Analysis of Resonant Tunneling for CdTe-CdMgTe Structures

In this paper we present model calculations of the current-voltage characteristics for the CdTe/CdMgTe double barrier structures based on the assumption that the electron effective masses in the barrier and well regions of double barrier structure are different. The main features of the measured I-V characteristics, i.e., the small current peak at low bias and much larger peak at high voltage, are reproduced quite well by the calculated curve. The results of magnetotunneling experiments can be also understood in the frame of the proposed model.