Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP

The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.