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    Wyświetlanie 1-52 z 52
    Tytuł:
    Reflectivity Study of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se Crystals
    Autorzy:
    Guziewicz, E.
    Kowalski, B. J.
    Orłowski, B. A.
    Szuszkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931782.pdf
    Data publikacji:
    1994-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Fi
    Opis:
    The reflectivity spectra of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se (x = 0.0, 0.024, 0.031) crystals were measured in the vacuum ultraviolet photon energy range from 4 to 12 eV to find the influence of Co ions on the valence band electronic structure of the HgSe crystal. The structure of the reflectivity spectra was interpreted in terms of the electronic band structure of the binary material (HgSe) assuming direct allowed interband transitions.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 5; 875-878
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Zn(Mn)O Surface Alloy Studied by Synchrotron Radiation Photoemission
    Autorzy:
    Guziewicz, E.
    Kopalko, K.
    Sadowski, J.
    Guziewicz, M.
    Golacki, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043720.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.-r
    79.60.-i
    79.60.Jv
    Opis:
    The Mn/ZnO(0001) system was investigated by synchrotron radiation photoemission. The Mn/ZnO interface with 4 ML of manganese deposited onto the ZnO surface was annealed up to 500ºC. No Mn capping layer was found at the surface after annealing as was confirmed by scanning Auger spectroscopy experiment. We used a resonant photoemission to extract the Mn3d partial density of states in photoemission spectra. The Mn3d states contribute to the electronic structure of the system within 10 eV of the Fermi level. They show three features: a main peak at 3.8-4.5 eV, a valence structure at the top of the valence band (1-3 eV), and a broad satellite situated between 5.5 and 9 eV below E$\text{}_{F}$. The satellite/main branching ratio was determined to be 0.43, which is a fingerprint of strong hybridization between the Mn3d electrons and the valence band of the crystal. The hybridization effect in Zn$\text{}_{1-x}$ Mn$\text{}_{x}$O surface alloy is comparable to Zn$\text{}_{1-x}$Mn$\text{}_{x}$S and much higher than in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se, Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te, and Ga$\text{}_{1-x}$Mn$\text{}_{x}$As semimagnetic compounds.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 689-696
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
    Autorzy:
    Witkowski, B.
    Wachnicki, Ł.
    Jakieła, R.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492546.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Hk
    77.55.hf
    68.37.Hk
    61.72.Ff
    Opis:
    Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy
    Autorzy:
    Skrobot, M.
    Godlewski, M.
    Guziewicz, E.
    Kopalko, K.
    Phillips, M. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047005.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.79.-e
    78.66.-w
    81.05.-t
    Opis:
    Monocrystalline films of sphalerite-type ZnSe were grown on GaAs(100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system. Due to color mixing of band edge and deep defect-related emissions these layers emit intensive white light. Depth profiling cathodoluminescence indicates that green and red emissions mostly come from disordered regions of the films, close to the ZnSe/GaAs interface. We tested a possibility of tuning of chromaticity coordinates and of color temperature of the emission. We found that the chromaticity parameters (color perception) can be tuned by either regulating the appropriate accelerating voltage of electrons or current density of primary electrons in cathodoluminescence investigations. These properties of ZnSe films make them suitable for some practical applications as white light sources.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 359-367
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of thin films of high-k oxides grown by atomic layer deposition at low temperature for electronic applications
    Autorzy:
    Gieraltowska, S
    Wachnicki, Ł
    Witkowski, B S
    Godlewski, M
    Guziewicz, E
    Powiązania:
    https://bibliotekanauki.pl/articles/173591.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    high-k oxides
    composite layers
    atomic layer deposition
    transparent electronics
    zinc oxide
    Opis:
    Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In this work, we present the comparison of structural, morphological and electrical properties of binary and composite layers of high-k oxides that include hafnium dioxide (HfO2), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). We deposit thin films of high-k oxides using atomic layer deposition (ALD) and low growth temperature (60–240 °C). Optimal technological growth parameters were selected for the maximum smoothness, amorphous microstructure, low leakage current, high dielectric strength of dielectric thin films, required for gate applications. High quality of the layers is confirmed by their introduction to test electronic structures, such as thin film capacitors, transparent thin film capacitors and transparent thin film transistors. In the latter structure we use semiconductor layers of zinc oxide (ZnO) and insulating layers of high-k oxide grown by the ALD technique at low temperature (no more than 100 °C).
    Źródło:
    Optica Applicata; 2013, 43, 1; 17-25
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    4f Shell of Gd$\text{}^{2+}$ and Gd$\text{}^{3+}$ Ions in Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te - Resonant Photoemission Study
    Autorzy:
    Kowalski, B. J.
    Gołacki, Z.
    Guziewicz, E.
    Orłowski, B.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968282.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.-b
    79.60.-i
    Opis:
    Resonant photoemission spectra of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te (x=0.02 and 0.08) measured for the photon energy range 142 to 151 eV show the valence band density of states distribution and the Gd 4f derived maximum. The energy position of the J=0 component of the Gd 4f maximum was determined and used as a measure of the Gd 4f shell binding energy. The electrostatic model of core level shifts was used to interpret the difference in the Gd 4f binding energies observed for x=0.02 and x=0.08.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 875-878
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of ZnCoO Films and Nanopowders
    Autorzy:
    Wolska, E.
    Łukasiewicz, M.
    Fidelus, J.
    Łojkowski, W.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791349.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    78.55.Et
    81.07.Wx
    61.72.uf
    78.66.Hf
    Opis:
    ZnCoO is one of the most studied and promising semiconductor materials for spintronics applications. In this work we discuss optical and electrical properties of ZnCoO films and nanoparticles grown at low temperature by either atomic layer deposition or by a microwave driven hydrothermal method. We report that doping with cobalt quenches a visible photoluminescence of ZnO. We could observe a visible photoluminescence of ZnO only for samples with very low Co fractions (up to 1%). Mechanisms of photoluminescence quenching in ZnCoO are discussed. We also found that ZnO films remained n-type conductive after doping with Co, indicating that a high electron concentration and cobalt 2+ charge state can coexist.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 918-920
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
    Autorzy:
    Demchenko, I.
    Melikhov, Y.
    Konstantynov, P.
    Ratajczak, R.
    Barcz, A.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030972.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    74.25.Jb
    33.60.+q
    Opis:
    The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 907-909
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-ray Absorption Fine Structure Investigation of the Low Temperature Grown ZnCoO Films
    Autorzy:
    Wolska, A.
    Klepka, M.
    Witkowski, B.
    Witkowski, M.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1431568.pdf
    Data publikacji:
    2012-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Dm
    75.50.Pp
    68.55.-a
    Opis:
    ZnO based diluted magnetic semiconductors are intensively investigated for possible spintronic applications. In the present work we investigate the ZnCoO layers grown at low temperature by atomic layer deposition. The local atomic structure of a series of layers with different Co concentration is investigated by the X-ray absorption fine structure measurements. Two groups of ZnCoO layers are investigated - the ones with an uniform Co distribution and highly nonuniform films. For uniform samples we observe that a majority of Co atoms is built into the ZnO matrix substituting the Zn atoms. In contrast, for the nonuniform samples, metallic Co inclusions are also observed. These results are in strong correlation with the magnetic properties of the films studied separately. Samples with the uniform Co distribution (Co substitutes Zn in ZnO) are paramagnetic, whereas the nonuniform ones show a ferromagnetic response.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 4; 883-887
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method
    Autorzy:
    Wachnicki, Ł.
    Witkowski, B.
    Gierałtowska, S.
    Kopalko, K.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492916.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Bc
    82.47.Rs
    68.55.-a
    81.15.Aa
    Opis:
    Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 905-907
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electronic Band Structure of Cubic HgS
    Autorzy:
    Guziewicz, E.
    Kowalski, B.
    Orłowski, B. A.
    Dybko, K.
    Witkowska, B.
    Szuszkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873013.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Fi
    Opis:
    Reflectivity spectra of Hg$\text{}_{1-x}$Fe$\text{}_{x}$S (x < 0.04) and HgSe$\text{}_{1-y}$S$\text{}_{y}$ (y < 0.5) mixed crystals were measured in the vacuum ultraviolet energy range from 4 to 12 eV. Information about the electronic band structure of cubic modification of HgS resulting from the above data is analyzed and discussed.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 395-398
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
    Autorzy:
    Nadolny, A. J.
    Guziewicz, E.
    Kowalski, B. J.
    Orłowski, B. A.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992049.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Nr
    Opis:
    The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 454-458
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synchrotron Photoemission Study of Ferromagnetic (Zn,Co)O Films
    Autorzy:
    Guziewicz, E.
    Lukasiewicz, M.
    Wachnicki, L.
    Kopalko, K.
    Dłużewski, P.
    Jakiela, R.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492604.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.At
    75.50.Pp
    81.05.Dz
    81.15.Gh
    Opis:
    The electronic structure of ferromagnetic (Zn,Co)O films was investigated by resonant photoemission across the Co 3p → Co 3d photoionization threshold, e.g. using photon energy between 50 eV and 66 eV. The films were grown by atomic layer deposition at temperature between 160C and 300C and they differed in distribution and content of cobalt. The maximum of the Fano resonance was observed at photon energy 63 eV, whereas the minimum at 58 eV. The difference between energy distribution curves taken at 63 eV and the one taken at 58 eV was calculated for a series of samples. It shows that the Co 3d contribution to the valence band electronic structure of ferromagnetic (Zn,Co)O films differs significantly from that of the films which show the paramagnetic response.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-040-A-042
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
    Autorzy:
    Wachnicki, L.
    Gieraltowska, S.
    Witkowski, B.
    Figge, S.
    Hommel, D.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399138.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Kk
    61.05.cp
    81.05.Dz
    Opis:
    An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 869-872
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture
    Autorzy:
    Godlewski, M.
    Guziewicz, E.
    Gierałtowska, S.
    Łuka, G.
    Krajewski, T.
    Wachnicki, Ł.
    Kopalko, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807598.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.35.-p
    73.40.Lq
    73.40.Qv
    81.05.Dz
    81.15.-z
    Opis:
    We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator $HfO_{2}$. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-19-S-21
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cd_{1-x}Fe_{x}Te Ternary Crystal Formation Studied by Resonant Photoemission
    Autorzy:
    Guziewicz, E.
    Kowalski, B. J.
    Gołacki, Z.
    Orłowski, B. A.
    Johnson, R. L.
    Masek, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968113.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    79.60.-i
    Opis:
    A resonant photoemission was used to study the ternary crystal formation, when small amount of Fe atoms was deposited (in one monolayer range of thickness) on the clean CdTe(100) surface. The constant initial state spectra taken near the Fe 3p-3d transition after Fe deposition and then again after heating process show the existence of two Fano-like resonance. The differences of the energy distribution curves taken for both resonance and antiresonance, respectively, allow us to distinguish two kind of Fe 3d contributions to the valence band: one derived from the metallic Fe islands on the surface and the second - derived from the Fe atoms built into the Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te crystal.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 793-796
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    4f Contribution to Valence Band of Pb$\text{}_{1-x}$RE$\text{}_{x}$S (RE = Eu,Gd) Studied by Resonant Photoemission
    Autorzy:
    Kowalski, B. J.
    Gołacki, Z.
    Guziewicz, E.
    Orłowski, B. A.
    Ghijsen, J.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952558.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    79.60.-i
    Opis:
    Resonant photoemission experiments were carried out in order to reveal the contributions of partly filled Eu 4f$\text{}^{7}$ and Gd 4f$\text{}^{7}$ shells to the valence bands of Pb$\text{}_{0.95}$Eu$\text{}_{0.05}$S and Pb$\text{}_{0.95}$Gd$\text{}_{0.05}$S crystals. The coupling between these orbitals and the host electronic states is discussed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1035-1039
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Photoemission Study of Gd 4f States in IV-VI Crystals
    Autorzy:
    Kowalski, B. J.
    Gołacki, Z.
    Guziewicz, E.
    Orłowski, B. A.
    Ghijsen, J.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963391.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    Opis:
    Resonant photoemission experiments were performed in order to reveal the contributions of half-filled Gd 4f$\text{}^{7}$ shell to the electronic structures of Sn$\text{}_{0.95}$Gd$\text{}_{0.05}$Te and Pb$\text{}_{0.95}$Gd$\text{}_{0.05}$S crystals. The influences of the Gd 4f$\text{}^{6}$ final-state multiplet splitting and f-ligand hybridization on the shapes of the spectra are discussed.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 819-823
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition
    Autorzy:
    Łukasiewicz, M.
    Cabaj, A.
    Godlewski, M.
    Guziewicz, E.
    Wittlin, A.
    Jaworski, M.
    Wołoś, A.
    Wilamowski, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492931.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 911-913
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
    Autorzy:
    Kowalski, B. J.
    Guziewicz, E.
    Kopalko, K.
    Orłowski, B. A.
    Janik, E.
    Wojtowicz, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991616.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Nr
    79.60.-i
    Opis:
    Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 401-405
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Visible Luminescence from Porous Silicon
    Autorzy:
    Bała, W.
    Firszt, F.
    Nossarzewska-Orłowska, E.
    Brzozowski, A.
    Orłowski, B. A.
    Kowalski, B. J.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929748.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    Opis:
    This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 761-764
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrostatic Gates for GaN/AlGaN Quantum Point Contacts
    Autorzy:
    Czapkiewicz, M.
    Cywiński, G.
    Dybko, K.
    Siekacz, M.
    Wolny, P.
    Gierałtowska, S.
    Guziewicz, E.
    Skierbiszewski, C.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403637.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.61.Ng
    73.23.-b
    Opis:
    We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of $HfO_2$ or $Al_2O_3//HfO_2$ composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current $I_g < 10^{-11}$ A at gate voltages $|V_g|$ < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at $V_g$ = - 3.5 V at a cost of $I_g ≈ 10^{-6} A$, which has been identified as a bulk leakage current.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1026-1028
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    (Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
    Autorzy:
    Łukasiewicz, M.
    Witkowski, B.
    Wachnicki, Ł.
    Kopalko, K.
    Gierałtowska, S.
    Wittlin, A.
    Jaworski, M.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492571.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cathodoluminescence Profiling for Checking Uniformity of ZnO and ZnCoO Thin Films
    Autorzy:
    Witkowski, B. S.
    Łukasiewicz, M. I.
    Wolska, E. A.
    Kopalko, K.
    Kowalski, B. J.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048105.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    78.30.Fs
    78.60.Hk
    Opis:
    We employ scanning electron microscopy and cathodoluminescence for evaluation of uniformity of ZnCoO films obtained by the atomic layer deposition. Cathodoluminescence quenching by Co ions allows us to detect (regions of weaker light emission) Co accumulations, with the resolution limited by diffusion length of secondary carriers.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 675-677
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
    Autorzy:
    Guziewicz, E.
    Szamota-Sadowska, K.
    Kowalski, B. J.
    Grodzicka, E.
    Story, T.
    Orłowski, B. A.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963380.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    79.60.-i
    Opis:
    We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 783-787
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
    Autorzy:
    Ratajczak, R.
    Stonert, A.
    Guziewicz, E.
    Gierałtowska, S.
    Krajewski, T.
    Luka, G.
    Wachnicki, L.
    Witkowski, B.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400467.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    81.05.Dz
    81.15.Hi
    68.55.ag
    82.80.Yc
    61.85.+p
    Opis:
    The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 899-903
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Response of ZnO/GaN Heterostructure to Ion Irradiation
    Autorzy:
    Barcz, A.
    Pągowska, K.
    Kozubal, M.
    Guziewicz, E.
    Borysiewicz, M.
    Dyczewski, J.
    Jakieła, R.
    Ratajczak, J.
    Snigurenko, D.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402192.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    61.85.+p
    68.35.Dv
    Opis:
    In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 832-835
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cd$\text{}_{1-x}$Fe$\text{}_{x}$Se/Fe Interface Formation Observed by Means of Photoemission Spectroscopy
    Autorzy:
    Guziewicz, E.
    Orłowski, B. A.
    Kowalski, B. J.
    Barrett, N.
    Martinotti, D.
    Guillot, C.
    Lacharme, J.-P.
    Sebenne, C. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950803.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.-r
    79.60.Jv
    Opis:
    We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 805-808
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO by ALD - Advantages of the Material Grown at Low Temperature
    Autorzy:
    Guziewicz, E.
    Godlewski, M.
    Krajewski, T.
    Wachnicki, Ł.
    Łuka, G.
    Paszkowicz, W.
    Domagała, J.
    Przeździecka, E.
    Łusakowska, E.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791286.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    72.80.Ey
    Opis:
    The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 814-817
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition
    Autorzy:
    Łuka, G.
    Krajewski, T.
    Szczerbakow, A.
    Łusakowska, E.
    Kopalko, K.
    Guziewicz, E.
    Wachnicki, Ł.
    Szczepanik, A.
    Godlewski, M.
    Fidelus, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811956.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.J-
    73.40.Lq
    81.05.Lg
    Opis:
    We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1229-1234
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure Dependent Conductivity of Ultrathin ZnO Films
    Autorzy:
    Snigurenko, D.
    Kopalko, K.
    Krajewski, T.
    Łuka, G.
    Gierałtowska, S.
    Witkowski, B.
    Godlewski, M.
    Dybko, K.
    Paszkowicz, W.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403646.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    81.15.Gh
    Opis:
    Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1042-1044
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of ZnO Films Grown at Low Temperature
    Autorzy:
    Przeździecka, E.
    Krajewski, T.
    Wójcik-Głodowska, A.
    Yatsunenko, S.
    Łusakowska, E.
    Paszkowicz, W.
    Guziewicz, E.
    Wachnicki, Ł.
    Szczepanik, A.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811975.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    81.10.-h
    85.30.Fg
    Opis:
    ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1303-1310
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
    Autorzy:
    Gierałtowska, S.
    Sztenkiel, D.
    Guziewicz, E.
    Godlewski, M.
    Łuka, G.
    Witkowski, B. S.
    Wachnicki, Ł.
    Łusakowska, E.
    Dietl, T.
    Sawicki, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048118.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    77.55.-g
    77.84.Bw
    81.05.Ea
    Opis:
    We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 692-695
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
    Autorzy:
    Łukasiewicz, M.
    Witkowski, B.
    Godlewski, M.
    Guziewicz, E.
    Sawicki, M.
    Paszkowicz, W.
    Łusakowska, E.
    Jakieła, R.
    Krajewski, T.
    Kowalik, I.
    Kowalski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791350.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 921-923
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
    Autorzy:
    Krajewski, T.
    Luka, G.
    Smertenko, P.
    Zakrzewski, A.
    Dybko, K.
    Jakiela, R.
    Wachnicki, L.
    Gieraltowska, S.
    Witkowski, B.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492501.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    73.50.-h
    73.50.Bk
    73.61.Ga
    81.15.-z
    81.15.Gh
    Opis:
    The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor
    Autorzy:
    Kowalik, I. A.
    Guziewicz, E.
    Kopalko, K.
    Yatsunenko, S.
    Godlewski, M.
    Wójcik, A.
    Osinniy, V.
    Krajewski, T.
    Story, T.
    Łusakowska, E.
    Paszkowicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047710.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.66.Hf
    81.15.Kk
    Opis:
    ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 401-406
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
    Autorzy:
    Grzanka, S.
    Łuka, G.
    Krajewski, T. A.
    Guziewicz, E.
    Jachymek, R.
    Purgal, W.
    Wiśniewska, R.
    Sarzyńska, A.
    Bering-Staniszewska, A.
    Godlewski, M.
    Perlin, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048094.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    73.40.Kp
    73.40.Lq
    Opis:
    Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 672-674
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic, Structural, and Optical Properties of Low Temperature ZnMnO Grown by Atomic Layer Epitaxy
    Autorzy:
    Wójcik, A.
    Kiecana, M.
    Kopalko, K.
    Godlewski, M.
    Guziewicz, E.
    Yatsunenko, S.
    Łusakowska, E.
    Minikayev, R.
    Paszkowicz, W.
    Świątek, K.
    Wilamowski, Z.
    Sawicki, M.
    Dietl, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044552.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Jk
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    Magnetic, structural, and optical properties of ZnMnO films grown with atomic layer epitaxy are discussed. Atomic layer epitaxy films were grown at low temperature using organic zinc and manganese precursors. From magnetometry and electron spin resonance investigations we conclude that lowering of a growth temperature significantly limits formation of Mn precipitates and inclusions of different foreign phases of manganese oxides to ZnMnO host.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 915-921
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
    Autorzy:
    Wachnicki, Ł.
    Dużyńska, A.
    Domagala, J.
    Witkowski, B.
    Krajewski, T.
    Przeździecka, E.
    Guziewicz, M.
    Wierzbicka, A.
    Kopalko, K.
    Figge, S.
    Hommel, D.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492723.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Aa
    61.05.cp
    81.05.Dz
    Opis:
    Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors
    Autorzy:
    Łukasiewicz, M.
    Wójcik-Głodowska, A.
    Guziewicz, E.
    Jakieła, R.
    Krajewski, T.
    Łusakowska, E.
    Paszkowicz, W.
    Minikayev, R.
    Kiecana, M.
    Sawicki, M.
    Godlewski, M.
    Wachnicki, Ł.
    Szczepanik, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811957.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature ($T_s$=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1235-1240
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Yb on Valence Band Density of States of CdYbTe and PbYbTe - a Resonant Photoemission Study
    Autorzy:
    Szamota-Sadowska, K.
    Kowalski, B. J.
    Guziewicz, E.
    Orłowski, B. A.
    Sadowski, J.
    Gołacki, Z.
    Ghijsen, J.
    Johnson, R. L.
    Belkhou, R.
    Radosavkič, D.
    Martinotti, D.
    Barrett, N.
    Guillot, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952185.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Vv
    Opis:
    Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f$\text{}^{14}$ were observed at the binding energies close to the edge of the valence band while the 4f$\text{}^{13}$ states were revealed deep in the valence band.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 943-946
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Do We Understand Magnetic Properties of ZnMnO?
    Autorzy:
    Godlewski, M.
    Wójcik, A.
    Kopalko, K.
    Ivanov, V. Yu.
    Wilamowski, Z.
    Jakieła, R.
    Guziewicz, E.
    Szczepanik, A.
    Dłużewski, P.
    Chikoidze, E.
    Barjon, J.
    Dumont, Y.
    Putkonen, M.
    Niinistö, L.
    Tang, Dong
    Powiązania:
    https://bibliotekanauki.pl/articles/2047644.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    75.75.+a
    78.30.Fs
    78.60.Hk
    Opis:
    Optical and magnetic properties of ZnMnO films are discussed based on the results of cathodoluminescence, photoluminescence, and magneto-photoluminescence investigations. We show that photoluminescence/cathodoluminescence emissions are strongly quenched and become in-plane inhomogeneous in samples with increased Mn fractions. Strong polarization of photoluminescence is observed, even though excitonic lines do not shift and are not split at magnetic fields up to 6 T.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 261-267
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hole Traps in ZnTe with CdTe Quantum Dots
    Autorzy:
    Zielony, E.
    Płaczek-Popko, E.
    Gumienny, Z.
    Trzmiel, J.
    Karczewski, G.
    Guziewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791335.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    73.21.La
    73.20.Hb
    Opis:
    In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 885-887
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
    Autorzy:
    Piotrowska, A.
    Kamińska, E.
    Guziewicz, M.
    Adamczewska, J.
    Kwiatkowski, S.
    Turos, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923915.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    Opis:
    Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 857-860
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP
    Autorzy:
    Piotrowska, A.
    Kamińska, E.
    Guziewicz, M.
    Veresegyhazy, R.
    Mojzes, I.
    Pecz, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891383.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    Opis:
    Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 457-460
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Materials Technology for GaSb-Based optoelectronic Devices
    Autorzy:
    Piotrowska, A.
    Kamińska, E.
    Piotrowski, T. T.
    Piskorski, M.
    Guziewicz, M.
    Papis, E.
    Gołaszewska-Malec, K.
    Kasjuniuk, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952070.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    81.05.Ea
    81.40.-z
    Opis:
    A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 903-906
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Shallow Ohmic Contact System to n-GaAs
    Autorzy:
    Kamińska, E.
    Piotrowska, A.
    Piotrowski, T. T.
    Barcz, A.
    Guziewicz, M.
    Adamczewska, J.
    Kwiatkowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929764.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    Opis:
    Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 804-806
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
    Autorzy:
    Taube, A.
    Guziewicz, M.
    Kosiel, K.
    Gołaszewska-Malec, K.
    Król, K.
    Kruszka, R.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/953063.pdf
    Data publikacji:
    2016
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    aluminum oxide
    MOS
    silicon carbide
    4H-SiC
    high-K dielectrics
    tlenek glinu
    węglik krzemu
    dielektryki high-k
    Opis:
    The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 537-551
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Levels Induced by CdTe/ZnTe Quantum Dots
    Autorzy:
    Zielony, E.
    Placzek-Popko, E.
    Roznicka, A.
    Gumienny, Z.
    Szatkowski, J.
    Dyba, P.
    Pacuski, W.
    Kruse, C.
    Hommel, D.
    Guziewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048061.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    73.21.La
    73.20.Hb
    Opis:
    The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 630-632
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ohmic Contacts To GaN by Solid-Phase Regrowth
    Autorzy:
    Kamińska, E.
    Piotrowska, A.
    Barcz, A.
    Ilka, L.
    Guziewicz, M.
    Kasjaniuk, S.
    Dynowska, E.
    Kwiatkowski, S.
    Bremser, M. D.
    Davis, R. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968123.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    73.40.Cg
    Opis:
    Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10$\text{}^{-3}$ Ωcm$\text{}^{2}$ and ≈1×10$\text{}^{-2}$ Ωcm$\text{}^{2}$ to GaN:Si (n ≈ 2×10$\text{}^{17}$ cm$\text{}^{-3}$) and GaN:Mg (p ≈ 3×10$\text{}^{17}$ cm$\text{}^{-3}$). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 819-823
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe
    Autorzy:
    Kamińska, E.
    Piotrowska, A.
    Guziewicz, M.
    Gierlotka, S.
    Papis, E.
    Łusakowski, J.
    Szadkowski, K.
    Kwiatkowski, S.
    Dietl, T.
    Grabecki, G.
    Jaroszyński, J.
    Karczewski, G.
    Zakrzewski, A. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873052.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    Opis:
    The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of contacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 411-414
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts
    Autorzy:
    Piotrowska, A.
    Kamińska, E.
    Piotrowski, T.
    Kasjaniuk, S.
    Guziewicz, M.
    Gierlotka, S.
    Lin, X. W.
    Liliental-Weber, Z.
    Washburn, J.
    Kwiatkowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873078.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    Opis:
    Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decomposes was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metallization is not a good candidate for device quality ohmic contacts to GaSb-based devices.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 419-422
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-52 z 52

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