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Tytuł:
Electrical Properties of Lead Phthalocyanine Films
Autorzy:
Abd El-Rehim, N.
El-Samahy, A.
Powiązania:
https://bibliotekanauki.pl/articles/1946191.pdf
Data publikacji:
1996-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
Opis:
Current density-voltage characteristics have been obtained from thin films of lead phthalocyanine particles dispersed in a polymer binder when sandwiched between ohmic gold and blocking aluminium electrodes. At low voltages, the current in the forward direction shows Schottky diode behaviour. The diode parameters are evaluated using the model of Cheung and Cheung. Barrier heights and widths are determined as a function of applied voltage. A number of parameters is evaluated on the basis of the theory of space-charge-limited conduction, and the following values are obtained: p$\text{}_{0}$ = 8.5 × 10$\text{}^{18}$ m$\text{}^{-3}$, concentration of the traps per unit energy range at the valence band P$\text{}_{0}$ ≈ 2.5 × 10$\text{}^{44}$ J$\text{}^{-1}$m$\text{}^{-3}$, temperature parameter of trapping distribution T$\text{}_{c}$ ≈ 500 K and total trapping concentration, N$\text{}_{t}$ ≈ 1.7 × 10$\text{}^{24}$ m$\text{}^{-3}$.
Źródło:
Acta Physica Polonica A; 1996, 90, 3; 557-564
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction
Autorzy:
Kreshchuk, A. M.
Novikov, S. V.
Savel'ev, I. G.
Polyanskaya, T. A.
Pődör, B.
Reményi, G.
Kovács, Gy.
Powiązania:
https://bibliotekanauki.pl/articles/1991650.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
Opis:
The energy relaxation in two-dimensional electron gas in In$\text{}_{0.53}$Ga$\text{}_{0.47}$As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h$\text{}_{14}$=(1.1±0.1)×10$\text{}^{7}$ V/cm. Available data for the piezoelectric constant of In$\text{}_{x}$Ga$\text{}_{1-x}$As are discussed in the light of the results of this work.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 415-420
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties in 2,6-Diamino Anthraquinone
Autorzy:
Khalil, S. M.
Darwish, S.
Powiązania:
https://bibliotekanauki.pl/articles/1931351.pdf
Data publikacji:
1994-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
Opis:
Current density-voltage characteristics were obtained from 2,6-diamino anthraquinone samples using ohmic aluminium electrodes. Results showed that at low voltage the conduction process was ohmic, while at high voltage space-charge-limited conduction controlled by a single dominant trap level was presented. Thickness dependence measurements proved that the trapping sites were located at a discrete energy level. The transition voltage, V, between ohmic and space-charge-limited conduction was approximately proportional to the square of the sample thickness and was found to be temperature independent. The temperature dependence of ohmic and space-charge-limited current densities have been investigated. The results were interpreted in terms of extrinsic nature of ohmic conduction. Traps with density ≈ 2 × 10$\text{}^{24}$ m$\text{}^{-3}$ located at 0.50 ± 0.03 eV below the conduction band edge have been observed.
Źródło:
Acta Physica Polonica A; 1994, 85, 6; 953-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Transitional Metals Doping on Conductivity of Collagen Lyophilisate and Elastin
Autorzy:
Gauza, M.
Kubisz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1490449.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
72.80.Le
Opis:
Knowing that conductivity is a temperature function σ = f(T) allows us to estimate the thermal stability of collagen preparations from fish skin. Measurements can provide information, which is crucial for technologies applying this type of collagen. Conductivity σ measurements were performed in a constant electric field E = 1 kV/m, in the temperature range of 290-480 K. White collagen lyophilisate was used as control material. It contained neither elastin nor melanin dopants nor non-organic dopants such as gold, copper, silver or zinc. Gold, copper, silver and zinc belong to the group of transitional metals and they have intermediate properties of both alkaline metals and metals in the p block of the periodic table. The common feature of most of these elements is their ability to form coordination complexes of intense color. In the measured materials peaks were found in the temperature range of 303-323 K. Peak temperature and its shape depend on the type of material. In the case of nano-gold doping a drop in peak temperature and a decrease in conductivity were observed. The measured materials are characterized by lower thermal resistance than bovine collagen. Nevertheless, thermal stability of fish skin collagen is high enough for fish skin collagen to replace bovine collagen. The measurement results obtained for white collagen and white collagen with $Zn^{2+}$ may indicate better bonding of free water. The presence of nano-silver and nano-copper as doping agents in graphite collagen may lead to a decrease in hygroscopy of the material and, as a result, may increase its resistance to bacteria.
Źródło:
Acta Physica Polonica A; 2012, 121, 1A; A-065-A-067
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Conductivity of Fish Skin Collagen in the Temperature Range 290-380 K
Autorzy:
Gauza, M.
Kubisz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1537417.pdf
Data publikacji:
2010-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
72.80.Le
Opis:
Collagen is the major biopolymer of a living organism, which physical properties depend on water content. The observed transmission of spongiform encephalophaties (BSE) to humans resulted in the development of new sources of collagen. Fish skin seems to be one of such safe sources of collagen. Measurements of electrical conductivity as a function of temperature provides information, among other things, on the water release process. Experiment was carried out for fish skin (FSC) collagen (type I) and bovine Achilles tendon collagen (type I). Each sample was heated two times. Current-voltage characteristic was determined for FSC collagen to determine the range, within which the relation is linear. The primary differences appeared to be in electric conductivity, which was higher for FSC collagen than for BAT collagen. Electric conductivity varied from 10^{-6} S/m to 10^{-10} S/m depending on material and temperature. The process of free and bound water release was manifested as a peak on electrical conductivity-temperature curve between 320-350 K. The activation energy of the charge conduction process, determined on the basis of the Arrhenius plot, was material dependent and considerably higher for FSC collagen.
Źródło:
Acta Physica Polonica A; 2010, 118, 1; 54-57
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Dielectric Properties of Amorphous Ge$\text{}_{1}$Se$\text{}_{1.35}$TL$\text{}_{0.1}$ Films
Autorzy:
Abdel-Aziz, M. M.
Afifi, M. A.
Labib, H. H.
El-Metwally, E. G.
Powiązania:
https://bibliotekanauki.pl/articles/2014346.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ng
72.20.-i
Opis:
The temperature dependence of the DC and AC electrical conductivity were measured for Ge$\text{}_{1}$Se$\text{}_{1.35}$Tl$\text{}_{0.1}$ films. The value of DC electrical conduction energy ΔE$\text{}_{σ}$ does not depend on film thickness in the investigated range with mean value of 0.72eV. The AC conductivity σ$\text{}_{AC}$ is related to frequency by the expression σ$\text{}_{AC}$=Aω$\text{}^{S}$, where S is the frequency exponent which decreases linearly with increasing temperature. This can be explained in terms of the pair (bipolaron) correlated barrier hopping model suggested by Elliott. The frequency and temperature dependence of real and imaginary parts of the dielectric constant were studied for Ge$\text{}_{1}$Se$\text{}_{1.35}$Tl$\text{}_{0.1}$ films. The dielectric constant (real part) and the dielectric loss (imaginary part) increase with increasing temperature and decrease with increasing frequency in the investigated range of frequency and temperature. The maximum barrier height W$\text{}_{M}$ can be calculated according to the Giuntini equation at different temperatures. The obtained value of W$\text{}_{M}$ is in good agreement with the theory of hopping of charge carriers over a potential barrier as suggested by Elliott in case of chalcogenide glasses.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 393-399
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Oxygen Impurities on Electrical Properties of Fullerene C$\text{}_{60}$
Autorzy:
Rabenau, T.
Roth, S.
Kremer, R. K.
Powiązania:
https://bibliotekanauki.pl/articles/1933397.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.80.Le
72.20.-i
Opis:
We present high temperature dc, ac and contactless microwave conductivity results on solid-state C$\text{}_{60}$ (films and crystals) from room temperature up to 850 K. Heating pristine samples, which were exposed to the ambient atmosphere, under dynamic vacuum at first leads to a reduction of the electrical resistance and finally, above ≈700 K, to an increase in the resistance. The decrease is ascribed to oxygen desorption and the increase to the chemical reactivity of residual chemisorbed oxygen with the C$\text{}_{60}$ host molecules, respectively. Samples, annealed above 800 K, display a reversible temperature dependence of the resistance. The high temperature regime of their resistance exhibits an activated behaviour with an universal activation energy of 2E$\text{}_{a}$ = 1.85 ± 0.04 eV for crystals and films, which is identical to the HOMO-LUMO splitting of the C$\text{}_{60}$-molecules.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 881-884
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photovoltaic Effect and Space Charge Limited Current Analysis in $TlGaTe_2$ Crystals
Autorzy:
Qasrawi, A.
Yaseen, T.
Eghbariy, B.
Gasanly, N.
Powiązania:
https://bibliotekanauki.pl/articles/1419787.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
72.20.Ht
72.40.+w
Opis:
Anisotropic space charge limited current density analysis and photovoltaic effect in $TlGaTe_2$ single crystals has been investigated. It is shown that, above 330 K, the crystal exhibits intrinsic and extrinsic type of conductivity along (c-axis) and perpendicular (a-axis) to the crystal's axis, respectively. The current density (J) is found to be space charge limited. It is proportional to the square and three halves power of voltage (V) along the a- and c-axis, respectively. Along the a-axis and at sufficiently low electric field values, the activation energy of the current density is found to depend on the one half power of electric field. At high electric fields, the activation energy is field invariant. This behavior is found to be due to the Pool-Frenkel effect and due to a trap set located at 0.26 eV, respectively. Along the c-axis the crystal is observed to operate under the Child-Langmuir space charge limited regime. $TlGaTe_2$ crystals are found to exhibit photovoltaic properties. The open circuit photovoltage is recorded as a function of illumination intensity at room temperature.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 152-155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Free Carrier Scattering in Metallic n-GaAs in the Presence of Static Lattice Distortions Due to a Partial Chemical Order of Impurities
Autorzy:
Słupiński, T.
Molas, M.
Papierska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791426.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.sd
61.72.uj
72.20.-i
Opis:
Simple electric transport versus T = 20-400 K in metallic n-GaAs annealed single crystals with Te impurity concentration ∿(0.4-1.7) × $10^{19} cm^{-3}$, which is above the equilibrium doping limit, is reported and compared with modern theory of electron mobility in degenerated n-GaAs by Szmyd, Hanna, Majerfeld. An overcome of the equilibrium doping limit in annealed n-GaAs is manifested by a lowered electrical activation of Te donors and by an onset of ≈ 0.1-1 μm regions of local strain in the crystal lattice known from high resolution X-ray studies. These preliminary results of transport show that the electron mobility μ(T) measured for n-GaAs with local strains is not consistent with predictions of Szmyd et al. model for any degree of compensation assumed. This surprising result indicates that electric transport in materials above the equilibrium doping limit is not well understood assuming the scattering by ionized impurities. The nature of defects responsible for an observed strong reduction of free carrier concentration (here ≈ 80%) in annealed heavily doped n-GaAs seems not to be related with electrical compensation. We point here at the possible role of effects of free carrier scattering due to static lattice distortions (local strains) related to a chemical aggregation of impurity atoms. We also notice that transport in metallic n-GaAs with local strains shows features similar to a weak localization $σ_{xx}$ ∝ log T.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 979-982
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices
Autorzy:
Zhao, H.
Wang, Y.
Xu, Z.
Xu, X.
Powiązania:
https://bibliotekanauki.pl/articles/2011094.pdf
Data publikacji:
1999-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
78.60.-b
Opis:
Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.
Źródło:
Acta Physica Polonica A; 1999, 96, 3-4; 475-482
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices
Autorzy:
Zhao, H.
Wang, Y.
Xu, X.
Powiązania:
https://bibliotekanauki.pl/articles/2014087.pdf
Data publikacji:
2000-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.-b
72.20.-i
Opis:
In this paper, an analytical band model is introduced in Monte Carlo simulation of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential method is fitted by using polynomials. The density of states and scattering rates are also calculated from these polynomials. Based on these results, the electric transport process in ZnS-type thin film electroluminescent devices is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and density of states are all important in the simulation.
Źródło:
Acta Physica Polonica A; 2000, 98, 1-2; 123-130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Annealing on the AC Conductivity and the Dielectric Properties of In$\text{}_{2}$Te$\text{}_{3}$ Thin Films
Autorzy:
Afifi, M. A.
Abd El-Wahabb, E.
Bekheet, A. E.
Atyia, H. E.
Powiązania:
https://bibliotekanauki.pl/articles/2014347.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.+f
72.20.-i
Opis:
In$\text{}_{2}$Te$\text{}_{3}$ thin films were prepared by thermal evaporation technique. The composition of the films is checked by energy dispersive X-ray analysis. X-ray analysis showed that the as-deposited In$\text{}_{2}$Te$\text{}_{3}$ films as well as films annealed at temperatures ≤473K have crystalline structure. The ac conductivity σ$\text{}_{ac}$(ω), the dielectric constant ε$\text{}_{1}$ and the dielectric loss ε$\text{}_{2}$ of In$\text{}_{2}$Te$\text{}_{3}$ films were studied in the temperature range 303-373K and in the frequency range 100Hz-100kHz. The ac conduction activation energy ΔE$\text{}_{σ}$(ω) was found to be 0.065eV for the as-deposited films. The ac conductivity was found to obey the relation σ$\text{}_{ac}$(ω)=Aω$\text{}^{s}$, where s is the frequency exponent. The obtained temperature dependence of s is reasonably interpreted by quantum mechanical tunneling model. Both the dielectric constant ε$\text{}_{1}$ and the dielectric loss ε$\text{}_{2}$ increased with temperature and decreased with frequency in the investigated range. The frequency and temperature dependencies of σ$\text{}_{ac}$(ω), ε$\text{}_{1}$, and ε$\text{}_{2}$ for the annealed samples have the same behavior as that for the as-deposited samples. However, values of σ$\text{}_{ac}$(ω), ε$\text{}_{1}$, and ε$\text{}_{2}$ measured at any frequency and temperature increased with annealing temperature up to 473K. It was found also that ΔE$\text{}_{σ}$(ω) decreased with annealing temperature.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 401-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Novel Organic Semiconductor BTQBT with High Conductivity and High Mobility
Autorzy:
Inokuchi, H.
Imaeda, K.
Powiązania:
https://bibliotekanauki.pl/articles/1943958.pdf
Data publikacji:
1995-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
72.20.-i
Opis:
We have found a novel organic semiconductor, BTQBT, with a high electrical conductivity of about 10$\text{}^{-3}$ S cm$\text{}^{-1}$ and a high Hall mobility of about 3 cm$\text{}^{2}$ V$\text{}^{-1}$s$\text{}^{-1}$ at room temperature. We have also succeeded in measuring the temperature dependence of the Hall mobility. It varies with temperature as Τ$\text{}^{-1.6}$, which agrees with the theoretical Τ$\text{}^{-1.5}$ dependence for the mobility determined by lattice scattering. The characteristic transport property of BTQBT results from strong intermolecular interactions in the crystal, which is convinced by the energy dispersion with a bandwidth of about 0.5 eV from the theoretical and experimental band structures.
Źródło:
Acta Physica Polonica A; 1995, 88, 6; 1161-1170
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Energy Spectrum of Single-Hole States in Transition Metal Oxides
Autorzy:
Lehmann-Szweykowska, A.
Wojciechowski, R. J.
Gehring, G. A.
Powiązania:
https://bibliotekanauki.pl/articles/2013222.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Fd
72.20.-i
Opis:
The p-d hybridised single-hole states of the transition-metal-oxygen tetrahedron (TMO$\text{}_{4}$) are collectivised due to the direct p-p hopping between oxygens of different clusters. The lowest-lying energy band is always narrow and fully occupied. The first excited band gets occupied as an effect of valence-uncompensated doping, so it can be almost localised. The possible hole excitations to the two higher energy bands, which are wider, may imply the Mott-like hopping form of charge transport in these systems.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 563-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlation between the band-gap energy and the electrical conductivity in MPr₂W₂O₁₀ tungstates (where M = Cd, Co, Mn)
Autorzy:
Sawicki, B.
Tomaszewicz, E.
Piątkowska, M.
Groń, T.
Duda, H.
Górny, K.
Powiązania:
https://bibliotekanauki.pl/articles/1160256.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
72.20.-i
72.80.Sk
Opis:
The values of the direct allowed energy gap determined from the UV-vis-NIR measurements and Kubelka-Munk transformation decrease from 3.38 via 2.70 to 2.42 eV for MPr₂W₂O₁₀ in the sequence M = Cd, Co, Mn, while the values of the activation energy increase from 0.11 via 0.44 to 0.47 eV in the same sequence. In other words, the higher the activation energy, the smaller the energy gap. Because the energy gap is typical for insulators, so electron transport phenomena are considered under the Poole-Frenkel effect and small-polaron mechanism.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-94-A-96
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Characteristics of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ Heterostructure Photodiode
Autorzy:
Ahmetoglu, M.
Kucur, B.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1401231.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
73.40.Kp
72.40.+w
Opis:
In the present paper, electrical and optical properties of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1007-1009
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC
Autorzy:
Suproniuk, M.
Kamiński, P.
Kozłowski, R.
Pawłowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1364028.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
71.55.-i
72.20.-i
Opis:
A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the $Z_{1/2}$ center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1042-1048
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vertical Electron Transport in GaN/AlGaN Heterostructures
Autorzy:
Reklaitis, A.
Powiązania:
https://bibliotekanauki.pl/articles/1178371.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Kp
72.20.-i
72.30.+q
Opis:
Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under certain composition, geometry and doping profile, the GaN/AlGaN heterostructures may become bipolar, i.e., the inversion layers may originate at heterointerfaces due to strong built-in electric fields, which are induced by polarization charges.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 261-266
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AC Electrical Conductivity and Dielectric Properties of Perovskite $(Pb,Ca)TiO_3$ Ceramic
Autorzy:
El-Mallah, H.
Powiązania:
https://bibliotekanauki.pl/articles/1419850.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.45.Gm
72.20.-i
72.80.-r
Opis:
$Pb_{1 - x }Ca_{x}TiO_3$ perovskite crystalline structure with x = 0, 0.2, 0.6, 0.7, and 0.8 were prepared by mixture method. The ac conductivity and dielectric properties of the studied bulk compositions have been investigated in the frequency range $1 \times 10^3 - 5 \times 10^6 Hz$ and temperature range 303-473 K. The experimental results indicate that the ac conductivity $\sigma_{ac}(\omega),$ dielectric constant ε' and dielectric loss ε" depend on the temperature and frequency. The ac conductivity was found to obey the power law $\omega^{S}$ with the frequency exponent S > 1 decreasing with increasing temperature. The present results are compared to the principal theories that describe the universal dielectric response behavior. Values of dielectric constant ε' and dielectric loss ε" were found to be temperature and frequency dependent and the maximum barrier height $W_{m}$ is calculated.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 174-179
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Concentration Anomalies of Properties in Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te Solid Solutions
Autorzy:
Rogacheva, E. I
Sinelnik, N. A
Nashchekina, O. N.
Powiązania:
https://bibliotekanauki.pl/articles/1929740.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ji
72.20.-i
71.45.-d
Opis:
The investigation of electrical conductivity, coefficient of thermal electromotive force, Hall coefficient, microhardness and mobility in Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te (x = 0 ÷ 0.1) alloys in the temperature range of 77-300 K was carried out. Anomalies were detected in isotherms of properties in the vicinity of x = 0.008. The anomalies were treated as a manifestation of concentration phase transitions occurring in solid solutions of any kind and associated with existence of critical concentration (percolation threshold) at which the uninterrupted chain of interactions between impurity atoms is formed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 729-732
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in IV-VI Semiconductors
Autorzy:
Dyrdał, A.
Dugaev, V.
Barnaś, J.
Brodowska, B.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1810533.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
75.50.Pp
72.25.Dc
Opis:
We consider theoretically the topological contribution to the anomalous Hall effect in narrow-gap IV-VI magnetic semiconductors in which the relativistic terms are relatively large and determine both the non-parabolicity of the energy spectrum and strong spin-orbit interaction. We use the relativistic Dirac model and linear response theory to calculate this contribution. Experimental data on the anomalous Hall effect in these compounds are also presented and discussed.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 287-289
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling
Autorzy:
Aleshkin, V.
Reggiani, L.
Rosini, M.
Powiązania:
https://bibliotekanauki.pl/articles/1179729.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.70.+m
72.20.-i
72.30.+q
73.23.Ad
Opis:
The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 298-303
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Complex Impedance Investigation of Epitaxial LCMO Thin Films
Autorzy:
Mateev, E.
Nurgaliev, T.
Blagoev, B.
Powiązania:
https://bibliotekanauki.pl/articles/1205437.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
72.80.Ga
72.90.+y
73.61.Le
Opis:
Epitaxial $La_{0.67}Ca_{.33}MnO_3$ (LCMO) thin films by off-axis magnetron sputtering were deposited on $SrTiO_3$ (STO) substrates. Complex impedance measurements (module and phase of the thin film impedance) in frequency range 1-30 kHz are done. Substantial dependence of both: module and phase of the complex surface impedance is observed. The temperature interval scanned is from 77 K to room temperature. The impedance has inductive behavior for temperatures less than the Curie temperature and capacitive for higher temperatures. Reduction of the film thickness from 60 to 30 nm shifts the impedance curves to the lower temperatures.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 787-789
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroconductive and Dielectric Properties of Composites Based on Bismuth Vanadate
Autorzy:
Torba, J.
Golubko, N.
Fortalnova, E.
Kaleva, G.
Safronenko, M.
Venskovskii, N.
Politova, E.
Powiązania:
https://bibliotekanauki.pl/articles/1549689.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Tm
77.22.Ch
72.20.-i
61.72.-y
Opis:
Ceramic composites $(100 - n)Bi_{4}V_{2}O_{11-z}-nCe_{0.9}Gd_{0.1}O_{1.9}$ with n=0÷25 wt% were prepared and studied by the X-ray diffraction, dielectric spectroscopy, and impedance methods. Slight increase in the unit cell volume accompanied by monotonous decrease in temperatures and broadening of the α-β and β-γ phase transitions with increasing fluorite content was observed in the composites studied. Increase in melting temperatures of composites with n ≥ 10 with the retention of their high ionic conductivity was also proved.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 24-26
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic and Transport Properties of R$\text{}_{3}$Cu$\text{}_{3}$Sb$\text{}_{4}$ Compounds (R = La, Ce, Pr, Nd, and Sm)D
Autorzy:
Skolozdra, R.
Baran, M.
Horyn, A.
Szewczyk, A.
Gorelenko, Yu.
Szymczak, H.
Szymczak, R.
Powiązania:
https://bibliotekanauki.pl/articles/2035550.pdf
Data publikacji:
2002-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.-v
72.20.-i
72.15.Jf
75.30.Cr
Opis:
Magnetic susceptibility, electrical resistivity, and thermopower of the series of the R$\text{}_{3}$Cu$\text{}_{3}$Sb$\text{}_{4}$ compounds (R=La-Sm) were measured over the temperature ranges 1.9-300 K (susceptibility and resistivity) and 80-370 K (thermopower). Below 25 K, resistivity of these compounds grows exponentially with decreasing temperature. For some compounds, R = Ce, Sm, a maximum on temperature dependence of resistivity is observed. Ce$\text{}_{3}$Cu$\text{}_{3}$Sb$\text{}_{4}$ compound undergoes a magnetic transition at 12 K.
Źródło:
Acta Physica Polonica A; 2002, 102, 3; 429-435
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-25 z 65

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