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Wyświetlanie 1-15 z 32
Tytuł:
Acousto-electric interaction in magnetised piezoelectric semiconductor quantum plasma
Autorzy:
Ghosh, S.
Muley, A.
Powiązania:
https://bibliotekanauki.pl/articles/1058496.pdf
Data publikacji:
2016-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.50.+b
52.35.-g
61.72.uj
77.65.-j
Opis:
Amplification of an acoustic wave is considered in magnetised piezoelectric n-type semiconductor plasma under quantum hydrodynamic regime. The important ingredients of this study are the inclusion of quantum diffraction effect via the Bohm potential, statistical degeneracy pressure, and externally applied magnetostatic field in the momentum balance equation of the charged carriers. A modified dispersion relation is derived for evolution of acoustic wave by employing the linearization technique. Detailed analysis of quantum modified dispersion relation of acoustic wave is presented. For a typical parameter range, relevant to n-InSb at 77 K, it is found that the non-dimensional quantum parameter H reduces the gain while magnetic field enhances the gain of acoustic wave. The crossover from attenuation to amplification occurs at (ϑ₀/ϑₛ)=1 and this crossover point is found to be unaffected by quantum correction and magnetic field. It is also found that the maximum gain point shifts towards lower drift velocity regime due to the presence of magnetic field while quantum parameter H shifts this point towards higher drift velocity. Numerical results on the acoustic gain per radian and acoustic gain per unit length are also illustrated. Our results could be useful in understanding acoustic wave propagation in magnetised piezoelectric semiconductor in quantum regime.
Źródło:
Acta Physica Polonica A; 2016, 130, 6; 1401-1405
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Interaction of Surfactant Molecules with Si(hkl) Planes on the Basis of Anisotropic Etching in Alkaline Solutions
Autorzy:
Zubel, I.
Kramkowska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807532.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.30.Hn
61.72.uj
64.70.kg
Opis:
In the paper, measurements of surface tension of solutions used for silicon etching and results of etching in the solutions are presented. Based on the obtained results, the analysis of interactions of surfactants with differently oriented silicon planes has been carried out.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-105-S-107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anharmonicity Effects in Nanocrystals Studied by Raman Scattering Spectroscopy
Autorzy:
Dohčević-Mitrović, Z.
Popović, Z.
Šćepanović, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807800.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.22.-m
78.67.Bf
78.30.-j
61.72.uj
Opis:
Phonon-phonon interactions were investigated in various nanocrystalline powders like anatase $TiO_{2-δ}$, pure $CeO_{2-δ}$ and ceria doped with Nd(Gd) analyzing temperature dependent Raman spectra of these systems. Phonon confinement model based on size, inhomogeneous strain and anharmonic effects was used to properly describe the evident changes present in the Raman spectra of pure and doped ceria nanocrystalline samples. In small particles of pure and doped ceria nanocrystals, when size effects have minor impact on Raman modes, four phonon anharmonic processes prevail under the three-phonon ones. When nanopowdered particles are grown enough size effects provoke changes of the anharmonic interactions when three-phonon coupling prevails over the four-phonon anharmonic processes. In nanocrystalline anatase $TiO_2$ evident blueshift of the most prominent $E_g$ Raman mode probably originates from dominant four-phonon anharmonic interactions.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 36-41
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1382904.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of $Ne^{+}$ ions (D=1.5 × $10^{14}$ $cm^{-2}$, E=100 keV). On the basis of results obtained for samples annealed at the temperature $T_{a}$=598 K and measured at the testing temperature $T_{p}$=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1392-1395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy
Autorzy:
Zubiaga, A.
Tuomisto, F.
Zúñiga-Pérez, J.
Muñoz-San José, V.
Powiązania:
https://bibliotekanauki.pl/articles/1811964.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
68.55.Ln
68.37.-d
78.70.Bj
Opis:
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high $10^{17} cm^{-3}$ to low $10^{17} cm^{-3}$) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about $2×10^{17} cm^{-3}$ in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1257-1264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Chemical Composition of Native Oxide Layers on $In^{+}$ Implanted and Thermally Annealed GaAs
Autorzy:
Kulik, M.
Kołodyńska, D.
Żuk, J.
Komarov, F.
Filiks, J.
Powiązania:
https://bibliotekanauki.pl/articles/1400486.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
79.60.-i
82.80.Yc
Opis:
Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of $3 \times 10^{16} cm^{-2}$. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction $O^{16}(α,α)O^{16}$ method. The chemical composition of native oxide layers on $In^{+}$ implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. $As_{2}O_{3}$, $As_{2}O_{5}$, $Ga_{2}O_{3}$, $GaAs$, $InAs$ and $InAsO_4$ compounds were detected in these layers.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 943-947
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deposition and Characterization of CdS, CuS and ZnS Thin Films Deposited by SILAR Method
Autorzy:
Guzeldir, B.
Saglam, M.
Ates, A.
Powiązania:
https://bibliotekanauki.pl/articles/1490738.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.-a
61.05.cp
61.72.uj
Opis:
Cadmium sulfide, copper sulfide and zinc sulfide films were grown on Si(111) substrate by successive ionic layer adsorption and reaction method at room temperature. The crystalline structure and morphology of obtained films were characterized by X-ray diffraction, scanning electronic microscope and energy dispersive X-ray analysis methods. The films were polycrystalline and showed preferred orientation. The surface morphology of these films looked relatively smooth and homogeneous in the scanning electron microscope image. The energy dispersive X-ray analysis spectra showed that the expected elements exist in the thin films.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 33-35
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
Autorzy:
Ishikawa, Y.
Yao, Y.
Sato, K.
Sugawara, Y.
Danno, K.
Suzuki, H.
Bessho, T.
Kawai, Y.
Shibata, N.
Powiązania:
https://bibliotekanauki.pl/articles/1492539.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
81.65.Cf
68.37.Lp
Opis:
Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-025-A-027
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function of Native Oxide on Ion-Implanted GaAs
Autorzy:
Kulik, M.
Rzodkiewicz, W.
Gluba, Ł.
Kobzev, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400489.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.20.Ci
78.20.-e
Opis:
The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with $Ne^{+}$, $Al^{+}$, $Ar^{+}$, or $In^{+}$ ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of $1 \times 10^{16} cm^{-2}$ at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 956-959
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of $Fe^{2+} (Fe^{3+})$ Doping on Structural Properties οf $CeO_2$ Nanocrystals
Autorzy:
Radović, M.
Dohčević-Mitrović, Z.
Paunović, N.
Šćepanović, M.
Matović, B.
Popović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1807838.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.30.-j
75.50.Tt
Opis:
We have measured the Raman scattering and magnetization of pure and $Fe^{2+}(Fe^{3+})$ doped $CeO_2$ nanopowders at room temperature. The Raman scattering spectra revealed the existence of $CeO_2$ fluorite cubic structure for all investigated samples. The Raman active mode at about 600 $cm^{-1}$, seen in all samples, can be ascribed to the $CeO_2$ intrinsic oxygen vacancies. Additional Raman modes at 720 $cm^{-1}$, 1320 $cm^{-1}$ and 1600 $cm^{-1}$, which appear in the spectra of doped samples, can be assigned to maghemite $(γ-Fe_2O_3)$ cation deficient structure, to $2ω_{LO}$ IR-allowed overtone and two magnon structure, respectively. This implies that our powders are composed of mixed valence states and have defective structure. Presence of oxygen defect states and magnetic ions can be responsible for the observed ferromagnetism at room temperature in both pure and Fe doped samples.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 84-87
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Cu Negative Ion Implantation on Physical Properties of $Zn_{1-x}Mn_xTe$ Films
Autorzy:
Pogrebnjak, A.
Shypylenko, A.
Amekura, H.
Takeda, Y.
Opanasyuk, A.
Kurbatov, D.
Kolotova, I.
Klymov, O.
Kozak, C.
Powiązania:
https://bibliotekanauki.pl/articles/1400485.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.72.uj
Opis:
The paper deals with the investigations of structural properties of $Zn_{1-x}Mn_xTe$ films, which were fabricated under various deposition conditions using the thermal evaporation method in a closed volume. The surface morphology of the samples was studied, the phase analysis of their structures was performed, the elemental analysis of the films and the crystal lattice constant were investigated. The texture perfection of the films before and after copper ion implantation was evaluated.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 939-942
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Stress on Defect Transformation in $B^{+}$ and $Ag^{+}$ Implanted HgCdTe/CdZnTe Structures
Autorzy:
Savkina, R.
Smirnov, A.
Gudymenko, A.
Kladko, V.
Sizov, F.
Frigeri, C.
Powiązania:
https://bibliotekanauki.pl/articles/1363515.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
81.16.Rf
Opis:
The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) $Hg_{1-x}Cd_{x}Te$ (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses $(B^{+}$ and $Ag^{+})$ leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × $10^3$ Pa and 2.2 × $10^5$ Pa, respectively). The structural properties of the $Hg_{1-x}Cd_{x}Te$ epilayers were investigated using X-ray high-resolution reciprocal space mapping.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1003-1005
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrochemical Performance of SnO₂ and SnO₂/MWCNT/Graphene Composite Anodes for Li-Ion Batteries
Autorzy:
Cevher, O.
Akbulut, H.
Powiązania:
https://bibliotekanauki.pl/articles/1032560.pdf
Data publikacji:
2017-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
81.15.Cd
82.47.Aa
Opis:
In this study, tin oxide (SnO₂) coatings on Cr coated stainless steel and multi-walled carbon nanotube (MWCNT)/graphene substrates were prepared using a radio frequency magnetron sputtering process as anode materials in lithium-ion batteries. SnO₂ thin film and SnO₂/MWCNT/graphene composite were characterized with field-emission scanning electron microscopy, X-ray diffraction, and electrochemical tests (cyclic voltammetry and galvanostatic cycling). The electrochemical properties of SnO₂ and SnO₂/MWCNT/graphene composite anodes were studied using 2016-type coin cells assembled in an argon-filled glove box. The cells were cyclically tested on a MTI BST8-MA battery analyzer. The cyclic voltammograms of SnO₂ anode and SnO₂/MWCNT/graphene composite anode were obtained over the potential range of 0.05-3.0 V and 0.05-2.5 V at a scan rate of 0.05 mV s¯¹, respectively.
Źródło:
Acta Physica Polonica A; 2017, 131, 1; 204-206
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Free Carrier Scattering in Metallic n-GaAs in the Presence of Static Lattice Distortions Due to a Partial Chemical Order of Impurities
Autorzy:
Słupiński, T.
Molas, M.
Papierska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791426.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.sd
61.72.uj
72.20.-i
Opis:
Simple electric transport versus T = 20-400 K in metallic n-GaAs annealed single crystals with Te impurity concentration ∿(0.4-1.7) × $10^{19} cm^{-3}$, which is above the equilibrium doping limit, is reported and compared with modern theory of electron mobility in degenerated n-GaAs by Szmyd, Hanna, Majerfeld. An overcome of the equilibrium doping limit in annealed n-GaAs is manifested by a lowered electrical activation of Te donors and by an onset of ≈ 0.1-1 μm regions of local strain in the crystal lattice known from high resolution X-ray studies. These preliminary results of transport show that the electron mobility μ(T) measured for n-GaAs with local strains is not consistent with predictions of Szmyd et al. model for any degree of compensation assumed. This surprising result indicates that electric transport in materials above the equilibrium doping limit is not well understood assuming the scattering by ionized impurities. The nature of defects responsible for an observed strong reduction of free carrier concentration (here ≈ 80%) in annealed heavily doped n-GaAs seems not to be related with electrical compensation. We point here at the possible role of effects of free carrier scattering due to static lattice distortions (local strains) related to a chemical aggregation of impurity atoms. We also notice that transport in metallic n-GaAs with local strains shows features similar to a weak localization $σ_{xx}$ ∝ log T.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 979-982
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals
Autorzy:
Mirowska, A.
Orłowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1409657.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.10.Fq
81.10.-h
81.10.St
72.80.Ey
71.55.Eq
61.72.uj
Opis:
Gallium antimonide (GaSb) single crystals were grown by modified Czochralski method integrated with in situ synthesis in a flowing atmosphere of pure hydrogen. The influence of charge material purity as well as other technological parameters on GaSb crystals quality was investigated. High purity undoped GaSb single crystals were grown with residual acceptors concentration < 1.4 × $10^{17} cm^{-3}$ and high mobility ≈ 690 $cm^2$/Vs (at 300 K). P-type GaSb crystals were doped with silicon (carrier concentration up to 2 × $10^{19} cm^{-3}$) and with zinc (up to 1 × $10^{19} cm^{-3}$). Tellurium doped n-type GaSb single crystals were obtained with concentration up to 2 × $10^{18} cm^{-3}$. Electrical parameters were investigated by the Hall measurements (300 K and 77 K). Temperature dependent Hall measurements (10 ÷ 300 K) were used to compare the quality of undoped GaSb (obtained from Sb of different purity). Dopant concentration was estimated by glow discharge mass spectroscopy analysis. Axial and radial distribution of carrier concentration were investigated especially for Te-doped crystals (low segregation coefficient of Te in GaSb). Great contribution of compensation and self-compensation mechanisms is shown especially for the beginning part of grown crystals and for low Te-doping level. Radial distribution of physical properties for crystals grown in 〈100〉 direction is not axisymmetrical especially for doped GaSb crystals.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1111-1114
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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