Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "68.65.Fg" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-12 z 12
    Tytuł:
    Experimental Investigation of Hot Carriers in Terahertz Quantum Cascade Lasers
    Autorzy:
    Scamarcio, G.
    Vitiello, M.
    Spagnolo, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813187.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    68.65.Fg
    Opis:
    The nature of the electron distribution and the electron-lattice energy relaxation phenomena in all classes of quantum cascade lasers operating in the THz range, namely, resonant-phonon, bound-to-continuum, and interlaced photon-phonon designs are reviewed. Thermalized hot-electron distributions are found in all cases. However, electronic temperatures of individual conduction subband are strongly influenced by the specific quantum design and the actual electron-lattice energy relaxation channels. A wealth of information was obtained both below and above laser threshold from the analysis of micro-probe band-to-band photoluminescence spectra recorded with a spatial resolution of ≈2 μm. The influence of the detailed knowledge of the hot electron distributions on the design of improved THz quantum cascade lasers aiming at high temperature operation will be discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 787-794
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM
    Autorzy:
    Ivaldi, F.
    Kret, S.
    Szczepańska, A.
    Czernecki, R.
    Kryśko, M.
    Grzanka, S.
    Leszczyński, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048084.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.bg
    68.37.Lp
    68.65.Fg
    Opis:
    Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 660-662
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique
    Autorzy:
    Jia, Guo-Zhi
    Yao, Jiang-Hong
    Shu, Yong-Chun
    Xing, Xiao-Dong
    Pi, Biao
    Powiązania:
    https://bibliotekanauki.pl/articles/1808036.pdf
    Data publikacji:
    2009-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    68.55.Ln
    68.65.Fg
    68.65.Cd
    Opis:
    The superlattice-in-well structures were grown using a cycled submonolayer AlGaAs/GaAs deposition technique. The optical quality of Al-Ga interdiffusion in AlGaAs/GaAs superlattice was investigated by measuring the photoluminescence of samples grown at temperature from 610°C to 630°C. Results show that Al composition can be modulated under some growth temperature or period. Effect of the growth interrupt in the growth process of superlattice on film optical quality is also discussed. Especially, the role played by the period of superlattice in the process of obtaining high quality film material with low composition is investigated in detail.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 5; 944-946
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission Canals for the Photon-Assisted Transport of Electron through the Double-Barrier Resonant Tunneling Structure
    Autorzy:
    Tkach, M.
    Seti, Ju.
    Voitsekhivska, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399516.pdf
    Data publikacji:
    2013-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.10.-d
    73.63.Hs
    68.65.Fg
    Opis:
    The resonance and non-resonance transmission canals of double-barrier resonant tunneling structure are established for the electron-photon system using the exact solution of one-dimensional non-stationary Schrödinger equation expanded into the Fourier range. It is shown that besides the main and satellite, the mixed quasi-stationary states which cause the appearance of specific transmission canals with the properties strongly dependent on the intensity and frequency of electromagnetic field, exist in the nanostructure.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 1; 94-101
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Relativistic Paschen-Back Effect for the Two-Dimensional H-Like Atoms
    Autorzy:
    Poszwa, A.
    Rutkowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538608.pdf
    Data publikacji:
    2010-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    03.65.Pm
    03.65.Ge
    31.15.-p
    68.65.Fg
    Opis:
    The classification of states based on good quantum numbers for the two-dimensional Coulomb problem is proposed. The first order magnetic energy corrections are calculated using exact field-free analytic solutions of the Dirac equation as a zero-order approximation.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 3; 439-444
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
    Autorzy:
    Gronin, S.
    Sorokin, S.
    Kazanov, D.
    Sedova, I.
    Klimko, G.
    Evropeytsev, E.
    Ivanov, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376051.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    78.55.Et
    78.67.Hc
    68.65.Fg
    Opis:
    This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1096-1099
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
    Autorzy:
    Borysiuk, J.
    Wysmołek, A.
    Bożek, R.
    Strupiński, W.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811916.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Lp
    78.55.-m
    61.72.Nn
    68.65.Fg
    61.72.up
    Opis:
    Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1067-1072
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Siekacz, M.
    Kryśko, M.
    Feduniewicz-Żmuda, A.
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Nevou, L.
    Kheirodin, N.
    Julien, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811923.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.De
    68.65.Fg
    73.21.Fg
    81.15.Hi
    Opis:
    GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1093-1099
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Nevou, L.
    Doyennette, L.
    Julien, F. H.
    Prystawko, P.
    Kryśko, M.
    Grzanka, S.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046911.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Fg
    78.66.-w
    78.67.De
    78.40.Fy
    81.15.Hi
    Opis:
    Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 175-181
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers
    Autorzy:
    Vorobjev, L.
    Firsov, D.
    Shalygin, V.
    Panevin, V.
    Sofronov, A.
    Ustinov, V.
    Zhukov, A.
    Egorov, A.
    Andrianov, A.
    Zakhar'in, A.
    Ganichev, S.
    Danilov, S.
    Kozlov, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813218.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Fg
    71.55.-i
    71.55.Eq
    73.21.Fg
    73.61.Ey
    78.55.Cr
    78.66.-w
    78.67.De
    Opis:
    We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 925-928
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Charge Compensation of Heteropolar SiC/GaN Interfaces
    Autorzy:
    Sznajder, M.
    Majewski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399077.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.-p
    68.35.Ct
    68.47.Fg
    68.65.-k
    Opis:
    We present studies of the morphology and charge distribution at the 4H-SiC/wz-GaN heteropolar junctions. Our investigations are based on the first principles calculations in the framework of the density functional theory where the interfaces between the SiC substrate and GaN layers are represented by means of a slab. These studies reveal possible charge compensation patterns at the interfaces that lead to charge redistribution from monopole to dipole character and increase the stability of the junctions. It turns out that the interfaces with C-Ga and Si-Ga bonds across the junction and reconstructions involving substitution of group IV elements into Ga layer are the most favorable energetically.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 772-774
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure Characterization and Catalytic Properties of Cr$\text{}_{2}$O$\text{}_{3}$ Doped with MgO Supported on MgF$\text{}_{2}$
    Autorzy:
    Goslar, J.
    Wojciechowska, M.
    Zieliński, M.
    Tomska-Foralewska, I.
    Przystajko, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043607.pdf
    Data publikacji:
    2005-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.Fc
    68.43.Fg
    82.65.+r
    Opis:
    A characterization of double oxide systems containing Cr$\text{}_{2}$O$\text{}_{3}$ doped with MgO and supported on MgF$\text{}_{2}$ was carried out. The catalysts were prepared by impregnation and co-impregnation methods and characterized by the Brunauer-Emmett-Teller method, EPR, and temperature programmed reduction. The results proved the interactions between supported oxides and the presence of spinel-like phase after treatment at 400ºC. Magnesium oxide clearly influences the catalytic activity as well as selectivity of chromium catalysts supported on MgF$\text{}_{2}$. The MgO-Cr$\text{}_{2}$O$\text{}_{3}$/MgF$\text{}_{2}$ systems were active and selective in the reaction of CO oxidation at the room temperature and in the dehydrogenation of cyclohexene.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 2; 323-330
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-12 z 12

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies