Swift $Xe^{26+}$ Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

Here we report the effect of the irradiation by 167 MeV $Xe^{26+}$ ions (in the fluence range up to 3× $10^{12}$ ions/$cm^2$) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.