamics.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1233-1235
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
External Noise Effects on the Electron Velocity Fluctuations in Semiconductors
Autorzy:
Persano Adorno, D.
Pizzolato, N.
Spagnolo, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813387.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
05.40.Ca
05.40.-a
Opis:
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover, this random field can cause a suppression of the total noise power.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 985-988
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Frequency Influence on the Hot-Electron Noise Reduction in GaAs Operating under Periodic Signals
Autorzy:
Persano Adorno, D.
Capizzo, M.
Pizzolato, N.
Powiązania:
https://bibliotekanauki.pl/articles/1813386.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
05.40.Ca
72.30.+q
Opis:
A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 979-983
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microplasma Noise Stimulated by Microwave Electric Field
Autorzy:
Namajūnas, A.
Tamaševičius, A.
Mykolaitis, G.
Bumelienė, S.
Požela, J.
Powiązania:
https://bibliotekanauki.pl/articles/2041773.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.40.Ca
52.25.Gj
72.70.+m
85.30.-z
Opis:
Si and GaAs avalanche diodes containing microplasmas are investigated. Microwave field applied to the diode in addition to reverse dc bias results in considerable spread of noise spectrum and in the increase of noise power. The microplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh (300 to 1000 MHz) frequency bands, while the effective noise temperature is about 10$\text{}^{8}$ K.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 369-372
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current Shot Noise and Bunching of Electrons in Multilevel Quantum Dots
Autorzy:
Michałek, G.
Bułka, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813512.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
72.70.+m
Opis:
Currents and their fluctuations in multilevel quantum dots are studied theoretically in the limit of sequential tunneling. The spin degrees of freedom, many-body electronic states (singlet and triplet) as well as relaxation processes between the levels of the quantum dots are considered. In general, due to the rapid relaxation processes the shot noise is sub-Poissonian, however for a large polarization of the outgoing currents from the singlet and triplet states one gets the super-Poissonian type of the shot noise due to the bunching of tunneling events.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 27-30
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Statistics of Tunneling Events in Three-Terminal Hybrid Devices with Quantum Dot
Autorzy:
Michałek, G.
Bułka, B.
Domański, T.
Wysokiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1030466.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.45.+c
73.23.Hk
72.70.+m
73.63.Kv
Opis:
We investigate statistics of the tunneling events in the short time limit in terms of the waiting time distribution (WTD), defined as the probability for a delay time between two subsequent transitions of particles, and consider it for a quantum dot (QD) strongly coupled to a superconducting and weakly coupled to two normal electrodes. Our study focuses on the WTD in the subgap transport, when coherent exchange of the Cooper pairs occurs between the QD and the superconductor. The dynamics can be described in terms of a Markovian generalized master equation for the reduced density matrix. We observe coherent oscillations between the Andreev bound states in the correlated jumps, both for the local and non-local WTDs. In addition the analysis of the transient currents give us some insight into dominant relaxation processes in short time scales.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 391-393
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons
Autorzy:
Matulionis, A.
Liberis, J.
Matulionienė, I.
Ramonas, M.
Powiązania:
https://bibliotekanauki.pl/articles/1813383.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.70.+m
72.80.Ey
Opis:
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 967-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay
Autorzy:
Matulionis, A.
Liberis, J.
Matulionienė, I.
Šermukšnis, E.
Leach, J.
Wu, M.
Ni, X.
Morkoç, H.
Powiązania:
https://bibliotekanauki.pl/articles/1506173.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
73.50.Fq
73.61.Ey
Opis:
Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous - the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 225-227
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Carrier Effects in Optically Detected Cyclotron Resonance Studies of III-V Semiconductors
Autorzy:
Karpińska, K.
Dedulewicz, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920978.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
72.70.+m
76.90.+d
Opis:
The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, are discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 623-626
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 23

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