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Tytuł:
Diody świecące jako źródła światła
Lighting emission diodes as a new lighting source
Autorzy:
Pawlak, A.
Powiązania:
https://bibliotekanauki.pl/articles/180845.pdf
Data publikacji:
2007
Wydawca:
Centralny Instytut Ochrony Pracy
Tematy:
oświetlenie
diody
lighting
diodes
Opis:
W artykule przedstawiono przykładowe zastosowania diod świecących małej mocy, ich historię rozwoju oraz ogólną zasadę działania, a także omówiono sposoby wytwarzania światła białego w tych diodach.
This paper presents the evolution of lighting emission diodes (LED) and general rules of their operation. There is also a description of how white light is created in those LEDs.
Źródło:
Bezpieczeństwo Pracy : nauka i praktyka; 2007, 12; 24-27
0137-7043
Pojawia się w:
Bezpieczeństwo Pracy : nauka i praktyka
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DC characteristics of the SiC Schottky diodes
Autorzy:
Janke, W.
Hapka, A.
Oleksy, M.
Powiązania:
https://bibliotekanauki.pl/articles/202279.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silicon carbide
Schottky diodes
static characteristics
high-temperature
Opis:
The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained. In the presented investigations, for relatively high currents and ambient temperatures, the influence of self-heating on the SiC Schottky diodes static characteristics is significant. The large (even 4 V for the ambient temperature 300.C ) values of voltages corresponding to the nominal diode currents have been observed.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 2; 183-188
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zagadnienia optymalizacji konstrukcji diod laserowych dużej mocy
High power laser diodes - design optimisation issues
Autorzy:
Malag, A.
Powiązania:
https://bibliotekanauki.pl/articles/192142.pdf
Data publikacji:
2007
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
dioda laserowa dużej mocy
konstrukcja diod laserowych dużej mocy
optymalizacja wiązki promieniowania
high power laser diodes
high power laser diodes construction
Opis:
Artykuł zawiera skrótowy przegląd aktualnych osiągnięć w dziedzinie konstrukcji diod laserowych (DL) dużej mocy. Zakres artykułu ograniczony został do zagadnień optymalizacji heterostruktury ze względu na parametry, które wydają się najważniejsze dla przyrządów dużej mocy takie, jak sprawność energetyczna (PCE), próg katastroficznej degradacji luster (COD) i jakość emitowanej wiązki promieniowania (M2 i rozbieżność). Przedstawione wyniki (przodujących instytutów i ITME) wskazują, że jednoczesna maksymalizacja wszystkich tych parametrów jest bardzo trudna. Wyniki "rekordowe" są bardzo zróżnicowane ze względu na długość fali i grupę materiałową (arsenki, fosforki).
Current achievements in the field of high-power laser diodes (LD) construction are briefly presented. The scope has been limited to issues of heterostructure optimisation in terms of the parameters the most important for high power devices, such as power conversion efficiency (PCE), COD level and an emitted beam quality (M2 and divergence). Presented results (of leading laboratories and ITME) indicate that simultaneous maximisation of these parameters is very difficult. There is a wide diversity of the record-high attainments in terms of preferred design solutions and due to different wavelengths and material systems.
Źródło:
Materiały Elektroniczne; 2007, T. 35, nr 1, 1; 21-46
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature dependent electrical characteristics of Nichrome/4H-SiC Schottky barrier diodes
Autorzy:
Khanna, Shaweta
Noor, A.
Powiązania:
https://bibliotekanauki.pl/articles/1076274.pdf
Data publikacji:
2019
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Nichrome
Schottky Diodes
Schottky barrier height
ideality factor
rapid thermal annealing
Opis:
Nichrome Schottky barrier diodes have been fabricated on 4H-SiC substrates to investigate the temperature dependant electrical characteristics of the fabricated contacts. The electrical parameters such as barrier height, ideality factor and donor concentration were found from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. Barrier Contacts showed non-ideal behaviour like lower value of barrier height and high value of ideality factor. A barrier height of 1.53eV obtained from C-V measurements and 0.79eV obtained from the I-V measurements with ideality factor of 1.96 for as-deposited diodes at room temperature. The diodes, therefore, were annealed in the temperature range from 25-400 ºC to see the effect of annealing temperature on these parameters. Schottky barrier height (SBH) and ideality factors were found temperature dependent. After rapid thermal annealing (RTA) upto 400 ºC barrier height of 1.27 eV from C-V measurements and the value of 1.13 eV were obtained from I-V measurements with ideality factor of 1.12. Since barrier height deduced from C-V measurements were consistently larger than those from I-V measurements. To remove this discrepancy we re-examined our results by including the effect of ideality factor in the expression of the saturation current. The insertion of ideality factor results in comparably good agreement between the values of barrier height derived by above two methods. We believe that the enhancement in the electrical parameters result from the improvement in the quality of interfacial layer.
Źródło:
World Scientific News; 2019, 116; 169-179
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes
Autorzy:
Bisewski, D.
Myśliwiec, M.
Górecki, K.
Kisiel, R.
Zarębski, J.
Powiązania:
https://bibliotekanauki.pl/articles/220523.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Schottky diodes
transient thermal impedance
thermal measurements
silicon carbide
packaging
Opis:
This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.
Źródło:
Metrology and Measurement Systems; 2016, 23, 3; 451-459
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of RTS noise in reverse polarized Silicon Carbide Schottky diodes
Badanie szumów RTS w diodach SiC spolaryzowanych w kierunku zaporowym
Autorzy:
Szewczyk, A.
Stawarz-Graczyk, B.
Powiązania:
https://bibliotekanauki.pl/articles/266700.pdf
Data publikacji:
2014
Wydawca:
Politechnika Gdańska. Wydział Elektrotechniki i Automatyki
Tematy:
szumy RTS
dioda Schottky'ego
RTS noise
Schottky diodes
Opis:
One of the method of electronic device quality and reliability evaluation is observation of its inherent noise. Generally, the inherent noise of semiconductor device consists of Gaussian (i.e. 1/f, shot noise) and non-Gaussian components (i.e. random telegraph signal, RTS). The RTS phenomena usually indicates the presence of large defects in the structure of the material of the device, therefore it can be treated as an indicator of technology quality. In the paper authors present results of RTS investigations in reverse polarized Silicon Carbide Schottky diodes. Devices being studied are commercially available diodes with reverse voltage UR = 600 V. The RTS was observed during device stress by applying high voltage for several minutes and the change in signal parameters were studied.
Jedną z metod do badania jakości i niezawodności elementów elektronicznych jest obserwacja ich szumów własnych, które zawierają składową gaussowską (szum typu 1/f, szum śrutowy) oraz składową niegaussowską (szum RTS). Obecność szumu RTS zazwyczaj wskazuje na defekty w strukturze materiału, z którego jest wykonany element, ale jednocześnie może być doskonałym wskaźnikiem jakości badanego elementu. W artykule autorzy prezentują wyniki pomiarów w zaporowo spolaryzowanych diodach Schottkiego wykonanych z SiC. Badane elementy są powszechnie dostępnymi o UR = 600 V. Szum RTS był obserwowany po kilkuminutowym użytkowaniu badanego elementu w warunkach wysokiego napięcia.
Źródło:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej; 2014, 40; 103-106
1425-5766
2353-1290
Pojawia się w:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Diody LED - odpady niebezpieczne dla środowiska
LED diodes - environmentally hazardous waste
Autorzy:
Sokołowska, W.
Karaś, A.
Zalewska, I.
Harasimowicz-Siemko, J.
Powiązania:
https://bibliotekanauki.pl/articles/192226.pdf
Data publikacji:
2011
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
dioda LED
ICP-OES
FAAS
ochrona środowiska
recykling
light-emitting diodes
environmental protection
recycling
Opis:
W Laboratorium Charakteryzacji Materiałów Wysokiej Czystości ITME przeprowadzono analizę składu chemicznego kilku rodzajów diod LED obecnych na polskim rynku [2]. Omówiono zawartość metali kancerogennych oraz metali niebezpiecznych dla środowiska . Porównano je z rezultatami uzyskanymi w UCI (Uniwersytet Kalifornia) opisanymi w [1] i normami TTCL.
An analysis of the chemical composition of several types of light-emitting diodes available on the Polish market was conducted in the Department of High Purity Materials Characterization of ITME [2]. In the course of the analysis, the content of carcinogenic metals and environmentally hazardous metals was explored. The findings were compared with the results achieved at the University of California, Irvine, described in [1], and with TTCL standards.
Źródło:
Materiały Elektroniczne; 2011, T. 39, nr 2, 2; 23-26
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of IGCT turn-on transients in circuit configurations with series connected diodes
Autorzy:
Tschirley, S.
Bernet, S.
Powiązania:
https://bibliotekanauki.pl/articles/262745.pdf
Data publikacji:
2006
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
Opis:
This paper describes the effect of series connected diodes and their balancing networks m the clamp circuit in IGCT converters. It is shown, that the balancing of the clamp diodes has other requirements than the balancing of the series connected freewheeling diodes in the switch cell. The dynamic and static balancing of the clamp diodes is analyzed in detail.
Źródło:
Electrical Power Quality and Utilisation. Journal; 2006, 12, 2; 33-39
1896-4672
Pojawia się w:
Electrical Power Quality and Utilisation. Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Detection of Persisting Photoelectrons in AlGaAs Double Heterostructure Laser Diodes by DLTS
Autorzy:
Brehme, S.
Powiązania:
https://bibliotekanauki.pl/articles/1879950.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
Opis:
LPE-made AlGaAs double heterostructure laser diodes having a Sn-doped n-type confinement layer were investigated. A significant change of the low-temperature part of DLTS spectra and C(T) curves was observed after applying forward or higher reverse voltage. Relaxation of the curves took several hours. This persistent photoconductivity phenomenon is explained by photoionization of the DX centres.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 239-242
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy
Autorzy:
Nowakowski-Szkudlarek, Krzesimir
Muziol, Grzegorz
Żak, Mikolaj
Hajdel, Mateusz
Siekacz, Marcin
Feduniewicz-Żmuda, Anna
Skierbiszewski, Czesław
Powiązania:
https://bibliotekanauki.pl/articles/173471.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
gallium nitride
molecular beam epitaxy
contacts
Opis:
We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping levelas high as 2 × 1020 cm–3.
Źródło:
Optica Applicata; 2020, 50, 2; 323-330
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Light-Emitting Diodes Illumination Period and Light Intensity on High Rate Algal Reactor System in Laundry Wastewater Treatment
Autorzy:
Tangahu, B. V.
Triatmojo, A.
Purwanti, I. F.
Kurniawan, S. B.
Powiązania:
https://bibliotekanauki.pl/articles/123276.pdf
Data publikacji:
2018
Wydawca:
Polskie Towarzystwo Inżynierii Ekologicznej
Tematy:
algae
Chlorella vulgaris
laundry wastewater
illumination period
light-emitting diodes
light intensity
microalgae
Opis:
Wastewater that contains high concentration of nutrients can create instability in water ecosystem if left untreated. Laundry wastewater contains nutrients in high concentration. The nutrients that commonly found in laundry wastewater are nitrogen and phosphorus. This study had a purpose to determine the effect of illumination period and light intensity for the removal of Chemical Oxygen Demand (COD), Nitrogen-ammonia (NH3-N), and phosphate (P) content using Chlorella vulgaris in High Rate Algal Reactor (HRAR) treatment. Variables that used were exposure period of 12 and 24 hours and light intensity of 2000–3000 Lux, 4000–5000 Lux, and 6000–7000 lux. The parameters tested to determine the efficiency of nutrient removal were COD, Nitrogen-ammonia, phosphate and Chlorophyll α to determine the condition of algae development. The results showed that the highest nutrient removal were obtained by the reactor with 24 hours illumination period with light intensity of 6000–7000 Lux that was capable of removing 54.63% of COD, and 22.15% of P. The 12-hour illumination period was better in terms of NH3-N removal, up to 50.07%. On the basis of the of statistic test result, the illumination period did not significantly influence the removal efficiency of COD, NH3-N and P indicated by P-value >0.05, while the light intensity significantly affect the removal of COD and NH3-N showed by P value <0.05.
Źródło:
Journal of Ecological Engineering; 2018, 19, 6; 170-175
2299-8993
Pojawia się w:
Journal of Ecological Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Breakdown Mechanisms in Vacuum Diodes
Autorzy:
Osmokrović, P.
Ilić, D.
Stanković, K.
Vujisić, M.
Lončar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1535645.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
51.50.+v
Opis:
This paper investigates the roles of different mechanisms constituting the process of electrical breakdown in vacuum. Random variable "vacuum breakdown voltage" was measured for pulse breakdowns in five types of vacuum diodes, with different values of vacuum pressure and inter-electrode gap. Conclusions about the influence of vacuum pressure and inter-electrode distance on the parameters of theoretical statistical distributions have been drawn. Based on the distribution to which the "vacuum breakdown voltage" random variable adheres, the dominance of certain breakdown mechanisms has been established for specific ranges of vacuum pressure. The observed absence of anode vacuum breakdown at small inter-electrode gaps has been given a theoretical interpretation.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 585-588
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure equation as novel strategy for optimum reflector design
Autorzy:
Ou, Chung-Jen
Powiązania:
https://bibliotekanauki.pl/articles/174423.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
illumination design
light-emitting diodes
structure equation
Opis:
The optimal use of energy resources is the central dogma for green technology and bio-optics. Reflectors provide a simple and fundamental structure for energy transport from a light emitting diode (LED) chip, and an appropriately designed reflector can reduce the fabrication cost of secondary optics for the LED. This paper demonstrates the role of three proposed reflector geometric factors in the two performance metrics – uniformity and collected energy (power), for designing LED reflectors. Through canonical factor analysis, a linear structure equation for LED reflector is suggested, and the methodology for designing the optimal shape is discussed. In addition, a generalized factor and a synthesis response are proposed for a more comprehensive investigation of optical performance. Results indicate a key parameter for balancing the optical performance, and the effects of various parameters and the trade-offs are revealed.
Źródło:
Optica Applicata; 2020, 50, 1; 95-110
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectrally tunable light source based on light-emitting diodes for custom lighting solutions
Autorzy:
Burgos-Fernandez, F. J.
Vilaseca, M.
Perales, E.
Herrera-Ramirez, J. A.
Martinez-Verdu, F. M.
Pujol, J.
Powiązania:
https://bibliotekanauki.pl/articles/173803.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
solid state lighting
light-emitting diodes
CIE standard illuminants
minimization algorithm
customized lighting design
radiometry
Opis:
This study describes a novel spectral LED-based tunable light source used for customized lighting solutions, especially for the reconstruction of CIE (Commission Internationale de l'Eclairage) standard illuminants. The light source comprises 31 spectral bands ranging from 400 to 700 nm, an integrating cube and a control board with a 16-bit resolution. A minimization algorithm to calculate the weighting values for each channel was applied to reproduce illuminants with precision. The differences in spectral fitting and colorimetric parameters showed that the reconstructed spectra were comparable to the standard, especially for the D65, D50, A and E illuminants. Accurate results were also obtained for illuminants with narrow peaks such as fluorescents (F2 and F11) and a high-pressure sodium lamp (HP1). In conclusion, the developed spectral LED-based light source and the minimization algorithm are able to reproduce any CIE standard illuminants with a high spectral and colorimetric accuracy able to advance available custom lighting systems useful in the industry and other fields such as museum lighting.
Źródło:
Optica Applicata; 2016, 46, 1; 117-129
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reconfigurable Antennas: the State of the Art
Autorzy:
Yashchyshyn, Y.
Powiązania:
https://bibliotekanauki.pl/articles/226828.pdf
Data publikacji:
2010
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
antenna arrays
reconfigurable antennas
semiconductor devices
MEMS switches
surface PIN diodes
Opis:
The paper provides an overview of the state of the art in the area of reconfigurable antennas. This emerging area has been rapidly developing in the recent years. This article brings a comprehensive summary of the high quality applied and fundamental research contributions in the above-mentioned field. A broad spectrum of topics is covered, reflecting the areas in which Institute of Radioelectronics's expertise is recognized worldwide.
Źródło:
International Journal of Electronics and Telecommunications; 2010, 56, 3; 319-326
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes
Autorzy:
Bajda, M.
Trzeciakowski, W.
Majewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492843.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.60.Jb
Opis:
We present results of theoretical studies of external tuning for laser diodes based on InGaAsP/InP heterostructures at temperatures from 300 K down to 80 K and at hydrostatic pressures up to 2.27 GPa. The tuning range achieved by pressure and grating was 390 nm (from 1220 nm to 1610 nm). At lower temperatures the tuning range achieved with grating was significantly reduced. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 852-855
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Źródło światła z matrycą diod superelektroluminescencyjnych (SLED) dla celów pomiarowych
The source of light with array of superluminescent diodes (SLED) for measurement purposes
Autorzy:
Odon, A.
Krawiecki, Z.
Powiązania:
https://bibliotekanauki.pl/articles/153056.pdf
Data publikacji:
2007
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
stabilizowane źródła światła
diody superelektroluminescencyjne stabilizowane półprzewodnikowe źródła światła
matryce LED
stabilized source of light superluminescsent light-emitting
diodes
stabilized LED sources
Led arrays
Opis:
Zaprezentowano opis konstrukcji i zasady działania stabilizowanego źródła światła z matrycą zawierającą dziesięć szeregowo połączonych diod superluminescencyjnych (SLED) przeznaczonego dla celów pomiarowych. Dzięki zastosowaniu stabilizacji temperaturowej diod i układu regulacji z ujemnym, optycznym sprzężeniem zwrotnym uzyskano efekt stabilizacji mocy promieniowania i charakterystyki spektralnej diod superelektroluminescencyjnych.
In this paper the construction and principle of operation of a stabilized source of the light with an array made by 10 connected in series superluminescent diodes are described. By using the thermal stabilisation of the diodes and an optical feedback loop the output power level of SLEDs as well radiation spectral characteristics of SLEDs can be stabilized.
Źródło:
Pomiary Automatyka Kontrola; 2007, R. 53, nr 9 bis, 9 bis; 332-335
0032-4140
Pojawia się w:
Pomiary Automatyka Kontrola
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zasilacz diod laserowych dużej mocy o regulowanym prądzie w zakresie 0-60 A
Power supply of high-power laser diodes with regulated current in the range of 0-60 A
Autorzy:
Świderski, J.
Pichola, W.
Powiązania:
https://bibliotekanauki.pl/articles/210327.pdf
Data publikacji:
2008
Wydawca:
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Tematy:
zasilanie diod laserowych
kontrola parametrów diod laserowych
power supply of laser diodes
control of diode laser parameters
Opis:
W artykule przedstawiono opracowany zasilacz diod laserowych dużej mocy wraz z układem chłodzenia umożliwiający kontrolę i sterowanie ich podstawowych parametrów. Zasilacz ten gwarantował na wyjściu prąd stabilizowany i regulowany w przedziale 0-60 A, przy napięciu nie większym niż 4 V z możliwością ograniczenia wartości maksymalnej prądu. Ponadto zasilacz ten umożliwiał: zadanie wartości prądu płynącego przez diodę, ustawienie temperatury diody w zakresie 15-30°C, monitorowanie aktualnej temperatury diody, kontrolę stanów pracy termochłodziarki i zasilacza mocy.
The paper presents the developed diode laser supply system including a cooling system. It ensures monitoring and controlling basic parameters of laser diodes. The system delivers, at its end, the stabilized and regulated current in the range of 6-60 A (by the voltage up to 4 V) with the possibility of limiting the maximum current value. Moreover, the diode laser supply provides: setting the current value flowing through a diode junction before switching-on the diode, monitoring the value of the current flowing through a diode, setting the diode temperature in the range of 15-30°C, monitoring a current temperature of a diode, control of the operating conditions of a thermo-cooler and power supply.
Źródło:
Biuletyn Wojskowej Akademii Technicznej; 2008, 57, 1; 263-276
1234-5865
Pojawia się w:
Biuletyn Wojskowej Akademii Technicznej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental evaluation of circuit board components under extreme conditions
Autorzy:
Sokół, Krzysztof
Ptak, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2106230.pdf
Data publikacji:
2022
Wydawca:
Politechnika Białostocka. Oficyna Wydawnicza Politechniki Białostockiej
Tematy:
experimental test
mathematical model
semiconductor diodes
thermal chamber
WCA
Opis:
Designing products operating in harsh conditions is a challenging task. Years of experience, developed standards and good practices are crucial in achieving the intended result. The article shows a methodology for designing electronic systems based on the worst-case analysis (WCA) and comparing its outcomes with the experimental verification of an actual circuit through large-scale tests. The analysed diode-based semiconductor circuit is part of a temperature measuring system of industrial application. The objective of the design and analysis process is to achieve a reliable solution, which has all the required functionalities under actual, extreme operating conditions. The preliminary circuit design is developed using ideal components. The truth table, which represents customer requirements, is created to check the correct operation of the system. Simulation software, such as LTSpice, are used as the main tools to verify the correct functioning based on ideal or close-to-real component models. Next, based on the results of computer simulations, the WCA is conducted, considering all extreme (worst) operating environment parameters, such as, among others, ambient temperature or ageing. WCA results were verified through an experimental, large-scale measurement of the real system, with defined forward voltage as a function of the current flowing through the semiconductor at various ambient temperatures.
Źródło:
Acta Mechanica et Automatica; 2022, 16, 1; 8--15
1898-4088
2300-5319
Pojawia się w:
Acta Mechanica et Automatica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of InGaN laser diodes based on numerical simulations
Autorzy:
Sakowski, K.
Strak, P.
Krukowski, S.
Marcinkowski, L.
Powiązania:
https://bibliotekanauki.pl/articles/1075368.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
02.60.Cb
Opis:
Simulations of blue and green laser diodes with InGaN quantum wells are presented. In this study, a particular emphasis on efficiency and optical power of the structures was placed. Effect of the aluminum content in an electron blocking layer on the electron overflow and efficiency is discussed. Substantial decrease of efficiency of laser diodes is reported for low aluminum levels. It is also shown that polarization charges existing in AlInGaN heterostructures grown on GaN polar direction and low ionization degree of magnesium acceptors lead to high resistance of these devices. These effects hinder the carriers from reaching an active region and consequently they impose high operating voltages.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-33-A-35
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
C,N-cyklometalowane kompleksy irydu(III) : wydajne emitery fosforescencyjne dla organicznych diod elektroluminescencyjnych (OLED). Cz. 1 i 2
C,N-cyclometalated iridium(III) complexes : efficient phosphorescent emitters for organic electroluminescent diodes (OLED). Part 1 and 2
Autorzy:
Orwat, Bartosz
Kownacki, Ireneusz
Powiązania:
https://bibliotekanauki.pl/articles/1413294.pdf
Data publikacji:
2021
Wydawca:
Polskie Towarzystwo Chemiczne
Tematy:
emitery fosforescencyjne
diody elektroluminescencyjne
kompleksy irydu(III)
phosphorescent emitters
light-emitting diodes
iridium(III) complexes
Opis:
Organic electroluminescent panels have been widely available on the commercial market for several years, in the form of screens used in mobile phones, tablets, and TV sets. The display panels are produced in RGB technology, in which iridium(III) coordination compounds act as phosphorescent emitters of red and green light. Because of their high emission quantum efficiency and stability, the emitters containing 2-phenylpyridinato ligands and their derivatives have proved to be particularly useful. An interesting issue was the contrast between an extensive state of knowledge on the abovementioned compounds and a poor state of knowledge on analogous iridium(III) complexes equipped with benzo[h]quinolinato ligands. Application of the latter seemed interesting because of the similar size of benzo[h]quinoline and 2-phenylpyridine coordination pockets, but much more rigid structure and a greater degree of conjugation of the former, which could have a significant impact on the properties of complexes equipped with this type of ligand. Regarding to the above, this dissertation concerns the subject of the design and synthesis of new iridium(III) coordination compounds equipped with a benzo[h]quinoline motif, as well as the analysis of the structural changes impact on the photophysical, electroluminescent, thermal, electrochemical and spectroscopic properties of selected classes of compounds targeted for the application in OLED technology. Accordingly, the article presents the results of studies on two classes of heteroleptic of C,N-cyclometalated iridium(III) complexes, namely, of the salt type with the general formula [Ir(bzq)2(N^N)]+A-, stabilized by structurally different N,N-donating ligands, as well as neutral coordination compounds of the type [Ir(bzq)2(N^O)], bearing N,O-donating ß-ketoiminato ligands in the structure equipped with aryl moieties of various structure. The work included research on the determination of the correlation between the structure of ancillary ligand introduced into the coordination sphere of the metal and the above-mentioned properties. Additionally, based on the results of quantum-chemical calculations, work was undertaken to develop synthetic pathways enabling the incorporation to the C,N-cyclometalating benzo[h]quinoline ligand of substituents characterized by different stereo-electronic properties, enabling the modification of the emission parameters of the target complexes. In the next phase of research, the functionalized precursors of the bzq ligand were successfully used in the synthesis of binuclear complexes, key reagents in the preparation of corresponding mononuclear iridium coordination derivatives with electroluminescent properties.
Źródło:
Wiadomości Chemiczne; 2021, 75, 1-2; 163-231
0043-5104
2300-0295
Pojawia się w:
Wiadomości Chemiczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Concept and implementation of adaptive road lighting concurrent with vehicles
Autorzy:
Zalewski, S.
Pracki, P.
Powiązania:
https://bibliotekanauki.pl/articles/200253.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
lighting technology
road lighting
lighting control
light emitting diodes
Opis:
The paper presents the authors’ concept of an adaptive road lighting that is concurrent with vehicles moving on roads. The lighting system is based on luminaires with light emitting diodes. The authors describe the operation of the adaptive road lighting system and point out benefits and limitations of the solution. The theoretical considerations are supported by an analysis of the installed and working system that was implemented at Bożeny street in Poznan, Poland. The system was also evaluated by the residents living near the street.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 6; 1117-1124
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of junction temperature on the spectral power distribution of Light Emitting Diodes
Autorzy:
Budzyński, Ł
Powiązania:
https://bibliotekanauki.pl/articles/115467.pdf
Data publikacji:
2015
Wydawca:
Fundacja na Rzecz Młodych Naukowców
Tematy:
LED
junction temperature
spectral power
measurement
temperatura złącza
widmo mocy
pomiary
Opis:
This article describes electrical method for measuring junction temperature of high power LEDs. Measurement system consisting of a temperature controller and a thermostatic chamber was designed and constructed. A number of studies of LEDs in a typical thermal conditions that exist in luminaries were performed. Basing on these results, influence of junction temperature on luminous flux and spectral power distribution of LED was determined. Obtained results allow to optimize the construction of LED lighting fixtures, in the ambient temperature range from 0°C to 100°C, especially in the aspect of improving the photometric properties of the luminaire.
Źródło:
Challenges of Modern Technology; 2015, 6, 4; 3-7
2082-2863
2353-4419
Pojawia się w:
Challenges of Modern Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroluminescence Enhancement of Polymer Light Emitting Diodes Through Surface Plasmons by Ag Nanoplates
Autorzy:
Aziz, T.
Salleh, M.
Bakar, N.
Umar, A.
Rahman, M.
Powiązania:
https://bibliotekanauki.pl/articles/1186484.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
Opis:
This paper reports a study on the surface plasmon effect of Ag nanoplates on electroluminescent property of polymer light emitting diodes. The diode is a single layer light emitting device made of poly [9,9-di-(2-ethylhexyl)-fluorenyl-2,7-diyl] (PEHF). 5 wt.% of Ag nanoplates were incorporated into the PEHF layer. The results showed that the electroluminescence intensity of the diodes is increased by 51.85%, compared with the device without the Ag nanoplates. The enhancement is due to the coupling process between the Ag surface plasmon with the emission light from the PEHF. The occurrence of the coupling process was proved firstly based on the fact that the exciton lifetime of the PEHF:Ag layer is shorter than that without Ag, as measured by time-resolved photoluminescence spectroscopy. Secondly, the PEHF photoluminescence peak at 425 nm is overlaping with the surface plasmon absorption peak of Ag nanoplates.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 711-713
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of electrical non-isolated load sharing systems operation with use of the auctioneering diodes
Autorzy:
Kozak, Maciej
Powiązania:
https://bibliotekanauki.pl/articles/376808.pdf
Data publikacji:
2019
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
DC link
microgrids
FOC
asynchronous generator
synchronous generator
load sharing
Opis:
The paper presents the background and results of numerical simulation and experimental research of a system using auctioneering diodes used to distribute the power of direct current between two power converters operating in parallel. Non-isolated power distribution systems using blocking diodes are used in the ship's electrical power systems, however, they create problems related to control and the possibility of ground faults. Another issue occurring during the operation of this type of systems is the increased heat dissipation. Selected problems related to the operation of the above systems have been identified by means of simulation studies and experiments carried out in a 11 kVA laboratory system and the theoretical basis along with results are provided in the article.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2019, 98; 77-88
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design of LED collimator for uniform illumination using two freeform lenses
Autorzy:
Zeng, J.
Li, X.
Ge, P.
Powiązania:
https://bibliotekanauki.pl/articles/173429.pdf
Data publikacji:
2018
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
illumination design
lenses
light-emitting diodes
optical design
high uniformity
Opis:
Regulating the illuminance distribution of an LED collimator to produce a uniform illumination in both the near field and the far field is a challenge in illumination design. In this paper, we present an effective method for designing two separated freeform lenses to control the illuminance distribution and the direction of the rays from the LED. The first lens redistributes the ray energy, and the second one collimates them to obtain a uniform collimated illumination. According to the conservation law of energy, Snell’s law, Fermat’s law and tangent-plane iterative method, the two freeform surfaces could be calculated simultaneously. The simulation results show that the two freeform lenses can control most of rays into an angle within ±1.5° for an LED with 1 × 1 mm size. The illuminance uniformities are higher than 0.9 in both the near field and the far field.
Źródło:
Optica Applicata; 2018, 48, 3; 413-420
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of Vanadium/Vanadium Pentoxide/Vanadium (V/V₂O₅/V) Tunnel Junction Diodes
Autorzy:
Zia, M.
Abdel-Rahman, M.
Al-Khalli, N.
Debbar, N.
Powiązania:
https://bibliotekanauki.pl/articles/1401362.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Kk
Opis:
A metal/insulator/metal (MIM) diode is a structure in which a thin oxide layer is sandwiched between two metal layers. Metal/insulator/metal (MIM) diodes coupled to antennas have been widely investigated as detectors for millimeter wave and infrared radiation for imaging and spectroscopic applications. In this work, we report on the fabrication and characterization of MIM tunnel junction diodes by using a new material combination, vanadium-vanadium pentoxide-vanadium (V/V₂O₅/V), with contact areas of 2× 2 μm². The V/V₂O₅/V MIM was fabricated using electron-beam lithography, sputter deposition and conventional liftoff methods. The fabricated V/V₂O₅/V MIM diodes showed a maximum absolute sensitivity of 2.35 $V^{-1}$. In addition, noise spectra for the fabricated MIM diodes were measured and analyzed.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1289-1291
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes
Autorzy:
Diniz, R.
Smoliner, J.
Gornik, E.
Suski, T.
Meiners, U.
Brugger, H.
Powiązania:
https://bibliotekanauki.pl/articles/1861459.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Gk
Opis:
Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 625-628
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ocena dokładności firmowych modeli diod Schottkyego z węglika krzemu
Evaluation of models accuracy of SiC Schottky diodes
Autorzy:
Bisewski, D.
Zarębski, J.
Powiązania:
https://bibliotekanauki.pl/articles/376490.pdf
Data publikacji:
2015
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
modelowanie
dioda Schottky'ego
SPICE
węglik krzemu
Opis:
W pracy przedstawiono wyniki weryfikacji eksperymentalnej wybranych modeli diod Schottky’ego z węglika krzemu, oferowanych przez producentów rozważanych przyrządów półprzewodnikowych. W tym celu modele diod zaimplementowano w programie SPICE i przeprowadzono symulacje wybranych charakterystyk statycznych oraz charakterystyk C(u) tych przyrządów. Przeprowadzono ocenę dokładności modeli poprzez porównanie charakterystyk obliczonych tymi modelami z charakterystykami zmierzonymi diod, dostępnymi w ich kartach katalogowych. Do badań wybrano wykonane z węglika krzemu diody Schottky’ego trzech producentów: ST Microelectronics, GeneSiC oraz Rohm.
The paper presents the results of experimental verification of selected models of the silicon carbide Schottky diodes offered by various manufacturers. Schottky diodes fabricated by ST Microelectronics, GeneSiC and Rohm, were chosen for investigations. Models were implemented in SPICE. Calculations of DC characteristics as well as C-V characteristics of the investigated Schottky diodes, were performed. Evaluation of the models accuracy by means of comparison of the calculated and measured characteristics, were performed.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2015, 84; 137-144
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling
Autorzy:
Aleshkin, V.
Reggiani, L.
Rosini, M.
Powiązania:
https://bibliotekanauki.pl/articles/1179729.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
72.20.-i
72.30.+q
73.23.Ad
Opis:
The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 298-303
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recycling of Gallium from End-of-Life Light Emitting Diodes
Autorzy:
Nagy, S.
Bokányi, L.
Gombkötő, I.
Magyar, T.
Powiązania:
https://bibliotekanauki.pl/articles/356762.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
LED
LED recycling
LED chip
gallium
mechanical enrichment
mechanochemical activation
leaching
Opis:
Nowadays Light Emitting Diodes (LEDs) are widely utilized. They are applied as backlighting in Liquid Crystal Displays (LCD) and TV sets or as lighting equipments in homes, cars, instruments and street-lightning. End of life equipments are containing more and more LEDs. The recovery of valuable materials – such as Ga, Au, Cu etc. – from the LEDs is essential for the creating the circular economy. First task is the development of a proper recycling technology. Most of the researchers propose fully chemical or thermal-chemical pathway for the recycling of LEDs. In the meantime our approach based on the thorough investigation of the structure and composition of LEDs, and shown in this paper, is the combination of mechanical and chemical techniques in order to recover more valuable products, as well as to facilitate the mass transfer. Our laboratory scale experiments are introduced, the final aim of which is Ga recovery in accordance with our above approach. It was experimentally proved that the LED chips contain Ga and can be recovered by mechanical processes along with copper-product. Ga is presented on the surface of the chips in GaN form. Mechano-chemical activation in high energy density stirred medium mill and the following acidic leaching resulted in the enrichment of 99.52% of gallium in the pregnant solution.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 2B; 1161-1166
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fast Chaos with Slow p-n Junction Diodes
Autorzy:
Mykolaitis, G.
Tamaševičiūtė, E.
Miškinis, R.
Bumelienė, S.
Tamaševičius, A.
Powiązania:
https://bibliotekanauki.pl/articles/1813384.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.Ac
05.45.Pq
05.45.Gg
85.30.Kk
Opis:
We demonstrate both experimentally and numerically that slow recovery p -n junction diodes can be exploited to generate chaos at high megahertz frequencies. An extremely simple resonator consisting of an inductor in parallel with a diode when externally periodically driven exhibits chaotic response.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 971-974
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature and Composition Dependence of Photovoltaic Spectra of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se Diodes
Autorzy:
Khoi, Le Van
Szczerbakow, A.
Karczewski, G.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1886570.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
Opis:
Photovoltaic spectra of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se homojunctions have been measured in the infrared spectral region within the temperature range 15-300 K. The junctions have been formed by cadmium diffusion into the p-type Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se crystals with manganese content 0 ≤ x ≤ 0.08. From the positions of the photovoltaic maxima the energy band gap of the diode material has been determined. A phenomenological expression describing the energy band gap of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se as a function of temperature and crystal composition has been proposed. In diodes containing high manganese content x = 0.06 and x = 0.08 a second photovoltaic maximum caused by indirect optical transitions between the main conduction band and the secondary valence band located along the $\Sigma$-axis of the Brillouin zone has been observed.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 287-290
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ograniczenie prądu zwarciowego przez szeregowe dławiki z układem diodowym
Limitation on short current by serial reactors with circuit of diodes
Autorzy:
Baszyński, M.
Powiązania:
https://bibliotekanauki.pl/articles/320373.pdf
Data publikacji:
2005
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
prąd zwarcia
dławik
dioda
short current
reactor
diode
Opis:
W artykule omówiono dwa sposoby ograniczenia prądu zwarcia: pierwszy, klasyczny, realizowany przez zwiększenie impedancji obwodu (włączenie w szereg z odbiornikiem dławika) oraz drugi, wykorzystujący prosty układ energoelektroniczny. Ponadto w artykule opisano negatywne oddziaływanie obu metod na system energetyczny.
This paper presents two methods of limitation of values of short currents. The first method is achieved by increasing inductance, caused by serial connection of the additional reactor to load. This method is not recommended because of drop of other loads voltage. The second method uses a simple power electronics circuit composed of two diodes and two reactors. A comparison of efficiency and a negative influence of both methods on supply network is discussed.
Źródło:
Elektrotechnika i Elektronika; 2005, 24, 2; 119-124
1640-7202
Pojawia się w:
Elektrotechnika i Elektronika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes
Autorzy:
Dyba, P.
Płaczek-Popko, E.
Zielony, E.
Gumienny, Z.
Szatkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791359.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
85.30.De
84.37.+q
Opis:
Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy $E_2$ = 0.33 eV and capture cross-section σ_2 = 3 × $10^{-15} cm^2$ has been assigned to the gallium related DX center present in the CdTe material.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 944-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Surface Modification of GaN Films for High Efficient Light Emitting Diodes
Autorzy:
Wu, G.
Lin, Y.
Tu, K.
Powiązania:
https://bibliotekanauki.pl/articles/1400460.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
41.75.Ak
81.65.-b
42.70.Qs
77.84.Bw
Opis:
Focused gallium (Ga) ion beam technology has been proposed to modify the surface of GaN thin films. Due to the significant advancement in nitride semiconductors, the solid-state light emitting diodes will gradually replace fluorescent lamps in the next decade. However, further improvements in light extraction and power efficiency are still highly desired. GaN is limited by its high refractive index, with low light escape cone angle at about 24.6°. The external quantum efficiency is low due to the unwanted reflection and absorption. As the patterning technology scales down to the nanometer level, photonic crystal lattice in the visible light wavelength range can be achieved. Therefore, we improved the external efficiency by the new design of hexagonal photonic crystal lattice with air hole arrays in the diameter of 150 nm and the depth of 120 nm. The Ga beam was accelerated at 30 kV and the ion current was 100 pA. The plane wave expansion method along with the finite difference time domain was useful to investigate the quantum confinement. The nanopatterning by the focused ion beam could save time and processing step. In addition, we have successfully prepared blue InGaN/GaN samples with hexagonal period of 200 nm. The device micro-photoluminescence results have demonstrated that the peak illumination intensity was improved by 30%.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 884-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes
Autorzy:
Hajdel, Mateusz
Muzioł, Grzegorz
Nowakowski-Szkudlarek, Krzesimir
Siekacz, Marcin
Wolny, Paweł
Skierbiszewski, Czesław
Powiązania:
https://bibliotekanauki.pl/articles/173219.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
InGaN
laser diode
waveguide
injection efficiency
Opis:
The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.
Źródło:
Optica Applicata; 2020, 50, 2; 311-321
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Long-Time Delay in Lasing in Homo- and Heteroepitaxially Grown II-VI Laser Diodes
Autorzy:
Isemann, A.
Behringer, M.
Wenisch, H.
Fehrer, M.
Ohkawa, K.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1969096.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
Opis:
Gain guided laser diodes exhibit unexpected low threshold current densities. Under these conditions, lasing only occurs under a current dependent long-time delay, which is three orders of magnitude larger than the time needed to reach population inversion. This effect is attributed to a thermally induced index guiding. The change in temperature of the quantum well region can be estimated using the shift in the wavelength of emission to be up to 70 K. As a further consequence, the threshold current density can be reduced by a factor of 4 simply by changing the pulse width of the applied current.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 355-358
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Adaptacyjny układ sterowania LED-ów i diod laserowych
An adaptive control system of lEDs and laser diodes
Autorzy:
Gilewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/158747.pdf
Data publikacji:
2012
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Tematy:
sterownik LED
zasilanie diody laserowej
FPGA
LED driver
laser diode supply
FPGAs
Opis:
W artykule przedstawiono koncepcję architektury wielokanałowego układu sterującego zestawem LED-ów i diod laserowych. Zawarto w niej schemat ogólny całego systemu oraz schematy szczegółowe modułów składowych. Są to opracowania własne autora oraz implementacje istniejących sterowników. W szczególności jest to rozwinięcie koncepcji zaproponowanej w projekcie MniSzWiN N518 284340. W niniejszej pracy scharakteryzowano również warunki temperaturowe oraz możliwość współpracy z mikrokomputerem. Sposób sterowania systemu przedstawiono w odrębnej publikacji "Algorytmy sterujące stałoprądowym zasilaniem LED-ów i diod laserowych".
The paper describes the multichannel control system of a set of laser diodes and LEDs. It includes a diagram of the system and component drawings. They are their own solutions and modifications to existing drivers. Also developed the concept of the grant No. MniSzWiN N518 284340. Thermal conditions are also discussed, and the ability to connect a computer. System control method can be found in the "DC power control algorithms of leds and laser diodes" publication.
Źródło:
Prace Instytutu Elektrotechniki; 2012, 260; 121-128
0032-6216
Pojawia się w:
Prace Instytutu Elektrotechniki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Edge termination design for 1.7 kV silicon carbide p-i-n diodes
Autorzy:
Taube, A.
Sochacki, M.
Powiązania:
https://bibliotekanauki.pl/articles/199922.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
edge termination
silicon carbide
4H-SiC
p-i-n diode
breakdown voltage
JTE
Opis:
In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7 kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of the areas of the double-zone JTE (space-modulated JTE). The influence of geometry and the level of p-type doping in the JTE area as well as the charge as the interface between the p-type JTE area and the passivation layer on the diode breakdown voltage was studied. The effect of statistical dispersion of drift layer parameters (thickness, doping level) on diodes breakdown voltage with various JTE structures was investigated as well. The obtained results showed that the breakdown volatge values for a diode with single zone JTE are very sensitive both to the dose of JTE area and charge accumulated at the JTE/dielectric interface. The use of a double zone or space-modulated JTE structures allows for obtaining breakdown voltage above 1.7 kV for a much wider range of doping parameters and with better tolerance to positive charge at the JTE/dielectric interface, as well as better tolerance to statistical dispersion of active layer parameters compared to a single zone JTE structure.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 2; 367-375
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wyniki badań subiektywnych oddawania barw lamp z diodami świecącymi
Subjective research of colour rendering lamps with light emitting diodes
Autorzy:
Taisner, M.
Michałowska, N.
Wandachowicz, K.
Powiązania:
https://bibliotekanauki.pl/articles/376519.pdf
Data publikacji:
2017
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
wskaźnik oddawania barw
diody świecące
badania subiektywne
Opis:
W artykule opisano wyniki badań laboratoryjnych, które polegały na obserwacji próbek barwnych oświetlanych lampami stosowanymi zazwyczaj we wnętrzach mieszkalnych oraz pomieszczeniach biurowych. Celem badań była subiektywna ocena oddawania barw lamp diodowych w porównaniu z oddawaniem barw występującym przy zastosowaniu żarówek i świetlówek. Wyniki badań przeprowadzone na grupie 10 obserwatorów porównano z wartościami wskaźników oddawania barw ocenianych lamp. Przedstawiono sposób projektowania stanowiska badawczego oraz kryterium doboru próbek barwnych i źródeł światła.
The article describes the results of laboratory tests. The research involves the observation of colourful samples illuminated with lamps used in lighting design. The aim of the study was the subjective evaluation and comparison of the colour rendering by LED lamps, light bulbs and fluorescent lamps. The results for the group of 10 observers were compared with the values of the colour rendering indexes (CRI) of tested lamps. The design of the laboratory position was presented, including technical conditions and criteria for the selection of colourful samples and light sources.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2017, 92; 123-131
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rezystancja termiczna diod led a wiarygodność danych katalogowych
Thermal Resistance of Cheap Led Diodes and Precision of Catalogue Data
Autorzy:
Wesołowski, M.
Skrzypczak, P.
Hauser, J.
Powiązania:
https://bibliotekanauki.pl/articles/159174.pdf
Data publikacji:
2016
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Tematy:
diody LED
rezystancja termiczna
LED
thermal resistance
Opis:
Współczesne diody LED charakteryzują się imponującymi parametrami eksploatacyjnymi, zarówno w odniesieniu do generowanych strumieni świetlnych, jak i sprawności przetwarzania energii elektrycznej. Jednak w wielu przypadkach, parametry podawane w notach aplikacyjnych, nie są możliwe do osiągnięcia. Fakt ten wynika z prezentacji tych danych w warunkach cieplnych nie występujących podczas normalnej eksploatacji. W niniejszym artykule analizie poddano problematykę skutecznego odprowadzania ciepła z złącz p-n, do obudów diod. Intensywność tego procesu zależna jest od tzw. rezystancji termicznej, będącej jednym z istotnych parametrów podawanych w notach katalogowych. Z uwagi na znaczną liczbę awarii, zwłaszcza tanich diod LED, podjęto próbę oceny rzeczywistych wartości rezystancji termicznych tych elementów oraz porównanie ich z wartościami podawanymi w katalogach.
Today’s LEDs are characterized by high exploitation parameters. Both light intensities and efficiencies are the highest in the comparison to other light sources. However, in many cases, parameters given in application notes are impossible to reach. In the article, some aspects of thermal energy dissipation from p-n junctions were discussed. Some methods for the measurements of the thermal resistance of LED junctions were presented. The measurement results were compared to application data.
Źródło:
Prace Instytutu Elektrotechniki; 2016, 272; 6-20
0032-6216
Pojawia się w:
Prace Instytutu Elektrotechniki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stability of Diodes with Poly(3-hexylthiophene) and Polyazomethines Thin Organic Layer
Autorzy:
Bednarski, H.
Gąsiorowski, J.
Domański, M.
Hajduk, B.
Jurusik, J.
Jarząbek, B.
Weszka, J.
Powiązania:
https://bibliotekanauki.pl/articles/1409596.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
Herein we report results of studies on stability of diodes based on organic semiconductors such as poly (3-hexylthiophene) (P3HT) and soluble derivative of polyazomethine poly(1,4-(2,5-bisoctyloxy phenylenemethylidynenitrilo)-1,4-phenylenenitrilomethylidyne), (BOO-PPI). Both polymers were deposited on glass/ITO substrate with or without covering with blocking layer: poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) and finished with Al back electrode. Prepared devices were studied by monitoring their electrical conductivity under nitrogen atmosphere and ambient air conditions. Under nitrogen atmosphere a marked influence of presence of the blocking layer on the diodes electrical conductivity was revealed. The P3HT diodes prepared without PEDOT:PSS thin film shown quick degradation, whereas presence of these layers stabilizes electrical conductivity in these devices. Inversely, the PPI based diodes without the PEDOT:PSS revealed stable conducting properties, while corresponding diodes with PEDOT:PSS layer showed degradation traces of their conducting properties.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1083-1086
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Power sharing system with use of DC-DC converter and intermediate circuit of VSI inverter
Autorzy:
Kozak, Maciej
Gordon, Radosław
Zarębski, Andrzej
Powiązania:
https://bibliotekanauki.pl/articles/376476.pdf
Data publikacji:
2020
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
energy storage systems
synchronous generator
dual active bridge
DC grid
auctioneering diodes
Opis:
The article describes issues related to power distribution between a power plant system consisting of a synchronous generator operating at variable shaft speed and a super capacitor which is a short-term source of electricity for sudden electrical load changes. In the presented system a generator and a battery of supercapacitors were connected with use of power electronic converters. The synchronous generator is connected to the DC network via an AC-DC converter and the super capacitor is connected with means of an isolated DC-DC converter. Both converters have been equipped with auctioneering diodes to prevent the flow of equalizing currents. The theoretical basis and results of experimental research obtained on a laboratory test-stand equipped with the aforementioned system are presented.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2020, 103; 69-84
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of Schottky contacts for admittance and impurity profiling measurements
Autorzy:
Sikorski, S.
Jung, W.
Powiązania:
https://bibliotekanauki.pl/articles/378443.pdf
Data publikacji:
2007
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Tematy:
diody Schottky'ego
modelowanie
detektory z barierą Schottky'ego
przyrządy półprzewodnikowe
Schottky diodes
modelling
Schottky barrier photodiodes
semiconductor devices
Opis:
The paper presents a theory of a metal-semiconductor contact biased by dc voltage with superimposed small ac signal. Theoretical considerations based on general transport equations enabled to derive equations useful for admittance and impurity profiling measurements of materials properties.
Źródło:
Electron Technology : Internet Journal; 2007, 39, 5; 1-5
1897-2381
Pojawia się w:
Electron Technology : Internet Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Germanate glasses co-doped with Ce3+/Ln3+ (Ln = Pr, Tb, Dy) for white light emitting diodes
Autorzy:
Górny, Agata
Sołtys, Marta
Pisarska, Joanna
Pisarski, Wojciech A.
Powiązania:
https://bibliotekanauki.pl/articles/173993.pdf
Data publikacji:
2019
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
glasses
rare earth ions
white luminescence
Opis:
Glasses doped with lanthanides ions may be good white light emitters due to their interesting physical and spectroscopic properties. In this paper, the optical spectroscopy of rare earths doped glasses with a special emphasis on application as white LED were presented. The luminescent glass materials containing Ln3+ (Ln = Pr, Tb, Dy) and Ce3+ ions were obtained. The glasses samples were prepared by a traditional melt-quenching technique. The optical properties of glasses containing various concentrations of rare earth ions were analyzed. It was observed that luminescence bands corresponding to characteristic transitions of Ln3+ and cerium ions are present on spectra measured under direct excitation of Ce3+. Therefore, it indicates that the energy transfer process between Ce3+ /Pr3+, Ce3+ /Tb3+, Ce3+ / Dy3+ ions in glasses occurs. Some parameters such as correlated color temperature (CCT) and chromaticity coordinates (CIE) that characterize white LEDs were analyzed and discussed in detail.
Źródło:
Optica Applicata; 2019, 49, 3; 383-391
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Pressure and Temperature on AlGaInP and AlGaAs Laser Diodes
Autorzy:
Adamiec, P.
Świetlik, T.
Bohdan, R.
Bercha, A.
Dybała, F.
Trzeciakowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036026.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
42.60.-v
78.45.+h
Opis:
InGaP/AlGaInP lasers (emitting from 630 to 690 nm) and GaAs/AlGaAs lasers (emitting at 780 nm) were studied under hydrostatic pressure up to 20 kbar and at temperatures from 240 to 300 K. The electrical characteristics, the power-current dependencies and the emission spectra were measured. The emission spectra shifted in agreement with the pressure/temperature variation of the band gaps in active layers of the laser. Since at high pressure theΓ-X separation in the conduction band is strongly reduced (both in AlGaInP and AlGaAs), the dominant loss mechanism of the lasers is the electron leakage to X minima in the p-claddings. This, in turn, leads to high sensitivity of threshold currents to temperature. The dependence of threshold currents on pressure and on temperature is in good agreement with the simple theoretical analysis taking into account the carrier leakage and the radiative and nonradiative recombination. Better agreement between the theory and the experiment is obtained assuming drift rather than diffusion leakage. This indicates that threshold currents could be further reduced if the p-doping is improved in the claddings.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 585-593
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics
Autorzy:
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/2043710.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.35.Be
42.60.By
73.21.Cd
Opis:
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE is presented. This technology is ammonia free and nitrogen for growth is activated in RF plasma source from nitrogen molecules. The new growth mechanism - adlayer enhanced lateral diffusion of adatoms on semiconductor surface is studied in plasma assisted MBE. This mechanism enables us to achieve high quality step-flow epitaxy at temperatures 600-750ºC, much lower than expected from classical estimates based on the melting point of GaN. We show that growth at low temperatures in metal rich (gallium or indium) regime, together with use of low dislocation bulk GaN substrates, results in high quality of (In, Al, Ga)N layers and sharp interfaces. We demonstrate record high mobility of two-dimensional electron gas at GaN/AlGaN interface (with mobility exceeding 100 000 cm$\text{}^{2}$/(V s) at 4.2 K and 2500 cm$\text{}^{2}$/(V s) at 300 K) and report on first blue-violet InGaN multiquantum well laser diodes, operating in 407-422 nm wavelengths range. In this paper, we discuss also properties of strain compensated InAlN/InGaN multiquantum wells grown by plasma assisted MBE which are very attractive for telecommunication applications at 1.5μm wavelengths like electro-optical modulators or all-optical switches.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 635-651
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calibration of temperature-sensitive parameter for Silicon Carbide SBD’S
Autorzy:
Kraśniewski, J.
Janke, W.
Powiązania:
https://bibliotekanauki.pl/articles/118388.pdf
Data publikacji:
2016
Wydawca:
Politechnika Koszalińska. Wydawnictwo Uczelniane
Tematy:
temperature-sensitive parameter calibration curves
Silicon Carbide Schottky Barrier diodes
krzywa kalibracyjna parametru termoczułego
dioda Schottky z węglika krzemu
Opis:
Thermal properties of semiconductor device may be characterized by thermal parameters or characteristics such as thermal resistance and thermal impedance. In order to calculate the thermal resistance or thermal impedance one must have a calibration curve of temperature-sensitive parameter of the device (e.g. the voltage drop across a junction). For the obtaining the calibration curve by measurement, the temperature chamber has to be used. Another possibility is to predict this curve theoretically from analytical equations or by simulations (e.g. PSPICE). In the paper, the simulation and theoretical predictions of temperature-sensitive parameter calibration curves are compared with the results of measurement for SiC devices with metal-semiconductor junction.
Właściwości termiczne elementów półprzewodnikowych można charakteryzować poprzez parametry lub charakterystyki termiczne, takie jak rezystancja i impedancja termiczna. W celu wyznaczenia rezystancji lub impedancji termicznej elementu półprzewodnikowego musimy posiadać krzywą kalibracji parametru termoczułego (np. spadek napięcia na złączu). Dla uzyskania pomiarowej krzywej kalibracyjnej należy wykorzystać komorę temperaturową. Inną możliwością jest teoretyczne przewidywanie ww. krzywej z równań analitycznych lub symulacji (np. PSPICE). W niniejszej pracy porównano krzywe kalibracyjne parametru termoczułego otrzymane na drodze symulacji i teoretycznych obliczeń z wynikami pomiarów dla urządzeń SiC o złącze m-s.
Źródło:
Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej; 2016, 9; 77-83
1897-7421
Pojawia się w:
Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Ultrafast Schottky Diodes to High Megahertz Chaotic Oscillators
Autorzy:
Mykolaitis, G.
Tamaševičius, A.
Bumelienė, S.
Namajūnas, A.
Pyragas, K.
Pyragas, V.
Powiązania:
https://bibliotekanauki.pl/articles/1179720.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.Ac
05.45.Pq
05.45.-a
47.52.+j
Opis:
The considered chaotic oscillator consists of an amplifier, 2nd order LC resonator, Schottky diode and an extra capacitor in parallel to the diode. The diode plays the role of a nonlinear device. Chaotic oscillations are demonstrated numerically and experimentally at low as well as at high megahertz frequencies, up to 250 MHz.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 365-368
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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