Autor: Lashkarev, G. V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Detector with High Internal Photocurrent Gain Based on ZnO:N
Autorzy:: Kosyachenko, L. A.
Lashkarev, G. V.
Ievtushenko, A. I.
Lazorenko, V. I.
Sklyarchuk, V. M.
Sklyarchuk, O. F.
Powiązania:: https://bibliotekanauki.pl/articles/2048107.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.15.-z
85.60.Dw
Opis:: The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 681-682
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Study of the clusterization of CdO phase in ZnCdO alloys by modeling fullerene-like Zn₄₄Cd₄O₄₈ cluster
Autorzy:: Ovsiannikova, L.
Kartuzov, V.
Shtepliuk, I.
Lashkarev, G.
Powiązania:: https://bibliotekanauki.pl/articles/1159858.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.22.-f
78.55.Et
81.05.Dz
81.07.Bc
Opis:: The structural, cohesive and electronic properties of fullerene-like isolated Zn₄₄Cd₄O₄₈ cluster with consideration of CdO phase clusterization are studied in the frames of density functional theory B3LYP/3-21G(d). It is revealed that an enlargement of CdO phase content in Zn₄₄Cd₄O₄₈ cluster leads to nonlinear rapid increase in cohesive energy and cluster stability, as well as band-gap energy shrinkage.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-41-A-43
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: XPS and Raman Characterizations of $Zn_{1-x}Cd_{x}O$ Films Grown at the Different Growth Conditions
Autorzy:: Shtepliuk, I.
Khyzhun, O.
Lashkarev, G.
Khomyak, V.
Lazorenko, V.
Powiązania:: https://bibliotekanauki.pl/articles/1403642.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.67.Bf
Opis:: X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the $Zn_{1-x}Cd_{x}O$ semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the $Zn_{1-x}Cd_{x}O$ films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/$O_2$ gas ratio and dc power.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1034-1038
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
Autorzy:: Ievtushenko, A.
Khyzhun, O.
Shtepliuk, I.
Tkach, V.
Lazorenko, V.
Lashkarev, G.
Powiązania:: https://bibliotekanauki.pl/articles/1399119.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
77.55.hf
68.55.Ln
Opis:: Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 858-861
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Fabrication and Properties of the Photosensitive Anisotype $n-Cd_{x}Zn_{1-x}O$/p-CdTe Heterojunctions
Autorzy:: Khomyak, V.
Brus, V.
Ilashchuk, M.
Orletsky, I.
Shtepliuk, I.
Lashkarev, G.
Powiązania:: https://bibliotekanauki.pl/articles/1376075.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.40.+w
73.40.Lq
81.15.Lm
Opis:: We have fabricated photosensitive anisotype $n-Cd_{x}Zn_{1-x}O$/p-CdTe heterojunctions by a deposition of $Cd_{0.5}Zn_{0.5}O$ film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. $n-Cd_{x}Zn_{1-x}O$/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1163-1166
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Swift $Xe^{26+}$ Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films
Autorzy:: Myroniuk, D.
Lashkarev, G.
Shtepliuk, I.
Skuratov, V.
Reszka, A.
Kowalski, B.
Powiązania:: https://bibliotekanauki.pl/articles/1376457.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.60.Hk
Opis:: Here we report the effect of the irradiation by 167 MeV $Xe^{26+}$ ions (in the fluence range up to 3× $10^{12}$ ions/$cm^2$) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1199-1202
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering
Autorzy:: Ievtushenko, A.
Karpyna, V.
Lashkarev, G.
Lazorenko, V.
Baturin, V.
Karpenko, A.
Lunika, M.
Dan'ko, A.
Powiązania:: https://bibliotekanauki.pl/articles/1811931.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.15.Cd
61.05.cp
68.55.jm
Opis:: Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in two- and three-layered ZnO films in comparison with single-layer one.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1131-1137
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Effects of $Ar//O_2$ Gas Ratio on the Properties of the $Zn_{0.9}Cd_{0.1}O$ Films Prepared by DC Reactive Magnetron Sputtering
Autorzy:: Shtepliuk, I.
Lashkarev, G.
Khomyak, V.
Marianchuk, P.
Koreniuk, P.
Myroniuk, D.
Lazorenko, V.
Timofeeva, I.
Powiązania:: https://bibliotekanauki.pl/articles/1492665.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.67.Bf
Opis:: $Zn_{0.9}Cd_{0.1}O$ ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of $Zn_{0.9}Cd_{0.1}O$ films can be controlled by changing the gas ratio of $Ar//O_2$. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-061-A-065
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films
Autorzy:: Myroniuk, D.
Lashkarev, G.
Shtepliuk, I.
Lazorenko, V.
Maslyuk, V.
Timofeeva, I.
Romaniuk, A.
Strelchuk, V.
Kolomys, O.
Khomyak, V.
Powiązania:: https://bibliotekanauki.pl/articles/1399153.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.-x
78.55.Et
71.55.Gs
Opis:: Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences $10^{16}$ and $2 \times 10^{16} cm^{-2}$. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 891-894
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding
Autorzy:: Shtepliuk, I.
Lashkarev, G.
Khyzhun, O.
Kowalski, B.
Reszka, A.
Khomyak, V.
Lazorenko, V.
Timofeeva, I.
Powiązania:: https://bibliotekanauki.pl/articles/1492932.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.67.Bf
81.05.Dz
81.07.Bc
Opis:: ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire $c-Al_2O_3$ substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in $Ar-O_2$ atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 914-917
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 11.

Tytuł:: Studies of Diluted Magnetic Semiconductor $Sn_{1-x-y-z}Ge_{x}Mn_{y}Gd_{z}Te$
Autorzy:: Sichkovskyi, V.
Radchenko, M.
Lashkarev, G.
Slyn'ko, V.
Slyn'ko, E.
Knoff, W.
Domukhovski, V.
Dziawa, P.
Story, T.
Powiązania:: https://bibliotekanauki.pl/articles/1791346.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.My
75.50.Pp
72.80.Ga
Opis:: Magnetization, anomalous Hall effect, thermoelectric power, magnetoresistance, and resistivity of $Sn_{1-x-y-z}Ge_{x}Mn_{y}Gd_{z}Te$ (x = 0.039÷0.597, y = 0.077÷0.125, z = 0.0014÷0.028) mixed crystals were studied over the temperature range 4.2-300 K. The ferromagnetic order with Curie temperature 18-24 K was revealed.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 911-912
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 12.

Tytuł:: Spectral Distribution of Photoelectric Efficiency οf Thin-Film CdS/CdTe Heterostructure
Autorzy:: Kosyachenko, L.
Lashkarev, G.
Grushko, E.
Ievtushenko, A.
Sklyarchuk, V.
Mathew, X.
Paulson, P.
Powiązania:: https://bibliotekanauki.pl/articles/1791326.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.60.Jt
85.60.Dw
73.61.Ga
Opis:: The spectral distribution of the quantum efficiency in thin-film CdS/CdTe solar cells is being investigated by taking into account the drift and diffusion components of photocurrent, recombination at the CdS-CdTe interface, the back surface of the CdTe absorber layer and in the space-charge region. The effect of uncompensated acceptor concentration, lifetime of minority carriers and surface recombination velocity on the charge collection efficiency are discussed. The losses caused by reflections and absorption in the CdS and indium tin oxide layers are also considered.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 862-864
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 13.

Tytuł:: Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures
Autorzy:: Ievtushenko, A.
Lashkarev, G.
Lazorenko, V.
Karpyna, V.
Sichkovskyi, V.
Kosyachenko, L.
Sklyarchuk, V.
Sklyarchuk, O.
Bosy, V.
Korzhinski, F.
Ulyashin, A.
Khranovskyy, V.
Yakimova, R.
Powiązania:: https://bibliotekanauki.pl/articles/1811930.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.15.Cd
85.60.Dw
72.40.+w
Opis:: Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1123-1129
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 14.

Tytuł:: Optical and electrical properties of highly doped ZnO:Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
Autorzy:: Romanyuk, V.
Dmitruk, N.
Karpyna, V.
Lashkarev, G.
Popovych, V.
Dranchuk, M.
Pietruszka, R.
Godlewski, M.
Dovbeshko, G.
Timofeeva, I.
Kondratenko, O.
Taborska,, M.
Ievtushenko, A.
Powiązania:: https://bibliotekanauki.pl/articles/1156366.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Hf
73.61.Ga
Opis:: Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-36-A-40
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 15.

Tytuł:: Ferromagnetism of Narrow-Gap $Ge_{1-x-y}Sn_xMn_yTe$ and Layered $In_{1-x}Mn_xSe$ Semiconductors
Autorzy:: Lashkarev, G.
Sichkovskyi, V.
Radchenko, M.
Dmitriev, A.
Slyn'ko, V.
Slyn'ko, E.
Kovalyuk, Z.
Butorin, P.
Knoff, W.
Story, T.
Szymczak, R.
Jakieła, R.
Aleshkevych, P.
Dobrowolski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1811955.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.My
75.50.Pp
75.30.Et
77.80.Bh
Opis:: Magnetic susceptibility, Hall effect and resistivity of narrow-gap $Ge_{1-x-y}Sn_xMn_yTe$ single crystals (x = 0.083÷0.115; y = 0.025÷0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at $T_C$ ≈ 50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature $T_f$. Magnetic structure of InSe ⟨Mn⟩ 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1219-1227
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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