Cd$\text{}_{1-x}$Fe$\text{}_{x}$Se/Fe Interface Formation Observed by Means of Photoemission Spectroscopy

We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.