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Wyświetlanie 1-15 z 116
Tytuł:
Design of a measurement stand with DAQ card and semiconductor laser for recording acoustic signals
Autorzy:
Krawiecki, Z.
Gloger, D.
Powiązania:
https://bibliotekanauki.pl/articles/97505.pdf
Data publikacji:
2014
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
acoustic signal
recording
photodetector
semiconductor laser
Opis:
This article describes the stage of work associated with the implementation of a program- controlled measuring stand for recording the acoustic signals. An attempt has been made for practical implementation of the stand that uses light from a semiconductor laser, modulated by acoustic wave to obtain the information transmitted by this wave. The authors decided to build the hardware construction of the stand with the use of: a PC which serves as the controller, a DAQ card, the light emitter set with a semiconductor laser and the light receiving set capable of processing the received signal into a form suitable for a DAQ card. Moreover, additional equipment used during the examination tests is also described. The software part of the stand includes: device drivers and an application written in LabVIEW environment. The functions of signal processing and analysis, graphical and numerical presentation of the data, recording to file and reading the stored data from a file are all implemented in the application. The achieved stage of a work has been confirmed by sample measurements.
Źródło:
Computer Applications in Electrical Engineering; 2014, 12; 541-550
1508-4248
Pojawia się w:
Computer Applications in Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849000.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849019.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849057.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion
Autorzy:
Qin, C
Shen, W
Zhao, J.
Yu, H.
Xu, E
Powiązania:
https://bibliotekanauki.pl/articles/173469.pdf
Data publikacji:
2015
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
semiconductor optical amplifiers
polarization
patterning effect
Opis:
In this paper, polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion is experimentally and theoretically investigated. The carrier and photon density rate equations are numerically solved by using the time-domain traveling wave model. The material gain calculation, including the strain effect in the active layer, is based on the k·p method. By comparing experimental and computational results, it is demonstrated that the polarization of the injection signal has a significant influence on the gain recovery time of quantum well semiconductor optical amplifier. Under the cross-polarized signals injection, the output signals suffer the weakest and strongest patterning effects both for unstrained and tensile strained quantum well semiconductor optical amplifiers.
Źródło:
Optica Applicata; 2015, 45, 2; 163-172
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Review on Multi-dimensional Zinc Oxide Nanostructures
Autorzy:
Acharyya, Sarani
Acharyya, Swarnali
Samanta, Pijus Kanti
Powiązania:
https://bibliotekanauki.pl/articles/1031833.pdf
Data publikacji:
2020
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Band-gap
Morphology
Semiconductor
Zinc Oxide
Opis:
Nanostructured materials are being widely investigated due to their versatile properties leading to promising applications in various areas starting from electronics to environment and medical science. Amongst the various investigated nanostructures, Zinc Oxide (ZnO) is very important because of its versatile properties like high and direct band gap, optical transparency, room temperature ferromagnetism, piezoelectric property and gas sensing property. This mini review article is focused on the morphological study of various ZnO nanostructures starting from hierarchical nanostructures to quantum dots.
Źródło:
World Scientific News; 2020, 147; 140-165
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Chemical Scanner for Mobile Robot Navigation
Autorzy:
Batog, P.
Wołczowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/384299.pdf
Data publikacji:
2015
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
odours
volatile compounds
semiconductor gas sensors
Opis:
The paper presents a tentative solution to the problem of olfaction-based mobile robot navigation in the chemical plume. This type of navigation requires fast and reliable detection of small gradient of gas concentration in 3D space. The special sensor system designed to detect odour plume with significantly reduced inertia named ”chemical scanner” was proposed [5]. A special aƩention has been given to evaluate sensing system performance in stable and repeatable conditions. The ability to detect small gradient of gas concentration was examined on a special test bench. The real spatial distribution of tested gas in the air was estimated using CFD simulation. The results proved that the real-time detection of small (a few percent of measured value) difference in gas concentration on very short distance (a several centimetres range) is possible. The next stage of research will examine of the developed sensor system on the mobile plaƞorm for its navigation.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2015, 9, 1; 5-11
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Five-wavelength laser microrefractometer
Autorzy:
Bodurov, I
Yovcheva, T
Sainov, S
Powiązania:
https://bibliotekanauki.pl/articles/174646.pdf
Data publikacji:
2015
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
refractometer
semiconductor lasers
dispersion
refractive index
diffraction
Opis:
Corresponding author: In this paper, the design and testing of a five-wavelength laser microrefractometer are presented. Five semiconductor lasers are used for the spectral region of 405–1320 nm. The presented device is based on the critical angle method. In this case, the critical angle of total internal reflection is determined with the help of a CCD camera detecting the disappearance of the diffraction pattern, created by a metal diffraction grating. The samples of a thin liquid layer (< 10 μm) are placed between a flint-glass prism and a chromium diffraction grating. The refractive indices of two matching liquid products of Cargille Laboratories are investigated for the approbation of the presented device. The measured values of the refractive indices are used for the dispersion curves construction. The obtained values of the refractive indices are compared with the catalog data given by the manufacturer.
Źródło:
Optica Applicata; 2015, 45, 2; 199-204
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers
Autorzy:
Engström, O.
Raeissi, B.
Piscator, J.
Mitrovic, I. Z.
Hall, S.
Gottlob, H. D. B.
Schmidt, M.
Hurley, P. K.
Cherkaoui, K.
Powiązania:
https://bibliotekanauki.pl/articles/308138.pdf
Data publikacji:
2010
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
defects
dielectrics
high-k
metal oxide semiconductor
Opis:
The transition regions of GdSiO/SiOx and HfO2/ SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission electron microscopy (TEM). From measurements of thermally stimulated current (TSC), electron states were found in the transition region of the HfO2/SiOx structures, exhibiting instability attributed to the flexible structural molecular network expected to surround the trap volumes. The investigations were focused especially on whether the trap states belong to an agglomeration consisting of a single charge polarity or of a dipole constellation. We found that flat-band voltage shifts of MOS structures, that reach constant values for increasing oxide thickness, cannot be taken as unique evidence for the existence of dipole layers.
Źródło:
Journal of Telecommunications and Information Technology; 2010, 1; 10-19
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface treatment of GaSb and related materials for the processing of mid-infrared semiconductor devices
Autorzy:
Papis-Polakowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/378417.pdf
Data publikacji:
2006
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Tematy:
semiconductor devices
mid-infrared wavelenth range
GaSb
Opis:
Various chemical treatments of GaSb and related compounds has been studied with the aim to develop procedures of polishing of GaSb substrates, preparation of their surfaces for deposition of metal and dielectric films, for liquid phase epitaxial growth, and finally fabrication of passivating coatings on surfaces of GaSb and its alloys. A broad spectrum of surface characterisation techniques has been used to analyse morphology of the surface and its chemical composition after each of the treatments applied. This allowed us to elaborate a complete set of technological procedures necessary for the fabrication of the efficient GaSb- based photo- and light emitting diodes operating in the midi-infrared wavelength range.
Źródło:
Electron Technology : Internet Journal; 2005-2006, 37/38, 4; 1-34
1897-2381
Pojawia się w:
Electron Technology : Internet Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative investigation of SiC and Si power electronic devices operating at high switching frequency
Autorzy:
Zymmer, K.
Mazurek, P.
Powiązania:
https://bibliotekanauki.pl/articles/200057.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
semiconductor devices
silicon carbide
high frequency converters
Opis:
The paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/ěs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10–200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 4; 555-559
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Autorzy:
Górecki, K.
Górecki, P.
Powiązania:
https://bibliotekanauki.pl/articles/220969.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
IGBT
thermal resistance
measurements
transistor
semiconductor devices
Opis:
In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.
Źródło:
Metrology and Measurement Systems; 2015, 22, 3; 455-464
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Obrazowanie termiczne stanów przejściowych przy załączaniu tyrystora
Thermal imaging of thyristor turn-on transients
Autorzy:
Kałuża, M.
Napiórkowski, K.
Powiązania:
https://bibliotekanauki.pl/articles/154464.pdf
Data publikacji:
2011
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
termowizja
przyrządy półprzewodnikowe mocy
thermovision
power semiconductor devices
Opis:
W artykule przedstawiono wyniki badań dotyczące możliwości zastosowania kamery termowizyjnej do rejestracji termogramów szybkich procesów przejściowych generacji ciepła w czasie załączania otwartej struktury półprzewodnikowej tyrystora. Badania wykazały możliwość rejestracji termogramów w czasie załączania przyrządu półprzewodnikowego mocy przy odpowiednim doborze niestandardowych ustawień pracy kamery termowizyjnej.
The paper presents the results of investigations on possible use of a thermal imaging camera for the recording of fast transient processes of heat generation during the switching of semiconductor structures in semiconductor power devices, based on measurements of a thyristor semiconductor structure. Using a measurement setup consisting of an IR camera and of a purpose build current pulse generator, the thermal behaviour of the T00-80 thyristor semiconductor structure during turn on was investigated. The thermograms were recorded at speeds reaching 1400 frames per second. Studies of the semiconductor structure of the thyristor mounted in a special holder showed the possibility of using a thermal camera for analyzing the behaviour of power semiconductor devices, however further increase in the temporal resolution of the recording process will be needed. One of the solutions will be to synchronize operation of a pulse generator and a thermal camera, including a controlled, variable time delay between current pulse generation and image acquisition.
Źródło:
Pomiary Automatyka Kontrola; 2011, R. 57, nr 10, 10; 1199-1201
0032-4140
Pojawia się w:
Pomiary Automatyka Kontrola
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Three-channel X-ray detection head for diagnostics of plasma in noisy environment
Autorzy:
Ryć, L.
Kaczmarczyk, J.
Martinez, J. F.
Scholz, M.
Słysz, M.
Powiązania:
https://bibliotekanauki.pl/articles/148717.pdf
Data publikacji:
2001
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
high-temperature plasma
semiconductor detector
X-ray diagnostics
Opis:
A compact, three-channel, noise-resistant detection head based on semiconductor detectors has been built for the diagnostics of X-ray emission from plasmas. It is useful in the energy range of 0.5–20 keV.
Źródło:
Nukleonika; 2001, 46, suppl. 1; 95-97
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Granularity dependency of forecast accuracy in semiconductor industry
Autorzy:
Ott, H., C.
Heilmayer, S.
Sng, C. S. Y.
Powiązania:
https://bibliotekanauki.pl/articles/409461.pdf
Data publikacji:
2013
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
semiconductor
forecast accuracy
granularity
planning
Infineon Technologies
UniSIM
Opis:
Accurate demand forecasting is critical in the semiconductor industry due to high production costs, long lead times, and high market volatility. To remain competitive, companies strive for accurate forecasts to drive their planning cycles and meet customer demand. Although an organisation may not be able to control the accuracy of forecast received due to externalities, they can define the granularity which is most suited to the purpose of the forecasting. Infineon Technologies uses different product granularities for the sales and marketing forecast, for the operational demand forecast and for the monthly volume rolling forecast (VRFC). The latter is the subject of this work. This paper presents the impact of forecast granularity for the VRFC on the accuracy of the plan and checks the dependency of this forecast accuracy on time over the entire planning horizon. Sources of inaccuracies were also identified through discussion with the company experts. The results of this study indicate that granularities and time do have significant impact over the plan accuracy.
Źródło:
Research in Logistics & Production; 2013, 3, 1; 49-58
2083-4942
2083-4950
Pojawia się w:
Research in Logistics & Production
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 116

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