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Wyszukujesz frazę "85.40.-e" wg kryterium: Temat

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    Wyświetlanie 1-11 z 11
    Tytuł:
    Reducing Leakage Power for SRAM Design Using Sleep Transistor
    Autorzy:
    Khandelwal, S.
    Akashe, S.
    Sharma, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399668.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.40.-e
    Opis:
    Low power design is the industry buzzword these days in present chip design technologies. Caches occupy around 50% of the total chip area and consume considerable amount of power. This project's focus is to reduce leakage power consumption of an 8 kbit SRAM by employing techniques like power gating. The main technique used in power gating is the use of sleep transistor. In our design we have chosen a stack-based implementation.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 185-187
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Czochralski-Grown Silicon Crystals for Microelectronics
    Autorzy:
    Bukowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399431.pdf
    Data publikacji:
    2013-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Fq
    85.40.-e
    Opis:
    The Czochralski method of crystal growth is used since 1950s in scientific and industrial laboratories for growth of single crystals of large size and high quality. The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 2; 235-238
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs
    Autorzy:
    Ratajczak, J.
    Łaszcz, A.
    Czerwinski, A.
    Kątcki, J.
    Tang, X.
    Reckinger, N.
    Yarekha, D.
    Larrieu, G.
    Dubois, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807511.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.40.-e
    68.37.Lp
    Opis:
    The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-89-S-91
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Phase Noise Minimization in CMOS Voltage Controlled Oscillators
    Autorzy:
    Charlamov, J.
    Navickas, R.
    Baskys, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506209.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.40.-e
    85.40.Qx
    07.50.Hp
    Opis:
    Relaxation RC type voltage controlled oscillator is more desirable for many applications because of wide frequency generation range, small size on chip and linear voltage to frequency transfer characteristic. The limiting factor of such voltage controlled oscillator type is that it has higher phase noise in comparison with liquid crystal oscillators. We discuss how different device components, parameters and configuration influence phase noise, including transistor noise sources dependence on its geometrical parameters. The simulation results of the relaxation voltage controlled oscillator which was implemented in different 180 nm and 90 nm CMOS technologies are reported.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 234-236
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Soft X-Ray Spectromicroscopy and its Application to Semiconductor Microstructure Characterization
    Autorzy:
    Gozzo, F.
    Franck, K.
    Howells, M. R.
    Hussain, Z.
    Warwick, A.
    Padmore, H. A.
    Triplett, B. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963346.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.-d
    85.40.-e
    79.60.-i
    Opis:
    The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft X-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An Advanced Light Source μ-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 697-705
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Transformations in Ion Bombarded InGaAsP
    Autorzy:
    Ratajczak, R.
    Turos, A.
    Stonert, A.
    Nowicki, L.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504046.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 136-139
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
    Autorzy:
    Ratajczak, R.
    Werner, Z.
    Barlak, M.
    Pochrybniak, C.
    Stonert, A.
    Zhao, Q.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402209.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 845-848
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
    Autorzy:
    Kulik, M.
    Kobzev, A.
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Bak-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538976.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    61.72.uf
    66.10.C-
    61.80.Jh
    81.20.-n
    82.80.Yc
    85.40.-e
    Opis:
    Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 332-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Unstable Inverse Heat Transfer Problems in Microelectronics
    Autorzy:
    De Mey, G.
    Bogusławski, B.
    Kos, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400120.pdf
    Data publikacji:
    2013-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    02.30.Zz
    44.05.+e
    85.40.Qx
    Opis:
    Inverse heat transfer problems are very important for the thermal testability of integrated circuits. Temperature sensors integrated on the same chip measure in real time the power dissipation in one or more critical heat sources of the circuit in order to prevent overheating. It will be demonstrated that these kinds of problems can give rise to mathematical unstabilities or the ill conditioning of the inverse problem. This statement will be proved with the help of several particular cases.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 4; 637-641
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Bivalve Characterization Using Synchrotron Micro X-Ray Fluorescence
    Autorzy:
    Jones, K.
    Bronson, S.
    Brink, P.
    Gordon, C.
    Mosher-Smith, K.
    Brown, M.
    Chaudhry, S.
    Rizzo, A.
    Sigismondi, R.
    Whitehurst, M.
    Lukaszewski, A.
    Kranz, D.
    Bland, K.
    Gordan, D.
    Lobel, J.
    Sullivan, J.
    Metzger, M.
    O'Shea, C.
    Harris, C.
    Arezzo, R.
    Kambhampati, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808352.pdf
    Data publikacji:
    2009-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    01.40.-d
    07.85.Qe
    82.80.Ej
    87.59.-e
    Opis:
    Bivalves, oysters, mussels, and clams are important constituents of riverine and estuarine ecosystems. Their shells and soft tissues provide information on the environments in which they live. Since they are filter feeders, they also are factors in improving water quality through removal of particulate matter from the water column. Finally, they are a valuable food source that has substantial economic value. Hence, characterization of shells and soft tissues is useful for improved understanding of these factors. Here, we used X-ray microprobes and computed microtomography facilities at the Brookhaven National Synchrotron Light Source to investigate elemental distributions in bivalves taken from locations around New York, Washington, DC, and New Orleans, LA. The results form the initial basis for compilation of a database of relevant parameters that can serve for tracking environmental changes and for assessing toxicity of particular metals. The work was enabled by active collaboration with students from the several regions, community groups, and research scientists. The collaboration was facilitated through use of web conferencing between Brookhaven National Laboratory and the varied locations.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 2; 477-481
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    From Acoustic Waves to Microwaves
    Autorzy:
    Mendes Pacheco, G.
    Salvi Sakamoto, J.
    Kitano, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377945.pdf
    Data publikacji:
    2015-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    43.35.Sx
    42.79.Jq
    51.40.+p
    42.79.-e
    43.35.Zc
    84.40.-x
    85.60.-q
    Opis:
    We present here some results of our research related to the optoelectronics and photonics and show all the experimental setups used. Starting with a discussion on the importance of the waves, we demonstrate our achievements based on employment of acoustic, optical, and microwaves and their technological use. The results concern the acousto-optic and electro-optic effects. The generalized analysis of the electro-optic effect reveals a new high induced birefringence in lithium niobate. A patented optical fiber microphone is presented, and its applications to the measurements of acoustic wave velocity in gases and in the laser ultrasound non-destructive evaluation system are discussed. Finally, the generation of microwaves by an optical method with substantial cost reduction is presented.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 1; 25-28
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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