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Tytuł:
Damage Production in As Implanted GaAs$\text{}_{1-x}$P$\text{}_{x}$
Autorzy:
Krynicki, J.
Warchoł, S.
Rzewuski, H.
Groetzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/1932091.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
Opis:
Post-implantation damage in GaAs$\text{}_{1-x}$P$\text{}_{x}$ compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10$\text{}^{13}$ -8 × 10$\text{}^{13}$ cm$\text{}^{-2}$ at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He$\text{}^{+}$ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 249-252
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature
Autorzy:
Krynicki, J.
Rzewuski, H.
Groetzschel, R.
Claverie, A.
Powiązania:
https://bibliotekanauki.pl/articles/1886822.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.70.Tm
Opis:
Amorphization of GaAs implanted with Cd in the dose range of 2 x 10$\text{}^{13}$-1.2 x 10$\text{}^{14}$ ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 349-353
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Possibilities of Swift Heavy Ion Implantation in Material Science and Technology
Autorzy:
Słowiński, B.
Powiązania:
https://bibliotekanauki.pl/articles/2011021.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
Opis:
We summarise briefly the advantages of swift heavy ions (≈ 1 MeV/u) application to analysis and treating of solids in order to modify their properties. As an illustration some examples of this application are quoted.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implantation of Rare-Earth Atoms into Si and III-V Compounds
Autorzy:
Kozanecki, A.
Langer, J. M.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1924312.pdf
Data publikacji:
1993-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
78.55.-m
Opis:
Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
Źródło:
Acta Physica Polonica A; 1993, 83, 1; 59-70
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Ion-Matter Interaction with Swift Heavy Ions in the Light of Inelastic Thermal Spike Model
Autorzy:
Toulemonde, M.
Dufour, C.
Paumier, E.
Powiązania:
https://bibliotekanauki.pl/articles/2044665.pdf
Data publikacji:
2006-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Az
61.80.Jh
Opis:
A description of the inelastic thermal spike model is presented in order to correlate the energy deposited by swift heavy ions to the nanometric matter transformation induced in inorganic metallic and insulating materials. Knowing that insulator is more sensitive than metallic material and that amorphous material is in general more sensitive than a crystalline one, it appears evident that the electron-phonon coupling constant g plays a key role. It will be shown that in metallic material we are able to describe different phenomena with the same value of g: for example, track formation with defect annealing or sputtering of atoms. In insulators the emphasis is made on results obtained for amorphizable materials like SiO$\text{}_{2}$ quartz and for non-amorphizable ionic crystals like CaF$\text{}_{2}$. Assuming that tracks result from a transient thermal process, a quantitative development of the model is proposed using the electron-atom mean free pathλ (inversely proportional to the square root of g) as a free parameter. With this parameter it is possible to quantitatively describe track radii in a wide range of ion velocities - whatever the bonding character of the crystal is - assuming specific criteria: tracks may result from a rapid quenching of a cylinder of matter in which the energy deposited on the lattice has overcome either the energy necessary to reach a quasi-molten phase in the case of amorphizable materials or the vaporization energy in the case of non-amorphizable materials. The evolution of theλ parameter of the considered insulator decreases versus the band gap energy. In this model, velocity effect, and a link between track formation and sputtering of atoms is established for amorphizable insulators while open questions appear for ionic crystals.
Źródło:
Acta Physica Polonica A; 2006, 109, 3; 311-322
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures
Autorzy:
Krynicki, J.
Rzewuski, H.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/1924215.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.70.Tm
Opis:
Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He$\text{}^{+}$ channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 871-875
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys
Autorzy:
Anishchik, V.
Poliak, N.
Ponaryadov, V.
Opielak, M.
Boiko, O.
Powiązania:
https://bibliotekanauki.pl/articles/1033770.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
Opis:
The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 291-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Absorption Study of Ti, Cu and Fe Implanted AlN
Autorzy:
Borowski, M.
Traverse, A.
Mimault, J.
Powiązania:
https://bibliotekanauki.pl/articles/1931700.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.60.Dq
61.10.Lx
61.80.Jh
Opis:
Sintered AlN ceramics were implanted by Ti, Fe and Cu ions up to 1.9 × 10$\text{}^{17}$ atoms/cm$\text{}^{2}$ at mean energies of 70-110 keV in order to investigate the role of the chemical properties of the implanted species. on the phase formed during the implantation process. X-ray absorption studies were performed at room and at liquid nitrogen temperature to give information on the resulting systems and local environments of the Ti, Fe and Cu atoms. We observe the formation of TiN even for as-implanted samples, while the Cu ions aggregate to clusters. The Fe implanted samples show an intermediate behavior with both nitride formation and Fe clustering. In conclusion, the heat of formation is found to be a key parameter for the final system.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 713-719
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Spectra of CdTe Implanted at Room and Liquid Nitrogen Temperature
Autorzy:
Czarnecka-Such, E.
Kisiel, A.
Rodzik, A.
Gołacki, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1923759.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.70.Tm
78.20.Ci
Opis:
The fundamental reflectivity spectra of monocrystalline CdTe, implanted with Ag ions at room temperature and with Er ions at liquid nitrogen temperature, are investigated in the 0.5-6.0 eV energy range. The analysis of the obtained spectra leads to the suggestion that temperature of implantation influences the obtained results much more decisively than values of other parameters. For the implantation carried out at 300 K no significant changes in reflectivity spectra are observed regardless of magnitude of the ion dose (up to 5 × 10$\text{}^{15}$/cm$\text{}^{2}$) and this fact, in our opinion, is due to the self-annealing effect. For samples implanted at temperature 77 K with comparable doses of ions, however, the characteristic changes of shape and intensity of reflection coefficient spectra appear. The manner of this changes gives evidence that temperature 77 K is low enough to make the radiation induced lattice defects stable (frozen-in) which are responsible for the observed behaviour of CdTe fundamental reflectivity spectra.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Environment of Air-Ions in Healing Chambers in the "Wieliczka" Salt Mine
Autorzy:
Wiszniewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400509.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.90.+B
82.30.Fi
61.80.Jh
Opis:
The present paper is an attempt to determine the parameters of air-ions in salt mines. The investigations were aimed at determination of the degree of ionization of air in places where cosmic ray particles do not arrive at. Specifically, measurements were performed in healing chambers in salt mines where establishment of standards in the healing process should be considered as the necessity. Preliminary investigations were carried out in three salt mines using the Gerdien ion counter, with sensitivity approximately of $20 ions/cm^{3}$. The studies have shown that concentrations of small air-ion are in the range of 1200-4700 ions/$cm^{3}$ and remain persistently in adits and medicinal chambers of this mine. It means that the air in the "Wieliczka" Salt Mine is several times more saturated with air-ions as compared to the neutral atmosphere background. According to the existing standards, this ionization level is not only deemed acceptable but also optimal for humans. Because results of unsystematic measurements of ion concentrations performed in different Polish salt mines are quite similar, it is assumed that the results presented in this paper are of universal character, and that comparable ionization level in the all mines would be expected. Due to this fact, it was decided that only one of them "Wieliczka" Salt Mine (Poland) can be selected for further detailed research.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1661-1665
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:
Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Powiązania:
https://bibliotekanauki.pl/articles/2011007.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.10.-i
61.72.-y
Opis:
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 137-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the Defect Structure of $Hg_{1-x}Cd_{x}Te$ Films by Ion Milling
Autorzy:
Pociask, M.
Izhnin, I.
Ilyina, E.
Dvoretsky, S.
Mikhailov, N.
Sidorov, Yu.
Varavin, V.
Mynbaev, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811974.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
61.80.Jh
66.30.Lw
Opis:
A study of the defect structure of heteroepitaxially grown $Hg_{1-x}Cd_{x}Te$ (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ $10^{17} cm^{-3}$, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of $10^{15} cm^{-3}$, which is typical of high-quality MCT.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1293-1301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies
Autorzy:
Jasiński, J.
Liliental-Weber, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1950818.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.72.Cc
61.72.Ff
Opis:
2 MeV arsenic or gallium ions were used to produce nonstoichiometric buried amorphous layers in gallium arsenide. The mechanism of thermally induced regrowth of these layers was investigated using transmission electron microscopy. Low-temperature annealing resulted in nucleation of high densities of stacking faults. This was associated with the local nonstoichiometry of the amorphous layers. After annealing at high temperatures, in arsenic as well as in gallium implanted samples, two layers of voids, formed in result of vacancies clustering, were found in areas adjacent to the initial location of the amorphous-crystalline interfaces. A qualitative model of the formation of such layers was proposed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 825-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Range and Evolution in Swift Xe-Ion Irradiated Pure Silver Studied by Positron Annihilation Technique
Autorzy:
Dryzek, J.
Horodek, P.
Skuratov, V.
Powiązania:
https://bibliotekanauki.pl/articles/1033261.pdf
Data publikacji:
2017-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.82.Bg
78.70.Bj
Opis:
Variable energy positron beam and positron lifetime spectroscopy were used to study pure silver samples exposed to irradiation with swift Xe²⁶⁺ ions of energy 167 MeV with different dose: of 10¹³, 5×10¹³ and 10¹⁴ ions/cm². The positron lifetime spectroscopy revealed the presence of dislocations or vacancies associated with dislocations. They are distributed at the depth of about 6 μm, and this correlates with the ion implantation range, i.e. 9 μm. However, some defects are observed also to a depth of about 18 μm. At the depth less than 1 μm from the entrance surface strong dependence of positron diffusion length on the dose is observed. It indicates the presence of interstitial atoms and/or dislocation loops as a result of Xe²⁶⁺ ions implantation.
Źródło:
Acta Physica Polonica A; 2017, 132, 5; 1585-1589
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Submicron $n^{+}$-Layers in Silicon Implanted with $H^{+}$-Ions
Autorzy:
Pokotilo, Y.
Petukh, A.
Giro, A.
Węgierek, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504013.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
81.05.Cy
81.40.Wx
Opis:
Formation of submicron $n^{+}$-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of $n^{+}$-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ $E_1$ = 2.3 eV, the pre-exponential factor $τ_{01}$ = 9.1 × $10^{-17}$ s, the ultimate concentration $N_{01}$ = (1 ± 0.1) × $10^{16} cm^{-3}$; Δ $E_2$ = 1.4 eV, $τ_{02}$ = 4.2 × $10^{-9}$ s, $N_{02}$ = (3 ± 0.1) × $10^{16} cm^{-3}$. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 129-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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