Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes

Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy $E_2$ = 0.33 eV and capture cross-section σ_2 = 3 × $10^{-15} cm^2$ has been assigned to the gallium related DX center present in the CdTe material.