Skocz do pozycji: 1.

Tytuł:

Development of Superior Thermal Protective Coating on Carbon Composites

Autorzy:

Bae, Soo Bin
Lee, Ji Eun
Paik, Jong Gyu
Cho, Nam Choon
Lee, Hyung Ik

Powiązania:

https://bibliotekanauki.pl/articles/354076.pdf

Data publikacji:

2020

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

composite
silicon carbide
CVR
CVD

Opis:

A superior SiC based thermal protection coating process for carbon composite, which can be especially effective in a hot oxidizing atmosphere, was established in this study. A multi-coating process based on a combination of Chemical Vapor Reaction (CVR) and Chemical Vapor Deposition (CVD) was developed. Various protective coating layers on carbon composite were tested in hot oxidizing surroundings and the test results verified that the thermal ablation rate could be dramatically reduced down to 3.8% when the protective multi-coating was applied. The thermal protection mechanism of the coating layers was also investigated.

Źródło:

Archives of Metallurgy and Materials; 2020, 65, 4; 1371-1375
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 2.

Tytuł:

Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface

Autorzy:

Grodzicki, M
Mazur, P
Wasielewski, R
Ciszewski, A

Powiązania:

https://bibliotekanauki.pl/articles/173424.pdf

Data publikacji:

2013

Wydawca:

Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej

Tematy:

silicon carbide
chromium
electric contacts
graphitization

Opis:

Ohmic electrical contacts were formed at room temperature on n-type, Si-oriented 6H-SiC substrates, with Cr layers vapor-deposited under ultra-high vacuum conditions on the samples being graphitized prior to the deposition. The contacts reveal a very good linearity of the local I–V characteristics. This method of ohmic contact formation does not require the use of samples with high doping concentration and the application of high-temperature annealing during the processing of contacts. Results of characterization of the contacts and of the in situ graphitization process of the SiC substrates, obtained by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and atomic force microscopy (AFM) with conducting tip, are given in this paper.

Źródło:

Optica Applicata; 2013, 43, 1; 91-98
0078-5466
1899-7015

Pojawia się w:

Optica Applicata

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 3.

Tytuł:

TiAl-based Ohmic Contacts to p-type 4H-SiC

Autorzy:

Martychowiec, Agnieszka
Kwietniewski, Norbert
Kondracka, Kinga
Werbowy, Aleksander
Sochacki, Mariusz

Powiązania:

https://bibliotekanauki.pl/articles/1844507.pdf

Data publikacji:

2021

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

ohmic contact
SiC
silicon carbide
TiAl

Opis:

This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.

Źródło:

International Journal of Electronics and Telecommunications; 2021, 67, 3; 459-463
2300-1933

Pojawia się w:

International Journal of Electronics and Telecommunications

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 4.

Tytuł:

Modelling of changes in the resistivity of semi-insulating materials

Autorzy:

Suproniuk, Marek

Powiązania:

https://bibliotekanauki.pl/articles/1849000.pdf

Data publikacji:

2021

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

resistivity
semiconductor
gallium phosphide
silicon carbide

Opis:

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).

Źródło:

Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229

Pojawia się w:

Metrology and Measurement Systems

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 5.

Tytuł:

Modelling of changes in the resistivity of semi-insulating materials

Autorzy:

Suproniuk, Marek

Powiązania:

https://bibliotekanauki.pl/articles/1849019.pdf

Data publikacji:

2021

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

resistivity
semiconductor
gallium phosphide
silicon carbide

Opis:

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).

Źródło:

Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229

Pojawia się w:

Metrology and Measurement Systems

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 6.

Tytuł:

Modelling of changes in the resistivity of semi-insulating materials

Autorzy:

Suproniuk, Marek

Powiązania:

https://bibliotekanauki.pl/articles/1849057.pdf

Data publikacji:

2021

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

resistivity
semiconductor
gallium phosphide
silicon carbide

Opis:

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).

Źródło:

Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229

Pojawia się w:

Metrology and Measurement Systems

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 7.

Tytuł:

Selection of 5 kW Converter Leg for Power Electronic System

Autorzy:

Zygmanowski, M.
Michalak, J.
Jeleń, M.
Jarek, G.

Powiązania:

https://bibliotekanauki.pl/articles/973060.pdf

Data publikacji:

2017

Wydawca:

Stowarzyszenie Inżynierów i Techników Mechaników Polskich

Tematy:

IGBT
Silicon Carbide (SiC)
MOSFET
Inverter
Microgrid

Opis:

Three converter leg variants are analyzed for low power converter used for power electronic system for residential buildings. The two-level Si-IGBT and SiC-MOSFET converters are compared with Si-IGBT three-level T-type converter. Power losses generated in each of these converters over a predicted period of 20 years of operation are contrasted with the cost of converter options. The detailed selection procedure for output inductor is presented in this paper. This procedure shows the influence of the inductor parameters like number of turns, air gap length on its losses, cost and size. Theoretical approach is verified with simulations and experimental results.

Źródło:

Measurement Automation Monitoring; 2017, 63, 8; 282-287
2450-2855

Pojawia się w:

Measurement Automation Monitoring

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 8.

Tytuł:

Manufacturing and Wear Properties of SiC Coating Layer on Zr alloy Fabricated by Vacuum Kinetic Spray Process

Autorzy:

Ham, Gi-Su
Kim, Kyu-Sik
Lee, Kee-Ahn

Powiązania:

https://bibliotekanauki.pl/articles/356701.pdf

Data publikacji:

2019

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

vacuum kinetic spray
silicon carbide
microstructure
wear

Opis:

This study manufactured a SiC coating layer using the vacuum kinetic spray process and investigated its microstructure and wear properties. SiC powder feedstock with a angular shape and average particle size of 37.4 μm was used to manufacture an SiC coating layer at room temperature in two different process conditions (with different degrees of vacuum). The thickness of the manufactured coating layers were approximately 82.4 μm and 129.4 μm, forming a very thick coating layers. The SiC coating layers consisted of α-SiC and β-SiC phases, which are identical to the feedstock. Cross-sectional observation confirmed that the SiC coating layer formed a dense structure. In order to investigate the wear properties, ball crater tests were performed. The wear test results confirmed that the SiC coating layer with the best wear resistance achieved approximately 4.16 times greater wear resistance compared to the Zr alloy. This study observed the wear surface of the vacuum kinetic sprayed SiC coating layer and identified its wear mechanism. In addition, the potential applications of the SiC coating layer manufactured using the new process were also discussed.

Źródło:

Archives of Metallurgy and Materials; 2019, 64, 2; 519-523
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 9.

Tytuł:

Comparative investigation of SiC and Si power electronic devices operating at high switching frequency

Autorzy:

Zymmer, K.
Mazurek, P.

Powiązania:

https://bibliotekanauki.pl/articles/200057.pdf

Data publikacji:

2011

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

semiconductor devices
silicon carbide
high frequency converters

Opis:

The paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/ěs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10–200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.

Źródło:

Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 4; 555-559
0239-7528

Pojawia się w:

Bulletin of the Polish Academy of Sciences. Technical Sciences

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 10.

Tytuł:

Properties of the Aluminium Alloy EN AC-51100 after Laser Surface Treatment

Autorzy:

Tański, T.
Pakieła, W.
Janicki, D.
Tomiczek, B.
Król, M.

Powiązania:

https://bibliotekanauki.pl/articles/353290.pdf

Data publikacji:

2016

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

laser treatment
aluminium alloy
silicon carbide
wear resistance

Opis:

In this paper, the influence of a laser surface treatment on the structure and properties of aluminium alloy has been determined. The aim of this work was to improve the tribological properties of the surface layer of the EN AC-51100 aluminium alloy by simultaneously melting and feeding silicon carbide particles into the molten pool. The silicon carbide powder was introduced into the liquid metal using a gravity feeder within a constant feed rate of 1 g/min. A high power diode laser (HPDL) was used for remelting. Laser beam energies used in experiments were 1.8 kW, 2.0 kW and 2.2 kW, combined with the constant velocity of 50 mm/min. As a result of the laser treatment on the aluminium alloy, a composite layer with greater hardness and wear resistance compared to the based material was obtained.

Źródło:

Archives of Metallurgy and Materials; 2016, 61, 1; 199-204
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 11.

Tytuł:

DC characteristics of the SiC Schottky diodes

Autorzy:

Janke, W.
Hapka, A.
Oleksy, M.

Powiązania:

https://bibliotekanauki.pl/articles/202279.pdf

Data publikacji:

2011

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

silicon carbide
Schottky diodes
static characteristics
high-temperature

Opis:

The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained. In the presented investigations, for relatively high currents and ambient temperatures, the influence of self-heating on the SiC Schottky diodes static characteristics is significant. The large (even 4 V for the ambient temperature 300.C ) values of voltages corresponding to the nominal diode currents have been observed.

Źródło:

Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 2; 183-188
0239-7528

Pojawia się w:

Bulletin of the Polish Academy of Sciences. Technical Sciences

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 12.

Tytuł:

Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices

Autorzy:

Trochimiuk, P.
Zdanowski, M.
Rabkowski, J.

Powiązania:

https://bibliotekanauki.pl/articles/201436.pdf

Data publikacji:

2019

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

inverters
silicon carbide
power MOSFET
battery
energy storage

Opis:

This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional – it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% – peak value is 97.8%.

Źródło:

Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 6; 1085-1094
0239-7528

Pojawia się w:

Bulletin of the Polish Academy of Sciences. Technical Sciences

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 13.

Tytuł:

Conducted EMI performance comparison of Si and SiC MOSFETS in a CCM boost PFC converter for MIL-STD-461F CE102

Autorzy:

Kavak, H.
Iskender, I.
Jahi, A.

Powiązania:

https://bibliotekanauki.pl/articles/378353.pdf

Data publikacji:

2018

Wydawca:

Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej

Tematy:

CCM Boost converter
silicon
silicon carbide
conducted EMI
CE102

Opis:

This paper presents a comparison of conducted EMI performance of Si and SiC MOSFETs in a CCM PFC boost converter that is designed to meet CE102 of MIL-STD- 461F. EMI performance comparison is based on MOSFET of the PFC converter. That is, the power switch of the converter is the only parameter that is changed during tests. The boost diode is kept the same during the tests and the type of the boost diode is SiC. The paper shows the CE102 test results of Si and SiC MOSFETs without an EMI filter at the input side of CCM PFC boost converter.

Źródło:

Poznan University of Technology Academic Journals. Electrical Engineering; 2018, 95; 87-94
1897-0737

Pojawia się w:

Poznan University of Technology Academic Journals. Electrical Engineering

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 14.

Tytuł:

High Temperature Oxidation Property of SiC Coating Layer Fabricated by Aerosol Deposition Process

Autorzy:

Ham, G.-S.
Kim, S.-H.
Park, J.-Y.
Lee, K.-A.

Powiązania:

https://bibliotekanauki.pl/articles/352142.pdf

Data publikacji:

2017

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

silicon carbide
aerosol deposition
coating
high temperature oxidation

Opis:

This study investigated the high temperature oxidation property of SiC coated layer fabricated by aerosol deposition process. SiC coated layer could be successfully manufactured by using pure SiC powders and aerosol deposition on the Zr based alloy in an optimal process condition. The thickness of manufactured SiC coated layer was measured about 5 μm, and coating layer represented high density structure. SiC coated layer consisted of α-SiC and β-SiC phases, the same as the initial powder. The initial powder was shown to have been crushed to the extent and was deposited in the form of extremely fine particles. To examine the high temperature oxidation properties, oxidized weight gain was obtained for one hour at 1000°C by using TGA. The SiC coated layer showed superior oxidation resistance property than that of Zr alloy (substrate). The high temperature oxidation mechanism of SiC coated layer on Zr alloy was suggested. And then, the application of aerosol deposited SiC coated layer was also discussed.

Źródło:

Archives of Metallurgy and Materials; 2017, 62, 2B; 1347-1351
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 15.

Tytuł:

A current-source concept for fast and efficient driving of silicon carbide transistors

Autorzy:

Rąbkowski, J.

Powiązania:

https://bibliotekanauki.pl/articles/141047.pdf

Data publikacji:

2013

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

silicon carbide transistors
gate drivers
current-source
switching process

Opis:

The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.

Źródło:

Archives of Electrical Engineering; 2013, 62, 2; 333-343
1427-4221
2300-2506

Pojawia się w:

Archives of Electrical Engineering

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 16.

Tytuł:

Extended T-type inverter

Autorzy:

Rąbkowski, J.
Kopacz, R.

Powiązania:

https://bibliotekanauki.pl/articles/1193496.pdf

Data publikacji:

2018

Wydawca:

Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej

Tematy:

multilevel inverter
T-type inverter
boost converter
silicon carbide

Opis:

This paper presents a new concept for a power electronic converter – the extended T-type (eT) inverter, which is a combination of a three-phase inverter and a three-level direct current (dc)/dc converter. The novel converter shows better performance than a comparable system composed of two converters: a T-type inverter and a boost converter. At first, the three-level dc/dc converter is able to boost the input voltage but also affects the neutral point potential. The operation principles of the eT inverter are explained and a simulation study of the SiC-based 6 kVA system is presented in this paper. Presented results show a serious reduction of the DC-link capacitors and the input inductor. Furthermore, suitable SiC power semiconductor devices are selected and power losses are estimated using Saber software in reference to a comparative T-type inverter. According to the simulations, the 50 kHz/6 kVA inverter feed from the low voltage (250 V) shows <2.5% of power losses in the suggested SiC metal oxide–semiconductor field-effect transistors (MOSFETs) and Schottky diodes. Finally, a 6 kVA laboratory model was designed, built and tested. Conducted measurements show that despite low capacitance (2 × 30 μF/450 V), the neutral point potential is balanced, and the observed efficiency of the inverter is around 96%.

Źródło:

Power Electronics and Drives; 2018, 3, 38; 55-64
2451-0262
2543-4292

Pojawia się w:

Power Electronics and Drives

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 17.

Tytuł:

Influence of Material Coating on the Heat Transfer in a Layered Cu-SiC-Cu Systems

Autorzy:

Strojny-Nędza, A.
Pietrzak, K.
Teodorczyk, M.
Basista, M.
Węglewski, W.
Chmielewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/350957.pdf

Data publikacji:

2017

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

copper matrix composites
silicon carbide
interface
thermal conductivity
modelling

Opis:

This paper describes the process of obtaining Cu-SiC-Cu systems by way of spark plasma sintering. A monocrystalline form of silicon carbide (6H-SiC type) was applied in the experiment. Additionally, silicon carbide samples were covered with a layer of tungsten and molybdenum using chemical vapour deposition (CVD) technique. Microstructural examinations and thermal properties measurements were performed. A special attention was put to the metal-ceramic interface. During annealing at a high temperature, copper reacts with silicon carbide. To prevent the decomposition of silicon carbide two types of coating (tungsten and molybdenum) were applied. The effect of covering SiC with the aforementioned elements on the composite’s thermal conductivity was analyzed. Results were compared with the numerical modelling of heat transfer in Cu-SiC-Cu systems. Certain possible reasons behind differences in measurements and modelling results were discussed.

Źródło:

Archives of Metallurgy and Materials; 2017, 62, 2B; 1311-1314
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 18.

Tytuł:

Investigations of Interface Properties in Copper-Silicon Carbide Composites

Autorzy:

Chmielewski, M.
Pietrzak, K.
Strojny-Nędza, A.
Jarząbek, D.
Nosewicz, S.

Powiązania:

https://bibliotekanauki.pl/articles/351487.pdf

Data publikacji:

2017

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

copper matrix composites
silicon carbide
interface
thermal conductivity
adhesion

Opis:

This paper analyses the technological aspects of the interface formation in the copper-silicon carbide composite and its effect on the material’s microstructure and properties. Cu-SiC composites with two different volume content of ceramic reinforcement were fabricated by hot pressing (HP) and spark plasma sintering (SPS) technique. In order to protect SiC surface from its decomposition, the powder was coated with a thin tungsten layer using plasma vapour deposition (PVD) method. Microstructural analyses provided by scanning electron microscopy revealed the significant differences at metal-ceramic interface. Adhesion force and fracture strength of the interface between SiC particles and copper matrix were measured. Thermal conductivity of composites was determined using laser flash method. The obtained results are discussed with reference to changes in the area of metal-ceramic boundary.

Źródło:

Archives of Metallurgy and Materials; 2017, 62, 2B; 1315-1318
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 19.

Tytuł:

Ceramic and Glass Fibre Reinforced Flexible Composites for Particulate Filter Walls – A Novel Approach
Opracowanie kompozytów giętkich wzmocnionych włóknami ceramicznymi i szklanymi do zastosowania w ścianach filtrów cząstek stałych

Autorzy:

Prabu, K.
Srinivasan, J.
Prakash, C.

Powiązania:

https://bibliotekanauki.pl/articles/233341.pdf

Data publikacji:

2019

Wydawca:

Sieć Badawcza Łukasiewicz - Instytut Biopolimerów i Włókien Chemicznych

Tematy:

PM
particulate matters
SiC
silicon carbide
cząstki stałe
kompozyty giętkie

Opis:

Flexible composites from high performance fibres were developed and targeted to replace the wall of existing rigid ceramic Particulate Filters. The composites are made from E Glass fibre webs of different density in the middle, with standard SiC Ceramic fibres webs in in the outer layers, forming a sandwich structure. Different needling densities were applied to form nonwoven composites, and they were stitched diagonally on the surface at specified intervals with continuous glass fibre filament yarn. In total, nine novel flexible composites were developed and evaluated for their structural, surface, mechanical and thermal properties. Based on the results and statistical analysis, the B2 sample is considered to be taken for further research to develop Particulate Matter (PM) filters.
W pracy opracowano giętkie kompozyty wzmocnione włóknami ceramicznymi i szklanymi do zastosowania w ścianach filtrów cząstek stałych. Kompozyty tworzące strukturę wielowarstwową zostały wykonane ze wstęg z włókna szklanego o różnej gęstości (warstwa wewnętrzna) i włókien ceramicznych (warstwa zewnętrzna). Zastosowano różne gęstości igłowania w celu utworzenia kompozytów włókninowych i zszyto je ukośnie na powierzchni w określonych odstępach za pomocą ciągłej przędzy z włókna szklanego. Opracowano dziewięć nowych giętkich kompozytów i oceniono ich właściwości: strukturalne, powierzchniowe, mechaniczne i termiczne. Na podstawie wyników i analizy statystycznej stwierdzono, że do dalszych badań w celu opracowania filtrów materii cząstek stałych (PM) należy wytypować próbkę B2.

Źródło:

Fibres & Textiles in Eastern Europe; 2019, 3 (135); 91-97
1230-3666
2300-7354

Pojawia się w:

Fibres & Textiles in Eastern Europe

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 20.

Tytuł:

Badanie właściwości elementów mocy z węglika krzemu w zastosowaniach układowych
Studies of silicon carbide power devices properties in application circuits

Autorzy:

Łykowski, A.
Szewczyk, A.

Powiązania:

https://bibliotekanauki.pl/articles/268568.pdf

Data publikacji:

2015

Wydawca:

Politechnika Gdańska. Wydział Elektrotechniki i Automatyki

Tematy:

przetwornica impulsowa
węglik krzemu
silicon carbide power devices
switching converter

Opis:

W artykule prezentowane są wyniki badania właściwości elementów SiC w zastosowaniach układowych. Do celów pomiarowych zaprojektowano układ przetwornicy realizujący konfigurację buck oraz boost z elementami aktywnymi z SiC oraz z krzemu, jako elementami referencyjnymi. Układ przetwornicy był badany dla różnych zestawów elementów, konfiguracji i parametrów pracy.
The paper presents results of study on Silicon Carbide power devices applications in circuits. For this purpose the model of switching converter was designed and fabricated. The model allows application of both, buck and boost architecture. As a reference elements, typical silicon power devices were used. For SiC and Si devices the efficiency and disturbance level was measured. For boost architecture the highest efficiency was noticed for SiC devices, while for bust architecture the efficiency for those devices was lower. For both cases generated disturbances were lowest while Silicon carbide devices were used.

Źródło:

Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej; 2015, 46; 73-76
1425-5766
2353-1290

Pojawia się w:

Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 21.

Tytuł:

Codeposition of SiC particles with electrolytic nickel
Współosadzanie cząstek SiC z niklem w procesie elektrolizy

Autorzy:

Dobosz, I.
Rudnik, E.
Burzyńska, L.

Powiązania:

https://bibliotekanauki.pl/articles/351442.pdf

Data publikacji:

2011

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

elektrochemia
kompozyt
nikiel
węglik krzemu
electrodeposition
composite
nickel
silicon carbide

Opis:

Ni/SiC composite coatings were produced by electrodeposition from chloride-sulphate bath. The effect of SiC concentration on the percentage of embedded particles at two current densities (0.75 and 1.50 Aźdm-2) was determined. SiC content in the nickel matrix was in the range of 13-23 vol%, but lower values were found for higher current density. Increased particles contents in the coatings practically did not change microhardness of deposits (approximately 300 HV), but it increased corrosion resistance. Morphology and particle distribution in the deposits was studied with optical and transmission electron microscopes. Specific surface charge of SiC particles as well as adsorption of Ni2+ions on the powder particles were also determined.
Powłoki kompozytowe Ni/SiC otrzymywano na drodze elektrolizy z zastosowaniem kąpieli chlorkowo-siarczanowej. Określono wpływ stężenia SiC na skład osadów katodowych uzyskiwanych przy dwóch gęstościach prądu (0.75 and 1.50 Aźdm-2). Udział SiC w osnowie niklowej wynosił 13-23 %obj., przy czym niższe zawartości stwierdzono w powłokach otrzymanych przy wyższej gęstości prądu. Wzrost zawartości fazy dyspersyjnej w osadach katodowych nie wpływa na mikrotwardość kompozytów (ok. 300 HV), następuje natomiast wzrost ich odporności korozyjnej. Morfologię powierzchni i rozkład cząstek dyspersyjnych w osnowie niklowej określano na podstawie obserwacji mikroskopowych. Wyznaczono ładunek powierzchniowy cząstek SiC oraz wielkość adsorpcji jonów Ni2+.

Źródło:

Archives of Metallurgy and Materials; 2011, 56, 3; 665-670
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 22.

Tytuł:

Corrosion and thermal shock resistance of metal (Cu, Al) matrix composites reinforced by SiC particles

Autorzy:

Strojny-Nędza, A.
Egizabal, P.
Pietrzak, K.
Zieliński, R.
Kaszyca, K.
Piątkowska, A.
Chmielewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/200646.pdf

Data publikacji:

2020

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

metal-matrix composites
silicon carbide
wear resistance
corrosion
thermal shocks

Opis:

This paper presents the results of studies concerning the production and characterization of Al-SiC/W and Cu-SiC/W composite materials with a 30% volume fraction of reinforcing phase particles as well as the influence of corrosion and thermal shocks on the properties of selected metal matrix composites. Spark plasma sintering method (SPS) was applied for the purpose of producing these materials. In order to avoid the decomposition of SiC surface, SiC powder was coated with a thin tungsten layer using plasma vapour deposition (PVD) method. The obtained results were analysed by the effect of the corrosion and thermal shocks on materials density, hardness, bending strength, tribological and thermal properties. Qualitative X-ray analysis and observation of microstructure of sample surfaces after corrosion tests and thermal shocks were also conducted. The use of PVD technique allows us to obtain an evenly distributed layer of titanium with a constant thickness of 1.5 µm. It was found that adverse environmental conditions and increased temperature result in a change in the material behaviour in wear tests.

Źródło:

Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 5; 1227-1236
0239-7528

Pojawia się w:

Bulletin of the Polish Academy of Sciences. Technical Sciences

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 23.

Tytuł:

Spark Plasma Sintering of Low Alloy Steel Modified with Silicon Carbide

Autorzy:

Hebda, M.
Dębecka, H.
Miernik, K.
Kazior, J.

Powiązania:

https://bibliotekanauki.pl/articles/352293.pdf

Data publikacji:

2016

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

SPS
silicon carbide
low-alloy steel
mechanical alloying
corrosion resistance

Opis:

The influence of adding different amounts of silicon carbide on the properties (density, transverse rupture strength, microhardness and corrosion resistance) and microstructure of low alloy steel was investigated. Samples were prepared by mechanical alloying (MA) process and sintered by spark plasma sintering (SPS) technique. After the SPS process, half of each of obtained samples was heat-treated in a vacuum furnace. The results show that the high-density materials have been achieved. Homogeneous and fine microstructure was obtained. The heat treatment that followed the SPS process resulted in an increase in the mechanical and plastic properties of samples with the addition 1wt. % of silicon carbide. The investigated compositions containing 1 wt.% of SiC had better corrosion resistance than samples with 3 wt.% of silicon carbide addition. Moreover, corrosion resistance of the samples with 1 wt.% of SiC can further be improved by applying heat treatment.

Źródło:

Archives of Metallurgy and Materials; 2016, 61, 2A; 503-508
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 24.

Tytuł:

Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Autorzy:

Bisewski, D.
Myśliwiec, M.
Górecki, K.
Kisiel, R.
Zarębski, J.

Powiązania:

https://bibliotekanauki.pl/articles/220523.pdf

Data publikacji:

2016

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

Schottky diodes
transient thermal impedance
thermal measurements
silicon carbide
packaging

Opis:

This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

Źródło:

Metrology and Measurement Systems; 2016, 23, 3; 451-459
0860-8229

Pojawia się w:

Metrology and Measurement Systems

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 25.

Tytuł:

Zwiększenie częstotliwości łączeń w falownikach dzięki nowym elementom półprzewodnikowym z węglika krzemu (SiC)

Autorzy:

Zdanowski, M.
Sobieski, R.

Powiązania:

https://bibliotekanauki.pl/articles/302847.pdf

Data publikacji:

2017

Wydawca:

Wydawnictwo Druk-Art

Tematy:

falownik
element półprzewodnikowy
węglik krzemu
inverter
semiconductor element
silicon carbide

Opis:

Doskonałe właściwości statyczne i dynamiczne tranzystorów SiC MOSFET mogą być wykorzystane do przesunięcia obecnej bariery częstotliwości łączeń, występującej w dotychczas stosowanych krzemowych (Si) elementach półprzewodnikowych falowników napięcia w zakres nawet powyżej 100 kHz.

Źródło:

Napędy i Sterowanie; 2017, 19, 3; 22-24
1507-7764

Pojawia się w:

Napędy i Sterowanie

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 26.

Tytuł:

Próby granulowania odpadów pyłu węglika krzemu do wykorzystania w hutnictwie
Granulation trials of waste the dust silicon carbide for utilization in metallurgy

Autorzy:

Borowski, G.

Powiązania:

https://bibliotekanauki.pl/articles/401657.pdf

Data publikacji:

2016

Wydawca:

Polskie Towarzystwo Inżynierii Ekologicznej

Tematy:

węglik krzemu
granulowanie
sezonowanie
hutnictwo
silicon carbide
granulation
seasoning
metallurgy

Opis:

W artykule przedstawiono wyniki prób laboratoryjnych granulowania pyłu węglika krzemu oraz rezultaty badań nad doborem spoiwa oraz określeniem właściwości uzyskanych granulatów. Materiałem badawczym był odpadowy pył węglika krzemu o bardzo dużym rozdrobnieniu, który mieszano z cementem lub organicznym modyfikowanym preparatem skrobiowym. Wykonano sześć prób granulowania w granulatorze talerzowym o średnicy 100 cm. W każdej serii badawczej określono: rodzaj i udział spoiwa, średnicę granul, kruchość, rodzaj struktury oraz właściwości wytrzymałościowe. Dobre granulaty z węglika krzemu uzyskano z dodatkiem spoiwa cementowego o udziale masowym 4% oraz po co najmniej 24 godzinach sezonowania. Spoiwo należało dodawać dwukrotnie metodą pudrowania, najpierw w trakcie mieszania w granulatorze oraz ponownie po zakończeniu wytwarzania. Stwierdzono, że uzyskany granulat może być wykorzystany jako zamiennik żelazokrzemu w procesach wytapiania stali.
The article presents the results of laboratory granulation tests of dust silicon carbide and the results of research on the selection of the binder and the properties of the granules obtained. The research material was a waste of the silicon carbide powder with a high fragmentation, mixed with a cement or an organic modified starch specimen. Six tests were performed in a disc granulator with 100 cm in diameter. In each series of trial specified: the type and share of the binder, the diameter of the granules, tenderness, type of structure and mechanical properties. Good granules of silicon carbide obtained with the addition of cement binder with 4% of the mass fraction and at least 24 hours of seasoning. The binder should be added twice by powdering, first in a stirred granulator, and again after manufacture. It was found that the resulting granules may be used as a replacement of ferrosilicon in the process of steelmaking.

Źródło:

Inżynieria Ekologiczna; 2016, 49; 112-116
2081-139X
2392-0629

Pojawia się w:

Inżynieria Ekologiczna

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 27.

Tytuł:

The capabilities of electrodischarge microdrilling of high aspect ratio holes in ceramic materials

Autorzy:

Skoczypiec, S.
Machno, M
Bizoń, W.

Powiązania:

https://bibliotekanauki.pl/articles/407299.pdf

Data publikacji:

2015

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

microdrilling
electrodischarge machining (WEDM)
ceramic materials
siliconized silicon carbide
SiSiC

Opis:

In the first part of the article the review of ceramic materials drilling possibilities was presented. Among the described methods special attention is paid to electrodischarge drilling. This process have especially been predicted for machining difficult-to-cut electrically conductive materials. The second part consist of the results analysis of electrodischarge microdrilling of siliconized silicon carbide. The experiment involves the impact of current amplitude, discharge voltage and pulse time on the hole depth, side gap, linear tool wear and mean drilling speed. The results shows that electrodischarge drilling is a good alternative when machining inhomogeneous ceramic materials and gives possibility to drill high aspect ratio holes with relatively high efficiency (the drilling speed >2 mm/min).

Źródło:

Management and Production Engineering Review; 2015, 6, 3; 61-69
2080-8208
2082-1344

Pojawia się w:

Management and Production Engineering Review

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 28.

Tytuł:

Densification and Mechanical Properties of 439L Steel Composites Blended with Fifteen Micron-Size Silicon Carbide Particles

Autorzy:

Lee, Sang Woo
Shin, Hyunho
Rhee, Kyong-Yop

Powiązania:

https://bibliotekanauki.pl/articles/351985.pdf

Data publikacji:

2019

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

439L steel
silicon carbide
composites
densification
liquid phase sintering

Opis:

439L stainless steel composites blended with fifteen micron SiC particles were prepared by uniaxial pressing of raw powders at 100 MPa and conventional sintering at 1350°C for 2 h. Based on the results of X-ray diffraction analysis, dissolution of SiC particles were apparent. The 5 vol% SiC specimen demonstrated maximal densification (91.5%) among prepared specimens (0-10 vol% SiC); the relative density was higher than the specimens in the literature (80-84%) prepared by a similar process but at a higher forming pressure (700 MPa). The stress-strain curve and yield strength were also maximal at the 5 vol% of SiC, indicating that densification is the most important parameter determining the mechanical property. The added SiC particles in this study did not serve as the reinforcement phase for the 439L steel matrix but as a liquid-phase-sintering agent for facilitating densification, which eventually improved the mechanical property of the sintered product.

Źródło:

Archives of Metallurgy and Materials; 2019, 64, 3; 883-888
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 29.

Tytuł:

Various Aspects of Application of Silicon Carbide in the Process of Cast Iron Melting

Autorzy:

Janerka, Krzysztof
Kostrzewski, Łukasz
Stawarz, Marcin
Jezierski, Jan
Szajnar, Jan

Powiązania:

https://bibliotekanauki.pl/articles/2134113.pdf

Data publikacji:

2022

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

cast iron
ductile iron
silicon carbide
SiC
cast iron melting

Opis:

The article discusses benefits associated with the use of silicon carbide in the process of melting gray cast iron and ductile cast iron in induction electric furnaces. It presents the analysis of the impact of various charge materials and the addition of a variable amount of SiC and FeSi to the fixed charge when melting cast iron of grades GJS 400-15 and GJS 500-7 on mechanical properties and microstructure. Moreover, the article includes an analysis of the efficiency of carburization and the increase in the content of silicon during the application of SiC. The article also presents the results of the study of primary modification using silicon carbide at the minimum temperature of Temin eutectic and Tsol solidus. Based on analysis of the literature, conducted research, and calculations, it was found that the addition of silicon carbide has a beneficial impact on the properties of melted cast iron. The addition of SiC in the charge increases the content of C and Si without increasing the amount of contaminations. The addition of SiC at reduced pig iron presence in the charge decreases production costs, while the use of SiC as an inoculant increases both Temin and Tsol, which is beneficial from the point of view of cast iron nucleation.

Źródło:

Archives of Metallurgy and Materials; 2022, 67, 3; 1093--1098
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 30.

Tytuł:

Silicon Carbide Fabrication by Infiltration of Molten Fe-Si Alloy Through Two-Step Reaction Sintering

Autorzy:

Hanada, Yoshitsugu
Xiao, Yang
Sonoda, Akio
Kang, Hyo-Gyoung
Nagayoshi, Hideaki
Yamamoto, Atsuo
Tokunaga, Tatsuya

Powiązania:

https://bibliotekanauki.pl/articles/355100.pdf

Data publikacji:

2019

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

electrical resistivity
fracture toughness
iron silicide
molten metal infiltration
silicon carbide

Opis:

Wider application of silicon carbide (SiC) is anticipated for increasing the durability of various structural facilities. For this study, SiC was fabricated with decreased electrical resistivity for precision electrical discharge machining. Two-step reaction sintering by infiltration of molten Fe-Si alloy was applied for SiC fabrication. The procedure included first sintering at 973 K in Ar gas atmosphere and second sintering by spontaneous infiltration of molten Fe-75%Si alloy at 1693 K in vacuum. The sintered structure porosity became very low, forming 3C-type SiC. Results confirmed that molten Fe-75%Si alloy infiltration occurred because of reaction sintering. The electrical resistivity of the sintered SiC infiltrated by molten Fe-75%Si alloy can be improved to be two orders of magnitude lower than that by molten Si, consequently maintaining the high performance of SiC.

Źródło:

Archives of Metallurgy and Materials; 2019, 64, 4; 1645-1652
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 31.

Tytuł:

Experimental investigation to study the viscosity and dispersion of conductive and non-conductive nanopowders’ blended dielectrics

Autorzy:

Santarao, K.
Prasad, C. L. V. R. S. V.
Swami Naidu, G.

Powiązania:

https://bibliotekanauki.pl/articles/102844.pdf

Data publikacji:

2017

Wydawca:

Stowarzyszenie Inżynierów i Techników Mechaników Polskich

Tematy:

nanofluid
viscosity
dispersion
sonication
silicon carbide nano powder
boric acid nano powder

Opis:

Nano fluids are nanotechnology-based colloidal dispersions engineered by stably suspending nanoparticles. The characteristics of nano fluids such as thermal and electrical conductivities, viscosity, specific heat, dispersion etc. were studied and analyzed by earlier researches at different particle concentrations with different nano fluids. It was established that nano fluids have a significant impact on the process due the improvised characteristics. Nano fluid viscosity and dispersion deserve the same attention as thermal conductivity in cases of nano dielectric fluids that are used in EDM as they influence the MRR. In this work, The viscosity and dispersion of the conductive and nonconductive Nano powders blended dielectrics are investigated as a function of volume fraction so as to evaluate the behavior of these nano fluids at different particle volume concentrations. Kerosene and deionized water based nano fluids blended with conductive (SiC) and non-conductive (boric acid) Nano particles are selected for the current study. It is observed that as the percentage volume fraction of nano particles (both SiC and boric acid) increased, the viscosity was found increasing when blended with DI water. But the viscosity behavior with kerosene blended with SiC and boric acid is not same. The existing experimental results about the nano fluids viscosity shows clearly that viscosity have a specific trend in variation with an increase of volume concentration. Boric acid blended with DIW and kerosene shows similar trend in dispersion. However, in case of SiC blended with DIW and kerosene showed some contradictory results giving scope for further investigation. The outcome of these experimental investigations will augment the works that are going on in studying its influence on MRR in EDM processes using nano blended dielectric medium.

Źródło:

Advances in Science and Technology. Research Journal; 2017, 11, 1; 154-160
2299-8624

Pojawia się w:

Advances in Science and Technology. Research Journal

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 32.

Tytuł:

SiC technology enters the market

Autorzy:

Kozłowska, Małgorzata

Powiązania:

https://bibliotekanauki.pl/articles/254085.pdf

Data publikacji:

2018

Wydawca:

Instytut Naukowo-Wydawniczy TTS

Tematy:

SiC technology
silicon carbide
railway track
technologia SiC
węglik krzemu
tory kolejowe

Opis:

Silicon carbide is one of the most promising technologies in the area of high-power power electronics devices, expected to provide new impetus for the development of modern rolling stock and electric buses. The technological revolution forecast for several years is now becoming reality – MEDCOM has introduced SiC products into series production and the first vehicles equipped with converters based on silicon carbide have already rolled onto the tracks.

Źródło:

TTS Technika Transportu Szynowego; 2018, 9EN; 20-21
1232-3829
2543-5728

Pojawia się w:

TTS Technika Transportu Szynowego

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 33.

Tytuł:

Application of Silicon Carbide Chills in Controlling the Solidification Process of Casts Made of IN-713C Nickel Superalloy

Autorzy:

Szeliga, D.
Kubiak, K.
Cygan, R.
Ziaja, W.

Powiązania:

https://bibliotekanauki.pl/articles/379538.pdf

Data publikacji:

2012

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

silicon carbide
precision casting
porosity
nickel superalloy
węglik krzemu
odlewanie precyzyjne
porowatość

Opis:

The paper presents the method of manufacturing casts made of the IN-713C nickel superalloy using the wax lost investment casting process and silicon carbide chills. The authors designed experimental casts, the gating system and selected the chills material. Wax pattern, ceramic shell mould and experimental casts were prepared for the purposes of research. On the basis of the temperature distribution measurements, the kinetics of the solidification process was determined in the thickened part of the plate cast. This allowed to establish the quantity of phase transitions which occurred during cast cooling process and the approximate values of liquidus, eutectic, solidus and solvus temperatures as well as the solidification time and the average value of cast cooling rate. Non-destructive testing and macroscopic analysis were applied to determine the location and size of shrinkage defects. The authors present the mechanism of solidification and formation of shrinkage defects in casts with and without chills. It was found that the applied chills influence significantly the hot spots and the remaining part of the cast. Their presence allows to create conditions for solidification of IN-713C nickel superalloy cast without shrinkage defects.

Źródło:

Archives of Foundry Engineering; 2012, 12, 2s; 105-111
1897-3310
2299-2944

Pojawia się w:

Archives of Foundry Engineering

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 34.

Tytuł:

Wpływ wybranych parametrów ablacji laserowej na wydajność obróbki oraz chropowatość powierzchni spiekanego węglika krzemu
The effect of selected laser ablation parameters on machining capacity and surface roughness of sintered silicon carbide

Autorzy:

Norymberczyk, Ł.

Powiązania:

https://bibliotekanauki.pl/articles/269802.pdf

Data publikacji:

2017

Wydawca:

Wrocławska Rada Federacji Stowarzyszeń Naukowo-Technicznych

Tematy:

ablacja laserowa
mikroobróbka laserowa
węglik krzemu
laser ablation
laser micromachining
silicon carbide

Opis:

W pracy przedstawiono badania wpływu mocy, czasu trwania oraz częstotliwości impulsów lasera ablacyjnego na wydajność obróbki i chropowatość powierzchni spiekanego węglika krzemu. Wydajność obróbki odniesiono do jednego cyklu obróbkowego, zaś do oceny chropowatości przyjęto średnią arytmetyczną rzędnych profilu Ra oraz największą wysokość profilu chropowatości Rz. Stosując plan Hartleya wyznaczono funkcje obiektu badań. Stwierdzono, że największy wpływ na przyjęte kryteria oceny ma czas trwania impulsu lasera, natomiast mniejszy jest wpływ mocy oraz częstotliwości impulsów lasera.
The paper presents the study of influence of power, pulse width and frequency of laser ablation process on the machining efficiency and surface roughness of sintered silicon carbide surface. The machining efficiency was referred to one machining cycle and the arithmetic mean of the ordinates Ra and the highest roughness profile Rz were used to evaluate the roughness. Using Hartley's plan, the mathematical approximation of the model was investigated. It has been found that the maximum influence on considered parameters has the width of the laser pulse.

Źródło:

Inżynieria Maszyn; 2017, R. 22, z. 1; 65-75
1426-708X

Pojawia się w:

Inżynieria Maszyn

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 35.

Tytuł:

Evaluating the Durability of SiC-Coated Carbon Composites Under Thermal Shock Conditions

Autorzy:

Lee, Ji Eun
Bae, Soo Bin
Cho, Nam Choon
Lee, Hyung Ik
Meng, Zicheng
Lee, Kee Sung

Powiązania:

https://bibliotekanauki.pl/articles/2049309.pdf

Data publikacji:

2021

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

durability
carbon composites
silicon carbide coating
chemical vapor deposition
chemical vapor reaction

Opis:

Oxidation and indentation properties of silicon carbide-coated carbon composites were investigated to analyze its durability under atmospheric thermal shock conditions. The silicon carbide-coated samples were prepared either with chemical vapor deposition or chemical vapor reaction/chemical vapor deposition hybrid coating. The remnant weight of uncoated and coated samples was investigated after each thermal shock cycle. The surface and cross-section of coated samples were then analyzed to confirm morphological changes of the coating layers. The spherical indentation test for uncoated and coated samples were also performed. As a result, silicon carbide coating improved the oxidation resistance, elastic modulus, and hardness of carbon composites. Hybrid coating drastically enhanced the durability of samples at high temperature in atmospheric conditions.

Źródło:

Archives of Metallurgy and Materials; 2021, 66, 3; 777-782
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 36.

Tytuł:

Research into properties of power electronics devices made of silicon carbide sic, in conditions of commutating current with high frequency
Badania właściwości przyrządów energoelektronicznych wykonanych na bazie węglika krzemu w warunkach komutacji prądu z wysoką częstotliwością

Autorzy:

Michalski, A.
Zymmer, K.

Powiązania:

https://bibliotekanauki.pl/articles/158856.pdf

Data publikacji:

2011

Wydawca:

Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki

Tematy:

przyrząd półprzewodnikowy
węglik krzemu
wielka częstotliwość
semiconductor devices
silicon carbide
high frequency convertes

Opis:

The paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the SiC Schottky diodes at a current variation slope in a device, of 500 A/ s. These data were compared with the corresponding parameters determined for ultrafast silicon diodes. Results of tests of power losses in diodes made of silicon carbide, at a current commutation frequency of (10 200) kHz are presented, comparing them with corresponding data determined for ultrafast silicon diodes. Test results of power losses in transistors constituting elements of d.c. voltage controllers are also shown. Investigations were conducted with an ultrafast SiC diode and with an ultrafast silicon diode at the transistor switching frequency of 100 kHz.
W artykule przedstawiono wyniki pomiarów przejściowego prądu wstecznego oraz dynamicznego napięcia przewodzenia diod Schottky`ego wykonanych na bazie węglika krzemu - SiC. Pomiary przeprowadzono przy stromości zmian prądu wynoszącej 500 A/žs. Wyniki te porównano z odpowiednimi rezultatami uzyskanymi dla ultraszybkiej diody krzemowej o takich samych parametrach napięciowo-prądowych. Przedstawiono także wyniki pomiarów strat mocy generowanych w tych diodach w warunkach komutacji prądu z częstotliwością zmienianą w granicach (10 ÷ 200) kHz. Artykuł zawiera również wyniki badań strat mocy wydzielanych w tranzystorze kluczującym z częstotliwością 100 kHz. Wyniki te dotyczą przypadków współpracy tranzystora w procesie komutacji prądu z ultraszybką diodą krzemową oraz z diodą SiC.

Źródło:

Prace Instytutu Elektrotechniki; 2011, 253; 61-71
0032-6216

Pojawia się w:

Prace Instytutu Elektrotechniki

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 37.

Tytuł:

Towards a viable method of reusing silicon carbide. Physicochemical analyses in the studies on the industrial application of the material

Autorzy:

Niemczyk-Wojdyla, Anna
Fornalczyk, Agnieszka
Willner, Joanna
Zawisz, Rafał

Powiązania:

https://bibliotekanauki.pl/articles/2032847.pdf

Data publikacji:

2021

Wydawca:

Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej

Tematy:

silicon carbide
X-ray spectroscopy
Acheson process
węglik krzemu
spektroskopia rentgenowska
proces Achesona

Opis:

The paper presents an investigation on the feasibility of recovery of the highly valuable silicon carbide (SiC) from the slurry waste generated from silicon wafer production in the photovoltaic and semiconductor industry. Compared to the other techniques of recycling, a facile and low-cost method of waste treatment via heat drying followed by low-energy mixing in a shaker mixer was proposed. As the result of the treatment, the slurry waste was converted into a powdered form with dominant content of SiC. Separated SiC material was characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, and sieve analysis. In addition, analyses of the bulk density, moisture content and melting test were carried out. As was confirmed by the physicochemical analyses, the dominant sieve fraction was in the range of 0.1-0.06 mm, the purity level was a minimum 99% mass of SiC, the moisture content - 0.3%, the bulk density - 1.3 g/cm3. The physicochemical characteristics of the material were crucial for understanding the material performance, assessment of the material quality and determining the perspective directions of the industrial application. The studies revealed that the material exhibited a high application potential as abrasive, especially in abrasive grinding and waterjet cutting.

Źródło:

Environment Protection Engineering; 2021, 47, 4; 43-52
0324-8828

Pojawia się w:

Environment Protection Engineering

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 38.

Tytuł:

The Effect of Power Ultrasound on Microstructure Evolution During the Transient Liquid Stage of Ultrasonic-Promoted TLP Bonding SiCp/Al MMCs

Autorzy:

Zhou, Changzhuang
Ma, Lin
Zhu, Chao
Cui, Qinghe
Liang, Jindi
Song, Yujian

Powiązania:

https://bibliotekanauki.pl/articles/2174569.pdf

Data publikacji:

2022

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

transient liquid phase bonding
silicon carbide reinforced aluminum matrix composites
ultrasonics
zinc interlayer

Opis:

Ultrasound-promoted transient liquid phase bonding (U-TLP) is a high quality, high efficiency, and low-cost method for fast bonding of difficult-wetting materials in the atmospheric environment. In this paper, U-TLP was used to bond SiC particles reinforced aluminium-based metal matrix composite which particle volume fraction was 70%. The pure zinc foil was used as the intermediate layer. The effects of ultrasonic on microstructure evolution and mechanical properties of joints during the transient liquefaction stage were investigated. The mechanism of ultrasonic effects in the transient liquefaction stage of U-TLP was also inducted. The results showed that high volume fraction SiCp/Al MMCs were bonded well at low temperature in the air environment. Ultrasonic vibration can remove the oxide film on the surface of aluminum matrix composites, enhance the wettability of SiC particles with weld metal, promote atomic diffusion and homogenization of SiC particles, and improve the welding quality and efficiency. Reasonable increase of ultrasonic vibration time could effectively improve the joint strength.

Źródło:

Archives of Metallurgy and Materials; 2022, 67, 4; 1283--1291
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 39.

Tytuł:

Fatigue Properties of Nodular Cast Iron at Low Frequency Cyclic Loading

Autorzy:

Vaško, A.

Powiązania:

https://bibliotekanauki.pl/articles/353103.pdf

Data publikacji:

2017

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

fatigue test
low frequency cyclic loading
nodular cast iron
steel scrap
silicon carbide

Opis:

Three melts of ferrite-pearlitic nodular cast iron with different charge composition were used for fatigue tests. Wöhler fatigue curves and fatigue strength were obtained, and microstructure and fracture surfaces were investigated. The aim of the paper is to determine the influence of charge composition on microstructure, mechanical and fatigue properties of synthetic nodular cast irons and their micromechanisms of failure. Fatigue tests were realised at low frequency sinusoidal cyclic push-pull loading (stress ratio R = −1) at ambient temperature (T = 20 ±5°C). They were carried out with using the fatigue experimental machine Zwick/Roell Amsler 150HFP 5100 at frequency f ≈ 120 Hz. The results of fatigue tests at low frequency cyclic loading are compared with fatigue properties at high frequency cyclic loadin.

Źródło:

Archives of Metallurgy and Materials; 2017, 62, 4; 2205-2210
1733-3490

Pojawia się w:

Archives of Metallurgy and Materials

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 40.

Tytuł:

Edge termination design for 1.7 kV silicon carbide p-i-n diodes

Autorzy:

Taube, A.
Sochacki, M.

Powiązania:

https://bibliotekanauki.pl/articles/199922.pdf

Data publikacji:

2020

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

edge termination
silicon carbide
4H-SiC
p-i-n diode
breakdown voltage
JTE

Opis:

In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7 kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of the areas of the double-zone JTE (space-modulated JTE). The influence of geometry and the level of p-type doping in the JTE area as well as the charge as the interface between the p-type JTE area and the passivation layer on the diode breakdown voltage was studied. The effect of statistical dispersion of drift layer parameters (thickness, doping level) on diodes breakdown voltage with various JTE structures was investigated as well. The obtained results showed that the breakdown volatge values for a diode with single zone JTE are very sensitive both to the dose of JTE area and charge accumulated at the JTE/dielectric interface. The use of a double zone or space-modulated JTE structures allows for obtaining breakdown voltage above 1.7 kV for a much wider range of doping parameters and with better tolerance to positive charge at the JTE/dielectric interface, as well as better tolerance to statistical dispersion of active layer parameters compared to a single zone JTE structure.

Źródło:

Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 2; 367-375
0239-7528

Pojawia się w:

Bulletin of the Polish Academy of Sciences. Technical Sciences

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 41.

Tytuł:

Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys

Autorzy:

Stęszewski, J.
Jakubowski, A.
Korwin-Pawlowski, M. L.

Powiązania:

https://bibliotekanauki.pl/articles/308627.pdf

Data publikacji:

2007

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy

Tematy:

silicon carbide
SiC MOSFET
4H-SiC
6H-SiC
Crosslight Apsys
Silvaco Atlas

Opis:

A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.

Źródło:

Journal of Telecommunications and Information Technology; 2007, 3; 93-95
1509-4553
1899-8852

Pojawia się w:

Journal of Telecommunications and Information Technology

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 42.

Tytuł:

Influence of load and reinforcement content on selected tribological properties of Al/SiC/Gr hybrid composites

Autorzy:

Veličković, S.
Miladinović, S.
Stojanović, B.
Nikolić, R. R.
Hadzima, B.
Arsić, D.

Powiązania:

https://bibliotekanauki.pl/articles/111714.pdf

Data publikacji:

2018

Wydawca:

Stowarzyszenie Menedżerów Jakości i Produkcji

Tematy:

aluminum alloy
hybrid composites
silicon carbide
graphite
particles
stop aluminium
węglik krzemu
grafit
kompozyty hybrydowe

Opis:

Hybrid materials with the metal matrix are important engineering materials due to their outstanding mechanical and tribological properties. Here are presented selected tribological properties of the hybrid composites with the matrix made of aluminum alloy and reinforced by the silicon carbide and graphite particles. The tribological characteristics of such materials are superior to characteristics of the matrix – the aluminum alloy, as well as to characteristics of the classical metal-matrix composites with a single reinforcing material. Those characteristics depend on the volume fractions of the reinforcing components, sizes of the reinforcing particles, as well as on the fabrication process of the hybrid composites. The considered tribological characteristics are the friction coefficient and the wear rate as functions of the load levels and the volume fractions of the graphite and the SiC particles. The wear rate increases with increase of the load and the Gr particles content and with reduction of the SiC particles content. The friction coefficient increases with the load, as well as with the SiC particles content increase.

Źródło:

Production Engineering Archives; 2018, 18; 18-23
2353-5156
2353-7779

Pojawia się w:

Production Engineering Archives

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 43.

Tytuł:

Effect of Volume Percentage of Reinforcement on the Microstructure and Mechanical Properties of an Al6061-T6/SiC Surface Composite Fabricated Through Friction Stir Processing

Autorzy:

Ansari, Abdul Jabbar
Anas, Mohd

Powiązania:

https://bibliotekanauki.pl/articles/2201914.pdf

Data publikacji:

2023

Wydawca:

Stowarzyszenie Inżynierów i Techników Mechaników Polskich

Tematy:

friction stir processing
AMMCs
aluminium metal matrix composite
silicon carbide
microstructure
surface composites
composite material

Opis:

In this research, aluminium metal matrix composites (AMMCs) have been manufactured through friction stir processing (FSP) by reinforcing nano-sized SiC particles in an Al6061-T6 alloy. The consequences of the volume percentage of reinforced SiC particles on mechanical properties and microstructural features were analyzed for the developed AMMCs. Microstructural evaluation of a cross-section of a friction stir processed (FSPed) sample has been conducted through Electron backscatter diffraction (EBSD) Energy dispersive spectroscopy (EDS) and a scanning electron microscope (SEM) technique. Microhardness tests were conducted athwart the cross section of FSPed specimen to obtain microhardness feature. A tensile test of FSPed samples has been conducted on a universal testing machine (UTM). Homogeneous distributions of SiC particles were found in the stir zone without any consolidation of particles. The size of the reinforcement particles was decreased slightly by increasing the volume fraction. It has been found that increasing the volume fraction of SiC particles, enhance the tensile strength and microhardness, but decreases the ductility of the aluminium. The maximum ultimate tensile strength (UTS) and microhardness were obtained as 390 MPa and 150.71 HV, respectively, at 12% volume percentage of reinforcement particles. UTS and microhardness of the FSPed Al/SiC have been improved by 38.29% and 59.48% respectively as compared to Al6061-T6. The brittle nature of the FSPed Al/SiC has increased due to a rise in the volume fraction of nanosized SiC particles, which causes a decrease in ductility.

Źródło:

Advances in Science and Technology. Research Journal; 2023, 17, 2; 247--257
2299-8624

Pojawia się w:

Advances in Science and Technology. Research Journal

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 44.

Tytuł:

Przemiana lepkosprężysta i właściwości napełnionych kompozytów epoksydowych odpornych na ścieranie
Viscoelastic transition and properties of the filled wear-resistant epoxy composites

Autorzy:

Prokopchuk, N. R.
Dolinskaya, R. M.
Poloz, A. Y.
Ebich, Y. R.

Powiązania:

https://bibliotekanauki.pl/articles/272654.pdf

Data publikacji:

2018

Wydawca:

Sieć Badawcza Łukasiewicz - Instytut Inżynierii Materiałów Polimerowych i Barwników

Tematy:

żywice epoksydowe
utwardzacze poliamidowe
węglik krzemu
właściwości lepkosprężyste
epoxy
polyamine hardener
silicon carbide
viscoelastic properties

Opis:

Badano właściwości lepkosprężyste napełnionych kompozytów epoksydowych na bazie żywicy dian ED-20, w temperaturze 60–140°C, w zależności od zawartości napełniacza, węglika krzemu. Przedstawiono różnice we właściwościach kompozytów w zależności od zmiany stosunku energii odkształcenia sprężystego i plastycznego. Te energie odkształcenia kompozytów są z kolei określane przez morfologię wzmacniającego napełniacza o małej plastyczności.
Viscoelastic properties of the filled epoxy composites on the basis of diane resin ED-20 are studied at 60–140°C depending on concentration of a filler, silicon carbide. Different properties of composites caused by change of an energy ratio of elastic and viscous deformation are shown. These energies of deformation of composites, in turn, are defined by morphology of the strengtheninged low-ductile filler.

Źródło:

Elastomery; 2018, 22, 2; 136-142
1427-3519

Pojawia się w:

Elastomery

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 45.

Tytuł:

Homogenizacja emulsji o/w podczas przepływu przez złoże mikrocząstek węglika krzemu
Homogenization of o/w emulsion during the flow through a packed bed of Silicon carbide microparticles

Autorzy:

Różański, J.
Kuczora, A.

Powiązania:

https://bibliotekanauki.pl/articles/2073346.pdf

Data publikacji:

2018

Wydawca:

Stowarzyszenie Inżynierów i Techników Mechaników Polskich

Tematy:

emulsja
rozpad kropel
złoże
homogenizacja
węglik krzemu
emulsion
drop break-up
packed bed
homogenization
Silicon carbide

Opis:

Przedstawiono wyniki badań przepływu rozcieńczonych emulsji olej-woda przez złoże mikrocząstek węglika krzemu (71÷100 µm). Olej mineralny był fazą rozproszoną (5 i 15% obj.), a Tween 40 wykorzystano jako emulgator. Przetłoczone przez złoże emulsje zawierały mniejsze krople oleju i były bardziej jednorodne od emulsji wstępnej. Użyte złoże przede wszystkim spowodowało zanik kropel o średnicy większej od 30 µm. Zaobserwowano również silny wpływ stężenia emulsji na spadek ciśnienia.
The results of study on the flow of diluted o/w emulsions through packed beds of Silicon carbide microparticles (71÷100 µm) are reported. The mineral oil as dispersed phase (5 vol% and 15 vol%) and Tween 40 as emulsifier were used. The emulsions pressed through the packed bed contained smaller oil droplets and were more uniform than the preliminary emulsion. The packed bed used in the study caused mainly the disappearance of droplets with diameters greater than 30 µm. A strong effect of emulsion concentration on pressure drop was also observed.

Źródło:

Inżynieria i Aparatura Chemiczna; 2018, 4; 116--117
0368-0827

Pojawia się w:

Inżynieria i Aparatura Chemiczna

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 46.

Tytuł:

Wpływ technologii na wybrane właściwości ceramiki z węglika krzemu (SiC)
Influence of technology on selected qualities of silicone carbide ceramic (SiC)

Autorzy:

Perkowski, K.
Osuchowski, M.
Witosławska, I.
Konopka, G.
Marciniak-Maliszewska, B.
Witek, A.

Powiązania:

https://bibliotekanauki.pl/articles/392075.pdf

Data publikacji:

2011

Wydawca:

Sieć Badawcza Łukasiewicz - Instytut Ceramiki i Materiałów Budowlanych

Tematy:

ceramika techniczna
węglik krzemu
technika zagęszczania
właściwości mechaniczne
technical ceramics
silicon carbide
consolidation method
mechanical characteristics

Opis:

Przedstawiono wstępne prace dotyczące określenia wpływu procesów jednostkowych na wybrane właściwości ceramiki z węglika krzemu (SiC), otrzymanej z wykorzystaniem różnych technik zagęszczania. Uzyskano następujące serie próbek SiC: prasowane jednoosiowo dwustronnie oraz spiekane; prasowane jednoosiowo dwustronnie i dodatkowo zagęszczane izostatycznie na zimno (Cool Isostatic Press), a następnie spiekane swobodnie; prasowane jednoosiowo dwustronnie oraz spiekane, a następnie prasowane izostatycznie na gorąco (Hot Isostatic Press). W wyniku przeprowadzonych badań została określona wytrzymałość na zginanie kształtek SiC, poddanych różnym procesom zagęszczania. Dodatkowe zagęszczanie izostatyczne spowodowało znaczny wzrost wytrzymałości mechanicznej spiekanych próbek SiC oraz zmniejszenie wielkości krystalitów niektórych faz badanego materiału.
We present introduction works which main goal is determination of influence unitary processes on selected properties silicon carbide (SiC) ceramics, that were obtained using different techniques of compaction. We obtained following series of silicon carbide samples (SiC): pressed uniaxial bilateral and next sintering, the second series - pressed uniaxial bilateral and additionally pressed cool isostatic press before sintering, the last series - pressed uniaxial bilateral, sintering and pressing isostatic in high temperature (Hot Isostatic Press). As a result of the study was determined the flexural strenght of samples obtained differences ways. Additional isostatic press process caused rise of flexural strenght of sintering samples SiC and reduction crystallite sizes for some phases of the test material.

Źródło:

Prace Instytutu Ceramiki i Materiałów Budowlanych; 2011, R. 4, nr 7, 7; 22-36
1899-3230

Pojawia się w:

Prace Instytutu Ceramiki i Materiałów Budowlanych

Dostawca treści:

Biblioteka Nauki

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Tytuł:

Wielowarstwowe wkłady ceramiczne w konstrukcji pancerzy kompozytowych
Multi-Layered Ceramic Inserts in Composite Armour Design

Autorzy:

Zbies, Piotr
Liguz, Piotr
Zgliński, Piotr
Lipiński, Tomasz
Nowacki, Krzysztof

Powiązania:

https://bibliotekanauki.pl/chapters/28328122.pdf

Data publikacji:

2023-12-14

Wydawca:

Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej

Tematy:

azotek krzemu
ochrona balistyczna
pancerz ceramiczny
tlenek glinu
węglik boru
węglik krzemu
alumina
ballistic protection
boron carbide
ceramic armor
silicon carbide
silicon nitride

Opis:

Częstym efektem prac nad antybalistycznymi osłonami kompozytowymi są rozwiązania wielowarstwowe. Problemem samodzielnych prac badawczych w tym kierunku jest ograniczona liczba publikacji zajmujących się tematem osłon ceramicznych, które składają się z więcej niż trzech warstw. Uzupełnieniem luk literaturowych, jako kontynuacja projektu EGIDA AGH, będą prace prowadzone przez Koło Naukowe Konstrukcji Militarnych „Adamantium” w ramach projektu EGIDA AGH 2.0. Zakres badań będzie obejmował konstrukcje i właściwości aplikacyjne nowych, wielowarstwowych układów pancerzy oraz ich wpływ na obniżenie masy powierzchniowej docelowych paneli osłonowych pojazdów pancernych. Niniejszy rozdział jest wprowadzeniem teoretycznym do założeń nowego projektu koła naukowego. Omawia on teoretyczne podstawy stosowania ceramiki w pancerzach kompozytowych oraz problem doboru ceramiki w układach pięciowarstwowych i grubszych.
One of common results of the research and development of composite armor are multi-layered solutions. The problem with independent research in this direction is the limited number of publications dealing with ceramic armors com- posed of more than three layers. In order to fill the gaps in the literature, as a con- tinuation of the EGIDA AGH project, the research will be conducted by the Scien- tific Circle of Military Constructions “Adamantium” as a part of the EGIDA AGH 2.0 project. The scope of the research will include the design and application prop- erties of new multi-layer armor systems and their impact on reducing the surface density of target panels of armored vehicles. This is a theoretical introduction to the assumptions of the new scientific circle project. The presentation discusses the theoretical foundations of using ceramics in composite armor, as well as the problem of selecting ceramics in five-layer and thicker systems.

Źródło:

Potencjał innowacyjny w inżynierii materiałowej i zarządzaniu produkcją; 97-105
9788371939457

Dostawca treści:

Biblioteka Nauki

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Skocz do pozycji: 48.

Tytuł:

Przetwornice statyczne dużej mocy z elementami SiC do pojazdów trakcyjnych
High Power Static Converters for Traction Vehicles Powered by SiC Technology

Autorzy:

Biliński, J.
Buta, S.

Powiązania:

https://bibliotekanauki.pl/articles/253060.pdf

Data publikacji:

2018

Wydawca:

Instytut Naukowo-Wydawniczy TTS

Tematy:

węglik krzemu
przetwornice statyczne
pojazdy trakcyjne
IGBT
silicon carbide
Static converters
traction motor
insulated gate bipolar transistor

Opis:

Wysoka efektywność energetyczna i zwiększona częstotliwość pracy przetwornicy statycznej pozwalają na zminimalizowanie wymiarów układu chłodzenia i zmniejszenie zużycia energii. Nową jakość wnoszą przetwornice statyczne, wykorzystujące technologię SiC. Zmniejszenie masy urządzeń i ich wielkości jest bardzo znaczące (ok. 40–50%). Wyższa częstotliwość przełączania zmniejsza wymiar elementów magnetycznych (ok. 80%), a większa wydajność przekształtnika minimalizuje wymiary układu chłodzenia. Całkowita wydajność przetwornicy jest bardzo wysoka (94–96%). W pracy przedstawiono porównanie parametrów elementów Si i SiC, które są ważne dla nowoczesnych rozwiązań pojazdów elektrycznych. W artykule przedstawiono również parametry przetwornicy pomocniczej SiC, zaprojektowanej i wykonanej jako najnowocześniejszy produkt dla liniowych lokomotyw elektrycznych.
High energy efficiency and increasing the working frequency of the converter will make it possible to minimize the size of the cooling system and reduce energy consumption. Auxiliary converters using the SiC technology are a new quality. The reduction of weight and size is very significant (ca. 40–50%). Higher switching frequency reduces the size of magnetic components (ca. 80%), and higher converter efficiency minimizes the size of the cooling system. The overall efficiency of the converter is extremely high (94–96%). This paper presents comparison of Si and SiC parameters which are important for modern solutions, dedicated for railway traction vehicles. Paper presents also parameters of SiC auxiliary converter, designed and manufactured as state-of-the-art product for modern mainline electric locomotives.

Źródło:

TTS Technika Transportu Szynowego; 2018, 11; 41-44
1232-3829
2543-5728

Pojawia się w:

TTS Technika Transportu Szynowego

Dostawca treści:

Biblioteka Nauki

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Skocz do pozycji: 49.

Tytuł:

Materiały ceramiczne stosowane w osłonach balistycznych
Ceramic materials for armor applications

Autorzy:

Cegła, M.

Powiązania:

https://bibliotekanauki.pl/articles/236101.pdf

Data publikacji:

2014

Wydawca:

Wojskowy Instytut Techniczny Uzbrojenia

Tematy:

pancerz ceramiczny
tlenek glinu
węglik krzemu
węglik boru
twardość
odporność na pękanie
ceramic armor
alumina
silicon carbide
boron carbide
hardness
fracture toughness

Opis:

W artykule przedstawiono rozwój pancerzy ceramicznych oraz rolę ceramiki w nowoczesnym pancerzu kompozytowym. Materiały ceramiczne posiadają wyjątkowe właściwości, dzięki którym są z powodzeniem stosowane jako elementy pancerza. Są to niska gęstość, wysoka twardość oraz zdolność do rozpraszania energii poprzez mechanizm kruchego pękania. Pozwala to na zwiększenie odporności pancerza na działanie pocisków przeciwpancernych przy jednoczesnym obniżeniu jego masy powierzchniowej w porównaniu z tradycyjnymi osłonami stalowymi. W artykule omówiono i porównano główne materiały ceramiczne stosowane na osłony balistyczne; tlenek glinu, węglik krzemu, węglik boru oraz kilka innych. Wymieniono i opisano właściwości tych materiałów oraz ich wpływ na odporność balistyczną.
This overview briefly discusses the development of ceramic armor and the role of ceramic materials in modern composite armor systems. Ceramics possess exceptional characteristics such as low density, high hardness and good ability to dissipate energy through fracture, which make them suitable for defeating armor piercing projectiles and at the same time reducing the areal density of the armor system, comparing to traditional steel armors. Due to high penetrating capabilities of modern AP projectiles, ceramic materials will continue to play a significant role in ballistic protection. Main materials such as Alumina, Silicon Carbide, Boron Carbide and few others are characterized and compared. Properties of ceramic materials and their influence on ballistic performance are listed and described.

Źródło:

Problemy Techniki Uzbrojenia; 2014, 43, 131; 19-25
1230-3801

Pojawia się w:

Problemy Techniki Uzbrojenia

Dostawca treści:

Biblioteka Nauki

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Skocz do pozycji: 50.

Tytuł:

Preliminary Tests of Cellular SiC/Iron Alloy Composite Produced by a Pressureless Infiltration Technique

Autorzy:

Lipowska, B.
Psiuk, B.
Cholewa, M.
Kozakiewicz, Ł.

Powiązania:

https://bibliotekanauki.pl/articles/380467.pdf

Data publikacji:

2017

Wydawca:

Polska Akademia Nauk. Czytelnia Czasopism PAN

Tematy:

kompozyty ceramiczno-metalowe
ceramika porowata
żeliwo
węglik krzemu
ceramic-metal composites
porous ceramics
cast iron
silicon carbide

Opis:

Preliminary tests aimed at obtaining a cellular SiC/iron alloy composite with a spatial structure of mutually intersecting skeletons, using a porous ceramic preform have been conducted. The possibility of obtaining such a composite joint using a SiC material with an oxynitride bonding and grey cast iron with flake graphite has been confirmed. Porous ceramic preforms were made by pouring the gelling ceramic suspension over a foamed polymer base which was next fired. The obtained samples of materials were subjected to macroscopic and microscopic observations as well as investigations into the chemical composition in microareas. It was found that the minimum width of a channel in the preform, which in the case of pressureless infiltration enables molten cast iron penetration, ranges from 0.10 to 0.17 mm. It was also found that the ceramic material applied was characterized by good metal wettability. The ceramics/metal contact area always has a transition zone (when the channel width is big enough), where mixing of the components of both composite elements takes place.

Źródło:

Archives of Foundry Engineering; 2017, 17, 1; 115-120
1897-3310
2299-2944

Pojawia się w:

Archives of Foundry Engineering

Dostawca treści:

Biblioteka Nauki

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