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    Wyświetlanie 1-9 z 9
    Tytuł:
    Long-Term Retardation of Water Evaporation by Ultra-Thin Layers of Polydimethylsiloxanes in the Indoor Conditions
    Autorzy:
    Zhuk, Volodymyr
    Rehush, Andriy
    Burchenya, Sofiya
    Hrytsiv, Oleh
    Powiązania:
    https://bibliotekanauki.pl/articles/1955471.pdf
    Data publikacji:
    2021
    Wydawca:
    Polskie Towarzystwo Inżynierii Ekologicznej
    Tematy:
    evaporation
    retardation
    mass exchange coefficient
    monolayer
    polydimethylsiloxane
    ultrathin layer
    water balance
    Opis:
    Global climate change is causing water imbalances in many regions of the world to exceed evaporation over rainfall, leading to negative environmental consequences and economic losses. An effective way to reduce the water loss due to evaporation from the free surface of water bodies is the use of ultra-thin surface films of special additives. Insufficient stability and significant cost of additives based on fatty alcohols (hexadecanol, octadecanol and their mixtures) necessitate searching for new effective and more economical additives to reduce the water loss due to evaporation. A series of long-term (84 day) experimental studies of the effect of ultra-thin layers of polydimethylsiloxanes PDMS100 and PDMS-200 with a thickness of 1 μm on the rate of evaporation of water from the free surface was conducted under the indoor laboratory conditions. Both the dynamics of change in time of daily values of the effect of evaporation retardation by PDMS films, and total effect from the beginning of experiment were obtained. The maximum daily effects of evaporation retardation were obtained on the 6th day of the study; they are 39.5% for the PDMS-200 film and 32.9% for the PDMS-100 film, respectively. Linear correlations are obtained between the values of the mass transfer coefficient and the free surface temperature for water without additives, as well as for the same free surfaces with ultra-thin PDMS films. Overall integral efficiency of evaporation retardation by the PDMS-200 film with a thickness of 1 μm for 84 days was equal to 17.2%, while for the PDMS-100 film of the same thickness a reduction of evaporation by 5.7% was obtained. Due to the long-term activity, ultra-thin films of polydimethylsiloxanes, especially PDMS-200, can be a profitable alternative to the use of monolayers based on fatty alcohols.
    Źródło:
    Journal of Ecological Engineering; 2021, 22, 8; 33-40
    2299-8993
    Pojawia się w:
    Journal of Ecological Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers
    Autorzy:
    Walczak, J.
    Majkusiak, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/308021.pdf
    Data publikacji:
    2004
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultrathin SOI
    scattering mechanisms
    electron mobility
    Opis:
    Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.
    Źródło:
    Journal of Telecommunications and Information Technology; 2004, 1; 39-49
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of Magnetic Properties of Pt/Co/Pt Films by $Ga^{+}$ Ion Irradiation: Focused versus Uniform Irradiation
    Autorzy:
    Sveklo, I.
    Mazalski, P.
    Jaworowicz, J.
    Jamet, J.
    Vernier, N.
    Mougin, A.
    Ferré, J.
    Kisielewski, M.
    Zablotskii, V.
    Bourhis, E.
    Gierak, J.
    Postava, K.
    Fassbender, J.
    Kanak, J.
    Maziewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398198.pdf
    Data publikacji:
    2018-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    ultrathin films
    ion irradiation
    magnetic hysteresis
    magnetic anisotropy
    magneto-optic Kerr effect
    Opis:
    30 keV $Ga^{+}$ irradiation-induced changes of magnetic and magneto-optical properties of sputtered Pt/Co/Pt ultrathin trilayers films have been studied as a function of the ion fluence. Out-of-plane magnetic anisotropy states with enhanced magneto-optical effects were evidenced for specific values of cobalt thickness and irradiation fluence. Results obtained after uniform or quasi-uniform focused ion beam irradiation on either out-of-plane or in-plane magnetized sputtered pristine trilayers are compared. Similar irradiation-induced magnetic changes are evidenced in quasi-uniformly focused ion beam or uniformly irradiated films, grown either by sputtering or molecular beam epitaxy. We discuss on plausible common mechanisms underlying the observed effects.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 5; 1215-1226
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impurity-concentration dependence of seebeck coefficient in silicon-on-insulator layers
    Autorzy:
    Salleh, F.
    Asai, K.
    Ishida, A.
    Ikeda, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/385169.pdf
    Data publikacji:
    2009
    Wydawca:
    Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
    Tematy:
    Seebeck coefficient
    ultrathin silicon-on-Insulator layers
    nanostructure
    impurity band
    Opis:
    We measured the Seebeck coefficient of P-doped ultrathin silicon-on-insulator (SOI) layers with thicknesses of 6-100 nm. The dependence of the coefficient on the impurity concentration was investigated, and was shown to be in good agreement with that of bulk Si. In addition, it was found to decrease with increasing impurity concentration, as is usual in semiconductor materials. However, for doping levels above 3.5x1019 cm-3, the Seebeck coefficient was observed to increase. This is likely to be due to the influence of an impurity band.
    Źródło:
    Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 134-136
    1897-8649
    2080-2145
    Pojawia się w:
    Journal of Automation Mobile Robotics and Intelligent Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nowa metoda pomiaru lepkości ultracienkich warstw polimerów
    New method for measurement of viscosity of ultrathin polymeric films
    Autorzy:
    Jarząbek, D.
    Rymuza, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/157074.pdf
    Data publikacji:
    2011
    Wydawca:
    Stowarzyszenie Inżynierów i Techników Mechaników Polskich
    Tematy:
    lepkość
    cienkie warstwy
    polimery
    viscosity
    ultrathin films
    polymers
    Opis:
    W artykule przedstawiono nową, metodę pomiaru lepkości ultracienkich warstw polimerów. Polega ona na zanurzeniu w warstwie drgającej sondy pomiarowej. Na podstawie zmian częstotliwości rezonansowej oraz fazy jej drgań można wyznaczyć wartość lepkości w funkcji głębokości zanurzenia. Grubość najcieńszej przebadanej warstwy wynosiła 30 nm, a dokładność pomiaru lepkości około 10%. Otrzymane wyniki są zgodne z przewidywaniami oraz z wynikami otrzymywanymi innymi metodami. Nowa metoda pomiarowa może być przydatna w rozwoju nowych technologii takich jak proces nanoimprint lithography.
    A new method of measurement viscosity of thin polymeric films is presented. The probe, which is placed on the end of the arm of the mini tuning fork (Fig. 2) is made to oscillate and than is put into the PMMA (poly(methyl methacrylate)) films. Because of the rheological properties of measured samples, the amplitude and resonant frequency are changed. Simple mathematical model of probe, which is immersed partially into a liquid and oscillates, was elaborated. Thirteen samples were examined which differed from each other by the thickness of the film and the molecular weight. The thickness of the films is from 30 nm up to 1080 nm (Tab. 1). All measured properties are depended on temperature, thickness of the film, the depth of indentation of the probe and the molecular weight of PMMA. The viscosity is lower in higher temperatures (Fig. 5) but higher with bigger molecular weight (Fig. 6). They are also lower for thicker films. The results gained from this experiment may be useful in development of nanoimprint lithography and many other branches of nanotechnology. What is more, the method gives a possibility of fast and precise measure-ment of rheological properties of many different thin films in function of temperature.
    Źródło:
    Pomiary Automatyka Kontrola; 2011, R. 57, nr 7, 7; 697-700
    0032-4140
    Pojawia się w:
    Pomiary Automatyka Kontrola
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris
    Autorzy:
    Janik, T.
    Jakubowski, A.
    Majkusiak, B.
    Korwin-Pawłowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308423.pdf
    Data publikacji:
    2001
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    MIS structures
    ultrathin dielectrics
    high-k dielectrics
    Opis:
    Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2001, 1; 65-69
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the ordering of n-cyanobiphenyl mesogene molecules on graphene - a computer simulation study
    Autorzy:
    Gwizdała, Wojciech
    Raczyńska, Violetta
    Raczyński, Przemysław
    Górny, Krzysztof
    Dendzik, Zbigniew
    Powiązania:
    https://bibliotekanauki.pl/articles/1955285.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Gdańska
    Tematy:
    order parameter
    liquid crystals
    graphene
    ultrathin layers
    Opis:
    We studied ultrathin layers of n-cyanobiphenyl (n=5,6,7,8) mesogene molecules forming thin films on a graphene plane using molecular dynamics simulations in a wide temperature range (220–420K). Each modeled ensemble was heated to the maximum temperature and then cooled (reverse procedure). We calculated the second rank order parameter as a measure of the molecular order of mesogene molecules and we discuss the distribution of angles between them and the global sample director.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2018, 22, 2; 105-111
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Challenges in ultrathin oxide layers formation
    Autorzy:
    Beck, R.B.
    Jakubowski, A.
    Łukasiak, L.
    Korwin-Pawłowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/307646.pdf
    Data publikacji:
    2001
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    silicon technology
    oxidation
    PECVD
    RTO
    gate oxide
    ultrathin
    layers
    Opis:
    In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2001, 1; 27-34
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultrathin oxynitride films for CMOS technology
    Autorzy:
    Beck, R.B.
    Jakubowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/308025.pdf
    Data publikacji:
    2004
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    MOS technology
    gate stack
    ultrathin oxynitride layers
    high temperature processing
    plasma processing
    Opis:
    In this work, a review of possible methods of oxynitride film formation will be given. These are different combinations of methods applying high-temperature oxidation and nitridation, as well as ion implantation and deposition techniques. The layers obtained using these methods differ, among other aspects in: nitrogen content, its profile across the ultrathin layer,... etc., which have considerable impact on device properties, such as leakage current, channel mobility, device stability and its reliability. Unlike high-temperature processes, which (understood as a single process step) usually do not allow the control of the nitrogen content at the silicon-oxynitride layer interface, different types of deposition techniques allow certain freedom in this respect. However, deposition techniques have been believed for many years not to be suitable for such a responsible task as the formation of gate dielectrics in MOS devices. Nowadays, this belief seems unjustified. On the contrary, these methods often allow the formation of the layers not only with a uniquely high content of nitrogen but also a very unusual nitrogen profile, both at exceptionally low temperatures. This advantage is invaluable in the times of tight restrictions imposed on the thermal budget (especially for high performance devices). Certain specific features of these methods also allow unique solutions in certain technologies (leading to simplifications of the manufacturing process and/or higher performance and reliability), such as dual gate technology for system-on-chip (SOC) manufacturing.
    Źródło:
    Journal of Telecommunications and Information Technology; 2004, 1; 62-69
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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