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Wyświetlanie 1-15 z 74
Tytuł:
Development of Superior Thermal Protective Coating on Carbon Composites
Autorzy:
Bae, Soo Bin
Lee, Ji Eun
Paik, Jong Gyu
Cho, Nam Choon
Lee, Hyung Ik
Powiązania:
https://bibliotekanauki.pl/articles/354076.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
composite
silicon carbide
CVR
CVD
Opis:
A superior SiC based thermal protection coating process for carbon composite, which can be especially effective in a hot oxidizing atmosphere, was established in this study. A multi-coating process based on a combination of Chemical Vapor Reaction (CVR) and Chemical Vapor Deposition (CVD) was developed. Various protective coating layers on carbon composite were tested in hot oxidizing surroundings and the test results verified that the thermal ablation rate could be dramatically reduced down to 3.8% when the protective multi-coating was applied. The thermal protection mechanism of the coating layers was also investigated.
Źródło:
Archives of Metallurgy and Materials; 2020, 65, 4; 1371-1375
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface
Autorzy:
Grodzicki, M
Mazur, P
Wasielewski, R
Ciszewski, A
Powiązania:
https://bibliotekanauki.pl/articles/173424.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
silicon carbide
chromium
electric contacts
graphitization
Opis:
Ohmic electrical contacts were formed at room temperature on n-type, Si-oriented 6H-SiC substrates, with Cr layers vapor-deposited under ultra-high vacuum conditions on the samples being graphitized prior to the deposition. The contacts reveal a very good linearity of the local I–V characteristics. This method of ohmic contact formation does not require the use of samples with high doping concentration and the application of high-temperature annealing during the processing of contacts. Results of characterization of the contacts and of the in situ graphitization process of the SiC substrates, obtained by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and atomic force microscopy (AFM) with conducting tip, are given in this paper.
Źródło:
Optica Applicata; 2013, 43, 1; 91-98
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TiAl-based Ohmic Contacts to p-type 4H-SiC
Autorzy:
Martychowiec, Agnieszka
Kwietniewski, Norbert
Kondracka, Kinga
Werbowy, Aleksander
Sochacki, Mariusz
Powiązania:
https://bibliotekanauki.pl/articles/1844507.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ohmic contact
SiC
silicon carbide
TiAl
Opis:
This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 3; 459-463
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849000.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849019.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849057.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Selection of 5 kW Converter Leg for Power Electronic System
Autorzy:
Zygmanowski, M.
Michalak, J.
Jeleń, M.
Jarek, G.
Powiązania:
https://bibliotekanauki.pl/articles/973060.pdf
Data publikacji:
2017
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
IGBT
Silicon Carbide (SiC)
MOSFET
Inverter
Microgrid
Opis:
Three converter leg variants are analyzed for low power converter used for power electronic system for residential buildings. The two-level Si-IGBT and SiC-MOSFET converters are compared with Si-IGBT three-level T-type converter. Power losses generated in each of these converters over a predicted period of 20 years of operation are contrasted with the cost of converter options. The detailed selection procedure for output inductor is presented in this paper. This procedure shows the influence of the inductor parameters like number of turns, air gap length on its losses, cost and size. Theoretical approach is verified with simulations and experimental results.
Źródło:
Measurement Automation Monitoring; 2017, 63, 8; 282-287
2450-2855
Pojawia się w:
Measurement Automation Monitoring
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Manufacturing and Wear Properties of SiC Coating Layer on Zr alloy Fabricated by Vacuum Kinetic Spray Process
Autorzy:
Ham, Gi-Su
Kim, Kyu-Sik
Lee, Kee-Ahn
Powiązania:
https://bibliotekanauki.pl/articles/356701.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
vacuum kinetic spray
silicon carbide
microstructure
wear
Opis:
This study manufactured a SiC coating layer using the vacuum kinetic spray process and investigated its microstructure and wear properties. SiC powder feedstock with a angular shape and average particle size of 37.4 μm was used to manufacture an SiC coating layer at room temperature in two different process conditions (with different degrees of vacuum). The thickness of the manufactured coating layers were approximately 82.4 μm and 129.4 μm, forming a very thick coating layers. The SiC coating layers consisted of α-SiC and β-SiC phases, which are identical to the feedstock. Cross-sectional observation confirmed that the SiC coating layer formed a dense structure. In order to investigate the wear properties, ball crater tests were performed. The wear test results confirmed that the SiC coating layer with the best wear resistance achieved approximately 4.16 times greater wear resistance compared to the Zr alloy. This study observed the wear surface of the vacuum kinetic sprayed SiC coating layer and identified its wear mechanism. In addition, the potential applications of the SiC coating layer manufactured using the new process were also discussed.
Źródło:
Archives of Metallurgy and Materials; 2019, 64, 2; 519-523
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative investigation of SiC and Si power electronic devices operating at high switching frequency
Autorzy:
Zymmer, K.
Mazurek, P.
Powiązania:
https://bibliotekanauki.pl/articles/200057.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
semiconductor devices
silicon carbide
high frequency converters
Opis:
The paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/ěs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10–200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 4; 555-559
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of the Aluminium Alloy EN AC-51100 after Laser Surface Treatment
Autorzy:
Tański, T.
Pakieła, W.
Janicki, D.
Tomiczek, B.
Król, M.
Powiązania:
https://bibliotekanauki.pl/articles/353290.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
laser treatment
aluminium alloy
silicon carbide
wear resistance
Opis:
In this paper, the influence of a laser surface treatment on the structure and properties of aluminium alloy has been determined. The aim of this work was to improve the tribological properties of the surface layer of the EN AC-51100 aluminium alloy by simultaneously melting and feeding silicon carbide particles into the molten pool. The silicon carbide powder was introduced into the liquid metal using a gravity feeder within a constant feed rate of 1 g/min. A high power diode laser (HPDL) was used for remelting. Laser beam energies used in experiments were 1.8 kW, 2.0 kW and 2.2 kW, combined with the constant velocity of 50 mm/min. As a result of the laser treatment on the aluminium alloy, a composite layer with greater hardness and wear resistance compared to the based material was obtained.
Źródło:
Archives of Metallurgy and Materials; 2016, 61, 1; 199-204
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DC characteristics of the SiC Schottky diodes
Autorzy:
Janke, W.
Hapka, A.
Oleksy, M.
Powiązania:
https://bibliotekanauki.pl/articles/202279.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silicon carbide
Schottky diodes
static characteristics
high-temperature
Opis:
The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained. In the presented investigations, for relatively high currents and ambient temperatures, the influence of self-heating on the SiC Schottky diodes static characteristics is significant. The large (even 4 V for the ambient temperature 300.C ) values of voltages corresponding to the nominal diode currents have been observed.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 2; 183-188
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices
Autorzy:
Trochimiuk, P.
Zdanowski, M.
Rabkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/201436.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
inverters
silicon carbide
power MOSFET
battery
energy storage
Opis:
This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional – it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% – peak value is 97.8%.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 6; 1085-1094
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conducted EMI performance comparison of Si and SiC MOSFETS in a CCM boost PFC converter for MIL-STD-461F CE102
Autorzy:
Kavak, H.
Iskender, I.
Jahi, A.
Powiązania:
https://bibliotekanauki.pl/articles/378353.pdf
Data publikacji:
2018
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
CCM Boost converter
silicon
silicon carbide
conducted EMI
CE102
Opis:
This paper presents a comparison of conducted EMI performance of Si and SiC MOSFETs in a CCM PFC boost converter that is designed to meet CE102 of MIL-STD- 461F. EMI performance comparison is based on MOSFET of the PFC converter. That is, the power switch of the converter is the only parameter that is changed during tests. The boost diode is kept the same during the tests and the type of the boost diode is SiC. The paper shows the CE102 test results of Si and SiC MOSFETs without an EMI filter at the input side of CCM PFC boost converter.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2018, 95; 87-94
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Temperature Oxidation Property of SiC Coating Layer Fabricated by Aerosol Deposition Process
Autorzy:
Ham, G.-S.
Kim, S.-H.
Park, J.-Y.
Lee, K.-A.
Powiązania:
https://bibliotekanauki.pl/articles/352142.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silicon carbide
aerosol deposition
coating
high temperature oxidation
Opis:
This study investigated the high temperature oxidation property of SiC coated layer fabricated by aerosol deposition process. SiC coated layer could be successfully manufactured by using pure SiC powders and aerosol deposition on the Zr based alloy in an optimal process condition. The thickness of manufactured SiC coated layer was measured about 5 μm, and coating layer represented high density structure. SiC coated layer consisted of α-SiC and β-SiC phases, the same as the initial powder. The initial powder was shown to have been crushed to the extent and was deposited in the form of extremely fine particles. To examine the high temperature oxidation properties, oxidized weight gain was obtained for one hour at 1000°C by using TGA. The SiC coated layer showed superior oxidation resistance property than that of Zr alloy (substrate). The high temperature oxidation mechanism of SiC coated layer on Zr alloy was suggested. And then, the application of aerosol deposited SiC coated layer was also discussed.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 2B; 1347-1351
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A current-source concept for fast and efficient driving of silicon carbide transistors
Autorzy:
Rąbkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/141047.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silicon carbide transistors
gate drivers
current-source
switching process
Opis:
The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.
Źródło:
Archives of Electrical Engineering; 2013, 62, 2; 333-343
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 74

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