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Wyświetlanie 1-15 z 232
Tytuł:
Vertex Corrections to the Electrical Conductivity of the Disordered Falicov-Kimball Model
Autorzy:
Pokorný, V.
Janiš, V.
Powiązania:
https://bibliotekanauki.pl/articles/1534607.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Fd
71.28.+d
72.10.Fk
Opis:
Quantum coherence of elastically scattered lattice fermions is studied. We calculate vertex corrections to the electrical conductivity of electrons scattered either on thermally equilibrated or statically distributed random impurities and we demonstrate that the sign of the vertex corrections to the Drude conductivity is in both cases negative.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 922-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Valence Band of Cubic Semiconductors from Viewpoint of Clifford Algebra
Autorzy:
Dargys, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807789.pdf
Data publikacji:
2009-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.-m
72.25.Dc
75.10.Jm
85.75.-d
Opis:
In this paper the properties of semiconductors having cubic symmetry are considered in a real multidimensional Euclidean space within the formalism of multivector Clifford algebra rather than, usually used for this purpose, complex Hilbert space. In particular, it is demonstrated how the valence band energy spectrum and spin properties may be calculated within $Cl_5$ Clifford algebra and SO(5) symmetry group related with it.
Źródło:
Acta Physica Polonica A; 2009, 116, 2; 226-231
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Universal Relations in the Attractive Hubbard Model with Next-Nearest Neighbor Hopping
Autorzy:
Bak, M.
Powiązania:
https://bibliotekanauki.pl/articles/2046748.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.Fy
71.10.Fd
74.20.Fg
71.27.+a
72.10.-d
Opis:
Recently a new universal relation between superfluid densityρ$\text{}_{s}$ andσ$\text{}_{dc}$T$\text{}_{c}$, where σ$\text{}_{dc}$ is direct current conductivity and T$\text{}_{c}$ - superconducting critical temperature, was found by Homes et al. (Nature 430, 539 (2004)). The theoretical derivation of the relation based on BCS theory is correct only qualitatively. In the present paper this relation is calculated theoretically, using Hartree-Fock approximation and second-order perturbation theory. It is found that although correct qualitatively, quantitatively the results are too small. Inclusion of the second neighbor hopping improves the results.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 565-568
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrathin Glass for the Photovoltaic Applications
Autorzy:
Dziedzic, J.
Inglot, M.
Powiązania:
https://bibliotekanauki.pl/articles/1032413.pdf
Data publikacji:
2017-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.60.Jt
71.20.Nr
72.40.+w
42.70.-a
85.60.-q
Opis:
Chemically strengthened ultrathin glass with a thickness of less than 1 mm has many advantages, such as flexibility, smooth surface, good transmittance, excellent gas and water barrier, much higher toughened in relations to thermally tempered glass, higher impact resistance, increased corrosion resistance and much higher abrasion rate. Chemical strengthening process is a process where an ion exchange occurs by diffusion between the glass panes and the brine solution bath. The deeper penetration of the glass surface by ions contained in the brine bath contributes to the hardness of the glass sheets, which reduces the occurrence of surface defects that cause reflections. From the point of view of photovoltaic applications ultrathin glass significantly reduces the weight of the whole photovoltaic panel structure with respect to known solutions. Furthermore, the reduction of the glass thickness increases the transmission of solar energy in the visible range directly through the glass. In addition, chemical tempered glass has a lower reflectance of light from the surface than the thermally tempered glass. What is more, ultrathin glass is perfect substrate for deposition of nanomaterials, i.e. conductive films or quantum dots. In this work we demonstrate that chemically strengthened ultrathin glass is a perfect material for the photovoltaic applications, i.e. as a substrate for deposition of thin layers and for the design of photovoltaic modules of reduced weight.
Źródło:
Acta Physica Polonica A; 2017, 132, 1; 176-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors
Autorzy:
Shatkovskis, E.
Galickas, A.
Kiprijanovič, O.
Powiązania:
https://bibliotekanauki.pl/articles/2041752.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.70.Jv
07.57.Yb
42.62.Hk
Opis:
A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value I$\text{}_{c}$=5×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for InAs and (1-4)×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration t$\text{}_{opt}$ 1-10 ps the photomagnetoelectric signal in the terahertz range may be generated.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 271-274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrafast Dynamics and Quantum Transport of Electrons in Strongly Disordered Semiconductors
Autorzy:
Kalvová, A.
Velický, B.
Powiązania:
https://bibliotekanauki.pl/articles/1933801.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.-s
72.10.-d
78.47.+p
Opis:
The new experiments on the response of electrons in semiconductors to femtosecond optical pulses call for developing adequate theoretical tools. A promising approach has been found in using the non-equilibrium Green functions approximately factorized on the basis of the so-called generalized Kadanoff-Baym ansatz. The present work investigates the validity of such approach on an example of a semiconductor with an alloy scattering, where the coherent potential approximation allows to construct the non-equilibrium Green functions directly, so that an explicit comparison with the ansatz decoupling is possible. The ansatz for the electron distribution is in this case justified as far as the quasiparticle picture for the individual electrons is appropriate.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 767-770
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Component Density Functional Study of Positron-Vacancy Interaction in Metals and Semiconductors
Autorzy:
Ishibashi, S.
Powiązania:
https://bibliotekanauki.pl/articles/1033953.pdf
Data publikacji:
2017-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
78.70.Bj
61.72.jd
Opis:
The positron-vacancy interaction in metals and semiconductors has been studied by the two-component density-functional-theory formalism. If a positron is not trapped at the vacancy, atoms surrounding the vacancy show inward relaxation for most cases except for nitrides, where outward relaxation is observed. The presence of positron suppresses the inward relaxation. Positron lifetimes have been calculated with and without the positron effect. The difference between two lifetime values is investigated in relation to the bulk modulus.
Źródło:
Acta Physica Polonica A; 2017, 132, 5; 1602-1605
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Trapping of Charge Carriers in Organic Molecular Materials: Phthalocyanine Thin Films Revisited
Autorzy:
Zhivkov, I.
Nešpurek, S.
Sworakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2030420.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Rv
72.20.Jv
72.80.Le
73.61.Ph
Opis:
The technique of temperature-modulated space-charge-limited currents was employed to study the energetic distribution of local states in thin films of metal-free phthalocyanine. Four well-defined local levels were detected within the energy range 0.5-0.3 eV, accompanied by an onset to a manifold of shallower states. The morphology of the films, depending on the deposition rate and changing from polycrystalline to nearly amorphous, affects the densities of local states but not their energies.
Źródło:
Acta Physica Polonica A; 2001, 100, Supplement; 215-228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Trapping Center Parameters in TlInS$\text{}_{2}$ Layered Crystals by Thermally Stimulated Current Measurements
Autorzy:
Yuksek, N. S.
Gasanly, N. M.
Ozkan, H.
Karci, O.
Powiązania:
https://bibliotekanauki.pl/articles/2038188.pdf
Data publikacji:
2004-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Jc
Opis:
Thermally stimulated current measure ments are carried out on TlInS$\text{}_{2}$ layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS$\text{}_{2}$ crystal in the low-temperature region.
Źródło:
Acta Physica Polonica A; 2004, 106, 1; 95-103
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Trapping Center Parameters in N-Implanted $Tl_2Ga_2S_3Se$ Single Crystals by Thermally Stimulated Currents Measurements
Autorzy:
Yildirim, T.
Gasanly, N.
Turan, R.
Powiązania:
https://bibliotekanauki.pl/articles/1400156.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.80.Jc
Opis:
As-grown $Tl_2Ga_2S_3Se$ crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of $1 \times 10^{16} \text{ions}//cm^2$. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as $3.9 \times 10^{-20} cm^2$. Also the concentration of the traps was estimated to be $8.0 \times 10^{11} cm^{-3}$.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 766-769
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111)
Autorzy:
Pustelny, B.
Pustelny, T.
Powiązania:
https://bibliotekanauki.pl/articles/1807750.pdf
Data publikacji:
2009-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.61.Ey
73.61.Jc
85.30.-z
71.20.Mq
Opis:
The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near-surface region and the surface potential $V_{s}$ in GaP:Te(111) surfaces after their different technological treatments were determined.
Źródło:
Acta Physica Polonica A; 2009, 116, 3; 383-384
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties of the Au-Al-Yb Quasicrystal and Approximant under Hydrostatic Pressure
Autorzy:
Matsukawa, S.
Tanaka, K.
Nakayama, M.
Kunikata, S.
Deguchi, K.
Imura, K.
Ishimasa, T.
Sato, N.
Powiązania:
https://bibliotekanauki.pl/articles/1373322.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
72.15.Eb
75.50.Kj
Opis:
The mixed-valence Au-Al-Yb quasicrystal exhibits unusual quantum criticality. Its crystalline approximant behaves like a conventional heavy fermion metal. Due to these novel features, they have attracted much attention recently. To examine the sample dependence of this new type of materials, we have prepared several samples and measured the electrical resistivity both at ambient and high pressures as well as the magnetic susceptibility at ambient pressure. The residual resistivity ratio of the quasicrystals is almost sample independent while the power law exponent n of the electrical resistivity varies from sample to sample. The effective magnetic moment $p_{eff}$ of the quasicrystals is also sample dependent, ranging from about 3.4 to 3.9 $μ_{B}$/Yb, and these values are all smaller than the free $Yb^{3+}$ ion value, confirming the mixed-valence nature. Although the magnitude of n and $p_{eff}$ is sample-dependent, the principal feature of the mixed-valence is confirmed in all the samples studied thus far. A combination of these results indicates correlation between n and $p_{eff}$, suggesting that the 4f electrons may contribute to a scattering mechanism of the conduction electrons. External pressure increases the magnitude of the electrical resistivity and decreases the index n of both the quasicrystal and the approximant. Up to the highest pressure measured in the present study no experimental evidence for a phase transition was found.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 527-530
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
Autorzy:
Lewińska, S.
Gryglas-Borysiewicz, M.
Przybytek, J.
Baj, M.
Jouault, B.
Gennser, U.
Ouerghi, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047930.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
71.20.Nr
73.23.Hk
73.63.Hs
72.10.Di
85.30.Mn
73.40.Gk
Opis:
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 606-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transformation of Native Defects in GaAs under Ultrasonic Treatment
Autorzy:
Mąkosa, A.
Wosiński, T.
Witczak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1861348.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ji
62.80.+f
71.55.Eq
Opis:
Effect of high-intensity ultrasonic vibration on the spectrum of deep electron traps in bulk GaAs has been studied giving rise to a discussion on microscopic structure of native defects associated with the traps.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 653-656
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermoelectric Properties of Heavy Fermion Compound Ce₃Co₄Sn₁₃
Autorzy:
Witas, P.
Kalinowski, L.
Goraus, J.
Fijałkowski, M.
Ślebarski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1385439.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
72.15.Eb
72.15.Jf
Opis:
The heavy fermion compound Ce₃Co₄Sn₁₃ was studied in terms of its thermoelectric properties. To enhance its figure of merit we milled the solid sample and then pressed to obtain a consistent granulated material. The main properties, such as the Seebeck coefficient, thermal conductivity and electronic resistivity were measured at low (< 300 K) temperatures for both, the solid and the granulated sample. Thermal conductivity was diminished and the Seebeck coefficient was slightly enhanced, while the resistivity of produced material was increased. We explain it by strong electron scattering on defects and grain boundaries present in the sample. The resulting figure of merit ZT was found to be enhanced almost across the whole measured T region.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 309-311
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 232

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