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    Wyświetlanie 1-14 z 14
    Tytuł:
    Oscillations in Magnetoresistance and Interlayer coupling in Magnetic Sandwich Structures
    Autorzy:
    Barnaś, J.
    Bułka, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955443.pdf
    Data publikacji:
    1997-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Jn
    72.15.Gd
    Opis:
    Kubo formalism is used to calculate the magnetoresistance due to magnetization rotation in a structure consisting of two magnetic films separated by a nonmagnetic layer. In the approximation of a uniform relaxation time for each layer, the oscillatory term in magnetoresistance corresponds to the oscillation period which depends on the potential barriers at the interfaces. This period is longer than the oscillation period observed in the coupling parameter.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 2; 253-256
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quasiclassical Theory of Spin-Valve Magnetoresistance: Role of Spin-Flip Scattering
    Autorzy:
    Baksalary, O. M.
    Barnaś, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955445.pdf
    Data publikacji:
    1997-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Jn
    72.15.Gd
    Opis:
    The Boltzmann kinetic equation is used to analyse the in-plane electronic transport in magnetic multilayers. Both diffuse and electron-momentum-conserving spin-flip scattering processes are included. Numerical results show that the momentum-conserving scattering processes reduce the spin-valve magnetoresistance.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 2; 261-264
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Budd-Vannimenus Theorem and Work Function Expression for a Metal-Metallic Adlayer System
    Autorzy:
    Peisert, J.
    Wojciechowski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931367.pdf
    Data publikacji:
    1994-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.10.+x
    73.40.Jn
    Opis:
    The generalization of the Budd-Vannimenus theorem for jellium model of metal surface, when the positive background is described by a non-negative function, is given. Using the displacement electron density profile method and the generalized Budd-Vannimenus theorem it is shown that work function expressions given on the basis of Koopmans theorem and by Monnier et al. are equivalent both for a clean metal and for a metal covered by a metallic adlayer.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 6; 979-983
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Correlated Roughness Effects in the Giant Magnetoresistance of Magnetic Multilayers
    Autorzy:
    Palasantzas, G.
    Barnaś, J.
    De Hosson, J. Th. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013095.pdf
    Data publikacji:
    2000-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Gd
    73.40.Jn
    Opis:
    Interface roughness effects on the giant magnetoresistance in magnetic multilayers are analysed theoretically for structures with non-conformal correlated interfaces. The roughness of each interface is described in terms of the K-correlation model and is characterized by the roughness exponent H(0≤H<1), correlation length ξ, and rms roughness amplitude Δ. Coherent scattering by different interfaces is also taken into account.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 3; 495-498
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Point-Contact Spectroscopy
    Autorzy:
    Jansen, A. G. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920956.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.10.-d
    73.40.Jn
    Opis:
    In a small metallic constriction ("point contact") the transport of electrons is ballistic. The applied voltage V tunes a well-defined non-equilibrium energy eV of electrons. The nonlinear current-voltage characteristics can be used to perform energy-resolved spectroscopy of the inelastic scattering of electrons with elementary excitations in metal (e.g. phonons, magnons, crystal-field levels, paramagnetic impurities). The basic elements of the point--contact method and its applications will be discussed. In recent point-contact experiments the observed phenomena (weak localization, resistance fluctuations) need a description that goes beyond the classical Boltzmann approach of electronic transport in a point contact. In analogy to observed effects in the diffusive transport in mesoscopic systems, these phenomena are explained by considering quantum-interference effects in the ballistic transport near the contact region related to the wave character of the electrons.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 539-550
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications
    Autorzy:
    Al-Ghamdi, A.
    Al-Hartomy, O.
    Gupta, R.
    El-Tantawy, F.
    Taskan, E.
    Hasar, H.
    Yakuphanoglu, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1489876.pdf
    Data publikacji:
    2012-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Jn
    81.05.Fb
    73.30.+y
    Opis:
    We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using $SiO_2$ and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and $SiO_2$. It is seen that the ideality factor (1.82) of the $Al//p-Si//SiO_2//DNA//Ag$ diode is lower than that (3.31) of the $Al//p-Si//SiO_2//Ag$ diode. This indicates that the electronic performance of DNA/Si junction was better than that of $SiO_2//Si$ junction. The interface states of the $Al//p-Si//SiO_2//DNA//Ag$ and $Al//p-Si//SiO_2//Ag$ junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 3; 673-677
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Point-Contact Spectroscopy of Ce$\text{}_{1-x}$RE$\text{}_{x}$Ni$\text{}_{5}$ (RE = Pr, Nd)
    Autorzy:
    Kačmárová, T.
    Reiffers, M.
    Garcia Soldevilla, J.
    Goméz Sal, J. C.
    Espeso, J. I.
    Blanco, J. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013409.pdf
    Data publikacji:
    2000-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Jn
    71.70.Ch
    71.70.Gm
    Opis:
    We report on the study of the electron-quasiparticle interaction function in Ce$\text{}_{1-x}$RE$\text{}_{x}$ Ni$\text{}_{5}$ (RE = Pr, Nd) pseudobinary compounds for x = 0, 0.2, 0.5, 0.8, and 1 measured by means of point-contact spectroscopy. The measured point-contact spectra (d$\text{}^{2}$V/dI$\text{}^{2}$ - directly proportional to the electron- quasiparticle interaction function) of the heterocontacts between Ce$\text{}_{1-x}$ RE$\text{}_{x}$Ni$\text{}_{5}$ and Cu in the ballistic regime are presented.zapisz i p
    Źródło:
    Acta Physica Polonica A; 2000, 97, 5; 795-798
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Conductance of Mesoscopic Magnetic Systems
    Autorzy:
    Krompiewski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011205.pdf
    Data publikacji:
    2000-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Jn
    75.70.-i
    75.70.Pa
    73.23.Ad
    Opis:
    Theoretical studies of electrical conductance of various nanowires are performed within the framework of a semi-realistic s-d tight-binding model. The presented results concern both homogeneous paramagnetic and ferromagnetic systems as well as trilayers composed of 2 magnetic slabs separated by a nonmagnetic spacer. On the one hand, in the case of the homogeneous systems the attention is focused on conductance quantization, which manifests itself when a contact gets open and conduction decays in a spectacular stepwise way. A new approach is developed by assuming that in the last stage of the breaking of the contact between wires there are fewer and fewer, distributed at random, conduction paths passing through the nanowire cross-section. The corresponding conductances are calculated within the quasiballistic regime, using the Kubo formula and a recursion Green function technique. The results for weak ferromagnets (when both majority and minority bands intersect the Fermi surface) are qualitatively different from those for strong ferromagnets (only the minority bands do), which may explain experimental cumulative conductance histograms of Fe and Ni. On the other hand, giant magnetoresistances of magnetic trilayers are studied for both current-perpendicular-to-plane and current-in-plane geometries. The corresponding magnetoresistances are compared with each other and with the interlayer exchange coupling.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 1; 15-24
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron Transport and Point Contact Spectroscopy of Cubic DyCu$\text{}_{5}$
    Autorzy:
    Nenkov, K.
    Idzikowski, B.
    Ilkovic, S.
    Kačmarčiková, E.
    Reiffers, M.
    Müller, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013688.pdf
    Data publikacji:
    2000-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Eh
    72.15.Eb
    73.23.Ad
    73.40.Jn
    Opis:
    The electron transport properties and point contact spectra of melt-spun DyCu$\text{}_{5}$ with the cubic phase (structure type AuBe$\text{}_{5}$, space group $F\overline{4}3m$) were investigated. It was found by ac-susceptibility measurements that below a transition temperature T$\text{}_{m}$=6.5 K this phase shows metamagnetism. Between T$\text{}_{m}$ and T$\text{}_{C}$=14.5 K a spontaneous magnetization is found. Our measurements of electrical resistivity confirm the existence of two magnetic phase transitions in the compound. Furthermore, we present point contact spectra of DyCu$\text{}_{5}$-Cu heterocontacts which are directly proportional to the electron-quasiparticle interaction function. Apart from a peak at about 18 meV, which is characteristic of electron-phonon interaction in pure Cu, we observed a series of additional maxima at lower energy, which are connected with the allowed 4f-transitions from the ground state to excited crystalline electric field levels.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 5; 843-846
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs
    Autorzy:
    Havare, A.
    Okur, S.
    Yagmurcukardes, N.
    Can, M.
    Aydin, H.
    Seker, M.
    Demic, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400033.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Hb
    73.20.Mf
    73.21.-b
    73.22.-f
    73.25.+i
    73.40.Ei
    73.40.Jn
    73.40.Ns
    Opis:
    In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current-voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 456-458
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Current Fluctuations in Single Barrier Vertical GaAs/AlAs/GaAs Tunneling Devices
    Autorzy:
    Przybytek, J.
    Baj, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047380.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Td
    73.40.Gk
    73.43.Jn
    Opis:
    We report the experimental results of the low temperature (T = 4.2 K) low-frequency current fluctuations measurements in the single-barrier resonant tunneling GaAs/AlAs/GaAs device with Siδ-doping in the center of the 10 nm thick AlAs barrier. The dimensions of the device were 200μm by 200μm. For the biasing voltages 0.1 V<|U|<1 V we observed the Fano factors between F = 0.7 and F = 0.95. We explain it by the existence of the trapping centers/imperfections/resonant levels inside the barrier participating in the transport for this range of voltages. Only for the smallest biasing voltages the Fano factor tends to F = 1, expected for a highly nontransparent barrier.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 221-226
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Group Delay in Semiconductor Structures with Energy Dependent Effective Mass
    Autorzy:
    Kočinac, S.
    Milanović, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047876.pdf
    Data publikacji:
    2007-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    03.65.Xp
    73.21.Fg
    73.40.Gk
    73.43.Jn
    Opis:
    We investigate tunneling times of a particle with energy dependent effective mass for a one-dimensional real potential. General relations between phase, group and dwell times are obtained for a desired potential shape. For the textbook case of a real rectangular potential barrier the explicit relations for relevant times are derived, which reveal that the nonparabolicity, depending on the energy of incident particle, may substantially increase the group time in realistic structures. Further, we extend this theory to the case of absorptive media described by complex potentials, via introduction of a new absorptive tunneling time τ$\text{}_{a}$. Depending on whether the short wavelength or long wavelength limit is considered, maximization of τ$\text{}_{a}$ results in a very different shape of a complex rectangular potential.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 5; 1037-1042
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors
    Autorzy:
    Cola, A.
    Nabet, B.
    Chen, X.
    Quaranta, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041621.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.60.-q
    73.40.Sx
    06.60.Jn
    Opis:
    In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 14-25
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, Optical, and Electrical Studies on Pulse Plated $AgInSe_2$ Films
    Autorzy:
    Murugan, S.
    Murali, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205200.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    73.61.Jc
    88.40.hj
    88.40.jn
    Opis:
    In this work, the pulse electrodeposition technique was employed for the first time to deposit $AgInSe_2$ films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM $SeO_2$. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 $Ω$/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to $AgInSe_2$. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 $Ω$ cm to 12.4 $Ω$ cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/$AgInSe_2$ solar cells increased with duty cycle.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 727-731
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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