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Tytuł:
What Types of Stacking Faults and Dislocation Dissociations Can Be Found in Transition-Metal Disilicides
Autorzy:
Paidar, V.
Čák, M.
Šob, M.
Inui, H.
Powiązania:
https://bibliotekanauki.pl/articles/1402088.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
Opis:
Identical atomic planes of transition-metal disilicides can form different stacking when they are ordered in several combinations of four different positions A, B, C, D. The following arrangements can be formed: AB in C11_b structure of e.g. MoSi₂, ABC in C40 structure of e.g. VSi₂ and ABDC in C54 structure of e.g. TiSi₂ disilicides. The ABC atomic plane stacking along the ⟨111⟩ cubic directions is well known in the fcc lattice, where three basic types of stacking faults are known: intrinsic or extrinsic faults and elementary twin, however, other types of stacking faults can be detected in transition-metal disilicides due to the occurrence of the fourth position D. On the other hand, the faults well known in metallic systems as antiphase boundaries need not be metastable in disilicides. Based on the results of ab initio calculations, it can be predicted which types of planar defects are metastable corresponding to the local minima on the energy surface of generalized stacking faults or unstable when they are represented, for example, by saddle points. The character of dissociation of the dislocation cores is directly related to the existence of metastable stacking faults. Moreover, the space distribution of dislocation cores has a direct impact on dislocation mobility and, therefore, also on macroscopic mechanical properties of materials. The behaviour of extended crystal defects in disilicides that is caused by covalent interatomic bonding, is discussed starting from the geometrical analysis, and it is demonstrated that predictions of materials properties can be deduced.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 589-591
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of the Domain Walls Configuration in the Ferroelastic Nanosize Material $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{3-x}$
Autorzy:
Savytskii, D.
Paulmann, C.
Bismayer, U.
Berkowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1550061.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
61.72.-y
61.50.Ah
Opis:
This paper deals with the identification of multidomain configuration in ferroelastic phases of $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{3-x}$ using polychromatic synchrotron X-ray radiation (Laue method). A nondestructive approach for the determination of domain misorientations, orientation of domain walls and their configuration in the nanosize ferroelastic domain structure was developed. The proposed approach can be used to study the nanosize ferroelastic domain structure in small crystals of submillimeter sizes at different external fields, including temperature. The ferroelastic domain structure in the orthorhombic as well as in the rhombohedral phases of $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{3-x}$ crystals has been identified. The intersection of walls leads to the formation of a chevron-like pattern. The observed reversibility of domain patterns during temperature cycles is probably caused by the interaction of domain boundaries with point defects, most likely oxygen vacancies.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 62-73
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Defects in Titanium Created by Hydrogen Charging
Autorzy:
Hruška, P.
Čížek, J.
Knapp, J.
Melikhova, O.
Havela, L.
Mašková, S.
Lukáč, F.
Powiązania:
https://bibliotekanauki.pl/articles/1033958.pdf
Data publikacji:
2017-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.-y
Opis:
Hydrogen interaction with vacancies in α-Ti was investigated employing positron lifetime spectroscopy combined with ab initio theoretical modeling of vacancy-hydrogen complexes. Ab initio modeling revealed that multiple hydrogen atoms up to 7 can be trapped at vacancies in the α-Ti lattice. Trapped H atoms are located close to the nearest neighbor tetrahedral sites around the centre of vacancy. Lifetimes of positrons trapped at vacancies associated with various numbers of hydrogen atoms were calculated. Positron lifetime measurement of H-loaded α-Ti samples revealed that phase transition into the hydride phase introduced dislocations. Vacancies were created by H loading as well and agglomerated into small vacancy clusters.
Źródło:
Acta Physica Polonica A; 2017, 132, 5; 1606-1610
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen-Induced Defects in Palladium
Autorzy:
Melikhova, O.
Čížek, J.
Procházka, I.
Powiązania:
https://bibliotekanauki.pl/articles/1338026.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.-y
Opis:
In the present work positron annihilation spectroscopy was employed for investigation of hydrogen-induced defects in Pd. Well annealed Pd samples were electrochemically charged with hydrogen and development of defects with increasing hydrogen concentration $x_{H}$ was investigated. At low concentrations (α-phase, $x_{H}$ < 0.017 H/Pd) hydrogen loading introduced vacancies, since absorbed hydrogen segregating at vacancies lowers remarkably the vacancy formation energy. When hydrogen concentration exceeds 0.017 H/Pd, particles of palladium hydride (PdH) are formed. Stress induced by growing PdH particles leads to plastic deformation which generates dislocations and vacancies in the sample.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 752-755
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen Interaction with Vacancies in Electron Irradiated Niobium
Autorzy:
Čižek, J.
Procházka, I.
Brauer, G.
Anwand, W.
Gemma, R.
Nikitin, E.
Kirchheim, R.
Pundt, A.
Powiązania:
https://bibliotekanauki.pl/articles/1812478.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.-y
Opis:
Defect studies of Nb irradiated with 10 MeV electrons were performed in the present work by means of positron annihilation spectroscopy. The lattice defects were characterized by positron lifetime spectroscopy. Moreover, defect depth profiles were studied by slow positron implantation spectroscopy. The experimental investigations were accompanied by first principles theoretical calculations of positron parameters. It was found that irradiation-induced vacancies in Nb specimens are surrounded by H, which causes a shortening of the lifetime of trapped positrons. The influence of a Pd and Cr over-layer on the H concentration in the Nb specimens was examined.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1293-1299
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit
Autorzy:
Tarkowski, T.
Słupiński, T.
Karpierz, K.
Powiązania:
https://bibliotekanauki.pl/articles/2048144.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.72.uj
72.20.My
Opis:
Transverse magnetoresistance was studied in monocrystalline GaAs:Te doped above the equilibrium doping limit and annealed to partially deactivate donor impurities. It is shown that in a sample with partial deactivation of Te impurities, which exhibits structural fluctuations in microscale, both strong positive and some negative magnetoresistances arise, which are difficult to understand within the relaxation time approximation in degenerated homogeneous semiconductor. It is discussed that a consideration of the role of spatial fluctuations (in carrier concentration, conductivity, etc.), e.g. as proposed by Herring, allows for an understanding of positive component of magnetoresistance observed in the sample with a distinct microscopic structural disorder. With the aim to better understand the transport in GaAs:Te, a model material doped above the doping limit, we discuss both positive and negative components of measured magnetoresistance.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 726-728
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of casting defects in the single crystal turbine blade airfoil
Autorzy:
Albrecht, R.
Bogdanowicz, W.
Sieniawski, J.
Kubiak, K.
Powiązania:
https://bibliotekanauki.pl/articles/1075923.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ff
61.72.-y
61.66.Dk
Opis:
In the paper turbine blades made from single crystal CMSX-4 superalloy were investigated by X-ray diffraction methods (topography, Ω-scan mapping) complemented by scanning electron microscopy observations. By the X-ray diffraction topography method several misorientation defects were visualized as well as dendrites arrangement. It was discussed that tip of the airfoil and thin walled area of the turbine blades located near the trailing edge can accumulate more growth defects than other airfoil part, due to the complex shape of the mould.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1091-1093
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Detection of "exotic" dopant-related macrodefects in vapour grown CdTe:Cr single crystals
Autorzy:
Popovych, V.
Sagan, P.
Powiązania:
https://bibliotekanauki.pl/articles/1075546.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.50.-f
61.72.-y
61.72.Vv
Opis:
SEM observation of non-typical macrodefects in the form of needle-like second phase particles in highly doped CdTe:Cr single crystals, grown by the modified physical vapour transport method, was reported. They form regular network parallel to the {111} and {100} planes. In the combined analyses using energy dispersive X-ray profiling and high-angle annular dark-field elemental mapping, it has been determined that the observed needle-like aggregates are composed of Cr-Te intermetallic compound, most probably cadmium doped Cr₃Te₄.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 49-51
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Study of the Ferroelastic Domain Structure in $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{3-x}$
Autorzy:
Savytskii, D.
Tataryn, T.
Martynyuk, N.
Bismayer, U.
Powiązania:
https://bibliotekanauki.pl/articles/1550058.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
61.72.-y
61.50.Ah
Opis:
Theoretical analysis of the ferro-elastic domain structure of a $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{2.925}$ crystal in three different crystallographic phases is presented. Parameters of these configurations are obtained using group theoretical approach, the method of spontaneous deformation as well as theoretical interpretation of twinning resulting from mechanical deformation (mechanical twinning theory). In the three phases of $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{2.95}$ - trigonal, orthorhombic and monoclinic - the parameters of ferro-elastic domain structures are determined; namely the quantity of orientation states, symmetry elements of connection between states, orientations and types of domain walls, tensors of spontaneous deformations of the perovskite-type cells for every orientation state, elements of twin shifts, which are needed for the reorientation of some orientation states to others. By using the found parameters of bidomain configurations a mechanism is proposed, which causes chevron-like domain configurations in compounds with martensitic phase transitions.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 48-61
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Symmetry Pattern and Domain Wall Structure in $GdFeO_{3}$ Perovskite Type
Autorzy:
Savytskii, D.
Tataryn, T.
Bismayer, U.
Powiązania:
https://bibliotekanauki.pl/articles/1550088.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
61.72.-y
61.50.Ah
Opis:
Symmetry relations between the domain states in $GdFeO_{3}$ type crystals have been obtained using group-theoretical analysis for prototype and ferroelastic space groups. Models for possible domain pairs are developed. The ion locations on the domain boundary were estimated as intermediate positions between the sites in crystal structure of neighboring domain states. It is shown that the crystalline structure of the boundary approaches to the prototype phase structure - the ideal $ABO_{3}$ perovskite-type structure, however certain deformations remain. In addition to the shifts of the all ions the tilts of oxygen octahedra of the some type and related displacements of A ions should take place during the switching of orientation states. The tilts of octahedra and displacements of A ions are sufficient to form translation states (antiphase domains). Antiphase domains can have boundaries between themselves basically along the three faces of the orthorhombic cell.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 78-85
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-Irradiated Precision Polished Substrate
Autorzy:
Kato, Y.
Umezawa, H.
Shikata, S.
Powiązania:
https://bibliotekanauki.pl/articles/1197907.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
81.05.ug
Opis:
Suitable techniques for the growth of high-quality single-crystal diamond are needed in order to use single-crystal diamond in power devices. Because the ion plantation technique cannot be used for diamond doping, a drift layer and a conduction layer for a diamond power device were grown by chemical vapor deposition. An important challenge in this field is to reduce the dislocation density in the epitaxial layer. The dislocation density was found to increase during the chemical vapor deposition process. Because a defective surface is one cause of increased dislocation density, the use of a UV-polished substrate having no scratches due to mechanical polishing was investigated.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 969-971
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
Autorzy:
Simeg Veternikova, J.
Korhonen, E.
Skarba, M.
Degmova, J.
Sabelova, V.
Sojak, S.
Slugen, V.
Powiązania:
https://bibliotekanauki.pl/articles/1336688.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
68.55.Ln
61.72.J-
Opis:
This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 741-743
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays
Autorzy:
Janavičius, A. J.
Storasta, J.
Purlys, R.
Mekys, A.
Balakauskas, S.
Norgėla, Ž.
Powiązania:
https://bibliotekanauki.pl/articles/2047360.pdf
Data publikacji:
2007-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.72.Dd
05.50.+q
Opis:
We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.
Źródło:
Acta Physica Polonica A; 2007, 112, 1; 55-68
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays
Autorzy:
Janavičius, A. J.
Purlys, R
Norgėla, Ž
Powiązania:
https://bibliotekanauki.pl/articles/2044634.pdf
Data publikacji:
2006-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.72.Dd
05.50.+q
Opis:
We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.
Źródło:
Acta Physica Polonica A; 2006, 109, 2; 159-170
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:
Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Powiązania:
https://bibliotekanauki.pl/articles/2011007.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.10.-i
61.72.-y
Opis:
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 137-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
Autorzy:
Wieteska, K.
Misiuk, A.
Prujszczyk, M.
Wierzchowski, W.
Surma, B.
Bąk-Misiuk, J.
Romanowski, P.
Shalimov, A.
Capan, I.
Yang, D.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1812256.pdf
Data publikacji:
2008-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.c-
61.72.-y
61.82.-d
Opis:
Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content $(c_O)$ up to $1.1×10^{18} cm^{-3}$, admixed with N or Ge (Si-N, c_N ≤ $1.2×10^{15} cm^{-3}$, or Si-Ge, $c_{Ge} ≈ 7×10^{17} cm^{-3}$, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
Źródło:
Acta Physica Polonica A; 2008, 114, 2; 439-446
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dendrite growth in selector-root area of single crystal CMSX-4 turbine blades
Autorzy:
Bogdanowicz, W.
Tondos, A.
Krawczyk, J.
Albrecht, R.
Sieniawski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1058103.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Dk
61.72.-y
61.10.Nz
Opis:
The single crystal turbine blades made of CMSX-4 nickel-based superalloy were studied. The turbine blades were obtained by the Bridgman technique with withdrawal rate of 5 mm/min. The samples, cut-off from root part of blades and containing the fragment of the selector, were studied. The effect of selector geometry on the dendrites growth and defects formation in the selector-root area of the blade were analyzed. The Laue diffraction, scanning electron microscopy, and X-ray diffraction topography were applied. It was found that, during crystallization of the selector, the dendrite cores, after reaching the surface of mould, may bend, if the angle between dendrite cores and the mould surface was equal to 12°. When the angle was equal to 24° the growth of dendrites has been stopped. It can be stated that the defects, which appeared in the selector were inherited by the root part.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1107-1109
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of Intrinsic Defects in CaYAl₃O₇
Autorzy:
da C. Bispo, G.
Jackson, R.
Valerio, M.
Powiązania:
https://bibliotekanauki.pl/articles/1029677.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Bn
61.72.-y
34.20.Cf
Opis:
CaYAl₃O₇ presents a challenge for computer modelling techniques because of its site-occupancy disorder related to the Ca/Y shared site. Supercells were built to reproduce experimental results which have the best agreement and lowest lattice energy. The potential parameters were obtained by empirical fitting, and reproduced the structure to within 1.09%. Results obtained by supercell and the Mott-Littleton methods were compared. Both methods predict oxygen Frenkel defects are likely to be formed.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cobalt Additives Influence on Phase Composition and Defect Structure of Manganese Dioxide Prepared from Fluorine Containing Electrolytes
Autorzy:
Sokolsky, G.
Ivanov, S.
Ivanova, N.
Boldurev, Ye.
Kobulinskaya, O.
Demchenko, M.
Powiązania:
https://bibliotekanauki.pl/articles/1550089.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Fn
61.72.-y
85.40.Ry
Opis:
Manganese dioxide samples were prepared from fluorine containing electrolytes with additives of $Co^{2+}$ ions. Atomic absorption spectroscopy, thermogravimetric analysis, X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis were the methods of the samples characterisation. Manganese dioxide at the presence of cobalt forms nanosized ramsdellite structure crystallites of mostly needle-like morphology with significant content of hydroxide groups. The main phase state in manganese dioxide samples obtained at the presence of cobalt is $γ-MnO_{2}$ with ramsdellite structure and low content of intergrowth defects. The sample doped both with lithium and cobalt can be indexed to a hollandite-type structure (tetragonal; space group I4/m) of $α-MnO_{2}$.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 86-90
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs
Autorzy:
Słupiński, T.
Zielińska-Rohozińska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1968417.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.10.-i
Opis:
Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 971-975
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Origin of point defects in β-Ga₂O₃ single crystals doped with Mg²⁺ ions
Autorzy:
Luchechko, A.
Vasyltsiv, V.
Kostyk, L.
Tsvetkova, O.
Powiązania:
https://bibliotekanauki.pl/articles/1052715.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
78.20.-e
72.40.+w
Opis:
Optical absorption and photoconductivity investigations of nominal pure and Mg²⁺ doped β-Ga₂O₃ single crystals have been carried out. Additional bands in the UV (3.6-4.6 eV) and near-IR (0.4-1.2 eV) spectral regions were found in optical absorption and photoconductivity spectra. A correlation between Mg²⁺ doping, annealing in oxygen atmosphere as well as optical absorption and photoconductivity bands were established in gallium oxide. Electronic transitions from shallow traps and F-centers were observed in the IR spectral region (0.4-1.2 eV). Absorption and photoconductivity in the UV region are related to deep acceptor levels created by native defects and impurities.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 811-815
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The H$\text{}_{2}$ Molecule in Semiconductors: An Angel in GaAs, a Devil in Si
Autorzy:
Estreicher, S. K.
Powiązania:
https://bibliotekanauki.pl/articles/2035568.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
66.30.Lw
72.10.Fk
Opis:
The electrical and optical properties of semiconductors are largely determined by the defects and impurities they contain. Without a doubt, hydrogen is the impurity which exhibits the most varied and exotic properties. In most semiconductors, it is found in three charge states and four configurations. It forms (at least) two types of dimers as well as small and large precipitates such as platelets. H also interacts with impurities and defects. It removes or changes the electrical activity of many shallow and deep centers, and catalyzes the diffusion of interstitial oxygen (in Si). Sometimes, it exhibits quantum tunneling and is associated with unusual effects such as Fermi resonances. But one of the most exotic forms of hydrogen in GaAs and Si is the interstitial H$\text{}_{2}$ molecule, which appears to play a critical role in processes such as the "smart cut". It is the only interstitial molecule observed (so far) in semiconductors. In GaAs, it behaves like a nearly-free rotator, with properties very much as one would expect them to be. But in Si, the early experiments were puzzling. No ortho/para splitting was observed, the symmetry appeared to be C$\text{}_{1}$, the single HD line was at the wrong place and had the wrong amplitude, and other features seemed strange as well. Recent experimental studies have now resolved many issues. However, the behavior of the simplest molecule in the Universe proved to be a tough nut to crack, which goes to show that devils can be a lot more fun than angels after all.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 513-528
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ORR Electrocatalysis on Cr³⁺, Fe²⁺, Co²⁺-Doped Manganese(IV) Oxides
Autorzy:
Sokolsky, G.
Zudina, L.
Boldyrev, E.
Miroshnikov, O.
Gauk, N.
Kiporenko, O.
Powiązania:
https://bibliotekanauki.pl/articles/1030872.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Fn
61.72.-y
85.40.Ry
Opis:
The ionic dopant additives have different mechanisms of their influence upon MnO₂ electrocrystallisation process and depending on dopants added the following polymorphs are stabilised: α -MnO₂ (hollandite, I4/m) - NH₄⁺; γ -MnO₂ (ramsdellite, Pbnm) - Co²⁺, Fe²⁺; layered polymorph δ -MnO₂ (birnessite, C2/m) - Cr³⁺. The defect states of intergrowth method in ramsdellite matrix and twinning, OH groups studied by X-ray diffraction and the Fourier transform infrared mtehod, respectively, indicate their high content in case of Fe²⁺ and Co²⁺-doped manganese dioxide. CVA oxygen reduction reaction peaks were established after experiments in alkaline electrolytes and dioxygen (argon, air) atmosphere. Activity of doped samples studied is comparable with other published data. Both doped with Co²⁺ and Fe²⁺ samples display maximal currents and some distinctive features in oxygen reduction reaction.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 1097-1102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Boriding of binary Ni-Ti and ternary Ni-Ti-Cu shape memory alloys
Autorzy:
Ucar, N.
Turku, N.
Ozdemir, A.
Calik, A.
Powiązania:
https://bibliotekanauki.pl/articles/1065676.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Dk
61.72.-y
62.20.Qp
Opis:
In this work, the boriding of binary (Ni-Ti) and ternary (Ni-Ti-Cu) shape memory alloys was carried out in a solid medium at 1173 K for 8 h using the powder pack method with Ekabor-Ni powders. Characterization of boride layer formed on the surface of alloys was identified by optical microscopy and scanning electron microscopy. TiB₂, NiB₂ and SiC phases in the boride layer of borided binary (Ni-Ti) and ternary (Ni-Ti-Cu) shape memory alloys was confirmed by X-ray diffraction analysis. The microhardness and thickness of the boride layers were measured. The obtained hardness values show a hardness anomaly due to porosity and structural defects with increase of Cu content, while a decrease in the value of hardness moving from the boride layer to main structure was observed.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 492-495
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms
Autorzy:
Kamiński, P.
Kozłowski, R.
Żelazko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1361219.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.80.-x
Opis:
High-resolution photoinduced transient spectroscopy has been applied to investigating the effect of the 1 MeV neutron fluence on the electronic properties of radiation defects in Czochralski grown silicon in magnetic field. A new approach to the analysis of the photocurrent relaxation waveforms as a function of time and temperature has been presented. It is based on using a two-dimensional numerical procedure with implementation of the inverse Laplace transformation for creating images of the sharp spectral fringes depicting the temperature dependences of the thermal emission rate for detected defect centers. In the material irradiated with the fluence of 3×$10^{14} cm^{-2}$, the dominant traps with activation energies of 75 meV and 545 meV are tentatively identified with an aggregate of three Si interstitials and the trivacancy, respectively. In the material irradiated with the fluence by the order of magnitude higher, the activation energies of the main traps are found to be 115, 350, 505, 545, and 590 meV. These traps are tentatively attributed to an aggregate of four Si interstitials, as well as to vacancy related centers such as $V_3$ (2-/-), $V_2O$ (-/0), $V_3$ (-/0) and $V_4$ (-/0), respectively.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 976-981
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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