Skocz do pozycji: 1.

Tytuł:

Optically Active Si:Er Layers Grown by the Sublimation MBE Method

Autorzy:

Stepikhova, M.
Andreev, A.
Andreev, B.
Krasil'nik, Z.
Shmagin, V.
Kuznetsov, V.
Rubtsova, R.
Jantsch, W.
Ellmer, H.
Palmetshofer, L.
Preier, H.
Karpov, Yu.
Piplits, K.
Hutter, H.

Powiązania:

https://bibliotekanauki.pl/articles/1992203.pdf

Data publikacji:

1998-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi

Opis:

We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10$\text{}^{18}$ cm$\text{}^{-3}$. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.

Źródło:

Acta Physica Polonica A; 1998, 94, 3; 549-554
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 2.

Tytuł:

Terahertz Response of a Point Contact Based on CdTe/CdMgTe Quantum Well in Magnetic Field

Autorzy:

Grigelionis, I.
Białek, M.
Grynberg, M.
Czapkiewicz, M.
Kolkovskiy, V.
Wiater, M.
Wojciechowski, T.
Wróbel, J.
Wojtowicz, T.
But, D.
Knap, W.
Łusakowski, J.

Powiązania:

https://bibliotekanauki.pl/articles/1409358.pdf

Data publikacji:

2012-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

85.30.Hi
73.20.Mf

Opis:

A photoresponse at THz frequencies of a quantum point contact fabricated on a CdTe/CdMgTe quantum well was studied at low temperatures as a function of magnetic field. The spectra show a structure which was interpreted as resulting from the cyclotron resonance and magnetoplasmon excitations. The wavelength of the fundamental magnetoplasmon mode was found to be about 2 μm which coincides with one of dimensions of the point contact. We also discuss the possibility of coupling of magnetoplasmon modes to shallow impurity transitions in the quantum well.

Źródło:

Acta Physica Polonica A; 2012, 122, 6; 1069-1072
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 3.

Tytuł:

(Eu,Gd)Te - MBE Growth and Characterization

Autorzy:

Dziawa, P.
Taliashvili, B.
Domuchowski, W.
Łusakowska, E.
Arciszewska, M.
Demchenko, I.
Dobrowolski, W.
Dybko, K.
Fedorych, O. M.
Nadolny, A. J.
Osinniy, V.
Petrouchyk, A.
Story, T.

Powiązania:

https://bibliotekanauki.pl/articles/2038228.pdf

Data publikacji:

2004-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.50.Pp
81.15.Hi

Opis:

Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.

Źródło:

Acta Physica Polonica A; 2004, 106, 2; 215-221
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 4.

Tytuł:

Aboveground dry biomass partitioning and nitrogen accumulation in early maturing soybean ‘Merlin’
Udział części roślin oraz gromadzenie azotu w plonie nadziemnej biomasy wcześnie plonującej soi odmiany ‘Merlin’

Autorzy:

Zając, Tadeusz
Oleksy, Andrzej
Ślizowska, Anna
Śliwa, Józef
Klimek-Kopyra, Agnieszka
Kulig, Bogdan

Powiązania:

https://bibliotekanauki.pl/articles/1628039.pdf

Data publikacji:

2017

Wydawca:

Polskie Towarzystwo Botaniczne

Tematy:

morphological traits
HI
growth stage
NHI

Opis:

The aim of the study was to determine the biomass and nitrogen accumulation in early maturing soybean plants experiencing contrasting weather conditions. Soybean (Glycine max) is a species of agricultural crop plant that is widely described in scientific publications. During 2014–2016, a field experiment with early maturing soybean ‘Merlin’ was carried out at Grodziec Śląski, Poland (49°48'01" N, 18°52'04" E). Results showed that the morphological traits of the plants, the yield of individual plants, and the soybean crop were all closely related to the climatic conditions. A high amount of precipitation stimulated seed development, resulting in a high production potential. The harvest index calculated for soybean ‘Merlin’ was high and exceeded 0.5 g g−1. The nitrogen content of the aboveground biomass increased during ontogenesis. The maximum yield of dry matter was noted at the green maturity phase, which subsequently decreased at the full maturity phase because of the loss of the leaf fraction. The variation in the effectiveness of nitrogen accumulation in seeds between 2015 and 2016 was 30%. The nitrogen harvest index values were high in each year of the experiment and exceeded 0.92 g−1. For the production of 1 ton of seeds with an adequate amount of soybean straw, plants needed, on average, 68 kg of nitrogen.
Celem badań było określenie akumulacji biomasy i azotu we wcześnie dojrzewającej odmianie soi [Glycine max (L.) Merr.] w zmiennych warunkach pogodowych. W latach 2014–2016 w Grodźcu Śląskim (49°48'01" N, 18°52'04" E) przeprowadzono eksperyment polowy z wcześnie dojrzewającą odmianą soi ‘Merlin’. Wykazano, że cechy morfologiczne roślin soi oraz plonowanie były ściśle związane z warunkami klimatycznymi. Wysoka ilość opadów stymulowała rozwój nasion, dając w rezultacie wysoki potencjał produkcyjny. Indeks żniwny (HI) obliczony dla odmiany ‘Merlin’ był wysoki i przekraczał 0.5 g g−1. Zawartość azotu w nadziemnej biomasie wzrastała wraz z rozwojem generatywnym roślin. Maksymalną wydajność suchej masy odnotowano w początkowej fazie dojrzewania. W fazie pełnej dojrzałości wydajność suchej masy spadła, z powodu utraty frakcji liści. Zróżnicowanie w efektywności akumulacji azotu w nasionach w latach 2015–2016 wyniosło 30%. Wartości indeksu żniwnego azotu (NHI) były wysokie w każdym roku doświadczenia i przekraczały 0.92 g g−1. Do produkcji 1 tony nasion z odpowiednią ilością słomy rośliny potrzebowały średnio 68 kg azotu.

Źródło:

Acta Agrobotanica; 2017, 70, 4
0065-0951
2300-357X

Pojawia się w:

Acta Agrobotanica

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 5.

Tytuł:

MOCVD of High Quality LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ Thin Films

Autorzy:

Samoylenkov, S. V.
Gorbenko, O. Yu.
Graboy, I. E.
Kaul, A. R.
Svetchnikov, V. L.
Zandbergen, H. W.

Powiązania:

https://bibliotekanauki.pl/articles/1964530.pdf

Data publikacji:

1997-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.55.-a

Opis:

Epitaxial LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ films were prepared by flash evaporation MOCVD on LaAlO$\text{}_{3}$, SrTiO$\text{}_{3}$, LaSrGaO$\text{}_{4}$ and ZrO$\text{}_{2}$(Y$\text{}_{2}$O$\text{}_{3}$) single crystalline substrates. The highest T$\text{}_{c}$ and j$\text{}_{c}$ (77 K, 100 Oe) values were 89 K, 2.7×10$\text{}^{6}$ A/cm$\text{}^{2}$ (LaAlO$\text{}_{3}$) and 88 K, 1.5×10$\text{}^{6}$ A/cm$\text{}^{2}$ (SrTiO$\text{}_{3}$) respectively. The occurrence of secondary phases inclusions in LuBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ films correlates with the possibility of epitaxial relations with the film matrix or the substrate.

Źródło:

Acta Physica Polonica A; 1997, 92, 1; 243-247
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 6.

Tytuł:

Zależność między występowaniem minerałów kruszcowych a charakterystyką geochemiczną materii organicznej w łupku miedzionośnym obszaru złożowego KGHM Polska Miedź S.A.
Relationship between the occurrence of ore minerals and geochemical properties of organic matter in the Kupferschiefer strata, KGHM Polska Miedź S.A. mining area

Autorzy:

Pieczonka, J.
Więcław, D.
Piestrzyński, A.
Kotarba, M. J
Rożek, R.
Jedlecki, R.
Szarowski, W.
Włodarczyk, M.

Powiązania:

https://bibliotekanauki.pl/articles/2061758.pdf

Data publikacji:

2017

Wydawca:

Państwowy Instytut Geologiczny – Państwowy Instytut Badawczy

Tematy:

łupek miedzionośny
rozmieszczenie minerałów
materia organiczna
wskaźniki TOC
HI i HI/OI
obszar złożowy KGHM Polska Miedź S.A.
Kupferschiefer
distribution of minerals
organic matter
TOC
HI and HI/OI indices
KGHM Polska Miedź S.A. mining area

Opis:

W pracy przedstawiono charakterystykę okruszcowania i materii organicznej, występujących w łupku miedzionośnym, w wybranych profilach w dowiązaniu do przestrzennego rozkładu mineralizacji kruszcowej oraz parametrów i wskaźników materii organicznej w łupku miedzionośnym obszaru złożowego KGHM Polska Miedź S.A. Próbki skał pobrano w polu górniczym Głogów Głęboki Przemysłowy (5 próbek), oraz w północnej części pola Sieroszowice (11 próbek). W obydwu lokalizacjach opróbowano strefy depresji, charakteryzujące się większą miąższością łupku oraz strefy skłonu elewacji z widocznym wyraźnie ścienieniem łupku i strefy elewacji, gdzie jego miąższość zwykle nie przekracza 0,1 m. Badaniami objęto poziom łupku miedzionośnego, gdyż w nim zachodzi najwięcej zmian oraz jego charakter decyduje o ilości i jakości okruszcowania, w dolnej i górnej części profili złoża. Stwierdzono istotne zależności występujące pomiędzy całkowitą zawartością węgla organicznego i wartościami wskaźników HI i HI/OI materii organicznej a ilością i jakością okruszcowania. Wskaźnik HI wyraźnie koreluje się z zawartością siarczków miedzi. Jednakże wartości HI poniżej 100 mogą wskazywać na jakościową zmianę okruszcowania, w kierunku siarczków z miedzią dwuwartościową np. kowelinu. Niskie wartości wskaźnika HI/OI odpowiadają próbkom pochodzącym ze strefy przejściowej, gdzie zawartość minerałów Cu jest zmienna.
General characteristics of ore minerals and organic matter in selected areas of the KGHM PM S.A are discussed in the paper. For the study, 5 samples from the Industrial Głogów Głęboki field and 11 samples from the Sieroszowice mining field have been collected At both locations, sampling was carried out from three areas: (I) the depression zone characterized by a relatively high thickness of the Kupferschiefer, (II) the elevation slope with a pronounced decrease of thickness, and finally (III) from the elevation where the Kupferschiefer thickness usually does not exceed 0.1 m. Detailed studies have been carried out on samples from the Kupferchiefer, because this horizon heavily affects the quantity and quality of ore mineralization in other parts of the economic ore deposit. Important relationships between the TOC content, HI and HI/OI indices and the quantity and quality of minerals is discussed. The hydrogen index is well correlated with the quantity of copper sulphides; however, its values below 100 may show quality changes of copper sulphides from Cu+ to Cu2+ (covellite). A low value of the HI/OI index represents samples from the transition zone, were sulphide contents are variable.

Źródło:

Biuletyn Państwowego Instytutu Geologicznego; 2017, 468; 9--27
0867-6143

Pojawia się w:

Biuletyn Państwowego Instytutu Geologicznego

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 7.

Tytuł:

Brzydale od HI-POINTA

Autorzy:

Czerwiński, Marek (militaria).

Powiązania:

Strzał 2020, nr 7/8, s. 26-30

Data publikacji:

2020

Tematy:

Hi-Point Firearms
Pistolety
Hi-Point C9 (pistolet)
Hi-Point JHP 45 (pistolet)
Budowa i konstrukcje
Obsługa i eksploatacja
Artykuł z czasopisma fachowego
Artykuł z czasopisma wojskowego

Opis:

Artykuł dotyczy dwóch modeli pistoletów samopowtarzalnych amerykańskiej firmy Hi-Point: model C9 i JHP, które jesienią 2020 roku dotarły na polski rynek. Autor omawia budowę, konstrukcję i dane taktyczno-techniczne obu modeli, a także różne wersje JHP i dostępne do obu modeli akcesoria. Autor opisuje stosunek jakości do ceny broni oraz wrażenia z ich eksploatacji.

Dostawca treści:

Bibliografia CBW

/5

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Skocz do pozycji: 8.

Tytuł:

The contracted forms in the Present Indicative Middle and Passive of Athematic Verbs in Poetry of Ancient Greece of Archaic and Classical Period

Autorzy:

Frąckiewicz, Katarzyna

Powiązania:

https://bibliotekanauki.pl/articles/1046709.pdf

Data publikacji:

2015-01-01

Wydawca:

Uniwersytet im. Adama Mickiewicza w Poznaniu

Tematy:

-hi ending
-ai ending
athematic verbs
Greek poetry

Opis:

The aim of the paper is an attempt at analysing the contracted forms of the second-person singular of athematic verbs in Greek poetry. Verbs such as dÚnamai and ™p…stamai have forms with -sai and -hi, -ai in the present indicative middle and passive. Contemporary scholars express different views on where the contracted forms appear. The paper presents the opinions of ancient grammarians and modern linguists on the mentioned subject. The critical analysis of these opinions has been contrasted with the forms present in the poetry of archaic and classical period.

Źródło:

Symbolae Philologorum Posnaniensium Graecae et Latinae; 2015, 25, 1; 5-13
0302-7384

Pojawia się w:

Symbolae Philologorum Posnaniensium Graecae et Latinae

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 9.

Tytuł:

Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys

Autorzy:

An, N.
Liu, C.
Fan, C.
Dong, X.
Song, Q.

Powiązania:

https://bibliotekanauki.pl/articles/1030612.pdf

Data publikacji:

2018-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.05.Ea
42.55.Px
81.15.Hi

Opis:

As the most important material parameter of semiconductor, bandgap is necessary to be investigated to meet the design requirements of the high-performance optoelectronic devices. A new method of is proposed to calibrate the bandgap of antimonide based multi-component alloys with considering the effect of spin-orbit splitting off bands and the doublet degeneracy of valance band on the bandgaps of Sb-containing materials. A correction factor is introduced in the conventional calculation, and the spin-orbit splitting method is proposed. Besides, the In_xGa_{1-x}As_ySb_{1-y} films with different compositions are grown on GaSb substrates by molecular beam epitaxy, and the corresponding bandgaps are obtained by photoluminescence to test the accuracy and reliability of this new method. An error rate analysis reveals that the α calculated by the spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the Moon method, which means that the new method can calculate the antimonide multicomponent more accurately with some applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

Źródło:

Acta Physica Polonica A; 2018, 133, 1; 118-120
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 10.

Tytuł:

Ferromagnetic Transition in $Ge_{1-x}Mn_{x}Te$ Layers

Autorzy:

Knoff, W.
Domukhovski, V.
Dybko, K.
Dziawa, P.
Jakieła, R.
Łusakowska, E.
Reszka, A.
Świątek, K.
Taliashvili, B.
Story, T.
Szałowski, K.
Balcerzak, T.

Powiązania:

https://bibliotekanauki.pl/articles/1791343.pdf

Data publikacji:

2009-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

75.50.Pp
75.30.Et
81.15.Hi

Opis:

Ferromagnetic transition temperature in thin layers of diluted magnetic (semimagnetic) semiconductor $Ge_{1-x}Mn_{x}Te$ was studied experimentally by SQUID magnetometry method and analyzed theoretically for a model Ising-type diluted magnetic system with Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction. The key features of the experimentally observed dependence of the Curie temperature on Mn content (x ≤ 0.12) and conducting hole concentration p = (1-10) × $10^{21} cm^{-3}$ were reproduced theoretically for realistic valence band and crystal lattice parameters of p-$Ge_{1-x}Mn_{x}Te$ taking into account short carrier mean free path encountered in this material and Ruderman-Kittel-Kasuya-Yosida mechanism with both delta-like and diffused character of spatial dependence of the exchange coupling between magnetic ions and free carriers.

Źródło:

Acta Physica Polonica A; 2009, 116, 5; 904-906
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 11.

Tytuł:

MBE Growth and Properties of GaMnAs(100) Films

Autorzy:

Sadowski, J.
Domagała, J.
Bąk- Misiuk, J.
Świątek, K.
Kanski, J.
Ilver, L.
Oscarsson, H.

Powiązania:

https://bibliotekanauki.pl/articles/1992165.pdf

Data publikacji:

1998-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
79.60.Bm
71.55.Eq

Opis:

We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.

Źródło:

Acta Physica Polonica A; 1998, 94, 3; 509-513
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 12.

Tytuł:

Assessment of relative-active tectonics in rhumel-smendou basin (ne Algeria) – observations from the morphometric indices and hydrographic features obtained by the digital elevation model

Autorzy:

Manchar, Nabil
Hadji, Riheb
Bougherara, Ahmed
Boufaa, Kamel

Powiązania:

https://bibliotekanauki.pl/articles/2201673.pdf

Data publikacji:

2022

Wydawca:

Uniwersytet Rolniczy im. Hugona Kołłątaja w Krakowie

Tematy:

Bs
SL
Hi
Smf
AF
Vf
IAT
SMF
BS

Opis:

The eastern Tell Atlas of Algeria is characterized by a complex neotectonic system including lateral strike-slips, and normal and reverse faults. The landscape of the Neogene basin of MilaConstantine acquired its shape due to the perpetual action of tectonic activity, and erosion processes. Neo-tectonics in this basin have affected the geometry of the stream network and the contemporary landscape topography. Our methodology evaluates the active tectonics in this mountainous region by a combination of drainage network and geomorphic indices, namely, the basin-shape index (Bs), stream-length gradient (SL), hypsometric integral (HI), mountain front sinuosity (Smf), basin asymmetry factor (AF), and valley-floor ratio (Vf). The calculated values of the six measured geomorphic indices were used to differentiate the distribution of faults function as well as the relative tectonic activity in the study area. The obtained results from the GIS-based multi-criteria analysis of these indices consist of the index of active tectonics (IAT). Hence, we defined four hierarchic degrees of IAT, namely, very high (VH), high (H), moderate (M), and low (L). The relative active tectonics represents an obvious correlation between morpho-structural features, tectonic activities, and uplift rates. It selects the morphotectonic features and landforms that interpret the tectonic events in the study area. Our results prove that this approach discerns the most active regions related to the neo-tectonic action in the RhumelSmendou drainage basin. The combination of geomatics and field surveys highlights the cliffs which are still rising by using the drainage patterns, the landform model, and the mountain range shape.

Źródło:

Geomatics, Landmanagement and Landscape; 2022, 4; 47--65
2300-1496

Pojawia się w:

Geomatics, Landmanagement and Landscape

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 13.

Tytuł:

Topographical, Magnetic and Optical Studies of (II,Mn)VI Quantum Structures Grown on (Ga,Mn)As

Autorzy:

Butkutė, R.
Aleszkiewicz, M.
Janik, E.
Cywiński, G.
Wojnar, P.
Däweritz, L.
Primus, J.
De Boeck, J.
Kossut, J.

Powiązania:

https://bibliotekanauki.pl/articles/2036853.pdf

Data publikacji:

2003-06

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
07.79.Pk
78.55.-m

Opis:

We report on an overgrowth of quantum structures consisting of diluted magnetic semiconductor CdMnTe quantum wells with non-magnetic barriers made of CdMgTe or ZnTe on ferromagnetic MnAs and GaMnAs films by molecular beam epitaxy. Atomic force microscopy images of the quantum structures grown on MnAs demonstrated the existence of two types of regions on the surface: protruded islands with micrometric sizes, surrounded by areas of small-scale roughness. Magnetic force microscopy study of these samples revealed a magnetic domain structure only on the above mentioned islands. The (II,Mn)VI quantum wells grown on GaMnAs films exhibited relatively smooth surface, but no magnetic force microscopy signal was measurable either before or after magnetizing the sample. In the luminescence spectra of all our quantum structures the emission attributed to CdMnTe quantum wells was observed. The influence of magnetization on the luminescence line position was investigated.

Źródło:

Acta Physica Polonica A; 2003, 103, 6; 649-657
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 14.

Tytuł:

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Autorzy:

Zytkiewicz, Z.
Dluzewski, P.
Borysiuk, J.
Sobanska, M.
Klosek, K.
Witkowski, B.
Setkiewicz, M.
Pustelny, T.

Powiązania:

https://bibliotekanauki.pl/articles/1492480.pdf

Data publikacji:

2011-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
81.05.Dz
61.46.Km

Opis:

We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.

Źródło:

Acta Physica Polonica A; 2011, 120, 6A; A-015-A-016
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 15.

Tytuł:

Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation

Autorzy:

Papadopoulou, P.
Stavrinides, S.
Hanias, M.
Magafas, L.

Powiązania:

https://bibliotekanauki.pl/articles/1401377.pdf

Data publikacji:

2015-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

85.30.De
85.30.Mn
85.30.Hi

Opis:

In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.

Źródło:

Acta Physica Polonica A; 2015, 127, 4; 1349-1351
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 16.

Tytuł:

Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface

Autorzy:

Klimko, G.
Evropeytsev, E.
Sitnikova, A.
Gronin, S.
Sedova, I.
Sorokin, S.
Ivanov, S.

Powiązania:

https://bibliotekanauki.pl/articles/1376199.pdf

Data publikacji:

2014-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.66.-w
68.65.-k
81.15.Hi

Opis:

The studies of structural and optical properties of molecular beam epitaxy grown pseudomorphic hybrid structures with AlGaAs/GaAs quantum well placed closely to the GaAs/ZnSe heterointerface are presented. The interfaces were formed in different ways (Zn or Se initial GaAs surface exposure, different growth temperature and ZnSe growth mode) on As-rich c(4×4) and (2×4) GaAs surfaces. It has been demonstrated that the photoluminescence intensity from the near-heterointerface GaAs QW is influenced most significantly by the procedure of ZnSe growth initiation. The bright photoluminescence (77 K) from the near-interface GaAs quantum well is observed if the Se-decoration procedure is used during the GaAs/ZnSe heterointerface formation on (2×4)As GaAs surface. It reduces noticeably if the GaAs reconstruction changes to c(4×4)As and disappears completely when Zn pre-exposure of GaAs surface is used. These effects are discussed in terms of different ratio of Ga-Se and As-Zn bonds at the GaAs/ZnSe heterointerface resulting in different band offsets and/or uncompensated built-in electric fields.

Źródło:

Acta Physica Polonica A; 2014, 126, 5; 1184-1186
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 17.

Tytuł:

Magnetic Study of $α^{\prime\prime}$ and $γ^{\prime\prime}$-Phases of Iron Nitride Thin Films

Autorzy:

Frątczak, E.
Prieto, J.
Moneta, M.

Powiązania:

https://bibliotekanauki.pl/articles/1368214.pdf

Data publikacji:

2014-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.55.-a
61.05.Qr

Opis:

Most of the Fe-nitride phases have been studied in much detail. Nevertheless, there is still a debate about the most efficient, exact and controlled way of obtaining thin films of the desired iron nitride phases. Thin films of iron nitrides were deposited by Molecular Beam Epitaxy in Ultra High Vacuum. By changing the growth parameters we tried to obtain the α"-phase in its purest form. We worked also on iron mononitride, FeN (γ"-FeN) which is known to exist in different phases. The stoichiometry of the samples was determined by means of resonant Rutherford Backscattering Spectroscopy. The samples were studied by room temperature Conversion Electron Mössbauer Spectroscopy. We achieved as much as 24% of pure α"-phase and provide evidence of the existence of γ"-FeN with vacancies and of the transformation of nonmagnetic γ"-phase into magnetic ε-phase after time exposure.

Źródło:

Acta Physica Polonica A; 2014, 126, 1; 214-215
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 18.

Tytuł:

Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

Autorzy:

Mizerov, A.
Jmerik, V.
Kaibyshev, V.
Komissarova, T.
Masalov, S.
Sitnikova, A.
Ivanov, S.

Powiązania:

https://bibliotekanauki.pl/articles/1811962.pdf

Data publikacji:

2008-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.Cr
81.05.Ea
81.15.Hi

Opis:

The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature $T_S$ ≈ 760°C and Ga to activated nitrogen flux ratio $F_Ga//F_N^\ast$ ≈ 1.8.

Źródło:

Acta Physica Polonica A; 2008, 114, 5; 1253-1258
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 19.

Tytuł:

Success and failure in M&As: Is there a place for a paradigm change? Evidence from the Israeli hi-tech industry

Autorzy:

Ofer, Zaks

Powiązania:

https://bibliotekanauki.pl/articles/943187.pdf

Data publikacji:

2016

Wydawca:

Uniwersytet Ekonomiczny w Poznaniu

Tematy:

mergers and acquisitions
performance measures
organizational performance
hi-tech industry

Opis:

The consistent growth of mergers & acquisitions (M&As) activity around the world in the last decade, and the volume of capital involved in such transactions, stand in sharp contrast to the high failure rates evident in M&As. The inconsistency amongst empirical findings on M&A performance is based on a variety of settings and on different measurements investigated under the generic label ‘M&As’. This paper claims that we need to differentiate between general M&As and those involving technology firms acquisition. The combination of the drive, the dynamic process and the human capital capabilities which characterize the latter, is expected to result in a more successful result than was reported. Hi-tech innovative acquirers can benefit from buying small, start- up firms by adding valuable resources, increasing market power and initiating strategic renewal. It is proposed that in addition to the traditional critical success factors (CSFs) identified as the most influential variables on M&A performance, attention needs to be given to the acquired firms' motivation to succeed and to the performance of start-ups in the hi-tech sector. Some unique variables in that configuration need to be researched, amongst them are: trust, readiness for change, commitment, knowledge transfer and preserved autonomy. By doing that an opportunity will be given to examine if the general research paradigm of M&As fits the hi-tech’s circumstances or if a separate one is needed to measure the merger performance of start-ups. It is assumed that the Israeli's start-ups mergers represent a more successful case and that they will perform with more positive results. This paper presents a theoretical framework for investigating M&A performance in the hi-tech area through an interdisciplinary approach. The article is organized as follows: The first section outlines the various theoretical ideas and research done on M&As. The second part deals with some critical reviews that aim to explain the confusing data produced from that paradigm. Section three turns to the emerging area of the technological business environment highlighting the uniqueness of the Israeli start-up phenomena. The last section combines performance with hi-tech in order to provide new insights on the M&As processes for executives engaged in both planning and implementing M&A deals. The paper concludes with a short summary and practical recommendation for further research

Źródło:

Economics and Business Review; 2016, 2(16), 1
2392-1641

Pojawia się w:

Economics and Business Review

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 20.

Tytuł:

Active surveillance in poultry in Poland for avian influenza subtypes H5 and H7

Autorzy:

Pikuła, Anna
Śmietanka, Krzysztof
Lisowska, Anna
Minta, Zenon

Powiązania:

https://bibliotekanauki.pl/articles/1039246.pdf

Data publikacji:

2014

Wydawca:

Polskie Towarzystwo Biochemiczne

Tematy:

avian influenza virus (AIV)
poultry
surveillance
hemagglutination inhibition test (HI)

Opis:

A serological surveillance programme for avian influenza A virus (AIV) subtype H5 and H7 in poultry was implemented in Poland in 2008-2013 with two main objectives: i) to detect subclinical infections or previous exposures to AIV H5 and H7 subtypes and ii) to demonstrate the AI- free status of Poland. During this period, over 45 000 serum samples from 2833 holdings were examined using the hemagglutination inhibition test (HI). The presence of HI antibodies was detected in 8 breeder geese holdings (7 positive for H5 and 1 positive for H7 AIV) and in 1 breeder duck holding (H5-positive), which represented 0.32% of all investigated holdings. All seropositive flocks were examined by real time RT-PCR with negative results, which substantiated the AI-free status of Poland. Positive results detected in clinically healthy poultry kept in an open range system indicate prior infections with low pathogenic AIV originating from the wild-bird reservoir.

Źródło:

Acta Biochimica Polonica; 2014, 61, 3; 459-463
0001-527X

Pojawia się w:

Acta Biochimica Polonica

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 21.

Tytuł:

Wybrane wskaźniki produkcyjności roślin bobiku w warunkach wzrastającego nawożenia azotem
Chosen productivity indexes of faba bean fertilized with increasing N doses

Autorzy:

Prusiński, Janusz
Borowska, Magdalena
Kaszkowiak, Ewa

Powiązania:

https://bibliotekanauki.pl/articles/41452522.pdf

Data publikacji:

2008

Wydawca:

Instytut Hodowli i Aklimatyzacji Roślin

Tematy:

LAI
SPAD
bobik
indeks żniwny (HI)
nawożenie i dokarmianie N
plon biomasy
faba bean
HI
N fertilization and foliar application
yield of biomass

Opis:

Ścisłe dwuczynnikowe doświadczenie polowe wykonano w latach 2004–2007 na polu doświadczalnym Stacji Badawczej Wydziału Rolniczego Uniwersytetu Technologiczno - Przyrodniczego w Bydgoszczy. Czynnik pierwszy stanowiły cztery dawki azotu N: 0, 30, 60 i 90 kg∙ha^-1 zastosowane przedsiewnie w postaci saletry amonowej zawierającej po 50% azotu amonowego i azotanowego. W fazie 8–10 liści, na początku pąkowania oraz na początku i na zakończenie kwitnienia rośliny opryskiwano jedną czwartą z 30, 60 i 90 kg N kg∙ha^-1 w moczniku z dodatkiem 7∙H₂O∙MgSO₄ (czynnik drugi). Obiekt kontrolny stanowiły poletka nieopryskiwane mocznikiem. W 3-4 dni po ostatnim oprysku roślin mocznikiem, na zakończenie fazy kwitnienia, określono LAI (Sun Scan Canopy Analysis System, UK) i zawartość chlorofilu w liściach (SPAD, Minolta), a po zbiorze także plon biomasy oraz indeks żniwny. We wszystkich latach warunki wilgotnościowego do dnia pomiarów były podobne, ale końcowy plon biomasy bobiku był silnie zróżnicowany i kształtowany głównie przez sumę opadów w okresie rozwoju generatywnego. Nie stwierdzono addytywnego oddziaływania dawek azotu zastosowanych doglebowo i dolistnie na końcowy plon biomasy bobiku i badane wskaźniki. W niekorzystnych warunkach wilgotnościowych indeks żniwny ulegał zmniejszeniu wraz ze wzrostem nawożenia azotowego. Stwierdzono, że wysokie wartości wskaźnika LAI zmierzone na zakończenie fazy kwitnienia nie były miarodajnym wskaźnikiem do prognozowania wysokości plonu końcowego biomasy bobiku ani udziału w nim plonu nasion.
The strict 2-factor field experiment was carried out in 2004–2007 at the Mochełek Experiment Station of Bydgoszcz University of Technology and Life Sciences. The first factor constituted four nitrogen doses (0, 30, 60 and 90 kg N∙ha^-1) applied before faba bean sowing in ammonium nitrate containing 50% of N-NO₃ and N-NH₄. At 8–10 leaves stage, at plant budding and at the beginning and before the end of flowering 30, 60 and 90 kg N∙ha^-1 in urea with 7∙H₂O∙MgSO₄ were applied at four equal parts of each dose. Control was not sprayed with urea. LAI (SunScan Canopy Analysis System, UK) and chlorophyll content in leaves (SPAD, Minolta) were measured 3-4 days after the last urea application; yield of total biomass and harvest index were also determined. In all the years studied, water conditions for faba bean plants up to the date of measurements were similar; however, the total yield of biomass was strongly differentiated and mainly affected by the rainfall in the generative period. No additive effects of pre-sowing and foliar application of N on the total biomass yield and values of indexes were found. Under unfavorable water conditions harvest index decreased with increasing pre-sowing N doses. It was concluded that a high LAI value measured just before the end of faba bean plant flowering was a reliable index for prediction neither a final high yield of biomass nor the share of seed yield in total biomass yield.

Źródło:

Biuletyn Instytutu Hodowli i Aklimatyzacji Roślin; 2008, 248; 105-116
0373-7837
2657-8913

Pojawia się w:

Biuletyn Instytutu Hodowli i Aklimatyzacji Roślin

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 22.

Tytuł:

Opowieść a‑ alternatywna. O Patrz pod: Miłość Dawida Grossmana
A‑ alternative Story. On See Under: Love by David Grossman

Autorzy:

Przymuszała, Beata

Powiązania:

https://bibliotekanauki.pl/articles/699572.pdf

Data publikacji:

2018

Wydawca:

Wydawnictwo Uniwersytetu Śląskiego

Tematy:

Zagłada
fikcja
opowieść/historia alternatywna
Holocaust
fiction
alternative hi/story

Opis:

The article presents an interpretation of David Grossman’s novel See Under: Love in the context of alternative history. Revealing the problems related to depicting the Holocaust, the story becomes a critique of our culture. It shows how four distinct parts are related, creating a vision of the dark sphere of our “I” hidden from the world: an alternative version of a story about ourselves is a sui generis reckoning with the concept of humanity dominant in our European community.
Artykuł przedstawia interpretację powieści Davida Grosmana Patrz pod: Miłość w  kontekście historii alternatywnej. Historia ujawniająca problemy związane z opowiadaniem o Zagładzie staje się krytyką naszej kultury. Pokazuje, w jaki sposób cztery odrębne części łączą się ze sobą, tworząc wizję ukrywanej przed światem ciemnej sfery naszego „ja”: alternatywna wersja opowieści o nas samych jest rodzajem rozrachunku z utrwaloną w naszej europejskiej społeczności koncepcją człowieczeństwa.

Źródło:

Narracje o Zagładzie; 2018, 4; 259-268
2450-4424

Pojawia się w:

Narracje o Zagładzie

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 23.

Tytuł:

Opowieści o brzmieniu – o stylu i retoryce w opisach sprzętu audio na łamach czasopisma „Hi-Fi i Muzyka”
Stories about sound. Style and rhetoric in the descriptions of audio equipment in the periodical "Hi-FI i Muzyka"

Autorzy:

Grzegorzewski, Krzysztof

Powiązania:

https://bibliotekanauki.pl/articles/967963.pdf

Data publikacji:

2016

Wydawca:

Uniwersytet Łódzki. Wydawnictwo Uniwersytetu Łódzkiego

Tematy:

journalism
music
magazines
specialist press
hi-fi
audio
rhetoric
stylistics
persuasion

Opis:

The paper is dedicated to Hi-Fi magazines. The author offers a stylistic analysis of selected texts taken from “Hi-FI i Muzyka” (magazines from the 2012-2014 period), focused on specific types of columns: tests of audio equipment (amplifiers, CD players, gramophones, loudspeakers, etc). The article contains a short description of the magazine and its content, then author has suggested stylistic tools for describing sound (ordered in categories) and offered an analysis with citations.

Źródło:

Acta Universitatis Lodziensis. Folia Litteraria Polonica; 2016, 32, 2
1505-9057
2353-1908

Pojawia się w:

Acta Universitatis Lodziensis. Folia Litteraria Polonica

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 24.

Tytuł:

Wpływ warunków oświetlenia i częściowej filtracji światła niebieskiego na wyniki testu widzenia barwnego Farnswortha-Munsella 100 Hue

Autorzy:

Żaglewska, K.
Kowalczyk-Hernández, M.

Powiązania:

https://bibliotekanauki.pl/articles/132541.pdf

Data publikacji:

2016

Wydawca:

M2 Media

Tematy:

Hi-Vision LongLife BlueControl
światło niebieskie
test F-M 100 Hue

Opis:

W poniższym artykule przedstawiono wyniki doświadczenia, w którym na 19-osobowej grupie pacjentów zbadano wpływ rodzaju oświetlenia oraz stosowania soczewek pokrytych powłoką Hi-Vision LongLife BlueControl na wyniki testu Farnswortha-Munsella 100 Hue. Wykazano znaczącą różnicę pomiędzy całkowitą sumą błędów popełnianych przez osoby z normalnym widzeniem barwnym w warunkach oświetlenia źródłem typu D65 i w warunkach oświetlenia źródłem TL84, przy którym pacjenci mylili się istotnie częściej. Filtr chroniący przed szkodliwym działaniem promieniowania niebieskiego na tkanki oka nie wpłynął w sposób istotny na zdolność rozróżniania barw u tych badanych.
The results of the experiment in which 19 patients were examined by means of Farnsworth-Munsell 100 Hue test are presented in the article below. It has been shown that for normal trichromats the total error score (TES) depends on the illumination spectrum. For the TL 84 type lamp the TES is notably higher than for the D65 type. In second experiment the patients worn spectacles with the Hoya Hi-Vision LongLife BlueControl lens coating. As it turned out, selective filtration of the harmful blue light did not affect significantly the results of the Farnsworth-Munsell 100 Hue test.

Źródło:

Optyka; 2016, 6; 60-63
2081-1268

Pojawia się w:

Optyka

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 25.

Tytuł:

Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates

Autorzy:

Benyahia, D.
Kubiszyn, Ł.
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.

Powiązania:

https://bibliotekanauki.pl/articles/1055151.pdf

Data publikacji:

2017-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.65.Cd
81.05.Ea
61.05.cp

Opis:

Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.

Źródło:

Acta Physica Polonica A; 2017, 132, 2; 322-324
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 26.

Tytuł:

Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by nanoindentation

Autorzy:

Majtyka, A.
Trębala, M.
Tukiainen, A.
Chrobak, D.
Borgieł, W.
Räisänen, J.
Nowak, R.

Powiązania:

https://bibliotekanauki.pl/articles/1075863.pdf

Data publikacji:

2016-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.40.Jj
62.20.F-
81.15.Hi
81.05.Ea

Opis:

The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E=83.07± 1.78 GPa), hardness (H=5.19±0.25 GPa) and "true hardness" (H_{T}=5.73±0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σ_{Y}=3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

Źródło:

Acta Physica Polonica A; 2016, 130, 4; 1131-1133
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 27.

Tytuł:

Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots

Autorzy:

Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, D.
Kim, M.
Kwon, Y.
Choe, J.
Kim, J.
Leem, J.

Powiązania:

https://bibliotekanauki.pl/articles/1535820.pdf

Data publikacji:

2010-10

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.37.Ps
78.55.Cr
78.67.Hc

Opis:

The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.

Źródło:

Acta Physica Polonica A; 2010, 118, 4; 673-676
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 28.

Tytuł:

Reduction of the Optical Losses in CdTe/ZnTe Thin-Film Solar Cells

Autorzy:

Chusnutdinow, S.
Pietruszka, R.
Zaleszczyk, W.
Makhniy, V.
Wiater, M.
Kolkovsky, V.
Wojtowicz, T.
Karczewski, G.

Powiązania:

https://bibliotekanauki.pl/articles/1375701.pdf

Data publikacji:

2014-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
73.61.Ga
85.60.Dw
88.40.jm

Opis:

We report on reduction of optical losses in n-CdTe/p-ZnTe thin-film solar cells grown by molecular beam epitaxy. The investigated thin-film devices were grown from elemental sources on monocrystalline, semi-insulating, (100)-oriented GaAs substrates. The optical losses have been reduced by a texturing of the device surface and by depositing of a ZnO antireflection coating. Current-voltage and spectral characteristics of the investigated p-ZnTe/n-CdTe solar cells depend significantly on the preparation of the surface of the ZnTe window. We describe a procedure of chemical etching of the ZnTe window leading to surface texturing. A ZnO layer of proper thickness deposited by low-temperature atomic layer deposition technique on the ZnTe surface forms an effective antireflection coating that leads to the reduction of optical losses. Due to reduction of the optical losses we observe increase of the short-circuit current, $J_{SC}$, by almost 60% and of the energy conversion efficiency by 44%.

Źródło:

Acta Physica Polonica A; 2014, 126, 5; 1072-1075
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 29.

Tytuł:

Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique

Autorzy:

Jia, Guo-Zhi
Yao, Jiang-Hong
Shu, Yong-Chun
Xing, Xiao-Dong
Pi, Biao

Powiązania:

https://bibliotekanauki.pl/articles/1808036.pdf

Data publikacji:

2009-05

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.55.Ln
68.65.Fg
68.65.Cd

Opis:

The superlattice-in-well structures were grown using a cycled submonolayer AlGaAs/GaAs deposition technique. The optical quality of Al-Ga interdiffusion in AlGaAs/GaAs superlattice was investigated by measuring the photoluminescence of samples grown at temperature from 610°C to 630°C. Results show that Al composition can be modulated under some growth temperature or period. Effect of the growth interrupt in the growth process of superlattice on film optical quality is also discussed. Especially, the role played by the period of superlattice in the process of obtaining high quality film material with low composition is investigated in detail.

Źródło:

Acta Physica Polonica A; 2009, 115, 5; 944-946
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 30.

Tytuł:

Epitaxially Induced Defects in Sr- and O-doped La$\text{}_{2}$CuO$\text{}_{4}$ Thin Films Grown by MBE: Implications for Transport Properties

Autorzy:

Locquet, J.-P
Williams, E. J.

Powiązania:

https://bibliotekanauki.pl/articles/1964235.pdf

Data publikacji:

1997-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.72.Nn
74.62.Fj
81.15.Hi
74.72.Dn

Opis:

In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T$\text{}_{c}$ thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.

Źródło:

Acta Physica Polonica A; 1997, 92, 1; 69-84
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 31.

Tytuł:

Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

Autorzy:

Tsarova, T.
Wosiński, T.
Mąkosa, A.
Skierbiszewski, C.
Grzegory, I.
Perlin, P.

Powiązania:

https://bibliotekanauki.pl/articles/2047691.pdf

Data publikacji:

2007-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

71.55.Eq
73.20.Hb
61.72.Lk
81.15.Hi

Opis:

We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E$\text{}_{C}$ - 0.28 eV, T2 at E$\text{}_{C}$ - 0.60 eV, and T3 at E$\text{}_{V}$ + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injection conditions, revealed one minority-carrier trap, T4, with the activation energy of 0.20 eV. The three majority-carrier traps were revealed in the spectra measured under different reverse-bias conditions, suggesting that they are present in various parts of the laser-diode heterostructure. In addition, these traps represent different charge-carrier capture behaviours. The T1 trap, which exhibits logarithmic capture kinetics, is tentatively attributed to electron states of dislocations in the n-type wave-guiding layer of the structure. In contrast, the T2, T3, and T4 traps display exponential capture kinetics and are assigned to point defects.

Źródło:

Acta Physica Polonica A; 2007, 112, 2; 331-337
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 32.

Tytuł:

Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs

Autorzy:

Sadowski, J.
Kanski, J.
Adell, M.
Domagała, J. Z.
Janik, E.
Łusakowska, E.
Brucas, R.
Hanson, M.

Powiązania:

https://bibliotekanauki.pl/articles/2044534.pdf

Data publikacji:

2005-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.10.Jt
81.15.Hi
68.65.Hb
68.37.Ps

Opis:

We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.

Źródło:

Acta Physica Polonica A; 2005, 108, 5; 851-858
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 33.

Tytuł:

Evaluation of HI-6 oxime: potential use in protection of human acetylcholinesterase inhibited by antineoplastic drug irinotecan and its cyto/genotoxicity in vitro

Autorzy:

Radić, Božica
Vrdoljak, Ana
Želježić, Davor
Fuchs, Nino
Berend, Suzana
Kopjar, Nevenka

Powiązania:

https://bibliotekanauki.pl/articles/1041045.pdf

Data publikacji:

2007

Wydawca:

Polskie Towarzystwo Biochemiczne

Tematy:

irinotecan
HI-6
protection
reactivation
micronuclei
apoptosis
comet assay
acetylcholinesterase
chromosome aberrations

Opis:

The function of acetylcholinesterase (AChE) is the rapid hydrolysis of the neurotransmitter acetylcholine (ACh), which is involved in the numerous cholinergic pathways in both the central and the peripheral nervous system. Therefore, AChE measurement is of high value for therapy management, especially during the course of intoxication with different chemicals or drugs that inhibit the enzyme. Pyridinium or bispyridinium aldoximes (oximes) are able to recover the activity of the inhibited enzyme. Since their adverse effects are not well elucidated, in this study the efficiency of HI-6 oxime in protection and/or reactivation of human erythrocyte AChE inhibited by the antineoplastic drug irinotecan as well as its cyto/genotoxicity in vitro were investigated. HI-6 was effective in protection of AChE and increased its activity up to 30%; the residual activity after irinotecan inhibition was 7%. Also, it reactivated the enzyme previously inhibited by 50% irinotecan (4.6 µg/ml) applied at ¼ of the IC50 value. The tested concentrations of HI-6 exhibited acceptable genotoxicity towards white blood cells, as estimated by the alkaline comet assay, DNA diffusion assay and cytogenetic endpoints (structural chromosome aberrations and cytokinesis-block micronucleus assay). The results obtained warrant the further investigation of HI-6 in vivo, as well as its development for possible application in chemotherapy.

Źródło:

Acta Biochimica Polonica; 2007, 54, 3; 583-593
0001-527X

Pojawia się w:

Acta Biochimica Polonica

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 34.

Tytuł:

Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE

Autorzy:

Wierzbicka, A.
Żytkiewicz, Z.
Sobańska, M.
Kłosek, K.
Łusakowska, E.

Powiązania:

https://bibliotekanauki.pl/articles/1431598.pdf

Data publikacji:

2012-04

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.05.cp
61.05.cm
81.15.Hi
68.55.-a

Opis:

Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.

Źródło:

Acta Physica Polonica A; 2012, 121, 4; 899-902
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 35.

Tytuł:

Waveguide Design for Long Wavelength InGaN Based Laser Diodes

Autorzy:

Muzioł, G.
Turski, H.
Siekacz, M.
Sawicka, M.
Wolny, P.
Cheze, C.
Cywiński, G.
Perlin, P.
Skierbiszewski, C.

Powiązania:

https://bibliotekanauki.pl/articles/1403640.pdf

Data publikacji:

2012-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

42.55.Px
85.60.-q
42.82.Et
81.15.Hi

Opis:

One-dimensional optical waveguide calculations were performed to study the dependence of waveguide design on confinement factor (Γp) and optical losses ($\alpha_i$) of nitride laser diodes for emission wavelength ranging from 405 nm to 520 nm. We found that the conventional waveguide design containing GaN waveguide and AlGaN cladding layers known from violet laser diode does not support sufficient confinement of the optical mode for long wavelength devices (λ > 450 nm). We proposed a new design consisting of a thick InGaN waveguide which enhances the confinement. We compared the theoretical predictions with laser diodes grown by plasma assisted molecular beam epitaxy.

Źródło:

Acta Physica Polonica A; 2012, 122, 6; 1031-1033
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 36.

Tytuł:

Electrical Properties of p-ZnTe/n-CdTe Photodiodes

Autorzy:

Chusnutdinow, S.
Makhniy, V.
Wojtowicz, T.
Karczewski, G.

Powiązania:

https://bibliotekanauki.pl/articles/1409588.pdf

Data publikacji:

2012-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
73.61.Ga
85.60.Dw
88.40.jm

Opis:

Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thinfilm p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × $10^{-3}$ eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion of these devices.

Źródło:

Acta Physica Polonica A; 2012, 122, 6; 1077-1079
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 37.

Tytuł:

High-Resolution X-Ray Diffraction Studies on MBE-Grown p-ZnTe/n-CdTe Heterojunctions for Solar Cell Applications

Autorzy:

Wichrowska, K.
Domagala, J.
Wosinski, T.
Chusnutdinow, S.
Karczewski, G.

Powiązania:

https://bibliotekanauki.pl/articles/1375736.pdf

Data publikacji:

2014-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.05.cp
81.05.Dz
81.15.Hi
88.40.jm

Opis:

High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and misfit strain in p-ZnTe/n-CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different (001)-oriented substrates of GaAs and CdTe. The X-ray diffractometer results indicate that the CdTe layers, grown on lattice mismatched GaAs substrate, are partially relaxed, by the formation of misfit dislocations at the interface, and display residual vertical strain of the order of $10^{-4}$. The presence of threading dislocations in the layers effectively limits the efficiency of solar energy conversion in the investigated heterojunctions. Homoepitaxially grown CdTe layers, of much better structural quality, display unexpected compressive strain in the layers and the relaxed lattice parameter larger than that of the substrate. Possible reasons for the formation of that unusual strain are discussed.

Źródło:

Acta Physica Polonica A; 2014, 126, 5; 1083-1086
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 38.

Tytuł:

CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy

Autorzy:

Gronin, S.
Sorokin, S.
Kazanov, D.
Sedova, I.
Klimko, G.
Evropeytsev, E.
Ivanov, S.

Powiązania:

https://bibliotekanauki.pl/articles/1376051.pdf

Data publikacji:

2014-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
78.55.Et
78.67.Hc
68.65.Fg

Opis:

This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.

Źródło:

Acta Physica Polonica A; 2014, 126, 5; 1096-1099
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 39.

Tytuł:

Collision cascade and spike effects of X-ray irradiation on optoelectronic devices

Autorzy:

Salleh, S.
Abdul Amir, H.
Kumar Tiwari, A.
Pien Chee, F.

Powiązania:

https://bibliotekanauki.pl/articles/1065735.pdf

Data publikacji:

2016-07

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

24.10.-i
25.45.De
25.45.Hi
32.80.-t
32.80.Fb

Opis:

Bombardment with high energy particles and photons can cause potential hazards to the electronic systems. These effects range from degradation of performance to functional failure, which can affect the operation of a system. Such failures become increasingly likely as electronic components are getting more sophisticated, while decreasing in size and tending to a larger integration. In this paper, the effects of X-ray irradiation on a plastic encapsulated infrared light emitting diode, coupled to a plastic encapsulated silicon infrared phototransistor, with both of them being electrically isolated at ON and OFF modes, are investigated. All the devices are exposed to a total dose of up to 1000 mAs. The electrical parameters of the optoelectronic devices during the radiation exposure and at post-irradiation are compared to the pre-irradiation readings. The findings show that the highest degradation occurs at low dose of exposure; beyond 100 mAs the relative decrease in collector current of the phototransistor is gradually reduced. The most remarkable feature found, is the operational dependence of the bias collector current, indicating a higher degradation for low bias forward current of the light emitting diode. The degradation induced at the forward current of the light emitting diode by X-rays irradiation is almost negligible whereas a decrease of the rate of change in current transfer ratio is significant during the X-ray irradiation. The results show that there is no significant difference between current transfer ratio of ON mode and OFF mode radiation. It is observed that the operating mode of the optoelectronic devices after exposure to 1000 mAs of X-ray irradiation contributes no major variation in the degree of damage.

Źródło:

Acta Physica Polonica A; 2016, 130, 1; 93-97
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 40.

Tytuł:

Near IR Refractive Index for GaInN Heavily Doped with Silicon

Autorzy:

Cywiński, G.
Kudrawiec, R.
Rzodkiewicz, W.
Kryśko, M.
Litwin-Staszewska, E.
Misiewicz, J.
Skierbiszewski, C.

Powiązania:

https://bibliotekanauki.pl/articles/1791356.pdf

Data publikacji:

2009-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.72.uj
78.66.Fd
81.15.Hi
68.55.-a
78.20.-e

Opis:

The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.

Źródło:

Acta Physica Polonica A; 2009, 116, 5; 936-938
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 41.

Tytuł:

Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells

Autorzy:

Cywiński, G.
Skierbiszewski, C.
Siekacz, M.
Kryśko, M.
Feduniewicz-Żmuda, A.
Gladysiewicz, M.
Kudrawiec, R.
Misiewicz, J.
Nevou, L.
Kheirodin, N.
Julien, F.

Powiązania:

https://bibliotekanauki.pl/articles/1811923.pdf

Data publikacji:

2008-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.30.Fs
78.67.De
68.65.Fg
73.21.Fg
81.15.Hi

Opis:

GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.

Źródło:

Acta Physica Polonica A; 2008, 114, 5; 1093-1099
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 42.

Tytuł:

Interface Engineering in Heteroepitaxy

Autorzy:

Hong, S. K.
Chen, Y.
Ko, H. J.
Yao, T.

Powiązania:

https://bibliotekanauki.pl/articles/2035571.pdf

Data publikacji:

2002

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.35.-p
68.35.Dv
81.15.-z
81.15.Hi
81.10.Aj

Opis:

We report the importance of interface engineering in heteroepitaxy with examples of plasma-assisted molecular beam epitaxial ZnO growths on (0001) sapphire substrates and on (0001) GaN/sapphire templates, whose interfaces are engineered to improve and to control properties of ZnO films. The growth of rocksalt structure MgO buffer on Al$\text{}_{2}$O$\text{}_{3}$ (0001) is developed for ZnO epitaxy. By employing the MgO buffer layer, the formation of 30$\text{}^{o}$ rotated mixed domains is prohibited and two-dimensional layer-by-layer growth of ZnO on sapphire substrate is achieved. High-resolution X-ray diffraction reveals the superior improvement in a crystal quality of ZnO films with an MgO buffer. Polarity of wurtzite structure ZnO films on Ga-polar GaN/sapphire templates is controlled by changing interface structures. By forming a single crystalline, monoclinic Ga$\text{}_{2}$O$\text{}_{3}$ interfacial layer between GaN and ZnO through O-plasma pre-exposure on the Ga-polar GaN surface, O-polar ZnO films are grown. By forming the ZnO/GaN heterointerface without an interfacial layer through the Zn pre-exposure on the Ga-polar GaN surface, Zn-polar ZnO films are grown.

Źródło:

Acta Physica Polonica A; 2002, 102, 4-5; 541-554
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 43.

Tytuł:

Growth and Properties of ZnMnTe Nanowires

Autorzy:

Zaleszczyk, W.
Janik, E.
Presz, A.
Szuszkiewicz, W.
Morhange, J. F.
Dłużewski, P.
Kret, S.
Kirmse, H.
Neumann, W.
Dynowska, E.
Domagała, J. Z.
Caliebe, W.
Aleszkiewicz, M.
Pacuski, W.
Golnik, A.
Kossacki, P.
Baczewski, L. T.
Petroutchik, A.
Karczewski, G.
Wojtowicz, T.

Powiązania:

https://bibliotekanauki.pl/articles/2047697.pdf

Data publikacji:

2007-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.46.Df
68.65.La
78.55.Et
78.67.Bf
81.15.Hi

Opis:

Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2μm and that Mn$\text{}^{2+}$ ions were incorporated into substitutional sites of the ZnTe crystal lattice.

Źródło:

Acta Physica Polonica A; 2007, 112, 2; 351-356
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

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Skocz do pozycji: 44.

Tytuł:

Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

Autorzy:

Cywiński, G.
Skierbiszewski, C.
Feduniewicz-Żmuda, A.
Siekacz, M.
Nevou, L.
Doyennette, L.
Julien, F. H.
Prystawko, P.
Kryśko, M.
Grzanka, S.
Grzegory, I.
Porowski, S.

Powiązania:

https://bibliotekanauki.pl/articles/2046911.pdf

Data publikacji:

2006-08

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

68.65.Fg
78.66.-w
78.67.De
78.40.Fy
81.15.Hi

Opis:

Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.

Źródło:

Acta Physica Polonica A; 2006, 110, 2; 175-181
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

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Skocz do pozycji: 45.

Tytuł:

Structural Properties of Co and CoFe Electrodes Forming a Magnetic Tunnel Junction

Autorzy:

Gładczuk, L.
Pankowski, P.
Paszkowicz, W.
Dłużewski, P.
Wójcik, M.
Przysłupski, P.

Powiązania:

https://bibliotekanauki.pl/articles/2047237.pdf

Data publikacji:

2007-01

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

81.15.Hi
68.65.Ac
61.10.Nz
76.60.Lz
68.37.Lp

Opis:

The M$\text{}_{1}$/MgO/M$\text{}_{2}$ trilayer tunnel magnetoresistance systems are studied by means of X-ray diffraction, NMR, and transmission electron microscopy techniques. As M$\text{}_{1}$ and M$\text{}_{2}$ electrodes we used Co, Fe, and CoFe layers. The growth mechanism and structural quality of both electrodes and of the epitaxial MgO barrier forming the magnetic tunnel junctions are experimentally examined. It is shown that the crystallographic coherence of magnetic tunnel junctions across the MgO barrier is significantly disturbed by imperfect crystal structure of magnetic electrodes. The NMR results indicate a difference in short-range order between bottom and top electrodes.

Źródło:

Acta Physica Polonica A; 2007, 111, 1; 135-140
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 46.

Tytuł:

InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

Autorzy:

Semenov, A. N.
Solov'ev, V. A.
Meltser, B. Ya.
Lyublinskaya, O. G.
Terent'ev, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.

Powiązania:

https://bibliotekanauki.pl/articles/2044535.pdf

Data publikacji:

2005-11

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

78.55.Cr
78.67.Hc
81.07.Ta
81.15.Hi
81.16.Dn

Opis:

We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.

Źródło:

Acta Physica Polonica A; 2005, 108, 5; 859-865
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 47.

Tytuł:

LT-InGaAs Layer Grown for Near Surface SESAM Application

Autorzy:

Jasik, A.
Muszalski, J.
Kosmala, M.
Pierściński, K.

Powiązania:

https://bibliotekanauki.pl/articles/1807666.pdf

Data publikacji:

2009-12

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

61.72.jj
68.55.ag
68.65.Ac
81.15.Hi
81.65.Rv

Opis:

We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.

Źródło:

Acta Physica Polonica A; 2009, 116, S; S-56-S-59
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 48.

Tytuł:

Reading the Ironic Layers of the (Re)construction: The Colony and its (Colonial?) Others in the Construct of “Austrian Bosnia” in The Bridge on Drina River BY iVO ANDRIĆ

Autorzy:

Škvorc, Boris

Powiązania:

https://bibliotekanauki.pl/articles/1179551.pdf

Data publikacji:

2015-12-02

Wydawca:

Uniwersytet im. Adama Mickiewicza w Poznaniu

Tematy:

Andrić
Identity
Hi/story as a Construct
Native Informant
Post-colonial/Post-imperial Positioning of Reading

Opis:

This text offers a reading of Ivo Andrić’s novel The Bridge on Drina River (1945) placing special emphasis on the economies of utterance and the (re)construction of sto-ry/myth produced from the position of various native informants at the level of authorial intent. It argues that the position of colonial subjects/objects in the novel, as uttered and emphasised by Andrić could best be read from a post-colonial perspective. That opens two possibilities of reading Andrić and South Slavic historical novels in general. The first one concerns the understanding of space of the South European narration/stereotyping as the space of imperial/colonial power games. The second one deals with consequences of that presumption and appropriation of histori-cal realms that deal with the space of narration in connection with various latter naturalisation of the text(s). The emphasis is put on Andrić’s novel. However, this reading of the text’s construc-tions also opens the way of re-reading other “historical” novels and their ideological/political constructs in South Slavic and wider Central European/Eastern European context/discourse.
Artykuł proponuje lekturę powieści Ivo Andrićia Most na rzece Drnie (1945), kładąc specjalny nacisk na ekonomię wypowiedzi i (re)konstrukcję opowieści (mitu) produkowanej na poziomie autorskiej intencji z perspektywy różnych natywnych informatorów. To dowodzi, że pozycja kolonialnego podmiotu/przedmiotu w powieści, wypowiedziana i uwydatniona przez Andricia, może być najlepiej odczytana z perspektywy post-kolonialnej. W ten sposób otwierają się dwie możliwości czytania Andrićia i, w ogóle, południowosłowiańskiej narracji stereotypi-zowanej jako przestrzeń imperialnych/kolonialnych gier władzy. Drugi jest konsekwencją po-przedniego założenia i zawłaszczenia historycznych realiów, które rządzą przestrzenią narracji w związku z różnymi wtórnymi naturalizacjami tekstu(ów). Nacisk zostaje tu położony na powieści Andrićia. Jednakże czytanie konstrukcji tekstu otwiera również drogę do ponownego odczytania innych „historycznych“ powieści oraz ich ideologicznych konstruktów w południowo-słowiańskim i szerzej środkowo-wschodnioeuropejskim kontekście/dyskursie.

Źródło:

Porównania; 2015, 16; 71-88
1733-165X

Pojawia się w:

Porównania

Dostawca treści:

Biblioteka Nauki

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Skocz do pozycji: 49.

Tytuł:

III-Nitride Nanostructures for Infrared Optoelectronics

Autorzy:

Monroy, E.
Guillot, F.
Leconte, S.
Bellet-Amalric, E.
Nevou, L.
Doyennette, L.
Tchernycheva, M.
Julien, F. H.
Baumann, E.
Giorgetta, F.
Hofstetter, D.
Dang, Le Si

Powiązania:

https://bibliotekanauki.pl/articles/2046980.pdf

Data publikacji:

2006-09

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

73.21.Fg
78.67.De
85.60.Gz
85.35.Be
81.15.Hi
81.07.St

Opis:

Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.

Źródło:

Acta Physica Polonica A; 2006, 110, 3; 295-301
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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Skocz do pozycji: 50.

Tytuł:

RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

Autorzy:

Ratajczak, R.
Stonert, A.
Guziewicz, E.
Gierałtowska, S.
Krajewski, T.
Luka, G.
Wachnicki, L.
Witkowski, B.
Godlewski, M.

Powiązania:

https://bibliotekanauki.pl/articles/1400467.pdf

Data publikacji:

2013-05

Wydawca:

Polska Akademia Nauk. Instytut Fizyki PAN

Tematy:

77.55.hf
81.05.Dz
81.15.Hi
68.55.ag
82.80.Yc
61.85.+p

Opis:

The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.

Źródło:

Acta Physica Polonica A; 2013, 123, 5; 899-903
0587-4246
1898-794X

Pojawia się w:

Acta Physica Polonica A

Dostawca treści:

Biblioteka Nauki

/5

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