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Wyświetlanie 1-15 z 77
Tytuł:
Resonant Magnetotunneling in Double-Barrier Structures
Autorzy:
Kaczmarek, E.
Powiązania:
https://bibliotekanauki.pl/articles/1950873.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
Opis:
In this paper we consider the influence of "mass barrier" and elastic scattering processes on the shape of j(V) and j(B) characteristics. Two scattering mechanisms, i.e. Coulombic on ionized impurities and on potential fluctuations in double-barrier structures are considered. The "mass barrier" shifts the whole j(V) characteristic slightly towards lower voltage and makes the resonant energy E$\text{}_{R}$ dependent on magnetic field. On the other hand, both considered scattering mechanisms change the shape of j(V) and j(B) characteristics by shifting the oscillation maxima towards lower applied voltage.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 833-836
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Accumulation Layer on Rcsonant Tunneling in Double-Barrier Structures
Autorzy:
Kaczmarek, E.
Powiązania:
https://bibliotekanauki.pl/articles/1933785.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
Opis:
The existing theory of the resonant tunneling phenomena in double-barrier structures takes into account the energy quantization in the well confined between the barriers only. In real tunneling structures there is another well, i.e., the accumulation well in the spacer region separating the highly doped region and the double-barrier structure. In the present paper the transmission coefficient for double-barrier structures with an accumulation layer as a function of applied voltage has been derived. The experimentally observed oscillations of the tunneling current can be explained by the obtained quantization of the energy spectrum in the accumulation well.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 755-758
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Resonant Tunneling for CdTe-CdMgTe Structures
Autorzy:
Kaczmarek, E.
Powiązania:
https://bibliotekanauki.pl/articles/1968116.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
Opis:
In this paper we present model calculations of the current-voltage characteristics for the CdTe/CdMgTe double barrier structures based on the assumption that the electron effective masses in the barrier and well regions of double barrier structure are different. The main features of the measured I-V characteristics, i.e., the small current peak at low bias and much larger peak at high voltage, are reproduced quite well by the calculated curve. The results of magnetotunneling experiments can be also understood in the frame of the proposed model.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 801-804
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Resonant Tunneling for Parabolic Double Barrier Structure
Autorzy:
Kaczmarek, E.
Powiązania:
https://bibliotekanauki.pl/articles/1991547.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
Opis:
In this paper the resonant tunneling through the double barrier structure with the parabolic quantum well is studied theoretically. The transmission coefficient for such a structure as a function of applied voltage and the current-voltage characteristics are calculated and compared with those for the double barrier structure with the rectangular quantum well. The conclusion is that the resonant tunneling through parabolic double barrier structure can be used as a method of determination of the conduction band offset of the barrier and the well materials.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 379-382
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
Autorzy:
Andreev, V.
Bondarenko, G.
Maslovsky, V.
Stolyarov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1381776.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.40.Gk
Opis:
The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric $SiO_2$-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the $SiO_2$ film and $Si-SiO_2$ interface.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1371-1373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
Autorzy:
Andreev, V.
Bondarenko, G.
Maslovsky, V.
Stolyarov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402221.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.40.Gk
Opis:
Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 887-890
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Torque in Semiconductor Single Planar Tunnel Junctions
Autorzy:
Wilczyński, M.
Barnaś, J.
Świrkowicz, R.
Powiązania:
https://bibliotekanauki.pl/articles/1813514.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
73.40.Ty
Opis:
Transport in a single planar tunnel junction with electrodes made of a ferromagnetic semiconductor is analyzed theoretically in the zero- -temperature limit. Tunneling current and both (in-plane and out-of-plane) components of the spin torque exerted on one of the ferromagnetic electrodes are determined as a function of the angle\thet a between magnetic moments of the electrodes. The influence of the bias voltage and spin splitting of the electron band (in both electrodes) on the spin torque components is analyzed numerically.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 35-38
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Coefficient for a Double-Barrier Quantum Well Structure
Autorzy:
Kaczmarek, E.
Szkiełko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1891331.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
73.40.Gk
Opis:
In this paper the transmission coefficient for a double-barrier quantum well (DBQW) structure as a function of applied voltage is calculated, for the first time, using WKB approximation: This approach allows to discuss a dependence of several quantities characteristic of the system (e.g. the value of the coefficient, resonance voltage, charge stored in the well) on the barrier and the well parameters.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 441-444
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metal-Polymer-Metal System in the High Static Electric Field
Autorzy:
Radny, M.
Karpowicz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1892603.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Rw
73.40.Gk
Opis:
The negative differential resistance phenomenon evident on current-voltage (I-V) characteristics for Al-plasma-polymerized polystyrene-Al system is described by means of the Schottky-like barrier model constructed directly from the simplified electronic band structure of an insulator.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 325-331
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Transmission Coefficient for the Double δ-Function Potential
Autorzy:
Yanetka, I.
Powiązania:
https://bibliotekanauki.pl/articles/2014026.pdf
Data publikacji:
2000-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
73.20.Dx
Opis:
The unbound-state solution of the Schrödinger equation is examined for the potential that is defined as the sum of two δ'-functions of non-equal strengths. The analytical expression for the transmission coefficient is derived from the solution. The transmission coefficient has an absolute maximum at the zero wave number. Further, the transmission coefficient is shown to exhibit relative maxima and minima. Moreover, it is proved that the transmission coefficient in its relative maxima is larger and in its relative minima is smaller than the transmission coefficient for the corresponding single δ'-function potential.
Źródło:
Acta Physica Polonica A; 2000, 97, 6; 1053-1060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements
Autorzy:
Przybytek, J.
Stankiewicz, R.
Gryglas-Borysiewicz, M.
Baj, M.
Cavanna, A.
Faini, G.
Powiązania:
https://bibliotekanauki.pl/articles/2048142.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Td
73.40.Gk
Opis:
During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si δ-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 723-725
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures
Autorzy:
Belyaev, A. E.
Vitusevich, S. A.
Glavin, B. A.
Konakova, R. V.
Dobrowolski, W.
Mąkosa, A.
Kravchenko, L. N.
Gornev, E. S.
Powiązania:
https://bibliotekanauki.pl/articles/1947897.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 727-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling
Autorzy:
Figielski, T.
Wosiński, T.
Mąkοsa, A.
Kaniewska, M.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1933735.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrier resonant-tunnelling devices. The competition between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 707-710
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Investigation by Scanning Tunnelling Microscopy in Liquid Medium
Autorzy:
Phaner, M.
Robach, Y.
de Villeneuve, C.
Wojczuk, S.
Olejniczak, W.
Porte, L.
Powiązania:
https://bibliotekanauki.pl/articles/1929313.pdf
Data publikacji:
1993-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.Ch
73.40.Gk
Opis:
Scanning tunneling microscopy in liquid environment has gained an increased interest in recent years. The specific features of the in situ observation of surface structures at the solid/liquid interface are first presented. Next, a high resolution imaging of high oriented pyrolytic graphite (HOPG) graphite surface shows the potentiality of our home-made microscope. The last study, performed on technological InP. substrates, illustrates the extensive applications of in situ imaging in the fields of semiconductor technology.
Źródło:
Acta Physica Polonica A; 1993, 83, 5; 611-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Traversal Time through Double-Barrier Resonant Tunneling Structure
Autorzy:
Figielski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929681.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
There are certain confusing statements in the literature concerning a physical time that is responsible for a high-frequency limit in operation of double-barrier resonant tunneling devices. Here, it is shown that an electron traversal time, introduced earlier by ours, exhibits no singularity on resonance and might be a good candidate for the quantity in question.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 587-589
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 77

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