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Tytuł:
Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors
Autorzy:
Shatkovskis, E.
Galickas, A.
Kiprijanovič, O.
Powiązania:
https://bibliotekanauki.pl/articles/2041752.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.70.Jv
07.57.Yb
42.62.Hk
Opis:
A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value I$\text{}_{c}$=5×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for InAs and (1-4)×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration t$\text{}_{opt}$ 1-10 ps the photomagnetoelectric signal in the terahertz range may be generated.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 271-274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron DX State in CdTe:In
Autorzy:
Skierbiszewski, C.
Wiśniewski, P.
Litwin-Staszewska, E.
Suski, T.
Wilamowski, Z.
Zakrzewski, A. K.
Karczewski, G.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1952096.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
73.61.Ga
Opis:
In this paper we investigate electron emission/capture from/to the DX state of indium in CdTe by means of high pressure freeze-out cycle and steady-state photo-conductivity experiments. The results indicate that the DX state is occupied by two electrons. A comparison with deep level transient spectroscopy data shows that two-electron emission occurs at low temperatures, while one-electron emission takes place at high temperatures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transition Metal Impurities and Electronic Structure of ZnSe-Based Isovalent Semiconductor Alloys
Autorzy:
Surkova, T. P.
Giriat, W.
Godlewski, M.
Permogorov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968432.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
71.55.Gs
Opis:
Energy level positions of the nickel 2+/1+ and cobalt 2+/3+ charge states have been used to estimate band edges for the valence and conduction bands of ZnSe-based alloys with cation (ZnCdSe) and anion (ZnSSe) substitution. Chemical trends in band offsets of heterostructures of Zn- or Mn-based II-VI compounds are analysed. Further on, the change of Ni$\text{}^{2+}$(3d$\text{}^{8}$) and Co$\text{}^{2+}$(3d$\text{}^{7}$) intra-d shell transition bands upon the alloying of host material is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1009-1012
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time-Resolved Emission from Semiconductor Microcavities
Autorzy:
Kłopotowski, Ł.
Viña, L.
Kavokin, A.
Dang, L. S.
André, R.
Powiązania:
https://bibliotekanauki.pl/articles/2038372.pdf
Data publikacji:
2004-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.36.+c
71.55.Gs
78.47.+p
Opis:
We present a time-resolved study of the light emission of a CdTe-based microcavity. In the nonlinear regime, under high excitation conditions, in the strong coupling regime, we observe pronounced beats of the intensity of the photoluminescence arising from the bottleneck region of the exciton-polariton band. These beats are very sensitive to the excitation density and vanish under weak pumping conditions. We attribute the beats to a new nonlinear coupling mechanism of optically active and dark crystal states, related to polariton-polariton scattering, which leads to mixing between bright and dark states.
Źródło:
Acta Physica Polonica A; 2004, 106, 3; 435-442
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Nature of Potential Fluctuations in the MBE CdTe/CdMgTe Quantum Well in a Magnetic Field: Experiment and Theory
Autorzy:
Szot, M.
Karpierz, K.
Avetisyan, A. A.
Djotyan, A. P.
Kossut, J.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047014.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.15.Rn
72.80.Ey
73.21.Fg
Opis:
Far infrared photoconductivity spectra of CdTe/Cd$\text{}_{0.8}$Mg$\text{}_{0.2}$Te quantum well uniformly n-type doped with iodine in barriers and in the well were investigated as a function of the magnetic field. The spectra were recorded for several fixed far infrared photon energies and peaks corresponding to intra donor transitions were observed. The magnetic field at which the peaks were observed was the same for all far infrared photon energies used. This is interpreted as an evidence of the presence of fluctuations of the electrostatic potential - quantum dots which reduce the dimensionality of the potential in which a shallow donor is placed. A characteristic size of the fluctuations was found to be of 23-25 nm and 30-40 nm. Theoretical calculations show a nonmonotonic dependence of the electron binding energy on the donor centre in such quantum dot, as a function of magnetic field. This explains why the position of experimentally observed peak is insensitive to far infrared photon energy used. Temperature evolution of spectra and the theoretical model proposed, indicate similarities between fluctuations in the two-dimensional structure investigated and fluctuations in bulk systems.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 379-387
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron Methods of the Conduction Band Electronic Structure Analysis
Autorzy:
Kisiel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1812239.pdf
Data publikacji:
2008-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
71.23.+i
71.55.Gs
78.20.Ci
78.70.Dm
Opis:
The experimental and theoretical studies of the density of states for unoccupied conduction band are a valid source of knowledge on the electronic structure of condensed matter. Among known analytical methods of density of states for unoccupied states a significant place is occupied by the methods with the use of intensive synchrotron radiation beam. Adequately chosen monochromatic beam excites electrons from the occupied core states or the valence band to unoccupied states in the conduction band. The most universal experimental method for the studies of the unoccupied conduction band is the X-ray absorption near edge structure analysis for X-ray edges of the constituent atoms of the material. A satisfying description of the unoccupied conduction band density of states can be also reached by the analysis of reflectivity coefficient in the vacuum ultraviolet (above 10 eV). The photoelectron energy distribution curves elaborated by the constant initial state and constant final state procedures deliver valuable information on the high excited states of conduction band. In the paper the menaces of the correct interpretation of the experimental results will be discussed. The efficiency of the unoccupied conduction band density of states studies with application of X-ray absorption near edge structure and analysis of reflectivity coefficient of light will be presented on the basis of several binary and ternary semiconductor compounds of II-VI group with transition metals as well as of some other compounds. To avoid a misinterpretation of the experimental results, the data were compared and discussed with an adequate theoretical band structure calculation.
Źródło:
Acta Physica Polonica A; 2008, 114, 2; 287-307
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated and Laser Emission in CdZnTe/CdMnTe Double Quantum Well Heterostructures
Autorzy:
Kowalczyk, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933829.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
71.55.Gs
Opis:
Stimulated emission by optical excitation has been investigated in CdZnTe/CdMnTe quantum well heterostructures. Laser action has been achieved at 4.2 K and at 77 K with relatively low threshold values of the excitation intensity. Photοluminescence excitation spectra of the stimulated emission were obtained indicating that the optical gain involves exciton-exciton inelastic scattering.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 787-790
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
SrS:Eu and CaS:Eu Thin Films: Influence of Host Lattice on Kinetics of Europium Emission
Autorzy:
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1923720.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.55.Et
Opis:
In this paper we report the studies of photoluminescent properties of CaS:Eu and SrS:Eu thin films containing up to 3 mole % of Eu, grown by the atomic layer epitaxy method. The energy transfer and direct intrashell excitation channels of Eu ions are examined in function of temperature.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 769-772
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction
Autorzy:
Yatsunenko, S.
Khachapuridze, A.
Ivanov, V. Yu.
Godlewski, M.
Khoi, Le Van
Gołacki, Z.
Karczewski, G.
Goldys, E. M.
Phillips, M.
Klar, P. J.
Heimbrodt, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036034.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Fc
76.70.Hb
78.55.Et
Opis:
Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn$\text{}^{2+}$ emission to spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 643-648
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopy of Indirect Excitons in Vertically Stacked CdTe Quantum Dot Structures
Autorzy:
Kukliński, K.
Kłopotowski, Ł.
Fronc, K.
Wojnar, P.
Wojciechowski, T.
Czapkiewicz, M.
Kossut, J.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1492851.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.67.Hc
32.60.+i
Opis:
We show that by means of an electric field we can tune the energy levels in vertical quantum dot pairs and study transitions related to recombination of direct and indirect excitons. With decreasing the reverse bias, we observe both the blue- and red-shifted indirect exciton transitions. Based on the band profile of our device, we conclude that the former corresponds to the recombination of the electron and hole localized in the top and the bottom dot, respectively and the latter is related to the recombination of the electron and hole localized in the bottom and the top dot, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 856-858
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectra of Wideband Dipole Radiation Induced by the Photomagnetoelectric Response in Narrow Gap Semiconductors
Autorzy:
Kiprijanovič, O.
Shatkovskis, E.
Kiprijanovič, L.
Powiązania:
https://bibliotekanauki.pl/articles/1812040.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.Re
71.55.Gs
75.50.Pp
Opis:
The frequency spectra of sign inverted photomagnetoelectric responses in narrow gap semiconductors InSb, InAs, and $Cd_{0.2}Hg_{0.8}Te$, excited by nanosecond laser light pulses, were used for calculation of induced electromagnetic radiation frequency spectra in dipole approximation. The parallelepiped shape sample was considered as capacitor-like point dipole. The known Fourier transform property was used in calculations. Features of double sign inverted signals formation and its spectra are considered and compared with experimental results. The radiation of pulses, having spectra in terahertz range when excited by picosecond laser pulse from capacitor-like radiators that demonstrate double sign inverted photoresponses, is expected.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 761-767
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatial Correlations of Donor Charges in MBE CdTe
Autorzy:
Suski, T.
Wiśniewski, P.
Litwin-Staszewska, E.
Wasik, D.
Przybytek, J.
Baj, M.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934021.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
71.55.Gs
Opis:
We present experimental evidence that at high pressures indium donors in CdTe localize electrons in spatially correlated manner. We have studied Hall mobility, μ$\text{}_{H}$, as a function of electron concentration, n$\text{}_{H}$, at T=77 K. Changes of n$\text{}_{H}$ have been achieved by two methods. High pressure freeze-out of electrons onto localized states of In-donors leads to the mobility enhancement with respect to the situation when n$\text{}_{H}$ has been modified by means of a subsequent annealing of the sample. As a result, depending on the degree of spatial correlations in the impurity charges arrangement, different values of μ$\text{}_{H}$ correspond to the same value of n$\text{}_{H}$. The variation of mobility with electron concentration suggests that the localized state of In-donor represents likely negatively charged DX state.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 929-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of Auger-Type Energy Transfer Processes in Quenching of Anti-Stokes Emission in Chromium and Iron Doped ZnSe: ODMR, Optical and Time-Resolved Study
Autorzy:
Ivanov, V. Yu.
Karczewski, G.
Godlewski, M.
Omel'chuk, A. R.
Belyaev, A. E.
Zhavoronkov, N. V.
Powiązania:
https://bibliotekanauki.pl/articles/2036871.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.55.Et
76.30.Fc
Opis:
Energy up-conversion in chromium and iron doped ZnSe results in the appearance of an anti-Stokes luminescence. The process is efficient in ZnSe:Cr, but not in ZnSe:Fe. We conclude that very efficient three-center Auger processes in ZnSe:Fe quench the anti-Stokes luminescence emission. For chromium doped samples influence of the Auger mechanism is weaker, which we explain by less efficient carrier retrapping by Cr ions. We further discuss possibility of efficient pumping of infrared Cr-related emissions via Cr photoionization transition.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 695-701
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recombination Processes in ZnSe:Eu
Autorzy:
Świątek, K.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1890962.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.50.Ge
Opis:
The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu$\text{}^{2+}$ ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 381-384
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rare-Earth Excitation Mechanism in Wide Band Gap H-VI Compounds
Autorzy:
Karpińska, K.
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929798.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.55.Et
Opis:
The excitation mechanism of rare-earth emission in Eu and Ce doped CaS and SrS is studied. It is proposed that the Eu and probably also Ce emission is induced by the photoionization transition of the rare-earth ion, which is followed by the carrier trapping via the excited state of the ion. At increased temperatures the efficiency of excitation is reduced. We explain this effect by the carrier emission from the excited core state of the rare-earth ion to the continuum of the conduction (valence) band states. It is also suggested that the charge transfer state of the rare-earth ion may act as the intermediate state in the carrier trapping.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 959-962
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 62

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