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Wyświetlanie 1-15 z 48
Tytuł:
Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP
Autorzy:
Babiński, A.
Wysmołek, A.
Słupiński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929708.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
Opis:
The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 673-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1924252.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 908-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Metastable EL2 under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1931913.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 137-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Strong Photoluminescence Fluctuations in Laser-Thinned Few-Layer WS₂
Autorzy:
Bala, Ł.
Łacińska, E.
Nogajewski, K.
Molas, M.
Wysmołek, A.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398573.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
71.35.-y
78.55.-m
78.30.-j
Opis:
We present results of μ-Raman and μ-photoluminescence study of few-layer WS₂ flakes that have been locally thinned down by a focused laser beam. The Raman spectroscopy measurements prove that the investigated flake was locally thinned down to a monolayer. Interestingly, μ-photoluminescence experiments allowed us to observe huge intensity fluctuations at the boundary of laser-thinned region. Similar effects were found at the edges of a WS₂ bilayer flake, which has not been subjected to laser-thinning. The origin of the observed time evolution of the photoluminescence response is discussed in terms of potential fluctuations resulting from light-induced changes of the charge state of defects.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1176-1178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption and Emission Properties of Light Emitting Diode Structures Containing GaInN/GaN QWs
Autorzy:
Binder, J.
Korona, K.
Borysiuk, J.
Wysmołek, A.
Baeumler, M.
Köhler, K.
Kirste, L.
Powiązania:
https://bibliotekanauki.pl/articles/1492933.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
72.40.+w
73.61.Ey
Opis:
In this work we present measurements of GaInN/GaN light emitting diodes (LEDs) with an active layer consisting of three quantum wells made of $Ga_{0.9}In_{0.10}N$ that have different widths (1.8 nm, 2.7 nm, 3.7 nm). A comparison of emission and absorption (photocurrent) on the same sample revealed a shift in energy, with the emission energy being significantly lower. The shifts are about 0.02 eV, 0.03 eV, and 0.04 eV for the quantum wells having the widths of 1.8 nm, 2.7 nm, and 3.7 nm, respectively. This can be explained by a shift of the ground state energy caused by the quantum confined Stark effect. Calculations show that due to the spontaneous polarization and the piezoelectric effect a strong electric field of the order of 1 MV/cm was present in the GaInN quantum wells. Simulations of ground-state energies in the model of an infinite square well under the influence of an electric field with a matched effective well width were performed and used to interpret the experimental results.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 918-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper
Autorzy:
Binder, J.
Stępniewski, R.
Strupiński, W.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033795.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Pq
78.67.Wj
73.30.+y
Opis:
We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 360-363
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
Autorzy:
Borysiuk, J.
Wysmołek, A.
Bożek, R.
Strupiński, W.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811916.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Lp
78.55.-m
61.72.Nn
68.65.Fg
61.72.up
Opis:
Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1067-1072
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Korona, K. P.
Stępniewski, R.
Knap, W.
Pakuła, K.
Baranowski, J. M.
Grandjean, N.
Massies, J.
Prystawko, P.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2036024.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.-r
73.21.-b
74.40.+k
Opis:
Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 573-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and optical properties of boron nitride grown by MOVPE
Autorzy:
Dąbrowska, A.
Pakuła, K.
Bożek, R.
Rousset, J.
Ziółkowska, D.
Gołasa, K.
Korona, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1160531.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.30.Fs
78.20.-e
Opis:
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaN Synthesis by Ammonothermal Method
Autorzy:
Dwiliński, R.
Wysmołek, A.
Baranowski, J.
Kamińska, M.
Doradziński, R.
Garczyński, J.
Sierzputowski, L.
Jacobs, H.
Powiązania:
https://bibliotekanauki.pl/articles/1933907.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Dn
Opis:
It is shown that ammonothermal method can be successfully used to synthesize GaN powder of good crystallographic quality from ammonia solution at high pressure and a moderate temperature. The size of obtained GaN powder grains was of a few micrometers. The improvement of the powder crystalline quality (examined by X-ray rocking curve, scanning electron microscopy and luminescence measurements) with increasing molar proportion of mineralizer was observed. It was therefore possible to conclude that high molar proportion of mineralizer in ammonia solution plays a crucial role in the polycrystal growth process. Visible luminescence of high efficiency from the GaN powder was found.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 833-836
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
Autorzy:
Dwiliński, R.
Palczewska, M.
Kaczor, P.
Korona, K.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920972.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.50.Ge
76.30.Mi
Opis:
The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 613-616
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron Transition in Homoepitaxial GaN Layers
Autorzy:
Fiorek, A.
Baranowski, J. M.
Wysmołek, A.
Pakuła, K.
Wojdak, M.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968067.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 742-744
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Molybdenum Disulfide $(MoS_2)$
Autorzy:
Gołasa, K.
Grzeszczyk, M.
Korona, K.
Bożek, R.
Binder, J.
Szczytko, J.
Wysmołek, A.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399110.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.22.-m
71.35.-y
78.20.-e
78.30.-j
Opis:
Research of a monolayer and a bulk $MoS_2$ is reported. The room temperature Raman spectra of the natural $MoS_2$ crystals for the both resonant (632.8 nm) and the non-resonant (532 nm) excitation are presented. The apparent differences observed in the spectra from the bulk and the one monolayer $MoS_2$ are discussed. In particular, the feature due to a first order scattering involving the LA(M) phonon in the resonance Raman spectrum of the one monolayer $MoS_2$ was observed and explained in terms of the disorder in the natural crystal. The disorder is also documented by the line-shape of the room-temperature photoluminescence spectra observed from both the bulk and the one monolayer $MoS_2$.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 849-851
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman spectroscopy of shear modes in a few-layer MoS₂
Autorzy:
Gołasa, K.
Grzeszczyk, M.
Zinkiewicz, M.
Nogajewski, K.
Potemski, M.
Wysmołek, A.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1160654.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
87.64.Je
63.20.Kr
Opis:
We study low frequency vibrational modes in atomically thin molybdenum disulfide (MoS₂) by means of the Raman scattering spectroscopy. A shear mode related to rigid interlayer vibrations is identified. Its energy evolution with the increasing number of layers is well described using a linear chain model with only nearest neighbor interactions. The resulting force constant (Kₓ = 2.7 × 10¹⁹ N/m³) corresponds well to the previously published data.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-132-A-134
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 48

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