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Tytuł:
Hall Effect in $GdB_{6}$
Autorzy:
Anisimov, M.
Bogach, A.
Glushkov, V.
Demishev, S.
Samarin, N.
Shitsevalova, N.
Levchenko, A.
Filippov, V.
Kuznetsov, A.
Flachbart, K.
Sluchanko, N.
Powiązania:
https://bibliotekanauki.pl/articles/1371548.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Gd
Opis:
The Hall effect of $GdB_{6}$ has been studied on high quality single crystals in the temperature range 2-150 K and in magnetic field of 1 T. The obtained data allow to detect anomalies in the antiferromagnetic (AF) phase including (i) a drastic enhancement of negative Hall coefficient below $T_{N1}$ ≈ 15.5 K and (ii) the appearance of an anomalous Hall effect at $T_{N2}$ ≈ 4.7 K. Possible scenarios of the AF ground state formation are discussed.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 348-349
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hall Effect in ZnO Extrinsic Structure
Autorzy:
Dolník, B.
Kurimský, J.
Marton, K.
Kolcun, M.
Tomčo, L.
Briančin, J.
Fabián, M.
Halama, M.
Vojtko, M.
Rajňák, M.
Powiązania:
https://bibliotekanauki.pl/articles/1200027.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Dq
72.20.My
84.32.Ff
84.37.+q
81.05.Xj
72.80.Ng
Opis:
Zinc oxide-based extrinsic composite was investigated. The sample was selected from a series of components of one production batch, prepared by standard sintering technology. The content of extrinsic elements in ZnO base was determined by SEM. Van der Pauw method with four-point electrode fixture was used for study of conducting phenomena in square-shaped sample. It is normaly preferred to assume the symmetric uniformity of the electrical properties of sample, for which sheet resistance, bulk resistivity and Hall mobility, sheet carrier density and carrier concentration can be calculated. When the uniformity of measured parameters is breached, the anisotropy in the arrangement of the internal structure may be the cause. There remains the question of whether the extrinsic ZnO material can be isotropic, regarding the electrical conductivity. Although the Hall effect has been measured, preliminary measurements indicate the presence of anisotropy in the measured samples. Before measurement the following phenomena should be taken into account: magneto-electric effect, photo-electric effect and the isothermal condition should be preserved. Paper discusses the uniformity deviations for the defined setup configurations for positive and negative magnetic field directions. Bulk resistivity has been calculated by numerical solution of van der Pauw equation. Large offset voltage during the measurement is discussed.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 76-77
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Breakdown of the Quantum Hall Effect
Autorzy:
Maude, D. K.
Rigal, L. B.
Desrat, W.
Potemski, M.
Portal, J. C.
Eaves, L.
Wasilewski, Z. R.
Toropov, A. I.
Hill, G.
Powiązania:
https://bibliotekanauki.pl/articles/2027467.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Pm
74.25.Dw
Opis:
The breakdown of the dissipationless conductance in the integer and fractional quantum Hall effect regime is reviewed. The temperature dependence of the critical current and of the critical magnetic field at breakdown bears a striking resemblance to the phase diagram of the phenomenological two-fluid Gorter-Casimir model for superconductivity. In addition, a remarkably simple scaling law exists between different filling factors.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 213-226
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in IV-VI Semiconductors
Autorzy:
Dyrdał, A.
Dugaev, V.
Barnaś, J.
Brodowska, B.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1810533.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
75.50.Pp
72.25.Dc
Opis:
We consider theoretically the topological contribution to the anomalous Hall effect in narrow-gap IV-VI magnetic semiconductors in which the relativistic terms are relatively large and determine both the non-parabolicity of the energy spectrum and strong spin-orbit interaction. We use the relativistic Dirac model and linear response theory to calculate this contribution. Experimental data on the anomalous Hall effect in these compounds are also presented and discussed.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 287-289
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal stability of the krypton Hall effect thruster
Autorzy:
Szelecka, A.
Kurzyna, J.
Bourdain, L.
Powiązania:
https://bibliotekanauki.pl/articles/148243.pdf
Data publikacji:
2017
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
thermal stability
electric propulsion
Hall thruster
xenon
krypton propellants
Opis:
The Krypton Large IMpulse Thruster (KLIMT) ESA/PECS project, which has been implemented in the Institute of Plasma Physics and Laser Microfusion (IPPLM) and now is approaching its final phase, was aimed at incremental development of a ~500 W class Hall effect thruster (HET). Xenon, predominantly used as a propellant in the state-of-the-art HETs, is extremely expensive. Krypton has been considered as a cheaper alternative since more than fifteen years; however, to the best knowledge of the authors, there has not been a HET model especially designed for this noble gas. To address this issue, KLIMT has been geared towards operation primarily with krypton. During the project, three subsequent prototype versions of the thruster were designed, manufactured and tested, aimed at gradual improvement of each next exemplar. In the current paper, the heat loads in new engine have been discussed. It has been shown that thermal equilibrium of the thruster is gained within the safety limits of the materials used. Extensive testing with both gases was performed to compare KLIMT’s thermal behaviour when supplied with krypton and xenon propellants.
Źródło:
Nukleonika; 2017, 62, 1; 9-15
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composite Fermions and the Fractional Quantum Hall Effect
Autorzy:
Wójs, A.
Quinn, J. J.
Powiązania:
https://bibliotekanauki.pl/articles/2011133.pdf
Data publikacji:
1999-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Pm
73.20.Dx
73.40.Hm
Opis:
The mean field composite fermion picture successfully predicts low lying states of fractional quantum Hall systems. This success cannot be attributed to a cancellation between the Coulomb and Chern-Simons interactions beyond the mean field and solely depends on the short-range of the Coulomb pseudopotential in the lowest Landau level. The class of pseudopotentials for which the mean field composite fermion picture can be applied is defined. The success or failure of the mean field composite fermion picture in various systems (electrons in excited Landau levels, Laughlin quasiparticles, charged magnetoexcitons) is explained.
Źródło:
Acta Physica Polonica A; 1999, 96, 5; 593-602
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature error of Hall-effect and magnetoresistive commercial magnetometers
Autorzy:
Nowicki, M.
Kachniarz, M.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/141287.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
magnetic field measurement
magnetometers
Hall-effect
magnetoresistive
temperature error
Opis:
The paper presents a special measurement system for investigation of temperature influence on the indication of commercially available sensors of the magnetic field. Utilizing the developed system, several magnetoresistive and Hall-effect sensors were investigated within the temperature range from –30°C to 70°C. The obtained results indicate that sensitivity of most of the investigated sensors is unaffected, except the basic magnetoresistive device. However, Hall-effect sensors exhibit considerable temperature drift, regardless of the manufacturer.
Źródło:
Archives of Electrical Engineering; 2017, 66, 3; 625-630
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hall effect sensors performance investigation using three-dimensional simulations
Autorzy:
Paun, M.-A.
Sallese, J.-M.
Kayal, M.
Powiązania:
https://bibliotekanauki.pl/articles/398136.pdf
Data publikacji:
2011
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
hallotron
wygładzanie numeryczne
symulacja fizyczna
symulacja 3D
hall effect sensor
numerical offset
numerical drift
3D physical simulations
Opis:
Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the Hall cell optimum fabrication process, shape and dimensions in terms of the performances envisaged to be achieved.
Źródło:
International Journal of Microelectronics and Computer Science; 2011, 2, 4; 140-145
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Behavior of the Hall Effect in III-V Heterostructures
Autorzy:
Dziuba, Z.
Górska, M.
Marczewski, J.
Przesławski, T.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2012953.pdf
Data publikacji:
2000-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Lk
72.80.Ey
Opis:
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
Źródło:
Acta Physica Polonica A; 2000, 97, 2; 331-336
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
Autorzy:
Wesela, W.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Sadowski, J.
Terki, F.
Charar, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047701.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
85.75.-d
Opis:
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Spin Hall Effect in Strained (111)-Oriented SnSe Layers
Autorzy:
Safaei, S.
Galicka, M.
Kacman, P.
Buczko, R.
Powiązania:
https://bibliotekanauki.pl/articles/1398549.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.jd
71.20.-b
73.20.-r
Opis:
Recently, the quantum spin Hall effect has been predicted in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. It was shown that in these films the energy gaps in the two-dimensional band spectrum depend in an oscillat ory fashion on the layer thickness - the calculated topological invariant indexes and edge state spin polarizations show that for films 20-40 monolayers thick a two-dimensional topological insulator phase appears. Edge states with the Dirac cones with opposite spin polarization in their two branches are obtained for both materials. However, for all but the (111)-oriented SnTe films with an even number of monolayers an overlapping of bands in Γ̅ and M̅ diminishes the final band gap and the edge states appear either against the background of the bands or within a very small energy gap. Here we show that this problem in SnSe films can be removed by applying an appropriate strain. This should enable observation of the quantum spin Hall effect also in SnSe layers.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-150-A-152
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Novel Method of Offset Voltage Minimization in Hall-Effect Sensor
Autorzy:
Petruk, O.
Kachniarz, M.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032752.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
02.70.Dh
Opis:
The paper presents numerical model and validation of new methodology of offset voltage minimization in the Hall-effect sensors. Model of the Hall-effect sensor with multiple electric pins was developed. Mathematical equations used for calculation of electric potential difference were formulated. Simulations were carried out using finite elements method in ELMER FEM software. Performed investigation of actual parameters of newly designed Hall-effect sensor confirms effectiveness of the described method.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1177-1179
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors
Autorzy:
Kachniarz, M.
Petruk, O.
Salach, J.
Ciuk, T.
Strupiński, W.
Bieńkowski, A.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1030244.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
81.05.ue
73.22.Pr
72.80.Vp
Opis:
The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1250-1253
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Spin Hall Effect in k-Cubed Rashba Model
Autorzy:
Krzyżewska, A.
Dyrdał, A.
Berakdar, J.
Powiązania:
https://bibliotekanauki.pl/articles/1030432.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Tj
72.25.-b
72.25.Mk
73.40.-c
Opis:
Within the Matsubara Green function formalism and linear response theory we considered theoretically the temperature dependences of the spin Hall effect for a two-dimensional gas with an isotropic k-cubed form of the Rashba interaction. We utilize a standard model for treating spin-orbit phenomena in p-doped semiconductor heterostructures and also for an electron gas formed at perovskite oxides interfaces.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 558-560
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Semiconductor contact layer characterization in a context of hall effect measurements
Autorzy:
Kowalewski, Andrzej
Wróbel, Jarosław
Boguski, Jacek
Gorczyca, Kinga
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/220890.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
metal contact
contact layer
contact resistance
Hall effect
resistivity
van der Pauw method
MSM structure
semiconductors’ characterization
Opis:
A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (Rd) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.
Źródło:
Metrology and Measurement Systems; 2019, 26, 1; 109-114
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jack Polynomials and Fractional Quantum Hall Effect at ν = 1/3
Autorzy:
Kuśmierz, B.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/1398638.pdf
Data publikacji:
2016-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.-f
71.10.Pm
Opis:
We investigate properties of strongly correlated, spinless electrons confined within given Landau level at filling factor ν = 1/3. Our analysis is based on the formalism of the Jack polynomials. Selected Jack polynomial wave functions are compared with ground states of the Coulomb interaction Hamiltonians, in different materials and the Landau levels, obtained by exact diagonalization. We show that certain Jack wave functions can be used as a description of fractional quantum Hall states.
Źródło:
Acta Physica Polonica A; 2016, 130, 2; 607-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hall effect on thermal instability of viscoelastic dusty fluid in porous medium
Autorzy:
Singh, M.
Gupta, R. K.
Powiązania:
https://bibliotekanauki.pl/articles/265280.pdf
Data publikacji:
2013
Wydawca:
Uniwersytet Zielonogórski. Oficyna Wydawnicza
Tematy:
niestabilność termiczna
płyn lepkosprężysty
porowatość
thermal instability
Rivlin-Ericksen viscoelastic fluid
suspended particles
Hall current effect
porous medium
Opis:
The effect of Hall currents and suspended dusty particles on the hydromagnetic stability of a compressible, electrically conducting Rivlin-Ericksen elastico viscous fluid in a porous medium is considered. Following the linearized stability theory and normal mode analysis the dispersion relation is obtained. For the case of stationary convection, Hall currents and suspended particles are found to have destabilizing effects whereas compressibility and magnetic field have stabilizing effects on the system. The medium permeability, however, has stabilizing and destabilizing effects on thermal instability in contrast to its destabilizing effect in the absence of the magnetic field. The critical Rayleigh numbers and the wave numbers of the associated disturbances for the onset of instability as stationary convection are obtained and the behavior of various parameters on critical thermal Rayleigh numbers are depicted graphically. The magnetic field, Hall currents and viscoelasticity parameter are found to introduce oscillatory modes in the systems, which did not exist in the absence of these parameters.
Źródło:
International Journal of Applied Mechanics and Engineering; 2013, 18, 3; 871-886
1734-4492
2353-9003
Pojawia się w:
International Journal of Applied Mechanics and Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of quantum magnetotransport in In₀.₅₃Ga₀.₄₇As/In₀.₅₂Al₀.₄₈As heterostructures grown on (100) InP
Autorzy:
Przesławski, T.
Powiązania:
https://bibliotekanauki.pl/articles/378451.pdf
Data publikacji:
2007
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Tematy:
magnetotransport
efekt Halla
hel
Hall effect
helium
Opis:
Magnetotransport properties of the Si δ- doped In₀.₅₃Ga₀.₄₇As/In₀.₅₂Al₀.₄₈As heterostructures grown on (100)InP substrates were investigated by performing classical Van der Pauw Hall effect as well as high field quantum magnetotransport measurements. The results of the conventional Hall measurements are ambiguous because the mobility obtained at liquid helium occurred to be smaller than at room temperature. The qualitative analysis of the conductivity tensor revealed at least two conducting channels. Thus, the properties of whole structure are limited by the low mobility of the parasitic parallel conduction layer. On the other hand, the fast Fourier transform of the quantum magnetooscillations consists of a lot of frequencies. None of them can not be attributed to the presence of the two-dimensional electron gas (2DEG) in a single quantum well. We interpret our rich Fourier spectrum as due to quantum interference (QI) between open electron path commonly found in superlattices structures.
Źródło:
Electron Technology : Internet Journal; 2007, 39, 2; 1-3
1897-2381
Pojawia się w:
Electron Technology : Internet Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Kondensator wzorcowy 10 nF z dielektrykiem ceramicznym
10 nF reference capacitor with a ceramic dielectric
Autorzy:
Koszarny, Maciej
Jursza, Jolanta
Szutkowski, Jerzy
Jasiński, Robert
Szterk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/952615.pdf
Data publikacji:
2018
Wydawca:
Główny Urząd Miar
Tematy:
kondensator
wzorcowanie
efekt Halla
capacitor
calibration
Hall effect
Opis:
W ramach prac badawczo-rozwojowych, w Samodzielnym Laboratorium Elektryczności i Magnetyzmu Głównego Urzędu Miar zaprojektowano, opracowano i wykonano czterozaciskowy kondensator wzorcowy o wartości 10 nF, z dielektrykiem ceramicznym. Kondensator został umieszczony w termostacie z wbudowanym elektronicznym układem sterowania, który zapewnia bardzo precyzyjne utrzymywanie określonej temperatury. Układ sterowania może być zasilany ze stacjonarnego źródła zasilania lub z dodatkowego akumulatora. Opracowany wzorzec charakteryzuje się bardzo dobrą stabilnością wartości pojemności elektrycznej dla danej częstotliwości oraz małą wartością stratności. Wzorzec ten jest niezbędnym elementem dla transferu jednostki miary pojemności elektrycznej z kwantowego efektu Halla.
In Electricity and Magnetism Laboratory of the Central Office of Measures, a four-terminal reference capacitor 10 nF (with a ceramic dielectric) was designed, developed and made. The capacitor has been placed in a thermostat with a built-in electronic control system which can be powered from a stationary power source or from an additional battery. The developed standard is characterized by a very good stability of the capacitance value for a given frequency and a low loss value tan δ. This capacitor is a necessary element for the transfer of the unit of capacitance from the quantum Hall effect.
Źródło:
Metrologia i Probiernictwo : biuletyn Głównego Urzędu Miar; 2018, 2 (21); 50-52
2300-8806
Pojawia się w:
Metrologia i Probiernictwo : biuletyn Głównego Urzędu Miar
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransport measurements as a tool for searching 3D topological insulators
Autorzy:
Śliż, Paweł
Sankowska, Iwona
Bobko, Ewa
Szeregij, Eugeniusz
Grendysa, Jakub
Tomaka, Grzegorz
Żak, Dariusz
Płoch, Dariusz
Jasik, Agata
Powiązania:
https://bibliotekanauki.pl/articles/2052167.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
materials science
magnetotransport
topological insulators
quantum Hall effect
Opis:
The paper covers some measurement aspects of transport of electrons through metals and semiconductors in magnetic field - magnetotransport - allowing for the determination of electrical parameters characteristic of three-dimensional (3D) topological insulators (TI) (i.e. those that behave like an insulator inside their volume and have a conductive layer on their surface). A characteristic feature of the 3D TI is also a lack of differences between the chemical composition of the conductive surface and the interior of the material tested and the fact that the electron states for its surface conductivity are topologically protected. In particular, the methods of generating strong magnetic fields, obtaining low temperatures, creating electrical contacts with appropriate geometry were presented, and the measurement methods were reviewed. In addition, the results of magnetotransport measurements obtained for two volumetric samples based on the HgCdTe compound grown with the molecular beam epitaxy method are presented.
Źródło:
Metrology and Measurement Systems; 2021, 28, 4; 725-734
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Megagauss Cyclotron Resonance and Quantum Hall Effect of 2D Electron Gas in HgCdMnTe
Autorzy:
Grabecki, G.
Takeyama, S.
Dietl, T.
Takamasu, T.
Shimamotο, Y.
Miura, N.
Powiązania:
https://bibliotekanauki.pl/articles/1933749.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Hc
73.50.Fq
73.20.Dx
73.40.Lq
Opis:
Two-dimensional electron gas adjacent to a grain boundary in bicrystal of narrow-gap semiconductor p- Hg$\text{}_{0.79}$Cd$\text{}_{0.19}$Mn$\text{}_{0.02}$Te has been studied under ultra strong impulse magnetic fields (up to 140 T). Both cyclotron resonance and quantum Hall effect are measured for the same samples. The values of the resonance fields point to strong nonparabolicity. A broadening of the line is interpreted in terms of an intersubband mixing that occurs for the upper Landau level. A steep increase in the linewidth in the field range 20-30 T, which coincides with a strong decrease in the Hall resistance is assigned to the field-induced metal-insulator transition in our system.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 731-734
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Disorder on Spin and Charge Excitations in the Fractional Quantum Hall Effect
Autorzy:
Výborný, K.
Müller, Ch.
Dethlefsen, A. F.
Haug, R. J.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047400.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.-f
75.10.Jm
72.10.Fk
73.63.-b
Opis:
A simple model of disorder in fractional quantum Hall systems is combined with the standard exact diagonalisation technique. Electron-density-dependent gaps at filling factors 1/3,2/3,2/5, and 3/5 measured by activated transport can then be fitted with a single reasonable value of d which has the meaning of the separation of ionized donors from the quasi-2D electron gas.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 249-254
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Offset Drift Dependence of Hall Cells with their Designed Geometry
Autorzy:
Paun, M. A.
Sallese, J. M.
Kayal, M.
Powiązania:
https://bibliotekanauki.pl/articles/226531.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
hall effect sensor
individual and residual offset drift
temperature coefficient
Opis:
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The temperature coefficient of specific parameters such as individual, residua offset and resistance has been also investigated. Therefore the optimum cell to fit the best in the performance specifications was identified. The variety of tested shapes ensures a good analysis on how the sensors performance changes with geometry.
Źródło:
International Journal of Electronics and Telecommunications; 2013, 59, 2; 169-175
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design and analysis of MOS based Magnetic Field Sensor
Autorzy:
Kumar, Rakesh
Powiązania:
https://bibliotekanauki.pl/articles/1075557.pdf
Data publikacji:
2019
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
CMOS Technology
Hall Effect
Lorentz force
MagFET device
Magnetic sensor
Opis:
Magnetic sensors are widely used in various applications such as consumer electronic products (mobile phones, laptops), biomedical applications (brain function mapping), navigation, vehicle detection, mineral prospecting, non-contact switching (keyboard), contactless temperature measurement, wireless sensor network etc. Sensitivity of MagFET devices towards magnetic field, depends on the shape, dimensions VGS, VDS. In this paper we have measured effect of Physical design of gate on sensitivity of MagFET.
Źródło:
World Scientific News; 2019, 121; 42-47
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in $Ge_{1-x-y}Pb_{x}Mn_{y}Te$ Composite System
Autorzy:
Podgórni, A.
Kilanski, L.
Dobrowolski, W.
Górska, M.
Domukhovski, V.
Brodowska, B.
Reszka, A.
Kowalski, B.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1376191.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.J-
72.80.Ga
75.40.Mg
75.50.Pp
Opis:
The purpose of this study was to investigate the magnetotransport properties of the $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature $T_{SG}$=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×$10^{20}$ $cm^{-3}$, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, $R_{S}$ = 2.0×$10^{6}$ $m^{3}$/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ alloy.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1180-1183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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