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    Wyświetlanie 1-13 z 13
    Tytuł:
    The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application
    Autorzy:
    Szindler, Marek
    Szindler, Magdalena M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1835965.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    thin film
    atomic layer deposition
    titanium dioxide
    Opis:
    Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).
    Źródło:
    Optica Applicata; 2020, 50, 4; 663-670
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The impact of atomic layer deposition technological parameters on optical properties and morphology of Al2O3 thin films
    Autorzy:
    Dobrzanski, L. A.
    Szindler, M.
    Hajduk, B.
    Kotowicz, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/173801.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    thin film
    aluminum oxide
    atomic layer deposition
    Opis:
    This paper presents some results of investigations on aluminum oxide Al2O3 thin films prepared by the atomic layer deposition method on polished monocrystalline silicon. It has been described how the technological parameters of the deposition process, like the number of cycles and substrate temperature, influenced the optical properties and morphology of prepared thin films. Their physical and optical properties like thickness, uniformity and refractive index have been investigated with spectroscopic ellipsometry, atomic force microscopy and UV/vis optical spectroscopy.
    Źródło:
    Optica Applicata; 2015, 45, 4; 573-583
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Al₂O₃/TiO₂ double antireflection coating deposited by ALD method
    Autorzy:
    Szindler, Marek
    Szindler, Magdalena M.
    Orwat, Justyna
    Kulesza-Matlak, Grażyna
    Powiązania:
    https://bibliotekanauki.pl/articles/2174838.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    antireflection coating
    atomic layer deposition method
    solar cells
    Opis:
    Al₂O₃/TiO₂ thin films were deposited onto monocrystalline silicon surfaces using an atomic layer deposition. Their surface morphology and optical properties were examined for their possible use in solar cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness was measured using a spectroscopic reflectometer. The refractive index and the reflection characteristics were determined. First, the optical properties of the Al₂O₃ thin filmand its influence on recombination in the semiconductor were examined. In this way, it can fulfil a double role in a solar cell. Since reflection reduction was only achieved in a narrow range, it was decided to use the Al₂O₃/TiO₂ system. Thanks to this solution, the light reflection was reduced in a wide range (even below 0.2%).
    Źródło:
    Opto-Electronics Review; 2022, 30, 3; art. no. e141952
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells
    Autorzy:
    Szindler, Marek
    Szindler, Magdalena M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2063888.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    antireflection coating
    atomic layer deposition method
    solar cells
    Opis:
    The technology of manufacturing silicon solar cells is complex and consists of several stages. The final steps in succession are the deposition of antireflection layer and discharge contacts. Metallic contacts are usually deposited by the screen printing method and then, fired at high temperature. Therefore, this article presents the results of a research on the effect of heat treatment on the properties of the Al2O3 thin film previously deposited by the atomic layer deposition method. It works well as both passivating and antireflection coating. Moreover, heat treatment affects the value of the cell short-circuit current and, thus, its efficiency. The surface morphology, optical and electrical properties were investigated, describing the influence of heat treatment on the properties of the deposited layers and the manufactured solar cells.
    Źródło:
    Opto-Electronics Review; 2021, 29, 4; 181--186
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Characteristics of Tin Oxide Films Grown by Thermal Atomic Layer Deposition
    Autorzy:
    Yoon, Seong Yu
    Choi, Byung Joon
    Powiązania:
    https://bibliotekanauki.pl/articles/352926.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    atomic layer deposition
    tin oxide
    electrical property
    oxygen adsorption
    Opis:
    Tin dioxide (SnO2 ) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO2 films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino)tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO2 films are grown on SiO2 /Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO2 films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO2 film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.
    Źródło:
    Archives of Metallurgy and Materials; 2020, 65, 3; 1041-1044
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Application of Al2O3, ZnO, and TiO2 ALD thin films as antireflection coating in the silicon solar cells
    Autorzy:
    Szindler, Marek
    Szindler, Magdalena
    Powiązania:
    https://bibliotekanauki.pl/articles/27315697.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    optical thin film
    antireflection coating
    atomic layer deposition
    solar cells
    Opis:
    The article describes the results of a research on the surface morphology and optical properties of Al₂O₃, ZnO, and TiO₂ thin films deposited by atomic layer deposition (ALD) for applications in silicon solar cells. The surface topography and elemental composition were characterised using a scanning electron microscope, and thickness was determined using an optical reflectometer. The samples were structurally examined using a Raman spectrometer. The structural variant was identified: for Al₂O₃ it is sapphire, for TiO₂ it is anatase, and for ZnO it is wurtzite. Possibilities of minimising light reflection using single and double thin film systems below 5% were presented. For the first time, the effectiveness of these thin films on the current-voltage characteristics and electrical parameters of manufactured silicon solar cells was examined and compared. The solar cell with the highest efficiency of converting solar radiation into electricity was obtained for Al₂O₃/TiO₂ and the efficiency of such a photovoltaic device was 18.74%.
    Źródło:
    Opto-Electronics Review; 2023, 31, 4; art. no. e148223
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, Electrical, and Optical Properties of ZnO Films Grown by Atomic Layer Deposition at Low Temperature
    Autorzy:
    Park, Ji-Young
    Weon, Ye Bin
    Jung, Myeong Jun
    Choi, Byung Joon
    Powiązania:
    https://bibliotekanauki.pl/articles/2174578.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    zinc oxide
    ZnO
    atomic layer deposition
    low temperature growth
    optoelectronic properties
    Opis:
    Zinc oxide (ZnO) is a prominent n-type semiconductor material used in optoelectronic devices owing to the wide bandgap and transparency. The low-temperature growth of ZnO thin films expands diverse applications, such as growth on glass and organic materials, and it is also cost effective. However, the optical and electrical properties of ZnO films grown at low temperatures may be inferior owing to their low crystallinity and impurities. In this study, ZnO thin films were prepared by atomic layer deposition on SiO2 and glass substrates in the temperature range of 46-141℃. All films had a hexagonal würtzite structure. The carrier concentration and electrical conductivity were also investigated. The low-temperature grown films showed similar carrier concentration (a few 1019 cm-3 at 141°C), but possessed lower electrical conductivity compared to high-temperature (>200°C) grown films. The optical transmittance of 20 nm thin ZnO film reached approximately 90% under visible light irradiation. Additionally, bandgap energies in the range of 3.23-3.28 eV were determined from the Tauc plot. Overall, the optical properties were comparable to those of ZnO films grown at high temperature.
    Źródło:
    Archives of Metallurgy and Materials; 2022, 67, 4; 1503--1506
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of thin films of high-k oxides grown by atomic layer deposition at low temperature for electronic applications
    Autorzy:
    Gieraltowska, S
    Wachnicki, Ł
    Witkowski, B S
    Godlewski, M
    Guziewicz, E
    Powiązania:
    https://bibliotekanauki.pl/articles/173591.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    high-k oxides
    composite layers
    atomic layer deposition
    transparent electronics
    zinc oxide
    Opis:
    Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In this work, we present the comparison of structural, morphological and electrical properties of binary and composite layers of high-k oxides that include hafnium dioxide (HfO2), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). We deposit thin films of high-k oxides using atomic layer deposition (ALD) and low growth temperature (60–240 °C). Optimal technological growth parameters were selected for the maximum smoothness, amorphous microstructure, low leakage current, high dielectric strength of dielectric thin films, required for gate applications. High quality of the layers is confirmed by their introduction to test electronic structures, such as thin film capacitors, transparent thin film capacitors and transparent thin film transistors. In the latter structure we use semiconductor layers of zinc oxide (ZnO) and insulating layers of high-k oxide grown by the ALD technique at low temperature (no more than 100 °C).
    Źródło:
    Optica Applicata; 2013, 43, 1; 17-25
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition
    Autorzy:
    Kim, D.
    Kim, D. H.
    Riu, D.-H.
    Choi, B. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/353808.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    atomic layer deposition
    tin oxide
    growth rate
    film density
    optical band gap
    Opis:
    Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature.
    Źródło:
    Archives of Metallurgy and Materials; 2018, 63, 2; 1061-1064
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
    Autorzy:
    Ryu, Sung Yeon
    Yun, Hee Ju
    Lee, Min Hwan
    Choi, Byung Joon
    Powiązania:
    https://bibliotekanauki.pl/articles/2049285.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    gadolinium oxide
    Gd2O3
    rare-earth oxide
    atomic layer deposition
    hydrophobicity
    electrical property
    Opis:
    Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.
    Źródło:
    Archives of Metallurgy and Materials; 2021, 66, 3; 755-758
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Abrasion Resistance Test of the Modified Ti13Nb13Zr Alloy Surface
    Badanie odporności na ścieranie zmodyfikowanej powierzchni stopu Ti13Nb13Zr
    Autorzy:
    Lisoń-Kubica, Julia
    Taratuta, Anna
    Antonowicz, Magdalena
    Basiaga, Marcin
    Powiązania:
    https://bibliotekanauki.pl/articles/27310187.pdf
    Data publikacji:
    2023
    Wydawca:
    Stowarzyszenie Inżynierów i Techników Mechaników Polskich
    Tematy:
    titanium alloys
    ALD method
    Atomic Layer Deposition
    surface modification
    bone system
    antibacterial coatings
    stopy tytanu
    ALD
    modyfikacja powierzchni
    układ kostny
    powłoki antybakteryjne
    Opis:
    The research describes an atomic layer deposition (ALD) coating method and its application on a new generation of titanium alloy (Ti13Nb13Zr) for biomedical applications. The study aimed to assess the physicochemical properties and mechanics of a titanium alloy coated with titanium oxide (TiO2) or aluminium oxide (Al2O3) using the ALD method. The physicochemical properties of the surface coatings were evaluated through microscopic observations, potentiodynamic tests, surface wettability tests, optical profilometry scratch tests, and abrasion tests. Based on the data obtained, different physicochemical properties of the alloy with titanium nitride and titanium oxide coatings were found. Such differences were dependent on the number of cycles used and the temperature of the manufacturing process. The coatings have reduced the abrasion coefficient, thus improving the abrasion resistance of the Ti13Nb13Zr alloy, which enables their use within the skeletal system. These findings are of practical importance for applying this type of surface modification to various types of miniaturised implants used in the skeletal system.
    Badania polegają na opisaniu metody osadzania powłok atomowych i możliwości jej zastosowania na stopie tytanu nowej generacji do zastosowań biomedycznych. Celem pracy jest ocena wpływu właściwości fizyko chemicznych i mechanicznych zmodyfikowanego stopu Ti13Nb13Zr powłoką tlenku tytanu (TiO2) oraz tlenku glinu (Al2O3) przy użyciu metody ALD. W ramach oceny własności fizykochemicznych tak powstałych powłok powierzchniowych przeprowadzono obserwacje mikroskopowe (SEM), badania potencjodynamiczne, badania zwilżalności powierzchni, profilometrię optyczną, scratch test oraz badania ścieralności powłok. Na podstawie uzyskanych danych stwierdzono zróżnicowane własności fizykochemiczne stopu z powłokami tlenku glinu oraz tlenku tytanu w zależności od zastosowanej ilości cykli oraz temperatury procesu wytwarzania. Powłoki mają obniżony współczynnik ścieralności, poprawiając tym samym odporność na ścieranie stopu Ti13Nb13Zr, co umożliwia ich zastosowanie w układzie kostnym. Uzyskana na tej podstawie wiedza ma znaczenie praktyczne dla zastosowania tego typu modyfikacji powierzchni dla różnych rodzajów zminiaturyzowanych implantów znajdujących swoje zastosowanie w układzie kostnym.
    Źródło:
    Tribologia; 2023, 2; 55--64
    0208-7774
    Pojawia się w:
    Tribologia
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Thin Coatings Formed by ALD Techniques on the Properties of Ti13Nb13Zr Titanium Alloy
    Wpływ cienkich powłok wytwarzanych techniką ALD na właściwości stopu tytanu Ti13nb13zr
    Autorzy:
    Piotrowska, Katarzyna
    Madej, Monika
    Powiązania:
    https://bibliotekanauki.pl/articles/2116059.pdf
    Data publikacji:
    2022
    Wydawca:
    Stowarzyszenie Inżynierów i Techników Mechaników Polskich
    Tematy:
    ALD technique
    Atomic Layer Deposition
    friction
    hardness
    surface texture
    titanium alloys
    wear
    technika osadzania warstw atomowych
    ALD
    stopy tytanu
    struktura geometryczna powierzchni
    tarcie
    twardość
    zużycie
    Opis:
    The article evaluates the properties of oxide films: Al2O3 and TiO2, deposited using the ALD method on the Ti13Nb13Zr alloy. It presents the results of examining the geometrical structure of the surface, nanohardness and tribological tests. The surface’s geometrical structure was tested through optical microscopy, and nanohardness was determined using the instrumental indentation method with a Berkovich indenter. The modelling tribological tests were performed in a reciprocating motion under the conditions of technically dry friction and with lubrication using Ringer's solution. An analysis of the results of tribological tests indicates that the films were characterised by lower motion resistances and wear with respect to the Ti13Nb13Zr alloy. Hardness measurements indicate that, as a result of deposition of the films, the hardness increased by approximately 51% in the case of the Al2O3 film and by approximately 44% in the case of the TiO2 coating. The produced test results constitute a source of knowledge about the Ti13Nb13Zr alloy, oxide films and the possibilities of their potential application to low-load biotribological systems.
    W artykule dokonano oceny właściwości warstw tlenkowych: Al2O3 i TiO2 osadzonych metodą ALD na stopie Ti13Nb13Zr. Przedstawiono wyniki badań struktury geometrycznej powierzchni, nanotwardości oraz testów tribologicznych. Strukturę geometryczną powierzchni zbadano przy użyciu mikroskopii optycznej, a nanotwardość określono metodą instrumentalnej indentacji przy użyciu wgłębnika Berkovich’a. Modelowe badania tribologiczne przeprowadzono w ruchu posuwisto-zwrotnym w warunkach tarcia technicznie suchego oraz ze smarowaniem płynem Ringera. Analiza wyników badań tribologicznych wskazała, że powłoki charakteryzowały się mniejszymi oporami ruchu oraz zużyciem w odniesieniu do stopu Ti13Nb13Zr. Pomiary twardości wskazują, że w wyniku osadzenia powłok twardość wzrosła o około 51% w przypadku powłoki Al2O3 oraz o około 44% w przypadku powłoki TiO2. Uzyskane wyniki badań stanowią źródło wiedzy na temat stopu Ti13Nb13Zr, powłok tlenkowych oraz możliwości ich potencjalnego zastosowania w niskoobciążonych systemach biotribologicznych.
    Źródło:
    Tribologia; 2022, 1; 65--73
    0208-7774
    Pojawia się w:
    Tribologia
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigations of CrN/TiO2 coatings obtained in a hybrid PVD/ALD method on Al-Si-Cu alloy substrate
    Autorzy:
    Staszuk, Marcin
    Powiązania:
    https://bibliotekanauki.pl/articles/2204527.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    ALD
    PVD
    hybrid coatings
    TiO2
    aluminum alloys
    corrosion resistant
    atomic layer deposition
    physical vapor deposition
    powłoki hybrydowe
    stopy aluminium
    osadzanie warstw atomowych
    fizyczne osadzanie z fazy gazowej
    odporność na korozję
    Opis:
    The paper addresses an important scientific topic from the utilitarian point of view concerning the surface treatment of Al-Si-Cu aluminum alloys by PVD/ALD hybrid coating deposition. The influence of the conditions of deposition of titanium oxide in CrN/TiO2 coatings on their structure and properties, in particular corrosion resistance, were investigated. The TiO2 layer was produced by the atomic layer deposition (ALD) method with a variable number of cycles. Structural investigations were performed using scanning and transmission electron microscopy (SEM and TEM), atomic force microscopy (AFM), and Raman spectroscopy methods. Electrochemical properties were analyzed using potentiodynamic and electrochemical impedance spectroscopy (EIS) methods. The CrN/TiO2 hybrid coating with titanium oxide deposited at 500 ALD cycles showed the best corrosion properties. It was also found that the prerequisite for obtaining the best electrochemical properties was the amorphous structure of titanium oxide in the tested hybrid coatings. The high tribological properties of the tested coatings were also confirmed.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2023, 71, 2; art. no. e144622
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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