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Wyszukujesz frazę "73.40.Mn" wg kryterium: Wszystkie pola

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Tytuł:
Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector
Autorzy:
Hackiewicz, K.
Martyniuk, P.
Rutkowski, J.
Kowalewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1032582.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Mn
73.61.Ey
78.30.Fs
85.60.Bt
85.60.Gz
Opis:
In this paper we investigate interband cascade type-II mid-wavelength infrared InAs/GaSb superlattice detector in temperature range from 200 K to 300 K. The paper is based on the theoretical calculation of dark current treated as a sum of two components: average bulk current and average leakage current, flowing through the device. The average leakage current results from a comparison of theoretically calculated bulk current and measured one. We show that it is possible to fit theoretical model to experimental data, assuming that transport in absorber is determined by the dynamics of the intrinsic carriers. Based on the fit we estimated carrier lifetime greater than 100 ns in temperature range 200-300 K.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1415-1419
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures
Autorzy:
Kalbarczyk, K.
Foltyn, M.
Grzybowski, M.
Stefanowicz, W.
Adhikari, R.
Li, Tian
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Bonanni, A.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398574.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Dc
73.40.Cg
73.43.Qt
78.55.Cr
Opis:
Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1196-1198
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
Autorzy:
Lewińska, S.
Gryglas-Borysiewicz, M.
Przybytek, J.
Baj, M.
Jouault, B.
Gennser, U.
Ouerghi, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047930.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
71.20.Nr
73.23.Hk
73.63.Hs
72.10.Di
85.30.Mn
73.40.Gk
Opis:
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 606-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Dependent Phenomena in (Ga,Mn)As Heterostructures
Autorzy:
Sankowski, P.
Kacman, P.
Powiązania:
https://bibliotekanauki.pl/articles/2046898.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
72.25.Hg
73.40.Gk
Opis:
A model for spin-dependent tunneling in semiconductor heterostructures, which combines a multi-orbital empirical tight-binding approach with a Landauer-Büttiker formalism, is presented. Using this approach we explain several phenomena observed in modulated structures of (Ga,Mn)As, i.e., large values of the electron current spin polarization in magnetic Esaki- Zener diode and the high tunneling magnetoresistance ratio. Next, the relevance of this theory to assess the tunneling anisotropic magnetoresistance effect is studied. The results of applying the tight-binding model to describe the recently observed interlayer exchange coupling in (Ga,Mn)As-based superlattices are also shown.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 139-150
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Pulsed Magnetic Field Sensor Based on La-Ca-Mn-O Thin Polycrystalline Films
Autorzy:
Balevičius, S.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Novickij, J.
Altgilbers, L. L.
Clarke, F.
Powiązania:
https://bibliotekanauki.pl/articles/2041727.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Kz
73.40.Gk
85.70.Ay
61.72.Mm
Opis:
It is demonstrated that polycrystalline La$\text{}_{0.33}$Ca$\text{}_{0.67}$MnO$\text{}_{3}$ thin film sensors can be used to measure pulsed strong magnetic fields with microsecond duration rise and decay times. The response characteristics of these sensors were investigated using 0.7-1.0 ms duration bell-shaped magnetic field pulses of 10-20 T amplitudes and by using special waveform magnetic field pulses with amplitudes of 40 T and decay times of 50μs. The response of these magnetic field sensors was compared with those of conventional loop sensors and Faraday rotation sensors using Bi$\text{}_{12}$SiO$\text{}_{20}$ single crystals as a known standard.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 207-210
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots
Autorzy:
Belyaev, A. E.
Eaves, L.
Main, P. C.
Polimeni, A.
Stoddart, S. T.
Henini, M.
Powiązania:
https://bibliotekanauki.pl/articles/1969042.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 245-249
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer
Autorzy:
Wosiński, T.
Figielski, T.
Mąkosa, A.
Wrotek, S.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1992612.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
73.50.Jt
85.30.Mn
Opis:
Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 617-621
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Search for T-Shaped Quantum Wires in CdTe/CdMg(Mn)Te System
Autorzy:
Cywiński, G.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Gębicki, W.
Powiązania:
https://bibliotekanauki.pl/articles/1969038.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Rn
73.20.Dx
85.40.Ux
Opis:
We attempted to produce and to investigate T-shaped wire structures of II-VI compounds. Our samples were grown on GaAs hybrid substrates in a two-stage growth process. The photoluminescence measurements resulted into two different possible polarization behaviors of recorder signal. We interpret one of these behaviors as due to quantum wire formation.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 277-280
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coherent and Sequential Tunneling in High Magnetic Field
Autorzy:
Belyaev, A. E.
Vitusevich, S. A.
Maude, D.
Portal, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/1968012.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 704-708
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Tunnelling Studies of Chaos in Quantised Systems
Autorzy:
Eaves, L.
Fromhold, T. M.
Wilkinson, P. P.
Sheard, F. W.
Powiązania:
https://bibliotekanauki.pl/articles/1967958.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
73.40.Gk
85.30.Mn
05.45.+b
Opis:
This paper gives a brief introductory overview of quantum chaology, with particular reference to recent experimental work involving the use of semiconductor heterostructures. In the presence of a tilted magnetic field, a double-barrier resonant-tunnelling device incorporating a quantum well produces a chaotic stadium for electron motion. The basic properties of this system are described. It is shown how resonant magnetotunnelling spectroscopy provides firm experimental evidence for the effect of scarred wave functions on a physically-measurable property, in this case the measured current-voltage characteristics of the device. The paper concludes with some speculations concerning for the development of this field.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 609-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Interface Roughness on Resonant Tunnelling in Double-Barrier Heterostructures
Autorzy:
Figielski, T.
Wosiński, T.
Mąkosa, A.
Powiązania:
https://bibliotekanauki.pl/articles/1950747.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
68.35.Ct
Opis:
We argue that the well-boundary roughness in a double-barrier heterostructure induces subsidiary subbands in the quantum well which, in turn, lead to the appearance of a broad shoulder beyond the principal resonance peak in the current-voltage characteristics.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 777-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator
Autorzy:
Figielski, T.
Wosiński, T.
Mąkosa, A.
Dobrowolski, W.
Vitusevich, S. A.
Belyaev, A. E.
Powiązania:
https://bibliotekanauki.pl/articles/1950748.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An effect of magnetic field normal to the tunnel current on the amplitude and phase of the fine oscillatory structure, discovered in the resonance current-voltage curve in double-barrier AlAs/GaAs heterostructures, has been examined. All the obtained results are consistently explained in terms of the interference of ballistic electrons, escaped from the quantum well, in the collector part of the structure.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures
Autorzy:
Belyaev, A. E.
Vitusevich, S. A.
Glavin, B. A.
Konakova, R. V.
Dobrowolski, W.
Mąkosa, A.
Kravchenko, L. N.
Gornev, E. S.
Powiązania:
https://bibliotekanauki.pl/articles/1947897.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 727-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunneling in Semiconductor Nanostructures: Physics and Devices
Autorzy:
Lüth, H.
Powiązania:
https://bibliotekanauki.pl/articles/1946763.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Gk
85.30.Mn
Opis:
Since modern semiconductor epitaxy techniques have reached the present level of perfectness, resonant tunneling through double barrier structures has attracted new interest, also with respect to novel device applications. The present review shortly discusses the underlying physical concepts of resonant tunneling through semiconductor multiple heterostructures. Beside resonant tunneling diodes also concepts for tunneling transistors are discussed. In particular, a novel 2D-2D tunnel transistor is presented, in which tunneling between two neighboring two-dimensional electron gases yields current-voltage characteristics with two types of instabilities depending on the applied gate voltage. Scaling down the lateral dimensions of a resonant tunneling diode leads to quantum boxes or dots, in which the effect of single electron tunneling with Coulomb-blockade can be observed. The underlying physics is discussed on the basis of recent experiments and theoretical calculations. Finally some possible future applications both of resonant tunneling diodes and of single electron devices are presented.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 667-679
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices
Autorzy:
Belyaev, A. E.
Vitusevich, S. A.
Glavin, B. A.
Mąkosa, A.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1933716.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
85.30.Mn
Opis:
An effect of magnetic field on a fine oscillatory structure revealed in the resonant current flowing through double-barrier resonant-tunneling devices is examined. It is found that the observed variation of the fine structure in a magnetic field parallel to the current direction differs considerably from that appearing in tunnel current flowing through single-barrier structures. Experimental results are explained in terms of the quantum interference effect arising in structures having wide spacer layers.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 675-678
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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