Temat: 61.72.uj - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure
Autorzy:: Pietnoczka, A.
Bacewicz, R.
Slupinski, T.
Antonowicz, J.
Wei, Su-Huai
Powiązania:: https://bibliotekanauki.pl/articles/1431547.pdf
Data publikacji:: 2012-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cj
61.72.uj
Opis:: The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional $Te_{As}$ model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium
Źródło:: Acta Physica Polonica A; 2012, 121, 4; 879-882
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Effect of Cu Negative Ion Implantation on Physical Properties of $Zn_{1-x}Mn_xTe$ Films
Autorzy:: Pogrebnjak, A.
Shypylenko, A.
Amekura, H.
Takeda, Y.
Opanasyuk, A.
Kurbatov, D.
Kolotova, I.
Klymov, O.
Kozak, C.
Powiązania:: https://bibliotekanauki.pl/articles/1400485.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
61.72.uj
Opis:: The paper deals with the investigations of structural properties of $Zn_{1-x}Mn_xTe$ films, which were fabricated under various deposition conditions using the thermal evaporation method in a closed volume. The surface morphology of the samples was studied, the phase analysis of their structures was performed, the elemental analysis of the films and the crystal lattice constant were investigated. The texture perfection of the films before and after copper ion implantation was evaluated.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 939-942
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Effect of Stress on Defect Transformation in $B^{+}$ and $Ag^{+}$ Implanted HgCdTe/CdZnTe Structures
Autorzy:: Savkina, R.
Smirnov, A.
Gudymenko, A.
Kladko, V.
Sizov, F.
Frigeri, C.
Powiązania:: https://bibliotekanauki.pl/articles/1363515.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
81.16.Rf
Opis:: The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) $Hg_{1-x}Cd_{x}Te$ (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses $(B^{+}$ and $Ag^{+})$ leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × $10^3$ Pa and 2.2 × $10^5$ Pa, respectively). The structural properties of the $Hg_{1-x}Cd_{x}Te$ epilayers were investigated using X-ray high-resolution reciprocal space mapping.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 1003-1005
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
Autorzy:: Żukowski, P.
Węgierek, P.
Billewicz, P.
Kołtunowicz, T.
Komarov, F.
Powiązania:: https://bibliotekanauki.pl/articles/1504001.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey
Opis:: The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 125-128
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process
Autorzy:: Węgierek, P.
Billewicz, P.
Powiązania:: https://bibliotekanauki.pl/articles/1402240.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey
Opis:: Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 943-945
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Free Carrier Scattering in Metallic n-GaAs in the Presence of Static Lattice Distortions Due to a Partial Chemical Order of Impurities
Autorzy:: Słupiński, T.
Molas, M.
Papierska, J.
Powiązania:: https://bibliotekanauki.pl/articles/1791426.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.sd
61.72.uj
72.20.-i
Opis:: Simple electric transport versus T = 20-400 K in metallic n-GaAs annealed single crystals with Te impurity concentration ∿(0.4-1.7) × $10^{19} cm^{-3}$, which is above the equilibrium doping limit, is reported and compared with modern theory of electron mobility in degenerated n-GaAs by Szmyd, Hanna, Majerfeld. An overcome of the equilibrium doping limit in annealed n-GaAs is manifested by a lowered electrical activation of Te donors and by an onset of ≈ 0.1-1 μm regions of local strain in the crystal lattice known from high resolution X-ray studies. These preliminary results of transport show that the electron mobility μ(T) measured for n-GaAs with local strains is not consistent with predictions of Szmyd et al. model for any degree of compensation assumed. This surprising result indicates that electric transport in materials above the equilibrium doping limit is not well understood assuming the scattering by ionized impurities. The nature of defects responsible for an observed strong reduction of free carrier concentration (here ≈ 80%) in annealed heavily doped n-GaAs seems not to be related with electrical compensation. We point here at the possible role of effects of free carrier scattering due to static lattice distortions (local strains) related to a chemical aggregation of impurity atoms. We also notice that transport in metallic n-GaAs with local strains shows features similar to a weak localization $σ_{xx}$ ∝ log T.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 979-982
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with $Ne^{+}$ Ions
Autorzy:: Węgierek, P.
Billewicz, P.
Powiązania:: https://bibliotekanauki.pl/articles/1400487.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey
Opis:: The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of $Ne^{+}$ ions (D = $1.5 \times 10^{14} cm^{-2}$, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of $T_{a}$ = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 948-951
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Influence of Temperature on Electrical Parameters of GaAs in the Aspect of Applications in Photovoltaics
Autorzy:: Węgierek, P.
Billewicz, P.
Powiązania:: https://bibliotekanauki.pl/articles/1402217.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey
Opis:: The article describes the results of the research on thermal stability of electrical parameters of n-type gallium arsenide doped with tellurium, defected by ion implantation, measured at the operating temperature ranging from 77 K to 373 K. The aim of the work is to investigate the character of changes in the values of such electrical parameters as resistivity, capacity and loss tangent of the tested GaAs samples, exposed to different thermal conditions. Temperature dependences analyzed in the paper could be taken as a basis to formulate general speculations concerning potential applications of the tested material as a substrate in the process of photovoltaic cells production. The phenomenon of conversion of solar energy into electricity is strongly connected with electrical properties of photovoltaic cell substrate material and its internal structure. Moreover, the efficiency of photoconversion is affected by such factors as charge carrier lifetime distribution and diffusion length in the base material. Therefore, it is necessary to confirm what is the character of the influence of operating temperature on the electrical parameters of GaAs and what modification could be introduced in the material in order to increase the efficiency of photoconversion.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 875-878
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with $Ne^{++}$ Neon Ions
Autorzy:: Węgierek, P.
Billewicz, P.
Powiązania:: https://bibliotekanauki.pl/articles/1504000.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey
Opis:: The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of $Ne^{++}$ neon ions. An analysis of electrical properties recorded at the annealing temperature of $T_{a}$ = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 122-124
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant
Autorzy:: Węgierek, P.
Billewicz, P.
Powiązania:: https://bibliotekanauki.pl/articles/1382904.pdf
Data publikacji:: 2014-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey
Opis:: The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of $Ne^{+}$ ions (D=1.5 × $10^{14}$ $cm^{-2}$, E=100 keV). On the basis of results obtained for samples annealed at the temperature $T_{a}$=598 K and measured at the testing temperature $T_{p}$=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
Źródło:: Acta Physica Polonica A; 2014, 125, 6; 1392-1395
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 11.

Tytuł:: Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit
Autorzy:: Tarkowski, T.
Słupiński, T.
Karpierz, K.
Powiązania:: https://bibliotekanauki.pl/articles/2048144.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.-y
61.72.uj
72.20.My
Opis:: Transverse magnetoresistance was studied in monocrystalline GaAs:Te doped above the equilibrium doping limit and annealed to partially deactivate donor impurities. It is shown that in a sample with partial deactivation of Te impurities, which exhibits structural fluctuations in microscale, both strong positive and some negative magnetoresistances arise, which are difficult to understand within the relaxation time approximation in degenerated homogeneous semiconductor. It is discussed that a consideration of the role of spatial fluctuations (in carrier concentration, conductivity, etc.), e.g. as proposed by Herring, allows for an understanding of positive component of magnetoresistance observed in the sample with a distinct microscopic structural disorder. With the aim to better understand the transport in GaAs:Te, a model material doped above the doping limit, we discuss both positive and negative components of measured magnetoresistance.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 726-728
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 12.

Tytuł:: Deposition and Characterization of CdS, CuS and ZnS Thin Films Deposited by SILAR Method
Autorzy:: Guzeldir, B.
Saglam, M.
Ates, A.
Powiązania:: https://bibliotekanauki.pl/articles/1490738.pdf
Data publikacji:: 2012-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.-a
61.05.cp
61.72.uj
Opis:: Cadmium sulfide, copper sulfide and zinc sulfide films were grown on Si(111) substrate by successive ionic layer adsorption and reaction method at room temperature. The crystalline structure and morphology of obtained films were characterized by X-ray diffraction, scanning electronic microscope and energy dispersive X-ray analysis methods. The films were polycrystalline and showed preferred orientation. The surface morphology of these films looked relatively smooth and homogeneous in the scanning electron microscope image. The energy dispersive X-ray analysis spectra showed that the expected elements exist in the thin films.
Źródło:: Acta Physica Polonica A; 2012, 121, 1; 33-35
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 13.

Tytuł:: Analysis of Interaction of Surfactant Molecules with Si(hkl) Planes on the Basis of Anisotropic Etching in Alkaline Solutions
Autorzy:: Zubel, I.
Kramkowska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1807532.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.30.Hn
61.72.uj
64.70.kg
Opis:: In the paper, measurements of surface tension of solutions used for silicon etching and results of etching in the solutions are presented. Based on the obtained results, the analysis of interactions of surfactants with differently oriented silicon planes has been carried out.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-105-S-107
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 14.

Tytuł:: Dielectric Function of Native Oxide on Ion-Implanted GaAs
Autorzy:: Kulik, M.
Rzodkiewicz, W.
Gluba, Ł.
Kobzev, A.
Powiązania:: https://bibliotekanauki.pl/articles/1400489.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
78.20.Ci
78.20.-e
Opis:: The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with $Ne^{+}$, $Al^{+}$, $Ar^{+}$, or $In^{+}$ ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of $1 \times 10^{16} cm^{-2}$ at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 956-959
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 15.

Tytuł:: Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances
Autorzy:: Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Powiązania:: https://bibliotekanauki.pl/articles/1402239.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.77.Ka
34.80.Dp
61.72.uj
Opis:: Two different designs of the internal evaporator in an arc discharge ion source are presented, suitable either for volatile, or high-melting point substances. A matter of the evaporator size and placement in order to obtain its appropriate temperature and, therefore, a stable and intense ion beam, is considered. Basic ion source characteristics, i.e. the dependences of ion current and discharge voltage on the discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The results of measurements for both volatile (P, Zn, Se, S) and non-volatile (Pd) are presented, showing the applicability of the design for ion implantation purposes.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 939-942
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 16.

Tytuł:: The Influence of Ion Implantation on the Optical Parameters - Refraction and Extinction Coefficients οf the Oxygen-Enriched Layers Covering GaAs Implanted with Indium Ions
Autorzy:: Rzodkiewicz, W.
Kulik, M.
Pyszniak, K.
Kobzev, A.
Powiązania:: https://bibliotekanauki.pl/articles/1807545.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
78.66.Qn
82.80.Yc
Opis:: The semi-isolating GaAs (100) samples irradiated with fluence 3 × $10^{15}$ ions/$cm^{2}$ of $In^{+}$ ions were characterized by using the methods: Rutherford backscattering spectroscopy, nuclear reaction analysis and ellipsometric spectroscopy. The values of the thicknesses layers enriched with oxygen and the implanted were determined by the methods of nuclear reaction analysis and Rutherford backscattering spectroscopy. Multilayer models were applied for determination of the optical constants (refraction and extinctions coefficients) of investigated samples. The thickness of native oxide covering the surface of implanted GaAs and refraction coefficients were increased after implantation with indium. The spectrum of extinction indexes as a function of light wavelength has two bands near the light wavelengths 400 nm and 480 nm. The observed effects can be interpreted as formation of local oxides of In and InAs precipitates or ternary alloys in enriched with oxygen layers at the surfaces of implanted GaAs.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-129-S-132
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 17.

Tytuł:: Effect of $Fe^{2+} (Fe^{3+})$ Doping on Structural Properties οf $CeO_2$ Nanocrystals
Autorzy:: Radović, M.
Dohčević-Mitrović, Z.
Paunović, N.
Šćepanović, M.
Matović, B.
Popović, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1807838.pdf
Data publikacji:: 2009-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
78.30.-j
75.50.Tt
Opis:: We have measured the Raman scattering and magnetization of pure and $Fe^{2+}(Fe^{3+})$ doped $CeO_2$ nanopowders at room temperature. The Raman scattering spectra revealed the existence of $CeO_2$ fluorite cubic structure for all investigated samples. The Raman active mode at about 600 $cm^{-1}$, seen in all samples, can be ascribed to the $CeO_2$ intrinsic oxygen vacancies. Additional Raman modes at 720 $cm^{-1}$, 1320 $cm^{-1}$ and 1600 $cm^{-1}$, which appear in the spectra of doped samples, can be assigned to maghemite $(γ-Fe_2O_3)$ cation deficient structure, to $2ω_{LO}$ IR-allowed overtone and two magnon structure, respectively. This implies that our powders are composed of mixed valence states and have defective structure. Presence of oxygen defect states and magnetic ions can be responsible for the observed ferromagnetism at room temperature in both pure and Fe doped samples.
Źródło:: Acta Physica Polonica A; 2009, 116, 1; 84-87
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 18.

Tytuł:: Production of $Mo^{+}$ Beams Using an Arc Discharge Ion Source
Autorzy:: Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Mączka, D.
Powiązania:: https://bibliotekanauki.pl/articles/1383005.pdf
Data publikacji:: 2014-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.77.Ka
34.80.Dp
61.72.uj
Opis:: A new method of $Mo^{+}$ ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of $CCl_4$ (or $CHCl_3$) vapor and air was used as the feeding substance. The separated $Mo^{+}$ beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
Źródło:: Acta Physica Polonica A; 2014, 125, 6; 1388-1391
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 19.

Tytuł:: Electrochemical Performance of SnO₂ and SnO₂/MWCNT/Graphene Composite Anodes for Li-Ion Batteries
Autorzy:: Cevher, O.
Akbulut, H.
Powiązania:: https://bibliotekanauki.pl/articles/1032560.pdf
Data publikacji:: 2017-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
81.15.Cd
82.47.Aa
Opis:: In this study, tin oxide (SnO₂) coatings on Cr coated stainless steel and multi-walled carbon nanotube (MWCNT)/graphene substrates were prepared using a radio frequency magnetron sputtering process as anode materials in lithium-ion batteries. SnO₂ thin film and SnO₂/MWCNT/graphene composite were characterized with field-emission scanning electron microscopy, X-ray diffraction, and electrochemical tests (cyclic voltammetry and galvanostatic cycling). The electrochemical properties of SnO₂ and SnO₂/MWCNT/graphene composite anodes were studied using 2016-type coin cells assembled in an argon-filled glove box. The cells were cyclically tested on a MTI BST8-MA battery analyzer. The cyclic voltammograms of SnO₂ anode and SnO₂/MWCNT/graphene composite anode were obtained over the potential range of 0.05-3.0 V and 0.05-2.5 V at a scan rate of 0.05 mV s¯¹, respectively.
Źródło:: Acta Physica Polonica A; 2017, 131, 1; 204-206
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 20.

Tytuł:: Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂
Autorzy:: Turek, M.
Droździel, A.
Pyszniak, K.
Filiks, J.
Prucnal, S.
Mączka, D.
Vaganov, Yu.
Węgierek, P.
Powiązania:: https://bibliotekanauki.pl/articles/1033135.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.77.Ka
34.80.Dp
61.72.uj
Opis:: A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 283-287
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 21.

Tytuł:: Thin Film Nanostructured ATO and ATO Based Composite Anodes for Li-Ion Batteries
Autorzy:: Cevher, O.
Guler, M.
Tocoglu, U.
Cetinkaya, T.
Akbulut, H.
Okumus, S.
Powiązania:: https://bibliotekanauki.pl/articles/1218094.pdf
Data publikacji:: 2014-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
88.30.rh
82.47.Aa
Opis:: In this study, antimony doped tin oxide films were deposited on multiwall carbon nanotube buckypaper and Cr coated stainless steel substrates using a radio frequency magnetron sputtering process in a mixed oxygen/argon (5/95) gas environment. The depositions of antimony doped tin oxide on the multiwall carbon nanotube buckypaper and stainless steel substrates were carried out using the parameters organized as: target composition antimony doped tin oxide ($SnO_2$:Sb = 90:10 wt%); total system pressure 1 Pa; sputtering power (RF) 100 W. The surface morphology of the antimony doped tin oxide films was investigated by field emission scanning electron microscopy. The crystallographic structure of the samples was determined by X-ray diffraction. The electrochemical properties of antimony doped tin oxide and antimony doped tin oxide-multiwall carbon nanotube nanocomposite anodes containing CR2016 cells were measured by galvanostatic charge-discharge experiments.
Źródło:: Acta Physica Polonica A; 2014, 125, 2; 296-298
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 22.

Tytuł:: Production of Doubly Charged Ions Using a Hollow Cathode Ion Source with an Evaporator
Autorzy:: Turek, M.
Droździel, A.
Pyszniak, K.
Mączka, D.
Słowiński, B.
Powiązania:: https://bibliotekanauki.pl/articles/1400444.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.77.Ka
34.80.Dp
61.72.uj
Opis:: The paper describes the production of doubly charged ions from solids and gases using a hollow cathode ion source with an internal evaporator heated by a spiral cathode filament and arc discharge. The obtained currents were 15 μA for $Bi^{2+}$, 10 μA for $As^{2+}$ and $Al^{2+}$, 8 μA for $Kr^{2+}$ and $Xe^{2+}$, 5 μA for $In^{2+}$ and $Ge^{2+}$, enabling moderate dose implantations ( ≈ $10^{15} cm^{-3}$) with doubly charged ions. Characteristics of the ion source are presented and discussed in order to choose the optimal working parameters. A brief presentation of numerical model of doubly and singly charged ions in the ion source is given. The calculated results (dependences of ion current on the anode voltage) are in good agreement with the experimental data.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 843-846
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 23.

Tytuł:: Chemical Composition of Native Oxide Layers on $In^{+}$ Implanted and Thermally Annealed GaAs
Autorzy:: Kulik, M.
Kołodyńska, D.
Żuk, J.
Komarov, F.
Filiks, J.
Powiązania:: https://bibliotekanauki.pl/articles/1400486.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
79.60.-i
82.80.Yc
Opis:: Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of $3 \times 10^{16} cm^{-2}$. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction $O^{16}(α,α)O^{16}$ method. The chemical composition of native oxide layers on $In^{+}$ implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. $As_{2}O_{3}$, $As_{2}O_{5}$, $Ga_{2}O_{3}$, $GaAs$, $InAs$ and $InAsO_4$ compounds were detected in these layers.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 943-947
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 24.

Tytuł:: Nanostructured ATO Anodes Produced by RF Magnetron Sputtering for Li-Ion Batteries
Autorzy:: Cevher, O.
Tocoglu, U.
Akbulut, H.
Powiązania:: https://bibliotekanauki.pl/articles/1401282.pdf
Data publikacji:: 2015-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
81.15.Cd
82.47.Aa
Opis:: In this study, the reversible capacities, as well as the cycling behavior, of crystalline antimony-doped tin oxide (ATO) films have been investigated. ATO films were deposited on Cr-coated stainless steel substrates by the RF magnetron sputtering technique, with antimony-doped tin oxide (SnO₂:Sb) target in a mixed oxygen/argon gas environment. The ATO films were deposited for 1.0 h in a mixture of Ar and O₂ environment with O₂/Ar ratio of 10/90, at sputtering power of 75 W, 100 W and 125 W RF. ATO films were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM). The electrochemical properties of ATO anodes were studied using 2016-type coin cells assembled in an argon-filled glove box.
Źródło:: Acta Physica Polonica A; 2015, 127, 4; 1065-1067
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 25.

Tytuł:: Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
Autorzy:: Ishikawa, Y.
Yao, Y.
Sato, K.
Sugawara, Y.
Danno, K.
Suzuki, H.
Bessho, T.
Kawai, Y.
Shibata, N.
Powiązania:: https://bibliotekanauki.pl/articles/1492539.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
81.65.Cf
68.37.Lp
Opis:: Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-025-A-027
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 26.

Tytuł:: Plasma Ion Source with an Internal Evaporator
Autorzy:: Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Mączka, D.
Powiązania:: https://bibliotekanauki.pl/articles/1504137.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.77.Ka
34.80.Dp
61.72.uj
Opis:: A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current ($I_{a}$ = 1.2 A). The currents of 50 μA $(Al^{+})$ and 70 μA $(Bi^{+})$ were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 184-187
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 27.

Tytuł:: Acousto-electric interaction in magnetised piezoelectric semiconductor quantum plasma
Autorzy:: Ghosh, S.
Muley, A.
Powiązania:: https://bibliotekanauki.pl/articles/1058496.pdf
Data publikacji:: 2016-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.50.+b
52.35.-g
61.72.uj
77.65.-j
Opis:: Amplification of an acoustic wave is considered in magnetised piezoelectric n-type semiconductor plasma under quantum hydrodynamic regime. The important ingredients of this study are the inclusion of quantum diffraction effect via the Bohm potential, statistical degeneracy pressure, and externally applied magnetostatic field in the momentum balance equation of the charged carriers. A modified dispersion relation is derived for evolution of acoustic wave by employing the linearization technique. Detailed analysis of quantum modified dispersion relation of acoustic wave is presented. For a typical parameter range, relevant to n-InSb at 77 K, it is found that the non-dimensional quantum parameter H reduces the gain while magnetic field enhances the gain of acoustic wave. The crossover from attenuation to amplification occurs at (ϑ₀/ϑₛ)=1 and this crossover point is found to be unaffected by quantum correction and magnetic field. It is also found that the maximum gain point shifts towards lower drift velocity regime due to the presence of magnetic field while quantum parameter H shifts this point towards higher drift velocity. Numerical results on the acoustic gain per radian and acoustic gain per unit length are also illustrated. Our results could be useful in understanding acoustic wave propagation in magnetised piezoelectric semiconductor in quantum regime.
Źródło:: Acta Physica Polonica A; 2016, 130, 6; 1401-1405
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 28.

Tytuł:: Structural and Optical Properties of ZnO Nanowires Doped with Magnesium
Autorzy:: Zhuang, H.
Wang, J.
Liu, H.
Li, J.
Xu, P.
Powiązania:: https://bibliotekanauki.pl/articles/1505046.pdf
Data publikacji:: 2011-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.Km
61.72.uj
81.15.Gh
78.67.-n
Opis:: ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850°C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.
Źródło:: Acta Physica Polonica A; 2011, 119, 6; 819-823
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 29.

Tytuł:: Anharmonicity Effects in Nanocrystals Studied by Raman Scattering Spectroscopy
Autorzy:: Dohčević-Mitrović, Z.
Popović, Z.
Šćepanović, M.
Powiązania:: https://bibliotekanauki.pl/articles/1807800.pdf
Data publikacji:: 2009-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 63.22.-m
78.67.Bf
78.30.-j
61.72.uj
Opis:: Phonon-phonon interactions were investigated in various nanocrystalline powders like anatase $TiO_{2-δ}$, pure $CeO_{2-δ}$ and ceria doped with Nd(Gd) analyzing temperature dependent Raman spectra of these systems. Phonon confinement model based on size, inhomogeneous strain and anharmonic effects was used to properly describe the evident changes present in the Raman spectra of pure and doped ceria nanocrystalline samples. In small particles of pure and doped ceria nanocrystals, when size effects have minor impact on Raman modes, four phonon anharmonic processes prevail under the three-phonon ones. When nanopowdered particles are grown enough size effects provoke changes of the anharmonic interactions when three-phonon coupling prevails over the four-phonon anharmonic processes. In nanocrystalline anatase $TiO_2$ evident blueshift of the most prominent $E_g$ Raman mode probably originates from dominant four-phonon anharmonic interactions.
Źródło:: Acta Physica Polonica A; 2009, 116, 1; 36-41
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 30.

Tytuł:: Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy
Autorzy:: Zubiaga, A.
Tuomisto, F.
Zúñiga-Pérez, J.
Muñoz-San José, V.
Powiązania:: https://bibliotekanauki.pl/articles/1811964.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
68.55.Ln
68.37.-d
78.70.Bj
Opis:: We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high $10^{17} cm^{-3}$ to low $10^{17} cm^{-3}$) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about $2×10^{17} cm^{-3}$ in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1257-1264
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 31.

Tytuł:: Near IR Refractive Index for GaInN Heavily Doped with Silicon
Autorzy:: Cywiński, G.
Kudrawiec, R.
Rzodkiewicz, W.
Kryśko, M.
Litwin-Staszewska, E.
Misiewicz, J.
Skierbiszewski, C.
Powiązania:: https://bibliotekanauki.pl/articles/1791356.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
78.66.Fd
81.15.Hi
68.55.-a
78.20.-e
Opis:: The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 936-938
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 32.

Tytuł:: Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals
Autorzy:: Mirowska, A.
Orłowski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1409657.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Ea
81.10.Fq
81.10.-h
81.10.St
72.80.Ey
71.55.Eq
61.72.uj
Opis:: Gallium antimonide (GaSb) single crystals were grown by modified Czochralski method integrated with in situ synthesis in a flowing atmosphere of pure hydrogen. The influence of charge material purity as well as other technological parameters on GaSb crystals quality was investigated. High purity undoped GaSb single crystals were grown with residual acceptors concentration < 1.4 × $10^{17} cm^{-3}$ and high mobility ≈ 690 $cm^2$/Vs (at 300 K). P-type GaSb crystals were doped with silicon (carrier concentration up to 2 × $10^{19} cm^{-3}$) and with zinc (up to 1 × $10^{19} cm^{-3}$). Tellurium doped n-type GaSb single crystals were obtained with concentration up to 2 × $10^{18} cm^{-3}$. Electrical parameters were investigated by the Hall measurements (300 K and 77 K). Temperature dependent Hall measurements (10 ÷ 300 K) were used to compare the quality of undoped GaSb (obtained from Sb of different purity). Dopant concentration was estimated by glow discharge mass spectroscopy analysis. Axial and radial distribution of carrier concentration were investigated especially for Te-doped crystals (low segregation coefficient of Te in GaSb). Great contribution of compensation and self-compensation mechanisms is shown especially for the beginning part of grown crystals and for low Te-doping level. Radial distribution of physical properties for crystals grown in 〈100〉 direction is not axisymmetrical especially for doped GaSb crystals.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1111-1114
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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