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Wyświetlanie 1-15 z 42
Tytuł:
A New Look on the Skin Depth of the Normal Skin Effect in a Metal Submitted to a Frequency-Dependent Electromagnetic Field
Autorzy:
Olszewski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1400153.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30+q
Opis:
The theory of the skin depth in metals is re-examined by revision of the conductivity expression entering the Maxwell equations leading to the normal skin effect. In fact this conductivity formula should be improved by considering its special behaviour at low temperatures in case of the presence of the magnetic field. For very pure specimens and very low temperatures the correction of the conductivity tensor leads to the skin depth approximately proportional to the square root of the amplitude strength of the magnetic field.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 750-751
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Small and Large Signal Analysis of Terahertz Generation from InN n$\text{}^{+}$nn$\text{}^{+}$ Structures with Free-Carrier Grating
Autorzy:
Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:
https://bibliotekanauki.pl/articles/2041674.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
Opis:
Electron transport in long (up to 15μm) InN n$\text{}^{+}$nn$\text{}^{+}$ structures is theoretically investigated by the Monte Carlo particle technique at low lattice temperatures when optical phonon emission is the dominating scattering mechanism. It is shown that at constant bias a free-carrier grating can be formed inside the n-region. Such a grating is found to be responsible for microwave power generation in the THz frequency range. The generation mechanism is similar to that in submicron n$\text{}^{+}$nn$\text{}^{+}$ structures under quasiballistic transport conditions.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 163-168
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Small-Signal Characterization of FET/HEMT for Terahertz Applications
Autorzy:
Starikov, E.
Shiktorov, P.
Gružinskis, V.
Marinchio, H.
Nouvel, P.
Torres, J.
Palermo, C.
Chusseau, L.
Varani, L.
Ziadé, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505675.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
Opis:
Calculations of the small-signal response of InGaAs HEMTs by using the hydrodynamic approach coupled with a pseudo-2D Poisson equation are performed. The spectra of small-signal admittance and impedance are found to demonstrate series of the resonant peaks corresponding to excitation of plasma waves. Possibilities and conditions of instability onset and THz signal detection are discussed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 203-205
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of THz-Electro-Optical Sampling Measurements
Autorzy:
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Powiązania:
https://bibliotekanauki.pl/articles/1813215.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
Opis:
We carry out a theoretical analysis of THz-electro-optical sampling experimental technique applied to semiconductor structures. The difficulties/impossibility of determining the small-signal conductivity spectrum in the framework of such a technique are analyzed and discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 913-916
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel
Autorzy:
Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505736.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
Opis:
Electron transport and drain current noise in field effect transistor with $n^+$ $nn^+$ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 215-217
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection
Autorzy:
Kozič, A.
Paškevič, Č.
Sužiedėlis, A.
Gradauskas, J.
Ašmontas, S.
Szerling, A.
Wrzesińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/2047175.pdf
Data publikacji:
2006-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
72.30.+q
Opis:
In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.
Źródło:
Acta Physica Polonica A; 2006, 110, 6; 845-849
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
Autorzy:
Łusakowski, J.
Knap, W.
Kamińska, E.
Piotrowska, A.
Gavrilenko, V.
Powiązania:
https://bibliotekanauki.pl/articles/2035755.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30.+q
73.61.Ey
Opis:
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 545-551
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resistive Sensor for Short High-Power Microwave Pulse Measurement in Millimeter Wave Range
Autorzy:
Tamošiūnas, V.
Kancleris, Ž
Dagys, M.
Simniškis, R.
Agee, F.
Powiązania:
https://bibliotekanauki.pl/articles/1177568.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
85.30.De
Opis:
We report on the numerical investigation of the resistive sensor for the 78-118 GHz range. A three-dimensional finite-difference time-domain method was applied to simulate the wave propagation within a waveguide segment with the semiconductor sensor attached to a wider wall of the wave-guide. The electric field distribution, voltage standing-wave ratio and the average electric field dependences on frequency have been determined for several sets of dimensions and specific resistances of the sample. It is demonstrated that a proper selection of the dimensions and specific resistance of the sample can compensate the waveguide dispersion and the decrease of the electron heating effect with frequency. Therefore, a nearly constant sensitivity of the sensor can be obtained for the entire frequency range.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 420-424
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Plasma Oscillations in Nanotransistors: Application to THz Radiations Detection and Generation
Autorzy:
Marinchio, H.
Sabatini, G.
Palermo, C.
Nouvel, P.
Torres, J.
Varani, L.
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Powiązania:
https://bibliotekanauki.pl/articles/1505457.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Nj
72.20.Ht
72.30.+q
Opis:
By means of a numerical hydrodynamic model, we consider the mechanism of collective plasma oscillations in a field-effect transistor channel under different excitations and biasing conditions. First, we consider the case of a device externally-excited by a harmonic optical beating or an electronic excitation under constant current condition at the drain. Both situations exhibit sharp resonances related to the first odd plasma modes illustrating the possibility of using the HEMT as a terahertz photomixer or detector. Then, we demonstrate that the frequencies, amplitudes and quality factors of the resonances can be strongly modified by varying the drain biasing condition from current- to voltage-driven operation.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 103-106
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves
Autorzy:
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Powiązania:
https://bibliotekanauki.pl/articles/1505464.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 117-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors
Autorzy:
Nouvel, P.
Torres, J.
Marinchio, H.
Laurent, T.
Palermo, C.
Varani, L.
Teppe, F.
Shiktorov, P.
Starikov, E.
Gruzinskis, V.
Powiązania:
https://bibliotekanauki.pl/articles/1505652.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Nj
72.20.Ht
72.30.+q
Opis:
Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of $f_0$ ± 10 GHz (with $f_0$ from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 199-202
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits
Autorzy:
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Vaissière, J.
Reggiani, L.
Pérez, S.
González, T.
Powiązania:
https://bibliotekanauki.pl/articles/1178800.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 396-399
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique
Autorzy:
Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1813353.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of $10^{15} cm^{-3}$ is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 943-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Plasma Instability Noise in InP n⁺nn⁺ Structures: Monte Carlo Simulation
Autorzy:
Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1813377.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
The current noise in n⁺nn⁺ InP structures at dominating low temperature (T = 10 K) optical phonon emission is simulated by Monte Carlo particle technique. The n-region length of simulated structures is varied from 1 to 100 μm. The peaks related to the near collisionless and optical phonon emission dominated plasma instabilities are recognized in current noise spectral density spectra.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 947-950
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
Autorzy:
Starikov, E.
Shiktorov, P.
Gružinskis, V.
Varani, L.
Vaissière, J. C.
Palermo, C.
Reggiani, L.
Powiązania:
https://bibliotekanauki.pl/articles/2041806.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
72.70.+m
Opis:
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A$\text{}_{3}$B$\text{}_{5}$ compounds. This property is favorable for applications of nitrides in the THz frequency range.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 408-411
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 42

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