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    Wyświetlanie 1-11 z 11
    Tytuł:
    Design of large-scale streamlined head cars of high-speed trains and aerodynamic drag calculation
    Autorzy:
    Wu, Z.
    Yang, E.
    Ding, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/224065.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    high speed train
    NURBS
    aerodynamic drag
    streamlined head car
    numerical simulation
    pociąg ekspresowy
    opór aerodynamiczny
    symulacja numeryczna
    Opis:
    Aerodynamic drag plays an important role in high-speed trains, and how to reduce the aerodynamic drag is one of the most important research subjects related to modern railway systems. This paper investigates a design method for large-scale streamlined head cars of high-speed trains by adopting NURBS theory according to the outer surface characteristics of trains. This method first created the main control lines of the driver cab by inputting control point coordinates; then, auxiliary control lines were added to the main ones. Finally, the reticular region formed by the main control lines and auxiliary ones were filled. The head car was assembled with the driver cab and sightseeing car in a virtual environment. The numerical simulation of train flow field was completed through definition of geometric models, boundary conditions, and space discretization. The calculation results show that the aerodynamic drag of the high-speed train with large-scale streamlined head car decreases by approximately 49.3% within the 50-300 km/h speed range compared with that of the quasi-streamlined high-speed train. This study reveals that the high-speed train with large-scale streamlined head car could achieve the purpose of reducing running aerodynamic drag and saving energy, and aims to provide technical support for the subsequent process design and production control of high-speed train head cars.
    Źródło:
    Archives of Transport; 2017, 44, 4; 89-97
    0866-9546
    2300-8830
    Pojawia się w:
    Archives of Transport
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Projective nonnegative matrix factorization based on α-divergence
    Autorzy:
    Yang, Z.
    Oja, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/91672.pdf
    Data publikacji:
    2011
    Wydawca:
    Społeczna Akademia Nauk w Łodzi. Polskie Towarzystwo Sieci Neuronowych
    Tematy:
    Nonnegative Matrix Factorization
    NMF
    α-divergence
    PNMF
    α-NMF
    α-PNMF
    Opis:
    The well-known Nonnegative Matrix Factorization (NMF) method can be provided with more flexibility by generalizing the non-normalized Kullback-Leibler divergence to α- divergences. However, the resulting α-NMF method can only achieve mediocre sparsity for the factorizing matrices. We have earlier proposed a variant of NMF, called Projective NMF (PNMF) that has been shown to have superior sparsity over standard NMF. Here we propose to incorporate both merits of α-NMF and PNMF. Our α-PNMF method can produce a much sparser factorizing matrix, which is desired in many scenarios. Theoretically, we provide a rigorous convergence proof that the iterative updates of α-PNMF monotonically decrease the α-divergence between the input matrix and its approximate. Empirically, the advantages of α-PNMF are verified in two application scenarios: (1) it is able to learn highly sparse and localized part-based representations of facial images; (2) it outperforms α-NMF and PNMF for clustering in terms of higher purity and smaller entropy.
    Źródło:
    Journal of Artificial Intelligence and Soft Computing Research; 2011, 1, 1; 7-16
    2083-2567
    2449-6499
    Pojawia się w:
    Journal of Artificial Intelligence and Soft Computing Research
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric-Elastic Field Induced by a Straight Dislocation in One-Dimensional Quasicrystals
    Autorzy:
    Yang, L.
    Gao, Y.
    Pan, E.
    Waksmanski, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1202982.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.44.Br
    61.72.Lk
    62.20.D-
    Opis:
    By using the generalized Stroh formalism, the electric-elastic field induced by a straight dislocation parallel to a periodic axis of a one-dimensional quasicrystal is obtained. The derivation is concise and the solution is in an exact closed form. As an illustration, the electric-elastic fields around a straight dislocation in a one-dimensional hexagonal quasicrystal are studied. Besides the interesting numerical results presented, the generalized Stroh formalism can be applied to more complicated dislocation problems in quasicrystals.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 467-470
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells
    Autorzy:
    Mickevičius, J.
    Tamulaitis, G.
    Kuokštis, E.
    Shur, M.
    Yang, J.
    Gaska, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811960.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.De
    Opis:
    Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1247-1252
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cloning, purification and enzymatic characterization of recombinant human superoxide dismutase 1 (hSOD1) expressed in Escherichia coli
    Autorzy:
    Lin, Feng
    Yan, Dandan
    Chen, Yawen
    E, Fletcher
    Shi, Haifeng
    Han, Bangxing
    Zhou, Yang
    Powiązania:
    https://bibliotekanauki.pl/articles/1038395.pdf
    Data publikacji:
    2018
    Wydawca:
    Polskie Towarzystwo Biochemiczne
    Tematy:
    superoxide dismutase 1
    Escherichia coli
    soluble expression
    metal ions
    catalytic activity
    Opis:
    Superoxide dismutase 1 (SOD1) is a metalloenzyme that catalyzes the disproportionation of superoxide into molecular oxygen and hydrogen peroxide. In this study, the human SOD1 (hSOD1) gene was cloned, expressed and purified. The hSOD1 gene was amplified from a pool of Bxpc3 cell cDNAs by PCR and cloned into expression vector pET-28a (+). The recombinant soluble hSOD1 was expressed in E. coli BL21 (DE3) at 37°C and purified using nickel column affinity chromatography. Soluble hSOD1 was produced with a yield of 5.9 μg/mL medium. As metal ions can have a certain influence on protein structure and activity, we researched the influences of different concentrations of Cu2+ and Zn2+ on hSOD1 activity at induction and the time of activity detection. The results implied that Cu2+ and Zn2+ do not enhance SOD1 expression and solubility; they can, however, improve the catalytic activity at induction. Meanwhile, Cu2+ and Zn2+ also enhanced the enzyme activity at the time of detection. Furthermore, most other bivalent cations had the potential to replace Zn2+ and Cu2+, and also improved enzyme activity at the time of detection.
    Źródło:
    Acta Biochimica Polonica; 2018, 65, 2; 235-240
    0001-527X
    Pojawia się w:
    Acta Biochimica Polonica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quest for Band Renormalization and Self-Energy in Correlated f-Electron Systems
    Autorzy:
    Durakiewicz, T.
    Riseborough, P.
    Batista, C.
    Yang, Y.
    Oppeneer, P.
    Joyce, J.
    Bauer, E.
    Graham, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538778.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.28.+d
    74.25.Jb
    Opis:
    Coexisting low-energy scales are observed in f-electron materials. The information about some of low-energy scales is imprinted in the electron self-energy, which can be measured by angle-resolved photoemission (ARPES). Such measurements in d-electron materials over the last decade were based on high energy- and momentum- resolution ARPES techniques used to extract the self-energy information from measured spectra. Simultaneously, many-body theoretical approaches have been developed to find a link between the self-energy and many-body interactions. Here we show the transcription of such methods from d-electrons to f-electrons by presenting the first example of low energy scales in the f-electron material $USb_2$, measured with synchrotron-based ARPES. The proposed approach will help in answering the fundamental questions about the complex nature of the heavy fermion state.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 264-267
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Optical and Photoelectrical Properties of ZnO Crystals
    Autorzy:
    Onufrijevs, P.
    Serevičius, T.
    Scajev, P.
    Manolis, G.
    Medvids, A.
    Chernyak, L.
    Kuokstis, E.
    Yang, C.
    Jarasiunas, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506285.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.15.+e
    78.45.+h
    78.30.Fs
    Opis:
    We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 274-276
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Silicon Photonic Waveguides for Near- and Mid-Infrared Regions
    Autorzy:
    Stankovic, S.
    Milosevic, M.
    Timotijevic, B.
    Yang, P. Y.
    Teo, E. J.
    Crnjanski, J.
    Matavulj, P.
    Mashanovich, G. Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047873.pdf
    Data publikacji:
    2007-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.82.-m
    42.82.Et
    Opis:
    The basic building block of every photonic circuit is a waveguide. In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator rib waveguide. We also analyse two structures that can find applications in mid- and long-wave infrared regions: free-standing and hollow core omnidirectional waveguides.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 5; 1019-1024
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
    Autorzy:
    Juršėnas, S.
    Kuokštis, E.
    Miasojedovas, S.
    Kurilčik, G.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038100.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 567-573
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterized Microstructure and Electrical Properties of Hydrogenated Nanocrystalline Silicon Films by Raman and Electrical Conductivity Spectra
    Autorzy:
    Xiao-Yong, Gao
    Jian-Tao, Zhao
    Yu-Fen, Liu
    Qing-Geng, Lin
    Yong-Sheng, Chen
    Jin-Hua, Gu
    Shi-E, Yang
    Jing-Xiao, Lu
    Powiązania:
    https://bibliotekanauki.pl/articles/1808127.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.23.Cq
    73.61.-r
    Opis:
    Microstructure and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) film deposited on glass substrate at low temperature were characterized by average grain size, crystallinity, and dark electrical conductivity data obtained from the Raman and electrical conductivity spectroscopy, respectively. The average grain size, crystallinity and electrical conductivity have a similar change with substrate temperature. A threshold substrate temperature determined by silane concentration appears in their corresponding spectroscopy vs. substrate temperature. The dependence of crystallinity, average grain size and electrical conductivity on substrate temperature were accounted for by surface diffusion model and heterojunction quantum dot model, respectively.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 738-741
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
    Autorzy:
    Juršėnas, S.
    Miasojedovas, S.
    Kurilčik, G.
    Liuolia, V.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Kuokštis, E.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041736.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 235-239
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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